TW285763B - - Google Patents

Info

Publication number: TW285763B
Authority: TW; Taiwan

Application number

TW84100059A

Other languages

Chinese (zh)

Original Assignee

Mitsubishi Electric Machine

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-12-08

Filing date

1995-01-06

Publication date

1996-09-11

1995-01-06 Application filed by Mitsubishi Electric Machine filed Critical Mitsubishi Electric Machine

1996-09-11 Application granted granted Critical

1996-09-11 Publication of TW285763B publication Critical patent/TW285763B/zh

Links

TW84100059A 1994-12-08 1995-01-06 TW285763B (ja)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP30504694A JP3384896B2 (ja)	1994-12-08	1994-12-08	半導体装置およびその製造方法

Publications (1)

Publication Number	Publication Date
TW285763B true TW285763B (ja)	1996-09-11

Family

ID=17940466

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW84100059A TW285763B (ja)	1994-12-08	1995-01-06

Country Status (2)

Country	Link
JP (1)	JP3384896B2 (ja)
TW (1)	TW285763B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN103633007A (zh) *	2012-08-17	2014-03-12	上海华虹宏力半导体制造有限公司	防止浅沟槽隔离边缘硅接触孔漏电的方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3941133B2 (ja)	1996-07-18	2007-07-04	富士通株式会社	半導体装置およびその製造方法
KR100236067B1 (ko) *	1996-09-02	1999-12-15	김영환	반도체 메모리 소자 제조방법
JP2000058782A (ja)	1998-08-06	2000-02-25	Mitsubishi Electric Corp	半導体装置およびその製造方法
JP2000077520A (ja)	1998-08-28	2000-03-14	Fujitsu Ltd	半導体装置の製造方法
KR100451759B1 (ko) *	1998-11-10	2004-11-16	주식회사 하이닉스반도체	반도체소자제조방법
JP3205306B2 (ja)	1998-12-08	2001-09-04	松下電器産業株式会社	半導体装置およびその製造方法
JP4602818B2 (ja) *	2005-03-30	2010-12-22	富士通セミコンダクター株式会社	半導体装置の製造方法
JP5003743B2 (ja) *	2009-10-20	2012-08-15	富士通セミコンダクター株式会社	半導体装置とその製造方法

1994
- 1994-12-08 JP JP30504694A patent/JP3384896B2/ja not_active Expired - Fee Related
1995
- 1995-01-06 TW TW84100059A patent/TW285763B/zh active

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN103633007A (zh) *	2012-08-17	2014-03-12	上海华虹宏力半导体制造有限公司	防止浅沟槽隔离边缘硅接触孔漏电的方法

Also Published As

Publication number	Publication date
JPH08162635A (ja)	1996-06-21
JP3384896B2 (ja)	2003-03-10

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