TW544827B - Laminated film for COF and film carrier tape for COF - Google Patents

Abstract

To provide a laminated film for COF which is free from problems in, for example, peel strength and antimigration and which enables reliable registration of an IC chip or a printed board to be mounted; and a film carrier tape for COF. A laminated film for COF has a structure including a conductor 11 and an insulating layer 12 laminated one on the other. The insulating layer 12 has a percent light transmittance of at least 50% at a region corresponding to an etched region of the conductor 11.

Description

544827544827

技術領 本發明係關於用於組裝1 C或LS I等電子元件之薄膜輸送 贡之COF用層合薄膜及C〇F薄膜輸送帶。 技術Technical Field The present invention relates to film conveyance for assembling electronic components such as 1 C or LS I. Laminated films for COF and COF film conveyor belts. technology

隨著電子產業的發達’用於1C(積體電路）、LSI(大型積 収電路）等之電子兀件之組裝的印刷線路板的需要急速地 増加，而電子器材的小型化、輕量化、高機能化之要求 下，作為此等電子兀件的組裝方法，最近係採用著使用 膠帶、τ — BGA膠帶、ASIC膠帶等之電子元件組裝用薄膜 ，送帶來進行組裝之方式。尤其是，個人電腦、行動電話 寺^類的使用須要求高精密化、薄型化、液晶晝面的邊框 面私狹小化之液晶顯示元件（L C D)的電子產業中，其重要 性日益增高。 八 八 又，作為於更小的空間中進行更高密度的組裝之組裝方 '’用以將裸1C晶片直接搭載於薄膜輸送帶上的COF( chip on f 1 1 m :以薄膜搭載晶片）法業已實用化。 =用於COF之薄膜輪送帶，由於未具備元件孔，故係使With the development of the electronics industry, the demand for printed circuit boards used for the assembly of electronic components such as 1C (Integrated Circuit) and LSI (Large Collector Circuit) has increased rapidly, and the miniaturization, weight, Under the request of high performance, as a method of assembling these electronic components, recently, a film for assembling electronic components using tape, τ-BGA tape, ASIC tape, etc. has been used to assemble it. In particular, the use of personal computers, mobile phones, and other devices requires the use of liquid crystal display elements (LCDs) that require high precision, thinness, and bezels on the LCD surface. The LCD industry has become increasingly important. 1988, as an assembly method for higher density assembly in a smaller space `` COF (chip on f 1 1 m: chip on f 1 1) for mounting bare 1C wafers directly on film conveyor belts '' The legal industry has been put into practical use. = Film feed belt for COF, because it does not have component holes, so

由導體與絕緣層經預先積層所成之層合薄膜，用以決定 之圖案只形成於導體上，故於直接搭載於IC晶片的線 °木上日$的位置對準，係透過絕緣層經由決定位置之圖 案而進行。 作為=於此等C0F薄膜輸送帶之銅箔層合薄膜，係於聚 ^ f月安薄膜等之絕緣薄膜上濺鍍鎳等之密合強化層後再施 以鋼鍍敷之層合薄膜。於此等銅鍍敷層合薄膜，由於聚醯The laminated film formed by pre-stacking the conductor and the insulating layer is used to determine that the pattern is formed only on the conductor, so it is aligned with the position of the line on the line directly mounted on the IC chip. It is passed through the insulating layer. The position pattern is determined. As the copper foil laminate film of these COF film conveyor belts, it is a laminated film of steel plating after the adhesion strengthening layer of nickel or the like is sputtered on an insulating film such as a polystyrene film. These copper-plated laminated films are

544827 五、發明說明⑵ ___ 亞胺薄膜比較透明，故於搭載IC時的位 然而鋼笛的剝離強度低，耐移行性 為容易 一 ^ 1，又有上述問題的層合薄膜有··在鋼^以 行聚醯亞胺薄膜之積層的casting type、^ 主佈法進 J熱塑性樹脂.熱硬化性樹脂等 上中介 成之熱壓合型的層合薄膜。 寻膜以熱壓合所作 潑J所欲解決之 然而，於castlng type.埶壓合 經蝕刻除去之區域的绍 之層&潯膜，與鋼箔 射，致會有透過絕緣層無法之表面會使光散 因而，為了確實進行 二準81木的問題存在。 後，須對應於位置对準用圖案，'經由=笛的圖案姓刻 增高，是為問題。所必要的孔須施行後加工，致使成本 本發明，有鑑於此等情況， 膜及COF薄膜輸送帶，复仫此认立丨、、—種COF用層合薄 面之問題，於1C晶片或印 強度及耐移行性等方 對準位置者。 p刷基板寺之組裝時可良好地進行 度以解決課題之手f 用以解決上述課題之本發明的 合薄膜’其係由導體層盥p逆 心樣，係一種COF用層 在於，上述導體層經蝕刻的區域之、二^構坆者，其特徵 為5 0 %以上。 述·纟巴緣層的光透過率 此第1怨樣中，由於絕緣 本層的先透過率為50%以上，故可544827 V. Description of the invention ⑵ ___ The imine film is relatively transparent, so when it is mounted on the IC, the peeling strength of the steel flute is low, and the migration resistance is easy. ^ 1, and the laminated film that has the above problems is ... ^ Casting type of laminated polyimide film, ^ Main cloth method into J thermoplastic resin, thermosetting resin and other thermocompression type laminated film interposed. The film is hot-laminated to make the splash J. However, in the castlng type. 埶 The layer of the Shao's layer & 浔 film which is etched away is laminated with the steel foil, so that there is a surface that cannot pass through the insulating layer. The light is scattered. Therefore, there is a problem in order to perform the two-dimensional 81 wood. Later, it must correspond to the pattern for position alignment, and the pattern name of 'via = flute is engraved to increase, which is a problem. The necessary holes must be post-processed, resulting in the cost of the present invention. In view of these circumstances, the film and COF film conveyor belts have been reconfirmed. The problems of laminating thin surfaces for COF, such as 1C wafers or printing Alignment of strength and resistance to migration. The process of assembling p brush substrates can be performed well to solve the problem. f The composite film of the present invention used to solve the above problems is composed of a conductor layer and a concentric core layer. It is a layer for COF. The structure of the etched area of the layer is more than 50%. The light transmittance of the edge layer is the first complaint because the first transmittance of the insulating layer is 50% or more, so

I Λ 第6頁 \\326\2d-\91 -08\91 113356.ptd 544827 五、發明說明（3) 良好地施行I C晶片等組裝時之位置對準。 本發明之第2態樣，為於第1態樣之COF用層合薄膜中之 上述導體層為銅箔，該導體層與上述絕緣層相接的面之表 面粗度Rz為0.1〜1.8 //m。 於4匕第2態樣中，由於銅箔的表面粗度在設定的範圍 内，故形成於其上之絕緣層的光透過率可作成5 0 %以上。 本發明之第3態樣，為第1態樣之COF用層合薄膜中之上 述絕緣層，係經由以聚醯亞胺前驅體樹脂溶液塗佈之後， 施行摩乞燥·硬化而形成者。 此第3態樣，係具有由聚醯亞胺所構成之絕緣層之層合 薄膜。 本發明之第4態樣，為第2態樣之COF用層合薄膜中之上 述絕、緣層，係經由以聚醯亞胺前驅體樹脂溶液塗佈之後， 施行萆乞燥·硬化而形成者。 此第4態樣，係具有由聚醯亞胺所構成之絕緣層之層合 薄膜。 本發明之第5態樣，為第1態樣之COF用層合薄膜中之上 述絕緣層，係由熱壓合於上述導體層上之熱塑性樹脂層及 絕緣薄膜所形成者。 此第5態樣，係於導體上形成由熱塑性樹脂層及絕緣薄 膜所成之絕緣層。 本發明之第6態樣，為第2態樣之COF用層合薄膜中之上 述絕緣層，係由熱壓合於上述導體層上之熱塑性樹脂層及 絕緣薄膜所形成者。I Λ page 6 \\ 326 \ 2d- \ 91 -08 \ 91 113356.ptd 544827 V. Description of the invention (3) Perform the alignment of IC chips and other components during assembly. According to a second aspect of the present invention, the conductive layer in the laminated film for COF according to the first aspect is a copper foil, and a surface roughness Rz of a surface where the conductive layer is in contact with the insulating layer is 0.1 to 1.8 / / m. In the second aspect of the 4-dagger, since the surface roughness of the copper foil is within a set range, the light transmittance of the insulating layer formed thereon can be made 50% or more. A third aspect of the present invention is the above-mentioned insulating layer in the laminated film for COF of the first aspect, which is formed by applying molybdenum curing and hardening after coating with a polyimide precursor resin solution. This third aspect is a laminated film having an insulating layer made of polyimide. The fourth aspect of the present invention is the above-mentioned insulating layer in the laminated film for COF according to the second aspect, which is formed by applying a polyimide precursor resin solution and then performing drying and hardening. By. This fourth aspect is a laminated film having an insulating layer composed of polyimide. A fifth aspect of the present invention is the above-mentioned insulating layer in the laminated film for COF according to the first aspect, which is formed of a thermoplastic resin layer and an insulating film thermally laminated on the conductor layer. In the fifth aspect, an insulating layer made of a thermoplastic resin layer and an insulating film is formed on a conductor. A sixth aspect of the present invention is the above-mentioned insulating layer in the laminated film for COF according to the second aspect, which is formed of a thermoplastic resin layer and an insulating film thermally laminated on the conductor layer.

91113356.ptd 第7頁 544827 五、發明言兒明（4) ^ ^ ^ i ^ ^ ^ ^ ^ ^ ^ ^ λ ^ ,4 述i:dn樣，為第1態樣之c〇f用層合薄膜中之上 及絕緣薄膜所形成者。 ”、、更化"“曰層 舊ΐ ϊ?'樣’係於導體上形成由熱硬化性樹脂層及絕缘 溥膜所成之絕緣層。 巴、味 述ίϊ:月之r態樣’為第2態樣之C0F用層合薄膜中之上 这，·，κ層，係由熱壓合於上述導體層上91113356.ptd Page 7 544827 V. Inventor's Note (4) ^ ^ ^ i ^ ^ ^ ^ ^ ^ ^ ^ λ ^ ^ 4 The i: dn-like, which is the first aspect of cof, is laminated. Formed on and above the insulating film. ", Genghua "" Layer layer old ΐ? "Like" is formed on the conductor to form an insulating layer made of a thermosetting resin layer and an insulating film. Bar, taste and description ϊ: The r-shaped aspect of the moon is the second aspect of the laminated film for COF. This, ·, κ layer is thermocompression bonded to the above conductive layer

及絕緣薄膜所形成者。 吏化性祕脂層 此第8態樣，係於導體上形成由熱硬化性 薄膜所成之絕緣層。 曰及、吧緣 本發明之第9態樣，為一種COF薄膜輸送帶，其特徵在 於，係使用第1至8態樣中之任一者之COF用層合薄^。 此第9態樣，無剝離強度及耐移行性等方面之問題，為 可實現於I C晶片或印刷基板等之組裝時可良好地進行對'準 位置之COF薄膜輸送帶。And formed by insulating film. Lithographic lipid layer This eighth aspect forms an insulating layer made of a thermosetting film on a conductor. The ninth aspect of the present invention is a COF film conveyor belt, which is characterized by using a thin layer for COF using any of the first to eighth aspects ^. In this ninth aspect, there are no problems such as peel strength and resistance to migration, and it is possible to achieve a good alignment of the COF film conveyor belt at the quasi-position when assembling IC wafers or printed boards.

本發明中，由於絕緣層的光透過率為5 0 %以上，故於I c 晶片的組裝時之位置對準可良好地進行，而以55%以上更 佳，尤以7 0 %以上為特佳。理由在於可更加精準地對準位 置。 此處，光透過率，係以吸光光度計測定者。亦即，將導 體層經蝕刻之絕緣層裁切成適當的尺寸，於光度計中以對 光源為垂直之方式設定而進行測定。In the present invention, since the light transmittance of the insulating layer is 50% or more, the position alignment during the assembly of the IC chip can be performed well, and more preferably 55% or more, especially 70% or more. good. The reason is that the position can be aligned more precisely. Here, the light transmittance is measured by an absorbance photometer. That is, the etched insulating layer of the conductor layer is cut to an appropriate size, and measured in a photometer by setting the light source to be perpendicular to the light source.

91113356.ptd 第8頁91113356.ptd Page 8

544827 五、發明說明（5) =此光透過率，只要是在IC晶片等之 ，理時所使用的波長的區域下即可，通常係使用可 域，例如波長為4 0 0〜80〇nm程度的區域。铁而， 為由例如聚醯亞胺等之具有雔鍵的材“技 ^ " π 士认—c λ λ 、 ’又鍵的材抖所構成之薄膜的情 6 0 0 7 0 0、 nm以：有大的吸收’故通常使用以 處理故在此犯圍中的光透過率會有問題。 為了作成如此之光透過率的絕緣居 的表面粗度Rz宜為〇 w 8〃 Γ 體層之絕緣層側 又U且钩υ· 1 1. 8 /zm，尤以〇· 又，表面粗度Rz，係「10點平均粗度 1 1 °544827 V. Description of the invention (5) = This light transmittance is only required in the area of the wavelength used by the IC chip, etc., and usually the useable region, for example, the wavelength is 4 0 ~ 80 0 nm The extent of the area. Iron, is a thin film made of a material having a 雔 bond such as polyimide, etc. π 认 —c λ λ, ′ a bond material shake 6 0 0 7 0 0, nm In order to have a large absorption, it is usually used to deal with the light transmittance in this case. There is a problem. In order to make such a light transmittance, the surface roughness Rz of the insulating layer should be 0w 8〃 Γ The side of the insulation layer is U · 1 1. 8 / zm, especially 0 ·. The surface roughness Rz is "10 points average thickness 1 1 °

0 6 0 1而測定。 係依據JIS B 發明之實施报態0 6 0 1 and measured. Status of implementation according to JIS B inventions

薄二：逆：ΐ :二實施形態中’就C〇F用層合薄膜及COF /寻膜顆k T依據貫施例加以說明。 ⑽圖用 =形；：：用層合薄膜。如圖1所示般， 胺薄膜所V成二二銅 上…佈法而：成 處導體η 上。又’光透過率為5。％以上的波長並：25〇“乂 是於1C搭載時之影像處理所 、艮疋，只要 上即可，是不言而喻的。 《先源的波長下為5〇%以 本發明所謂之光透過率，係指自 蝕刻將導體11除去之區域的光透 θ δ薄膜10對經 午猎由具有這樣的光Thin second: Reverse: ΐ: In the second embodiment, the laminated film for COF and COF / finding film kT will be described according to the embodiment. ⑽ 图 Use = shape; :: Use laminated film. As shown in Fig. 1, the amine thin film V is formed on the copper ... cloth method: on the conductor η. The light transmittance is 5. Wavelengths above%: 25 ° "is the image processing station and the base when the 1C is mounted, as long as it is up, it is self-evident." The wavelength of the source is 50%. The light transmittance refers to the light transmission of the area where the conductor 11 has been removed by etching. The θ δ film 10 has such light

544827 五、發明說明（6) 透過率，使得於1C晶片搭载時的位置 此處’作為導體11 ’可使用鋼或其他心為 '易。 箔為通常使用者。又，作為鋼g，電-艮寺’而銅 任一種皆可使用，惟以使用表面粗度Rz 、軋製鋼箱等 置於絕緣層1 2側為佳。其理由為，在盆”'、·〜1 · 8 “ m者設 將導體11除去時的絕緣層丨2的光读:^形成絕緣層1 2， 導體U的厚度，通常宜為i^透過率可成為50%以上。 且句1 而以^ 另一方面’作為絕緣層12，可使用聚醯亞胺之：為佳。 使用聚醋、聚醯胺、聚喊〈碼〉、液晶聚合物；：以：： 具有聯苯骨架之全芳香族聚酿亞胺為佳。又 二用 厚度’通常宜為12.5〜75…而以iu〜50/zm為佳：12的 此COF用I合溥膜10，#圖2所示般，係於經表面處理使 表面粗度Rz成為0· ：1〜1· 8 之銅箔所構成的導體n上，以 含有聚醯亞胺前驅體及清漆之聚醯亞胺前驅體樹脂溶液塗 佈，形成塗佈層1 2a，使溶劑乾燥後，將其捲繞。然後， 於通有氧氣之烘烤爐内進行熱處理，施行醯亞胺化作成絕 緣層1 2。 圖3係顯示使用COF用層合薄膜1〇製造之c〇F薄膜輸送帶 20 ° 如圖3(a)、（b)所示般，本實施形態2C〇f薄膜輸送帶 20，係用COF用層合薄膜1〇所製造者，具有將導體11圖案 化之線路圖案2 1、與設置於線路圖案2 1的寬的方向之兩側 的扣鏈齒輪孔22。又，線路圖案21 ，係分別大致對應於要 組裝之電子元件的尺寸，連續地設置於絕緣層1 2的表面。544827 V. Description of the invention (6) The transmittance makes the position when the 1C chip is mounted. Here, as the conductor 11, steel or other cores can be used easily. The foil is for ordinary users. In addition, as the steel g, either electro-gen 'or copper can be used, but it is preferable to use the surface roughness Rz, a rolled steel box, and the like on the insulating layer 12 side. The reason is that in the case of "", · ~ 1 · 8 "m, the optical reading of the insulating layer 丨 2 when the conductor 11 is removed: ^ forms the insulating layer 12, and the thickness of the conductor U is generally suitable for transmission. The rate can be over 50%. And sentence 1 and ^ on the other hand as the insulating layer 12, polyimide can be used: preferably. Use of polyacetate, polyamine, poly-code, liquid crystal polymer; ::: Fully aromatic polyimide with biphenyl skeleton is preferred. The other thickness is usually 12.5 ~ 75 ... and iu ~ 50 / zm is preferred: 12 of this COF is made of I-coated film 10, # As shown in Figure 2, it is surface roughness Rz after surface treatment. The conductor n made of copper foil of 0: 1: 1 to 1.8 is coated with a polyimide precursor resin solution containing a polyimide precursor and a varnish to form a coating layer 12a and a solvent. After drying, it is wound up. Then, it is heat-treated in a baking furnace in which oxygen is passed, and then sulfonimide is formed to form an insulating layer 12. Fig. 3 shows a COF film conveyor belt 20 manufactured by using a laminated film 10 for COF. As shown in Figs. 3 (a) and 3 (b), the COF film conveyor belt 20 of this embodiment 2 uses COF. The laminate film 10 has a line pattern 21 in which the conductor 11 is patterned, and sprocket gear holes 22 provided on both sides of the line pattern 21 in the wide direction. The circuit patterns 21 are provided on the surface of the insulating layer 12 continuously, each of which corresponds approximately to the size of an electronic component to be assembled.

