TW324744B - Target for cathodic sputtering and method for producing the target - Google Patents

Target for cathodic sputtering and method for producing the target

Info

Publication number
TW324744B
TW324744B TW085108492A TW85108492A TW324744B TW 324744 B TW324744 B TW 324744B TW 085108492 A TW085108492 A TW 085108492A TW 85108492 A TW85108492 A TW 85108492A TW 324744 B TW324744 B TW 324744B
Authority
TW
Taiwan
Prior art keywords
target
pressing
indium oxide
hot
tin oxide
Prior art date
Application number
TW085108492A
Other languages
Chinese (zh)
Inventor
Goy Karl-Heinz
Francis Lupton David
Schielke Jorg
Scholz Friedhold
Serole Bernard
Bohmeier Hans
Original Assignee
Heraeus Gmbh W C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Gmbh W C filed Critical Heraeus Gmbh W C
Application granted granted Critical
Publication of TW324744B publication Critical patent/TW324744B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Powder Metallurgy (AREA)

Abstract

A target for cathodic sputtering, which comprises a formation formed by hot-pressing or hot isostatic-pressing of indium oxide/tin oxide powder with a minimum density of 95% of the theoretical density and with a sub-stoichiometric oxygen content, in which the improvements comprise that the target comprises a minimum of 97 wt% of crystalline phase, in which the crystalline phase is formed as a solid solution of indium oxide and tin oxide, the solid solution phase exists in the molecule lattice of indium oxide, the solid melt phase is produced by hot-pressing or hot isostatic-pressing of indium oxide/tin oxide powder, and its oxygen content decreases from the outside to the inside, and the powder comprises an average crystal particle size range of from 2 microns to 20 microns.
TW085108492A 1995-08-18 1996-07-12 Target for cathodic sputtering and method for producing the target TW324744B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19530364 1995-08-18
DE19540379A DE19540379C1 (en) 1995-08-18 1995-10-30 Target for cathodic sputtering, used in LCD mfr.

Publications (1)

Publication Number Publication Date
TW324744B true TW324744B (en) 1998-01-11

Family

ID=7769768

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085108492A TW324744B (en) 1995-08-18 1996-07-12 Target for cathodic sputtering and method for producing the target

Country Status (3)

Country Link
KR (1) KR100274094B1 (en)
DE (2) DE19540379C1 (en)
TW (1) TW324744B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19721649C2 (en) * 1997-05-23 2003-02-20 Heraeus Gmbh W C Method for producing a mixed crystal powder with low specific electrical resistance
FR2839506B1 (en) * 2002-05-10 2005-06-10 Michelle Paparone Serole INDIUM MIXED OXIDE TIN ITO WITH HIGH ELECTRICAL CONDUCTIVITY TO NANOSTRUCTURE

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3300525A1 (en) * 1983-01-10 1984-07-12 Merck Patent Gmbh, 6100 Darmstadt TARGETS FOR CATHOD SPRAYING
JP2569774B2 (en) * 1988-11-22 1997-01-08 三菱マテリアル株式会社 Manufacturing method of indium-tin oxide sintered body
JPH03207858A (en) * 1990-01-08 1991-09-11 Nippon Mining Co Ltd Production of ito sputtering target
DE4124471C1 (en) * 1991-07-24 1992-06-11 Degussa Ag, 6000 Frankfurt, De Target for cathodic sputtering - produced from partially reduced mixtures of indium oxide and tin oxide by hot pressing in inert protective gas
EP0584672B1 (en) * 1992-08-19 1996-06-12 Tosoh Corporation Method of manufacturing an indium oxide powder useful as material of a high-density ITO sintered body
JPH06158308A (en) * 1992-11-24 1994-06-07 Hitachi Metals Ltd Target for sputtering for indium-tin oxide film and its production
DE4407774C1 (en) * 1994-03-09 1995-04-20 Leybold Materials Gmbh Target for cathode sputtering to produce transparent, conductive layers, and method for the fabrication thereof

Also Published As

Publication number Publication date
KR970011013A (en) 1997-03-27
KR100274094B1 (en) 2000-12-15
DE59607443D1 (en) 2001-09-13
DE19540379C1 (en) 1996-09-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees