KR940003643A - 고밀도 아이티오(ito) 소결체, 아이티오(ito) 타겟 및 그의 제조방법 - Google Patents

고밀도 아이티오(ito) 소결체, 아이티오(ito) 타겟 및 그의 제조방법 Download PDF

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Publication number
KR940003643A
KR940003643A KR1019930016152A KR930016152A KR940003643A KR 940003643 A KR940003643 A KR 940003643A KR 1019930016152 A KR1019930016152 A KR 1019930016152A KR 930016152 A KR930016152 A KR 930016152A KR 940003643 A KR940003643 A KR 940003643A
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South Korea
Prior art keywords
ito
indium
less
sintered body
aqueous solution
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KR1019930016152A
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KR100205556B1 (ko
Inventor
노부로 오가와
기미따까 구마
지까라 우에마
가즈아끼 야마모또
료지 요시무라
다까시 모리
Original Assignee
다시로 마도까
도소 가부시끼가이샤
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Priority claimed from JP4241396A external-priority patent/JPH0664959A/ja
Priority claimed from JP4336161A external-priority patent/JPH06183731A/ja
Priority claimed from JP34587692A external-priority patent/JP3324164B2/ja
Application filed by 다시로 마도까, 도소 가부시끼가이샤 filed Critical 다시로 마도까
Publication of KR940003643A publication Critical patent/KR940003643A/ko
Application granted granted Critical
Publication of KR100205556B1 publication Critical patent/KR100205556B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

고밀도 ITO소결체, 그의 원료로서 사용되는 산화 인듐 분말, 산화 주석 분말 및 이들의 제조방법.

Description

고밀도 아이티오(ITO)소결체, 이이티오(ITO) 타겟 및 그의 제조방법
내용없음

Claims (8)

  1. 밀도 90∼100%, 소결 입경이 1∼20㎛ 인 것을 특징으로 하는 1TO 소결체.
  2. 제1항에 있어서, (In0.6Sn0.4)203의 함유량이 10% 이하인 ITO 소결체.
  3. 1항 또는 2항에 있어서, 기재된 1T0 소결체로 이루어진 스퍼터링타겟.
  4. BET 표면적이 15∼30㎡/g, BET 지름/결정자지틈이 2 이하. 1차 입자의 평균 입자 지름이 0.03∼0.1㎛인 산화 인듐 분말.
  5. 온도가 60∼100℃인 임듐염 수용액과 알칼리 수용액을 [OH]/[In]이 3∼5의 범위가 되도록 혼합할때, (A)인듐염 수용액에 알칼리 수용액을 공급하는 경우, 혼합속도로서 [OH],[In]을 대분 0, 15 이상의 속도로 혼합.(B) 알칼리 수용액에 인듐염 수용액을 공급하는 경우. 혼합 속도로서 [In],[OH]를 매분 0.01 이상의 속도로 혼합, (C) 인듐염 수용액과 알칼리 수용액을 연속적으로 공급하여 혼합한후, 얻어진 수산화물을 가소하는 것을 특징으로 하는 산화 인듐의 제조방법.
  6. 제4항 기재의 산화 인듐 분말과 산화 주석을 혼합, 성형 및 소결하여 이루어지는 ITO 소결체의 제조법.
  7. 제6항에 있어서, BET 표면적이 3㎡/g 이하인 산화 주석을 사용하는 것을 특징으로 하는 ITO소결체의 제조법.
  8. BET 표면적이 3㎡/g 이하인 산화 주석과 산화 인듐을 혼합 성형 및 소결하여 이루어지는 IT0 소결체의 제조법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019930016152A 1992-08-19 1993-08-19 고밀도 아이티오 소결체 아이티오 타겟 및 그의 제조방법 KR100205556B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP92-241396 1992-08-19
JP4241396A JPH0664959A (ja) 1992-08-19 1992-08-19 Ｉｔｏ焼結体
JP4336161A JPH06183731A (ja) 1992-12-16 1992-12-16 Ｉｔｏ焼結体の製造方法
JP92-336161 1992-12-16
JP92-345876 1992-12-25
JP34587692A JP3324164B2 (ja) 1992-12-25 1992-12-25 酸化インジウム粉末及びその製造方法並びにｉｔｏ焼結体の製造方法

Publications (2)

Publication Number Publication Date
KR940003643A true KR940003643A (ko) 1994-03-12
KR100205556B1 KR100205556B1 (ko) 1999-07-01

Family

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KR1019930016152A KR100205556B1 (ko) 1992-08-19 1993-08-19 고밀도 아이티오 소결체 아이티오 타겟 및 그의 제조방법

Country Status (4)

Country Link
US (1) US5401701A (ko)
EP (1) EP0584672B1 (ko)
KR (1) KR100205556B1 (ko)
DE (1) DE69303126T2 (ko)

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KR100450186B1 (ko) * 1996-11-08 2004-11-20 도와 고교 가부시키가이샤 아이티오의 원료분말과 소결체 및 그 제조방법

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DE4427060C1 (de) * 1994-07-29 1995-11-30 Heraeus Gmbh W C Bauteil aus Indium-Zinn-Oxid und Verfahren für seine Herstellung
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JP3585033B2 (ja) * 2000-04-29 2004-11-04 喜萬 中山 カーボンナノコイル生成用のインジウム・スズ・鉄系触媒の製造方法
KR100455280B1 (ko) * 2000-06-28 2004-11-08 삼성코닝 주식회사 인듐 틴 옥사이드(ｉｔｏ)의 제조방법
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KR100474846B1 (ko) * 2002-03-22 2005-03-09 삼성코닝 주식회사 인듐산화물 분말 및 인듐 주석 산화물 타겟의 제조방법
US7799312B2 (en) * 2002-03-22 2010-09-21 Samsung Corning Precision Glass Co., Ltd. Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor
TWI385139B (zh) * 2005-02-01 2013-02-11 Tosoh Corp A sintered body, a sputtering target and a forming die, and a sintered body manufacturing method using the same
JP4984204B2 (ja) 2005-03-22 2012-07-25 Ｄｏｗａエレクトロニクス株式会社 酸化インジウム粉末およびその製造方法
CN104603320B (zh) * 2012-08-31 2017-04-05 株式会社钟化 带透明电极的基板的制造方法、以及带透明电极的基板
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CN107188556A (zh) * 2017-06-13 2017-09-22 江苏比昂电子材料有限公司 一种高纯度ito靶材的制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100450186B1 (ko) * 1996-11-08 2004-11-20 도와 고교 가부시키가이샤 아이티오의 원료분말과 소결체 및 그 제조방법

Also Published As

Publication number Publication date
EP0584672A1 (en) 1994-03-02
DE69303126T2 (de) 1996-11-28
DE69303126D1 (de) 1996-07-18
KR100205556B1 (ko) 1999-07-01
US5401701A (en) 1995-03-28
EP0584672B1 (en) 1996-06-12

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