544827 五、發明說明（7) 再者，於線路圖案21上，具有由焊料光阻（sol de: 否 / w球格圆杀乙1上，具有田 &gt;十τρτ 广且〈so i der i s t)材料塗佈溶液以網版印刷塗佈所形成之焊料光阻 3 ° 移 res 層23 如此作法製造之C0F薄膜輸送帶，可用於例如，—遭移 送之下用以進行I C晶片及印刷線路板等的電子元件的組裝 製程中，可進行C0F組裝，惟，此時由於絕緣層丨2的光透$ 過率為50%以上，故可自絕緣層12側以CCD等對線路圖 進打影像辨識，經由影像處理可良好地進行相互位= 準，而可尚精度地進行電子元件之組裝。 、、 接著’就上述之C0F薄膜輸送帶的製造方法一 加以說明。 咬令賊圖4 如f 4U?所示般，備妥⑽用層合薄膜1〇，再 所不般，藉由鑽孔等，將導 圖4 (b) 鏈齒輪孔22。此扣鏈齒輪孔；;# 貫通’形成扣 形成，亦可自絕緣層12的真 自、f層12的表面上來 示般，使用通常之微影術m然後，如圖4㈦所 2 1的區域以負型光阻材料二孤 11上形成線路圖案 料塗佈層30。當然，使用j 2洛液進行塗佈，形成光阻材 位插梢***扣鏈齒輪孔22 '光阻材料亦可。又，於將定 後，經由透過光罩3丨進行暖二進仃絕緣層1 2的位置對準之 3〇圖案化，形成如圖4(d)=光·顯影，使光阻材料塗佈層 3 2。然後，以線路圖案用不般的線路圖案用光阻圖案 體11以蝕刻液溶解除去，再，圖案32作為遮罩圖案，將導 以驗性溶液等溶解去除 、、、二由將線路圖案用光阻圖案3 2 ,、，如圖4(e)所示般地形成線路圖案 91】13356.ptd 苐1〗頁 544827 五、發明說明（8) ，用網版印刷法，形 21。接著，如圖4(f)所示般地，例如 成焊料光阻層2 3。 (貫施例1) 經由塗佈法形成厚度 於作為導體11的超低杈度 40 # m的聚醯亞胺層作Λ p 上，政田罡怖忒爪w /子々 « ^ ^ \乍為硙緣層Μ ,作為實施例丄的⑶？用 層合潯Μ。超低粗度銅箔戸命 /白尽度為9 //m，表面粗度Rz為1· 2 // m 〇 此處，表面粗度Rz，係脾钿 .、，j * 你將銅咱裁切成10cm X l〇cm大 小，以接觸式表面粗度測定機（小坂研究所 之Surfcoder SE-30H)則仝 、、日ι ^ 、夂。測疋日守係使用曲率半徑2 μ m 的楝針，以〇 · 8 m m為測定具疮，从λ μ十 長度 縱倍率5 0 〇 〇倍，橫倍率2 0 0 倍，以掃描速度〇 · 1 mm/秒作測定。 對此C0F用層合薄膜的導驊！ ！ a &gt;门+ ]¥體1 1施仃圖案化，對經圖案化 的區域的絕緣層1 2之光透過率（、、古| β / 心巧午、渡長6 0 0 nm)加以測定之結 果，付7 (U。此結果，示如表1及圖5。 此處，光透過率，係以吸光光度計（日， U-33 0 0 )作測定。測定波長定A4f)f) βΛη ^ ^ ，各十 贡疋马400〜8〇〇nm，而以6 0 0nm的 光透過率％作為光透過率。 (實施例2) 2 i =厚度為18”、表面粗度卜為0·6心的乳製銅羯544827 V. Description of the invention (7) Furthermore, on the circuit pattern 21, there is a solder resist (sol de: no / w ball grid round killer B 1), which has a field &gt; ten τρτ wide and <so i der ist ) Material coating solution The solder resist formed by screen printing coating 3 ° res layer 23 The COF film conveyor belt manufactured in this way can be used, for example, for IC chips and printed circuit boards under transfer. In the assembly process of other electronic components, C0F assembly can be performed. However, at this time, because the light transmission rate of the insulating layer 2 is more than 50%, the circuit diagram can be imaged by the CCD or the like from the insulating layer 12 side. Recognition, good mutual alignment can be performed through image processing, and electronic components can be assembled with precision. Next, a method of manufacturing the above-mentioned COF film conveyor belt will be described. As shown in f 4U ?, the bite thief prepared a laminated film 10 as shown in FIG. 4, and then used a different method to drill the sprocket hole 22 in FIG. 4 (b) by drilling or the like. This buckle gear hole; # 通 'forms a buckle, or it can be shown from the surface of the insulating layer 12 and the surface of the f layer 12, using ordinary lithography m, and then, as shown in the area 2 1 in Figure 4 A circuit pattern material coating layer 30 is formed on the second photoresist material 11. Of course, it can also be coated with j 2 solution to form a photoresist material. The pin can be inserted into the sprocket gear hole 22 'photoresist material. In addition, after the fixation, the patterning of the position of the warm two-in-one insulating layer 12 through the photomask 3 丨 is patterned to form 30 as shown in FIG. 4 (d) = light and development, and the photoresist material is applied. Layer 3 2. Then, the photoresist pattern body 11 with an unusual line pattern for the line pattern is dissolved and removed with an etching solution, and the pattern 32 is used as a mask pattern, which is dissolved and removed with a test solution or the like. The photoresist pattern 3 2, as shown in FIG. 4 (e), forms a line pattern 91] 13356.ptd 苐 1] Page 544827 5. Description of the invention (8), using the screen printing method, shape 21. Next, as shown in FIG. 4 (f), for example, a solder photoresist layer 23 is formed. (Constant Example 1) A polyimide layer with a thickness of 40 # m as the conductor 11 was formed by coating method to form a layer Λ p, and Masuda 罡 忒 忒 ^ ^ ^ The marginal layer M, as the ⑶ of the embodiment 丄? Laminate 浔 Μ with. The ultra-low-thickness copper foil die / white endurance is 9 // m, and the surface roughness Rz is 1 · 2 // m 〇 Here, the surface roughness Rz is the spleen 钿. ,, j * You will copper It is cut into a size of 10cm X 10cm, and the contact surface roughness measuring machine (Surfcoder SE-30H of Kosaka Research Institute) is the same as, Japanese, Japanese, Japanese. To measure the observing system, a needle with a radius of curvature of 2 μm was used to measure ulcers with a length of 0.8 mm. The length from λ μ to the longitudinal magnification was 5000 times, the lateral magnification was 200 times, and the scanning speed was 0. 1 mm / sec. Guidance on this laminated film for COF! !! a &gt; Gate +] ¥ body 1 1 patterning, measuring the light transmittance (,, ancient | β / Xinqiaowu, crossing 60 0 nm) of the insulating layer 12 of the patterned area The results are given as 7 (U. The results are shown in Table 1 and Figure 5. Here, the light transmittance is measured with an absorbance photometer (day, U-33 0 0). The measurement wavelength is determined by A4f) f) βΛη ^ ^, each Shigong horse is 400 ~ 800 nm, and the light transmittance% of 600 nm is used as the light transmittance. (Embodiment 2) 2 i = 18 "thick, milk surface copper with a thickness of 0.6

ί ί 之外，其餘以與實施例1同樣的作法，作成C0F 用層合溥膜。 對此C0F用層合薄膜的導體丨丨施行圖案化，對經圖案化 的區域的絕緣層！2之光透過率（波長6〇〇nm)加以測定之結Except for ί ί, the rest was made in the same manner as in Example 1 to form a laminated film for COF. The conductor of the laminated film for C0F is patterned, and the insulating layer of the patterned area is patterned! Measurement of the light transmittance (wavelength 600 nm) of 2

544827 五、發明言兒明（9) 果，得75%。此結果，示如表】及圖5。 (實施例3) 用超低粗度銅荡作為導體n，盆 塑性聚醯亞胺樹脂，脾ρ 、隔者尽度1〇 的熱 於導㈣上： ㈣的聚醯亞胺薄膜熱虔合 麻- 左由此方法，形成厚度35 # m的聚醯亞胺 層，以之作為絕緣層12 ’作成實施例3 =亞: 超低粗度銅猪的厚度為9&quot;，表面粗度Rz/2層；専膜 對此C0F用層合薄膜的導體π施行化 :區域的絕緣層12之光透過率(波長临 果，得58%。此結果，示如表}及圖5。 測疋之、、口 (實施例4) 脸=21旱度10㈣的熱硬化性樹脂，將厚度25心的聚醯亞 的取# ‘，、壓合於導體11上，經由此方法，形成厚度35 // m =小酉进亞胺層，以之作為絕緣層丨2，除此之外，立盥 實施例3同樣的作法，作成C0F用層合薄膜。 ..... 對在匕C0F用層合薄膜的導體丨丨施行圖案化，對經 的區域的絕緣層12之光透過率（波長6〇〇nm)加以 =紝 果’身亏5 5 %。此結果，示如表1及圖5。 Ό (比車交例1)544827 V. Inventor (9) The result is 75%. The results are shown in Table] and FIG. 5. (Example 3) Using ultra-low-thickness copper as the conductor n, a pot of plastic polyimide resin, spleen ρ, and a separator as much as 10 are heated on the guide: Polyimide film of ㈣ Hemp-left by this method, a polyimide layer with a thickness of 35 # m is formed and used as an insulating layer 12 '. Example 3 = Asia: Ultra-low thickness copper pig with a thickness of 9 &quot;, surface roughness Rz / Two layers; the fluorene film is used for the conductor π of the laminated film of this COF: the light transmittance of the insulating layer 12 in the region (wavelength is fruit, 58%. The results are shown in Table} and Figure 5. 、 口 (Example 4) Face = 21 aridity 10㈣ thermosetting resin, take Poly # 25 with a thickness of 25 cores and press it on the conductor 11 to form a thickness of 35 // by this method m = small sulfonium imine layer, which is used as the insulation layer 2; otherwise, the same method as in Example 3 was used to make a laminated film for COF. ..... Laminated for COF The conductor of the thin film is patterned, and the light transmittance (wavelength 600 nm) of the insulating layer 12 in the passing region is equal to 55% of the total loss. The results are shown in Table 1 and FIG. 5. Ό (Than the car example 1)

H用厚度為12/zm、表面粗度卜狀^的電解 作為V體11之外，其餘以與實施例i同樣的作冶 用層合薄膜。 作成COF 對4U0F用層合薄膜的導體11施行圖案化，對經 的區域的絕緣層12之光透過率（波長6〇〇nm)加以測^ ^ = 之結 第13頁 91113356.ptd 544827 五、發明說明（ίο) 果，得10%。此結果，示如表1及圖5。 (比較例2) 於厚度3 8 // m的聚醯亞胺薄膜上施行銅鍍敷，形成導 體，作成COF用層合薄膜。又，導體的表面粗度Rz為0. 8 β m 〇 對此COF用層合薄膜的導體施行圖案化，對經圖案化的 區域的絕緣層1 2之光透過率（波長6 0 0 nm )加以測定之結 果，得67%。此結果，示如表1及圖5。但，由於係銅鍍敷 者，故有導體的剝離強度減低、耐移行性變差的問題。 表1 ΟAn electrolytic layer having a thickness of 12 / zm and a rough surface shape was used as H. The V-body 11 was used as the rest, and the rest was laminated in the same manner as in Example i. The COF was used to pattern the conductor 11 of the 4U0F laminated film, and the light transmittance (wavelength 600 nm) of the insulating layer 12 in the passing region was measured. ^ ^ = The knot page 13 91113356.ptd 544827 5. Invention Description (ίο) Fruit, get 10%. The results are shown in Table 1 and FIG. 5. (Comparative Example 2) Copper plating was performed on a polyimide film having a thickness of 3 8 // m to form a conductor, and a laminated film for COF was prepared. The surface roughness Rz of the conductor was 0.8 β m. The conductor of the laminated film for COF was patterned, and the light transmittance of the insulating layer 12 in the patterned area was measured (wavelength 60 nm). As a result of measurement, 67% was obtained. The results are shown in Table 1 and FIG. 5. However, since they are copper-plated, there is a problem that the peeling strength of the conductor is reduced and the migration resistance is deteriorated. Table 1 Ο

Rz ( β m) Ra ( μ m) m) 實施例1 1. 2 0. 2 70 實施例2 0. 6 0. 3 75 實施例3 1. 2 0. 2 58 實施例4 1. 2 0. 3 55 比輕例1 2. 0 0. 3 10 比較例2 0. 8 0.2 67 發明之效杲 如上述說明般，本發明之C0F用層合薄膜及COF薄膜輸送 帶，係無於剝離強度及耐移行性等方面之問題，於I C晶片 或印刷基板等之組裝時可良好地進行對準位置者。 元件5虎之說明 10 C0F用層合薄膜 11 導體Rz (β m) Ra (μm) m) Example 1 1.2 2 0.2 70 Example 2 0.6 0.6 0.3 75 Example 3 1.2 2 0.2 58 Example 4 1.2 2.0 3 55 Light weight example 1 2. 0 0. 3 10 Comparative example 2 0.8 8 0.2 67 Effect of the invention As described above, the laminated film and COF film conveyor belt for COF of the present invention are not related to peel strength and Issues such as resistance to migration can be well aligned during assembly of IC wafers or printed boards. Description of element 5 Tiger 10 Laminated film for C0F 11 Conductor

91113356.ptd 第14頁 544827 五、發明說明（11) 12 絕緣層 12a 塗佈層 20 C0F薄膜輸送帶 21 線路圖案 22 扣鏈齒輪孔 23 焊料光阻層 30 光阻材料塗佈層 31 光罩 32 線路圖案用光阻圖案91113356.ptd Page 14 544827 V. Description of the invention (11) 12 Insulating layer 12a Coating layer 20 C0F film conveyor belt 21 Circuit pattern 22 Chain gear hole 23 Solder photoresist layer 30 Photoresist material coating layer 31 Photomask 32 Photoresist pattern for circuit pattern

91113356.ptd 第15頁 544827 圖式簡單言兒明 圖1為本發明之一個實施形態之COF用層合薄膜的剖視 圖。 圖2 (a)〜（c)為表示本發明之一個實施形態之C0F用層合 薄膜白勺製造方法之一例的剖視圖。 圖3為表示本發明之一個實施形態之C0F薄膜輸送帶的概 略構成圖，（a)為俯視圖，（b)為剖視圖。 圖4 (a)〜（f)為表示本發明之一個實施形態之C0F薄膜輸 送帶白勺製造方法之一例的剖視圖。 圖5為表示實施例及比較例的結果之圖。 〇 Φ91113356.ptd Page 15 544827 Brief description of the drawings Fig. 1 is a sectional view of a laminated film for COF according to an embodiment of the present invention. Figs. 2 (a) to (c) are sectional views showing an example of a method for manufacturing a laminated film for COF according to an embodiment of the present invention. Fig. 3 is a schematic configuration diagram showing a COF film conveyor belt according to an embodiment of the present invention, in which (a) is a plan view and (b) is a cross-sectional view. Figs. 4 (a) to (f) are cross-sectional views showing an example of a method for manufacturing a COF film transport tape according to an embodiment of the present invention. FIG. 5 is a graph showing the results of Examples and Comparative Examples. 〇 Φ

91113356.ptd 第16頁91113356.ptd Page 16

Claims (1)

544827 ’、申凊專利範圍 ---------- 之1構二，COF用層合薄膜，其係由導體層與絕緣層所 絕ί 2 其特徵在☆，上述導體層經蝕刻的區域之， 、味層的光透過率為5 〇%以上。 _ 上述 導申請專利範圍第1項之C〇F用層合薄膜，其中， =二為銅羯，該導體層與上述絕緣層相上述 度Rz為〇. 1〜1. δ /ΖΠ1。 阳之表面粗 絕範圍第1項之c〇f用層合薄膜，“，切 行乾巧係、，二由以聚醯亞胺前驅體樹脂溶液塗佈之彳纟述 知k .硬化而形成者。 印之後，施 •如申睛專利範圍第2項之C 0 F用層人镇越甘 絕緣層，倍妳士、乐貝 用層σ，專膜，其中，上、+、 行乾# ^ u聚醯亞胺前驅體樹脂溶液塗佈之 5 Ϊ Ϊ化而形成者。 布之後，施 絕緣層申=^ ^靶圍第1項之C0F用層合薄膜，其中，μ、、 ^ % RU …、蜃合於上述導體層上之執塑性；@ 述 、承4 Μ所形成者。 …罡性树脂層及絕 絕緣i申ί ί!!範圍第2項之C0F用層合薄膜，其中， 係由熱墨人 曾 宁，上述 ‘薄骐所形成者。〇 ;述V肢層之熱塑性樹脂層及絕 7· 如申請專利〜 絕緣層，係由熱ΪΙ第1項之C0F用層合薄膜’其中，上、，十、 絕緣薄骐所形成者:於上述導體層上之熱硬化性樹脂層^ 8 ·如申請專利^ 絕緣層，係由熱第2項之C〇F用層合薄膜，其中，上述 系巴緣薄膜所妒成者5於上述導體層上之熱硬化性樹脂層及544827 ', the scope of the patent application of Shenyang ---------- 1st structure, the laminated film for COF is insulated by the conductor layer and the insulation layer 2 It is characterized by ☆, the above conductor layer is etched The light transmittance of the taste layer is more than 50%. _ The laminated film for COF of the above-mentioned first patent application scope, wherein = 2 is copper 羯, and the above-mentioned degree Rz of the conductor layer and the insulating layer is 0.1 ~ 1. Δ / ZΠ1. Laminated film for cof in the rough range of the first item of the surface of the sun, ", cut to dryness, and formed by coating with a polyimide precursor resin solution. K. hardening After printing, Shi Rushen ’s patent No. 2 of the scope of patent C 0 F is used for the insulation layer of Yuegan, Beiqi and Lebe for the layer σ, special film, of which, upper, +, line dry # ^ u Polyimide precursor resin solution coated with 5 Ϊ Ϊ Ϊ formed and formed. After the cloth is applied, the insulating layer is applied = ^ ^ The laminated film for the COF of the target item 1, among which μ ,, ^% RU…, the plasticity compounded on the above-mentioned conductor layer; @ 述 、 承 4 Ｍ formed.… Resin-resistant resin layer and insulation insulation application Γ !! Laminated film for COF in item 2 of which, It is formed by Zeng Ning, a hot ink man, formed by the above-mentioned thin thin film. The thermoplastic resin layer and insulation layer of the V limb layer are described in the above. For example, the insulation layer is laminated by the COF of the first item of the thermal film. Thin film 'of which, upper, lower, and lower layers are formed by a thermosetting resin layer on the above-mentioned conductor layer ^ 8 · If a patent is applied ^ The insulating layer is formed by the thermal second The laminated film for COF according to the above item, wherein the thermosetting resin layer and 9】】】3356.ptd 第17頁 5448279]]] 3356.ptd Page 17 544827 91113356.ptd 第18頁91113356.ptd Page 18