TW345736B - Field-effect transistor and manufacture thereof - Google Patents
Field-effect transistor and manufacture thereofInfo
- Publication number
- TW345736B TW345736B TW086110395A TW86110395A TW345736B TW 345736 B TW345736 B TW 345736B TW 086110395 A TW086110395 A TW 086110395A TW 86110395 A TW86110395 A TW 86110395A TW 345736 B TW345736 B TW 345736B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate electrode
- semiconductor substrate
- effect transistor
- conductive type
- field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000002019 doping agent Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9076158A JPH10270687A (ja) | 1997-03-27 | 1997-03-27 | 電界効果トランジスタおよびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW345736B true TW345736B (en) | 1998-11-21 |
Family
ID=13597254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086110395A TW345736B (en) | 1997-03-27 | 1997-07-22 | Field-effect transistor and manufacture thereof |
Country Status (6)
Country | Link |
---|---|
US (1) | US5895954A (zh) |
JP (1) | JPH10270687A (zh) |
KR (1) | KR100275846B1 (zh) |
CN (1) | CN1195199A (zh) |
DE (1) | DE19744687A1 (zh) |
TW (1) | TW345736B (zh) |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100223847B1 (ko) * | 1997-05-06 | 1999-10-15 | 구본준 | 반도체 소자의 구조 및 제조 방법 |
US6037640A (en) * | 1997-11-12 | 2000-03-14 | International Business Machines Corporation | Ultra-shallow semiconductor junction formation |
US6153892A (en) * | 1998-02-12 | 2000-11-28 | Nec Corporation | Semiconductor device and method for manufacture thereof |
JP2000049344A (ja) | 1998-07-31 | 2000-02-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6221724B1 (en) * | 1998-11-06 | 2001-04-24 | Advanced Micro Devices, Inc. | Method of fabricating an integrated circuit having punch-through suppression |
US6084269A (en) * | 1998-12-21 | 2000-07-04 | Motorola, Inc. | Semiconductor device and method of making |
JP4397066B2 (ja) * | 1999-03-24 | 2010-01-13 | 日本テキサス・インスツルメンツ株式会社 | ラッチ回路 |
US6238982B1 (en) * | 1999-04-13 | 2001-05-29 | Advanced Micro Devices | Multiple threshold voltage semiconductor device fabrication technology |
KR100584818B1 (ko) | 1999-04-16 | 2006-05-30 | 동경 엘렉트론 주식회사 | 반도체 장치의 제조 방법 및 그 제조 라인 |
US6333217B1 (en) | 1999-05-14 | 2001-12-25 | Matsushita Electric Industrial Co., Ltd. | Method of forming MOSFET with channel, extension and pocket implants |
US6420767B1 (en) | 2000-06-28 | 2002-07-16 | Advanced Micro Devices, Inc. | Capacitively coupled DTMOS on SOI |
US6623514B1 (en) * | 2001-08-01 | 2003-09-23 | Origin Medsystems, Inc. | Method of cooling an organ |
JP4709442B2 (ja) * | 2001-08-28 | 2011-06-22 | 株式会社 日立ディスプレイズ | 薄膜トランジスタの製造方法 |
DE10245575A1 (de) * | 2002-09-27 | 2004-04-15 | Zentrum Mikroelektronik Dresden Ag | Feldeffekttransistor |
US6800887B1 (en) * | 2003-03-31 | 2004-10-05 | Intel Corporation | Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
US20080099852A1 (en) * | 2006-10-31 | 2008-05-01 | Juergen Faul | Integrated semiconductor device and method of manufacturing an integrated semiconductor device |
US8273617B2 (en) | 2009-09-30 | 2012-09-25 | Suvolta, Inc. | Electronic devices and systems, and methods for making and using the same |
US8421162B2 (en) | 2009-09-30 | 2013-04-16 | Suvolta, Inc. | Advanced transistors with punch through suppression |
US8530286B2 (en) | 2010-04-12 | 2013-09-10 | Suvolta, Inc. | Low power semiconductor transistor structure and method of fabrication thereof |
US8569128B2 (en) | 2010-06-21 | 2013-10-29 | Suvolta, Inc. | Semiconductor structure and method of fabrication thereof with mixed metal types |
US8759872B2 (en) | 2010-06-22 | 2014-06-24 | Suvolta, Inc. | Transistor with threshold voltage set notch and method of fabrication thereof |
US8377783B2 (en) | 2010-09-30 | 2013-02-19 | Suvolta, Inc. | Method for reducing punch-through in a transistor device |
US8404551B2 (en) | 2010-12-03 | 2013-03-26 | Suvolta, Inc. | Source/drain extension control for advanced transistors |
CN102110614B (zh) * | 2011-01-05 | 2014-11-05 | 北京大学深圳研究生院 | 高k金属栅mos晶体管的制造方法 |
US8461875B1 (en) | 2011-02-18 | 2013-06-11 | Suvolta, Inc. | Digital circuits having improved transistors, and methods therefor |
US8525271B2 (en) | 2011-03-03 | 2013-09-03 | Suvolta, Inc. | Semiconductor structure with improved channel stack and method for fabrication thereof |
US8400219B2 (en) | 2011-03-24 | 2013-03-19 | Suvolta, Inc. | Analog circuits having improved transistors, and methods therefor |
US8748270B1 (en) | 2011-03-30 | 2014-06-10 | Suvolta, Inc. | Process for manufacturing an improved analog transistor |
US8999861B1 (en) | 2011-05-11 | 2015-04-07 | Suvolta, Inc. | Semiconductor structure with substitutional boron and method for fabrication thereof |
US8796048B1 (en) | 2011-05-11 | 2014-08-05 | Suvolta, Inc. | Monitoring and measurement of thin film layers |
US8811068B1 (en) | 2011-05-13 | 2014-08-19 | Suvolta, Inc. | Integrated circuit devices and methods |
US8569156B1 (en) | 2011-05-16 | 2013-10-29 | Suvolta, Inc. | Reducing or eliminating pre-amorphization in transistor manufacture |
US8735987B1 (en) | 2011-06-06 | 2014-05-27 | Suvolta, Inc. | CMOS gate stack structures and processes |
US8995204B2 (en) | 2011-06-23 | 2015-03-31 | Suvolta, Inc. | Circuit devices and methods having adjustable transistor body bias |
US8629016B1 (en) | 2011-07-26 | 2014-01-14 | Suvolta, Inc. | Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer |
KR101891373B1 (ko) | 2011-08-05 | 2018-08-24 | 엠아이이 후지쯔 세미컨덕터 리미티드 | 핀 구조물을 갖는 반도체 디바이스 및 그 제조 방법 |
US8748986B1 (en) | 2011-08-05 | 2014-06-10 | Suvolta, Inc. | Electronic device with controlled threshold voltage |
US8614128B1 (en) | 2011-08-23 | 2013-12-24 | Suvolta, Inc. | CMOS structures and processes based on selective thinning |
US8645878B1 (en) | 2011-08-23 | 2014-02-04 | Suvolta, Inc. | Porting a circuit design from a first semiconductor process to a second semiconductor process |
US8713511B1 (en) | 2011-09-16 | 2014-04-29 | Suvolta, Inc. | Tools and methods for yield-aware semiconductor manufacturing process target generation |
US9236466B1 (en) | 2011-10-07 | 2016-01-12 | Mie Fujitsu Semiconductor Limited | Analog circuits having improved insulated gate transistors, and methods therefor |
US8895327B1 (en) | 2011-12-09 | 2014-11-25 | Suvolta, Inc. | Tipless transistors, short-tip transistors, and methods and circuits therefor |
US8819603B1 (en) | 2011-12-15 | 2014-08-26 | Suvolta, Inc. | Memory circuits and methods of making and designing the same |
US8883600B1 (en) | 2011-12-22 | 2014-11-11 | Suvolta, Inc. | Transistor having reduced junction leakage and methods of forming thereof |
US8599623B1 (en) | 2011-12-23 | 2013-12-03 | Suvolta, Inc. | Circuits and methods for measuring circuit elements in an integrated circuit device |
US8970289B1 (en) | 2012-01-23 | 2015-03-03 | Suvolta, Inc. | Circuits and devices for generating bi-directional body bias voltages, and methods therefor |
US8877619B1 (en) | 2012-01-23 | 2014-11-04 | Suvolta, Inc. | Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom |
US9093550B1 (en) | 2012-01-31 | 2015-07-28 | Mie Fujitsu Semiconductor Limited | Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same |
US9406567B1 (en) | 2012-02-28 | 2016-08-02 | Mie Fujitsu Semiconductor Limited | Method for fabricating multiple transistor devices on a substrate with varying threshold voltages |
US8863064B1 (en) | 2012-03-23 | 2014-10-14 | Suvolta, Inc. | SRAM cell layout structure and devices therefrom |
US9299698B2 (en) | 2012-06-27 | 2016-03-29 | Mie Fujitsu Semiconductor Limited | Semiconductor structure with multiple transistors having various threshold voltages |
US8962434B2 (en) * | 2012-07-10 | 2015-02-24 | International Business Machines Corporation | Field effect transistors with varying threshold voltages |
US8637955B1 (en) | 2012-08-31 | 2014-01-28 | Suvolta, Inc. | Semiconductor structure with reduced junction leakage and method of fabrication thereof |
US9112057B1 (en) | 2012-09-18 | 2015-08-18 | Mie Fujitsu Semiconductor Limited | Semiconductor devices with dopant migration suppression and method of fabrication thereof |
US9041126B2 (en) | 2012-09-21 | 2015-05-26 | Mie Fujitsu Semiconductor Limited | Deeply depleted MOS transistors having a screening layer and methods thereof |
JP2016500927A (ja) | 2012-10-31 | 2016-01-14 | 三重富士通セミコンダクター株式会社 | 低変動トランジスタ・ペリフェラル回路を備えるdram型デバイス、及び関連する方法 |
US8816754B1 (en) | 2012-11-02 | 2014-08-26 | Suvolta, Inc. | Body bias circuits and methods |
US9093997B1 (en) | 2012-11-15 | 2015-07-28 | Mie Fujitsu Semiconductor Limited | Slew based process and bias monitors and related methods |
US9070477B1 (en) | 2012-12-12 | 2015-06-30 | Mie Fujitsu Semiconductor Limited | Bit interleaved low voltage static random access memory (SRAM) and related methods |
US9112484B1 (en) | 2012-12-20 | 2015-08-18 | Mie Fujitsu Semiconductor Limited | Integrated circuit process and bias monitors and related methods |
US9268885B1 (en) | 2013-02-28 | 2016-02-23 | Mie Fujitsu Semiconductor Limited | Integrated circuit device methods and models with predicted device metric variations |
US8994415B1 (en) | 2013-03-01 | 2015-03-31 | Suvolta, Inc. | Multiple VDD clock buffer |
US8988153B1 (en) | 2013-03-09 | 2015-03-24 | Suvolta, Inc. | Ring oscillator with NMOS or PMOS variation insensitivity |
US9299801B1 (en) | 2013-03-14 | 2016-03-29 | Mie Fujitsu Semiconductor Limited | Method for fabricating a transistor device with a tuned dopant profile |
US9112495B1 (en) | 2013-03-15 | 2015-08-18 | Mie Fujitsu Semiconductor Limited | Integrated circuit device body bias circuits and methods |
US9449967B1 (en) | 2013-03-15 | 2016-09-20 | Fujitsu Semiconductor Limited | Transistor array structure |
US9478571B1 (en) | 2013-05-24 | 2016-10-25 | Mie Fujitsu Semiconductor Limited | Buried channel deeply depleted channel transistor |
US8976575B1 (en) | 2013-08-29 | 2015-03-10 | Suvolta, Inc. | SRAM performance monitor |
US9710006B2 (en) | 2014-07-25 | 2017-07-18 | Mie Fujitsu Semiconductor Limited | Power up body bias circuits and methods |
US9319013B2 (en) | 2014-08-19 | 2016-04-19 | Mie Fujitsu Semiconductor Limited | Operational amplifier input offset correction with transistor threshold voltage adjustment |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391508A (en) * | 1992-12-21 | 1995-02-21 | Sharp Kabushiki Kaisha | Method of forming semiconductor transistor devices |
JP2848757B2 (ja) * | 1993-03-19 | 1999-01-20 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
US5792699A (en) * | 1996-06-03 | 1998-08-11 | Industrial Technology Research Institute | Method for reduction of reverse short channel effect in MOSFET |
-
1997
- 1997-03-27 JP JP9076158A patent/JPH10270687A/ja active Pending
- 1997-07-22 TW TW086110395A patent/TW345736B/zh active
- 1997-08-27 US US08/917,929 patent/US5895954A/en not_active Expired - Fee Related
- 1997-09-18 KR KR1019970047545A patent/KR100275846B1/ko not_active IP Right Cessation
- 1997-10-09 DE DE19744687A patent/DE19744687A1/de not_active Withdrawn
- 1997-11-18 CN CN97122719A patent/CN1195199A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100275846B1 (ko) | 2001-01-15 |
JPH10270687A (ja) | 1998-10-09 |
US5895954A (en) | 1999-04-20 |
CN1195199A (zh) | 1998-10-07 |
DE19744687A1 (de) | 1998-10-01 |
KR19980079368A (ko) | 1998-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW345736B (en) | Field-effect transistor and manufacture thereof | |
EP0371785A3 (en) | Lateral conductivity modulated mosfet | |
WO2003100865A3 (en) | Microwave field effect transistor structure | |
TW331034B (en) | Flash EEPROM device and manufacturing method thereof | |
TW374226B (en) | Graded-channel semiconductor device and method of manufacturing the same | |
KR930005257A (ko) | 박막 전계효과 소자 및 그의 제조방법 | |
EP0820096A3 (en) | Semiconductor device and method for fabricating the same | |
AU5545894A (en) | Power mosfet in silicon carbide | |
WO2003003452A3 (en) | Field-effect transistor and method of making the same | |
KR940020576A (ko) | 반도체트랜지스터구조(Metal oxide semiconductor transistors having a polysilicon gate electrode with nonuniform doping in source-drain direction) | |
EP1152470A3 (en) | Semiconductor device with LDD structure and process of manufacturing the same | |
KR910017673A (ko) | 반도체장치 | |
MY121099A (en) | Device contact structure and method for fabricating same. | |
KR840005929A (ko) | Mos 트랜지스터 집적회로 | |
TW344108B (en) | A bipolar transistor and method of manufacturing thereof | |
KR0120542B1 (en) | Semiconductor device and method thereof | |
TW330330B (en) | A semiconductor device | |
JPS5291382A (en) | Insulating gate type field effect transistor | |
JPS641275A (en) | Semiconductor device | |
KR950015801A (ko) | 박막트랜지스터의 구조 | |
JPS6417475A (en) | Manufacture of mos semiconductor device | |
KR940022829A (ko) | 모스(mos) 트랜지스터 제조방법 | |
KR940022892A (ko) | 박막 트랜지스터 제조방법 | |
KR920005383A (ko) | 오프셋 게이트 구조 트랜지스터 및 그 제조 방법 | |
KR960043170A (ko) | 반도체 소자 제조방법 |