TW473834B - Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor - Google Patents

Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor Download PDF

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Publication number
TW473834B
TW473834B TW088102162A TW88102162A TW473834B TW 473834 B TW473834 B TW 473834B TW 088102162 A TW088102162 A TW 088102162A TW 88102162 A TW88102162 A TW 88102162A TW 473834 B TW473834 B TW 473834B
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Taiwan
Prior art keywords
gate
dopant
source
type dopant
patent application
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TW088102162A
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English (en)
Inventor
Toshiharu Furukawa
Mark C Hakey
Steven J Holmes
David V Horak
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Ibm
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Publication of TW473834B publication Critical patent/TW473834B/zh

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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
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    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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    • H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

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473834 A7 B7 五、發明説明（ 發明背景 1.技術領域 。 請* 閱 讀， 背 © 之， 注 意 事 項- 再 填 寫 本 頁 本發明大致和製造半導體晶圓的方法有關，更明確地說 ，本發明和製造-非常淺源極_波極（3/0)延伸而同時捧雜 -非常窄多晶㈣的方法有關。本發明也包含形成的半導 體。 2 .相關文件 迄今，鬲性能晶片的需求已驅使金屬氧半導體場效電晶 體（M0SFET)縮短其通道長度以獲得更高電流。這高性能 需要一淺源極-汲極（S/D)延伸和完全高度摻雜的多晶矽閘 直至閘介電層界面^不過，當多晶矽寬度變得更窄，其長 訂 寬比接近1時，在必|定蝕刻之後藉傳統離子佈植進行多晶 矽閘適量摻雜變得非常困難。 結果，產生了以非常淺S/D延伸產生高度摻雜多晶矽閘 製造的製程之需求。 摘要 經濟部中央標準局員工消費合作社印製 本發明是一種方法其提供了一層（例如一基板）其包含至 少一多晶矽閘和至少一源極/汲極區；而同時摻雜至少一閘 疊層和源極/汲極區。結果，不需额外摻雜物橫向分散就可 生成非常淺的S/D延伸（亦即小於〇. i # m)*同時提供一窄（ 亦即小於0 · 2 // m)，完全高度摻雜的多晶矽閘（亦即大於 备雜物原子數/每立方公分）直至間介電層界面。 本發明也包含形成之半導體展示其非常淺S/D延伸和高 度摻雜多晶矽閘直至閘介電層界面。 -4- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐） 473834 五 、發明説明（ 施:::::::明及顯一 圖式之簡單說明 本發明的較佳實施例合夫 號^ 士 只她例曰參考下列圖形而詳加描述，其中 唬碼代表组成要件，而其中： 中 圖1顯:根據本發明在摻雜前之半導體晶圓； 圖2顯不根據本發明第—實施例接雜的方法； 圖3顯示根據本發明第二實施例捧雜的方法； 圖4顯示根據本發明第三實施例換雜的方法； "圖5顯示根據本發明-另-選擇步驟在形成深S/D擴散之 俊的一結構； 、 圖6顯TF根據本發明一完成的半導體； 圖7顯示根據本發明第四實施例摻雜方法的第一步驟； 圖8顯示根據本發明第四實施例摻雜方法的第二步驟。 較佳實施例的敘述 經濟部中央標準局員工消費合作社印製 雖然本發明一些較佳實施例會列出並詳加描述；但需了 解到在不偏離申請專利範圍的領域内可有不同的改變和修 正產生。本發明的領域絕不受限於組成成份的數目，使用. 物質，形狀，相對排列等，及描述較佳實施例作為一範本 。更特別地說，本發明被使用在高性能邏輯技術上。不過 ’本發明亦可使用於摻雜高密度非揮發性隨機存取記憶體 (NVRAM)裝置或其他裝置的閘和S/D延伸之上。 圖1是一高性能互補金屬氧半導體（CMOS)IO裝写承據傳 統技術在裝置隔離形成，N井和P井形成及閘疊層形'成之後 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） 473834 A7 B7 五、發明説明（ 而在根據本發明摻雜之前的側面圖。該裝置在製造製程到 此時遇常包含：一矽層或基板12其有許多淺溝Μ隔離 ，例如0.3至0·4微米深，的表面。裝置1〇的井i6，“位 於淺溝14之間。該裝置包含一？井16和一^^井^。 多晶矽閘疊層20也出現在製程中此一時機。閘疊層2〇通 4包含一閘介電層2 2，例如二氧化矽，和在井丨6，丨8上一 多晶矽主體或閘24。在多晶矽閘24的上層表面之上，於閘 疊層蝕刻之前生成一層間接線物質26以取代之後形成鈦矽 化物之需求。這接線物質可以是任何高傳導物質。例如鎢 (W)或鎢矽化物（wsix)。 在此時，根據本發明，多晶矽閘24與源極/汲極（S/D)區 同時被掺雜。 經濟部中央標準局員工消費合作社印製 如圖2所示，在本發明第一實施例中，氣態摻雜被選擇作 為同時摻雜多晶矽閘和S/D區之方式。特別在此實施例中 ，閘®層2 0和井1 8不欲被摻雜部份被適當的防止擴散物質 40所覆蓋。這防止擴散物質4〇可以許多方法來沉積例如化 學氣態沉積（CVD)，蒸氣態沉積或濺鍍。甚者，防止擴散 物質40可以使用不同形式物質。例如，視製程的進度可使 用氮化石夕或二氧化矽。接著，為了要摻雜未覆蓋區域， S/D區19和多晶矽閘24暴露於一選定型式，亦即η或p型， 的氣怨（或電漿）摻雜源3 〇中，而整個裝置視所使用的摻雜 物而被加熱超過8 〇 〇它。這氣體視所掺雜的型態，亦即ρ型 或η型’而可選用不同形式。例如^型氣態掺雜物可用三氯 化绅（AsCh)，三氟化砷（AsF3)，磷化氫（ρΗ3)，三氯化 -6- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 473834 A7 B7 五 、發明説明（ 4(pci3) ’二氟化磷（ρρ3)和砰化氫（ash3)。 通常’加熱是以火爐加熱來進行。不過，另有一選擇， 可以只加熱有摻雜的區域。當晶圓是藉例如，遮蔽的雷射光 ^ (此處未顯示）或快速熱退火式燈（此處未顯示）而暴露於 氣態（或電漿）摻雜源3 〇中可使用此種選擇法。注意，若是 使用逖蔽的雷射光束的話，也許可不需要擴散防止物質4 〇 〇 接著，移除擴散防止物質4 〇而視第一次所使用的摻雜源 1閘疊層20和S/D區19以另一型摻雜源，亦即p型或n型， 將製程重複一次。P型摻雜源有：雙硼烷（B2H6)，三氯化硼 (B C 13)，和三氟化硼（B ρ 3)。 上述方去&供了 一窄多晶矽閘，亦即小於〇 · 2微米，其從 側牆方向摻雜以確保多晶矽閘主體2 4的高度摻雜直至閘介 電層界面，亦即閘主體24和介電層22交界處。以離子佈植 來摻雜並未有摻雜物額外的橫向分散就達成了深度小於〇 . 1 微米的淺S / D延伸摻雜 請· 先 閲 % 背 面 务· 意 事 項- 再 填 寫 本 頁 訂 經濟部中央標準局員工消費合作社印製 本發明第二實施例使用固態摻雜。在此實施例中，如圖 所示，第一型摻雜源物質15〇首先以，例如化學氣g沉 (CVD)，而沉積於閘疊層ι2〇和相關s/d區之上。這第一 型摻雜物質150可使用不同形式。例如，摻雜硼的矽玻璃 (BSG)可作為ρ型摻雜物。接著，沉積一薄的擴散防止物質 1 4 0。再次，這擴散防止物質丨4 〇可有許多形式例如，氮化 石夕或二氧化石夕。 第型摻雜物1 5 0和擴散防止物質1 4 〇接著被定型（例如 3 積 本紙張尺度適用中國u家標準（CNS) M規格（训/撕公餐 4^3834
五、 發明説明（ 經濟部中央標準局員工消費合作社印製 ，藉使用光阻劑（此處未顯示），曝光，沖洗和蝕刻）使得第 型备雜物1 5 0在指定井區，例如η井面積丨丨8，上只與 S/D區和多晶矽閘124接觸。接著，第二型摻雜物16〇，例 如以摻雜砷的矽玻璃（ASG)作為11型摻雜物，覆蓋整個裝置之 上。 然後加熱整個裝置以驅使摻雜物源物質丨5 〇，6 〇向多晶 石夕和S / D區移動。或者，掺雜面積的順序，亦即p井或n井 ，可以對調。特別而言，第一型摻雜物1 5 0可以是η型摻雜 物源物質而擴散防止層丨4 〇被沉積和定型使得在ρ井面積 116上η型摻雜物15〇僅和S/D區及閘疊層12〇接觸。甚者 ，η型摻雜物可在第二摻雜源物質沉積之前就先深入裝置内 。ρ型摻雜源物質然後沉積而摻雜物深入裝置中。藉此法， 兩型掺雜物的接面深度可被控制成差不多一樣。再一次， 結果是可形成非常淺S/D延伸和一高度摻雜的多晶矽閘， 亦即大於1019摻雜物原子/每立方公分，直至閘介電層界面 在本發明第三實施例中，提供了固態摻雜和氣態（或電漿 )摻雜的組合。如圖4所示，第一區域i 〇R，其包含第一 S/D區219R和一多晶矽閘224R，以防止擴散物質24〇覆蓋 其上並以一固態摻雜源25〇施以摻雜。特別的是，第一型 才爹雜物源2 5 0，如以b s G作為p型摻雜物，和一薄層防止擴 散物質240，如氮化矽或二氧化矽，沉積，定型及蝕刻使 得第型I雜物250僅和位於第一區域1〇R特定井2丨8之上 的S/D區2 19R和多晶矽閘疊層22〇11接觸。 本紙張尺度適用中國國家標準（CNS ) A4規格（210x297公釐） (t先閱後背面之注意事項再填寫本頁) ·—. 473834 五、 發明説明（ 請 先 閱 讀 背 面 $· i 事 項， 再 填I 寫幾 本 頁 同時，包含第二S/D區219L和多晶矽閘224L的第二區域 10L以一層防止擴散物質24〇罩住第一區域1〇R而於一氣態 (或電漿）下摻雜。接著此裝置被加熱至高於8 〇 〇 〇C而在第二 區域1 0 L之上的s / D區2 1 9 L和多晶矽閘疊層2 2 0 L則暴露於 氣怨2 3 0下如砷化氫（a s Η3)。再一次，另一種選擇作法是 掺雜區域型式的順序，亦即ρ井和η井，可以調換。也就是 說，一η型摻雜源物質，例如ASG，和防止擴散物質24〇， 例如二氧化矽，被沉積和定型使得η型摻雜物2 5 0僅和位於 Ρ井區域2 1 6之上的S / D區2 1 9 L和多晶矽閘疊層2 2 0 L接觸 。甚者，η型摻雜物可在藉氣態摻雜執行ρ型摻雜之前就先 被推入晶片中。再一次，兩種型式摻雜物的接面深度可藉 此法而控制在差不多相同位置，而最.後完成的半導體其有 高度摻雜的多晶矽閘224L，亦即大於每立方公分1〇ΐ9個換 雜物原子，完全穿透直至閘介電層222的界面及非常淺的 S/D延伸，亦即小於〇 . 1微米。 經濟部中央標準局員工消費合作社印製 由本發明上述實施例的結果來看，深的源極/汲極擴散摻 雜’亦即大於0·1微米，是容易多了。特別是，如圖5所示 ’在窄多晶矽閘3 2 4和S / D延伸3 1 9被摻雜後，空間障礙形 成物貝3 4 2 ’如一氧化秒或氣化秒，可以沉積和蚀刻而形 成閘障礙物（spacer) 3 44。若使用固態摻雜源物質的話， 摻雜源物質，如BSG 3 5 2，可能會形成部份障礙物3 44如 圖5所示。 接下來，以遮蔽光罩（此處未顯示）覆蓋相反型式摻雜區 域而執行N +或P +離子佈植以便於較淺的s / d擴散3 1 9附近 -9- 本紙張尺度適用中國國家標準（CNS〉A4規格（210X297公釐） 473834 A7 B7 五、發明説明（7 經濟部中央標準局員工消費合作社印製 形成深的S/D擴散3 17。較寬的多晶矽閘（此處未顯示）也以 此佈植來被掺雜。摻雜物藉快速熱退火（11丁八）或^傳統焯 中加熱而被活化。障礙物的使用是使深的S/D擴散3 17離& 置閘3 2 5的邊緣夠遠而能減少短通道效應。深的s 擴散 3 1 7需要在擴散區域之上形成矽化物而不致造成嚴重接面 漏電流而且要形成擴散接觸而不致使井短路。 在深的S/D擴散（大於Ο·!微米）形成後，如圖6所示，矽 化物4 8 0選擇性地在擴散4 17、4 19上形成。形成的矽化物 有不同的形式，例如，TiSlx*CoSix。接著沉積絕緣物質 4 8 2以覆盍閘璺層4 2 0之間和之上。絕緣物質亦有不同形式 ，例如，二氧化矽或氮化矽。這階段較偏好使用二氧化矽。 絕緣物質482接著藉例如化學機械拋光（CMp)拋光/移除 而被平坦化。接著蝕刻接觸孔484穿過絕緣物質482至s/d 擴散4 1 7。接觸孔4 8 4以南傳導物質4 8 6填充。這物質可以 是任何尚傳導物質，例如，鎢（w)，鎢矽化物（WSix)，鈦 石夕化物（TiSix)，鉬（Mo)，鉬矽化物（M〇Six)，或高度掺 雜多晶石夕。高度傳導物質48 6接著藉例如CMP平坦化以形 成一接觸栓塞488。然後，在接觸栓塞488上形成第一層金 屬線4 9 0以將場效電晶體（f e T )裝置接線成所要的電路（此 處未顯示）。 圖7和8顯示本發明的第四實施例。在此，一種裝置型式 的閘疊層5 2 0以本實施例的製程形成和摻雜然後再形成和 掺雜另一裝置型式的閘疊層5 2 〇。其餘製程步驟和上述第 一實施例中的步驟相同在此不再贅述。 請· 先 閱 S 事 項- 再 填 寫 本 頁 訂 -10- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 473834 經濟部中央標準局員工消費合作社印製 Α7 Β7 五、發明説明（8) 在閘疊層5 20形成之後，亦即含閘介電層522，多晶矽層 5 2 4 ’南傳導物層5 2 6和^一防止擴散層5 4 0，僅有位於第一 井區域5 1 8，亦即n井區域，之上的閘疊層5 2 0被定型及姓 刻。這在另一型式裝置形成的區域内留下定義清楚的窄問 金層528和一堆未定義的閘登層529。接著，一第一型摻雜 源物質5 5 0，例如ρ型掺雜物如B S G，和一防止擴散物質 5 9 0沉積於整個裝置之上。有許多方式的沉積，例如CVD 。在此之後以傳統加熱方法將摻雜物推入晶片中。 接著，如圖8所示，在第二井區域5 1 6，例如ρ井區，之 上的閘疊層5 2 9被定型和蝕刻。一光阻劑，此處未顯示， 可以使用覆蓋第一井區域518。接著，在第二井區域516之 上暴露出來的閘多晶矽524以如第一實施例中描述的氣態 摻雜物5 3 0來摻雜。或者，掺雜型式的順序可以調換，亦 即，在P井區上的閘疊層可以先被定型和蝕刻，而擴散延伸 和閘夕日曰石夕可用一 η型氣態摻雜物來掺雜。在擴散延伸和閘 多晶矽的η型摻雜之後，就沉積一防止擴散層。接著，在第 二井區之上的閘疊層被定型和蝕刻，而擴散延伸和閘多晶 矽則以一氣態摻雜物或固態摻雜物來摻雜。從此處，寬的 閘疊層和深的S/D擴散摻雜之後是接觸孔生成及接線，這 正如前所述在此不再重複。 本發明也包含完成的半導體。從以上所討論的方法可看 出，完成的半導體有獨特的結構特性並非以前所能及。特 別的疋，芫成的半導體有一窄多晶矽閘24，亦即，小於 0·2微米’其亦為高度捧雜直至閘介電層界面（見圖D。按 (誇先閲讀背面t注意事項再填寫本頁)
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473834 A7
雜的程度或多晶石夕閘的密度是大於每立方公分丨〇 i 9個換雜 物原子。而且，完成的半導體有一非常淺的S/D延 度小於0. 1微米。 ^ 雖然本發明是和上述特定實施例一起敘述，但是對熟乘 此項技藝人士可有不同的作法，修改和變化。因此，本發 明較佳實施例是用來展示而非侷限於其中。在不偏離本^ 明的精神和領域下可對於申請專利範園内之敘述作不同^ 變。例如在第二實施例中，第一型摻雜物可用氣態摻雜方 式來進行或第一摻雜物是n型摻雜物而非p型。甚者，一般 技藝人士亦可了解到在不偏離本發明的領域下可對特別物 質的使用作不同的修正。 (誇先閲讀背面之注意事項再填寫本頁) . 、1Τ 經濟部中央標準局員工消費合作社印製 本纸張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐）

Claims (1)

  1. κ、申請專利範圍 1· -種用來轉-半導體 a) 提供-層其包含至 /驟包含：. ;及 Θ ®層和至少一源-汲極區 b) 同時摻雜至少一 2.如申請專利範圍第i項：方' 至少-源-汲極區。 包含以一介電層和—多其中提供一層的步驟更 ,^ _ ρ. . « . ^ "曰夕閘主體形成至少一閘疊層 母閘登層包含侧牆。 3·如申清專利範園第2項乏 含穿過侧牆而摻雜每I多同時摻雜的步驟包 4·如申請專利範園第2項 甲王脱的步驟。 肖人 ，、又万法，其中提供一層的步騾更 包含以-導體層形成至少—間疊層。 5 .如申請專利範圍第1項 各脏石,、 万法，其中同時摻雜的步騾包 y 層和至少—源·汲極區暴露於含-選定 =雜物之氣體中和含—選定第一摻雜物之電漿中 •，然後將半導體加熱。 6·:申請專利範圍第5项之方法，更包含一步驟即同時將 :::的閘疊層和任何剩下的源汲極區暴露於含一 +疋罘一摻雜物的氣體和含一選定第二摻雜物之電漿 中；然後將半導體加熱。 7. =申請專利範圍第6項之方法，其中第—摻雜物是p型 摻雜物和η型摻雜物的其中之一，而第二摻雜物 型#雜物和η型摻雜物的另外一個。 8. 如申請專利範圍第7項之方法，其中㈣掺雜物是三氯 t砷化氫，二氟化砷，磷化氫，三氯化鱗和三 473834 申請專利範圍 化磷的其中之一；而P型摻雜物則為雙硼烷，三霁化硼 和三氟化硼其中之一。 9·如申凊專利範圍第1項之方法，其中同時摻雜的步驟更 包含： b 1) >冗積一第一型摻雜物源物質越過至少一閘疊層和 至少一源-汲極區； b2)沉積一防止擴散物質越過第一型摻雜物源物質； b 3 )沉積一第二型摻雜物源物質越過未被第一型摻雜 物源物質覆蓋的任何閘疊層和任何源-汲極區； b 4 )加熱半導體以使掺雜物源物質的摻雜物深入其中。 10.如申請專利範圍第9項之方法，其中第一型摻雜物是摻 訂 雜坤的石夕玻璃和摻雜硼的矽玻璃其中之一，而第二型 捧雜物是摻雜砷的矽玻璃和摻雜硼的矽玻璃的另外一 個。 η.如申請專利範園第1項之方法，其中同時摻雜的步驟包 含： if b 1)沉積一第一型摻雜物源物質越過至少一閘疊層和 至少一源-汲極區； 質 露 工 b 2 )沉％ —防止擴散物質越過第一型摻雜物源物質； b3)同時加熱裝置使第一型摻雜物源物質之摻雜物深 入其中並將未被第一型摻雜物源物質和防止擴散物 覆盍的任何剩下的閘疊層和任何剩下的源_汲極區暴 於含一選定的第二型摻雜物之氣體和含一.二 型摻雜物之電漿中。 的* -14· 本紙張尺度適用中國國家標準（CNS )八4祕（210X297^7 473834 A8 B8 C8 D8 六、申請專利範圍 經濟部中央標準局舅工消費合作社印製 •如申請專利範圍第"項之方法，…—尖修雜 型摻雜物和η型摻雜物其中之―，而第二型摻雜物是 型摻雜物和η型摻雜物中另外一個。 13·如申請專利範圍第η項之方法，其中第—型接雜物源 物質是摻雜砷的矽玻璃；及 第一型摻雜物是雙硼烷，三氯化硼和三氟化硼二 其中之一。 —^ R如申請專利範圍第"項之方法，其中第一型摻雜物是 摻雜硼的石夕玻璃；及 疋 第二型摻雜物是三氯化砷，砷化氫，三氟化砷，磷 化氫’三氯化磷，和三氟化磷其中之一。 15. 如申請專利範圍第！項之方法，其中提供一層的步驟 含一閘疊層寬度小於〇 . 2微米。 ^ 16. —種用來生成一半導體之方法，步驟包含· a) 提供一供半導體用之層； b) 製造至少一閘疊層於該層之上； c )製k至少一源_ ί及極區於該層之中；及 d)同時摻雜至少一閘疊層和至少一源_汲極區。 17·如申請專利範圍第16項之方法，更包含一步驟即在步 驟b )之前製造許多淺的隔離槽於該層之中。 . 18.如申請專利範圍第1 6項之方法，其中步驟b)更包含 P 包 (請先閲讀背面之注意事項再填寫本頁} -訂 介電層和一多晶秒閘主體形成每_閘疊層，每 以 疊層包含侧牆 19·如申請專利範圍第18項之方法，其中步驟b)更包含β
    • 1- - - ! I 寸m層形成每一閘疊層。 2Ό·如申清專利範圍第1 6 jg 士士、t ^ ^ 万法，其中同時摻雜的步騾 G έ從侧牆摻雜多晶矽閘主體的步驟。 21·如申請專利範圍第1 6項之 甘a门& η 万去，其中同時摻雜的步騾 包含將至少一閘疊層和至少_源_汲極區暴露於含一選 足的第一捧雜物之氣體和含一選定的第-掺雜物之電 漿中；及 ％ 加熱該半導體。 22. 如申請專利範圍第21項之方法，更包含_步驟即同時 將任何剩下的閘#層和任何剩下的源極區暴露於含 一選足的第二掺雜物之氣體和含-選定的第二掺雜物 之電漿中；及 加熱該半導體。 其中同時摻雜的步驟 23. 如申凊專利範圍第1 6項之方法 包含： 和 d 1 )沉積一第一型摻雜物源物質越過至少一閘疊層 至少一源-波極區； d2)沉積一防止擴散物質越過第一型摻雜物源物質； 經濟部中央標準局員工消費合作社印製 d 3 ) >儿積一第二型摻雜物源物質越過未被第一型摻雜 物源物質覆蓋的任何剩下的閘疊層和任何剩下的源_减 極區；及 d 4 )加熱該裝置以使第一和第二型掺雜物源物質的轉 雜物深入其中。 ^ 24.如申請專利範圍第丨6項之方法，其中同時摻雜的步帶 -16 - 本紙張尺度適家標率（CNS ) M祕（21〇x29^j^y 六、申請專利範圍 包含： d 1 )沉積 型摻雜物源物質越過至少一閘疊層和 至少一源-沒極區； d 2 )’儿和一防止擴散物質越過第一型摻雜物源物質； d3)同時加熱該裝置以使第_型摻雜物源物質的接雜 物木入其中並將未被第_型摻雜物源物質和防止擴散 物質覆蓋的任何剩下的閘疊層和任何剩下的源_沒極區 暴露於含一選定的第二摻雜物之氣體和含-選定的第 二掺雜物之電漿中。 25.如申請專利範圍第丨6項 左卉〒在孩層之上製造 至少一閘疊層的步騾包含提供至少一 乂 夕晶矽閘主體立 寬度小於0.2微米。 ” 26· —種半導體裝置，包含： 一基板； 形成於基板上之至少一閘極； 形成於基板之至少一源極-汲極區域； 其'深度小於0 . 1 形成於基板之一源極-汲極延伸區域 微米。 27· —種半導體裝置，包含： 一基板； 形成於基板上之至少一閘疊層； 形成於基板之至少一源極-汲極區域；及 其中該閘疊層包含： 一閘介電層部份；及 -17- 本紙張尺度適用中國國家標準（CNS ) A视格（210X297公釐） 473834 as B8 C8 D8 六、申請專利範圍 一多晶石夕閘於一界面與閘介電層部份耦合，f晶石夕 閘其掺雜物的密度大於每立方公分1019個摻雜物原子完 全穿透至與閘介電層的界面。 28. 如申請專利範圍第27項之半導體裝置，其中多晶矽閘 的寬度小於0.2微米。 29. 如申請專利範圍第2 7項之半導體裝置，其中該半導體 更包含一源-汲極延伸其深度小於0 . 1微米。 (請£閱讀背面之：^意事1再填寫本頁) 經濟部中央標準局員工消費合作社印裝 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐）
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