TW328592B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW328592B
TW328592B TW086109786A TW86109786A TW328592B TW 328592 B TW328592 B TW 328592B TW 086109786 A TW086109786 A TW 086109786A TW 86109786 A TW86109786 A TW 86109786A TW 328592 B TW328592 B TW 328592B
Authority
TW
Taiwan
Prior art keywords
voltage
responding
power
memory device
semiconductor memory
Prior art date
Application number
TW086109786A
Other languages
English (en)
Inventor
Takashi Itou
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW328592B publication Critical patent/TW328592B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW086109786A 1997-02-14 1997-07-11 Semiconductor memory device TW328592B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9030093A JPH10228769A (ja) 1997-02-14 1997-02-14 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW328592B true TW328592B (en) 1998-03-21

Family

ID=12294176

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109786A TW328592B (en) 1997-02-14 1997-07-11 Semiconductor memory device

Country Status (6)

Country Link
US (1) US5986959A (zh)
JP (1) JPH10228769A (zh)
KR (1) KR100266117B1 (zh)
CN (1) CN1190783A (zh)
DE (1) DE19734909C2 (zh)
TW (1) TW328592B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4274597B2 (ja) * 1998-05-29 2009-06-10 株式会社ルネサステクノロジ 半導体集積回路装置
US6201751B1 (en) * 1999-03-08 2001-03-13 Micron Technology, Inc. Integrated circuit power-up controllers, integrated circuit power-up circuits, and integrated circuit power-up methods
JP2000339958A (ja) 1999-05-25 2000-12-08 Toshiba Corp 半導体集積回路
US6515934B2 (en) * 1999-07-26 2003-02-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip area
US6563746B2 (en) * 1999-11-09 2003-05-13 Fujitsu Limited Circuit for entering/exiting semiconductor memory device into/from low power consumption mode and method of controlling internal circuit at low power consumption mode
JP3902909B2 (ja) * 2000-07-19 2007-04-11 沖電気工業株式会社 低消費電力型ダイナミックランダムアクセスメモリ
US7002854B2 (en) * 2000-07-25 2006-02-21 Nec Electronics Corp. Internal voltage level control circuit and semiconductor memory device as well as method of controlling the same
JP3900846B2 (ja) * 2001-03-02 2007-04-04 セイコーエプソン株式会社 音叉型水晶振動片、振動子、発振器及び携帯用電話装置
KR100691485B1 (ko) * 2003-07-29 2007-03-09 주식회사 하이닉스반도체 액티브 모드시에 전류소모를 줄일 수 있는 반도체 메모리장치
US7227804B1 (en) * 2004-04-19 2007-06-05 Cypress Semiconductor Corporation Current source architecture for memory device standby current reduction
JP4488800B2 (ja) * 2004-06-14 2010-06-23 株式会社ルネサステクノロジ 半導体集積回路装置
KR100735010B1 (ko) * 2005-09-08 2007-07-03 삼성전자주식회사 플래시 메모리 장치 및 그것을 위한 전압 발생회로
US7598166B2 (en) * 2006-09-08 2009-10-06 International Business Machines Corporation Dielectric layers for metal lines in semiconductor chips
KR100943115B1 (ko) * 2007-07-25 2010-02-18 주식회사 하이닉스반도체 전압 변환 회로 및 이를 구비한 플래시 메모리 소자
JP2009098801A (ja) * 2007-10-15 2009-05-07 Toshiba Corp 電源回路及びそれを用いた内部電源電圧発生方法
US8014214B2 (en) * 2007-11-08 2011-09-06 Hynix Semiconductor Inc. Semiconductor memory device
KR100937939B1 (ko) * 2008-04-24 2010-01-21 주식회사 하이닉스반도체 반도체 소자의 내부전압 생성회로
KR101841622B1 (ko) 2010-11-04 2018-05-04 삼성전자주식회사 온-다이 터미네이션 회로를 가지는 불휘발성 메모리 장치 및 그것의 제어 방법
KR101780422B1 (ko) 2010-11-15 2017-09-22 삼성전자주식회사 불휘발성 메모리 장치, 그것의 읽기 방법, 그리고 그것을 포함하는 메모리 시스템
US9317051B2 (en) * 2014-02-06 2016-04-19 SK Hynix Inc. Internal voltage generation circuits
KR20180000206A (ko) * 2016-06-22 2018-01-02 에스케이하이닉스 주식회사 액티브 제어 회로, 이를 이용하는 내부 전압 생성 회로, 메모리 장치 및 시스템

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427094A (en) * 1987-07-23 1989-01-30 Mitsubishi Electric Corp Mos-type semiconductor memory
JPH03272088A (ja) * 1990-03-20 1991-12-03 Fujitsu Ltd 半導体記憶装置
JP3380823B2 (ja) * 1994-06-23 2003-02-24 三菱電機エンジニアリング株式会社 半導体記憶装置
JPH08153388A (ja) * 1994-11-28 1996-06-11 Mitsubishi Electric Corp 半導体記憶装置

Also Published As

Publication number Publication date
KR100266117B1 (ko) 2000-10-02
DE19734909C2 (de) 2002-11-07
KR19980069915A (ko) 1998-10-26
CN1190783A (zh) 1998-08-19
US5986959A (en) 1999-11-16
JPH10228769A (ja) 1998-08-25
DE19734909A1 (de) 1998-08-27

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