JPS581144A - Method for coating photoresist - Google Patents

Abstract

PURPOSE:To coat a uniform photoresist film used for producing a semiconductor device or a photomask, by spirally dropping a resist liquid from the center of rotation on a substrate. CONSTITUTION:A pipe 16 for supplying a photoresist liquid 20 is moved at a prescribed speed toward the periphery of a substrate 14 with a pipe driving member while the substrate 14 is rotated at a proper low speed and the liquid 20 is dropped at a proper feed rate out of the nozzle 16a of the pipe 16 to spirally drop it onto the surface of the substrate. A number of winding of the liquid 20 spiral may be properly changed at that time in accordance with the surface area of the substrate 14 to be used, and such a method of dropping permits no bubble to be mixed in the liquid 20 dropped onto the substrate 14, and bubbles, if any, to be easily removed. Then, rotation of the substrate 14 is continued, permitting the spiral liquid 20 to flow and enlarge over the substrate surface 14, and a proper uniform thickness to be obtained.

Description

【発明の詳細な説明】 本発明は、各種基板上にフォトレジストを塗布する方法
の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in methods for applying photoresists onto various substrates.

半導体装置の製造あるいは半導体装置の製造に用いられ
るフォトマスクの製造等には均一なフォトレジスト膜が
必要とされ、かかるフォトレジスト膜を得る方法として
は、従来より浸漬法、スプレー法、及びスピンナー法等
がち抄、中でもスピンナー法、即ち回転式塗布方法が一
般的に広く用いられている。この回転式塗布方法は、第
１図に示す如く、モータ等による回転駆動機構１に連結
したＶギフト２に直結せる回転円盤８上の例えば半導体
ウェハ４の中心にフォトレジスト液６を適量滴下し、該
ウェハ４を前記回転駆動機構１により適当な回転速度で
回転し、前記ウェハ４上のフォトレジスト液６を該ウェ
ハ表面の全面にわたって広がらせ、余剰のフォトレジス
ト液６を遠心力によってとばして前記ウェハ表面上に均
一な厚さのフォトレジスト６の薄膜を形成する方法であ
る。A uniform photoresist film is required for the manufacture of semiconductor devices or the manufacture of photomasks used in the manufacture of semiconductor devices, and conventional methods for obtaining such photoresist films include dipping, spraying, and spinner methods. In general, the spinner method, ie, the rotary coating method, is widely used. As shown in FIG. 1, this rotary coating method involves dropping an appropriate amount of photoresist liquid 6 onto the center of, for example, a semiconductor wafer 4 on a rotating disk 8 that is directly connected to a V-gift 2 that is connected to a rotational drive mechanism 1 such as a motor. , the wafer 4 is rotated by the rotation drive mechanism 1 at an appropriate rotational speed, the photoresist liquid 6 on the wafer 4 is spread over the entire surface of the wafer, and the excess photoresist liquid 6 is blown off by centrifugal force. This method forms a thin film of photoresist 6 with a uniform thickness on the wafer surface.

ところで上記回転式塗布方法によってウェハ表面にフォ
トレジスト液を塗布するに際しては、上述したように、
塗布すべきウェハ４上の中心部に実質的な塗布量より４
余分目の量のフォトレジスト液６を局部的に重複して滴
下しているので、滴下されたフォトレジスト液５中に気
泡が生じ易く、かかる気泡の混じったフオ）１／シスト
液６が回転動作によってウェハ上に広がり塗布されると
、前記゛完泡に起因してフォトレジスト膜の厚さむらが
生じるといった不都合があや、均一な厚さのフオトレジ
スト膜を得ることを困難にしていた。By the way, when applying the photoresist liquid to the wafer surface by the above-mentioned rotary coating method, as mentioned above,
4 from the actual coating amount to the center of the wafer 4 to be coated.
Since an extra amount of the photoresist liquid 6 is locally and overlappingly dropped, bubbles are likely to be generated in the dropped photoresist liquid 5, and the follicle 1/cyst liquid 6 mixed with such bubbles is rotated. When the photoresist film is spread and coated on the wafer during operation, the photoresist film becomes uneven in thickness due to the above-mentioned "complete bubbles", which makes it difficult to obtain a photoresist film with a uniform thickness.

本発明の目的は、上記した従来法による不都合を除去す
るために％塗布すべき基板上にフォトレジスト液を滴下
させる際の滴下方法を改良し、均一なフォトレジスト族
を塗着し得るフォトレジストの塗布方法を提供すること
にある。即ち本発明は、基板上に７オトレレスト液を滴
下する際に、該レジスト液を基板上の回転中心部よシ屑
縁部に簿 向かつて渦巻状に滴下することを物像とするものである
。An object of the present invention is to improve the method of dropping a photoresist solution onto a substrate to be coated in order to eliminate the disadvantages of the conventional methods described above, and to provide a photoresist that can coat a uniform photoresist layer. The object of the present invention is to provide a method for applying the same. That is, the object of the present invention is to drop the resist solution from the center of rotation on the substrate to the edge of the scrap in a spiral pattern when dropping the resist solution onto the substrate. .

以下図面を用いて本発明に係る塗布方法の実施例につい
て詳細に説明する。Embodiments of the coating method according to the present invention will be described in detail below with reference to the drawings.

壜ず第８図に示すように回転駆動機構１１に連続された
Ｖヤフト１８に直結せる回転円盤１８上に、フォトレジ
スト液を塗布すべき基板１４を従Ｉを有する案内アーム
１フと、該案内アーム１７「をそなえたレジスト液供給
機構１６を配置する。As shown in FIG. 8, a substrate 14 to be coated with a photoresist solution is placed on a rotating disk 18 directly connected to a V shaft 18 connected to a rotational drive mechanism 11, and a guide arm 1 having a guide arm 1 and A resist liquid supply mechanism 16 equipped with a guide arm 17 is arranged.

この状態で前記基板１４を適当な低回転速度で回転する
と共に置所前記基板１４上の中心に配設されたしＶスト
液供給管１６のノズ／ｌ／１６ａよりフォトレジスト液
ｇｏを適量に滴下しながら該供給管１６を前記駆動部１
９によって基板１４周縁部に向かって所定速度で移動さ
せる。かくするととＫより、第８図の上面図及び第８図
の■−璽′切断線に沿った第４図の新面図に示されるよ
うに、前記基板１４表面に渦巻状にフォトレジスト液２
０を滴下する。との時のフォトレジスＦ液２００滴下渦
巻数は、用いられる基板１４の表面積の大きさに応じて
適当に変化させればよく、かかる滴下方法により、基板
１４上に滴下されたフォトレジスト液ｇｏ中に気泡の混
入することがなくなる。またたとえ前記により滴下され
たフオＦしＶスト液８０中に気泡が混入することがあっ
ても容易に脱泡される。In this state, the substrate 14 is rotated at an appropriate low rotational speed, and an appropriate amount of photoresist liquid go is applied from the nozzle/l/16a of the photoresist liquid supply pipe 16 located at the center of the substrate 14. While dropping, the supply pipe 16 is connected to the drive unit 1.
9 to move the substrate 14 toward the peripheral edge at a predetermined speed. Thus, from K, the photoresist liquid is spirally spread on the surface of the substrate 14, as shown in the top view of FIG. 8 and the new view of FIG. 2
Drop 0. The number of drops of the photoresist liquid F 200 in this case may be appropriately changed depending on the size of the surface area of the substrate 14 to be used. There will be no air bubbles mixed in. Furthermore, even if air bubbles are mixed into the spray liquid 80 dropped as described above, they can be easily defoamed.

しかる後、引続いて前記基板１４を回転駆動機構１１に
よって回転させれば、前記渦巻状のフォトレジスト液Ｂ
Ｏは、遠心力によって基板１４面上に流動拡大されて前
記基板１４表面上に適当４厚さに塗布される。この時、
前記フォトレジスト液８０中に気泡の混入がないので、
フォトレジスト液２０の塗布厚のむらがなくなり、均一
な厚さに塗布される。After that, if the substrate 14 is subsequently rotated by the rotation drive mechanism 11, the spiral photoresist liquid B
O is fluidized and expanded on the surface of the substrate 14 by centrifugal force, and is coated on the surface of the substrate 14 to an appropriate thickness. At this time,
Since there are no air bubbles mixed into the photoresist liquid 80,
There is no unevenness in the coating thickness of the photoresist liquid 20, and the photoresist liquid 20 is coated to a uniform thickness.

以上の説明から明らかなように本発明によるフォトレジ
ストの塗布方法によれば、半導体基板あるいはフオＦマ
スク用基板等１ｔＪ−にフォトレＶスを膜を塗着するこ
とができる利点を有し、塗布工程の歩留り、信頼性が向
上する。を九本実施例で説明したレジスト液の滴下方法
によれば従来のように金分目に滴下する必要がなく、レ
ジストの消費量を大幅に低減することができる等、実用
上すぐれた効果を有するものであシ、半導体基板上に例
えば拡散コーディング剤あるいは耐熱ポリマ等を塗布す
る場金等に適用して極めて有利である。As is clear from the above description, the photoresist coating method according to the present invention has the advantage that a photoresist film can be coated on a semiconductor substrate or a photo-F mask substrate, etc. Process yield and reliability improve. According to the method of dropping the resist solution explained in this embodiment, there is no need to drop the resist solution every minute as in the conventional method, and the amount of resist consumed can be significantly reduced, which has excellent practical effects. It is extremely advantageous to apply this method to, for example, coating a diffusion coating agent or a heat-resistant polymer on a semiconductor substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の回転塗布方法を説明する図、第□８図は
本発明に係るフォトレジストの塗布方法の一実施例に用
いる装置の要部断面図、第８図及び第４図は本発明に係
るフォトレジストの塗布方法によって基板上にフォトレ
ジスト液を渦巻状に滴下された状態を示す上面図及びそ
の新面図であ私図において、１１は回転駆動機構、１ｇ
はＶヤフト、１８は回転円盤、１４は基板、１６はレジ
スト液供給機構、１６はレジスト液供給管、１６ａは供
給管のノズル、１７は案内アーム、１８は案内穴、１９
は駆動部、Ｂｏは渦巻状に滴下され九フォトレジスト液
を示す。 第１図 第３図 ２７３Fig. 1 is a diagram explaining a conventional spin coating method, Fig. □8 is a sectional view of a main part of an apparatus used in an embodiment of the photoresist coating method according to the present invention, and Figs. A top view showing a state in which a photoresist liquid is dropped in a spiral shape onto a substrate by the photoresist coating method according to the invention and a new view thereof. In the figure, 11 is a rotational drive mechanism;
18 is a rotating disk, 14 is a substrate, 16 is a resist liquid supply mechanism, 16 is a resist liquid supply pipe, 16a is a nozzle of the supply pipe, 17 is a guide arm, 18 is a guide hole, 19
is a driving part, and Bo is a photoresist solution dropped in a spiral shape. Figure 1 Figure 3 273

Claims (1)

【特許請求の範囲】[Claims] 回転軸を有する円盤上にレジストを塗布すべき基板を載
置し、前記基板上にフォトレジスト液を滴下して回転塗
布する方法において、前記基板上にフォトレジスト液を
滴下する際に、該ＶジスＦ液を基板上の回転中心部より
周縁部に向かって渦巻状に滴下することを持重とするフ
ォトレジストの塗布方法。In a method in which a substrate to be coated with a resist is placed on a disk having a rotating shaft and a photoresist solution is dropped onto the substrate and coated by rotation, when dropping the photoresist solution onto the substrate, the V A photoresist coating method that involves dropping a diis-F solution onto a substrate in a spiral manner from the center of rotation toward the periphery.