Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW83103191ApriorityCriticalpatent/TW283797B/en
Application grantedgrantedCritical
Publication of TW283797BpublicationCriticalpatent/TW283797B/en
A multiple local oxidation of silicon comprises: forming one SiO2 layer on one substrate surface; depositing one Si3N4 layer covering the SiO2 layer; forming opening with first size on the SiO2 layer and Si3N4 layer, and exposing the substrate where is about to be oxidized; growing field oxide field in the opening with first size; forming opening with second size on the SiO2 layer and Si3N4 layer, and exposing the substrate where is about to be oxidized, in which the second size is larger than the first one's; growing field oxide region in the opening with second size, in which the thickness of field oxide region in opening with first size is increased; and removing the Si3N4 layer and the SiO2 layer, thereby completing local oxidation of the silicon.
TW83103191A1994-04-111994-04-11Multiple local oxidation of silicon
TW283797B
(en)