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Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
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Abstract
A process of gate oxide with different thickness, which is applicable to a Si substrate, includes: (1) forming field oxide on the predetermined position on the Si substrate, and defining multiple first active regions and multiple second active regions on the field oxide; (2) forming one first gate oxide on the first active region and the second active region; (3) forming a screening covering the first gate oxide on the first active region, and with the screening as mask removing the first gate oxide on the second active region; (4) forming one second gate oxide on the second active region, then removing the screening layer to complete the process of gate oxide with different thickness.
TW83111379A1994-12-071994-12-07Process of gate oxide
TW255050B
(en)