TW324744B - Target for cathodic sputtering and method for producing the target - Google Patents
Target for cathodic sputtering and method for producing the targetInfo
- Publication number
- TW324744B TW324744B TW085108492A TW85108492A TW324744B TW 324744 B TW324744 B TW 324744B TW 085108492 A TW085108492 A TW 085108492A TW 85108492 A TW85108492 A TW 85108492A TW 324744 B TW324744 B TW 324744B
- Authority
- TW
- Taiwan
- Prior art keywords
- target
- pressing
- indium oxide
- hot
- tin oxide
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19530364 | 1995-08-18 | ||
DE19540379A DE19540379C1 (de) | 1995-08-18 | 1995-10-30 | Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets |
Publications (1)
Publication Number | Publication Date |
---|---|
TW324744B true TW324744B (en) | 1998-01-11 |
Family
ID=7769768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085108492A TW324744B (en) | 1995-08-18 | 1996-07-12 | Target for cathodic sputtering and method for producing the target |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100274094B1 (zh) |
DE (2) | DE19540379C1 (zh) |
TW (1) | TW324744B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19721649C2 (de) * | 1997-05-23 | 2003-02-20 | Heraeus Gmbh W C | Verfahren zur Herstellung eines Mischkristallpulvers mit geringem spezifischen elektrischen Widerstand |
FR2839506B1 (fr) * | 2002-05-10 | 2005-06-10 | Michelle Paparone Serole | Oxyde mixte d'indium etain dit ito a grande conductivite electrique a nanostructure |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3300525A1 (de) * | 1983-01-10 | 1984-07-12 | Merck Patent Gmbh, 6100 Darmstadt | Targets fuer die kathodenzerstaeubung |
JP2569774B2 (ja) * | 1988-11-22 | 1997-01-08 | 三菱マテリアル株式会社 | インジウム‐スズ酸化物焼結体の製造法 |
JPH03207858A (ja) * | 1990-01-08 | 1991-09-11 | Nippon Mining Co Ltd | Itoスパッタリングターゲットの製造方法 |
DE4124471C1 (en) * | 1991-07-24 | 1992-06-11 | Degussa Ag, 6000 Frankfurt, De | Target for cathodic sputtering - produced from partially reduced mixtures of indium oxide and tin oxide by hot pressing in inert protective gas |
EP0584672B1 (en) * | 1992-08-19 | 1996-06-12 | Tosoh Corporation | Method of manufacturing an indium oxide powder useful as material of a high-density ITO sintered body |
JPH06158308A (ja) * | 1992-11-24 | 1994-06-07 | Hitachi Metals Ltd | インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法 |
DE4407774C1 (de) * | 1994-03-09 | 1995-04-20 | Leybold Materials Gmbh | Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung |
-
1995
- 1995-10-30 DE DE19540379A patent/DE19540379C1/de not_active Expired - Fee Related
-
1996
- 1996-06-18 DE DE59607443T patent/DE59607443D1/de not_active Expired - Fee Related
- 1996-07-12 TW TW085108492A patent/TW324744B/zh not_active IP Right Cessation
- 1996-07-29 KR KR1019960030945A patent/KR100274094B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR970011013A (ko) | 1997-03-27 |
KR100274094B1 (ko) | 2000-12-15 |
DE59607443D1 (de) | 2001-09-13 |
DE19540379C1 (de) | 1996-09-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |