TW324744B - Target for cathodic sputtering and method for producing the target - Google Patents

Target for cathodic sputtering and method for producing the target

Info

Publication number
TW324744B
TW324744B TW085108492A TW85108492A TW324744B TW 324744 B TW324744 B TW 324744B TW 085108492 A TW085108492 A TW 085108492A TW 85108492 A TW85108492 A TW 85108492A TW 324744 B TW324744 B TW 324744B
Authority
TW
Taiwan
Prior art keywords
target
pressing
indium oxide
hot
tin oxide
Prior art date
Application number
TW085108492A
Other languages
English (en)
Chinese (zh)
Inventor
Goy Karl-Heinz
Francis Lupton David
Schielke Jorg
Scholz Friedhold
Serole Bernard
Bohmeier Hans
Original Assignee
Heraeus Gmbh W C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Gmbh W C filed Critical Heraeus Gmbh W C
Application granted granted Critical
Publication of TW324744B publication Critical patent/TW324744B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Powder Metallurgy (AREA)
TW085108492A 1995-08-18 1996-07-12 Target for cathodic sputtering and method for producing the target TW324744B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19530364 1995-08-18
DE19540379A DE19540379C1 (de) 1995-08-18 1995-10-30 Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets

Publications (1)

Publication Number Publication Date
TW324744B true TW324744B (en) 1998-01-11

Family

ID=7769768

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085108492A TW324744B (en) 1995-08-18 1996-07-12 Target for cathodic sputtering and method for producing the target

Country Status (3)

Country Link
KR (1) KR100274094B1 (de)
DE (2) DE19540379C1 (de)
TW (1) TW324744B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19721649C2 (de) * 1997-05-23 2003-02-20 Heraeus Gmbh W C Verfahren zur Herstellung eines Mischkristallpulvers mit geringem spezifischen elektrischen Widerstand
FR2839506B1 (fr) * 2002-05-10 2005-06-10 Michelle Paparone Serole Oxyde mixte d'indium etain dit ito a grande conductivite electrique a nanostructure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3300525A1 (de) * 1983-01-10 1984-07-12 Merck Patent Gmbh, 6100 Darmstadt Targets fuer die kathodenzerstaeubung
JP2569774B2 (ja) * 1988-11-22 1997-01-08 三菱マテリアル株式会社 インジウム‐スズ酸化物焼結体の製造法
JPH03207858A (ja) * 1990-01-08 1991-09-11 Nippon Mining Co Ltd Itoスパッタリングターゲットの製造方法
DE4124471C1 (en) * 1991-07-24 1992-06-11 Degussa Ag, 6000 Frankfurt, De Target for cathodic sputtering - produced from partially reduced mixtures of indium oxide and tin oxide by hot pressing in inert protective gas
EP0584672B1 (de) * 1992-08-19 1996-06-12 Tosoh Corporation Verfahren zur Herstellung eines Indiumoxidpulvers verwendbar für einen ITO-Sinterkörper mit hoher Dichte
JPH06158308A (ja) * 1992-11-24 1994-06-07 Hitachi Metals Ltd インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法
DE4407774C1 (de) * 1994-03-09 1995-04-20 Leybold Materials Gmbh Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
KR970011013A (ko) 1997-03-27
KR100274094B1 (ko) 2000-12-15
DE59607443D1 (de) 2001-09-13
DE19540379C1 (de) 1996-09-26

Similar Documents

Publication Publication Date Title
ATE204029T1 (de) Target für die kathodenzerstäubung und verfahren zur herstellung eines solchen targets
CA2272100A1 (en) Method for preparation of metal intercalated fullerene-like metal chalcogenides
EP1164132A3 (de) Kristallines Magnesiumomeprazol
KR940003643A (ko) 고밀도 아이티오(ito) 소결체, 아이티오(ito) 타겟 및 그의 제조방법
AU638074B2 (en) Crystalline sugar alcohol containing uniformly dispersed particulare pharmaceutical compound
EP1233082A4 (de) Sputtertarget, transparentes konduktives oxid und vorbereitungsverfahren für sputtertarget
AU4210199A (en) Tantalum sputtering target and method of manufacture
RU93051523A (ru) Способ изготовления формованного металлокерамического композитного материала, полученный этим способом металлокерамический композитный материал, формованная композиция и способ получения металлического алюминия
EP0323012A3 (de) Kaliumhexatitanatfasern und diese Fasern enthaltendes Material
KR960037184A (ko) 고밀도 ito 소결체 및 그 제조방법과 스퍼터링 타깃
TW324744B (en) Target for cathodic sputtering and method for producing the target
CA2091616A1 (en) Method for manufacturing powdery crystalline maltitol
AU4990293A (en) Micro particles
EP0373848A3 (de) Elektrisch leitender Sinterkörper auf der Basis von Zirkoniumoxid und Verfahren zu seiner Herstellung
SG73660A1 (en) Composite solder glass with reduced melting temperature filing material for same and methods of using same
GR3025423T3 (en) Production of branched polyesters.
CA2082689A1 (en) Zinc oxide crystal and method of producing same
CA2165087A1 (en) Process for preparing a powder mixture and its use
Bazhin et al. Electronic energy structure of substoichiometric molybdenum carbides in different crystallographic modifications
Merzhanov et al. Self-propagating high-temperature synthesis in the production of functionally gradient material
JPH0474860A (ja) Itoスパッタリングターゲット材の製造方法
Ohwa et al. High-Purity Metals Production of Sumitomo Metal Mining Co., Ltd.(SMM)
EP1095929A4 (de) Kristall von 2-hydroxynaphtalen-3-carbonsäure und ein verfahren zu dessen herstellung
CA2144673A1 (en) Refractory Brick
EP0362962A3 (de) Verfahren zur Herstellung von Metalloxidpulvern, ausgehend von Metallalkoxid

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees