TW400268B - Slurry recycling system and method for CMP apparatus - Google Patents

Slurry recycling system and method for CMP apparatus Download PDF

Info

Publication number: TW400268B
Authority: TW; Taiwan
Prior art keywords: slurry; mechanical polishing; value; recovery system; colloidal
Prior art date: 1997-06-23

Application number

TW087107691A

Other languages

English (en)

Chinese (zh)

Inventor

Shinya Iida

Akitoshi Yoshida

Original Assignee

Speedfam Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-06-23

Filing date

1998-05-19

Publication date

2000-08-01

1998-05-19 Application filed by Speedfam Co Ltd filed Critical Speedfam Co Ltd

2000-08-01 Application granted granted Critical

2000-08-01 Publication of TW400268B publication Critical patent/TW400268B/zh

Links

239000002002 slurry Substances 0.000 title claims abstract description 264
238000000034 method Methods 0.000 title claims description 36
238000004064 recycling Methods 0.000 title abstract description 6
239000002245 particle Substances 0.000 claims abstract description 42
239000003002 pH adjusting agent Substances 0.000 claims abstract description 11
238000011144 upstream manufacturing Methods 0.000 claims abstract description 6
238000005498 polishing Methods 0.000 claims description 68
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
238000011084 recovery Methods 0.000 claims description 46
239000000126 substance Substances 0.000 claims description 37
239000007788 liquid Substances 0.000 claims description 35
239000000377 silicon dioxide Substances 0.000 claims description 22
239000003795 chemical substances by application Substances 0.000 claims description 21
235000012239 silicon dioxide Nutrition 0.000 claims description 20
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 17
MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 16
238000010979 pH adjustment Methods 0.000 claims description 15
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
239000000243 solution Substances 0.000 claims description 14
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
239000012535 impurity Substances 0.000 claims description 13
229910052751 metal Inorganic materials 0.000 claims description 12
239000002184 metal Substances 0.000 claims description 12
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 10
239000002253 acid Substances 0.000 claims description 9
239000000843 powder Substances 0.000 claims description 9
239000002893 slag Substances 0.000 claims description 9
AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 8
229910044991 metal oxide Inorganic materials 0.000 claims description 8
150000004706 metal oxides Chemical class 0.000 claims description 8
230000002378 acidificating effect Effects 0.000 claims description 7
150000002500 ions Chemical class 0.000 claims description 7
239000000203 mixture Substances 0.000 claims description 7
239000003960 organic solvent Substances 0.000 claims description 7
229910052735 hafnium Inorganic materials 0.000 claims description 6
VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
239000000463 material Substances 0.000 claims description 5
229910052702 rhenium Inorganic materials 0.000 claims description 5
WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 5
239000007864 aqueous solution Substances 0.000 claims description 4
238000001246 colloidal dispersion Methods 0.000 claims description 4
230000003647 oxidation Effects 0.000 claims description 4
238000007254 oxidation reaction Methods 0.000 claims description 4
239000000084 colloidal system Substances 0.000 claims description 3
239000003517 fume Substances 0.000 claims description 3
RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
239000002904 solvent Substances 0.000 claims description 3
229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
PGNYXVQROZBUOW-UHFFFAOYSA-N [O-2].[Hf+4].[Au+3] Chemical compound [O-2].[Hf+4].[Au+3] PGNYXVQROZBUOW-UHFFFAOYSA-N 0.000 claims description 2
238000004513 sizing Methods 0.000 claims 8
ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims 2
229910052776 Thorium Inorganic materials 0.000 claims 2
QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
239000008119 colloidal silica Substances 0.000 claims 2
229910052726 zirconium Inorganic materials 0.000 claims 2
239000000470 constituent Substances 0.000 claims 1
229910000449 hafnium oxide Inorganic materials 0.000 claims 1
WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
238000003306 harvesting Methods 0.000 claims 1
239000004615 ingredient Substances 0.000 claims 1
239000003921 oil Substances 0.000 claims 1
239000004408 titanium dioxide Substances 0.000 claims 1
238000001914 filtration Methods 0.000 abstract description 3
239000003082 abrasive agent Substances 0.000 abstract 1
235000012431 wafers Nutrition 0.000 description 22
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
238000003860 storage Methods 0.000 description 10
239000002699 waste material Substances 0.000 description 10
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
230000002079 cooperative effect Effects 0.000 description 7
238000011049 filling Methods 0.000 description 6
230000008859 change Effects 0.000 description 5
230000008569 process Effects 0.000 description 5
229910021529 ammonia Inorganic materials 0.000 description 4
229940075614 colloidal silicon dioxide Drugs 0.000 description 4
239000010409 thin film Substances 0.000 description 4
QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
230000009471 action Effects 0.000 description 3
238000002242 deionisation method Methods 0.000 description 3
239000010408 film Substances 0.000 description 3
238000009434 installation Methods 0.000 description 3
239000012528 membrane Substances 0.000 description 3
-1 osmium silicate ions Chemical class 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
239000002562 thickening agent Substances 0.000 description 3
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
239000000919 ceramic Substances 0.000 description 2
235000013339 cereals Nutrition 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000004744 fabric Substances 0.000 description 2
238000002309 gasification Methods 0.000 description 2
238000000227 grinding Methods 0.000 description 2
238000009413 insulation Methods 0.000 description 2
229910052762 osmium Inorganic materials 0.000 description 2
238000004537 pulping Methods 0.000 description 2
239000011347 resin Substances 0.000 description 2
229920005989 resin Polymers 0.000 description 2
238000012360 testing method Methods 0.000 description 2
230000007704 transition Effects 0.000 description 2
NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
WHBHBVVOGNECLV-OBQKJFGGSA-N 11-deoxycortisol Chemical compound O=C1CC[C@]2(C)[C@H]3CC[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 WHBHBVVOGNECLV-OBQKJFGGSA-N 0.000 description 1
KYARBIJYVGJZLB-UHFFFAOYSA-N 7-amino-4-hydroxy-2-naphthalenesulfonic acid Chemical compound OC1=CC(S(O)(=O)=O)=CC2=CC(N)=CC=C21 KYARBIJYVGJZLB-UHFFFAOYSA-N 0.000 description 1
241000478345 Afer Species 0.000 description 1
VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
101000905241 Mus musculus Heart- and neural crest derivatives-expressed protein 1 Proteins 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
MOKOTFSFGJIJQM-UHFFFAOYSA-N O=[Au]=O Chemical compound O=[Au]=O MOKOTFSFGJIJQM-UHFFFAOYSA-N 0.000 description 1
240000007594 Oryza sativa Species 0.000 description 1
235000007164 Oryza sativa Nutrition 0.000 description 1
244000299461 Theobroma cacao Species 0.000 description 1
235000009470 Theobroma cacao Nutrition 0.000 description 1
239000003513 alkali Substances 0.000 description 1
239000012670 alkaline solution Substances 0.000 description 1
150000001412 amines Chemical class 0.000 description 1
239000000908 ammonium hydroxide Substances 0.000 description 1
230000033228 biological regulation Effects 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000005034 decoration Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000007123 defense Effects 0.000 description 1
238000000151 deposition Methods 0.000 description 1
239000006185 dispersion Substances 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000013505 freshwater Substances 0.000 description 1
239000007789 gas Substances 0.000 description 1
239000012213 gelatinous substance Substances 0.000 description 1
238000005342 ion exchange Methods 0.000 description 1
239000003456 ion exchange resin Substances 0.000 description 1
229920003303 ion-exchange polymer Polymers 0.000 description 1
239000006193 liquid solution Substances 0.000 description 1
235000012054 meals Nutrition 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
230000003472 neutralizing effect Effects 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
229910000069 nitrogen hydride Inorganic materials 0.000 description 1
239000004745 nonwoven fabric Substances 0.000 description 1
SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
238000006213 oxygenation reaction Methods 0.000 description 1
238000004806 packaging method and process Methods 0.000 description 1
238000005554 pickling Methods 0.000 description 1
239000013612 plasmid Substances 0.000 description 1
239000004033 plastic Substances 0.000 description 1
238000007517 polishing process Methods 0.000 description 1
239000011148 porous material Substances 0.000 description 1
238000004382 potting Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
235000009566 rice Nutrition 0.000 description 1
239000004576 sand Substances 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000000779 smoke Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
238000003756 stirring Methods 0.000 description 1
239000006188 syrup Substances 0.000 description 1
235000020357 syrup Nutrition 0.000 description 1

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

Engineering & Computer Science (AREA)
Mechanical Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

TW087107691A 1997-06-23 1998-05-19 Slurry recycling system and method for CMP apparatus TW400268B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP18307397A JPH1110540A (ja)	1997-06-23	1997-06-23	Ｃｍｐ装置のスラリリサイクルシステム及びその方法

Publications (1)

Publication Number	Publication Date
TW400268B true TW400268B (en)	2000-08-01

Family

ID=16129286

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW087107691A TW400268B (en)	1997-06-23	1998-05-19	Slurry recycling system and method for CMP apparatus

Country Status (4)

Country	Link
US (1)	US6106728A (ja)
JP (1)	JPH1110540A (ja)
KR (1)	KR19990007187A (ja)
TW (1)	TW400268B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN103733314A (zh) *	2011-09-01	2014-04-16	信越半导体株式会社	硅晶片的研磨方法及研磨剂

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6315906B1 (en) *	1998-07-10	2001-11-13	United States Filter Corporation	Removing metal ions from wastewater
US6346195B1 (en) *	1998-07-10	2002-02-12	U.S. Filter Corporation	Ion exchange removal of metal ions from wastewater
JP4113288B2 (ja) *	1998-09-04	2008-07-09	スピードファム株式会社	研磨用組成物およびそれを用いたシリコンウェーハの加工方法
JP2000080350A (ja)	1998-09-07	2000-03-21	Speedfam-Ipec Co Ltd	研磨用組成物及びそれによるポリッシング加工方法
US6250994B1 (en) *	1998-10-01	2001-06-26	Micron Technology, Inc.	Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads
KR100447987B1 (ko) *	1998-10-27	2004-11-09	주식회사 하이닉스반도체	화학기계적연마공정용슬러리공급장치
JP2000198062A (ja) *	1998-11-04	2000-07-18	Canon Inc	研磨装置及び研磨方法
JP3538042B2 (ja) *	1998-11-24	2004-06-14	松下電器産業株式会社	スラリー供給装置及びスラリー供給方法
US6280300B1 (en) *	1998-11-25	2001-08-28	Ebara Corporation	Filter apparatus
JP3426149B2 (ja) *	1998-12-25	2003-07-14	富士通株式会社	半導体製造における研磨廃液再利用方法及び再利用装置
JP2000237952A (ja) *	1999-02-19	2000-09-05	Hitachi Ltd	研磨装置および半導体装置の製造方法
US6599836B1 (en) *	1999-04-09	2003-07-29	Micron Technology, Inc.	Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6407000B1 (en) *	1999-04-09	2002-06-18	Micron Technology, Inc.	Method and apparatuses for making and using bi-modal abrasive slurries for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
JP3708748B2 (ja)	1999-04-23	2005-10-19	松下電器産業株式会社	研磨剤の再生装置および研磨剤の再生方法
JP4759779B2 (ja) *	1999-09-09	2011-08-31	日立化成工業株式会社	基板の研磨方法
US6203412B1 (en) *	1999-11-19	2001-03-20	Chartered Semiconductor Manufacturing Ltd.	Submerge chemical-mechanical polishing
JP3778747B2 (ja) *	1999-11-29	2006-05-24	株式会社荏原製作所	砥液供給装置
US6287172B1 (en) *	1999-12-17	2001-09-11	Taiwan Semiconductor Manufacturing Co., Ltd.	Method for improvement of tungsten chemical-mechanical polishing process
US6402599B1 (en) *	2000-05-03	2002-06-11	Agere Systems Guardian Corp.	Slurry recirculation system for reduced slurry drying
US6267641B1 (en) *	2000-05-19	2001-07-31	Motorola, Inc.	Method of manufacturing a semiconductor component and chemical-mechanical polishing system therefor
US6294472B1 (en) *	2000-05-23	2001-09-25	Advanced Micro Devices, Inc.	Dual slurry particle sizes for reducing microscratching of wafers
KR20020003704A (ko) *	2000-06-27	2002-01-15	장정훈	씨엠피 장치의 슬러리 재생모듈
WO2002001618A1 (en) *	2000-06-27	2002-01-03	Nymtech Co., Ltd.	Slurry recycling system and method for cmp apparatus
KR20020003939A (ko) *	2000-06-27	2002-01-16	장정훈	씨엠피 장치의 슬러리 재생 시스템
US6623329B1 (en) *	2000-08-31	2003-09-23	Micron Technology, Inc.	Method and apparatus for supporting a microelectronic substrate relative to a planarization pad
US6558238B1 (en) *	2000-09-19	2003-05-06	Agere Systems Inc.	Apparatus and method for reclamation of used polishing slurry
JP3789296B2 (ja) *	2000-11-17	2006-06-21	リオン株式会社	研磨液の製造装置
US6709313B2 (en) *	2000-11-17	2004-03-23	Rion Co., Ltd.	Apparatus for producing polishing solution and apparatus for feeding the same
US6896776B2 (en)	2000-12-18	2005-05-24	Applied Materials Inc.	Method and apparatus for electro-chemical processing
US6572460B2 (en) *	2001-01-31	2003-06-03	Nidek Co., Ltd.	Tank unit for grinding water used in processing eyeglass lens, and eyeglass lens processing apparatus having the same
US6623331B2 (en)	2001-02-16	2003-09-23	Cabot Microelectronics Corporation	Polishing disk with end-point detection port
