TW366561B - Manufacturing method of plug for semiconductor components - Google Patents
Manufacturing method of plug for semiconductor components Download PDFInfo
- Publication number
- TW366561B TW366561B TW086108330A TW86108330A TW366561B TW 366561 B TW366561 B TW 366561B TW 086108330 A TW086108330 A TW 086108330A TW 86108330 A TW86108330 A TW 86108330A TW 366561 B TW366561 B TW 366561B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- halogenated
- carbon atoms
- chain
- propyl
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- -1 3-fluoro-n-propyl Chemical group 0.000 claims description 33
- 125000003545 alkoxy group Chemical group 0.000 claims description 29
- 125000004429 atom Chemical group 0.000 claims description 26
- 125000004432 carbon atom Chemical group C* 0.000 claims description 18
- 125000004414 alkyl thio group Chemical group 0.000 claims description 17
- 125000000217 alkyl group Chemical group 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 16
- 125000005843 halogen group Chemical group 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 125000004354 sulfur functional group Chemical group 0.000 claims description 5
- 125000003342 alkenyl group Chemical group 0.000 claims description 4
- 125000006656 (C2-C4) alkenyl group Chemical group 0.000 claims description 3
- 125000000304 alkynyl group Chemical group 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 8
- 125000004975 3-butenyl group Chemical group C(CC=C)* 0.000 claims 2
- 241000283074 Equus asinus Species 0.000 claims 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 2
- 125000006274 (C1-C3)alkoxy group Chemical group 0.000 claims 1
- FKTXDTWDCPTPHK-UHFFFAOYSA-N 1,1,1,2,3,3,3-heptafluoropropane Chemical group FC(F)(F)[C](F)C(F)(F)F FKTXDTWDCPTPHK-UHFFFAOYSA-N 0.000 claims 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 claims 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 claims 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 claims 1
- 125000005233 alkylalcohol group Chemical group 0.000 claims 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 claims 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 claims 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 claims 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 claims 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical group CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims 1
- 125000006341 heptafluoro n-propyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)* 0.000 claims 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 claims 1
- 125000006344 nonafluoro n-butyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 claims 1
- 125000005246 nonafluorobutyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 claims 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 claims 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 claims 1
- 150000003254 radicals Chemical class 0.000 claims 1
- 230000028327 secretion Effects 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract 6
- 229910052751 metal Inorganic materials 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 16
- 125000001424 substituent group Chemical group 0.000 description 12
- 125000004390 alkyl sulfonyl group Chemical group 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000002917 insecticide Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 description 6
- 125000004644 alkyl sulfinyl group Chemical group 0.000 description 5
- 239000012620 biological material Substances 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 3
- 125000006650 (C2-C4) alkynyl group Chemical group 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- 241000238631 Hexapoda Species 0.000 description 3
- 239000004480 active ingredient Substances 0.000 description 3
- 125000004093 cyano group Chemical group *C#N 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 3
- 125000006552 (C3-C8) cycloalkyl group Chemical group 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- OWIKHYCFFJSOEH-UHFFFAOYSA-N Isocyanic acid Chemical group N=C=O OWIKHYCFFJSOEH-UHFFFAOYSA-N 0.000 description 2
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 2
- 125000003282 alkyl amino group Chemical group 0.000 description 2
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 2
- 125000005196 alkyl carbonyloxy group Chemical group 0.000 description 2
- 125000005278 alkyl sulfonyloxy group Chemical group 0.000 description 2
- 125000005279 aryl sulfonyloxy group Chemical group 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 description 1
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- 125000004738 (C1-C6) alkyl sulfinyl group Chemical group 0.000 description 1
- 125000006700 (C1-C6) alkylthio group Chemical group 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000000895 acaricidal effect Effects 0.000 description 1
- 239000000642 acaricide Substances 0.000 description 1
- 125000003806 alkyl carbonyl amino group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000003124 biologic agent Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 125000000753 cycloalkyl group Chemical class 0.000 description 1
- 239000000417 fungicide Substances 0.000 description 1
- 125000000262 haloalkenyl group Chemical group 0.000 description 1
- 125000004995 haloalkylthio group Chemical group 0.000 description 1
- 239000004009 herbicide Substances 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- LIKMAJRDDDTEIG-UHFFFAOYSA-N n-hexene Natural products CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 1
- 239000005645 nematicide Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 125000005429 oxyalkyl group Chemical group 0.000 description 1
- 239000000575 pesticide Substances 0.000 description 1
- 239000005648 plant growth regulator Substances 0.000 description 1
- 125000005554 pyridyloxy group Chemical group 0.000 description 1
- XXFQGNXPWZSRRK-UHFFFAOYSA-N sodium;n-chlorobenzenesulfonamide Chemical compound [Na+].ClNS(=O)(=O)C1=CC=CC=C1 XXFQGNXPWZSRRK-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000002730 succinyl group Chemical group C(CCC(=O)*)(=O)* 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76847—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned within the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/019—Contacts of silicides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
Description
1366561 5. 姓名:(中文/英文)塚田英孝/TSUKADA,fflDETAKA 國籍:(中文/英文)日本jp 6. 姓名:(中文/英文)高橋祐介/TAKAHASm YUSUKE 國籍:(中文/英文)曰本jp 7. 姓名:(中文/英文)河原信行/KAWAHARA,NOBUYUKI 國籍:(中文/英文)曰本jp 8. 姓名:(中文/英文)野村路一 /N〇MURA MIcHIKAZU 國籍:(中文/英文)曰本jp 9. 姓名:(中文/英文)大同英則/DAID〇,fflDEN〇RI 國籍:(中文/英文)曰本jp 四、聲明事項: □主張專利法第二十二條第二項□第—款或□第二款規定之事實,其 事實發生曰期為:年月日。 0申請前已向下列國家(地區)申請專利: 【格式請依:受理國家(地區)、巾請日、巾請錢順序註記】 0有主張專利法第二十七條第一項國際優先權: 1·受理國家(地區):日本JP 申請曰期:2005年6月21日 申請案號:特願2005-180660 □無主張專觀第二十七條第―棚際優先權: □主張專利法第二十九條第—項關優先權: 【格式請依:·申請曰、申請案號;嗔序註記】 □主張專利法第三十條生物材料: 1366561 □須寄存生物材料者: 國内生物材料【格式請依:寄存機構、日期、號碼順序註記】 國外生物材料【格式請依:寄存國家、機構、日期、號碼順序註記】 □不須寄存生物材料者: 所屬技術領域中具有通常知識者易於獲得時,不須寄存。 1366561 九、發明說明: 【發明所屬之技術領域】 本發明係關於新穎醯胺衍生物及含有該化合物當作有效成分 之殺蟲劑。 【先前技術】 國際公開第2000/55120號說明小册及美國專利第6548514號 說明書δ己載當作醫藥用途之類似本發明化合物之化合物,但對於 昆蟲之活性則全無記載。且顯然為本發明之申請專利範圍以外之 鲁化合物。 國際公開第2000/7980號說明小册記載當作醫藥用途之類似 本發明化合物之化合物,但對於昆蟲之活性則全無記載。且顯然 為本發明之申請專利範圍以外之化合物。 美國專利公開第2〇〇2 - 032238號說明書記載當作醫藥用途之 類似本發明化合物之化合物,但對於昆蟲之活性則全無記載。且 顯然為本發明之申請專利範圍以外之化合物。 專利文獻1 :國際公開第2000/55120號說明小册 專利文獻2 :美國專利第6548514號說明書 _ 專利文獻3 :國際公開第2000/7980號說明小册 專利文獻4 .美國專利公開第2002 _ 032238號說明書 【發明内容】 「發明欲解決之課題」 人故本ft目的在提供以—般式⑴表示或以—般式(5)表示之化 s物,及3有該化合物當作有效成分之殺蟲劑。 「解決課題之方法」 明之ίϊΐίϊ4解決上述課題而—再精^研究結果,發現本發 二文獻之新_化合物,由於顯著具有優異殺 ,,發現§作殺蟲劑之新穎用途,乃完成本發明。 1366561 可被1個以上烷氧基取代之α 一 C6齒化烧基、 可被1個以上鹵化烷氧基取代之C1 _ C6鹵化烷基、 C1 - C6烷硫基、 土 C1~C6鹵化烷硫基、 被取代之a - C6鹵化烷硫基[被選自氫原子、羥基、氯原 加、/臭原子、蛾原子、ci - C6烷氧基C1 _ C6鹵化烧氧基中之1 個以上相同或相異取代基取代]、 C1 - C6烷亞磺醯基、
Cl - C6鹵化烷亞磺醯基、 # 被取代之C1 — C6鹵化烧亞續醯基[被選自氫原子、經基、氣 原子、漠原子、碘原子、Cl - C6烷氧基或Cl - C6鹵化烧氧基中 之1個以上相同或相異取代基取代]、
Cl - C6烷磺醯基、 C1-C6鹵化烷磺醯基、 被取代之a - C6鹵化烷磺醯基[被選自氫原子、經基、氣原 子、溴原子、碘原子、Cl - C6烷氧基或C1 - C6鹵化烷氧基中之 1個以上相同或相異取代基取代]、
Cl - C4烷氧羰基、Cl - C4鹵化烷氧羰基、Cl - C4烷羰胺 •基、Cl - C4鹵化烷羰胺基、Cl - C6烷磺醯氧基、Cl - C6鹵化烷 着磺醯氧基、Cl - C4烷羰基、Cl - C4 _化烧羰基、Cl - C4烷羰氧 基、Cl - C4鹵化烷羰氧基、氰基、硝基、羥基、五氟硫烷基、羧 基’胺基曱醯基、C! - C3院胺羰基、苯偶氮基、H比咬氧基、 被取代之吡啶氧基[具有選自鹵素原子、Cl - C4烷基、Cl - C4 鹵化烷基、被取代之Cl - C4烷基、C2 - C4烯基、C2 - C4鹵化 烯基、C2 - C4炔基、C2 - C4 _化炔基、C3 - C8環烷基、C3 -C8鹵化環烷基、Cl - C3烷氧基、Cl - C3鹵化烷氧基、Cl - C3 烷硫基、Cl - C3 _化烷硫基、Cl - C3烷亞磺醯基、Cl - C3鹵化 烷亞磺醯基、Cl - C3烷磺醯基、Cl - C3鹵化烷磺醯基、Cl - C4 烧胺基、二Cl _ C4烧胺基、氰基、確基、經基、Cl - C4烧数基、 12 1366561 ~ C4鹵化烷羰胺基、Cl - C4烷磺醯 基、芳磺醯氧基、五氟硫烷基或苯基 艘基、Cl - C4烷羧胺基、C1 — C4 氧基、Cl - C4函化烧4醯氧基、^ 中之1個以上相同或相異取代基]: Q2為一般式(2)表示之基
(式中· Y!、Ys可相同或相異,為鹵素
y2、y二y相同或相異,為氫原子、.素原子或C1_C6烧基, Y3為三I曱基、Cl - C6全氟烧氧基、五氟硫烷基、 被取代之a - C6 i化烧氧基[被選自氫原子、經基、氣原 子、、/臭原子、峨原子、Cl - C6烷氧基或C1 _ C6鹵化烧氧基中之 1個以上相同或相異取代基取代]、 被取代之Cl - C6鹵化烷硫基[被選自氫原子、羥基、氣原 子、演原子、蛾原子、Cl - C6烷氧基或C1 _ C6 _化烧氧基中之 1個以上相同或相異取代基取代]、 被取代之C1 - C6 i化烧亞磺醯基[被選自氫原子、經基、氣 原子、溴原子、碘原子、Cl _ C6烷氧基或C1 _ C6鹵化烷氧基中 之1個以上相同或相異取代基取代]、或 被取代之Cl - C6鹵化燒續醯基[被選自氫原子、經基、氣原 子、漠原子、碰原子、Cl - C6烷氧基或ci - C6齒化院氧基中之 1個以上相同或相異取代基取代]。) [3]如上述[1]項記載之一般式⑴表示之化合物中: A!為碳原子、氮原子或被氧化之氮原子; 1366561 烧氧基、Cl - C6 _化燒氧基、Cl - C6烧硫基、Cl - C6鹵化烧硫 基、Cl - C6烷亞磺醯基、Cl - C6鹵化烷亞磺醯基、C1 _ C6烧碚 醯基、Cl - C6鹵化烷磺醯基、氰基或硝基, ” Y2、Y4可相同或相異’為氫原子、鹵素原子、Ci - C6烧基, Y3為Cl - C4齒化烧氧基、C2 - C6全氟燒基、ci - C6全I 览硫基、Cl - C6全氟烧亞磺醯基、C1 _ C6全氟烷磺醯基、三氟 甲基、Cl - C6全氣烧氧基、五氟硫院基、 被取代之Cl - C6鹵化燒氧基[被選自氫原子、經基、氣原 子、漠原子、_子、Cl - C6院氧基或C1_ C6 _化烧氧基中之 1個以上相同或相異取代基取代]、 被取代之Cl - C6鹵化烷硫基[被選自氫原子、羥基、氯原 子、漠原子、賴子' Cl - C6院氧基或C1 _ C6鹵化烧氧基中之 Ϊ個以上相同或相異取代基取代]、 被,代之Cl - C6鹵化烧亞石黃醯基[被選自氣原子、經基、氣 原,、漠原子、職原子、a - C6烧氧基或C1_ C6齒化烧氧基中 之1個以上相同或相異取代基取代]、或 + 之Γ=6函偷黃酿基[被選自氫原子、羥基、氣原 子、>臭原子、爾子、a - C6烧氧基或C1 ϊ個以上相同或補取代基取代]。) 祕沉乳基中之 [4]如上述[1]項記載之一般式⑴表示之化合 A!為碳原子,氮原子或被氧化之氮原子; A2、A3、A4為碳原子; 、’
Ri、R2分別獨立為氫原子或C1__C4燒基;
Gi、&分別獨立為氧原子或硫原子. XJ相同或彳目異,為氫原子,4素原 η為0〜4之整數; 次一亂甲1, (^為苯基, 被取代之苯基[具有選自_素原子'd 鹵化絲、被取代之C1 — C4烧基、C2 _ c4烯基=—㈣化 21 1366561 毅基、Cl - C4烧羰胺基、C1 _ C4 _化院羰胺基、α _ C4烷磺醯 氧基、Cl - C4鹵化燒續醯氧基、芳磺醯氧基、五氟硫烷基或苯基 中之1個以上相同或相異取代基]。) [8]—種机蟲劑’其特徵為含有如上述[1]至p]項中任一項記載 之化合物當作有效成分。 「發明效果」 本發明之化合物當作低劑量殺蟲劑時表現優異防治效果,並 與,他殺蟲劑、殺蟎劑、殺線蟲劑、殺菌劑、殺草劑、植物生長 調節劑、生物農藥等組合使用時亦表現優異防治效果。 【實施方式】 關於本發明之化合物,以一般式(1)表示。
⑴ {式中:Ai、A2、八3、A*各為碳原子,氮原子或被氧化之氮 原子; R!分別獨立為氫原子,C1-C4烷基,C1-C4燒魏某; Gi、G〗分別獨立為氧原子或硫原子; X可相同或相異’為氫原子’鹵素原子,Cl -C3境基戍三氣 曱基; η為0〜4之整數; (^為苯基, 被取代之苯基[具有選自鹵素原子、C1-C4烷基、Cl_C4 鹵化烧基、被取代之Cl - C4烷基、C2 - C4稀基、C2 ·~ C4齒化 烯基、C2 - C4炔基、C2 - C4鹵化炔基、C3 - C8環燒基、C3 _
Claims (1)
1366561 五氟乙基、3-氟正丙基、3-氣正丙基、3 —溴正丙基、—二氟_ 2 -丙基、1,3-二氣-2 -丙基、l,i,i-三氟-2 -丙基、1-氣-3- 氟-2-丙基、1,1,1,3,3,3-六氟-2-丙基、1,1,1,3,3,3-六氟-2- 氣2丙基、、2,2,3,3,3-五氟正丙基、七氟異丙基、七氟正丙 基、1 /臭1,1,2,3,3,3 _六氧_ 2 _丙基等被1個以上相同或相異 鹵素原子所取代之碳原子數1〜3之直鏈狀或分支鏈狀烷基;
「Cl -C4鹵化烧基」為「C1 — C3齒化烧基」加上如4_氟正丁 基、九氟正·^基、九氟丁基等被1個以上相同或相異鹵素原 子所取代之碳原子數1〜4之直鏈狀或分支鏈狀烷基;「ci - C6鹵 化烷基」為:Cl - C3 _化烷基」加上如6,6,6 _三氟正己基、九氟 正丁基、九氟-2 - 丁基等被i個以上相同或相異鹵素原子所取代 之碳原子數1〜4之直鏈狀或分支鏈狀烷基。 「C2 - C4烯基」表示如乙烯基、烯丙基、2 _ 丁烯基、3 _ 丁 烯基等碳鏈中具有雙鍵之碳原子數2〜4之烯基。「C2 _ C4鹵化烯 基表示如3,3 -二說-2 -丙烯基、3,3 -二氣—2 -丙烯基、3,3- 一肩-2 - 烯基、2,3 -二漠-2 -丙稀基、4,4 -二氟-3 - 丁烯 基、3,4,4 -三溴_ 3 — 丁烯基等被i個以上相同或相異之齒素原子 $取代之碳射具有魏之碳軒數2〜4之直鏈狀或分支鍵狀稀 「C2 — C4块基」表示如炔丙基、1 - 丁炔-3 -基、1 - 丁块— 3甲3基4¼鏈中具有三鍵之直鏈狀或分支鏈狀 2〜4,基。「C2 -㈣化炔基」表示如被i個以上相 j素原顿取狀碳财具有三狀碳軒數2〜 分支鏈狀炔基。 且硬狀次 'C8環絲」麵如環祕、環丁基、環戊基、2 -甲 ίΪί气:曱f環「戊基、環己基、環庚基等具環狀結構之碳原 ?之,基。C3 - C8鹵化環絲」表示如2,2,3,3 -四氟 =二己基t氣環己基等被1個以上相同或相異之 #素原子所取代之财環狀結構之碳原子數3〜8之環燒基。 45 1366561 q從C1-C3燒氧基」表示如曱氧基、乙氧基、正丙氧基、異丙 ^基·#碳原子數1〜3之直鏈狀或分支鏈狀絲基;「α _ C4炫氧 基」為「Cl - C3烷氧基」加上如2 _ 丁氧基等碳原子數丨〜4之直 ,狀或分支鏈氧基。「α _ C3鹵化絲基」表示如三氣甲氧 :、1二1,2-二氟乙氧基、^3,3,3-六氟_2一丙氧基、2,2,2 一三 氟乙氧基、2 -氯乙氧基、3 —敦正丙氧基、四氟乙’氧基、 U,2j,3,3 _六氟丙氧基等被〗個以上相同或相異之鹵素原子所取 ,之碳原子數1〜3之錢狀或分支鏈紐氧基;「a _ C4齒化炫 =基」為「Cl-C3鹵化烧氧基」加上如六氣正丙氧 土、U,l,3,3,4,4,4-八氟-2- 丁氧基等被1個以上相同或相異之 鹵素,子所取代之碳原子數1〜4之直鏈狀或分支鏈狀烷氧基。 七「Cl - C3烷硫基」表示如曱硫基、乙硫基、正丙硫基、異丙 ,基、環丙硫基等碳原子數丨〜3之直鏈狀或分支鏈狀烷硫基; 六Cl C4烧硫基」為「C1 - C3烧硫基」加上如正丁硫基、異丁 硫基、第二丁硫基、第三丁硫基、環丙甲硫基等碳原子數丨〜4之 直鏈狀或分支鏈狀烷硫基;「Cl - C6垸硫基」為「ci - C4烷硫基」 加上如正戊硫基、正己硫基等碳原子數丨〜6之直鏈狀或分支鏈狀 燒*硫基。 ^ 「C1 _C3鹵化烷硫基」表示如三氟曱硫基、五氟乙硫基、2- 氟乙硫基、2,2,2-二氟乙硫基、七氟正丙硫基、七氟異丙硫基、 U,2,2 -四氟乙硫基、ι,ι,2,3,3,3 -六氟丙硫基等被!個以上相同 或相異之鹵素原子所取代之碳原子數1〜3之直鍵狀或分支鏈狀烧 硫基;「Cl - C4鹵化烷硫基」為「C1 _ C3鹵化烷硫基」加上如九 氟正丁硫基、九氟第二丁硫基、4,4,4 -三氟正丁硫基等被丨個以 上相同或相異之鹵素原子所取代之碳原子數丨〜4之直鏈狀或分支 鏈狀烧硫基;「Cl - C6鹵化烷硫基」為「ci - C4齒化烷硫基」加 上如全氟正戊硫基、全氟正己硫基等被1個以上相同或相異之鹵 素原子所取代之碳原子數1〜4之直鏈狀或分支鏈狀烷硫基。 「Cl - C3烷亞續驢基」表示如甲亞績醯基、乙亞確驢基、正 46
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US6420262B1 (en) | 2000-01-18 | 2002-07-16 | Micron Technology, Inc. | Structures and methods to enhance copper metallization |
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DE19727399A1 (de) | 1998-01-02 |
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KR980005571A (ko) | 1998-03-30 |
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