CN115365085A - Coating method and coating apparatus - Google Patents
Coating method and coating apparatus Download PDFInfo
- Publication number
- CN115365085A CN115365085A CN202210531848.1A CN202210531848A CN115365085A CN 115365085 A CN115365085 A CN 115365085A CN 202210531848 A CN202210531848 A CN 202210531848A CN 115365085 A CN115365085 A CN 115365085A
- Authority
- CN
- China
- Prior art keywords
- substrate
- coating
- rotation speed
- time point
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 172
- 239000011248 coating agent Substances 0.000 title claims abstract description 141
- 239000000758 substrate Substances 0.000 claims abstract description 378
- 239000007788 liquid Substances 0.000 claims abstract description 204
- 238000001035 drying Methods 0.000 claims description 58
- 230000002093 peripheral effect Effects 0.000 claims description 58
- 238000012545 processing Methods 0.000 claims description 39
- 238000004140 cleaning Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 9
- 230000007480 spreading Effects 0.000 claims description 4
- 238000003892 spreading Methods 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 11
- 101100441413 Caenorhabditis elegans cup-15 gene Proteins 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 206010066901 Treatment failure Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/0208—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work for applying liquid or other fluent material to separate articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Abstract
The present invention relates to a coating method and a coating apparatus. The substrate of the present invention has an upper surface and a lower surface, and an annular convex portion is formed on the upper surface. The substrate is held in a horizontal posture. A coating liquid is supplied to the upper surface of the substrate. The coating liquid is spread over the entire upper surface by rotating the substrate around the vertical axis during or after the supply of the coating liquid. Thereafter, the substrate is dried by rotating the substrate about a vertical axis. When the substrate is dried, the substrate is rotated at the 1 st rotation speed between the 1 st time point and the 2 nd time point after the 1 st time point. In addition, the substrate is rotated at a 2 nd rotation speed higher than the 1 st rotation speed between the 2 nd time point and a 3 rd time point after the 2 nd time point.
Description
Technical Field
The present invention relates to a coating method and a coating apparatus for forming a coating film on a substrate.
Background
A substrate processing apparatus is used for performing various processes on a substrate such as a semiconductor substrate, a substrate for FPD (Flat Panel Display) such as a liquid crystal Display device or an organic EL (Electro Luminescence) Display device, a substrate for optical disc, a substrate for magnetic disc, a substrate for magneto-optical disc, a substrate for photomask, a ceramic substrate, or a substrate for solar cell.
As an example of the substrate processing apparatus, there is a coating processing apparatus that forms a coating film such as a resist film or an antireflection film on an upper surface of a substrate. In the coating processing apparatus, for example, a substrate is held in a horizontal posture by a spin chuck. In addition, the substrate held by the spin chuck is rotated. A coating liquid corresponding to the type of a coating film to be formed is supplied to the upper surface of the rotating substrate. The coating liquid supplied onto the substrate is diffused to the entire upper surface of the substrate by centrifugal force. The coating film is formed by drying the coating liquid on the substrate.
In order to reduce the cost required for the coating process, it is desirable to reduce the amount of coating liquid used per one substrate. In addition, even when the amount of the coating liquid used per one substrate is relatively small, it is desirable to form a coating film uniformly on one surface of the substrate. In view of the above, in a resist coating method described in, for example, japanese patent laid-open No. 2010-212658, after the supply of the resist solution to the substrate is started, the rotation speed of the substrate is changed to a plurality of levels with the lapse of time. After the resist solution is applied to the substrate, the substrate is rotated at a constant rotation speed for a predetermined period of time in order to dry the resist solution.
Disclosure of Invention
In recent years, thinning of a substrate has been advanced for the purpose of realizing miniaturization and weight reduction of a semiconductor device. It is difficult to handle a significantly thinned substrate. On the other hand, a substrate having a substantially circular shape and an annular projection along an outer peripheral end of the substrate on one surface of the substrate is known (see, for example, japanese patent laid-open No. 2012-146889). The substrate has an annular convex portion functioning as a reinforcing portion, thereby improving the handleability.
A step is formed on one surface of the substrate inside the annular projection. Therefore, in the coating process for forming a coating film on one surface of a substrate, if the coating liquid remains at the inner peripheral end portion of the annular convex portion, a processing defect of the substrate may occur due to the remaining coating liquid. Alternatively, particles may be generated by the remaining coating liquid.
The invention aims to provide a coating processing method and a coating processing device which can prevent the processing failure of a substrate and the pollution of the substrate caused by the residue of unnecessary coating liquid on the substrate.
(1) A coating method according to an aspect of the present invention is a coating method for forming a coating film on a substrate having at least a portion thereof with a circular outer peripheral portion, the substrate having a 1 st surface and a 2 nd surface facing opposite directions to each other, the 1 st surface having an annular projection projecting in a direction orthogonal to the 1 st surface and extending along the outer peripheral portion, the coating method including the steps of: holding the substrate in a horizontal posture with the 1 st surface facing upward; supplying the coating liquid to the 1 st surface, and spreading the coating liquid over the 1 st surface by rotating the substrate held in a horizontal posture around a vertical axis during or after the supply of the coating liquid; and drying the substrate by rotating the substrate held in a horizontal posture about a vertical axis after the step of expanding the coating liquid; and the step of drying the substrate comprises: rotating the substrate at a 1 st rotation speed between a 1 st time point and a 2 nd time point after the 1 st time point; and rotating the substrate at a 2 nd rotation speed higher than the 1 st rotation speed between the 2 nd time point and a 3 rd time point after the 2 nd time point.
In the coating processing method, the substrate is held in a horizontal posture with the 1 st surface facing upward. Further, the coating liquid was supplied to the 1 st surface. Further, the substrate is rotated during or after the supply of the coating liquid, and the coating liquid is spread over the entire 1 st surface. After spreading the coating liquid over the 1 st surface, the substrate is rotated at the 1 st rotation speed from the 1 st point to the 2 nd point in order to dry the substrate. Thereby, the coating liquid having fluidity and located in the central portion of the substrate moves to the outer peripheral portion of the substrate. Therefore, the central portion of the 1 st surface of the substrate is dried.
Next, the substrate is rotated at a 2 nd rotation speed higher than the 1 st rotation speed from the 2 nd time point to the 3 rd time point. In this case, a larger centrifugal force acts on the coating liquid flowing in the outer peripheral portion of the substrate and its vicinity. In addition, a larger gas flow is generated in the space surrounding the substrate. Thus, most of the coating liquid flowing from the center to the outer periphery of the substrate on the 1 st surface scatters from the inner region of the annular convex portion to the outside of the substrate. In other words, unnecessary coating liquid guided to the inner edge of the annular convex portion on the 1 st surface is thrown off to the outside of the substrate.
As a result, it is possible to prevent the occurrence of processing defects of the substrate and contamination of the substrate due to the unnecessary coating liquid remaining on the substrate during the coating process.
(2) The coating treatment method may further include a step of rotating the substrate at a 3 rd rotation speed lower than the 1 st rotation speed and supplying the cleaning liquid to the 2 nd surface after the step of drying the substrate.
In this case, the amount of the cleaning liquid scattered from the substrate can be reduced as compared with the case where the cleaning liquid is supplied to the substrate rotating at the 1 st rotation speed. This prevents the cleaning liquid from adhering to the 1 st surface, which may cause a treatment failure.
(3) The 2 nd time point may be defined to extend over a period of time in which a portion of the coating liquid on the 1 st surface, which is present in the central region of the 1 st surface, is dry and a portion, which is present in a region surrounding the central region of the 1 st surface, is fluidized.
In this case, when the substrate is dried, the coating liquid existing in the region surrounding the central region of the 1 st surface from the 2 nd time point to the 3 rd time point is smoothly spun off.
(4) The 2 nd time point may be defined as a time point before the interference fringes generated on the surface of the coating liquid supplied to the 1 st surface disappear after the 1 st time point.
In this case, the substrate starts rotating at the 2 nd rotation speed before the interference fringes disappear. Thus, the coating liquid having fluidity and being present at the outer peripheral portion of the substrate and its vicinity is smoothly spun off.
(5) The 2 nd rotation speed may also be higher than a rotation speed 2 times the 1 st rotation speed.
In this case, a larger centrifugal force acts on the unnecessary coating liquid guided to the inner edge of the annular convex portion on the 1 st surface. In addition, a larger gas flow is generated in the space surrounding the substrate. This causes unnecessary coating liquid inside the annular convex portion to be more smoothly thrown off to the outside of the substrate.
(6) A coating apparatus according to another aspect of the present invention is a coating apparatus for forming a coating film on a substrate at least a part of which has a circular outer peripheral portion, the substrate having a 1 st surface and a 2 nd surface facing each other in opposite directions, the 1 st surface having an annular projection projecting in a direction orthogonal to the 1 st surface and extending along the outer peripheral portion, the coating apparatus including: a rotation holding part for holding the substrate in a horizontal posture with the 1 st surface facing upward and rotating the substrate around a vertical axis; a coating liquid supply unit for supplying a coating liquid to the 1 st surface; and a control section for controlling the coating liquid supply section so as to supply the coating liquid to the 1 st surface, and for controlling the rotation holding section so as to expand the coating liquid to the entire 1 st surface by rotating the substrate held in a horizontal posture during or after the supply of the coating liquid around a vertical axis; and the control part further controls the rotation holding part in such a manner that the substrate held in the horizontal posture is rotated at the 1 st rotation speed between the 1 st time point and the 2 nd time point after the 1 st time point after the coating liquid is spread on the whole 1 st surface, and the substrate held in the horizontal posture is rotated at the 2 nd rotation speed higher than the 1 st rotation speed between the 2 nd time point and the 3 rd time point after the 2 nd time point, thereby drying the substrate.
In the coating processing apparatus, the substrate is held in a horizontal posture with the 1 st surface facing upward. Further, the coating liquid was supplied to the 1 st surface. Further, the substrate is rotated during or after the supply of the coating liquid, and the coating liquid is spread over the entire 1 st surface. After spreading the coating liquid over the 1 st surface, the substrate is rotated at the 1 st rotation speed from the 1 st point to the 2 nd point in order to dry the substrate. Thereby, the coating liquid having fluidity and located at the central portion of the substrate moves to the outer peripheral portion of the substrate. Therefore, the central portion of the 1 st surface of the substrate is dried.
Next, the substrate is rotated at a 2 nd rotation speed higher than the 1 st rotation speed from the 2 nd time point to the 3 rd time point. In this case, a larger centrifugal force acts on the coating liquid flowing in the outer peripheral portion of the substrate and its vicinity. In addition, a larger gas flow is generated in the space surrounding the substrate. Thus, most of the coating liquid flowing from the center to the outer periphery of the substrate on the 1 st surface scatters from the inner region of the annular convex portion to the outside of the substrate. In other words, unnecessary coating liquid guided to the inner edge of the annular convex portion on the 1 st surface is thrown off to the outside of the substrate.
As a result, it is possible to prevent the occurrence of processing defects of the substrate and contamination of the substrate due to the unnecessary coating liquid remaining on the substrate during the coating process.
(7) The coating processing apparatus may further include a cleaning liquid supply unit configured to supply a cleaning liquid to the 2 nd surface, wherein the control unit may further control the spin holding unit so that the substrate is spun at a 3 rd rotation speed lower than the 1 st rotation speed after the substrate is spun and dried at the 2 nd rotation speed, and further control the cleaning liquid supply unit so that the cleaning liquid is supplied to the 2 nd surface of the substrate spun at the 3 rd rotation speed.
In this case, the amount of the cleaning liquid scattered from the substrate can be reduced as compared with the case where the cleaning liquid is supplied to the substrate rotating at the 1 st rotation speed. This prevents the cleaning liquid from adhering to the 1 st surface, which may cause a treatment failure.
(8) The 2 nd time point may be defined to extend over a period of time in which a portion of the coating liquid on the 1 st surface, which is present in the central region of the 1 st surface, is dry and a portion, which is present in a region surrounding the central region of the 1 st surface, is fluidized.
In this case, when the substrate is dried, the coating liquid existing in the region surrounding the central region of the 1 st surface from the 2 nd time point to the 3 rd time point is smoothly spun off.
(9) The 2 nd time point may be defined as a time point before the interference fringes generated on the surface of the coating liquid supplied to the 1 st surface disappear after the 1 st time point.
In this case, the substrate starts to rotate at the 2 nd rotation speed before the interference fringes disappear. Thus, the coating liquid having fluidity and being present at the outer peripheral portion of the substrate and its vicinity is smoothly spun off.
(10) The 2 nd rotational speed may also be a rotational speed 2 times higher than the 1 st rotational speed.
In this case, a larger centrifugal force acts on the unnecessary coating liquid guided to the inner edge of the annular convex portion on the 1 st surface. In addition, a larger gas flow is generated in the space surrounding the substrate. This causes unnecessary coating liquid inside the annular convex portion to be more smoothly thrown off to the outside of the substrate.
Drawings
Fig. 1 is a schematic cross-sectional view of a coating processing apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic plan view of the coating processing apparatus of fig. 1.
Fig. 3 is a plan view of a substrate to be processed in the coating processing apparatus of fig. 1.
Fig. 4 isbase:Sub>A sectional view taken along linebase:Sub>A-base:Sub>A of the substrate of fig. 3.
Fig. 5 is a diagram showing an example in which the resist solution is retained at the step height of the boundary between the edge portion and the inner region of the substrate W in the liquid film drying step.
Fig. 6 is a diagram showing an example of controlling the rotation speed of the substrate in the coating process according to the embodiment of the present invention.
Fig. 7 is a diagram showing changes in the state of the resist solution or the resist film present at the edge portion of the substrate and the peripheral portion thereof in the liquid film drying step of fig. 6.
Fig. 8 is a view showing a part of the film thickness distribution of the resist films of the example substrate and the comparative example substrate.
Detailed Description
Hereinafter, a coating method and a coating apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, a substrate refers to a substrate for FPD (Flat Panel Display), a semiconductor substrate, a substrate for optical disc, a substrate for magnetic disc, a substrate for magneto-optical disc, a substrate for photomask, a ceramic substrate, a substrate for solar cell, or the like used for a liquid crystal Display device, an organic EL (Electro Luminescence) Display device, or the like. In this embodiment, the upper surface of the substrate is a circuit formation surface (front surface), and the lower surface of the substrate is a surface (back surface) on the opposite side of the circuit formation surface. In this embodiment, the portion of the substrate where the notch is removed in a plan view has a circular shape. Details of the shape of the substrate will be described later.
[1] Integral construction of coating treatment device
Fig. 1 is a schematic cross-sectional view of a coating treatment apparatus according to an embodiment of the present invention, and fig. 2 is a schematic plan view of the coating treatment apparatus 1 of fig. 1. In fig. 2, some of the constituent elements of the coating processing apparatus 1 in fig. 1 are omitted from illustration. The substrate W in fig. 1 is indicated by a dashed line.
As shown in fig. 1, the coating processing apparatus 1 of the present embodiment mainly includes a rotary holding device 10, a liquid supply device 20, and a control unit 30. The spin holding apparatus 10 is configured to be capable of holding the center portion of the lower surface of the substrate W by suction and rotating the same.
The liquid supply device 20 includes a resist nozzle 21, a coating liquid supply system 22, a solvent nozzle 23, and a solvent supply system 24. The coating liquid supply system 22 supplies the resist liquid to the resist nozzle 21. The resist nozzle 21 discharges the supplied resist liquid onto the upper surface of the substrate W sucked and held by the rotary holding device 10 and rotated. The solvent supply system 24 supplies a solvent to the solvent nozzle 23. The solvent nozzle 23 ejects the supplied solvent onto the upper surface of the substrate W sucked and held by the spin holding device 10. Here, as the solvent supplied to the solvent nozzle 23, a solvent capable of dissolving a resist film formed on the substrate W by a coating process described later is used. The control Unit 30 includes a CPU (Central Processing Unit) and a memory, or a microcomputer, and controls the operations of the rotary holding device 10 and the liquid supply device 20.
A specific configuration of the rotary holding device 10 will be described. The rotary holding device 10 includes an adsorption holding part 11, a rotary shaft 12, a rotary driving part 13, a suction device 14, a cup 15, a drain pipe 16, a lower surface nozzle 17, and a cleaning liquid supply system 18.
The suction holding unit 11 has an upper surface 11u for suction holding the center of the lower surface of the substrate W, and is attached to the upper end of a rotating shaft 12 extending in the vertical direction. A plurality of suction holes h are formed in the upper surface 11u of the suction holding portion 11 (fig. 2). The rotation driving unit 13 rotates the rotation shaft 12 around its axis.
As shown by the thick broken line in fig. 1, an intake path vp is formed inside the suction holding portion 11 and the rotary shaft 12. The suction path vp is connected to the suction device 14. The suction device 14 includes a suction mechanism such as a suction device, for example, and sucks the ambient gas in the space above the upper surface 11u of the suction holding portion 11 through the suction path vp and the plurality of suction holes h and discharges the ambient gas to the outside of the coating processing apparatus 1.
As shown in fig. 2, the cup 15 is provided so as to surround the periphery of the suction holding portion 11 in a plan view, and is configured to be movable to a plurality of positions in the vertical direction by an unillustrated elevating mechanism. As shown in fig. 1, the cup 15 includes a bottom portion 15x and an outer peripheral wall portion 15y. The bottom portion 15x has a substantially circular ring shape. The inner peripheral end of the bottom portion 15x is bent upward by a certain height. The outer peripheral wall 15y is formed to extend upward from the outer peripheral end of the bottom portion 15x, to be bent to a predetermined height, and to extend obliquely upward toward the suction holding portion 11.
A discharge port 15d is formed in the bottom 15x of the cup 15. A drain pipe 16 is attached to a portion of the bottom 15x where the drain port 15d is formed. The lower end of the drain pipe 16 is connected to a drain system not shown.
As shown in fig. 2, a plurality of (4 in this example) lower surface nozzles 17 are provided between the inner peripheral end of the outer peripheral wall portion 15y of the cup 15 and the outer peripheral end of the suction holding portion 11 in a plan view. The plurality of lower surface nozzles 17 are arranged at equal angular intervals with reference to the center of the suction holding portion 11 so as to surround the suction holding portion 11 in a plan view. The upper end of each lower surface nozzle 17 is provided with a liquid discharge port 17b facing upward.
As shown in fig. 1, the liquid ejection ports 17b of the lower surface nozzles 17 face the lower surface of the substrate W held by the holding portion 11 at positions near the outer peripheral end of the holding portion 11. The coating processing apparatus 1 has a structure in which the rotary holding device 10 and the liquid supply device 20 are accommodated in a housing, not shown. The lower surface nozzle 17 is fixed to, for example, a frame of the coating processing apparatus 1. The lower surface nozzle 17 ejects the cleaning liquid supplied from the cleaning liquid supply system 18 from the liquid ejection port 17b to the lower surface of the substrate W.
The outline of the operation during the coating process will be described with respect to the coating apparatus 1 having the above-described configuration. When the coating process of the substrate W is started, the substrate W is first held in a horizontal posture by the suction holding portion 11. The cup 15 is positioned in the vertical direction so that the inner peripheral surface of the outer peripheral wall portion 15y faces the outer peripheral end portion of the substrate W in the horizontal direction. In this state, the solvent nozzle 23 is moved above the substrate W by a nozzle moving device not shown. A specific amount of solvent is ejected from the solvent nozzle 23 onto the upper surface of the substrate W. Thereafter, the solvent nozzle 23 is moved from a position above the substrate W to a position lateral to the substrate W. The substrate W is rotated by the operation of the rotation driving unit 13. Thereby, the upper surface of the substrate W is wetted with the solvent.
Next, the resist nozzle 21 is moved above the substrate W by a nozzle moving device not shown. In this state, a specific amount of resist liquid is discharged from the resist nozzle 21 onto the upper surface of the substrate W. Thereby, the resist solution is applied to the upper surface of the rotating substrate W. The resist liquid scattered outward from the rotating substrate W is received by the inner circumferential surface of the outer circumferential wall portion 15y of the cup 15. The received resist solution is collected in the bottom 15x of the cup 15 and guided from the discharge port 15d to a liquid discharge system not shown through a liquid discharge pipe 16. As described above, the step of applying the resist solution to the entire upper surface of the substrate W in the coating process of the substrate W, that is, the step of forming the liquid film of the resist solution on the entire upper surface of the substrate W is referred to as a liquid film forming step.
Then, while the resist solution is stopped being discharged from the resist nozzle 21 toward the substrate W, the substrate W continues to rotate, whereby an excess amount of the resist solution applied to the upper surface of the substrate W is thrown off. Further, the liquid film of the resist solution remaining on the substrate W is dried. Thereby, a resist film is formed on the upper surface of the substrate W. As described above, the step of drying the liquid film of the resist solution applied to the upper surface of the substrate W in the coating process of the substrate W is referred to as a liquid film drying step.
After a resist film is formed on the upper surface of the substrate W, a cleaning liquid is discharged from the lower surface nozzle 17 toward the lower surface of the substrate W in order to remove the resist liquid or the resist film adhering to the lower surface of the substrate W. As the cleaning liquid, a solvent capable of dissolving the resist film is used as in the case of the solvent supplied from the solvent nozzle 23 to the upper surface of the substrate W.
Thereafter, the discharge of the cleaning liquid from the lower surface nozzle 17 to the substrate W is stopped. In this state, the cleaning liquid applied to the lower surface of the substrate W is dried by continuing the rotation of the substrate W. Thereby, the resist solution or the solid substance of the resist adhering to the lower surface of the substrate W is removed. The substrate W on which the resist film is formed by the above-described series of operations of the coating processing apparatus 1 is carried out of the coating processing apparatus 1, and exposure processing is performed by an unillustrated exposure apparatus.
[2] Resist solution remaining on the substrate W in the liquid film drying step
Fig. 3 is a plan view of a substrate W to be processed in the coating processing apparatus 1 of fig. 1. Fig. 4 isbase:Sub>A sectional view taken along linebase:Sub>A-base:Sub>A of the substrate W of fig. 3. The substrate W of the present embodiment is a circular substrate having a diameter of about 300mm, and has an upper surface S1 and a lower surface S2 as shown in fig. 3 and 4. A notch N is formed in the outer peripheral end of the substrate W (fig. 3).
An annular convex portion that protrudes upward and extends along the outer peripheral end portion of the substrate W is formed on the upper surface S1 of the substrate W at a portion having a constant width from the outer peripheral end portion of the substrate W. The convex portion of the substrate W is referred to as an Outer support ring (Outer support ring) SR. In the substrate W, a thickness of a portion located inside the peripheral portion SR (thickness of the substrate) is 100 μm or less and is smaller than the thickness of the peripheral portion SR. The thickness of the edge portion SR is greater than 100 μm and 775 μm or less, for example, approximately 0.8mm.
In the following description, a region inside the edge portion RP on the upper surface S1 of the substrate W is referred to as an inside region IA. In fig. 4, an enlarged cross-sectional view of the edge portion SR and its peripheral portion in the cross-sectional view of the entire substrate W is shown in a counter frame.
As shown in the white frame of fig. 4, in the substrate W of the present embodiment, a step ST is formed at the boundary between the edge portion SR and the inner region IA. Thus, the step ST located at the inner peripheral end portion of the edge portion SR easily causes the resist solution to be retained in the liquid film drying step in the coating process of the substrate W. If the retained resist solution dries, the thickness of the resist film existing at or near the step ST is locally increased. Such variation in the thickness of the resist film causes exposure failure and particle generation.
Fig. 5 is a diagram showing an example in which the resist solution is retained at a step ST of a boundary between the edge portion SR and the inner region IA of the substrate W in the liquid film drying step. In fig. 5, the upper, middle, and lower stages are shown in the enlarged cross-sectional view in order of time series in the state of the resist solution R1 or the resist film R2 present at the edge portion SR of the substrate W and the peripheral portion thereof in the liquid film drying step.
As shown in the upper sectional view of fig. 5, at the start of the liquid film drying step, a liquid film of the resist liquid R1 having fluidity is formed on the upper surface S1 of the substrate W. As the substrate W rotates, a centrifugal force acts on the resist solution R1 from the center to the outer peripheral end of the substrate W. In addition, a gas flow is generated in the space surrounding the substrate W. As a result, as indicated by thick solid arrows in the middle sectional view of fig. 5, a part of the resist liquid R1 flowing in the upper layer portion of the liquid film is thrown off to the outside of the substrate W.
By throwing away the excess resist solution R1 flowing, the liquid film of the resist solution R1 is thinned and continuously dried from the center of the substrate W to the outer peripheral end portion of the upper surface S1 of the substrate W. At this time, as shown by the blank arrow in the cross-sectional view in the middle of fig. 5, if the resist solution R1 staying at the step ST is dried, the thickness of the resist film R2 formed at the step ST and its peripheral portion becomes thicker than other portions as shown in the cross-sectional view in the lower stage of fig. 5.
As described above, in order to prevent the resist solution from staying at the step ST, a method of significantly increasing the rotation speed of the substrate W during the liquid film drying step is considered. In this case, a larger centrifugal force acts on the resist solution R1 flowing through the upper layer portion of the liquid film in the liquid film drying step. In addition, a stronger gas flow is generated in the space surrounding the substrate W. However, if the rotation speed of the substrate W is significantly increased at the initial stage of the liquid film drying step, spots are generated across the entire resist film R2 formed on the substrate W.
Therefore, in the present embodiment, the rotation speed of the substrate W in the liquid film drying step is changed to 2 stages with the lapse of time. Specifically, the rotation speed of the substrate W is adjusted to the 1 st rotation speed at an intermediate point between the start of the liquid film drying step and the end of the liquid film drying step. Thereafter, the rotation speed of the substrate W is adjusted to the 2 nd rotation speed higher than the 1 st rotation speed between the intermediate time and the end time.
Here, a region of the inner region IA of the substrate W including the center of the substrate W and having a circular shape concentric with the center of the substrate W is referred to as a central region. A region of the inner region IA of the substrate W surrounding the central region and including the outer peripheral edge of the substrate W is referred to as an annular region. The diameter of the central region is, for example, about half the diameter of the substrate W.
In this case, the 1 st rotation speed is set to a speed at which the resist film R2 formed in the central region does not generate the spots by simulation, experiment, or the like, for example. On the other hand, the 2 nd rotation speed is set to a speed at which the resist solution R1 having fluidity does not stay at the step ST by simulation, experiment, or the like, for example. The intermediate time point is defined as a period of time in which the resist solution R1 on the central region of the substrate W is dried after the liquid film drying step is started and the resist solution R1 present on the annular region flows.
By adjusting the rotation speed of the substrate W as described above, the resist solution R1 in the central region can be dried without generating unevenness from the start time to the intermediate time of the liquid film drying step. On the other hand, a larger centrifugal force acts on the resist solution R1 flowing on the annular region from the intermediate point to the end point of the liquid film drying step. In addition, a stronger gas flow is generated in the space surrounding the substrate W. This prevents the resist solution R1 from staying at the step ST. Therefore, the step ST and the thickness of the resist film R2 in the peripheral portion thereof are prevented from being locally increased.
[3] Example of controlling the rotational speed of the substrate W in the coating process
Fig. 6 is a diagram showing an example of controlling the rotation speed of the substrate W in the coating process according to the embodiment of the present invention. In the upper stage of fig. 6, a graph shows a change in the rotation speed of the substrate W in the coating process in the coating apparatus 1 of fig. 1. In the upper graph of fig. 6, the vertical axis represents the rotation speed of the substrate W, and the horizontal axis represents time. The lower frames of fig. 6 show the state of the resist solution R1 or the resist film R2 existing on the substrate W at a plurality of points in the coating process, in plan view and in longitudinal section.
Fig. 7 is a diagram showing changes in the state of the resist solution R1 or the resist film R2 present in the edge portion SR of the substrate W and the peripheral portion thereof in the liquid film drying step of fig. 6. In fig. 7, the state of the resist solution R1 or the resist film R2 existing at the edge portion SR of the substrate W and the peripheral portion thereof in the liquid film drying step is shown in an enlarged sectional view in a time sequence of 4 steps from top to bottom.
The rotation speed of the substrate W is adjusted by the controller 30 by controlling the rotation driver 13 of fig. 1. The controller 30 controls the solvent supply system 24 of fig. 1 to supply and stop the solvent to and from the upper surface S1 of the substrate W. Further, the controller 30 controls the coating liquid supply system 22 of fig. 1 to supply and stop the resist liquid R1 to the upper surface S1 of the substrate W. The control unit 30 controls the cleaning liquid supply system 18 of fig. 1 to supply and stop the cleaning liquid to the lower surface S2 of the substrate W.
In the initial state of the coating process in the coating processing apparatus 1, the unprocessed substrate W having the configuration of fig. 3 and 4 is sucked and held in a horizontal posture by the suction and holding portion 11 of fig. 1. At this time, the rotation speed of the substrate W is maintained at 0. Further, the cup 15 is positioned in the vertical direction so that the inner peripheral surface of the outer peripheral wall portion 15y of the cup 15 faces the outer peripheral end portion of the substrate W.
As shown in fig. 6, the liquid film forming step is first started. In a period p1 from the time t1 to a time t2, a specific amount of solvent is supplied from the solvent nozzle 23 of fig. 1 to the upper surface S1 of the substrate W. As a result, a specific amount of solvent is held on the upper surface S1 of the substrate W as indicated by the white boxes corresponding to the time t 2.
Next, from time t3 to time t4, the rotation speed of the substrate W is increased from 0 to S1, and the solvent held on the upper surface S1 of the substrate W spreads from the center of the substrate W toward the outer peripheral end of the substrate W. The rotation speed s1 is set in a range of, for example, 500rpm to 1500 rpm.
As described above, the solvent is supplied to the upper surface S1 of the unprocessed substrate W to modify the upper surface S1 of the substrate W, so that the resist solution R1 easily spreads on the upper surface S1 of the substrate W. In this way, the process of modifying the upper surface S1 of the substrate W before the resist solution R1 is applied is referred to as prewetting. Furthermore, in the pre-wetting, the substrate W may also be rotated. In this case, the rotation speed of the substrate W is set in a range of, for example, more than 0rpm and 1000rpm or less.
Next, a specific amount of resist solution R1 is supplied from the resist nozzle 21 of fig. 1 to the upper surface S1 of the substrate W during a period p2 from time t4 to time t 6. At this time, from time t4 to time t5 before time t6, the rotation speed of the substrate W increases to s2 higher than s 1. Further, the rotation speed of the substrate W is maintained at s2 for a predetermined period from the time point t 5. The rotation speed s2 is set in a range of, for example, 1000rpm or more and 3000rpm or less. As a result, as indicated by the white boxes corresponding to the time t5, a block (kernel) of the resist solution R1 is formed in the central portion of the upper surface S1 of the substrate W. Further, from time t5 to time t6, the nuclei of the resist solution R1 are shaped.
After the rotation speed of the substrate W is maintained at s2 for a predetermined period from the time t5, the rotation speed of the substrate W decreases to s3 lower than s1 and s2 by the time t 6. The rotation speed of the substrate W is maintained at s3 for a predetermined period from the time t 6. The rotation speed s3 is set in a range of, for example, 0rpm to 500 rpm.
After a predetermined period of time has elapsed from time t6, the rotation speed of the substrate W increases to s4 higher than s2 by time t7, and the rotation speed of the substrate W is maintained at s4 for a predetermined period of time. The rotation speed s4 is set in a range of, for example, 0rpm to 3000 rpm. After a predetermined period of time has elapsed from time t7, the rotation speed of the substrate W decreases to s5, which is lower than s4, to time t 8. The rotation speed s5 is set in a range of, for example, 500rpm to 1500 rpm. From the time t6 to the time t8, the resist solution R1 spreads from the center of the substrate W toward the outer peripheral end. As a result, as indicated by the white frame corresponding to the time t8, the liquid film of the resist liquid R1 is formed on the entire upper surface S1 of the substrate W, and the liquid film forming step is completed.
Next, the liquid film drying step is started. In the liquid film drying step, the rotation speed of the substrate W is maintained at s5 from time t8 to time t 9. The time t8 corresponds to the start of the liquid film drying step. The rotation speed s5 corresponds to the 1 st rotation speed.
At time t8, as shown in the sectional view of section 1 from the top of fig. 7, a liquid film of the resist liquid R1 having fluidity is formed on the upper surface S1 of the substrate W. Between time t8 and time t9, the rotation speed of the substrate W is maintained at s5 (1 st rotation speed), and as indicated by thick solid arrows in the 2 nd cross-sectional view counted from the top of fig. 7, a part of the resist solution R1 flowing in the upper layer portion of the liquid film is thrown off to the outside of the substrate W. At this time, the resist solution R1 is dried in the central region of the substrate W in order from the center to the outer peripheral end of the substrate W.
The time t9 corresponds to an intermediate time of the liquid film drying step. At time t9, as shown in the white boxes corresponding to time t9 of fig. 6, a resist film R2 is formed in the central region of the upper surface S1 of the substrate W. On the other hand, in the annular region of the upper surface S1 of the substrate W, the resist solution R1 having fluidity flows from the center of the substrate W toward the outer peripheral end of the substrate W.
Thereafter, at time t9, the rotation speed of the substrate W is increased to s6, which is higher than s5. The rotation speed s6 is set in a range of, for example, 1500rpm or more and 3500rpm or less. From time t9 to time t10, the rotation speed of the substrate W is maintained at s6. The speed s6 corresponds to the 2 nd speed. The liquid film drying step ends at time t 10. Thus, at time t10, as shown in the dialogue box corresponding to time t10 of fig. 6, the resist film R2 is formed on the entire upper surface S1 of the substrate W. The time t10 corresponds to the end of the liquid film drying step.
While the rotation speed of the substrate W is maintained at s6 (rotation speed 2) between time t9 and time t10, the resist liquid R1 flowing in the upper portion of the liquid film is more strongly spun off to the outside of the substrate W as indicated by thick solid arrows in the 3 rd cross-sectional view from the top of fig. 7. This prevents the resist solution R1 from staying at the step ST and its peripheral portion, and the resist solution R1 present in the annular region of the substrate W is dried. Therefore, at time t10, as shown in the 4 th cross-sectional view from the top of fig. 7, the thickness of the resist film R2 formed at the step ST and its peripheral portion is substantially equal to that of the other portions. According to the result, at the end of the liquid film drying step, the resist film R2 is formed with a uniform thickness on the entire upper surface S1 of the substrate W including the step ST.
After the time t10, the rotation speed of the substrate W is maintained at s5 for a certain period. Thereafter, at time t11, the rotation speed decreases to s8, which is lower than s5 and s6. In this state, the cleaning liquid is supplied to the lower surface S2 of the substrate W from the plurality of lower surface nozzles 17 in fig. 1 for a predetermined period. Thereby, the resist solution R1 or the solid matter of the resist adhering to the lower surface S2 of the substrate W is removed by the cleaning solution.
In this way, in the step of cleaning the lower surface of the substrate W (so-called back surface cleaning step), the rotation speed of the substrate W is set to be lower than the rotation speed set in the liquid film drying step. Therefore, in the back surface cleaning step, the amount of the cleaning liquid scattered from the substrate W can be reduced as compared with the case where the substrate W is rotated at the rotation speed in the liquid film drying step. This prevents the cleaning liquid scattered from the lower surface S2 of the substrate W from adhering to the resist film R2 formed on the upper surface S1 of the substrate W. As a result, the occurrence of processing defects in the substrate W can be prevented. The back surface cleaning step is completed to end the coating process of the substrate W.
In the example of fig. 6, the length of time from time t8 to time t10 (time from the start to the end of the liquid film drying step) is, for example, 15 seconds or more and 30 seconds or less. The length of time from time t8 to time t9 is, for example, 10 seconds to 20 seconds.
[4] Intermediate timing of the liquid film drying step
As described above, the intermediate point of the liquid film drying step is defined as a period of time in which the resist solution R1 on the central region of the substrate W is dried and the resist solution R1 present on the annular region flows after the liquid film drying step is started.
Here, for example, in the example of fig. 6, when the rotation speed of the substrate W is constantly maintained at s5 in the liquid film drying step, interference fringes are generated in the resist solution R1 flowing in the upper layer portion of the liquid film before all the resist solution R1 on the substrate W is dried. The interference fringes can be visually observed depending on the rotation speed of the substrate W and the type of the resist solution R1.
Therefore, when the interference fringes can be confirmed, it is preferable to set the intermediate time point to a time point before the interference fringes generated on the surface of the resist solution R1 supplied onto the upper surface S1 of the substrate W disappear after the liquid film drying step is started. Thus, by increasing the rotation speed of the substrate W at the intermediate point of the liquid film drying step, the resist solution R1 having fluidity and existing on the outer peripheral portion of the substrate W and its vicinity can be smoothly spun off.
[5] Effect
(1) In the coating processing apparatus 1, a coating process is performed on a substrate W having an edge portion SR. The coating treatment includes a liquid film forming step and a liquid film drying step. First, in the liquid film forming step, the resist liquid R1 is supplied to the upper surface S1 of the rotating substrate W after the pre-wetting. Thereby, the resist solution is spread over the entire upper surface S1 of the substrate W, and the liquid film forming step is completed.
Next, in the liquid film drying step, the substrate W is rotated at the 1 st rotation speed from the start point to the intermediate point in order to dry the substrate W. Thereby, the resist liquid having fluidity and located in the central region of the substrate W moves to the outer peripheral portion of the substrate W. Therefore, the central region of the upper surface S1 of the substrate W is dried.
Next, the substrate W is rotated at the 2 nd rotation speed higher than the 1 st rotation speed from the intermediate point to the end point of the liquid film drying step. In this case, a larger centrifugal force acts on the resist solution R1 flowing in the outer peripheral portion of the substrate W and its vicinity. In addition, a larger gas flow is generated in the space surrounding the substrate W. Accordingly, most of the resist liquid R1 flowing from the center toward the outer peripheral portion of the substrate W on the upper surface S1 of the substrate W scatters from the central region of the substrate W to the outside of the substrate W beyond the edge portion SR. In other words, the unnecessary resist solution R1, which is guided by the step ST at the boundary between the edge portion SR and the inner region IA on the upper surface S1 of the substrate W, is thrown outward of the substrate W.
As a result, it is possible to prevent the occurrence of processing defects of the substrate W and contamination of the substrate W due to the resist solution R1 remaining on the substrate W, which is unnecessary in the coating process.
(2) In the example of fig. 6, the 2 nd rotation speed, i.e., s7, is set to a rotation speed 2 times higher than the 1 st rotation speed, i.e., s4. In this case, a larger centrifugal force acts on the unnecessary resist liquid R1 guided to the step ST located at the inner edge of the edge portion SR. In addition, a larger gas flow is generated in the space surrounding the substrate W. This causes the unnecessary resist solution R1 inside the edge portion SR to be more smoothly thrown off to the outside of the substrate W.
[6] Confirmation test
The present inventors performed the following confirmation test in order to confirm the effect of the coating treatment. First, the present inventors performed a coating process in accordance with the example of fig. 6 to produce a substrate W of the example. In the following description, the substrate W is referred to as an example substrate W1. The inventors also performed a coating process in accordance with the example of fig. 6, except that the rotation speed of the substrate W was kept constant at the 1 st rotation speed (s 5) during the liquid film drying step, thereby producing a substrate W of a comparative example. In the following description, the substrate W is referred to as a comparative example substrate W2. In the production of the example substrate W1 and the comparative substrate W2, the resist film R2 was formed, and then the portion of the resist film R2 existing in the peripheral portion of the substrate including the edge portion SR was removed.
The present inventors measured the film thickness distribution of the resist film R2 on a straight line passing through the center of each substrate with respect to the example substrate W1 and the comparative substrate W2 which had been produced. Fig. 8 is a diagram showing a part of the film thickness distribution of the resist film R2 on the example substrate W1 and the comparative substrate W2. In fig. 8, together with the schematic plan views of the example substrate W1 and the comparative substrate W2, the enlarged graph shows the film thickness distribution of 2 portions surrounded by the broken line in the schematic plan view.
In the graph of fig. 8, the vertical axis represents the film thickness of the resist film R2, and the horizontal axis represents the position on the straight line L passing through the center of the substrate. The diameter of each of the example substrate W1 and the comparative substrate W2 was 300mm. On the horizontal axis, "147.0" represents a position separated by 147mm in one direction (in the example of fig. 8, the right direction) from the center of the substrate W on the straight line L. Further, "-147.0" indicates a position separated by 147mm in the reverse direction (left direction in the example of fig. 8) from the center of the substrate W on the straight line L. On the horizontal axis, the position of the step ST on the straight line L is indicated by a blank arrow. In the graph of fig. 8, the solid line indicates the film thickness distribution corresponding to the example substrate W1, and the dashed dotted line indicates the film thickness distribution corresponding to the comparative example substrate W2.
As shown in fig. 8, the thickness of the resist film R2 formed at the step ST of the example substrate W1 and in the vicinity thereof is very small compared to the thickness of the resist film R2 formed at the step ST of the comparative example substrate W2 and in the vicinity thereof. This makes it possible to confirm that the film thickness distribution of the resist film R2 formed on the example substrate W1 is more uniform than the film thickness distribution of the resist film R2 formed on the comparative example substrate W2.
[7] Other embodiments
(1) In the substrate W of fig. 4 of the above embodiment, the step ST formed at the boundary between the edge portion SR and the inner region IA includes 2 steps, but the present invention is not limited to the above. The step ST may include only 1 step in the substrate W to be a processing object. The step ST may be formed so that the inner peripheral surface of the edge portion SR and the inner region IA are connected in a curved line in the vertical cross section of the substrate W.
(2) In the example of fig. 6 of the above embodiment, the rotation speeds s3, s1, s2, and s4 of the substrate W set in the liquid film forming step are set to be higher in order, but the relationship between the rotation speeds s1 to s4 is not limited to the above example. Each of the rotational speeds s1 to s4 may be set within the speed range exemplified in the above embodiment.
(3) In the example of fig. 6 of the embodiment, although the pre-wetting is performed in the liquid film forming step, the present invention is not limited to the above. It is also possible that no pre-wetting is performed during the liquid film forming step.
(4) In the example of fig. 6 of the above embodiment, the resist solution R1 is supplied to the upper surface S1 of the rotating substrate W in the liquid film forming step, but the present invention is not limited to the above. In the liquid film forming step, after a specific amount of the resist solution R1 is supplied to the substrate W whose rotation has been stopped, the resist solution R1 may be applied to the entire upper surface S1 of the substrate W by rotating the substrate W with the supply of the resist solution R1 stopped.
(5) In the coating processing apparatus 1 of the above embodiment, 4 lower surface nozzles 17 are provided to supply the cleaning liquid to the lower surface S2 of the substrate W, but the present invention is not limited to the above. The number of the lower surface nozzles 17 for supplying the cleaning liquid to the lower surface S2 of the substrate W may be 1, 2, or 3. Alternatively, the number of the lower surface nozzles 17 may be 5 or more.
(6) In the coating processing apparatus 1 of the above embodiment, the resist solution R1 is supplied as a coating solution to the substrate W, but the present invention is not limited to the above. In the coating processing apparatus 1, the coating liquid for the antireflection film may be supplied to the substrate W. Alternatively, the Coating apparatus 1 may supply a Coating liquid for an SOC (Spin On Carbon) film, an SOG (Spin On Glass) film, or a SiARC (Si-rich Anti-Reflective Coating) film to the substrate W.
(7) In the above embodiment, the intermediate time point of the liquid film drying step is defined as a period in which the resist solution R1 on the central region of the substrate W is dried and the resist solution R1 present on the annular region flows after the start time point of the liquid film drying step, but the present invention is not limited to this. The intermediate time of the liquid film drying step is not limited to the above-described period, and may be defined after the start time and before the end time of the liquid film drying step.
[8] Correspondence between each constituent element of claims and each element of embodiments
Hereinafter, examples of correspondence between the constituent elements of the claims and the elements of the embodiments will be described. In the above embodiment, the resist film R2 is an example of a coating film, the coating processing apparatus 1 is an example of a coating processing apparatus, the upper surface S1 is an example of a 1 st surface, the lower surface S2 is an example of a 2 nd surface, the edge portion SR is an example of a convex portion, the spin holding apparatus 10 is an example of a spin holding portion, the resist liquid R1 is an example of a coating liquid, the liquid supply apparatus 20 is an example of a coating liquid supply portion, the control portion 30 is an example of a control portion, and the lower surface nozzle 17 and the cleaning liquid supply system 18 are examples of a cleaning liquid supply portion.
The start time of the liquid film drying step (time t8 in fig. 6) is an example of the 1 st time, the intermediate time of the liquid film drying step (time t9 in fig. 6) is an example of the 2 nd time, the end time of the liquid film drying step (time t10 in fig. 6) is an example of the 3 rd time, the rotation speed s5 of the substrate W in the liquid film drying step is an example of the 1 st rotation speed, the rotation speed s6 of the substrate W in the liquid film drying step is an example of the 2 nd rotation speed, and the rotation speed s8 of the substrate W in the back side cleaning step is an example of the 3 rd rotation speed. As each constituent element of the claims, other various elements having the constitution or function described in the claims may be used.
Claims (10)
1. A coating method for forming a coating film on a substrate having a circular outer peripheral portion at least in part, the method comprising
The substrate has a 1 st surface and a 2 nd surface facing opposite directions to each other,
an annular convex portion protruding in a direction orthogonal to the 1 st surface and extending along the outer peripheral portion is formed on the 1 st surface,
the coating treatment method comprises the following steps:
holding the substrate in a horizontal posture with the 1 st face facing upward;
supplying a coating liquid to the 1 st surface, and spreading the coating liquid over the 1 st surface by rotating the substrate held in a horizontal posture around a vertical axis during or after the supply of the coating liquid; and
drying the substrate by rotating the substrate held in a horizontal posture about a vertical axis after the step of expanding the coating liquid; and is
The step of drying the substrate comprises:
rotating the substrate at a 1 st rotation speed between a 1 st time point and a 2 nd time point after the 1 st time point; and
rotating the substrate at a 2 nd rotation speed higher than the 1 st rotation speed between the 2 nd time point and a 3 rd time point after the 2 nd time point.
2. The coating treatment method according to claim 1, further comprising a step of rotating the substrate at a 3 rd rotation speed lower than the 1 st rotation speed and supplying a cleaning liquid to the 2 nd surface after the step of drying the substrate.
3. The coating treatment method according to claim 1 or 2, wherein the 2 nd timing is defined to extend over a period in which a portion of the coating liquid on the 1 st surface existing in a central region of the 1 st surface is dried and a portion existing in a region surrounding the central region of the 1 st surface flows.
4. The coating processing method according to any one of claims 1 to 3, wherein the 2 nd time point is defined as a time point before interference fringes produced by the surfaces of the coating liquids supplied to the 1 st surface disappear after the 1 st time point elapses.
5. The coating treatment method according to any one of claims 1 to 4, wherein the 2 nd rotation speed is a rotation speed 2 times higher than the 1 st rotation speed.
6. A coating processing device for forming a coating film on a substrate at least a part of which has a circular outer peripheral portion, the coating processing device
The substrate has a 1 st surface and a 2 nd surface facing opposite directions to each other,
an annular projection projecting in a direction orthogonal to the 1 st surface and extending along the outer peripheral portion is formed on the 1 st surface,
the coating processing device is provided with:
a rotation holding unit for holding the substrate in a horizontal posture with the 1 st surface facing upward and rotating the substrate around a vertical axis;
a coating liquid supply unit for supplying a coating liquid to the 1 st surface; and
a control section that controls the coating liquid supply section so as to supply the coating liquid to the 1 st surface, and controls the rotation holding section so as to spread the coating liquid over the entire 1 st surface by rotating the substrate held in a horizontal posture during or after the supply of the coating liquid around the vertical axis; and is provided with
The control part
After the coating liquid is spread on the 1 st surface, the substrate held in a horizontal posture is rotated at the 1 st rotation speed between the 1 st time and the 2 nd time after the 1 st time, and the substrate held in a horizontal posture is rotated at the 2 nd rotation speed higher than the 1 st rotation speed between the 2 nd time and the 3 rd time after the 2 nd time, thereby drying the substrate, and further controlling the rotation holding part.
7. The coating treatment apparatus according to claim 6, further comprising a cleaning liquid supply unit for supplying a cleaning liquid to the 2 nd surface,
the control unit further controls the spin-holding unit such that the substrate is rotated at the 3 rd rotation speed lower than the 1 st rotation speed after the substrate is spin-dried at the 2 nd rotation speed, and further controls the cleaning liquid supply unit such that a cleaning liquid is supplied to the 2 nd surface of the substrate rotated at the 3 rd rotation speed.
8. The coating processing apparatus according to claim 6 or 7, wherein the 2 nd timing is defined to extend over a period in which a portion of the coating liquid on the 1 st surface existing in a central region of the 1 st surface is dried and a portion existing on a region surrounding the central region of the 1 st surface flows.
9. The coating processing apparatus according to any one of claims 6 to 8, wherein the 2 nd time point is defined as a time point before interference fringes produced by the surfaces of the coating liquids supplied to the 1 st surface disappear after the 1 st time point elapses.
10. The coating treatment apparatus according to any one of claims 6 to 9, wherein the 2 nd rotation speed is a rotation speed 2 times higher than the 1 st rotation speed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021085564A JP2022178623A (en) | 2021-05-20 | 2021-05-20 | Coating method and coating system |
| JP2021-085564 | 2021-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115365085A true CN115365085A (en) | 2022-11-22 |
Family
ID=84060163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210531848.1A Pending CN115365085A (en) | 2021-05-20 | 2022-05-16 | Coating method and coating apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2022178623A (en) |
| KR (1) | KR20220157320A (en) |
| CN (1) | CN115365085A (en) |
| TW (1) | TWI819570B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1952781A (en) * | 2005-10-21 | 2007-04-25 | 东京毅力科创株式会社 | Resist coating method and resist coating apparatus |
| CN104209239A (en) * | 2013-05-31 | 2014-12-17 | 株式会社东芝 | Film formation apparatus and film formation method |
| CN105702604A (en) * | 2014-12-11 | 2016-06-22 | 东京毅力科创株式会社 | Coating method, computer storage medium and coating apparatus |
| CN107051831A (en) * | 2015-11-16 | 2017-08-18 | 东京毅力科创株式会社 | Coated film forming method and coating membrane formation device |
| JP2017161781A (en) * | 2016-03-10 | 2017-09-14 | 東京エレクトロン株式会社 | Substrate treatment method, substrate treatment device and recording medium |
| CN109127299A (en) * | 2017-06-27 | 2019-01-04 | 东京毅力科创株式会社 | Coating process method, coating process device and storage medium |
| CN110537245A (en) * | 2017-08-30 | 2019-12-03 | 株式会社斯库林集团 | Substrate processing device and Method of processing a substrate |
| CN111580355A (en) * | 2019-02-15 | 2020-08-25 | 株式会社斯库林集团 | Liquid treatment apparatus and liquid treatment method |
-
2021
- 2021-05-20 JP JP2021085564A patent/JP2022178623A/en active Pending
-
2022
- 2022-04-14 TW TW111114272A patent/TWI819570B/en active
- 2022-05-16 CN CN202210531848.1A patent/CN115365085A/en active Pending
- 2022-05-19 KR KR1020220061444A patent/KR20220157320A/en not_active Application Discontinuation
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1952781A (en) * | 2005-10-21 | 2007-04-25 | 东京毅力科创株式会社 | Resist coating method and resist coating apparatus |
| CN104209239A (en) * | 2013-05-31 | 2014-12-17 | 株式会社东芝 | Film formation apparatus and film formation method |
| CN105702604A (en) * | 2014-12-11 | 2016-06-22 | 东京毅力科创株式会社 | Coating method, computer storage medium and coating apparatus |
| CN107051831A (en) * | 2015-11-16 | 2017-08-18 | 东京毅力科创株式会社 | Coated film forming method and coating membrane formation device |
| JP2017161781A (en) * | 2016-03-10 | 2017-09-14 | 東京エレクトロン株式会社 | Substrate treatment method, substrate treatment device and recording medium |
| CN109127299A (en) * | 2017-06-27 | 2019-01-04 | 东京毅力科创株式会社 | Coating process method, coating process device and storage medium |
| CN110537245A (en) * | 2017-08-30 | 2019-12-03 | 株式会社斯库林集团 | Substrate processing device and Method of processing a substrate |
| CN111580355A (en) * | 2019-02-15 | 2020-08-25 | 株式会社斯库林集团 | Liquid treatment apparatus and liquid treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202247910A (en) | 2022-12-16 |
| KR20220157320A (en) | 2022-11-29 |
| TWI819570B (en) | 2023-10-21 |
| JP2022178623A (en) | 2022-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4947711B2 (en) | Development processing method, development processing program, and computer-readable recording medium recording the program | |
| US11806743B2 (en) | Spin dispenser module substrate surface protection system | |
| TW201133550A (en) | Developing device, developing method and storage medium | |
| KR20120010121A (en) | Coating processing method, storage medium for computer and coating processing apparatus | |
| KR102296706B1 (en) | Substrate processing apparatus and substrate processing method | |
| JP3315608B2 (en) | Coating liquid application method | |
| US10684548B2 (en) | Developing method | |
| US10766054B2 (en) | Substrate processing method and substrate processing apparatus | |
| KR102015702B1 (en) | Substrate processing method and substrate processing apparatus | |
| CN115365085A (en) | Coating method and coating apparatus | |
| JP5183562B2 (en) | Coating film forming apparatus and coating film forming method | |
| JPH10151406A (en) | Method for applying application liquid | |
| JP7136543B2 (en) | Substrate processing method and substrate processing apparatus | |
| JP3315609B2 (en) | Coating liquid application method | |
| TW202245915A (en) | Coating method and coating device | |
| JP6418531B2 (en) | RESIST DEVELOPING DEVICE, RESIST DEVELOPING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD | |
| JP3361656B2 (en) | Coating liquid application method | |
| JP4102682B2 (en) | Application method | |
| JPH10144589A (en) | Developing treatment method of semiconductor device | |
| JPH10156273A (en) | Coating liquid-applying method | |
| JP3271063B2 (en) | Method and apparatus for forming coating film | |
| JP2580082B2 (en) | Substrate rotation processing equipment | |
| JPH0963946A (en) | Substrate rotary type developing device | |
| JPH08321464A (en) | Method of developing | |
| KR20070037789A (en) | Apparatus for developing a photo-resist film coated on a substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |