TW202247910A - Coating method and coating device - Google Patents

Coating method and coating device Download PDF

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TW202247910A
TW202247910A TW111114272A TW111114272A TW202247910A TW 202247910 A TW202247910 A TW 202247910A TW 111114272 A TW111114272 A TW 111114272A TW 111114272 A TW111114272 A TW 111114272A TW 202247910 A TW202247910 A TW 202247910A
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substrate
coating
time point
liquid
rotation speed
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TW111114272A
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TWI819570B (en
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熊田雄介
徐飛
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日商斯庫林集團股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/0208—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work for applying liquid or other fluent material to separate articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

The substrate of the present invention has an upper surface and a lower surface, and an annular protrusion formed on the upper surface, wherein the substrate is held in a horizontal state. The upper surface of the substrate is supplied with coating liquid. During or after the supply of the coating liquid, the coating liquid is spread over the entire upper surface by rotating the substrate around the vertical axis. Then, the substrate is dried by rotating the substrate around the vertical axis. While drying the substrate, the substrate is rotating in the first rotational speed between the first time point and the second time point after the first time point; and, the substrate is rotating in the second rotational speed higher than the first rotational speed between the second time point and the third time point after the second time point.

Description

塗佈處理方法及塗佈處理裝置Coating treatment method and coating treatment device

本發明係關於一種於基板形成塗佈膜之塗佈處理方法及塗佈處理裝置。The invention relates to a coating treatment method and a coating treatment device for forming a coating film on a substrate.

為對半導體基板、液晶顯示裝置或有機EL(Electro Luminescence：電致發光)顯示裝置等FPD(Flat Panel Display：平板顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板或太陽能電池用基板等基板進行各種處理，而使用基板處理裝置。For semiconductor substrates, liquid crystal display devices or organic EL (Electro Luminescence: electroluminescence: electroluminescence) display devices such as FPD (Flat Panel Display: Flat Panel Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, A substrate processing apparatus is used for various processing of substrates such as cover substrates, ceramic substrates, and solar cell substrates.

作為基板處理裝置之一例，有於基板之上表面形成抗蝕劑膜或防反射膜等塗佈膜之塗佈處理裝置。於塗佈處理裝置中，藉由旋轉卡盤將例如一張基板以水平姿勢保持。又，藉由旋轉卡盤保持之基板旋轉。對旋轉之基板之上表面，供給與應形成之塗佈膜之種類對應之塗佈液。供給至基板上之塗佈液由離心力擴展至基板之上表面整體。藉由基板上之塗佈液乾燥而形成塗佈膜。As an example of a substrate processing apparatus, there is a coating processing apparatus for forming a coating film such as a resist film or an antireflection film on the upper surface of a substrate. In a coating processing apparatus, for example, one substrate is held in a horizontal posture by a spin chuck. Also, the substrate held by the spin chuck is rotated. A coating solution corresponding to the type of coating film to be formed is supplied to the upper surface of the rotating substrate. The coating liquid supplied to the substrate spreads to the entire upper surface of the substrate by centrifugal force. A coating film is formed by drying the coating liquid on the substrate.

為減少塗佈處理所需要之成本，而期望減少每一張基板所使用之塗佈液之量。又，即使於每一張基板所使用之塗佈液之量比較少之情形時，亦期望於基板之一面均一地形成塗佈膜。考慮該等點，於例如日本專利特開2010-212658號公報所記載之抗蝕劑塗佈方法中，於開始對基板供給抗蝕劑液後，基板之轉速隨著時間之經過變更為複數個級別。於基板上塗抹抗蝕劑液後，為使抗蝕劑液乾燥，基板於特定期間以一定之轉速旋轉。In order to reduce the cost required for the coating process, it is desired to reduce the amount of coating liquid used for each substrate. In addition, even when the amount of the coating liquid used per substrate is relatively small, it is desirable to form a coating film uniformly on one surface of the substrate. Considering these points, for example, in the resist coating method described in Japanese Patent Application Laid-Open No. 2010-212658, after the supply of the resist liquid to the substrate is started, the rotation speed of the substrate is changed to a plurality of times with the passage of time. level. After applying the resist solution on the substrate, the substrate is rotated at a certain speed for a specific period of time in order to dry the resist solution.

近年來，為實現半導體器件之小型化及輕量化，而推進基板之薄型化。難以處理明顯薄型化之基板。對此，已知有於具有大致圓形狀之基板之一面，具有沿該基板之外周端部之圓環狀之凸部之基板(參照例如日本專利特開2012-146889號公報)。該基板將圓環狀之凸部作為補強部發揮功能，藉此處理性提高。In recent years, in order to achieve miniaturization and weight reduction of semiconductor devices, thinning of substrates has been promoted. Difficult to handle significantly thinner substrates. In this regard, there is known a substrate having an annular protrusion along the outer peripheral end of the substantially circular substrate on one surface thereof (see, for example, Japanese Patent Application Laid-Open No. 2012-146889 ). This substrate functions as a reinforcing part by the ring-shaped convex part, thereby improving performance.

上述基板之一面中，於圓環狀之凸部之內側形成落差。因此，於基板之一面上形成塗佈膜之塗佈處理中，若於圓環狀之凸部之內周端部殘留塗佈液，則有因殘留之塗佈液導致產生基板之處理不良之可能性。或，有因殘留之塗佈液導致產生粒子之可能性。In one surface of the above-mentioned substrate, a drop is formed inside the annular protrusion. Therefore, in the coating process for forming a coating film on one surface of the substrate, if the coating liquid remains on the inner peripheral end of the annular convex portion, the processing defect of the substrate may occur due to the remaining coating liquid. possibility. Or, there is a possibility of particle generation due to residual coating liquid.

本發明之目的在於提供一種可防止起因於不需要之塗佈液殘留於基板上產生之基板之處理不良及基板之污染之塗佈處理方法及塗佈處理裝置。An object of the present invention is to provide a coating treatment method and a coating treatment apparatus capable of preventing poor handling of a substrate and contamination of a substrate caused by unnecessary coating liquid remaining on a substrate.

(1)依照本發明之一態樣之塗佈處理方法係於至少一部分具有圓形狀之外周部之基板形成塗佈膜之塗佈處理方法，且基板具有相互面向反方向之第1面及第2面，於第1面，形成向與該第1面正交之方向突出且沿外周部延伸之圓環狀之凸部，塗佈處理方法包含以下步驟：以第1面面向上方之方式以水平姿勢保持基板；對第1面供給塗佈液，藉由於塗佈液之供給中或供給後使以水平姿勢保持之基板繞鉛直軸旋轉而將塗佈液擴展至該第1面整體；及於擴展塗佈液之步驟之後，藉由使以水平姿勢保持之基板繞鉛直軸旋轉而使基板乾燥；且使基板乾燥之步驟包含：於第1時點至第1時點之後之第2時點之間，使基板以第1轉速旋轉；及於第2時點至第2時點之後之第3時點之間，使基板以高於第1轉速之第2轉速旋轉。(1) The coating treatment method according to one aspect of the present invention is a coating treatment method for forming a coating film on at least a part of a substrate having a circular outer peripheral portion, and the substrate has a first surface and a first surface facing in opposite directions. 2. On the first surface, an annular protrusion protruding in a direction perpendicular to the first surface and extending along the outer periphery is formed. The coating treatment method includes the following steps: with the first surface facing upward, maintaining the substrate in a horizontal posture; supplying the coating liquid to the first surface, and spreading the coating liquid to the entire first surface by rotating the substrate held in a horizontal posture around a vertical axis during or after the supply of the coating liquid; and After the step of spreading the coating liquid, the substrate is dried by rotating the substrate held in a horizontal posture around a vertical axis; and the step of drying the substrate includes: between the first time point and the second time point after the first time point , rotating the substrate at a first rotational speed; and rotating the substrate at a second rotational speed higher than the first rotational speed between the second time point and a third time point after the second time point.

於該塗佈處理方法中，基板以第1面面向上方之方式以水平姿勢保持。又，對第1面供給塗佈液。再者，基板於塗佈液之供給中或供給後旋轉，使塗佈液擴展至第1面整體。於塗佈液擴展至第1面整體之後，為使基板乾燥，基板自第1時點至第2時點以第1轉速旋轉。藉此，位於基板之中央部分且具有流動性之塗佈液向基板之外周部移動。因此，基板之第1面之中央部分乾燥。In this coating treatment method, the substrate is held in a horizontal posture with the first surface facing upward. Also, the coating liquid is supplied to the first surface. Furthermore, the substrate is rotated during or after the supply of the coating liquid to spread the coating liquid over the entire first surface. After the coating liquid spreads over the entire first surface, the substrate is rotated at the first rotation speed from the first time point to the second time point in order to dry the substrate. Thereby, the fluid coating liquid located at the central portion of the substrate moves toward the outer periphery of the substrate. Therefore, the central portion of the first surface of the substrate is dried.

接著，基板自第2時點至第3時點以高於第1轉速之第2轉速旋轉。於該情形時，對在基板之外周部及其附近流動之塗佈液作用更大之離心力。又，於包圍基板之空間，產生更大之氣流。藉此，於第1面上自基板之中心向外周部流動之塗佈液之大部分自圓環狀之凸部之內側區域向基板之外側飛散。換言之，於第1面上導向圓環狀之凸部之內緣之不需要之塗佈液甩開至基板之外側。Next, the substrate is rotated at a second rotation speed higher than the first rotation speed from the second to the third timing. In this case, a larger centrifugal force acts on the coating liquid flowing on and near the outer periphery of the substrate. Also, a larger airflow is generated in the space surrounding the substrate. As a result, most of the coating liquid flowing from the center of the substrate to the outer periphery on the first surface scatters from the inner region of the annular protrusion to the outer side of the substrate. In other words, the unnecessary coating liquid guided to the inner edge of the annular protrusion on the first surface is thrown off to the outside of the substrate.

其結果，可防止起因於塗佈處理時不需要之塗佈液殘留於基板上而產生基板之處理不良及基板之污染。As a result, it is possible to prevent poor handling of the substrate and contamination of the substrate caused by unnecessary coating liquid remaining on the substrate during the coating process.

(2)塗佈處理方法亦可進而包含於使基板乾燥之步驟之後，使基板以低於第1轉速之第3轉速旋轉，且對第2面供給清洗液之步驟。(2) The coating treatment method may further include, after the step of drying the substrate, the step of rotating the substrate at a third rotation speed lower than the first rotation speed, and supplying a cleaning solution to the second surface.

於該情形時，與對以第1轉速旋轉之基板供給清洗液之情形相比，可減少自基板飛散之清洗液之量。藉此，可防止由於對第1面附著清洗液而產生處理不良。In this case, compared with the case where the cleaning liquid is supplied to the substrate rotating at the first rotational speed, the amount of cleaning liquid scattered from the substrate can be reduced. Thereby, it is possible to prevent processing failure due to cleaning liquid adhering to the first surface.

(3)第2時點亦可規定為擴展於第1面上之塗佈液中第1面之中央區域所存在之部分為乾燥且包圍第1面之中央區域之區域上所存在之部分為流動之狀態之期間內。(3) At the second point of time, the part existing in the central region of the first surface of the coating liquid spread on the first surface is dry and the part existing in the area surrounding the central region of the first surface is fluid during the period of the state.

於該情形時，於使基板乾燥時，自第2時點至第3時點包圍第1面之中央區域之區域所存在之塗佈液被順滑甩開。In this case, when the substrate is dried, the coating liquid present in the area surrounding the central area of the first surface from the second to the third time is smoothly thrown off.

(4)第2時點亦可規定為經過第1時點後供給至第1面之塗佈液之表面所產生之干涉條紋消失之前之時點。(4) The second time point may be defined as the time point before the interference fringes generated on the surface of the coating liquid supplied to the first surface disappear after the first time point has passed.

於該情形時，於干涉條紋消失之前基板開始第2轉速之旋轉。藉此，存在於基板之外周部及其附近且具有流動性之塗佈液被順滑甩開。In this case, the substrate starts to rotate at the second rotational speed before the interference fringes disappear. Thereby, the fluid coating liquid present on and around the outer periphery of the substrate is smoothly thrown off.

(5)第2轉速亦可高於第1轉速之2倍之轉速。(5) The second rotational speed may be twice as high as the first rotational speed.

於該情形時，對第1面上導向圓環狀之凸部之內緣之不需要之塗佈液作用更大之離心力。又，於包圍基板之空間產生更大之氣流。藉此，圓環狀之凸部之內側之不需要之塗佈液被更順滑地甩開至基板之外側。In this case, a larger centrifugal force acts on the unnecessary coating liquid guided to the inner edge of the annular convex portion on the first surface. Also, a larger airflow is generated in the space surrounding the substrate. Thereby, the unnecessary coating liquid on the inner side of the annular convex part is thrown off to the outer side of the substrate more smoothly.

(6)依照本發明之另一態樣之塗佈處理裝置係於至少一部分具有圓形狀之外周部之基板形成塗佈膜之塗佈處理裝置，且基板具有相互面向反方向之第1面及第2面，於第1面，形成向與該第1面正交之方向突出且沿外周部延伸之圓環狀之凸部，塗佈處理裝置具備：旋轉保持部，其以第1面面向上方之方式以水平姿勢保持基板且使其繞鉛直軸旋轉；塗佈液供給部，其對第1面供給塗佈液；及控制部，其以對第1面供給塗佈液之方式控制塗佈液供給部，以藉由塗佈液之供給中或供給後以水平姿勢保持之基板繞鉛直軸旋轉，而使塗佈液擴展至該第1面整體之方式控制旋轉保持部；且控制部於塗佈液擴展至第1面整體之後，於第1時點至第1時點之後之第2時點之間，以水平姿勢保持之基板以第1轉速旋轉，於第2時點至第2時點之後之第3時點之間，以水平姿勢保持之基板以高於第1轉速之第2轉速旋轉，藉此基板乾燥，以此方式進一步控制旋轉保持部。(6) A coating processing device according to another aspect of the present invention is a coating processing device for forming a coating film on a substrate having at least a part of a circular outer peripheral portion, and the substrate has first surfaces facing opposite directions and On the second surface, on the first surface, an annular convex portion protruding in a direction perpendicular to the first surface and extending along the outer periphery is formed. The upper part holds the substrate in a horizontal posture and rotates it around a vertical axis; the coating liquid supply part supplies the coating liquid to the first surface; and the control part controls the coating by supplying the coating liquid to the first surface. The liquid distribution supply part controls the rotation holding part so that the coating liquid spreads over the entire first surface by rotating the substrate held in a horizontal posture during or after supplying the coating liquid around a vertical axis; and the control part After the coating liquid spreads to the entire first surface, between the first time point and the second time point after the first time point, the substrate held in a horizontal posture is rotated at the first rotational speed, and between the second time point and the second time point after the second time point Between the third time point, the substrate held in a horizontal posture is rotated at a second rotation speed higher than the first rotation speed, whereby the substrate is dried, and the rotation holding unit is further controlled in this way.

於該塗佈處理裝置中，基板以第1面面向上方之方式以水平姿勢保持。又，對第1面供給塗佈液。再者，基板於塗佈液之供給中或供給後旋轉，使塗佈液擴展至第1面整體。於塗佈液擴展至第1面整體之後，為使基板乾燥，基板自第1時點至第2時點以第1轉速旋轉。藉此，位於基板之中央部分且具有流動性之塗佈液向基板之外周部移動。因此，基板之第1面之中央部分乾燥。In this coating processing apparatus, the substrate is held in a horizontal posture with the first surface facing upward. Also, the coating liquid is supplied to the first surface. Furthermore, the substrate is rotated during or after the supply of the coating liquid to spread the coating liquid over the entire first surface. After the coating liquid spreads over the entire first surface, the substrate is rotated at the first rotation speed from the first time point to the second time point in order to dry the substrate. Thereby, the fluid coating liquid located at the central portion of the substrate moves toward the outer periphery of the substrate. Therefore, the central portion of the first surface of the substrate is dried.

接著，基板自第2時點至第3時點以高於第1轉速之第2轉速旋轉。於該情形時，對在基板之外周部及其附近流動之塗佈液作用更大之離心力。又，於包圍基板之空間，產生更大之氣流。藉此，於第1面上自基板之中心向外周部流動之塗佈液之大部分自圓環狀之凸部之內側區域向基板之外側飛散。換言之，於第1面上導向圓環狀之凸部之內緣之不需要之塗佈液甩開至基板之外側。Next, the substrate is rotated at a second rotation speed higher than the first rotation speed from the second to the third timing. In this case, a larger centrifugal force acts on the coating liquid flowing on and near the outer periphery of the substrate. Also, a larger airflow is generated in the space surrounding the substrate. As a result, most of the coating liquid flowing from the center of the substrate to the outer periphery on the first surface scatters from the inner region of the annular protrusion to the outer side of the substrate. In other words, the unnecessary coating liquid guided to the inner edge of the annular protrusion on the first surface is thrown off to the outside of the substrate.

其結果，可防止起因於塗佈處理時不需要之塗佈液殘留於基板上而產生基板之處理不良及基板之污染。As a result, it is possible to prevent poor handling of the substrate and contamination of the substrate caused by unnecessary coating liquid remaining on the substrate during the coating process.

(7)塗佈處理裝置亦可進而具備對第2面供給清洗液之清洗液供給部，控制部於基板藉由以第2轉速旋轉而乾燥之後，以基板以低於第1轉速之第3轉速旋轉之方式進一步控制旋轉保持部，且以對以第3轉速旋轉之基板之第2面供給清洗液之方式進一步控制清洗液供給部。(7) The coating processing device may further include a cleaning solution supply unit for supplying a cleaning solution to the second surface. After the substrate is dried by rotating the substrate at the second rotation speed, the control unit rotates the substrate at a third rotation speed lower than the first rotation speed. The rotation holding part is further controlled by rotating at a rotational speed, and the cleaning liquid supply part is further controlled in such a manner as to supply the cleaning liquid to the second surface of the substrate rotating at the third rotating speed.

於該情形時，與對以第1轉速旋轉之基板供給清洗液之情形相比，可減少自基板飛散之清洗液之量。藉此，可防止由於對第1面附著清洗液而產生處理不良。In this case, compared with the case where the cleaning liquid is supplied to the substrate rotating at the first rotational speed, the amount of cleaning liquid scattered from the substrate can be reduced. Thereby, it is possible to prevent processing failure due to cleaning liquid adhering to the first surface.

(8)第2時點亦可規定為擴展於第1面上之塗佈液中第1面之中央區域所存在之部分為乾燥且包圍第1面之中央區域之區域上所存在之部分為流動之狀態之期間內。(8) The second point of time can also be defined as the part existing in the central region of the first surface in the coating liquid spread on the first surface is dry and the part existing in the area surrounding the central region of the first surface is flow during the period of the state.

於該情形時，於使基板乾燥時，自第2時點至第3時點包圍第1面之中央區域之區域所存在之塗佈液被順滑甩開。In this case, when the substrate is dried, the coating liquid present in the area surrounding the central area of the first surface from the second to the third time is smoothly thrown off.

(9)第2時點亦可規定為經過第1時點後供給至第1面之塗佈液之表面所產生之干涉條紋消失之前之時點。(9) The second time point may be defined as the time point before the interference fringes generated on the surface of the coating liquid supplied to the first surface disappear after the first time point has passed.

於該情形時，於干涉條紋消失之前基板開始第2轉速之旋轉。藉此，存在於基板之外周部及其附近且具有流動性之塗佈液被順滑甩開。In this case, the substrate starts to rotate at the second rotational speed before the interference fringes disappear. Thereby, the fluid coating liquid present on and around the outer periphery of the substrate is smoothly thrown off.

(10)第2轉速亦可高於第1轉速之2倍之轉速。(10) The second rotational speed may be twice as high as the first rotational speed.

於該情形時，對第1面上導向圓環狀之凸部之內緣之不需要之塗佈液作用更大之離心力。又，於包圍基板之空間產生更大之氣流。藉此，圓環狀之凸部之內側之不需要之塗佈液被更順滑地甩開至基板之外側。In this case, a larger centrifugal force acts on the unnecessary coating liquid guided to the inner edge of the annular convex portion on the first surface. Also, a larger airflow is generated in the space surrounding the substrate. Thereby, the unnecessary coating liquid on the inner side of the annular convex part is thrown off to the outer side of the substrate more smoothly.

以下，參照圖式就本發明之一實施形態之塗佈處理方法及塗佈處理裝置進行說明。於以下之說明中，基板係指液晶顯示裝置或有機EL(Electro Luminescence)顯示裝置等所使用之FPD(Flat Panel Display)用基板、半導體基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板或太陽能電池用基板等。又，於本實施形態中，基板之上表面為電路形成面(表面)，基板之下表面為與電路形成面成相反側之面(背面)。再者，於本實施形態中，基板於俯視下去除缺口之形成部分外具有圓形狀。稍後對基板之形狀之細節進行敘述。Hereinafter, a coating treatment method and a coating treatment apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following descriptions, substrates refer to substrates for FPD (Flat Panel Display), semiconductor substrates, substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks used in liquid crystal display devices or organic EL (Electro Luminescence) display devices. Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, etc. Also, in this embodiment, the upper surface of the substrate is the circuit formation surface (surface), and the lower surface of the substrate is the surface (back surface) opposite to the circuit formation surface. Furthermore, in this embodiment, the board|substrate has a circular shape except the part where the notch was formed in planar view. Details of the shape of the substrate will be described later.

[1]塗佈處理裝置之整體構成 圖1係本發明之一實施形態之塗佈處理裝置之模式性剖視圖，圖2係圖1之塗佈處理裝置1之模式性俯視圖。於圖2中，省略圖1之塗佈處理裝置1之複數個構成要件中之一部分構成要件之圖示。又，以一點劃線顯示圖1之基板W。 [1] The overall structure of the coating processing device FIG. 1 is a schematic cross-sectional view of a coating processing device according to an embodiment of the present invention, and FIG. 2 is a schematic top view of the coating processing device 1 of FIG. 1 . In FIG. 2 , illustration of some of the constituent elements of the plurality of constituent elements of the coating processing apparatus 1 of FIG. 1 is omitted. In addition, the substrate W in FIG. 1 is shown by a one-dot chain line.

如圖1所示，本實施形態之塗佈處理裝置1主要具備旋轉保持裝置10、液體供給裝置20及控制部30。旋轉保持裝置10構成為可吸附保持基板W之下表面中央部且使其旋轉。As shown in FIG. 1 , the coating processing apparatus 1 of the present embodiment mainly includes a rotation holding device 10 , a liquid supply device 20 , and a control unit 30 . The rotation holding device 10 is configured to suck and hold the central portion of the lower surface of the substrate W and rotate it.

液體供給裝置20包含抗蝕劑噴嘴21、塗佈液供給系統22、溶劑噴嘴23及溶劑供給系統24。塗佈液供給系統22對抗蝕劑噴嘴21供給抗蝕劑液。抗蝕劑噴嘴21將供給之抗蝕劑液噴出至由旋轉保持裝置10吸附保持並旋轉之基板W之上表面。溶劑供給系統24對溶劑噴嘴23供給溶劑。溶劑噴嘴23將供給之溶劑噴出至由旋轉保持裝置10吸附保持之基板W之上表面。此處，作為供給至溶劑噴嘴23之溶劑，係使用可溶解藉由稍後敘述之塗佈處理形成於基板W上之抗蝕劑膜之溶劑。控制部30包含CPU(Central Processing Unit：中央運算處理裝置)及記憶體、或微型電腦，控制旋轉保持裝置10及液體供給裝置20之動作。The liquid supply device 20 includes a resist nozzle 21 , a coating liquid supply system 22 , a solvent nozzle 23 , and a solvent supply system 24 . The coating liquid supply system 22 supplies a resist liquid to the resist nozzle 21 . The resist nozzle 21 ejects the supplied resist liquid onto the upper surface of the substrate W which is sucked and held by the rotation holding device 10 and rotated. The solvent supply system 24 supplies solvent to the solvent nozzle 23 . The solvent nozzle 23 sprays the supplied solvent onto the upper surface of the substrate W sucked and held by the spin holding device 10 . Here, as the solvent supplied to the solvent nozzle 23, a solvent capable of dissolving a resist film formed on the substrate W by a coating process described later is used. The control unit 30 includes a CPU (Central Processing Unit: central processing unit) and a memory, or a microcomputer, and controls the operations of the rotation holding device 10 and the liquid supply device 20 .

就旋轉保持裝置10之具體構成進行說明。旋轉保持裝置10包含吸附保持部11、旋轉軸12、旋轉驅動部13、吸引裝置14、杯15、排液導管16、下表面噴嘴17及清洗液供給系統18。The specific configuration of the rotation holding device 10 will be described. The rotation holding device 10 includes a suction holding unit 11 , a rotation shaft 12 , a rotation driving unit 13 , a suction device 14 , a cup 15 , a drain conduit 16 , a bottom surface nozzle 17 , and a cleaning liquid supply system 18 .

吸附保持部11具有吸附保持基板W之下表面中央部之上表面11u，安裝於在上下方向延伸之旋轉軸12之上端部。於吸附保持部11之上表面11u，形成有多個吸引孔h(圖2)。旋轉驅動部13使旋轉軸12繞其軸心旋轉。The adsorption holding unit 11 has an upper surface 11u at the center portion of the lower surface of the substrate W for adsorption and holding, and is attached to the upper end portion of the rotating shaft 12 extending in the vertical direction. A plurality of suction holes h are formed on the upper surface 11u of the suction holding portion 11 (FIG. 2). The rotation drive unit 13 rotates the rotation shaft 12 around its axis.

如圖1中較粗之虛線所示，於吸附保持部11及旋轉軸12之內部，形成有吸氣路徑vp。吸氣路徑vp連接於吸引裝置14。吸引裝置14包含例如吸氣器等吸引機構，通過吸氣路徑vp及多個吸引孔h吸引吸附保持部11之上表面11u上之空間之環境氣體，並將其排出至塗佈處理裝置1之外部。As shown by the thick dotted line in FIG. 1 , a suction path vp is formed inside the adsorption holding portion 11 and the rotating shaft 12 . The suction path vp is connected to the suction device 14 . The suction device 14 includes a suction mechanism such as an aspirator, and sucks the ambient gas in the space above the upper surface 11u of the adsorption holding part 11 through the suction path vp and a plurality of suction holes h, and discharges it to the coating processing device 1. external.

如圖2所示，杯15以俯視下包圍吸附保持部11之周圍之方式設置，且構成為可藉由無圖示之升降機構移動至上下方向之複數個位置。如圖1所示，杯15包含底部15x及外周壁部15y。底部15x具有大致圓環形狀。底部15x之內周端部向上方彎曲特定高度。外周壁部15y以自底部15x之外周端部向上方延伸、彎曲特定高度，進一步向吸附保持部11傾斜上方延伸之方式形成。As shown in FIG. 2 , the cup 15 is arranged so as to surround the suction holding portion 11 in a plan view, and is configured to be movable to a plurality of positions in the vertical direction by an unshown lifting mechanism. As shown in FIG. 1 , the cup 15 includes a bottom portion 15x and an outer peripheral wall portion 15y. The bottom 15x has a generally circular ring shape. The inner peripheral end of the bottom 15x is bent upward by a certain height. The outer peripheral wall portion 15y is formed to extend upward from the outer peripheral end portion of the bottom portion 15x, bend at a predetermined height, and further extend obliquely upward toward the suction holding portion 11 .

於杯15之底部15x，形成有排出口15d。於底部15x之排出口15d之形成部分，安裝有排液導管16。排液導管16之下端部連接於無圖示之排液系統。At the bottom 15x of the cup 15, a discharge port 15d is formed. A drain conduit 16 is installed at the portion where the discharge port 15d of the bottom portion 15x is formed. The lower end of the drain conduit 16 is connected to a drain system not shown in the figure.

如圖2所示，俯視下於杯15之外周壁部15y之內周端部與吸附保持部11之外周端部之間，設置有複數個(於本例中為4個)下表面噴嘴17。複數個下表面噴嘴17以俯視下包圍吸附保持部11之方式將吸附保持部11之中心設為基準以等角度間隔配置。於各下表面噴嘴17之上端部，設置有朝向上方之液體噴出口17b。As shown in FIG. 2 , between the inner peripheral end of the outer peripheral wall portion 15y of the cup 15 and the outer peripheral end of the adsorption holding portion 11 in plan view, a plurality of (four in this example) lower surface nozzles 17 are provided. . The plurality of lower surface nozzles 17 are arranged at equal angular intervals with the center of the suction holding portion 11 as a reference so as to surround the suction holding portion 11 in plan view. At the upper end of each lower surface nozzle 17, a liquid ejection port 17b facing upward is provided.

如圖1所示，各下表面噴嘴17之液體噴出口17b於吸附保持部11之外周端部附近之位置，與由吸附保持部11吸附保持之基板W之下表面對向。另，塗佈處理裝置1具有於無圖示之框體內收納旋轉保持裝置10及液體供給裝置20之構成。下表面噴嘴17固定於例如塗佈處理裝置1之框體。下表面噴嘴17將自清洗液供給系統18供給之清洗液自液體噴出口17b噴出至基板W之下表面。As shown in FIG. 1 , the liquid ejection ports 17b of the lower surface nozzles 17 are located near the outer peripheral end of the adsorption holding portion 11 and face the lower surface of the substrate W adsorbed and held by the adsorption holding portion 11 . Moreover, the coating processing apparatus 1 has the structure which accommodates the rotation holding|maintenance apparatus 10 and the liquid supply apparatus 20 in the housing|casing which is not shown in figure. The lower surface nozzle 17 is fixed to the housing of the coating processing apparatus 1, for example. The lower surface nozzle 17 ejects the cleaning liquid supplied from the cleaning liquid supply system 18 to the lower surface of the substrate W from the liquid ejection port 17 b.

針對具有上述構成之塗佈處理裝置1，說明塗佈處理時之動作之概要。於開始基板W之塗佈處理時，首先由吸附保持部11以水平姿勢保持基板W。又，以水平方向上外周壁部15y之內周面與基板W之外周端部對向之方式，將杯15定位於上下方向。於該狀態下，溶劑噴嘴23藉由無圖示之噴嘴移動裝置移動至基板W之上方。自溶劑噴嘴23對基板W之上表面噴出特定量之溶劑。之後，溶劑噴嘴23自基板W之上方之位置移動至基板W之側方之位置。又，基板W藉由旋轉驅動部13進行動作而旋轉。藉此，基板W之上表面由溶劑潤濕。With respect to the coating processing apparatus 1 having the above-mentioned configuration, the outline of the operation during coating processing will be described. When the coating process of the substrate W is started, the substrate W is first held in a horizontal posture by the suction holding unit 11 . Moreover, the cup 15 is positioned in the vertical direction so that the inner peripheral surface of the outer peripheral wall portion 15y faces the outer peripheral end portion of the substrate W in the horizontal direction. In this state, the solvent nozzle 23 is moved above the substrate W by a nozzle moving device (not shown). A predetermined amount of solvent is sprayed from the solvent nozzle 23 onto the upper surface of the substrate W. Afterwards, the solvent nozzle 23 moves from a position above the substrate W to a position beside the substrate W. In addition, the substrate W is rotated by the operation of the rotation drive unit 13 . Thereby, the upper surface of the substrate W is wetted by the solvent.

接著，抗蝕劑噴嘴21藉由無圖示之噴嘴移動裝置移動至基板W之上方。於該狀態下，自抗蝕劑噴嘴21對基板W之上表面噴出特定量之抗蝕劑液。藉此，對旋轉之基板W之上表面塗佈抗蝕劑液。自旋轉之基板W向外側飛散之抗蝕劑液被杯15之外周壁部15y之內周面接住。將接住之抗蝕劑液收集於杯15之底部15x，自排出口15d通過排液導管16導向無圖示之排液系統。如上所述，將基板W之塗佈處理中對基板W之上表面整體塗佈抗蝕劑液之步驟，即於基板W之上表面整體形成抗蝕劑液之液膜之步驟稱為液膜形成步驟。Next, the resist nozzle 21 is moved above the substrate W by a nozzle moving device (not shown). In this state, a predetermined amount of resist liquid is ejected from the resist nozzle 21 toward the upper surface of the substrate W. As shown in FIG. In this way, the resist liquid is applied to the upper surface of the rotating substrate W. The resist solution scattered outward from the rotating substrate W is caught by the inner peripheral surface of the outer peripheral wall portion 15y of the cup 15 . The received resist solution is collected at the bottom 15x of the cup 15, and is directed from the discharge port 15d through the drain conduit 16 to a drain system not shown in the figure. As mentioned above, the step of coating the resist liquid on the entire upper surface of the substrate W in the coating process of the substrate W, that is, the step of forming a liquid film of the resist liquid on the entire upper surface of the substrate W is called a liquid film. forming steps.

接著，於停止自抗蝕劑噴嘴21向基板W噴出抗蝕劑液之狀態下，藉由繼續基板W之旋轉，甩開塗佈於基板W之上表面之抗蝕劑液中多餘之抗蝕劑液。又，殘留於基板W上之抗蝕劑液之液膜乾燥。藉此，於基板W之上表面形成抗蝕劑膜。如上所述，將基板W之塗佈處理中使塗佈於基板W之上表面之抗蝕劑液之液膜乾燥之步驟稱為液膜乾燥步驟。Then, by continuing to rotate the substrate W while stopping the spraying of the resist solution from the resist nozzle 21 to the substrate W, the excess resist in the resist solution coated on the upper surface of the substrate W is shaken off. solution. Also, the liquid film of the resist liquid remaining on the substrate W is dried. Thereby, a resist film is formed on the upper surface of the substrate W. As shown in FIG. As described above, the step of drying the liquid film of the resist solution applied on the upper surface of the substrate W in the coating process of the substrate W is called a liquid film drying step.

於基板W之上表面形成抗蝕劑膜之後，為去除附著於基板W之下表面之抗蝕劑液或抗蝕劑膜，而自下表面噴嘴17向基板W之下表面噴出清洗液。作為清洗液，與自上述溶劑噴嘴23供給至基板W之上表面之溶劑同樣，使用可溶解抗蝕劑膜之溶劑。After the resist film is formed on the upper surface of the substrate W, cleaning solution is sprayed from the lower surface nozzle 17 to the lower surface of the substrate W in order to remove the resist liquid or the resist film adhering to the lower surface of the substrate W. As the cleaning liquid, a solvent capable of dissolving the resist film is used in the same manner as the solvent supplied to the upper surface of the substrate W from the above-mentioned solvent nozzle 23 .

之後，停止自下表面噴嘴17向基板W噴出清洗液。於該狀態下，藉由繼續基板W之旋轉，塗佈於基板W之下表面之清洗液乾燥。藉此，去除附著於基板W之下表面之抗蝕劑液或抗蝕劑之固態物質。藉由塗佈處理裝置1之上述一系列動作形成抗蝕劑膜之基板W自塗佈處理裝置1搬出，且由無圖示之曝光裝置實施曝光處理。Thereafter, spraying of the cleaning liquid from the lower surface nozzle 17 to the substrate W is stopped. In this state, by continuing the rotation of the substrate W, the cleaning solution applied to the lower surface of the substrate W is dried. Thereby, the resist liquid or the solid substance of the resist adhering to the lower surface of the substrate W is removed. The substrate W on which a resist film has been formed by the above-described series of operations of the coating processing apparatus 1 is carried out from the coating processing apparatus 1, and is subjected to exposure processing by an exposure apparatus (not shown).

[2]液膜乾燥步驟中殘留於基板W之抗蝕劑液 圖3係成為圖1之塗佈處理裝置1之處理對象之基板W之俯視圖。圖4係圖3之基板W之A-A線剖視圖。本實施形態之基板W係具有約300 mm之直徑之圓形基板，如圖3及圖4所示，具有上表面S1及下表面S2。於該基板W之外周端部，形成有缺口N(圖3)。 [2] Resist solution remaining on the substrate W during the liquid film drying step FIG. 3 is a plan view of a substrate W to be processed by the coating processing apparatus 1 of FIG. 1 . FIG. 4 is a cross-sectional view along line A-A of the substrate W in FIG. 3 . The substrate W of this embodiment is a circular substrate with a diameter of about 300 mm, as shown in FIG. 3 and FIG. 4 , and has an upper surface S1 and a lower surface S2. A notch N is formed on the outer peripheral end of the substrate W ( FIG. 3 ).

基板W之上表面S1中，於距基板W之外周端部一定寬度之部分，形成有向上方突出且沿該基板W之外周端部延伸之圓環狀之凸部。將基板W之凸部之形成部分稱為邊緣部(Outer support ring：外支撐環)SR。於該基板W中，位於邊緣部SR之內側之部分之厚度(基板之厚度)為100 μm以下，小於邊緣部SR之厚度。另，邊緣部SR之厚度大於100 μm且為775 μm以下，接近例如0.8 mm。On the upper surface S1 of the substrate W, an annular protrusion protruding upward and extending along the outer peripheral end of the substrate W is formed at a portion having a certain width from the outer peripheral end of the substrate W. The forming part of the convex part of the board|substrate W is called edge part (outer support ring: Outer support ring) SR. In this substrate W, the thickness (thickness of the substrate) of the portion located inside the edge portion SR is 100 μm or less, which is smaller than the thickness of the edge portion SR. In addition, the thickness of the edge portion SR is greater than 100 μm and less than or equal to 775 μm, which is close to, for example, 0.8 mm.

於以下之說明中，將基板W之上表面S1中邊緣部RP之內側之區域稱為內側區域IA。圖4中，將基板W整體之剖視圖中邊緣部SR及其周邊部之放大剖視圖顯示於對白框內。In the following description, the area inside the edge portion RP in the upper surface S1 of the substrate W is referred to as an inner area IA. In FIG. 4 , an enlarged cross-sectional view of the edge portion SR and its peripheral portion in the cross-sectional view of the entire substrate W is shown in a balloon.

如圖4之對白框內所示，本實施形態之基板W中，於邊緣部SR與內側區域IA之邊界形成有落差ST。如此，於位於邊緣部SR之內周端部之落差ST，容易於基板W之塗佈處理中之液膜乾燥步驟中滯留抗蝕劑液。若滯留之抗蝕劑液乾燥，則存在於上述落差ST及其附近之抗蝕劑膜之厚度局部變大。此種抗蝕劑膜之厚度之不均一成為曝光不良及產生粒子之主要原因。As shown in the white frame in FIG. 4 , in the substrate W of the present embodiment, a step ST is formed at the boundary between the edge portion SR and the inner region IA. In this way, the resist liquid tends to stagnate in the step of drying the liquid film in the coating process of the substrate W at the step ST located at the inner peripheral end of the edge portion SR. When the remaining resist solution dries, the thickness of the resist film present at the above-mentioned step ST and its vicinity increases locally. The non-uniformity of the thickness of the resist film becomes the main cause of exposure failure and generation of particles.

圖5係顯示液膜乾燥步驟中於基板W之邊緣部SR與內側區域IA之邊界之落差ST滯留抗蝕劑液之例之圖。於圖5中，上段、中段及下段按時間序列依序由放大剖視圖顯示液膜乾燥步驟中存在於基板W之邊緣部SR及其周邊部之抗蝕劑液R1或抗蝕劑膜R2之狀態。FIG. 5 is a diagram showing an example of a resist liquid stagnating in a step ST between the edge portion SR of the substrate W and the inner area IA in the liquid film drying step. In FIG. 5 , the upper section, middle section and lower section show the state of the resist liquid R1 or the resist film R2 present on the edge SR and its peripheral part of the substrate W in the liquid film drying step from the enlarged cross-sectional view sequentially in time series. .

如圖5之上段之剖視圖所示，於液膜乾燥步驟之開始時點，於基板W之上表面S1形成有具有流動性之抗蝕劑液R1之液膜。藉由基板W旋轉，而對抗蝕劑液R1作用自基板W之中心向外周端部之離心力。又，於包圍基板W之空間內產生氣流。藉此，如圖5之中段之剖視圖中較粗之實線箭頭所示，於液膜之上層部分流動之抗蝕劑液R1之一部分被甩開至基板W之外側。As shown in the upper cross-sectional view of FIG. 5 , at the beginning of the liquid film drying step, a liquid film of the fluid resist liquid R1 is formed on the upper surface S1 of the substrate W. As the substrate W rotates, a centrifugal force acts on the resist liquid R1 from the center of the substrate W toward the outer peripheral end. In addition, an airflow is generated in the space surrounding the substrate W. As shown in FIG. As a result, a part of the resist liquid R1 flowing on the upper part of the liquid film is thrown away to the outside of the substrate W as shown by the thicker solid line arrow in the cross-sectional view in the middle section of FIG. 5 .

藉由甩開流動之多餘之抗蝕劑液R1，而於基板W之上表面S1中，抗蝕劑液R1之液膜自基板W之中心向外周端部薄膜化且連續乾燥。此時，如圖5之中段之剖視圖中空白箭頭所示，若滯留於落差ST之抗蝕劑液R1乾燥，則如圖5之下段之剖視圖所示，形成於落差ST及其周邊部之抗蝕劑膜R2之厚度與其他部分相比變厚。By throwing away excess resist liquid R1 flowing, on the upper surface S1 of the substrate W, the liquid film of the resist liquid R1 is thinned from the center of the substrate W to the outer peripheral end and dried continuously. At this time, as shown by the blank arrow in the cross-sectional view of the middle section of Figure 5, if the resist solution R1 remaining in the step ST dries, as shown in the cross-sectional view of the lower section of Figure 5, the resist formed on the step ST and its surrounding parts will be formed. The thickness of the etchant film R2 is thicker than other parts.

如上所述，為防止抗蝕劑液滯留於落差ST，而考慮於液膜乾燥步驟之期間中明顯提高基板W之轉速之方法。於該情形時，液膜乾燥步驟中對流通於液膜之上層部分之抗蝕劑液R1作用更大之離心力。又，於包圍基板W之空間內產生更強之氣流。然而，若於液膜乾燥步驟之初始階段明顯提高基板W之轉速，則橫跨形成於基板W上之抗蝕劑膜R2整體產生斑點。As described above, in order to prevent the resist liquid from stagnating in the step ST, a method of significantly increasing the rotation speed of the substrate W during the liquid film drying step is considered. In this case, a larger centrifugal force acts on the resist liquid R1 flowing in the upper part of the liquid film in the liquid film drying step. Also, stronger airflow is generated in the space surrounding the substrate W. However, if the rotation speed of the substrate W is significantly increased at the initial stage of the liquid film drying step, spots are generated across the entirety of the resist film R2 formed on the substrate W.

因此，於本實施形態中，液膜乾燥步驟之基板W之轉速隨著時間之經過變更為2階段。具體而言，於液膜乾燥步驟之開始時點至液膜乾燥步驟之結束時點之前之中間時點之間，基板W之轉速被調整為第1轉速。之後，於中間時點至結束時點之間，基板W之轉速被調整為高於第1轉速之第2轉速。Therefore, in the present embodiment, the rotation speed of the substrate W in the liquid film drying step is changed in two steps over time. Specifically, the rotation speed of the substrate W is adjusted to the first rotation speed between the start time point of the liquid film drying step and the middle time point before the end time point of the liquid film drying step. Afterwards, between the middle time point and the end time point, the rotation speed of the substrate W is adjusted to a second rotation speed higher than the first rotation speed.

此處，將基板W之內側區域IA中包含基板W之中心且相對於基板W之中心成為同心之圓形之區域稱為中央區域。又，將基板W之內側區域IA中包圍中央區域且包含基板W之外周端部之區域稱為圓環區域。另，中央區域之直徑為例如基板W之直徑之一半左右。Here, in the inner area IA of the substrate W, a circular area that includes the center of the substrate W and is concentric with the center of the substrate W is referred to as a central area. Also, a region surrounding the central region and including the outer peripheral end of the substrate W in the inner region IA of the substrate W is referred to as an annular region. In addition, the diameter of the central region is about half of the diameter of the substrate W, for example.

於該情形時，藉由例如模擬或實驗等，將第1轉速規定為於形成於中央區域之抗蝕劑膜R2不產生斑點之程度之速度。另一方面，藉由例如模擬或實驗等，將第2轉速規定為具有流動性之抗蝕劑液R1不滯留於落差ST之程度之速度。再者，將中間時點規定為開始液膜乾燥步驟之後，基板W之中央區域上之抗蝕劑液R1乾燥且存在於圓環區域上之抗蝕劑液R1流動之狀態之期間內。In this case, for example, by simulation or experiment, the first rotational speed is set to a speed at which spots are not generated in the resist film R2 formed in the central region. On the other hand, by, for example, simulation or experiment, the second rotational speed is defined as a speed at which the fluid resist liquid R1 does not stagnate on the level difference ST. Furthermore, the intermediate time point is defined as a period during which the resist liquid R1 on the central region of the substrate W is dry and the resist liquid R1 on the circular ring region is flowing after the liquid film drying step is started.

藉由如上所述調整基板W之轉速，而於液膜乾燥步驟之開始時點至中間時點內，可不產生斑點地使中央區域上之抗蝕劑液R1乾燥。另一方面，於液膜乾燥步驟之中間時點至結束時點內，對流通於圓環區域上之抗蝕劑液R1作用更大之離心力。又，於包圍基板W之空間內產生更強之氣流。藉此，防止抗蝕劑液R1滯留於落差ST。因此，防止落差ST及其周邊部之抗蝕劑膜R2之厚度局部變大。By adjusting the rotation speed of the substrate W as described above, the resist liquid R1 on the central region can be dried without unevenness from the start time to the middle time of the liquid film drying step. On the other hand, from the middle time point to the end time point of the liquid film drying step, a larger centrifugal force acts on the resist liquid R1 convected on the ring area. Also, stronger airflow is generated in the space surrounding the substrate W. This prevents the resist liquid R1 from stagnating at the level ST. Therefore, the thickness of the resist film R2 in the step ST and its peripheral portion is prevented from locally increasing.

[3]塗佈處理中之基板W之轉速之控制例 圖6係顯示本發明之一實施形態之塗佈處理中之基板W之轉速之控制例之圖。於圖6之上段，由圖表顯示圖1之塗佈處理裝置1之塗佈處理中之基板W之轉速之變化。於圖6之上段之圖表中，縱軸顯示基板W之轉速，橫軸顯示時間。於圖6之下段之複數個對白框，由俯視圖及縱剖視圖顯示於塗佈處理中之複數個時點存在於基板W上之抗蝕劑液R1或抗蝕劑膜R2之狀態。 [3] Example of controlling the rotation speed of the substrate W during the coating process FIG. 6 is a diagram showing an example of control of the rotational speed of the substrate W in the coating process according to one embodiment of the present invention. In the upper part of FIG. 6 , changes in the rotational speed of the substrate W during coating processing by the coating processing apparatus 1 of FIG. 1 are shown in graphs. In the graph in the upper part of FIG. 6 , the vertical axis shows the rotational speed of the substrate W, and the horizontal axis shows time. The multiple balloons in the lower part of FIG. 6 show the states of the resist liquid R1 or the resist film R2 on the substrate W at multiple points in the coating process from the top view and the vertical cross-sectional view.

圖7係顯示圖6之液膜乾燥步驟中存在於基板W之邊緣部SR及其周邊部之抗蝕劑液R1或抗蝕劑膜R2之狀態之變化之圖。於圖7中，自上至下按4個階段之時間序列依序由放大剖視圖顯示液膜乾燥步驟中存在於基板W之邊緣部SR及其周邊部之抗蝕劑液R1或抗蝕劑膜R2之狀態。FIG. 7 is a diagram showing changes in the state of the resist liquid R1 or the resist film R2 present at the edge portion SR and its peripheral portion of the substrate W in the liquid film drying step of FIG. 6 . In FIG. 7 , the resist solution R1 or the resist film existing on the edge SR and its peripheral part of the substrate W during the liquid film drying step is shown from top to bottom in a time series of four stages from an enlarged cross-sectional view. The state of R2.

另，基板W之轉速藉由控制部30控制圖1之旋轉驅動部13進行調整。又，控制部30控制圖1之溶劑供給系統24，藉此進行對基板W之上表面S1之溶劑之供給及停止。又，控制部30控制圖1之塗佈液供給系統22，藉此進行對基板W之上表面S1之抗蝕劑液R1之供給及停止。再者，控制部30控制圖1之清洗液供給系統18，藉此進行對基板W之下表面S2之清洗液之供給及停止。In addition, the rotation speed of the substrate W is adjusted by controlling the rotation drive unit 13 of FIG. 1 by the control unit 30 . In addition, the control unit 30 controls the solvent supply system 24 in FIG. 1 so as to supply and stop the solvent to the upper surface S1 of the substrate W. In addition, the control unit 30 controls the coating liquid supply system 22 in FIG. 1 so as to supply and stop the resist liquid R1 to the upper surface S1 of the substrate W. Furthermore, the control unit 30 controls the cleaning liquid supply system 18 in FIG. 1 so as to supply and stop the cleaning liquid to the lower surface S2 of the substrate W.

於塗佈處理裝置1之塗佈處理之初始狀態下，具有圖3及圖4之構成之未處理之基板W由圖1之吸附保持部11以水平姿勢吸附保持。此時，將基板W之轉速維持為0。再者，以杯15之外周壁部15y之內周面與基板W之外周端部對向之方式，將杯15定位於上下方向。In the initial state of coating processing by the coating processing apparatus 1 , the unprocessed substrate W having the configuration shown in FIGS. 3 and 4 is sucked and held in a horizontal posture by the suction holding unit 11 of FIG. 1 . At this time, the rotation speed of the substrate W is maintained at zero. Furthermore, the cup 15 is positioned in the up-down direction so that the inner peripheral surface of the outer peripheral wall portion 15y of the cup 15 faces the outer peripheral end portion of the substrate W. As shown in FIG.

如圖6所示，首先開始液膜形成步驟。於時點t1至時點t2之期間p1內，自圖1之溶劑噴嘴23對基板W之上表面S1供給特定量之溶劑。藉此，如與時點t2對應之對白框內所示，於基板W之上表面S1上保持特定量之溶劑。As shown in Fig. 6, first, the liquid film forming step is started. During the period p1 from the time point t1 to the time point t2, a specific amount of solvent is supplied to the upper surface S1 of the substrate W from the solvent nozzle 23 in FIG. 1 . Thereby, a specific amount of solvent remains on the upper surface S1 of the substrate W, as shown in the white box corresponding to the time point t2.

接著，自時點t3至時點t4，基板W之轉速自0上升至s1，基板W之上表面S1所保持之溶劑自基板W之中心向基板W之外周端部擴展。將轉速s1設定於例如500 rpm以上且1500 rpm以下之範圍內。Then, from time point t3 to time point t4, the rotation speed of the substrate W increases from 0 to s1, and the solvent held on the upper surface S1 of the substrate W spreads from the center of the substrate W to the outer peripheral end of the substrate W. The rotational speed s1 is set, for example, within a range of not less than 500 rpm and not more than 1500 rpm.

如上所述，藉由對未處理之基板W之上表面S1供給溶劑，而將基板W之上表面S1改性，抗蝕劑液R1容易於基板W之上表面S1擴展。如此，將於塗佈抗蝕劑液R1之前使基板W之上表面S1改性之處理稱為預潤濕。另，於預潤濕中，基板W亦可旋轉。於該情形時，將基板W之轉速設定於例如大於0 rpm且1000 rpm以下之範圍內。As described above, the upper surface S1 of the substrate W is modified by supplying a solvent to the upper surface S1 of the untreated substrate W, and the resist liquid R1 spreads easily on the upper surface S1 of the substrate W. Thus, the process of modifying the upper surface S1 of the substrate W before applying the resist solution R1 is called prewetting. In addition, during the pre-wetting, the substrate W may also be rotated. In this case, the rotation speed of the substrate W is set within a range of, for example, more than 0 rpm and not more than 1000 rpm.

接著，時點t4至時點t6之期間p2內，自圖1之抗蝕劑噴嘴21對基板W之上表面S1供給特定量之抗蝕劑液R1。此時，自時點t4至時點t6之前之時點t5，基板W之轉速上升至高於s1之s2。又，自時點t5起一定期間內基板W之轉速維持於s2。將轉速s2設定於例如1000 rpm以上且3000 rpm以下之範圍內。藉此，如與時點t5對應之對白框內所示，於基板W之上表面S1之中央部形成抗蝕劑液R1之塊(核)。又，自時點t5至時點t6，抗蝕劑液R1之核被整形。Next, during the period p2 from the time point t4 to the time point t6, a predetermined amount of resist liquid R1 is supplied to the upper surface S1 of the substrate W from the resist nozzle 21 in FIG. 1 . At this time, from the time point t4 to the time point t5 before the time point t6, the rotation speed of the substrate W increases to s2 which is higher than s1. Also, the rotation speed of the substrate W is maintained at s2 for a certain period of time from time t5. The rotational speed s2 is set, for example, within a range of not less than 1000 rpm and not more than 3000 rpm. Thereby, as shown in the balloon corresponding to the time point t5, a mass (nucleus) of the resist liquid R1 is formed on the central portion of the upper surface S1 of the substrate W. Also, from the time point t5 to the time point t6, the core of the resist liquid R1 is shaped.

自時點t5起一定期間內基板W之轉速維持於s2之後，至時點t6基板W之轉速下降至低於s1及s2之s3。自時點t6起一定期間內基板W之轉速維持於s3。將轉速s3設定於例如0 rpm以上且500 rpm以下之範圍內。After the rotation speed of the substrate W is maintained at s2 for a certain period from time t5, the rotation speed of the substrate W drops to s3 which is lower than s1 and s2 at time t6. The rotation speed of the substrate W is maintained at s3 for a certain period of time from time t6. The rotational speed s3 is set, for example, within a range of not less than 0 rpm and not more than 500 rpm.

於自時點t6經過一定期間後，至時點t7基板W之轉速上升至高於s2之s4，一定期間內基板W之轉速維持於s4。將轉速s4設定於例如0 rpm以上且3000 rpm以下之範圍內。又，於自時點t7經過一定期間後，至時點t8，基板W之轉速下降至低於s4之s5。將轉速s5設定於例如500 rpm以上且1500 rpm以下之範圍內。自上述時點t6至時點t8，抗蝕劑液R1自基板W之中心向外周端部擴展。藉此，如與時點t8對應之對白框內所示，於基板W之上表面S1整體形成抗蝕劑液R1之液膜，液膜形成步驟結束。After a certain period of time has elapsed from the time point t6, the rotation speed of the substrate W rises to s4 which is higher than s2 at the time point t7, and the rotation speed of the substrate W is maintained at s4 for a certain period of time. The rotational speed s4 is set, for example, within a range of not less than 0 rpm and not more than 3000 rpm. Also, after a certain period of time has elapsed from the time point t7 to the time point t8, the rotation speed of the substrate W drops to s5 which is lower than s4. The rotational speed s5 is set, for example, within a range of not less than 500 rpm and not more than 1500 rpm. From the above time point t6 to time point t8, the resist liquid R1 spreads from the center of the substrate W to the outer peripheral end. As a result, as shown in the white box corresponding to the time point t8, a liquid film of the resist liquid R1 is formed on the entire upper surface S1 of the substrate W, and the liquid film forming step is completed.

接著，開始液膜乾燥步驟。於液膜乾燥步驟中，自時點t8至時點t9，基板W之轉速維持於s5。時點t8相當於上述液膜乾燥步驟之開始時點。轉速s5相當於上述第1轉速。Next, the liquid film drying step starts. In the liquid film drying step, from the time point t8 to the time point t9, the rotation speed of the substrate W is maintained at s5. Time point t8 corresponds to the start time point of the above-mentioned liquid film drying step. The rotational speed s5 corresponds to the first rotational speed described above.

於時點t8，如自圖7上數起第1段剖視圖所示，於基板W之上表面S1形成有具有流動性之抗蝕劑液R1之液膜。於時點t8至時點t9之間，藉由基板W之轉速維持於s5(第1轉速)，而如圖7上數起第2段剖視圖中較粗之實線箭頭所示，於液膜之上層部分流動之抗蝕劑液R1之一部分甩開至基板W之外側。此時，於基板W之中央區域，抗蝕劑液R1自基板W之中心向外周端部依序乾燥。At time t8, as shown in the first sectional view from FIG. 7 , a liquid film of fluid resist liquid R1 is formed on the upper surface S1 of the substrate W. Between the time point t8 and the time point t9, the rotation speed of the substrate W is maintained at s5 (the first rotation speed), and as shown by the thicker solid arrow in the second sectional view from the top of Fig. 7, the upper layer of the liquid film Part of the partially flowing resist solution R1 is thrown off to the outside of the substrate W. At this time, in the central region of the substrate W, the resist liquid R1 is dried sequentially from the center of the substrate W to the outer peripheral end.

時點t9相當於上述之液膜乾燥步驟之中間時點。於時點t9，如與圖6之時點t9對應之對白框內所示，於基板W之上表面S1之中央區域形成有抗蝕劑膜R2。另一方面，於基板W之上表面S1之圓環區域，具有流動性之抗蝕劑液R1自基板W之中央向基板W之外周端部流通。Time point t9 corresponds to the middle time point of the above-mentioned liquid film drying step. At the time point t9, as shown in the white box corresponding to the time point t9 in FIG. 6 , a resist film R2 is formed on the central region of the upper surface S1 of the substrate W. On the other hand, in the circular area of the upper surface S1 of the substrate W, the liquid resist R1 flows from the center of the substrate W to the outer peripheral end of the substrate W.

之後，於時點t9基板W之轉速上升至高於s5之s6。將轉速s6設定於例如1500 rpm以上且3500 rpm以下之範圍內。自時點t9至時點t10，基板W之轉速維持於s6。轉速s6相當於上述第2轉速。於時點t10液膜乾燥步驟結束。藉此，於時點t10，如與圖6之時點t10對應之對白框內所示，於基板W之上表面S1整體形成抗蝕劑膜R2。時點t10相當於上述之液膜乾燥步驟之結束時點。Thereafter, at time t9, the rotation speed of the substrate W is increased to s6 which is higher than s5. The rotational speed s6 is set, for example, in the range of not less than 1500 rpm and not more than 3500 rpm. From the time point t9 to the time point t10, the rotation speed of the substrate W is maintained at s6. The rotational speed s6 corresponds to the second rotational speed described above. At time point t10, the liquid film drying step ends. Thereby, at the time point t10 , as shown in the white box corresponding to the time point t10 in FIG. 6 , the resist film R2 is formed on the entire upper surface S1 of the substrate W. Time point t10 corresponds to the end time point of the above-mentioned liquid film drying step.

於時點t9至時點t10之間，藉由基板W之轉速維持於s6(第2轉速)，而如自圖7上數起第3段剖視圖中較粗之實線箭頭所示，於液膜之上層部分流動之抗蝕劑液R1被更強地甩開至基板W之外側。藉此，防止於落差ST及其周邊部滯留抗蝕劑液R1，且存在於基板W之圓環區域之抗蝕劑液R1乾燥。因此，於時點t10，如自圖7上數起第4段剖視圖所示，形成於落差ST及其周邊部之抗蝕劑膜R2之厚度與其他部分大致相等。根據該等結果，於液膜乾燥步驟結束時，於包含落差ST之基板W之上表面S1整體，以均一之厚度形成抗蝕劑膜R2。Between the time point t9 and the time point t10, the rotation speed of the substrate W is maintained at s6 (the second rotation speed), and as shown by the thicker solid arrow in the third section from the top of FIG. The resist liquid R1 flowing in the upper part is thrown away to the outside of the substrate W more strongly. Thereby, stagnation of the resist liquid R1 on the step ST and its peripheral portion is prevented, and the resist liquid R1 existing in the annular region of the substrate W is dried. Therefore, at time t10, as shown in the fourth sectional view from the top of FIG. 7 , the thickness of the resist film R2 formed on the step ST and its peripheral portion is substantially equal to that of other portions. From these results, the resist film R2 was formed with a uniform thickness on the entire upper surface S1 of the substrate W including the step ST at the end of the liquid film drying step.

於經過時點t10之後，一定期間內基板W之轉速維持於s5。之後，於時點t11轉速下降至低於s5及s6之s8。於該狀態下，一定期間內自圖1之複數個下表面噴嘴17對基板W之下表面S2供給清洗液。藉此，由清洗液去除附著於基板W之下表面S2之抗蝕劑液R1或抗蝕劑之固態物質。After time t10 passes, the rotation speed of the substrate W is maintained at s5 for a certain period of time. Afterwards, at time point t11, the rotational speed drops to s8 which is lower than s5 and s6. In this state, cleaning liquid is supplied to the lower surface S2 of the substrate W from the plurality of lower surface nozzles 17 in FIG. 1 for a certain period of time. Thereby, the resist liquid R1 or the solid substance of the resist adhering to the lower surface S2 of the substrate W is removed by the cleaning liquid.

如此，於洗淨基板W之下表面之步驟(所謂背面清洗步驟)中，將基板W之轉速設定為低於由液膜乾燥步驟設定之轉速。因此，於背面清洗步驟中，與使基板W以液膜乾燥步驟中之轉速旋轉之情形相比，可減少自基板W飛散之清洗液之量。藉此，防止自基板W之下表面S2飛散之清洗液附著於基板W之上表面S1上所形成之抗蝕劑膜R2上。其結果，可防止產生基板W之處理不良。藉由上述背面清洗步驟結束，而結束基板W之塗佈處理。Thus, in the step of cleaning the lower surface of the substrate W (so-called backside cleaning step), the rotation speed of the substrate W is set lower than that set in the liquid film drying step. Therefore, in the backside cleaning step, the amount of cleaning liquid scattered from the substrate W can be reduced compared to the case where the substrate W is rotated at the rotation speed in the liquid film drying step. Thereby, the cleaning liquid scattered from the lower surface S2 of the substrate W is prevented from adhering to the resist film R2 formed on the upper surface S1 of the substrate W. As a result, it is possible to prevent the processing failure of the substrate W from occurring. When the above-mentioned backside cleaning step is completed, the coating process of the substrate W is completed.

於上述圖6之例中，時點t8至時點t10之時間之長度(液膜乾燥步驟之開始至結束之時間)為例如15秒以上且30秒以下。又，時點t8至時點t9之時間之長度為例如10秒以上且20秒以下。In the above-mentioned example of FIG. 6 , the length of time from the time point t8 to the time point t10 (the time from the start to the end of the liquid film drying step) is, for example, 15 seconds or more and 30 seconds or less. Moreover, the length of time from the time point t8 to the time point t9 is, for example, not less than 10 seconds and not more than 20 seconds.

[4]液膜乾燥步驟之中間時點 如上所述，液膜乾燥步驟之中間時點規定為於開始液膜乾燥步驟之後，基板W之中央區域上之抗蝕劑液R1乾燥且存在於圓環區域上之抗蝕劑液R1流動之狀態之期間內。 [4] The middle time point of the liquid film drying step As described above, the intermediate time point of the liquid film drying step is defined as a state where the resist liquid R1 on the central area of the substrate W is dried and the resist liquid R1 existing on the circular ring area flows after the liquid film drying step is started. during the period.

此處，例如圖6之例中，於液膜乾燥步驟中將基板W之轉速固定維持於s5之情形時，基板W上之抗蝕劑液R1整體乾燥之前，由於流動於液膜之上層部分之抗蝕劑液R1產生干涉條紋。該干涉條紋可根據基板W之轉速及抗蝕劑液R1之種類視認。Here, for example, in the example of FIG. 6 , when the rotation speed of the substrate W is kept fixed at s5 in the liquid film drying step, before the resist liquid R1 on the substrate W is completely dried, due to the flow on the upper part of the liquid film The resist solution R1 produced interference fringes. The interference fringes can be visually recognized according to the rotation speed of the substrate W and the type of the resist liquid R1.

因此，於可確認上述干涉條紋之情形時，較佳為將中間時點規定為開始液膜乾燥步驟之後，供給至基板W之上表面S1之抗蝕劑液R1之表面所產生之干涉條紋消失之前之時點。藉此，藉由於液膜乾燥步驟之中間時點使基板W之轉速上升，而可順滑甩開存在於基板W之外周部及其附近且具有流動性之抗蝕劑液R1。Therefore, when the above-mentioned interference fringes can be confirmed, it is preferable to define the intermediate time point as before the interference fringes generated on the surface of the resist liquid R1 supplied to the upper surface S1 of the substrate W disappear after the liquid film drying step is started. point in time. Thereby, by increasing the rotation speed of the substrate W in the middle of the liquid film drying step, the fluid resist liquid R1 existing on the periphery of the substrate W and its vicinity can be smoothly thrown off.

[5]效果 (1)於上述塗佈處理裝置1中，對具有邊緣部SR之基板W實施塗佈處理。該塗佈處理包含液膜形成步驟及液膜乾燥步驟。首先，於液膜形成步驟中，預潤濕後對旋轉之基板W之上表面S1供給抗蝕劑液R1。藉此，使抗蝕劑液擴展至基板W之上表面S1整體，結束液膜形成步驟。 [5] Effect (1) In the coating processing apparatus 1 described above, coating processing is performed on the substrate W having the edge portion SR. This coating process includes a liquid film forming step and a liquid film drying step. First, in the liquid film forming step, the resist liquid R1 is supplied to the upper surface S1 of the rotating substrate W after prewetting. In this way, the resist liquid spreads over the entire upper surface S1 of the substrate W, and the liquid film forming step is completed.

接著，於液膜乾燥步驟中，為使基板W乾燥，而自開始時點至中間時點基板以第1轉速旋轉。藉此，位於基板W之中央區域且具有流動性之抗蝕劑液向基板W之外周部移動。因此，基板W之上表面S1之中央區域乾燥。Next, in the liquid film drying step, in order to dry the substrate W, the substrate is rotated at the first rotational speed from the beginning to the middle. Accordingly, the fluid resist liquid located in the central region of the substrate W moves to the outer periphery of the substrate W. As shown in FIG. Therefore, the central region of the upper surface S1 of the substrate W is dried.

接著，自液膜乾燥步驟之中間時點至結束時點基板W以高於第1轉速之第2轉速旋轉。於該情形時，對於基板W之外周部及其附近流動之抗蝕劑液R1作用更大之離心力。又，於包圍基板W之空間，產生更大之氣流。藉此，於基板W之上表面S1上自基板W之中心向外周部流動之抗蝕劑液R1之大部分自基板W之中央區域超過邊緣部SR飛散至基板W之外側。換言之，於基板W之上表面S1上導向邊緣部SR與內側區域IA之邊界之落差ST之不需要之抗蝕劑液R1被甩開至基板W之外側。Next, the substrate W is rotated at a second rotation speed higher than the first rotation speed from the middle time point to the end time point of the liquid film drying step. In this case, a larger centrifugal force acts on the resist liquid R1 flowing around the outer periphery of the substrate W and its vicinity. Also, in the space surrounding the substrate W, a larger air flow is generated. Thus, most of the resist liquid R1 flowing from the center of the substrate W to the outer periphery on the upper surface S1 of the substrate W is scattered from the central region of the substrate W beyond the edge SR to the outside of the substrate W. In other words, the unnecessary resist liquid R1 guided to the step ST between the edge portion SR and the inner region IA on the upper surface S1 of the substrate W is thrown to the outside of the substrate W.

其結果，可防止起因於塗佈處理時不需要之抗蝕劑液R1殘留於基板W上而產生基板W之處理不良及基板W之污染。As a result, it is possible to prevent poor processing of the substrate W and contamination of the substrate W caused by unnecessary resist liquid R1 remaining on the substrate W during the coating process.

(2)於圖6之例中，第2轉速即s7設定為高於第1轉速即s4之2倍之轉速。於該情形時，對導向位於邊緣部SR之內緣之落差ST之不需要之抗蝕劑液R1作用更大之離心力。又，於包圍基板W之空間產生更大之氣流。藉此，邊緣部SR之內側之不需要之抗蝕劑液R1被更順滑地甩開至基板W之外側。(2) In the example of FIG. 6 , s7 which is the second rotational speed is set to be twice the rotational speed of s4 which is the first rotational speed. In this case, a larger centrifugal force acts on the unnecessary resist liquid R1 guided to the drop ST located at the inner edge of the edge portion SR. Also, a larger air flow is generated in the space surrounding the substrate W. Thereby, the unnecessary resist liquid R1 inside the edge portion SR is thrown off to the outside of the substrate W more smoothly.

[6]確認試驗 本發明者們為確認上述塗佈處理之效果，而進行以下之確認試驗。首先，本發明者們藉由依照圖6之例進行塗佈處理而製作實施例之基板W。於以下之說明中，將該基板W稱為實施例基板W1。又，本發明者們除於液膜乾燥步驟之期間中將基板W之轉速固定維持為第1轉速(s5)之點以外亦依照圖6之例進行塗佈處理，藉此製作比較例之基板W。於以下之說明中，將該基板W稱為比較例基板W2。另，於製作實施例基板W1及比較例基板W2時，形成抗蝕劑膜R2之後，去除存在於包含邊緣部SR之基板周緣部之抗蝕劑膜R2之部分。 [6] Confirmation test The inventors of the present invention conducted the following confirmatory tests in order to confirm the effect of the coating treatment described above. First, the present inventors produced the substrate W of the embodiment by performing coating treatment according to the example shown in FIG. 6 . In the following description, this substrate W is referred to as an example substrate W1. In addition, the present inventors performed the coating process according to the example of FIG. 6 except for maintaining the rotation speed of the substrate W at the first rotation speed (s5) during the liquid film drying step, thereby producing a substrate of a comparative example. W. In the following description, this substrate W is referred to as a comparative example substrate W2. In addition, when the example substrate W1 and the comparative example substrate W2 were fabricated, after the resist film R2 was formed, the portion of the resist film R2 present in the peripheral portion of the substrate including the edge portion SR was removed.

本發明者們針對已製作之實施例基板W1及比較例基板W2，測定通過各基板之中心之直線上之抗蝕劑膜R2之膜厚分佈。圖8係顯示實施例基板W1及比較例基板W2之抗蝕劑膜R2之膜厚分佈之一部分之圖。於圖8中，與實施例基板W1及比較例基板W2之模式性俯視圖一起，由放大之圖表顯示模式性俯視圖中由虛線包圍之2個部分之膜厚分佈。The inventors of the present invention measured the film thickness distribution of the resist film R2 on a straight line passing through the center of each substrate for the prepared example substrate W1 and comparative example substrate W2. FIG. 8 is a diagram showing part of the film thickness distribution of the resist film R2 of the substrate W1 of the example and the substrate W2 of the comparative example. In FIG. 8 , together with the schematic top views of the example substrate W1 and the comparative example substrate W2 , the film thickness distributions of two portions surrounded by dotted lines in the schematic top views are shown in enlarged graphs.

於圖8之圖表中，縱軸顯示抗蝕劑膜R2之膜厚，橫軸顯示通過基板之中心之直線L上之位置。實施例基板W1及比較例基板W2之直徑均為300 mm。於橫軸上，「147.0」顯示直線L上自基板W之中心向一方向(於圖8之例中為右方向)分離147 mm之位置。又，「-147.0」顯示直線L上自基板W之中心向反方向(於圖8之例中為左方向)分離147 mm之位置。又，於橫軸上，以空白之箭頭顯示直線L上之落差ST之位置。再者，於圖8之圖表中，實線顯示與實施例基板W1對應之膜厚分佈，一點劃線顯示與比較例基板W2對應之膜厚分佈。In the graph of FIG. 8, the vertical axis shows the film thickness of the resist film R2, and the horizontal axis shows the position on the straight line L passing through the center of the substrate. The diameters of the substrate W1 of the example and the substrate W2 of the comparison example are both 300 mm. On the horizontal axis, "147.0" indicates a position separated by 147 mm from the center of the substrate W in one direction (rightward direction in the example of FIG. 8 ) on the straight line L. Also, "-147.0" indicates a position separated by 147 mm from the center of the substrate W in the opposite direction (left direction in the example of FIG. 8 ) on the straight line L. Also, on the horizontal axis, the position of the drop ST on the straight line L is indicated by a blank arrow. Furthermore, in the graph of FIG. 8 , the solid line shows the film thickness distribution corresponding to the substrate W1 of the example, and the one-dot dash line shows the film thickness distribution corresponding to the substrate W2 of the comparative example.

如圖8所示，形成於實施例基板W1之落差ST及其附近之抗蝕劑膜R2之膜厚與形成於比較例基板W2之落差ST及其附近之抗蝕劑膜R2之膜厚相比非常小。藉此，可確認形成於實施例基板W1之抗蝕劑膜R2之膜厚分佈與形成於比較例基板W2之抗蝕劑膜R2之膜厚分佈相比更均一化。As shown in FIG. 8, the film thickness of the resist film R2 formed on the step ST and its vicinity of the substrate W1 of the example is compared with the film thickness of the resist film R2 formed on the step ST of the substrate W2 of the comparative example and its vicinity. very small. Accordingly, it was confirmed that the film thickness distribution of the resist film R2 formed on the example substrate W1 was more uniform than the film thickness distribution of the resist film R2 formed on the comparative example substrate W2.

[7]其他實施形態 (1)於上述實施形態之圖4之基板W中，形成於邊緣部SR與內側區域IA之邊界之落差ST雖包含2個落差，但本發明不限定於此。於成為處理對象之基板W中，落差ST可僅包含1個落差。又，落差ST亦可形成為於基板W之縱剖面中，邊緣部SR之內周面與內側區域IA以曲線連接。 [7] Other implementation forms (1) In the substrate W in FIG. 4 of the above embodiment, the step ST formed at the boundary between the edge portion SR and the inner region IA includes two steps, but the present invention is not limited thereto. In the substrate W to be processed, the step ST may include only one step. In addition, the step ST may be formed so that in the vertical section of the substrate W, the inner peripheral surface of the edge portion SR and the inner region IA are connected by a curved line.

(2)於上述實施形態之圖6之例中，雖液膜形成步驟中設定之基板W之轉速s3、s1、s2、s4以依序變高之方式設定，但轉速s1～s4之關係不限定於上述之例。轉速s1～s4之各者只要設定於上述實施形態中例示之速度之範圍內即可。(2) In the example of FIG. 6 of the above-mentioned embodiment, although the rotation speeds s3, s1, s2, and s4 of the substrate W set in the liquid film forming step are set to increase sequentially, the relationship between the rotation speeds s1 to s4 is not the same. limited to the above examples. Each of the rotational speeds s1 to s4 should just be set within the range of the speed illustrated in the said embodiment.

(3)於上述實施形態之圖6之例中，雖於液膜形成步驟進行預潤濕，但本發明不限定於此。亦可於液膜形成步驟中不進行預潤濕。(3) In the example of FIG. 6 of the above embodiment, prewetting is performed in the liquid film formation step, but the present invention is not limited thereto. Pre-wetting may not be performed in the liquid film forming step.

(4)於上述實施形態之圖6之例中，雖於液膜形成步驟中，對旋轉之基板W之上表面S1供給抗蝕劑液R1，但本發明不限定於此。亦可於液膜形成步驟中，對停止旋轉之基板W供給特定量之抗蝕劑液R1之後，藉由於停止抗蝕劑液R1之供給之狀態下使基板W旋轉而對基板W之上表面S1整體塗佈抗蝕劑液R1。(4) In the example of FIG. 6 of the above embodiment, the resist liquid R1 is supplied to the upper surface S1 of the rotating substrate W in the liquid film forming step, but the present invention is not limited thereto. In the liquid film forming step, after supplying a specific amount of resist liquid R1 to the substrate W whose rotation is stopped, the upper surface of the substrate W may be formed by rotating the substrate W while the supply of the resist liquid R1 is stopped. S1 coats the resist liquid R1 as a whole.

(5)於上述實施形態之塗佈處理裝置1中，雖為對基板W之下表面S2供給清洗液而設置4個下表面噴嘴17，但本發明不限定於此。對基板W之下表面S2供給清洗液之下表面噴嘴17可為1個，可為2個，亦可為3個。或，下表面噴嘴17之數量亦可為5個以上。(5) In the coating processing apparatus 1 of the above-mentioned embodiment, the four lower surface nozzles 17 are provided for supplying the cleaning liquid to the lower surface S2 of the substrate W, but the present invention is not limited thereto. The lower surface nozzle 17 for supplying the cleaning liquid to the lower surface S2 of the substrate W may be one, two, or three. Alternatively, the number of nozzles 17 on the lower surface may be five or more.

(6)於上述實施形態之塗佈處理裝置1中，雖作為塗佈液對基板W供給抗蝕劑液R1，但本發明並非限定於此。於塗佈處理裝置1中，可將防反射膜用之塗佈液供給至基板W。或，於塗佈處理裝置1中，亦可將SOC(Spin On Carbon：旋塗碳)膜、SOG(Spin On Glass：旋塗玻璃)膜或SiARC(Si-rich Anti Reflective Coating：富矽防反射塗層)膜用之塗佈液供給至基板W。(6) In the coating processing apparatus 1 of the above-described embodiment, the resist liquid R1 is supplied to the substrate W as the coating liquid, but the present invention is not limited thereto. In the coating processing apparatus 1, the coating liquid for an antireflection film can be supplied to the board|substrate W. Alternatively, in the coating processing device 1, SOC (Spin On Carbon: spin-on carbon) film, SOG (Spin On Glass: spin-on glass) film or SiARC (Si-rich Anti Reflective Coating: silicon-rich anti-reflection Coating liquid for coating) film is supplied to the substrate W.

(7)於上述實施形態中，雖將液膜乾燥步驟之中間時點規定為於液膜乾燥步驟之開始時點之後，基板W之中央區域上之抗蝕劑液R1乾燥且存在於圓環區域上之抗蝕劑液R1流動之狀態之期間內，但本發明不限定於此。液膜乾燥步驟之中間時點不限定於上述期間，只要規定於液膜乾燥步驟之開始時點之後且結束時點之前即可。(7) In the above-mentioned embodiment, although the intermediate time point of the liquid film drying step is defined as after the start time point of the liquid film drying step, the resist liquid R1 on the central area of the substrate W is dried and exists on the circular ring area. During the period when the resist liquid R1 is flowing, but the present invention is not limited thereto. The middle time point of the liquid film drying step is not limited to the above period, as long as it is specified after the start time point and before the end time point of the liquid film drying step.

[8]技術方案之各構成要件與實施形態之各要件之對應關係 以下，就技術方案之各構成要件與實施形態之各要件之對應之例進行說明。於上述實施形態中，抗蝕劑膜R2為塗佈膜之例，塗佈處理裝置1為塗佈處理裝置之例，上表面S1為第1面之例，下表面S2為第2面之例，邊緣部SR為凸部之例，旋轉保持裝置10為旋轉保持部之例，抗蝕劑液R1為塗佈液之例，液體供給裝置20為塗佈液供給部之例，控制部30為控制部之例，且下表面噴嘴17及清洗液供給系統18為清洗液供給部之例。 [8] Correspondence between each constituent element of the technical solution and each element of the implementation form Hereinafter, an example of correspondence between each constituent requirement of the technical solution and each requirement of the embodiment will be described. In the above embodiment, the resist film R2 is an example of a coating film, the coating processing device 1 is an example of a coating processing device, the upper surface S1 is an example of the first surface, and the lower surface S2 is an example of the second surface. , the edge portion SR is an example of a convex portion, the rotation holding device 10 is an example of a rotation holding section, the resist liquid R1 is an example of a coating liquid, the liquid supply device 20 is an example of a coating liquid supply section, and the control unit 30 is The control part is an example, and the lower surface nozzle 17 and the cleaning liquid supply system 18 are examples of the cleaning liquid supply part.

又，液膜乾燥步驟之開始時點(圖6之時點t8)為第1時點之例，液膜乾燥步驟之中間時點(圖6之時點t9)為第2時點之例，液膜乾燥步驟之結束時點(圖6之時點t10)為第3時點之例，液膜乾燥步驟之基板W之轉速s5為第1轉速之例，液膜乾燥步驟之基板W之轉速s6為第2轉速之例，背面清洗步驟之基板W之轉速s8為第3轉速之例。作為技術方案之各構成要件，亦可使用具有技術方案所記載之構成或功能之其他各種要件。Again, the beginning of the liquid film drying step (time point t8 in Figure 6) is an example of the first time point, the middle time point of the liquid film drying step (time point t9 in Figure 6) is an example of the second time point, and the end of the liquid film drying step The time point (time point t10 in FIG. 6) is an example of the third time point, the rotational speed s5 of the substrate W in the liquid film drying step is an example of the first rotational speed, and the rotational speed s6 of the substrate W in the liquid film drying step is an example of the second rotational speed. The rotation speed s8 of the substrate W in the cleaning step is an example of the third rotation speed. As each constituent element of the technical proposal, various other elements having the constitution or function described in the technical proposal may also be used.

1:塗佈處理裝置 10:旋轉保持裝置 11:吸附保持部 11u:上表面 12:旋轉軸 13:旋轉驅動部 14:吸引裝置 15:杯 15d:排出口 15x:底部 15y:外周壁部 16:排液導管 17:下表面噴嘴 17b:液體噴出口 18:清洗液供給系統 20:液體供給裝置 21:抗蝕劑噴嘴 22:塗佈液供給系統 23:溶劑噴嘴 24:溶劑供給系統 30:控制部 h:吸引孔 IA:內側區域 L:直線 N:缺口 p1:期間 p2:期間 R1:抗蝕劑液 R2:抗蝕劑膜 RP:邊緣部 S1:上表面 S2:下表面 s1～s8:轉速 SR:邊緣部 ST:落差 t1～t11:時點 vp:吸氣路徑 W:基板 W1:實施例基板 W2:比較例基板 1: Coating processing device 10: Rotation holding device 11: Adsorption and holding part 11u: upper surface 12: Rotation axis 13: Rotary drive unit 14: Suction device 15: Cup 15d: outlet 15x: bottom 15y: Peripheral wall 16: Drain catheter 17: Bottom surface nozzle 17b: Liquid ejection port 18: Cleaning fluid supply system 20: Liquid supply device 21: Resist nozzle 22: Coating liquid supply system 23: Solvent nozzle 24: Solvent supply system 30: Control Department h: suction hole IA: medial area L: Straight line N: notch p1: period p2: period R1: Resist solution R2: resist film RP: Edge S1: upper surface S2: lower surface s1～s8: speed SR: Edge ST: drop t1～t11: time point vp: suction path W: Substrate W1: Example substrate W2: Comparative example substrate

圖1係本發明之一實施形態之塗佈處理裝置之模式性剖視圖。 圖2係圖1之塗佈處理裝置之模式性俯視圖。 圖3係成為圖1之塗佈處理裝置之處理對象之基板之俯視圖。 圖4係圖3之基板之A-A線剖視圖。 圖5係顯示液膜乾燥步驟中於基板W之邊緣部與內側區域之邊界之落差滯留抗蝕劑液之例之圖。 圖6係顯示本發明之一實施形態之塗佈處理中之基板之轉速之控制例之圖。 圖7係顯示圖6之液膜乾燥步驟中存在於基板之邊緣部及其周邊部之抗蝕劑液或抗蝕劑膜之狀態之變化之圖。 圖8係顯示實施例基板及比較例基板之抗蝕劑膜之膜厚分佈之一部分之圖。 Fig. 1 is a schematic cross-sectional view of a coating processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic plan view of the coating treatment device in FIG. 1 . Fig. 3 is a plan view of a substrate to be processed by the coating processing apparatus of Fig. 1 . FIG. 4 is a cross-sectional view along line A-A of the substrate of FIG. 3 . FIG. 5 is a diagram showing an example of a resist liquid stagnant at a step between the edge portion of the substrate W and the inner region in the liquid film drying step. Fig. 6 is a diagram showing an example of control of the rotational speed of the substrate in the coating process according to the embodiment of the present invention. FIG. 7 is a diagram showing changes in the state of the resist liquid or the resist film existing at the edge portion and the peripheral portion of the substrate in the liquid film drying step of FIG. 6 . FIG. 8 is a graph showing part of the film thickness distribution of the resist film of the example substrate and the comparative example substrate.

p1:期間 p1: period

p2:期間 p2: period

R1:抗蝕劑液 R1: Resist solution

R2:抗蝕劑膜 R2: resist film

S1:上表面 S1: upper surface

s1~s6:轉速 s1~s6: speed

s8:轉速 s8: speed

t1~t11:時點 t1~t11: time point

W:基板 W: Substrate

Claims (10)

一種塗佈處理方法，其係於至少一部分具有圓形狀之外周部之基板，形成塗佈膜之塗佈處理方法，且 上述基板具有相互面向反方向之第1面及第2面， 於上述第1面，形成向與上述第1面正交之方向突出且沿上述外周部延伸之圓環狀之凸部， 上述塗佈處理方法包含以下步驟： 以上述第1面面向上方之方式以水平姿勢保持上述基板； 對上述第1面供給塗佈液，藉由於塗佈液之供給中或供給後使以水平姿勢保持之上述基板繞鉛直軸旋轉而將塗佈液擴展至該第1面整體；及 於擴展上述塗佈液之步驟之後，藉由使以水平姿勢保持之上述基板繞鉛直軸旋轉而使上述基板乾燥；且 使上述基板乾燥之步驟包含： 於第1時點至上述第1時點之後之第2時點之間，使上述基板以第1轉速旋轉；及 於上述第2時點至上述第2時點之後之第3時點之間，使上述基板以高於上述第1轉速之第2轉速旋轉。 A coating treatment method, which is a coating treatment method for forming a coating film on a substrate having at least a part of a circular outer peripheral portion, and The above-mentioned substrate has a first surface and a second surface facing opposite directions to each other, On the above-mentioned first surface, an annular convex portion protruding in a direction perpendicular to the above-mentioned first surface and extending along the above-mentioned outer peripheral portion is formed, Above-mentioned coating processing method comprises the following steps: holding the substrate in a horizontal posture with the first surface facing upward; supplying the coating liquid to the above-mentioned first surface, and spreading the coating liquid over the entire first surface by rotating the above-mentioned substrate held in a horizontal posture around a vertical axis during or after supplying the coating liquid; and drying the above-mentioned substrate by rotating the above-mentioned substrate held in a horizontal posture around a vertical axis after the step of spreading the above-mentioned coating liquid; and The step of making the above-mentioned substrate dry comprises: rotating the substrate at a first rotational speed between a first time point and a second time point after the first time point; and The substrate is rotated at a second rotation speed higher than the first rotation speed between the second timing and a third timing after the second timing. 如請求項1之塗佈處理方法，其進而包含於使上述基板乾燥之步驟之後，邊使上述基板以低於上述第1轉速之第3轉速旋轉，邊對上述第2面供給清洗液之步驟。The coating treatment method according to claim 1, further comprising the step of supplying a cleaning solution to the second surface while rotating the substrate at a third rotation speed lower than the first rotation speed after the step of drying the substrate . 如請求項1或2之塗佈處理方法，其中將上述第2時點規定為擴展於上述第1面上之塗佈液中上述第1面之中央區域所存在之部分為乾燥、且包圍上述第1面之上述中央區域之區域上所存在之部分為流動之狀態之期間內。The coating treatment method according to claim 1 or 2, wherein the second point of time is defined as the part existing in the central region of the first surface of the coating solution spread on the first surface is dry and surrounds the first surface During the period when the part existing in the area of the above-mentioned central area on the 1st surface is in a state of flow. 如請求項1或2之塗佈處理方法，其中將上述第2時點規定為經過上述第1時點後供給至上述第1面之塗佈液之表面所產生之干涉條紋消失之前之時點。The coating treatment method according to claim 1 or 2, wherein the second time point is defined as the time point before the interference fringes generated on the surface of the coating liquid supplied to the first surface after the first time point have elapsed disappear. 如請求項1或2之塗佈處理方法，其中上述第2轉速高於上述第1轉速之2倍之轉速。The coating treatment method according to claim 1 or 2, wherein the second rotation speed is higher than twice the first rotation speed. 一種塗佈處理裝置，其係於至少一部分具有圓形狀之外周部之基板形成塗佈膜之塗佈處理裝置，且 上述基板具有相互面向反方向之第1面及第2面， 於上述第1面，形成向與該第1面正交之方向突出且沿上述外周部延伸之圓環狀之凸部， 上述塗佈處理裝置包含： 旋轉保持部，其以上述第1面面向上方之方式以水平姿勢保持上述基板，且使其繞鉛直軸旋轉； 塗佈液供給部，其對上述第1面供給塗佈液；及 控制部，其以對上述第1面供給塗佈液之方式控制上述塗佈液供給部，以藉由塗佈液之供給中或供給後以水平姿勢保持之上述基板繞上述鉛直軸旋轉而使塗佈液擴展至該第1面整體之方式，控制上述旋轉保持部；且 上述控制部 於塗佈液擴展至上述第1面整體後，於第1時點至上述第1時點之後之第2時點之間，以水平姿勢保持之上述基板以第1轉速旋轉，於上述第2時點至上述第2時點之後之第3時點之間，以水平姿勢保持之上述基板以高於上述第1轉速之第2轉速旋轉，藉此使上述基板乾燥，以此方式進一步控制上述旋轉保持部。 A coating processing device, which is a coating processing device for forming a coating film on a substrate having at least a part of a circular outer peripheral portion, and The above-mentioned substrate has a first surface and a second surface facing opposite directions to each other, On the above-mentioned first surface, an annular convex portion protruding in a direction perpendicular to the first surface and extending along the above-mentioned outer peripheral portion is formed, The above-mentioned coating treatment device includes: a rotation holding unit that holds the substrate in a horizontal posture with the first surface facing upward, and rotates it around a vertical axis; a coating solution supply unit that supplies a coating solution to the first surface; and The control unit controls the coating solution supply unit to supply the coating solution to the first surface so that the substrate held in a horizontal posture during or after the supply of the coating solution rotates around the vertical axis. Control the above-mentioned rotating holding part in such a way that the coating liquid spreads to the whole of the first surface; and The above-mentioned control department After the coating liquid has spread to the entire first surface, the substrate held in a horizontal posture is rotated at the first rotational speed between the first time point and the second time point after the first time point, and is rotated at the first speed between the second time point and the Between the second time point and the third time point after the second time point, the substrate held in a horizontal posture is rotated at a second rotation speed higher than the first rotation speed, thereby drying the substrate, and further controlling the rotation holding unit in this way. 如請求項6之塗佈處理裝置，其進而包含對上述第2面供給清洗液之清洗液供給部， 上述控制部於上述基板藉由以上述第2轉速旋轉而乾燥之後，以上述基板以低於上述第1轉速之第3轉速旋轉之方式進一步控制上述旋轉保持部，且以對以上述第3轉速旋轉之上述基板之上述第2面供給清洗液之方式進一步控制上述清洗液供給部。 The coating treatment device according to claim 6, which further includes a cleaning liquid supply unit for supplying the cleaning liquid to the second surface, After the substrate is dried by rotating the substrate at the second rotation speed, the control unit further controls the rotation holding unit so that the substrate rotates at a third rotation speed lower than the first rotation speed, and the third rotation speed is controlled accordingly. The manner in which the cleaning solution is supplied to the second surface of the rotating substrate further controls the cleaning solution supply unit. 如請求項6或7之塗佈處理裝置，其中將上述第2時點規定為擴展於上述第1面上之塗佈液中上述第1面之中央區域所存在之部分為乾燥，且包圍上述第1面之上述中央區域之區域上所存在之部分為流動之狀態之期間內。The coating treatment device according to claim 6 or 7, wherein the second point of time is defined as the part existing in the central region of the first surface of the coating liquid spread on the first surface is dry, and surrounds the first surface During the period when the part existing in the area of the above-mentioned central area on the 1st surface is in a state of flow. 如請求項6或7之塗佈處理裝置，其中將上述第2時點規定為經過上述第1時點後供給至上述第1面之塗佈液之表面所產生之干涉條紋消失之前之時點。The coating processing device according to claim 6 or 7, wherein the second time point is defined as a time point before the interference fringes generated on the surface of the coating liquid supplied to the first surface after the first time point have elapsed disappear. 如請求項6或7之塗佈處理裝置，其中上述第2轉速高於上述第1轉速之2倍之轉速。The coating treatment device according to claim 6 or 7, wherein the second rotation speed is higher than twice the first rotation speed.
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