TW343324B - Thin-film transistor element array - Google Patents
Thin-film transistor element arrayInfo
- Publication number
- TW343324B TW343324B TW086107189A TW86107189A TW343324B TW 343324 B TW343324 B TW 343324B TW 086107189 A TW086107189 A TW 086107189A TW 86107189 A TW86107189 A TW 86107189A TW 343324 B TW343324 B TW 343324B
- Authority
- TW
- Taiwan
- Prior art keywords
- wires
- film transistor
- gate
- thin film
- drain
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 6
- 239000010408 film Substances 0.000 abstract 4
- 125000006850 spacer group Chemical group 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13715396A JPH09318975A (ja) | 1996-05-30 | 1996-05-30 | 薄膜電界効果型トランジスタ素子アレイおよびその製造 方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW343324B true TW343324B (en) | 1998-10-21 |
Family
ID=15192069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086107189A TW343324B (en) | 1996-05-30 | 1997-05-27 | Thin-film transistor element array |
Country Status (5)
Country | Link |
---|---|
US (1) | US5952675A (zh) |
EP (1) | EP0810669A1 (zh) |
JP (1) | JPH09318975A (zh) |
KR (1) | KR970076021A (zh) |
TW (1) | TW343324B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6232208B1 (en) * | 1998-11-06 | 2001-05-15 | Advanced Micro Devices, Inc. | Semiconductor device and method of manufacturing a semiconductor device having an improved gate electrode profile |
US6600157B2 (en) * | 2000-06-27 | 2003-07-29 | Canon Kabushiki Kaisha | Semiconductor device, and radiation detection device and radiation detection system having same |
TW525216B (en) * | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
JP4067819B2 (ja) * | 2000-12-21 | 2008-03-26 | 株式会社半導体エネルギー研究所 | 発光装置 |
SG111923A1 (en) | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP2006303449A (ja) * | 2005-04-21 | 2006-11-02 | Samsung Sdi Co Ltd | アクティブマトリックス回路基板、この製造方法及びこれを備えたアクティブマトリックスディスプレイ装置 |
KR100647690B1 (ko) * | 2005-04-22 | 2006-11-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 |
TWI289360B (en) * | 2005-10-24 | 2007-11-01 | Chunghwa Picture Tubes Ltd | Thin film transistor array substrate and manufacturing method thereof |
JP5111867B2 (ja) * | 2007-01-16 | 2013-01-09 | 株式会社ジャパンディスプレイイースト | 表示装置 |
JP5305190B2 (ja) * | 2007-06-21 | 2013-10-02 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
DE102009007947B4 (de) * | 2009-02-06 | 2014-08-14 | Universität Stuttgart | Verfahren zur Herstellung eines Aktiv-Matrix-OLED-Displays |
CN101819961B (zh) * | 2009-02-27 | 2015-04-29 | 北京京东方光电科技有限公司 | 液晶显示器的阵列基板、信号线及其制造方法 |
US20100224878A1 (en) | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN107219702A (zh) * | 2017-07-20 | 2017-09-29 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制造方法、液晶显示装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154289A (en) * | 1978-05-26 | 1979-12-05 | Matsushita Electric Ind Co Ltd | Manufacture of thin-film transistor array |
FR2533072B1 (fr) * | 1982-09-14 | 1986-07-18 | Coissard Pierre | Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs |
JPS60261174A (ja) * | 1984-06-07 | 1985-12-24 | Nippon Soken Inc | マトリツクスアレ− |
US4689116A (en) * | 1984-10-17 | 1987-08-25 | L'etat Francais Represented By The Minister Of Ptt (Centre National D'etudes Des Telecommunications) | Process for fabricating electronic circuits based on thin-film transistors and capacitors |
JPH0213928A (ja) * | 1988-07-01 | 1990-01-18 | Sharp Corp | 薄膜トランジスタアレイ |
JP2703328B2 (ja) * | 1989-04-19 | 1998-01-26 | 三洋電機株式会社 | 液晶表示装置 |
JP3089675B2 (ja) * | 1991-03-08 | 2000-09-18 | 日本電気株式会社 | 薄膜電界効果型トランジスタ駆動液晶表示素子アレイ及び駆動方法 |
DE69214053D1 (de) * | 1991-07-24 | 1996-10-31 | Fujitsu Ltd | Aktive Flüssigkristallanzeigevorrichtung vom Matrixtyp |
JPH06308511A (ja) * | 1993-04-26 | 1994-11-04 | Hitachi Ltd | 液晶表示基板 |
JPH07110495A (ja) * | 1993-10-14 | 1995-04-25 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
JPH07325314A (ja) * | 1994-05-31 | 1995-12-12 | Sanyo Electric Co Ltd | 液晶表示装置 |
-
1996
- 1996-05-30 JP JP13715396A patent/JPH09318975A/ja active Pending
-
1997
- 1997-05-22 US US08/861,538 patent/US5952675A/en not_active Expired - Lifetime
- 1997-05-27 EP EP97108538A patent/EP0810669A1/en not_active Withdrawn
- 1997-05-27 TW TW086107189A patent/TW343324B/zh not_active IP Right Cessation
- 1997-05-29 KR KR1019970021652A patent/KR970076021A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR970076021A (ko) | 1997-12-10 |
EP0810669A1 (en) | 1997-12-03 |
US5952675A (en) | 1999-09-14 |
JPH09318975A (ja) | 1997-12-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |