TW430805B - Semiconductor memory device having a voltage converting circuit - Google Patents

Semiconductor memory device having a voltage converting circuit

Info

Publication number
TW430805B
TW430805B TW086103636A TW86103636A TW430805B TW 430805 B TW430805 B TW 430805B TW 086103636 A TW086103636 A TW 086103636A TW 86103636 A TW86103636 A TW 86103636A TW 430805 B TW430805 B TW 430805B
Authority
TW
Taiwan
Prior art keywords
power source
source voltage
internal power
ints
memory device
Prior art date
Application number
TW086103636A
Other languages
English (en)
Inventor
Kazutaka Miyano
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW430805B publication Critical patent/TW430805B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
TW086103636A 1996-03-22 1997-03-22 Semiconductor memory device having a voltage converting circuit TW430805B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8065904A JP3013773B2 (ja) 1996-03-22 1996-03-22 半導体装置

Publications (1)

Publication Number Publication Date
TW430805B true TW430805B (en) 2001-04-21

Family

ID=13300424

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103636A TW430805B (en) 1996-03-22 1997-03-22 Semiconductor memory device having a voltage converting circuit

Country Status (4)

Country Link
US (1) US6021080A (zh)
JP (1) JP3013773B2 (zh)
KR (1) KR100260476B1 (zh)
TW (1) TW430805B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4485637B2 (ja) * 2000-02-24 2010-06-23 富士通マイクロエレクトロニクス株式会社 半導体装置及び半導体装置の内部電源生成方法
JP2003100075A (ja) * 2001-09-25 2003-04-04 Mitsubishi Electric Corp 半導体記憶装置
KR100406558B1 (ko) 2001-12-21 2003-11-20 주식회사 하이닉스반도체 반도체 메모리 소자의 전압 발생장치
JP4970722B2 (ja) * 2004-12-16 2012-07-11 エルピーダメモリ株式会社 半導体チップ及び半導体メモリ装置
KR100850276B1 (ko) * 2007-03-23 2008-08-04 삼성전자주식회사 반도체 장치에 적합한 내부전원전압 발생회로
JP2011216837A (ja) 2010-03-17 2011-10-27 Toshiba Corp 半導体記憶装置
JP2012252762A (ja) * 2011-06-07 2012-12-20 Elpida Memory Inc 半導体装置
KR101698741B1 (ko) * 2016-02-03 2017-01-23 주식회사 티에스피글로벌 메모리칩, 메모리 장치 및 이 장치를 구비하는 메모리 시스템

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2675052B2 (ja) * 1988-03-23 1997-11-12 株式会社日立製作所 半導体装置
JPH0253289A (ja) * 1988-08-16 1990-02-22 Oki Electric Ind Co Ltd 半導体記憶装置
JP3006014B2 (ja) * 1990-02-13 2000-02-07 日本電気株式会社 半導体メモリ
JPH07105682A (ja) * 1993-10-06 1995-04-21 Nec Corp ダイナミックメモリ装置
JP3239581B2 (ja) * 1994-01-26 2001-12-17 富士通株式会社 半導体集積回路の製造方法及び半導体集積回路
JP3160480B2 (ja) * 1994-11-10 2001-04-25 株式会社東芝 半導体記憶装置
JP3296142B2 (ja) * 1995-06-16 2002-06-24 富士通株式会社 半導体メモリ

Also Published As

Publication number Publication date
JP3013773B2 (ja) 2000-02-28
US6021080A (en) 2000-02-01
JPH09259584A (ja) 1997-10-03
KR970065700A (ko) 1997-10-13
KR100260476B1 (ko) 2000-07-01

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees