TW376555B - A power source device for a sputtering apparatus - Google Patents

A power source device for a sputtering apparatus

Info

Publication number
TW376555B
TW376555B TW087102433A TW87102433A TW376555B TW 376555 B TW376555 B TW 376555B TW 087102433 A TW087102433 A TW 087102433A TW 87102433 A TW87102433 A TW 87102433A TW 376555 B TW376555 B TW 376555B
Authority
TW
Taiwan
Prior art keywords
electric arc
reverse voltage
arc discharge
externally
added externally
Prior art date
Application number
TW087102433A
Other languages
English (en)
Inventor
Noboru Kuriyama
Yutaka Yatsu
Yoshio Kawamata
Takashi Fujii
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Application granted granted Critical
Publication of TW376555B publication Critical patent/TW376555B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Disintegrating Or Milling (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Dc-Dc Converters (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW087102433A 1997-02-20 1998-02-20 A power source device for a sputtering apparatus TW376555B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3624897 1997-02-20

Publications (1)

Publication Number Publication Date
TW376555B true TW376555B (en) 1999-12-11

Family

ID=12464484

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087102433A TW376555B (en) 1997-02-20 1998-02-20 A power source device for a sputtering apparatus

Country Status (8)

Country Link
US (1) US6416638B1 (zh)
EP (1) EP1013792B1 (zh)
KR (1) KR100314883B1 (zh)
CN (1) CN1203208C (zh)
AT (1) ATE468420T1 (zh)
DE (1) DE69841671D1 (zh)
TW (1) TW376555B (zh)
WO (1) WO1998037257A1 (zh)

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DE19937859C2 (de) * 1999-08-13 2003-06-18 Huettinger Elektronik Gmbh Elektrische Versorgungseinheit für Plasmaanlagen
JP4272522B2 (ja) * 2001-09-28 2009-06-03 芝浦メカトロニクス株式会社 スパッタリング用電源装置
WO2003103348A1 (ja) * 2002-05-31 2003-12-11 芝浦メカトロニクス株式会社 放電用電源、スパッタリング用電源及びスパッタリング装置
US6967305B2 (en) * 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
DE102004015090A1 (de) 2004-03-25 2005-11-03 Hüttinger Elektronik Gmbh + Co. Kg Bogenentladungserkennungseinrichtung
US7305311B2 (en) * 2005-04-22 2007-12-04 Advanced Energy Industries, Inc. Arc detection and handling in radio frequency power applications
US20060283702A1 (en) * 2005-06-21 2006-12-21 Applied Materials, Inc. Random pulsed DC power supply
US20070048451A1 (en) * 2005-08-26 2007-03-01 Applied Materials, Inc. Substrate movement and process chamber scheduling
US7432184B2 (en) * 2005-08-26 2008-10-07 Applied Materials, Inc. Integrated PVD system using designated PVD chambers
ES2321309T3 (es) * 2005-12-22 2009-06-04 Huttinger Elektronik Gmbh + Co. Kg Procedimiento y dispositivo para deteccion de un arco.
ATE448562T1 (de) * 2006-11-23 2009-11-15 Huettinger Elektronik Gmbh Verfahren zum erkennen einer bogenentladung in einem plasmaprozess und bogenentladungserkennungsvorrichtung
US7795817B2 (en) * 2006-11-24 2010-09-14 Huettinger Elektronik Gmbh + Co. Kg Controlled plasma power supply
EP1928009B1 (de) * 2006-11-28 2013-04-10 HÜTTINGER Elektronik GmbH + Co. KG Bogenentladungs-Erkennungseinrichtung, Plasma-Leistungsversorgung und Verfahren zum Erkennen von Bogenentladungen
DE502006009308D1 (de) * 2006-12-14 2011-05-26 Huettinger Elektronik Gmbh Bogenentladungs-Erkennungseinrichtung, Plasma-Leistungsversorgung und Verfahren zum Erkennen von Bogenentladungen
US8217299B2 (en) * 2007-02-22 2012-07-10 Advanced Energy Industries, Inc. Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
DE102007011230A1 (de) * 2007-03-06 2008-09-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Magnetronplasmaanlage
EP1978542B1 (de) 2007-03-08 2010-12-29 HÜTTINGER Elektronik GmbH + Co. KG Verfahren und Vorrichtung zum Unterdrücken von Bogenentladungen beim Betreiben eines Plasmaprozesses
EP1995818A1 (en) 2007-05-12 2008-11-26 Huettinger Electronic Sp. z o. o Circuit and method for reducing electrical energy stored in a lead inductance for fast extinction of plasma arcs
ATE547804T1 (de) * 2007-12-24 2012-03-15 Huettinger Electronic Sp Z O O Stromänderungsbegrenzungsvorrichtung
US9613784B2 (en) * 2008-07-17 2017-04-04 Mks Instruments, Inc. Sputtering system and method including an arc detection
US8044594B2 (en) * 2008-07-31 2011-10-25 Advanced Energy Industries, Inc. Power supply ignition system and method
US20110236591A1 (en) * 2008-11-28 2011-09-29 General Plasma Inc. Bipolar rectifier power supply
US8395078B2 (en) 2008-12-05 2013-03-12 Advanced Energy Industries, Inc Arc recovery with over-voltage protection for plasma-chamber power supplies
EP2219205B1 (en) * 2009-02-17 2014-06-04 Solvix GmbH A power supply device for plasma processing
DE102010031568B4 (de) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung und Verfahren zum Löschen von Arcs
CN103069928B (zh) * 2010-08-18 2015-03-25 株式会社爱发科 直流电源装置
US8552665B2 (en) 2010-08-20 2013-10-08 Advanced Energy Industries, Inc. Proactive arc management of a plasma load
US20160215386A1 (en) * 2013-09-09 2016-07-28 Itn Energy Systems, Inc. Modulation of reverse voltage limited waveforms in sputtering deposition chambers
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
CN109792146B (zh) * 2016-09-30 2019-11-26 株式会社爱发科 电源装置
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
JP7320608B2 (ja) * 2019-01-08 2023-08-03 イーグル ハーバー テクノロジーズ，インク． ナノ秒パルサー回路での効率的なエネルギー回収
US20230130106A1 (en) * 2021-10-27 2023-04-27 Applied Materials, Inc. Methods and apparatus for processing a substrate

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201645A (en) * 1978-06-26 1980-05-06 Robert J. Ferran Closed-loop sputtering system and method of operating same
JPH02194831A (ja) 1989-01-23 1990-08-01 Ishikawajima Harima Heavy Ind Co Ltd 直流放電用電源
US5241152A (en) * 1990-03-23 1993-08-31 Anderson Glen L Circuit for detecting and diverting an electrical arc in a glow discharge apparatus
DE9109503U1 (de) * 1991-07-31 1991-10-17 Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik
DE4202425C2 (de) * 1992-01-29 1997-07-17 Leybold Ag Verfahren und Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
JPH05311418A (ja) 1992-05-12 1993-11-22 Shibaura Eng Works Co Ltd アーク放電防止回路
US5718813A (en) 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5427669A (en) * 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
SG46607A1 (en) * 1993-07-28 1998-02-20 Asahi Glass Co Ltd Method of an apparatus for sputtering
JP3191135B2 (ja) 1994-02-23 2001-07-23 日本電子工業株式会社 直流グロー放電処理装置におけるアーク遮断方法及び装置
US5651865A (en) 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5584972A (en) * 1995-02-01 1996-12-17 Sony Corporation Plasma noise and arcing suppressor apparatus and method for sputter deposition
US5576939A (en) 1995-05-05 1996-11-19 Drummond; Geoffrey N. Enhanced thin film DC plasma power supply
US5584974A (en) 1995-10-20 1996-12-17 Eni Arc control and switching element protection for pulsed dc cathode sputtering power supply
US5682067A (en) * 1996-06-21 1997-10-28 Sierra Applied Sciences, Inc. Circuit for reversing polarity on electrodes
JP2835323B2 (ja) 1997-02-20 1998-12-14 芝浦メカトロニクス株式会社 スパッタリング装置用電源装置

Also Published As

Publication number Publication date
ATE468420T1 (de) 2010-06-15
EP1013792B1 (en) 2010-05-19
KR20000071147A (ko) 2000-11-25
CN1203208C (zh) 2005-05-25
WO1998037257A1 (fr) 1998-08-27
EP1013792A1 (en) 2000-06-28
US6416638B1 (en) 2002-07-09
DE69841671D1 (de) 2010-07-01
KR100314883B1 (ko) 2001-11-23
EP1013792A4 (en) 2006-02-15
CN1248299A (zh) 2000-03-22

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees