TW280085B - - Google Patents

Info

Publication number
TW280085B
TW280085B TW084109679A TW84109679A TW280085B TW 280085 B TW280085 B TW 280085B TW 084109679 A TW084109679 A TW 084109679A TW 84109679 A TW84109679 A TW 84109679A TW 280085 B TW280085 B TW 280085B
Authority
TW
Taiwan
Application number
TW084109679A
Original Assignee
Hitachi Seisakusyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Seisakusyo Kk filed Critical Hitachi Seisakusyo Kk
Application granted granted Critical
Publication of TW280085B publication Critical patent/TW280085B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cold Cathode And The Manufacture (AREA)
TW084109679A 1994-11-04 1995-09-15 TW280085B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29368894A JP3799073B2 (ja) 1994-11-04 1994-11-04 ドライエッチング方法

Publications (1)

Publication Number Publication Date
TW280085B true TW280085B (zh) 1996-07-01

Family

ID=17797951

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084109679A TW280085B (zh) 1994-11-04 1995-09-15

Country Status (9)

Country Link
US (2) US6231777B1 (zh)
EP (1) EP0710977B1 (zh)
JP (1) JP3799073B2 (zh)
KR (1) KR100389642B1 (zh)
CN (1) CN1069439C (zh)
DE (1) DE69515593T2 (zh)
MY (1) MY115990A (zh)
SG (1) SG32522A1 (zh)
TW (1) TW280085B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI811587B (zh) * 2019-12-09 2023-08-11 大陸商中微半導體設備（上海）股份有限公司 等離子體處理設備以及等離子體處理方法

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US6253704B1 (en) * 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6902683B1 (en) * 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6258287B1 (en) * 1996-08-28 2001-07-10 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment
JPH10150025A (ja) 1996-11-20 1998-06-02 Mitsubishi Electric Corp プラズマ反応装置
JPH10335314A (ja) * 1997-06-05 1998-12-18 Mitsubishi Electric Corp プラズマ処理装置及び基板処理方法
EP0977246A3 (en) * 1998-07-31 2005-11-09 Canon Kabushiki Kaisha Production process of semiconductor layer, fabrication process of photovoltaic cell and production apparatus of semiconductor layer
KR100521121B1 (ko) * 1998-09-10 2005-10-12 가부시끼가이샤 히다치 세이사꾸쇼 시료표면의 처리방법 및 시료표면의 처리장치
EP1131847B1 (en) * 1998-11-04 2010-02-17 Surface Technology Systems Plc A method for etching a substrate
JP4334723B2 (ja) * 2000-03-21 2009-09-30 新明和工業株式会社 イオンプレーティング成膜装置、及びイオンプレーティング成膜方法。
US20030094239A1 (en) * 2000-06-02 2003-05-22 Quon Bill H. Apparatus and method for improving electron ecceleration
KR100345666B1 (ko) * 2000-07-31 2002-07-24 주식회사 하이닉스반도체 플라즈마의 전자온도 감소를 이용한 강유전체 소자의 열화감소 방법
US6544895B1 (en) * 2000-08-17 2003-04-08 Micron Technology, Inc. Methods for use of pulsed voltage in a plasma reactor
US6485572B1 (en) 2000-08-28 2002-11-26 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
CN1311508C (zh) * 2000-11-20 2007-04-18 瓦里安半导体设备联合公司 用于产生低能量离子束的离子光学装置和方法
KR100733405B1 (ko) * 2000-12-28 2007-06-29 주식회사 하이닉스반도체 디씨 바이어스 조절을 이용한 반도체소자의 식각방법
US6638833B1 (en) 2001-03-09 2003-10-28 Stmicroelectronics S.R.L. Process for the fabrication of integrated devices with reduction of damage from plasma
US20030003748A1 (en) * 2001-05-24 2003-01-02 Anisul Khan Method of eliminating notching when anisotropically etching small linewidth openings in silicon on insulator
DE10309711A1 (de) * 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
US6846747B2 (en) * 2002-04-09 2005-01-25 Unaxis Usa Inc. Method for etching vias
US6905626B2 (en) * 2002-07-24 2005-06-14 Unaxis Usa Inc. Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
US7109122B2 (en) * 2002-11-29 2006-09-19 Tokyo Electron Limited Method and apparatus for reducing substrate charging damage
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
DE102004043233B4 (de) * 2003-09-10 2014-02-13 Denso Corporation Verfahren zum Herstellen eines beweglichen Abschnitts einer Halbleitervorrichtung
GB2417251A (en) * 2004-08-18 2006-02-22 Nanofilm Technologies Int Removing material from a substrate surface using plasma
KR100668956B1 (ko) * 2004-12-22 2007-01-12 동부일렉트로닉스 주식회사 반도체 제조 방법
US7879510B2 (en) 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7790334B2 (en) 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP4593402B2 (ja) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
JP4559973B2 (ja) * 2006-01-13 2010-10-13 富士通セミコンダクター株式会社 半導体装置の製造方法
US7786019B2 (en) 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
US7771606B2 (en) * 2007-02-22 2010-08-10 Applied Materials, Inc. Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures
US7737042B2 (en) * 2007-02-22 2010-06-15 Applied Materials, Inc. Pulsed-plasma system for etching semiconductor structures
US7718538B2 (en) * 2007-02-21 2010-05-18 Applied Materials, Inc. Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
US8475634B2 (en) * 2007-10-26 2013-07-02 OC Oerlikon Balzers AF Application of HIPIMS to through silicon via metallization in three-dimensional wafer packaging
US9059116B2 (en) 2007-11-29 2015-06-16 Lam Research Corporation Etch with pulsed bias
WO2009073361A1 (en) * 2007-11-29 2009-06-11 Lam Research Corporation Pulsed bias plasma process to control microloading
JP5864879B2 (ja) 2011-03-31 2016-02-17 東京エレクトロン株式会社 基板処理装置及びその制御方法
KR101328800B1 (ko) * 2011-09-08 2013-11-13 성균관대학교산학협력단 다중 주파수의 ｒｆ 펄스 파워를 이용한 펄스 플라즈마의 특성 제어 방법
CN105269413B (zh) * 2015-09-25 2018-01-16 安庆市凯立金刚石科技有限公司 一种金刚石膜抛光方法
JP6114370B2 (ja) * 2015-12-24 2017-04-12 東京エレクトロン株式会社 基板処理装置及びその制御方法
JP6945388B2 (ja) 2017-08-23 2021-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
KR102550393B1 (ko) * 2017-10-25 2023-06-30 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 장치의 제조 방법
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3616405A (en) * 1969-10-03 1971-10-26 Int Plasma Corp Continuous sputtering system
JPS55150604A (en) * 1979-05-14 1980-11-22 Trio Kenwood Corp Power amplifier
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
US4464223A (en) 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
JPS60126832A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd ドライエツチング方法および装置
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JPS63243265A (ja) * 1987-03-31 1988-10-11 Hitachi Cable Ltd 高周波型イオンプレ−テイング装置
US5103367A (en) 1987-05-06 1992-04-07 Unisearch Limited Electrostatic chuck using A.C. field excitation
JPH0786441B2 (ja) * 1988-05-26 1995-09-20 横河電機株式会社 振動形トランスデューサの製造方法
US5223337A (en) * 1988-12-10 1993-06-29 Fried. Krupp Gmbh Tool produced by a plasma-activated CVD process
EP0395415B1 (en) 1989-04-27 1995-03-15 Fujitsu Limited Apparatus for and method of processing a semiconductor device using microwave-generated plasma
US4992719A (en) * 1989-07-24 1991-02-12 Hughes Aircraft Company Stable high voltage pulse power supply
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
JP2775345B2 (ja) * 1989-12-15 1998-07-16 キヤノン株式会社 プラズマ処理法及びプラズマ処理装置
JP3080385B2 (ja) * 1990-03-12 2000-08-28 株式会社日立製作所 マイクロ波発生装置及びプラズマ処理装置
JPH04180569A (ja) * 1990-11-13 1992-06-26 Ishikawajima Harima Heavy Ind Co Ltd プラズマｃｖｄ装置の制御方法
JPH04304377A (ja) * 1991-04-01 1992-10-27 Ishikawajima Harima Heavy Ind Co Ltd ダイアモンド薄膜生成方法および装置
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
KR100292851B1 (ko) * 1991-09-27 2001-09-17 스콧 티. 마이쿠엔 높은얼리전압,고주파성능및고항복전압특성을구비한상보형바이폴라트랜지스터및그제조방법
WO1993018201A1 (en) * 1992-03-02 1993-09-16 Varian Associates, Inc. Plasma implantation process and equipment
JPH0772342B2 (ja) * 1992-06-18 1995-08-02 栄電子工業株式会社 イオンプレーティング加工方法
JP2941572B2 (ja) 1992-08-11 1999-08-25 三菱電機株式会社 プラズマエッチング装置及び半導体装置の製造方法
KR100276093B1 (ko) * 1992-10-19 2000-12-15 히가시 데쓰로 플라스마 에칭방법
JP3351843B2 (ja) * 1993-02-24 2002-12-03 忠弘 大見 成膜方法
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
US5648293A (en) * 1993-07-22 1997-07-15 Nec Corporation Method of growing an amorphous silicon film
DE69426003T2 (de) * 1993-07-28 2001-05-17 Asahi Glass Co Ltd Verfahren und Vorrichtung zur Kathodenzerstäubung
US5892264A (en) * 1993-10-04 1999-04-06 Harris Corporation High frequency analog transistors, method of fabrication and circuit implementation
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode
JP3278732B2 (ja) * 1993-12-27 2002-04-30 株式会社アルバック エッチング装置及びエッチング方法
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5661043A (en) * 1994-07-25 1997-08-26 Rissman; Paul Forming a buried insulator layer using plasma source ion implantation
US5841623A (en) * 1995-12-22 1998-11-24 Lam Research Corporation Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system
US5812362A (en) * 1996-06-14 1998-09-22 Applied Materials, Inc. Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI811587B (zh) * 2019-12-09 2023-08-11 大陸商中微半導體設備（上海）股份有限公司 等離子體處理設備以及等離子體處理方法

Also Published As

Publication number Publication date
CN1069439C (zh) 2001-08-08
CN1132407A (zh) 1996-10-02
EP0710977B1 (en) 2000-03-15
KR960019567A (ko) 1996-06-17
US6332425B1 (en) 2001-12-25
SG32522A1 (en) 1996-08-13
JPH08139077A (ja) 1996-05-31
KR100389642B1 (ko) 2003-10-08
DE69515593T2 (de) 2000-11-23
EP0710977A1 (en) 1996-05-08
US6231777B1 (en) 2001-05-15
MY115990A (en) 2003-10-31
JP3799073B2 (ja) 2006-07-19
DE69515593D1 (de) 2000-04-20

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