TW412828B - DRAM cell capacitor and method for fabricating thereof - Google Patents
DRAM cell capacitor and method for fabricating thereof Download PDFInfo
- Publication number
- TW412828B TW412828B TW088101191A TW88101191A TW412828B TW 412828 B TW412828 B TW 412828B TW 088101191 A TW088101191 A TW 088101191A TW 88101191 A TW88101191 A TW 88101191A TW 412828 B TW412828 B TW 412828B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- conductive
- opening
- insulating layer
- electrode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980014851A KR100270210B1 (ko) | 1998-04-25 | 1998-04-25 | 디램 셀 커패시터 및 그의 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW412828B true TW412828B (en) | 2000-11-21 |
Family
ID=19536714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088101191A TW412828B (en) | 1998-04-25 | 1999-01-27 | DRAM cell capacitor and method for fabricating thereof |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2000022099A (ko) |
| KR (1) | KR100270210B1 (ko) |
| CN (1) | CN1236993A (ko) |
| DE (1) | DE19908446A1 (ko) |
| FR (1) | FR2778019A1 (ko) |
| GB (1) | GB2336716B (ko) |
| TW (1) | TW412828B (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6426249B1 (en) * | 2000-03-16 | 2002-07-30 | International Business Machines Corporation | Buried metal dual damascene plate capacitor |
| KR100502410B1 (ko) * | 2002-07-08 | 2005-07-19 | 삼성전자주식회사 | 디램 셀들 |
| KR100510527B1 (ko) | 2003-05-01 | 2005-08-26 | 삼성전자주식회사 | 스토리지 전극을 포함하는 반도체 소자 및 그 제조 방법 |
| KR100545865B1 (ko) * | 2003-06-25 | 2006-01-24 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| CN111599812B (zh) * | 2015-04-30 | 2023-07-04 | 联华电子股份有限公司 | 静态随机存取存储器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5438011A (en) * | 1995-03-03 | 1995-08-01 | Micron Technology, Inc. | Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples |
| JP2776331B2 (ja) * | 1995-09-29 | 1998-07-16 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US5643819A (en) * | 1995-10-30 | 1997-07-01 | Vanguard International Semiconductor Corporation | Method of fabricating fork-shaped stacked capacitors for DRAM cells |
| US5721154A (en) * | 1996-06-18 | 1998-02-24 | Vanguard International Semiconductor | Method for fabricating a four fin capacitor structure |
| US5744833A (en) * | 1996-08-16 | 1998-04-28 | United Microelectronics Corporation | Semiconductor memory device having tree-type capacitor |
| GB2322964B (en) * | 1997-03-07 | 2001-10-17 | United Microelectronics Corp | Polysilicon CMP process for high-density DRAM cell structures |
-
1998
- 1998-04-25 KR KR1019980014851A patent/KR100270210B1/ko not_active IP Right Cessation
-
1999
- 1999-01-27 TW TW088101191A patent/TW412828B/zh active
- 1999-02-26 DE DE19908446A patent/DE19908446A1/de not_active Withdrawn
- 1999-03-05 GB GB9905192A patent/GB2336716B/en not_active Expired - Fee Related
- 1999-03-31 FR FR9904014A patent/FR2778019A1/fr not_active Withdrawn
- 1999-04-23 CN CN99105863A patent/CN1236993A/zh active Pending
- 1999-04-23 JP JP11117080A patent/JP2000022099A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2778019A1 (fr) | 1999-10-29 |
| GB9905192D0 (en) | 1999-04-28 |
| CN1236993A (zh) | 1999-12-01 |
| DE19908446A1 (de) | 1999-11-04 |
| KR19990081113A (ko) | 1999-11-15 |
| KR100270210B1 (ko) | 2000-10-16 |
| GB2336716A (en) | 1999-10-27 |
| GB2336716B (en) | 2000-11-15 |
| JP2000022099A (ja) | 2000-01-21 |
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