TW558843B - Production method for semiconductor wafer and III group nitride compound semiconductor device - Google Patents
Production method for semiconductor wafer and III group nitride compound semiconductor device Download PDFInfo
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- TW558843B TW558843B TW91106173A TW91106173A TW558843B TW 558843 B TW558843 B TW 558843B TW 91106173 A TW91106173 A TW 91106173A TW 91106173 A TW91106173 A TW 91106173A TW 558843 B TW558843 B TW 558843B
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2001099123A JP4749583B2 (ja) | 2001-03-30 | 2001-03-30 | 半導体基板の製造方法 |
Publications (1)
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TW558843B true TW558843B (en) | 2003-10-21 |
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TW91106173A TW558843B (en) | 2001-03-30 | 2002-03-28 | Production method for semiconductor wafer and III group nitride compound semiconductor device |
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JP (1) | JP4749583B2 (ja) |
TW (1) | TW558843B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8043977B2 (en) | 2005-08-08 | 2011-10-25 | Showa Denko K.K. | Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate |
TWI550144B (zh) * | 2014-02-20 | 2016-09-21 | 紐富來科技股份有限公司 | 氣相成長裝置 |
TWI843227B (zh) * | 2021-10-14 | 2024-05-21 | 美商應用材料股份有限公司 | 用於GaN生長的半導體處理方法與半導體結構 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4824920B2 (ja) * | 2003-10-20 | 2011-11-30 | パナソニック株式会社 | Iii族元素窒化物結晶半導体デバイス |
JP4904726B2 (ja) * | 2005-06-16 | 2012-03-28 | 日立電線株式会社 | 半導体エピタキシャルウェハ及びhemt用半導体エピタキシャルウェハの製造方法 |
KR100969812B1 (ko) * | 2007-12-12 | 2010-07-13 | 주식회사 실트론 | 자가 분리를 이용한 질화갈륨 단결정 기판의 제조 방법 |
WO2012020565A1 (ja) * | 2010-08-11 | 2012-02-16 | 住友化学株式会社 | 半導体基板、半導体デバイスおよび半導体基板の製造方法 |
FR2977260B1 (fr) * | 2011-06-30 | 2013-07-19 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede |
JP5228122B1 (ja) | 2012-03-08 | 2013-07-03 | 株式会社東芝 | 窒化物半導体素子及び窒化物半導体ウェーハ |
US10204778B2 (en) * | 2016-12-28 | 2019-02-12 | QROMIS, Inc. | Method and system for vertical power devices |
KR102301861B1 (ko) * | 2019-02-28 | 2021-09-14 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치 |
KR102227213B1 (ko) * | 2019-04-19 | 2021-03-12 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 |
KR102315908B1 (ko) * | 2019-03-25 | 2021-10-21 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치 |
WO2020175971A1 (ko) * | 2019-02-28 | 2020-09-03 | 안상정 | 고순도 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 |
KR102480141B1 (ko) * | 2020-09-04 | 2022-12-22 | 웨이브로드 주식회사 | 압전 박막을 제조하는 방법 및 이 박막을 이용하는 소자 |
KR20210005989A (ko) * | 2021-01-08 | 2021-01-15 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07267796A (ja) * | 1994-03-31 | 1995-10-17 | Mitsubishi Cable Ind Ltd | GaN単結晶の製造方法 |
JP3349316B2 (ja) * | 1995-12-05 | 2002-11-25 | 古河電気工業株式会社 | エピタキシャル成長方法 |
JP3712770B2 (ja) * | 1996-01-19 | 2005-11-02 | 豊田合成株式会社 | 3族窒化物半導体の製造方法及び半導体素子 |
JP4298023B2 (ja) * | 1998-10-28 | 2009-07-15 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 窒化物半導体多層堆積基板および窒化物半導体多層堆積基板の形成方法 |
JP2000277441A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 半導体構造とそれを備えた半導体素子及び結晶成長方法 |
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2001
- 2001-03-30 JP JP2001099123A patent/JP4749583B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-28 TW TW91106173A patent/TW558843B/zh not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8043977B2 (en) | 2005-08-08 | 2011-10-25 | Showa Denko K.K. | Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate |
US8222674B2 (en) | 2005-08-08 | 2012-07-17 | Showa Denko K.K. | Semiconductor device having a group-III nitride superlattice layer on a silicon substrate |
TWI550144B (zh) * | 2014-02-20 | 2016-09-21 | 紐富來科技股份有限公司 | 氣相成長裝置 |
TWI843227B (zh) * | 2021-10-14 | 2024-05-21 | 美商應用材料股份有限公司 | 用於GaN生長的半導體處理方法與半導體結構 |
Also Published As
Publication number | Publication date |
---|---|
JP2002299253A (ja) | 2002-10-11 |
JP4749583B2 (ja) | 2011-08-17 |
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