TW448332B - Active matrix substrate and method for producing the same - Google Patents
Active matrix substrate and method for producing the same Download PDFInfo
- Publication number
- TW448332B TW448332B TW086105157A TW86105157A TW448332B TW 448332 B TW448332 B TW 448332B TW 086105157 A TW086105157 A TW 086105157A TW 86105157 A TW86105157 A TW 86105157A TW 448332 B TW448332 B TW 448332B
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- lines
- insulating film
- substrate
- active matrix
- pixel electrodes
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134336—Matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/937—Hillock prevention
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Description
六、申請專利範圍 m中層絕緣膜係形成為具有足夠厚度,使得於其 上所形成的像素極具有實質上平坦的表面; 其中去除閘絕緣膜部y八、 二_ 丫刀疋步驟係在形成第二線之步驟 ^、订’且閘絕緣膜之去除部份係決定為定位於該像素 下且不已"纟疋位於提供帛一線與切換元件之區域 中之邵份。 6.根據申請㈣範㈣μ料產生-主動㈣型基板之 三· /、中主動矩陣型基板另包含設於像素極下方之貯 子#極n存電容極係與—相對應像素極之一部份 構成一辟存電容, 其中貯存電容極係隨第-線而製成於基板上,及 其中足位於欲製成辟存電容極之區域中之閘絕緣膜部 份係未去除。 7·根據中請專利第6项用於產生—主動矩陣型基板之 万法’其中切換it件包含閘極、源極、漏極及半導體部 份’且閘極隨第一線製成,而源極與漏極隨第二線製成 ,及 其中去除閘絕緣膜部份之步驟係在形成第二線、源梓 與漏極之步驟前進行。 μ 8. 根據申請專利範圍第5項用於產生一主動矩陣型基板之 万法,其中中層絕緣膜具有—^以令像素極表面呈大致 平坦狀之厚度,且無關於像素極下方有/無第一線、第 二線及切換元件存在。 9. 根據申請專利範圍第5項用於產生一主動矩陣型基板之方
O:\47\47537-911108.DOC 448332
法,其中主動矩陣型基板另包含連接第—、二線至少其 中一者之線端,以及貫穿閘絕緣膜而到達線端之接觸孔 〇 10. 根據中請專利範圍第9項用於產生—主動矩陣型基板之 万法,其中接觸孔係在去除閘絕緣膜部份之步驟前製成。 11. 根據中請專利範圍第9項用於產生—主動矩陣型基板之 万法,其中接觸孔係與去除閘絕緣膜部份同時製成。 12. 根據_請專利範圍第5項用於產生一主動矩陣型基板之 方法其中主動矩陣型基板另包含接觸孔,且係在形成 像素極之步驟前即貫穿中層絕緣膜而到達漏極。 13. —種主動矩陣型基板,包含: 一基板; 多數第一線,設於基板上且互相平行; 一絕緣膜,覆蓋第一線; 夕數第一線又於基板上且延伸過第一線,而令絕緣 膜介置於其間; 多數切換元件,鄰近於第一、二線之各別交又點;及 多數像素極,係以矩陣型排列於絕緣膜上,且分別連 接於切換元件, 其中間隙設於第二線與像素極之間,及 其中對應於間隙之絕緣膜部份係予以去除;且 其中該絕緣膜之去除部份與該像素極及該第二線重疊。 14·根據申請專利範圍第丨3項之主動矩陣型基板,其中第一 線係閘線,而第二線係源線。 O:\47\47537-911108.DOC -4-
448332 as B8 C8 D8 六、申請專利範圍 15. 根據申請專利範圍第1 3項之主動矩陣型基板,其中像素 極係製成不重疊於絕緣膜之去除部份。 16. 根據申請專利範圍第1 3項之主動矩陣型基板,其另包含 形成於像素極下方之貯存電容極,各貯存電容極係與一 相對應像素極之一部份構成一貯存電容。 17. 根據申請專利範圍第1 3項之主動矩陣型基板,其另包含 連接於第一、二線至少其中一者之線端, 其中對應於線端之絕緣膜部份係去除而露出至少部份 之線端,藉此形成接觸孔。 18. —種主動矩陣型基板,包含: 一基板; 多數第一線,設於基板上且互相平行; 一閘絕緣膜,覆蓋第一線;’ 多數第二線,設於基板上且延伸過第一線,而令閘絕 緣膜介置於其間; 多數切換元件,鄰近於第一、二線之各別交叉點; 一中層絕緣膜,覆蓋閘絕緣膜、第二線及切換元件; 多數像素極,係以矩陣型排列於中層絕緣膜上,且分 別連接於切換元件,及 多數貯存電容,提供於各別之像素極, 其中該中層絕緣膜係形成為具有足夠厚度,使得於其 上所形成的多數像素極具有實質上平坦的表面; 其中閘絕緣膜部份係去除,而使去除部份係定位於該 像素極之下且不包含其定位於提供第一線、切換元件及貯 O:\47\47537-911108.DOC - 5 - 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
S 8 8 8 A B c D 448332 六、申請專利範圍 存電容之區域内之部份。 19.根據申請專利範圍第1 8項之主動矩陣型基板,其另包含 連接於第一、二線至少其中一者之線端, 其中對應於線端之閘絕緣膜部份係去除而露出至少部 份之線端,藉此形成接觸孔。
O:\47\47537-911108.DOC 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10007496 | 1996-04-22 | ||
JP5308597A JPH1010583A (ja) | 1996-04-22 | 1997-03-07 | アクティブマトリクス基板の製造方法、およびそのアクティブマトリクス基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW448332B true TW448332B (en) | 2001-08-01 |
Family
ID=26393798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086105157A TW448332B (en) | 1996-04-22 | 1997-04-21 | Active matrix substrate and method for producing the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US6025892A (zh) |
JP (1) | JPH1010583A (zh) |
KR (1) | KR100264112B1 (zh) |
TW (1) | TW448332B (zh) |
Cited By (2)
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US6839099B2 (en) | 2000-05-31 | 2005-01-04 | Sharp Kabushiki Kaisha | Liquid crystal display device and deficiency correcting method thereof |
TWI396025B (zh) * | 2009-06-30 | 2013-05-11 | Au Optronics Corp | 主動元件陣列基板 |
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KR100543029B1 (ko) * | 1998-07-24 | 2006-05-11 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
US6900854B1 (en) | 1998-11-26 | 2005-05-31 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for a liquid crystal display |
JP4796221B2 (ja) * | 1998-11-26 | 2011-10-19 | 三星電子株式会社 | 液晶表示装置用薄膜トランジスタ基板及びその製造方法 |
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JP3329313B2 (ja) | 1999-06-02 | 2002-09-30 | 日本電気株式会社 | 薄膜トランジスタアレイおよび薄膜トランジスタアレイ製造方法 |
KR100623981B1 (ko) * | 1999-07-16 | 2006-09-13 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4118485B2 (ja) | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR20020002052A (ko) * | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | 프린지 필드 구동 모드 액정 표시 장치의 제조방법 |
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JP3239504B2 (ja) * | 1993-01-13 | 2001-12-17 | 富士通株式会社 | 薄膜トランジスタマトリクスの製造方法 |
GB2282011A (en) * | 1993-09-21 | 1995-03-22 | Nnc Ltd | A helical annular linear induction pump |
JPH07131030A (ja) * | 1993-11-05 | 1995-05-19 | Sony Corp | 表示用薄膜半導体装置及びその製造方法 |
JP3214202B2 (ja) * | 1993-11-24 | 2001-10-02 | ソニー株式会社 | 表示素子基板用半導体装置 |
JP3059915B2 (ja) * | 1994-09-29 | 2000-07-04 | 三洋電機株式会社 | 表示装置および表示装置の製造方法 |
-
1997
- 1997-03-07 JP JP5308597A patent/JPH1010583A/ja active Pending
- 1997-04-17 US US08/839,268 patent/US6025892A/en not_active Expired - Lifetime
- 1997-04-21 TW TW086105157A patent/TW448332B/zh not_active IP Right Cessation
- 1997-04-22 KR KR1019970014920A patent/KR100264112B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6839099B2 (en) | 2000-05-31 | 2005-01-04 | Sharp Kabushiki Kaisha | Liquid crystal display device and deficiency correcting method thereof |
TWI396025B (zh) * | 2009-06-30 | 2013-05-11 | Au Optronics Corp | 主動元件陣列基板 |
Also Published As
Publication number | Publication date |
---|---|
KR100264112B1 (ko) | 2000-08-16 |
US6025892A (en) | 2000-02-15 |
JPH1010583A (ja) | 1998-01-16 |
KR970071090A (ko) | 1997-11-07 |
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