US7232514B2 (en) *	2001-03-14	2007-06-19	Applied Materials, Inc.	Method and composition for polishing a substrate
US7323416B2 (en)	2001-03-14	2008-01-29	Applied Materials, Inc.	Method and composition for polishing a substrate
US7582564B2 (en)	2001-03-14	2009-09-01	Applied Materials, Inc.	Process and composition for conductive material removal by electrochemical mechanical polishing
US6811680B2 (en) *	2001-03-14	2004-11-02	Applied Materials Inc.	Planarization of substrates using electrochemical mechanical polishing
US7160432B2 (en) *	2001-03-14	2007-01-09	Applied Materials, Inc.	Method and composition for polishing a substrate
US6899804B2 (en) *	2001-12-21	2005-05-31	Applied Materials, Inc.	Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7128825B2 (en) *	2001-03-14	2006-10-31	Applied Materials, Inc.	Method and composition for polishing a substrate
US6398627B1 (en) *	2001-03-22	2002-06-04	Taiwan Semiconductor Manufacturing Co., Ltd.	Slurry dispenser having multiple adjustable nozzles
US7059943B2 (en)	2001-06-28	2006-06-13	Seh America, Inc.	Method and apparatus for recycling slurry
US7601643B1 (en) *	2001-08-30	2009-10-13	Lsi Logic Corporation	Arrangement and method for fabricating a semiconductor wafer
US20030211747A1 (en) *	2001-09-13	2003-11-13	Nyacol Nano Technologies, Inc	Shallow trench isolation polishing using mixed abrasive slurries
US6458020B1 (en) *	2001-11-16	2002-10-01	International Business Machines Corporation	Slurry recirculation in chemical mechanical polishing
JP2003205463A (ja) *	2002-01-11	2003-07-22	Tokyo Seimitsu Co Ltd	Ｃｍｐ研磨装置における研磨剤の調合装置及び調合方法
US20030190426A1 (en) *	2002-04-03	2003-10-09	Deenesh Padhi	Electroless deposition method
JP2004075859A (ja) *	2002-08-19	2004-03-11	Chubu Kiresuto Kk	研磨スラリーの清浄化法
JP4397153B2 (ja) *	2002-08-30	2010-01-13	株式会社ニデック	研削水タンク装置
KR101088594B1 (ko) *	2003-03-18	2011-12-06	노무라마이크로사이엔스가부시키가이샤	반도체 연마 슬러리 정제용 소재, 반도체 연마 슬러리 정제용 모듈 및 반도체 연마 슬러리의 정제 방법
US6929532B1 (en) *	2003-05-08	2005-08-16	Lsi Logic Corporation	Method and apparatus for filtering a chemical polishing slurry of a wafer fabrication process
US7390429B2 (en)	2003-06-06	2008-06-24	Applied Materials, Inc.	Method and composition for electrochemical mechanical polishing processing
US6984166B2 (en) *	2003-08-01	2006-01-10	Chartered Semiconductor Manufacturing Ltd.	Zone polishing using variable slurry solid content
JP4026573B2 (ja) *	2003-09-24	2007-12-26	株式会社デンソー	電子装置を収納するパッケージの製造方法
US20050092620A1 (en) *	2003-10-01	2005-05-05	Applied Materials, Inc.	Methods and apparatus for polishing a substrate
US20060003570A1 (en) *	2003-12-02	2006-01-05	Arulkumar Shanmugasundram	Method and apparatus for electroless capping with vapor drying
US7390744B2 (en)	2004-01-29	2008-06-24	Applied Materials, Inc.	Method and composition for polishing a substrate
TWI235425B (en) *	2004-05-26	2005-07-01	Promos Technologies Inc	Etching system and method for treating the etching solution thereof
JP2006099943A (ja) *	2004-08-30	2006-04-13	Showa Denko Kk	磁気ディスク用基板および磁気ディスクの製造方法
JP2006165104A (ja) *	2004-12-03	2006-06-22	Toshiro Doi	化学的機械研磨方法並びに装置、及び、化学的機械研磨加工におけるスラリー再生方法並びに装置
US7488423B2 (en) *	2005-08-02	2009-02-10	Siemens Water Technologies Holding Corp.	System and method of slurry treatment
JP2007063374A (ja) *	2005-08-30	2007-03-15	Nitta Haas Inc	研磨組成物用添加剤
US7427227B2 (en) *	2005-08-30	2008-09-23	Denso Corporation	Method and apparatus for fluid polishing
US20070151866A1 (en) *	2006-01-05	2007-07-05	Applied Materials, Inc.	Substrate polishing with surface pretreatment
US20090274596A1 (en) *	2006-02-24	2009-11-05	Ihi Compressor And Machinery Co., Ltd.	Method and apparatus for processing silicon particles
JP2007319974A (ja) *	2006-05-31	2007-12-13	Nomura Micro Sci Co Ltd	半導体研磨用スラリーの回収方法及び回収システム並びに再生方法及び再生システム
TWI417430B (zh) *	2006-08-25	2013-12-01	Applied Materials Inc	基板研磨液之使用點處理方法與系統
EP2056946A4 (en) *	2006-08-28	2010-03-31	Siemens Water Tech Corp	SYSTEM AND METHOD FOR SLUDGE TREATMENT
US7651384B2 (en) *	2007-01-09	2010-01-26	Applied Materials, Inc.	Method and system for point of use recycling of ECMP fluids
US7820051B2 (en) *	2007-02-23	2010-10-26	International Business Machines Corporation	Recycling of electrochemical-mechanical planarization (ECMP) slurries/electrolytes
JP5148948B2 (ja) *	2007-08-23	2013-02-20	ＳｕｍｃｏＴｅｃｈｘｉｖ株式会社	研磨用スラリーのリサイクル方法
US8652350B2 (en)	2008-02-27	2014-02-18	Jsr Corporation	Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion
KR100985861B1 (ko) *	2008-09-24	2010-10-08	씨앤지하이테크 주식회사	반도체용 슬러리 공급장치 및 슬러리 공급방법
US20100144245A1 (en) *	2008-12-05	2010-06-10	Shei-Kai Chang	Methods and apparatus for chemical-mechanical polishing utilizing low suspended solids polishing compositions
JP2010167551A (ja)	2008-12-26	2010-08-05	Nomura Micro Sci Co Ltd	使用済みスラリーの再生方法
CN102365716A (zh) *	2009-03-25	2012-02-29	应用材料公司	化学机械研磨(cmp)浆料的使用点回收***
US20110070811A1 (en) *	2009-03-25	2011-03-24	Applied Materials, Inc.	Point of use recycling system for cmp slurry
JP5358266B2 (ja) *	2009-04-24	2013-12-04	野村マイクロ・サイエンス株式会社	排スラリー中の有用固形成分の回収方法
JP5461918B2 (ja) *	2009-08-19	2014-04-02	株式会社ディスコ	加工廃液処理装置
DE102009044204A1 (de)	2009-10-08	2011-04-28	Fab Service Gmbh	Wiederaufbereitungsverfahren und Wiederaufbereitungsvorrichtung zur Wiederaufbereitung von Slurry-Abwasser aus einem Halbleiterbearbeitungs-prozess, insbesondere aus einem chemisch-mechanischen Polierprozess
US20110177623A1 (en) *	2010-01-15	2011-07-21	Confluense Llc	Active Tribology Management of CMP Polishing Material
US8557134B2 (en) *	2010-01-28	2013-10-15	Environmental Process Solutions, Inc.	Accurately monitored CMP recycling
WO2011121906A1 (ja) *	2010-03-31	2011-10-06	コニカミノルタオプト株式会社	情報記録媒体用ガラス基板の製造方法及び情報記録媒体用ガラス基板
US20120042575A1 (en) *	2010-08-18	2012-02-23	Cabot Microelectronics Corporation	Cmp slurry recycling system and methods
US8696404B2 (en)	2011-12-21	2014-04-15	WD Media, LLC	Systems for recycling slurry materials during polishing processes
KR20140102697A (ko) *	2011-12-22	2014-08-22	코니카 미놀타 가부시키가이샤	연마재 재생 방법 및 재생 연마재
JP6044551B2 (ja) *	2011-12-27	2016-12-14	コニカミノルタ株式会社	研磨材分離方法
US9259668B2 (en) *	2012-02-17	2016-02-16	Jsr Corporation	Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
JP6302708B2 (ja) *	2013-03-29	2018-03-28	芝浦メカトロニクス株式会社	ウェットエッチング装置
CN103264352A (zh) *	2013-04-26	2013-08-28	中国科学院上海光学精密机械研究所	大型环抛机的抛光液循环过滤注液装置
CN105313015B (zh) *	2014-07-29	2019-08-16	盛美半导体设备（上海）有限公司	抛光液过滤装置
US10688623B2 (en) *	2014-09-30	2020-06-23	Taiwan Semiconductor Manufacturing Co., Ltd.	Slurry dispersion system with real time control
JP6206388B2 (ja) *	2014-12-15	2017-10-04	信越半導体株式会社	シリコンウェーハの研磨方法
JP6654457B2 (ja) *	2016-02-10	2020-02-26	株式会社荏原製作所	基板処理装置用排水システム、排水方法及び排水制御装置並びに記録媒体
US11318577B2 (en) *	2016-06-16	2022-05-03	Texas Instruments Incorporated	System and method of delivering slurry for chemical mechanical polishing
US11642754B2 (en) *	2018-08-30	2023-05-09	Taiwan Semiconductor Manufacturing Co., Ltd.	Slurry recycling for chemical mechanical polishing system
KR102684327B1 (ko) *	2022-02-10	2024-07-11	에스케이실트론 주식회사	연마용 슬러리 회수장치 및 그 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0340537A (ja) *	1989-07-07	1991-02-21	Canon Inc	ネットワークシステム
JP3277427B2 (ja) *	1994-01-31	2002-04-22	ソニー株式会社	平坦化方法および研磨装置
JPH07316846A (ja) *	1994-05-27	1995-12-05	Asahi Chem Ind Co Ltd	ケミカルメカニカルポリッシング液の再生方法
JP3438410B2 (ja) *	1995-05-26	2003-08-18	ソニー株式会社	化学機械研磨用スラリーおよびその製造方法ならびにこれを用いた研磨方法
US5664990A (en) *	1996-07-29	1997-09-09	Integrated Process Equipment Corp.	Slurry recycling in CMP apparatus
US5932486A (en) *	1996-08-16	1999-08-03	Rodel, Inc.	Apparatus and methods for recirculating chemical-mechanical polishing of semiconductor wafers

1997
- 1997-06-23 JP JP18307397A patent/JPH1110540A/ja active Pending
1998
- 1998-05-19 TW TW087107691A patent/TW400268B/zh not_active IP Right Cessation
- 1998-06-22 KR KR1019980023325A patent/KR19990007187A/ko not_active Application Discontinuation
- 1998-06-23 US US09/103,653 patent/US6106728A/en not_active Expired - Fee Related

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN103733314A (zh) *	2011-09-01	2014-04-16	信越半导体株式会社	硅晶片的研磨方法及研磨剂
CN103733314B (zh) *	2011-09-01	2016-05-04	信越半导体株式会社	硅晶片的研磨方法及研磨剂

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KR19990007187A (ko)	1999-01-25
JPH1110540A (ja)	1999-01-19
US6106728A (en)	2000-08-22

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Publication	Publication Date	Title
TW400268B (en)	2000-08-01	Slurry recycling system and method for CMP apparatus
US6544307B2 (en)	2003-04-08	Polishing composition and manufacturing and polishing methods
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US20020022441A1 (en)	2002-02-21	Slurry supply apparatus and method
JP2000031100A (ja)	2000-01-28	半導体ｃｍｐ工程のスラリ供給システム
TW392248B (en)	2000-06-01	Supply system for chemicals and its use
US5935869A (en)	1999-08-10	Method of planarizing semiconductor wafers
US8662963B2 (en)	2014-03-04	Chemical mechanical polishing system
JP2008028232A (ja)	2008-02-07	半導体基板研磨装置および半導体基板研磨方法、半導体装置の製造方法
JP2971714B2 (ja)	1999-11-08	半導体基板の鏡面研磨方法
JPH0475338A (ja)	1992-03-10	機械・化学研磨法
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