TW369730B - Semiconductor luminescence element - Google Patents

Semiconductor luminescence element

Info

Publication number
TW369730B
TW369730B TW087104024A TW87104024A TW369730B TW 369730 B TW369730 B TW 369730B TW 087104024 A TW087104024 A TW 087104024A TW 87104024 A TW87104024 A TW 87104024A TW 369730 B TW369730 B TW 369730B
Authority
TW
Taiwan
Prior art keywords
electrode
luminescence element
current block
semiconductor
transmittance
Prior art date
Application number
TW087104024A
Other languages
English (en)
Inventor
Toshio Hata
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Application granted granted Critical
Publication of TW369730B publication Critical patent/TW369730B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW087104024A 1997-03-19 1998-03-18 Semiconductor luminescence element TW369730B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6572797 1997-03-19

Publications (1)

Publication Number Publication Date
TW369730B true TW369730B (en) 1999-09-11

Family

ID=13295351

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087104024A TW369730B (en) 1997-03-19 1998-03-18 Semiconductor luminescence element

Country Status (6)

Country Link
US (1) US6417525B1 (zh)
JP (1) JP3940438B2 (zh)
KR (1) KR100434242B1 (zh)
CN (1) CN1147009C (zh)
TW (1) TW369730B (zh)
WO (1) WO1998042030A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451552B (zh) * 2009-11-10 2014-09-01 Taiwan Semiconductor Mfg 積體電路結構

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TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
JP3285341B2 (ja) 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP4816990B2 (ja) * 2000-08-21 2011-11-16 ソニー株式会社 発光素子および半導体素子ならびにそれらの製造方法
JP3466144B2 (ja) 2000-09-22 2003-11-10 士郎 酒井 半導体の表面を荒くする方法
JP2002164570A (ja) * 2000-11-24 2002-06-07 Shiro Sakai 窒化ガリウム系化合物半導体装置
JP3548735B2 (ja) 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
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US20030132433A1 (en) * 2002-01-15 2003-07-17 Piner Edwin L. Semiconductor structures including a gallium nitride material component and a silicon germanium component
US6730941B2 (en) * 2002-01-30 2004-05-04 Showa Denko Kabushiki Kaisha Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode
US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US7005685B2 (en) 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
JP4233268B2 (ja) 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US20030222263A1 (en) * 2002-06-04 2003-12-04 Kopin Corporation High-efficiency light-emitting diodes
US20040000672A1 (en) * 2002-06-28 2004-01-01 Kopin Corporation High-power light-emitting diode structures
US6955985B2 (en) * 2002-06-28 2005-10-18 Kopin Corporation Domain epitaxy for thin film growth
CN100595938C (zh) 2002-08-01 2010-03-24 日亚化学工业株式会社 半导体发光元件及其制造方法、使用此的发光装置
US7122841B2 (en) 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
US20050179046A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation P-type electrodes in gallium nitride-based light-emitting devices
US20050179042A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices
US7358544B2 (en) * 2004-03-31 2008-04-15 Nichia Corporation Nitride semiconductor light emitting device
TWI374552B (en) * 2004-07-27 2012-10-11 Cree Inc Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
JP2008053685A (ja) * 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
US7951693B2 (en) * 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
CN102779918B (zh) 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
JP2008218440A (ja) * 2007-02-09 2008-09-18 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP2008244425A (ja) * 2007-02-21 2008-10-09 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
TWI493748B (zh) * 2008-08-29 2015-07-21 Nichia Corp Semiconductor light emitting elements and semiconductor light emitting devices
CN102054912A (zh) * 2009-11-04 2011-05-11 大连路美芯片科技有限公司 一种发光二极管及其制造方法
KR101091504B1 (ko) * 2010-02-12 2011-12-08 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 발광소자 제조방법
KR101182920B1 (ko) * 2010-07-05 2012-09-13 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR102399278B1 (ko) * 2014-12-31 2022-05-19 서울바이오시스 주식회사 발광 다이오드
KR101182919B1 (ko) 2010-12-21 2012-09-13 엘지이노텍 주식회사 발광소자
CN103283045B (zh) * 2010-12-28 2016-08-17 首尔伟傲世有限公司 高效发光二极管
JP2012186199A (ja) * 2011-03-03 2012-09-27 Toshiba Corp 半導体発光装置およびその製造方法
JP5992174B2 (ja) * 2011-03-31 2016-09-14 シャープ株式会社 窒化物半導体発光素子およびその製造方法
KR101209163B1 (ko) 2011-04-19 2012-12-06 주식회사 세미콘라이트 반도체 발광소자
WO2013051326A1 (ja) * 2011-10-05 2013-04-11 シャープ株式会社 窒化物半導体発光素子、及び窒化物半導体発光素子の製造方法
CN103117338A (zh) * 2013-03-04 2013-05-22 中国科学院半导体研究所 低损伤GaN基LED芯片的制作方法
CN103489966B (zh) * 2013-08-29 2015-10-28 刘晶 一种led芯片电极的制作方法、led芯片及led
CN103515504A (zh) * 2013-10-23 2014-01-15 扬州中科半导体照明有限公司 一种led芯片及其加工工艺
KR102255214B1 (ko) * 2014-11-13 2021-05-24 삼성전자주식회사 발광 소자
DE102015102857A1 (de) 2015-02-27 2016-09-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zur Herstellung eines elektrischen Kontakts und Verfahren zur Herstellung eines Halbleiterbauelements
CN104993024A (zh) * 2015-06-19 2015-10-21 圆融光电科技股份有限公司 发光二极管芯片及其制作方法和封装方法
DE102015111301B4 (de) * 2015-07-13 2022-11-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
CN108183153A (zh) * 2017-12-28 2018-06-19 聚灿光电科技股份有限公司 Led芯片的制备方法
CN211125682U (zh) * 2019-12-23 2020-07-28 厦门三安光电有限公司 一种正装发光二极管芯片
CN112086544A (zh) * 2020-09-25 2020-12-15 厦门三安光电有限公司 半导体发光元件和发光装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2748818B2 (ja) 1993-05-31 1998-05-13 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
JP3841460B2 (ja) 1995-03-13 2006-11-01 豊田合成株式会社 半導体光素子
JPH08250768A (ja) * 1995-03-13 1996-09-27 Toyoda Gosei Co Ltd 半導体光素子
JP3165374B2 (ja) 1995-08-31 2001-05-14 株式会社東芝 化合物半導体の電極の形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451552B (zh) * 2009-11-10 2014-09-01 Taiwan Semiconductor Mfg 積體電路結構

Also Published As

Publication number Publication date
US6417525B1 (en) 2002-07-09
KR20000076416A (ko) 2000-12-26
WO1998042030A1 (fr) 1998-09-24
CN1250546A (zh) 2000-04-12
JP3940438B2 (ja) 2007-07-04
CN1147009C (zh) 2004-04-21
KR100434242B1 (ko) 2004-06-04

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees