JP2022178623A - Coating method and coating system - Google Patents

Coating method and coating system Download PDF

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JP2022178623A
JP2022178623A JP2021085564A JP2021085564A JP2022178623A JP 2022178623 A JP2022178623 A JP 2022178623A JP 2021085564 A JP2021085564 A JP 2021085564A JP 2021085564 A JP2021085564 A JP 2021085564A JP 2022178623 A JP2022178623 A JP 2022178623A
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substrate
coating
time
liquid
rotation speed
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JP2022178623A5 (en
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雄介 熊田
Yusuke Kumata
飛 徐
Fei Xu
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Priority to TW111114272A priority patent/TWI819570B/en
Priority to CN202210531848.1A priority patent/CN115365085B/en
Priority to KR1020220061444A priority patent/KR20220157320A/en
Publication of JP2022178623A publication Critical patent/JP2022178623A/en
Publication of JP2022178623A5 publication Critical patent/JP2022178623A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/0208—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work for applying liquid or other fluent material to separate articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Coating Apparatus (AREA)

Abstract

To provide a coating method and a coating system capable of preventing substrate processing failure and/or substrate contamination caused by unnecessary coating liquid remaining on the substrate.SOLUTION: A substrate W has a top surface S1 and a bottom surface, and an annular projection is formed on the top surface S1. The substrate W is held horizontally. A coating liquid is supplied to the top surface S1 of the substrate W. By rotating the substrate W on the vertical axis during or after supplying the coating liquid, the coating liquid is spread over the entire top surface S1. After that, the substrate W is dried by rotating the substrate W on the vertical axis. When drying the substrate, the substrate W is rotated at the first rotation speed s5 from the first time point t8 to the second time point t9 after the first time point t8. In addition, the substrate W is rotated at the second rotation speed s6 higher than the first rotation speed s5 from the second time t9 to the third time t10 after the second time t9.SELECTED DRAWING: Figure 6

Description

本発明は、基板に塗布膜を形成する塗布処理方法および塗布処理装置に関する。 The present invention relates to a coating processing method and a coating processing apparatus for forming a coating film on a substrate.

半導体基板、液晶表示装置もしくは有機ＥＬ（Electro Luminescence）表示装置等のＦＰＤ（Flat Panel Display）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板または太陽電池用基板等の基板に種々の処理を行うために、基板処理装置が用いられる。 Semiconductor substrate, substrate for FPD (Flat Panel Display) such as liquid crystal display device or organic EL (Electro Luminescence) display device, optical disk substrate, magnetic disk substrate, magneto-optical disk substrate, photomask substrate, ceramic substrate or solar A substrate processing apparatus is used to perform various types of processing on substrates such as battery substrates.

基板処理装置の一例として、基板の上面にレジスト膜または反射防止膜等の塗布膜を形成する塗布処理装置がある。塗布処理装置においては、例えば一枚の基板がスピンチャックにより水平姿勢で保持される。また、スピンチャックにより保持された基板が回転する。回転する基板の上面に対して、形成されるべき塗布膜の種類に応じた塗布液が供給される。基板上に供給された塗布液は、遠心力により基板の上面全体に広がる。基板上の塗布液が乾燥することにより塗布膜が形成される。 2. Description of the Related Art As an example of a substrate processing apparatus, there is a coating processing apparatus that forms a coating film such as a resist film or an antireflection film on the upper surface of a substrate. 2. Description of the Related Art In a coating processing apparatus, for example, one substrate is held in a horizontal posture by a spin chuck. Also, the substrate held by the spin chuck rotates. A coating liquid corresponding to the type of coating film to be formed is supplied to the upper surface of the rotating substrate. The coating liquid supplied onto the substrate spreads over the entire upper surface of the substrate due to centrifugal force. A coating film is formed by drying the coating liquid on the substrate.

塗布処理に要するコストを低減するために、一枚の基板当たりに用いられる塗布液の量を低減することが望まれる。また、一枚の基板当たりに用いられる塗布液の量が少ない場合でも、基板の一面には均一に塗布膜を形成することが望まれる。これらの点を考慮して、例えば特許文献１に記載されたレジスト塗布方法では、基板へのレジスト液の供給が開始された後、基板の回転速度が時間の経過とともに複数のレベルに変更される。基板上にレジスト液が塗り広げられた後、レジスト液を乾燥させるために、所定期間一定の回転速度で基板が回転する。 In order to reduce the cost required for the coating process, it is desirable to reduce the amount of coating liquid used per substrate. Further, even when the amount of the coating liquid used for one substrate is small, it is desired to form a coating film uniformly on one surface of the substrate. In consideration of these points, for example, in the resist coating method described in Patent Document 1, after the supply of the resist solution to the substrate is started, the rotational speed of the substrate is changed to a plurality of levels over time. . After the resist liquid is spread over the substrate, the substrate is rotated at a constant rotational speed for a predetermined period in order to dry the resist liquid.

特開２０１０－２１２６５８号公報JP 2010-212658 A 特開２０１２－１４６８８９号公報JP 2012-146889 A

近年、半導体デバイスの小型化および軽量化を実現するために、基板の薄型化が進められている。著しく薄型化された基板の取り扱いは難しい。これに対して、略円形状を有する基板の一面に、当該基板の外周端部に沿う円環状の凸部を有する基板が知られている（例えば、特許文献２参照）。この基板は、円環状の凸部が補強部として機能することにより、取り扱い性が向上している。 2. Description of the Related Art In recent years, in order to reduce the size and weight of semiconductor devices, substrates have been made thinner. It is difficult to handle a significantly thinned substrate. On the other hand, there is known a substrate having an annular projection along the outer peripheral edge of the substrate on one surface of the substrate having a substantially circular shape (see, for example, Patent Document 2). This substrate has improved handleability due to the annular projection functioning as a reinforcing portion.

上記の基板の一面においては、円環状の凸部の内側に段差が形成される。そのため、基板の一面上に塗布膜を形成する塗布処理において、円環状の凸部の内周端部に塗布液が残留すると、残留した塗布液に起因して基板の処理不良が発生する可能性がある。あるいは、残留した塗布液に起因してパーティクルが発生する可能性がある。 A step is formed inside the annular projection on one surface of the substrate. Therefore, in the coating process for forming a coating film on one surface of the substrate, if the coating liquid remains on the inner peripheral edge of the annular convex portion, there is a possibility that the remaining coating liquid may cause a processing failure of the substrate. There is Alternatively, particles may be generated due to the remaining coating liquid.

本発明の目的は、不要な塗布液が基板上に残留することに起因して発生する基板の処理不良および基板の汚染を防止することが可能な塗布処理方法および塗布処理装置を提供することである。 SUMMARY OF THE INVENTION It is an object of the present invention to provide a coating method and a coating apparatus capable of preventing defective processing of a substrate and contamination of the substrate caused by unnecessary coating liquid remaining on the substrate. be.

（１）第１の発明に係る塗布処理方法は、少なくとも一部が円形状の外周部を有する基板に塗布膜を形成する塗布処理方法であって、基板は、互いに逆方向を向く第１の面および第２の面を有し、第１の面には、当該第１の面に直交する方向に突出しかつ外周部に沿って延びる円環状の凸部が形成され、塗布処理方法は、第１の面が上方を向くように基板を水平姿勢で保持するステップと、第１の面に塗布液を供給し、塗布液の供給中または供給後に水平姿勢で保持された基板を鉛直軸の周りで回転させることにより当該第１の面全体に塗布液を広げるステップと、塗布液を広げるステップの後、水平姿勢で保持された基板を鉛直軸の周りで回転させることにより基板を乾燥させるステップとを含み、基板を乾燥させるステップは、第１の時点から第１の時点よりも後の第２の時点までの間、第１の回転速度で基板を回転させることと、第２の時点から第２の時点よりも後の第３の時点までの間、第１の回転速度よりも高い第２の回転速度で基板を回転させることとを含む。 (1) A coating treatment method according to a first aspect of the invention is a coating treatment method for forming a coating film on a substrate having at least a partially circular outer peripheral portion, wherein the substrates face opposite directions to each other. It has a surface and a second surface, and the first surface is formed with an annular protrusion projecting in a direction perpendicular to the first surface and extending along the outer peripheral portion. holding the substrate in a horizontal position with one surface facing upward; supplying a coating liquid to the first surface; a step of spreading the coating liquid over the entire first surface by rotating the substrate with the substrate; after the step of spreading the coating liquid, drying the substrate by rotating the substrate held in a horizontal posture around a vertical axis; and drying the substrate comprises rotating the substrate at a first rotational speed for a first time to a second time later than the first time; rotating the substrate at a second rotation speed that is greater than the first rotation speed for a period of time after the second time point to a third time point.

その塗布処理方法においては、第１の面が上方を向くように基板が水平姿勢で保持される。また、第１の面に塗布液が供給される。さらに、塗布液の供給中または供給後に基板が回転され、第１の面全体に塗布液が広げられる。第１の面全体に塗布液が広がった後、基板を乾燥させるために、第１の時点から第２の時点にかけて基板が第１の回転速度で回転する。それにより、基板の中央部分に位置しかつ流動性を有する塗布液が基板の外周部に向かって移動する。したがって、基板の第１の面における中央部分が乾燥する。 In the coating treatment method, the substrate is held in a horizontal posture so that the first surface faces upward. Also, the coating liquid is supplied to the first surface. Further, the substrate is rotated during or after supplying the coating liquid to spread the coating liquid over the entire first surface. After spreading the coating liquid over the first surface, the substrate is rotated at a first rotational speed from the first time point to the second time point to dry the substrate. As a result, the fluid coating liquid located in the central portion of the substrate moves toward the outer peripheral portion of the substrate. Therefore, the central portion of the first surface of the substrate dries.

続いて、第２の時点から第３の時点にかけて基板が第１の回転速度よりも高い第２の回転速度で回転する。この場合、基板の外周部およびその近傍で流動する塗布液に、より大きい遠心力が作用する。また、基板を取り囲む空間に、より大きな気流が発生する。それにより、第１の面上で基板の中心から外周部に向かって流動する塗布液の大部分が円環状の凸部の内側の領域から基板の外方に向かって飛散する。換言すれば、第１の面上で円環状の凸部の内縁に導かれる不要な塗布液が、基板の外方に振り切られる。 Subsequently, the substrate rotates at a second rotation speed higher than the first rotation speed from the second time point to the third time point. In this case, a larger centrifugal force acts on the coating liquid flowing in and around the outer periphery of the substrate. Also, a larger airflow is generated in the space surrounding the substrate. As a result, most of the coating liquid flowing from the center to the outer periphery of the substrate on the first surface scatters outward from the substrate from the region inside the annular protrusion. In other words, the unnecessary coating liquid guided to the inner edge of the annular convex portion on the first surface is shaken off to the outside of the substrate.

その結果、塗布処理時に不要な塗布液が基板上に残留することに起因して基板の処理不良および基板の汚染が発生することを防止することができる。 As a result, it is possible to prevent the occurrence of defective processing of the substrate and contamination of the substrate due to the unnecessary coating liquid remaining on the substrate during the coating process.

（２）塗布処理方法は、基板を乾燥させるステップの後、第１の回転速度よりも低い第３の回転速度で基板を回転させつつ、第２の面にリンス液を供給するステップをさらに含んでもよい。 (2) The coating treatment method further includes, after the step of drying the substrate, supplying a rinse liquid to the second surface while rotating the substrate at a third rotation speed lower than the first rotation speed. It's okay.

この場合、第１の回転速度で回転する基板にリンス液を供給する場合に比べて、基板から飛散するリンス液の量を低減することができる。それにより、第１の面にリンス液が付着することにより処理不良が発生することを防止することができる。 In this case, compared to the case of supplying the rinse liquid to the substrate rotating at the first rotation speed, the amount of the rinse liquid scattered from the substrate can be reduced. As a result, it is possible to prevent the occurrence of processing defects due to the rinse liquid adhering to the first surface.

（３）第２の時点は、第１の面上に広げられた塗布液のうち第１の面の中央領域に存在する部分が乾燥しかつ第１の面の中央領域を取り囲む領域上に存在する部分が流動する状態にある期間内となるように定められてもよい。 (3) At the second time point, the portion of the coating liquid spread on the first surface, which is present in the central region of the first surface, is dry and present in the region surrounding the central region of the first surface. It may be determined to be within a period in which the portion to be held is in a state of fluidity.

この場合、基板を乾燥させる際に、第２の時点から第３の時点にかけて第１の面の中央領域を取り囲む領域に存在する塗布液が円滑に振り切られる。 In this case, when the substrate is dried, the coating liquid present in the area surrounding the central area of the first surface is smoothly shaken off from the second time point to the third time point.

（４）第２の時点は、第１の時点経過後第１の面に供給された塗布液の表面に発生する干渉縞が消滅するよりも前の時点に定められてもよい。 (4) The second point in time may be set at a point in time before the disappearance of interference fringes generated on the surface of the coating liquid supplied to the first surface after the first point in time.

この場合、干渉縞が消滅するよりも前に第２の回転速度による基板の回転が開始される。それにより、基板の外周部およびその近傍に存在しかつ流動性を有する塗布液が円滑に振り切られる。 In this case, the substrate starts rotating at the second rotation speed before the interference fringes disappear. As a result, the fluid coating liquid present on the outer periphery of the substrate and its vicinity is smoothly shaken off.

（５）第２の回転速度は、第１の回転速度の２倍の回転速度よりも高くてもよい。 (5) The second rotational speed may be higher than twice the first rotational speed.

この場合、第１の面上で円環状の凸部の内縁に導かれる不要な塗布液に、より大きな遠心力が作用する。また、基板を取り囲む空間にさらに大きな気流が発生する。それにより、円環状の凸部の内側の不要な塗布液が、より円滑に基板の外方に振り切られる。 In this case, a larger centrifugal force acts on the unnecessary coating liquid guided to the inner edge of the annular protrusion on the first surface. In addition, a larger airflow is generated in the space surrounding the substrate. As a result, the unnecessary coating liquid inside the annular convex portion is more smoothly shaken off to the outside of the substrate.

（６）第２の発明に係る塗布処理装置は、少なくとも一部が円形状の外周部を有する基板に塗布膜を形成する塗布処理装置であって、基板は、互いに逆方向を向く第１の面および第２の面を有し、第１の面には、当該第１の面に直交する方向に突出しかつ外周部に沿って延びる円環状の凸部が形成され、塗布処理装置は、第１の面が上方を向くように基板を水平姿勢で保持しつつ鉛直軸の周りで回転させる回転保持部と、第１の面に塗布液を供給する塗布液供給部と、第１の面に塗布液が供給されるように塗布液供給部を制御し、塗布液の供給中または供給後に水平姿勢で保持された基板が鉛直軸の周りで回転することにより当該第１の面全体に塗布液が広がるように回転保持部を制御する制御部とを備え、制御部は、第１の面全体に塗布液が広げられた後、第１の時点から第１の時点よりも後の第２の時点までの間、水平姿勢で保持された基板が第１の回転速度で回転し、第２の時点から第２の時点よりも後の第３の時点までの間、水平姿勢で保持された基板が第１の回転速度よりも高い第２の回転速度で回転することにより基板が乾燥するように回転保持部をさらに制御する。 (6) A coating processing apparatus according to a second aspect of the present invention is a coating processing apparatus for forming a coating film on a substrate having an at least partially circular outer peripheral portion, wherein the substrates face opposite directions to each other. It has a surface and a second surface, and the first surface is formed with an annular projection projecting in a direction orthogonal to the first surface and extending along the outer peripheral portion. a rotation holding unit that holds the substrate in a horizontal position and rotates it around the vertical axis so that one surface faces upward; a coating liquid supply unit that supplies the coating liquid to the first surface; The coating liquid supply unit is controlled so as to supply the coating liquid, and the substrate held in a horizontal posture rotates around the vertical axis during or after the supply of the coating liquid, thereby spreading the coating liquid over the entire first surface. and a control unit for controlling the rotation holding unit so that the coating liquid spreads over the entire first surface, and the control unit controls the second time after the first time from the first time after the coating liquid is spread over the entire first surface The substrate held in the horizontal posture rotates at a first rotation speed until the time point, and the substrate held in the horizontal posture is rotated from the second time point to a third time point after the second time point. is further controlled to dry the substrate by rotating at a second rotational speed that is higher than the first rotational speed.

その塗布処理装置においては、第１の面が上方を向くように基板が水平姿勢で保持される。また、第１の面に塗布液が供給される。さらに、塗布液の供給中または供給後に基板が回転され、第１の面全体に塗布液が広げられる。第１の面全体に塗布液が広がった後、基板を乾燥させるために、第１の時点から第２の時点にかけて基板が第１の回転速度で回転する。それにより、基板の中央部分に位置しかつ流動性を有する塗布液が基板の外周部に向かって移動する。したがって、基板の第１の面における中央部分が乾燥する。 In the coating treatment apparatus, the substrate is held in a horizontal posture so that the first surface faces upward. Also, the coating liquid is supplied to the first surface. Further, the substrate is rotated during or after supplying the coating liquid to spread the coating liquid over the entire first surface. After spreading the coating liquid over the first surface, the substrate is rotated at a first rotational speed from the first time point to the second time point to dry the substrate. As a result, the fluid coating liquid located in the central portion of the substrate moves toward the outer peripheral portion of the substrate. Therefore, the central portion of the first surface of the substrate dries.

続いて、第２の時点から第３の時点にかけて基板が第１の回転速度よりも高い第２の回転速度で回転する。この場合、基板の外周部およびその近傍で流動する塗布液に、より大きい遠心力が作用する。また、基板を取り囲む空間に、より大きな気流が発生する。それにより、第１の面上で基板の中心から外周部に向かって流動する塗布液の大部分が円環状の凸部の内側の領域から基板の外方に向かって飛散する。換言すれば、第１の面上で円環状の凸部の内縁に導かれる不要な塗布液が、基板の外方に振り切られる。 Subsequently, the substrate rotates at a second rotation speed higher than the first rotation speed from the second time point to the third time point. In this case, a larger centrifugal force acts on the coating liquid flowing in and around the outer periphery of the substrate. Also, a larger airflow is generated in the space surrounding the substrate. As a result, most of the coating liquid flowing from the center to the outer periphery of the substrate on the first surface scatters outward from the substrate from the region inside the annular protrusion. In other words, the unnecessary coating liquid guided to the inner edge of the annular convex portion on the first surface is shaken off to the outside of the substrate.

その結果、塗布処理時に不要な塗布液が基板上に残留することに起因して基板の処理不良および基板の汚染が発生することを防止することができる。 As a result, it is possible to prevent the occurrence of defective processing of the substrate and contamination of the substrate due to the unnecessary coating liquid remaining on the substrate during the coating process.

（７）塗布処理装置は、第２の面にリンス液を供給するリンス液供給部をさらに備え、制御部は、基板が第２の回転速度で回転することにより乾燥した後、第１の回転速度よりも低い第３の回転速度で基板が回転するように回転保持部をさらに制御するとともに、第３の回転速度で回転する基板の第２の面にリンス液が供給されるようにリンス液供給部をさらに制御してもよい。 (7) The coating processing apparatus further includes a rinse liquid supply unit that supplies a rinse liquid to the second surface, and the controller controls the substrate to rotate at the second rotation speed to dry the substrate, and then rotate the substrate at the first rotation speed. The spin holder is further controlled to rotate the substrate at a third rotation speed lower than the speed, and the rinse liquid is supplied to the second surface of the substrate rotating at the third rotation speed. The supply may be further controlled.

この場合、第１の回転速度で回転する基板にリンス液を供給する場合に比べて、基板から飛散するリンス液の量を低減することができる。それにより、第１の面にリンス液が付着することにより発生する処理不良を防止することができる。 In this case, compared to the case of supplying the rinse liquid to the substrate rotating at the first rotation speed, the amount of the rinse liquid scattered from the substrate can be reduced. As a result, it is possible to prevent processing defects caused by the rinsing liquid adhering to the first surface.

（８）第２の時点は、第１の面上に広げられた塗布液のうち第１の面の中央領域に存在する部分が乾燥しかつ第１の面の中央領域を取り囲む領域上に存在する部分が流動する状態にある期間内となるように定められてもよい。 (8) At the second time point, the portion of the coating liquid spread on the first surface that is present in the central region of the first surface is dry and is present on the region surrounding the central region of the first surface. It may be determined to be within a period in which the portion to be held is in a state of fluidity.

この場合、基板を乾燥させる際に、第２の時点から第３の時点にかけて第１の面の中央領域を取り囲む領域に存在する塗布液が円滑に振り切られる。 In this case, when the substrate is dried, the coating liquid present in the area surrounding the central area of the first surface is smoothly shaken off from the second time point to the third time point.

（９）第２の時点は、第１の時点経過後第１の面に供給された塗布液の表面に発生する干渉縞が消滅するよりも前の時点に定められてもよい。 (9) The second point in time may be set at a point in time before the disappearance of the interference fringes generated on the surface of the coating liquid supplied to the first surface after the first point in time.

この場合、干渉縞が消滅するよりも前に第２の回転速度による基板の回転が開始される。それにより、基板の外周部およびその近傍に存在しかつ流動性を有する塗布液が円滑に振り切られる。 In this case, the substrate starts rotating at the second rotation speed before the interference fringes disappear. As a result, the fluid coating liquid present on the outer periphery of the substrate and its vicinity is smoothly shaken off.

（１０）第２の回転速度は、第１の回転速度の２倍の回転速度よりも高くてもよい。 (10) The second rotational speed may be higher than twice the first rotational speed.

この場合、第１の面上で円環状の凸部の内縁に導かれる不要な塗布液に、より大きな遠心力が作用する。また、基板を取り囲む空間にさらに大きな気流が発生する。それにより、円環状の凸部の内側の不要な塗布液が、より円滑に基板の外方に振り切られる。 In this case, a larger centrifugal force acts on the unnecessary coating liquid guided to the inner edge of the annular protrusion on the first surface. In addition, a larger airflow is generated in the space surrounding the substrate. As a result, the unnecessary coating liquid inside the annular convex portion is more smoothly shaken off to the outside of the substrate.

本発明によれば、不要な塗布液が基板上に残留することに起因して発生する基板の処理不良および基板の汚染を防止することが可能になる。 According to the present invention, it is possible to prevent defective processing of the substrate and contamination of the substrate caused by unnecessary coating liquid remaining on the substrate.

本発明の一実施の形態に係る塗布処理装置の模式的断面図である。1 is a schematic cross-sectional view of a coating treatment apparatus according to an embodiment of the invention; FIG. 図１の塗布処理装置の模式的平面図である。FIG. 2 is a schematic plan view of the coating treatment apparatus of FIG. 1; 図１の塗布処理装置の処理対象となる基板の平面図である。2 is a plan view of a substrate to be processed by the coating processing apparatus of FIG. 1; FIG. 図３の基板のＡ－Ａ線断面図である。FIG. 4 is a cross-sectional view of the substrate of FIG. 3 taken along line AA; 液膜乾燥工程において基板Ｗのリム部と内側領域との境界の段差にレジスト液が滞留する例を示す図である。FIG. 10 is a diagram showing an example in which the resist liquid stays on the step at the boundary between the rim portion and the inner region of the substrate W in the liquid film drying process; 本発明の一実施の形態に係る塗布処理中の基板の回転速度の制御例を示す図である。FIG. 5 is a diagram showing an example of controlling the rotation speed of a substrate during coating processing according to one embodiment of the present invention; 図６の液膜乾燥工程において基板のリム部およびその周辺部に存在するレジスト液またはレジスト膜の状態の変化を示す図である。7A and 7B are diagrams showing changes in the state of a resist solution or a resist film existing on the rim portion of the substrate and its peripheral portion in the liquid film drying process of FIG. 6; 実施例基板および比較例基板のレジスト膜の膜厚分布の一部を示す図である。FIG. 3 is a diagram showing part of the film thickness distribution of resist films of an example substrate and a comparative example substrate;

以下、本発明の一実施の形態に係る塗布処理方法および塗布処理装置について図面を参照しつつ説明する。以下の説明において、基板とは、液晶表示装置または有機ＥＬ（Electro Luminescence）表示装置等に用いられるＦＰＤ（Flat Panel Display）用基板、半導体基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板または太陽電池用基板等をいう。また、本実施の形態では、基板の上面が回路形成面（表面）であり、基板の下面が回路形成面と反対側の面（裏面）である。さらに、本実施の形態では、基板は、平面視でノッチの形成部分を除いて円形状を有する。基板の形状の詳細は後述する。 Hereinafter, a coating treatment method and a coating treatment apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate means an FPD (Flat Panel Display) substrate used in a liquid crystal display device or an organic EL (Electro Luminescence) display device or the like, a semiconductor substrate, an optical disk substrate, a magnetic disk substrate, or a magneto-optical disk substrate. A substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, or the like. Further, in the present embodiment, the upper surface of the substrate is the circuit forming surface (front surface), and the lower surface of the substrate is the surface opposite to the circuit forming surface (back surface). Furthermore, in the present embodiment, the substrate has a circular shape in plan view except for the notch formation portion. The details of the shape of the substrate will be described later.

［１］塗布処理装置の全体構成
図１は本発明の一実施の形態に係る塗布処理装置の模式的断面図であり、図２は図１の塗布処理装置１の模式的平面図である。図２では、図１の塗布処理装置１の複数の構成要素のうち一部の構成要素の図示が省略されている。また、図１の基板Ｗが一点鎖線で示される。 [1] Overall Configuration of Coating Treatment Apparatus FIG. 1 is a schematic cross-sectional view of a coating treatment apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic plan view of the coating treatment apparatus 1 of FIG. In FIG. 2, illustration of some of the components of the coating treatment apparatus 1 of FIG. 1 is omitted. Also, the substrate W in FIG. 1 is indicated by a dashed line.

図１に示すように、本実施の形態に係る塗布処理装置１は、主として回転保持装置１０、液供給装置２０および制御部３０を備える。回転保持装置１０は、基板Ｗの下面中央部を吸着保持しつつ回転させることが可能に構成される。 As shown in FIG. 1, the coating treatment apparatus 1 according to this embodiment mainly includes a rotation holding device 10, a liquid supply device 20, and a control section 30. As shown in FIG. The rotation holding device 10 is configured to be able to rotate the substrate W while sucking and holding the central portion of the lower surface of the substrate W. As shown in FIG.

液供給装置２０は、レジストノズル２１、塗布液供給系２２、溶剤ノズル２３および溶剤供給系２４を含む。塗布液供給系２２は、レジストノズル２１にレジスト液を供給する。レジストノズル２１は、供給されたレジスト液を回転保持装置１０により吸着保持されて回転する基板Ｗの上面に吐出する。溶剤供給系２４は、溶剤ノズル２３に溶剤を供給する。溶剤ノズル２３は、供給された溶剤を回転保持装置１０により吸着保持される基板Ｗの上面に吐出する。ここで、溶剤ノズル２３に供給される溶剤としては、後述する塗布処理により基板Ｗ上に形成されるレジスト膜を溶解可能な溶剤が用いられる。制御部３０は、ＣＰＵ（中央演算処理装置）およびメモリ、またはマイクロコンピュータを含み、回転保持装置１０および液供給装置２０の動作を制御する。 The liquid supply device 20 includes a resist nozzle 21 , a coating liquid supply system 22 , a solvent nozzle 23 and a solvent supply system 24 . The coating liquid supply system 22 supplies the resist liquid to the resist nozzle 21 . The resist nozzle 21 discharges the supplied resist liquid onto the upper surface of the substrate W which is held by suction by the spin holder 10 and rotated. The solvent supply system 24 supplies solvent to the solvent nozzle 23 . The solvent nozzle 23 discharges the supplied solvent onto the upper surface of the substrate W sucked and held by the rotary holding device 10 . Here, as the solvent supplied to the solvent nozzle 23, a solvent capable of dissolving a resist film formed on the substrate W by a coating process, which will be described later, is used. The control unit 30 includes a CPU (Central Processing Unit) and memory or a microcomputer, and controls operations of the rotation holding device 10 and the liquid supply device 20 .

回転保持装置１０の具体的な構成について説明する。回転保持装置１０は、吸着保持部１１、回転軸１２、回転駆動部１３、吸引装置１４、カップ１５、排液案内管１６、下面ノズル１７およびリンス液供給系１８を含む。 A specific configuration of the rotation holding device 10 will be described. The rotary holding device 10 includes a suction holding portion 11 , a rotary shaft 12 , a rotary driving portion 13 , a suction device 14 , a cup 15 , a drainage guide tube 16 , a bottom nozzle 17 and a rinse liquid supply system 18 .

吸着保持部１１は、基板Ｗの下面中央部を吸着保持する上面１１ｕを有し、上下方向に延びる回転軸１２の上端部に取り付けられている。吸着保持部１１の上面１１ｕには、多数の吸引孔ｈ（図２）が形成されている。回転駆動部１３は、回転軸１２をその軸心の周りで回転させる。 The adsorption holding part 11 has an upper surface 11u for adsorbing and holding the central part of the lower surface of the substrate W, and is attached to the upper end part of the rotating shaft 12 extending in the vertical direction. A large number of suction holes h ( FIG. 2 ) are formed in the upper surface 11 u of the suction holding portion 11 . The rotary drive unit 13 rotates the rotary shaft 12 around its axis.

図１に太い点線で示すように、吸着保持部１１および回転軸１２の内部には、吸気経路ｖｐが形成されている。吸気経路ｖｐは、吸引装置１４に接続されている。吸引装置１４は、例えばアスピレータ等の吸引機構を含み、吸気経路ｖｐおよび多数の吸引孔ｈを通して吸着保持部１１の上面１１ｕ上の空間の雰囲気を吸引し、塗布処理装置１の外部に排出する。 As indicated by the thick dotted line in FIG. 1 , an intake path vp is formed inside the suction holding portion 11 and the rotating shaft 12 . The intake path vp is connected to the suction device 14 . The suction device 14 includes a suction mechanism such as an aspirator, sucks the atmosphere in the space above the upper surface 11u of the suction holder 11 through the suction path vp and many suction holes h, and discharges the atmosphere to the outside of the coating processing apparatus 1 .

図２に示すように、カップ１５は、平面視で吸着保持部１１の周囲を取り囲むように設けられるとともに、図示しない昇降機構により上下方向における複数の位置に移動可能に構成される。図１に示すように、カップ１５は、底部１５ｘおよび外周壁部１５ｙを含む。底部１５ｘは、略円環形状を有する。底部１５ｘの内周端部は所定高さ分上方に向かって屈曲している。外周壁部１５ｙは、底部１５ｘの外周端部から所定高さ分上方に延び、屈曲し、さらに吸着保持部１１に向かって斜め上方に延びるように形成されている。 As shown in FIG. 2, the cup 15 is provided so as to surround the suction holding portion 11 in plan view, and is configured to be movable to a plurality of positions in the vertical direction by an elevation mechanism (not shown). As shown in FIG. 1, the cup 15 includes a bottom portion 15x and an outer peripheral wall portion 15y. The bottom portion 15x has a substantially annular shape. An inner peripheral edge of the bottom portion 15x is bent upward by a predetermined height. The outer peripheral wall portion 15 y extends upward by a predetermined height from the outer peripheral end portion of the bottom portion 15 x, bends, and further extends obliquely upward toward the suction holding portion 11 .

カップ１５の底部１５ｘには、ドレイン１５ｄが形成されている。底部１５ｘにおけるドレイン１５ｄの形成部分には、排液案内管１６が取り付けられている。排液案内管１６の下端部は図示しない排液系に接続されている。 A drain 15 d is formed in the bottom portion 15 x of the cup 15 . A drainage guide pipe 16 is attached to a portion of the bottom portion 15x where the drain 15d is formed. The lower end of the drainage guide pipe 16 is connected to a drainage system (not shown).

図２に示すように、平面視でカップ１５の外周壁部１５ｙの内周端部と吸着保持部１１の外周端部との間には、複数（本例では４つ）の下面ノズル１７が設けられている。複数の下面ノズル１７は、平面視で吸着保持部１１を取り囲むように吸着保持部１１の中心を基準として等角度間隔で配置されている。各下面ノズル１７の上端部には、上方に向く液吐出口１７ｂが設けられている。 As shown in FIG. 2, a plurality of (in this example, four) lower surface nozzles 17 are provided between the inner peripheral end portion of the outer peripheral wall portion 15y of the cup 15 and the outer peripheral end portion of the suction holding portion 11 in plan view. is provided. The plurality of lower surface nozzles 17 are arranged at equal angular intervals with respect to the center of the suction holding portion 11 so as to surround the suction holding portion 11 in plan view. At the upper end of each lower surface nozzle 17, a liquid ejection port 17b facing upward is provided.

図１に示すように、各下面ノズル１７の液吐出口１７ｂは、吸着保持部１１の外周端部近傍の位置で、吸着保持部１１により吸着保持される基板Ｗの下面に対向する。なお、塗布処理装置１は、図示しない筐体内に回転保持装置１０および液供給装置２０が収容された構成を有する。下面ノズル１７は、例えば塗布処理装置１の筐体に固定される。下面ノズル１７は、リンス液供給系１８から供給されるリンス液を、液吐出口１７ｂから基板Ｗの下面に吐出する。 As shown in FIG. 1 , the liquid ejection port 17 b of each lower surface nozzle 17 faces the lower surface of the substrate W sucked and held by the sucking and holding part 11 at a position near the outer peripheral edge of the sucking and holding part 11 . The coating processing apparatus 1 has a configuration in which the rotation holding device 10 and the liquid supply device 20 are accommodated in a housing (not shown). The lower surface nozzle 17 is fixed to the housing of the coating treatment apparatus 1, for example. The bottom surface nozzle 17 ejects the rinse liquid supplied from the rinse liquid supply system 18 onto the bottom surface of the substrate W from the liquid ejection port 17b.

上記の構成を有する塗布処理装置１について、塗布処理時の動作の概要を説明する。基板Ｗの塗布処理が開始される際には、まず吸着保持部１１により基板Ｗが水平姿勢で保持される。また、水平方向において外周壁部１５ｙの内周面が基板Ｗの外周端部に対向するように、カップ１５が上下方向に位置決めされる。この状態で、溶剤ノズル２３が図示しないノズル移動装置により基板Ｗの上方に移動する。溶剤ノズル２３から基板Ｗの上面に所定量の溶剤が吐出される。その後、溶剤ノズル２３が基板Ｗの上方の位置から基板Ｗの側方の位置に移動する。また、回転駆動部１３が動作することにより基板Ｗが回転される。それにより、基板Ｗの上面が溶剤により湿潤する。 An overview of the operation of the coating processing apparatus 1 having the above configuration during coating processing will be described. When the coating process of the substrate W is started, first, the substrate W is held in a horizontal posture by the suction holding portion 11 . Further, the cup 15 is vertically positioned such that the inner peripheral surface of the outer peripheral wall portion 15y faces the outer peripheral end portion of the substrate W in the horizontal direction. In this state, the solvent nozzle 23 is moved above the substrate W by a nozzle moving device (not shown). A predetermined amount of solvent is discharged onto the upper surface of the substrate W from the solvent nozzle 23 . After that, the solvent nozzle 23 moves from the position above the substrate W to the position on the side of the substrate W. As shown in FIG. Also, the substrate W is rotated by the operation of the rotation drive unit 13 . Thereby, the upper surface of the substrate W is wetted by the solvent.

続いて、レジストノズル２１が図示しないノズル移動装置により基板Ｗの上方に移動する。この状態で、レジストノズル２１から基板Ｗの上面に所定量のレジスト液が吐出される。それにより、回転する基板Ｗの上面にレジスト液が塗布される。回転する基板Ｗから外方に飛散するレジスト液は、カップ１５の外周壁部１５ｙの内周面により受け止められる。受け止められたレジスト液は、カップ１５の底部１５ｘに収集され、ドレイン１５ｄから排液案内管１６を通して図示しない排液系に導かれる。上記のように、基板Ｗの塗布処理のうち基板Ｗの上面全体にレジスト液を塗布する工程、すなわち基板Ｗの上面全体にレジスト液の液膜を形成する工程を液膜形成工程と呼ぶ。 Subsequently, the resist nozzle 21 is moved above the substrate W by a nozzle moving device (not shown). In this state, a predetermined amount of resist liquid is discharged onto the upper surface of the substrate W from the resist nozzle 21 . Thereby, the upper surface of the rotating substrate W is coated with the resist liquid. The resist liquid splashing outward from the rotating substrate W is received by the inner peripheral surface of the outer peripheral wall portion 15 y of the cup 15 . The received resist liquid is collected in the bottom portion 15x of the cup 15 and led from the drain 15d through the drainage guide pipe 16 to a drainage system (not shown). As described above, the process of applying the resist liquid over the entire upper surface of the substrate W, that is, the process of forming the liquid film of the resist liquid over the entire upper surface of the substrate W in the coating process of the substrate W is called the liquid film forming process.

次に、レジストノズル２１から基板Ｗへのレジスト液の吐出が停止された状態で、基板Ｗの回転が継続されることにより、基板Ｗの上面に塗布されたレジスト液のうち余分なレジスト液が振り切られる。また、基板Ｗ上に残留するレジスト液の液膜が乾燥する。それにより、基板Ｗの上面にレジスト膜が形成される。上記のように、基板Ｗの塗布処理のうち基板Ｗの上面に塗布されたレジスト液の液膜を乾燥させる工程を液膜乾燥工程と呼ぶ。 Next, the rotation of the substrate W is continued while the ejection of the resist liquid from the resist nozzles 21 onto the substrate W is stopped, so that the surplus resist liquid of the resist liquid applied to the upper surface of the substrate W is removed. shaken off. Further, the liquid film of the resist liquid remaining on the substrate W is dried. Thereby, a resist film is formed on the upper surface of the substrate W. Next, as shown in FIG. As described above, the process of drying the liquid film of the resist liquid coated on the upper surface of the substrate W in the coating process of the substrate W is called the liquid film drying process.

基板Ｗの上面にレジスト膜が形成された後、基板Ｗの下面に付着したレジスト液またはレジスト膜を除去するために、下面ノズル１７から基板Ｗの下面に向けてリンス液が吐出される。リンス液としては、上記の溶剤ノズル２３から基板Ｗの上面に供給される溶剤と同様に、レジスト膜を溶解可能な溶剤が用いられる。 After the resist film is formed on the upper surface of the substrate W, a rinse liquid is discharged from the lower surface nozzle 17 toward the lower surface of the substrate W in order to remove the resist solution or the resist film adhering to the lower surface of the substrate W. As the rinsing liquid, a solvent capable of dissolving the resist film is used in the same manner as the solvent supplied to the upper surface of the substrate W from the solvent nozzle 23 described above.

その後、下面ノズル１７から基板Ｗへのリンス液の吐出が停止される。この状態で、基板Ｗの回転が継続されることにより、基板Ｗの下面に塗布されたリンス液が乾燥する。それにより、基板Ｗの下面に付着したレジスト液またはレジストの固形物が除去される。塗布処理装置１の上記の一連の動作によりレジスト膜が形成された基板Ｗは、塗布処理装置１から搬出され、図示しない露光装置により露光処理が施される。 After that, the discharge of the rinse liquid from the lower surface nozzle 17 to the substrate W is stopped. By continuing the rotation of the substrate W in this state, the rinse liquid applied to the lower surface of the substrate W is dried. As a result, the resist liquid or resist solid matter adhering to the lower surface of the substrate W is removed. The substrate W on which the resist film has been formed by the series of operations of the coating processing apparatus 1 is unloaded from the coating processing apparatus 1 and subjected to exposure processing by an exposure apparatus (not shown).

［２］液膜乾燥工程で基板Ｗに残留するレジスト液
図３は、図１の塗布処理装置１の処理対象となる基板Ｗの平面図である。図４は、図３の基板ＷのＡ－Ａ線断面図である。本実施の形態に係る基板Ｗは、約３００ｍｍの直径を有する円形基板であり、図３および図４に示すように、上面Ｓ１および下面Ｓ２を有する。その基板Ｗの外周端部には、ノッチＮが形成されている（図３）。 [2] Resist Liquid Remaining on Substrate W in Liquid Film Drying Step FIG. 3 is a plan view of the substrate W to be processed by the coating processing apparatus 1 of FIG. FIG. 4 is a cross-sectional view of the substrate W of FIG. 3 taken along the line AA. The substrate W according to this embodiment is a circular substrate having a diameter of approximately 300 mm, and has an upper surface S1 and a lower surface S2 as shown in FIGS. A notch N is formed in the outer peripheral edge of the substrate W (FIG. 3).

基板Ｗの上面Ｓ１においては、基板Ｗの外周端部から一定幅の部分に、上方に向かって突出しかつその基板Ｗの外周端部に沿って延びる円環状の凸部が形成されている。基板Ｗにおける凸部の形成部分をリム部（Outer support ring）ＳＲと呼ぶ。その基板Ｗにおいて、リム部ＳＲの内側に位置する部分の厚み（基板の厚み）は、１００μｍ以下であり、リム部ＳＲの厚みよりも小さい。なお、リム部ＳＲの厚みは、１００μｍよりも大きく７７５μｍ以下であり、例えば０．８ｍｍに近い。 On the upper surface S1 of the substrate W, an annular protrusion projecting upward and extending along the outer peripheral edge of the substrate W is formed in a portion having a constant width from the outer peripheral edge of the substrate W. As shown in FIG. A portion of the substrate W where the convex portion is formed is called a rim portion (outer support ring) SR. In the substrate W, the thickness of the portion located inside the rim portion SR (substrate thickness) is 100 μm or less, which is smaller than the thickness of the rim portion SR. Note that the thickness of the rim portion SR is greater than 100 μm and 775 μm or less, and is close to 0.8 mm, for example.

以下の説明では、基板Ｗの上面Ｓ１のうちリム部ＲＰの内側の領域を内側領域ＩＡと呼ぶ。図４では、基板Ｗ全体の断面図のうちリム部ＳＲおよびその周辺部の拡大断面図が吹き出し内に示される。 In the following description, a region of the upper surface S1 of the substrate W inside the rim portion RP is called an inner region IA. In FIG. 4, of the cross-sectional view of the entire substrate W, an enlarged cross-sectional view of the rim portion SR and its peripheral portion is shown in a balloon.

図４の吹き出し内に示すように、本実施の形態に係る基板Ｗにおいては、リム部ＳＲと内側領域ＩＡとの境界に段差ＳＴが形成されている。このように、リム部ＳＲの内周端部に位置する段差ＳＴには、基板Ｗの塗布処理中の液膜乾燥工程でレジスト液が滞留しやすい。滞留したレジスト液が乾燥すると、上記の段差ＳＴおよびその近傍に存在するレジスト膜の厚みが局所的に大きくなる。このようなレジスト膜の厚みの不均一は、露光不良およびパーティクルの発生の要因となる。 As shown in the balloon in FIG. 4, in the substrate W according to the present embodiment, a step ST is formed at the boundary between the rim portion SR and the inner area IA. As described above, the resist liquid tends to stay in the step ST located at the inner peripheral edge of the rim portion SR during the liquid film drying step during the coating process of the substrate W. FIG. When the remaining resist liquid dries, the thickness of the resist film existing at and near the step ST is locally increased. Such non-uniformity in the thickness of the resist film causes poor exposure and generation of particles.

図５は、液膜乾燥工程において基板Ｗのリム部ＳＲと内側領域ＩＡとの境界の段差ＳＴにレジスト液が滞留する例を示す図である。図５では、上段、中段および下段に、液膜乾燥工程において基板Ｗのリム部ＳＲおよびその周辺部に存在するレジスト液Ｒ１またはレジスト膜Ｒ２の状態が時系列順に拡大断面図で示される。 FIG. 5 is a diagram showing an example in which the resist liquid stays in the step ST at the boundary between the rim portion SR of the substrate W and the inner area IA in the liquid film drying process. In FIG. 5, the upper, middle, and lower portions show enlarged cross-sectional views in chronological order of the state of the resist liquid R1 or the resist film R2 present in the rim portion SR of the substrate W and its peripheral portion during the liquid film drying process.

図５の上段の断面図に示すように、液膜乾燥工程の開始時点では、基板Ｗの上面Ｓ１に流動性を有するレジスト液Ｒ１の液膜が形成されている。基板Ｗが回転することにより、レジスト液Ｒ１には基板Ｗの中心から外周端部に向かう遠心力が作用する。また、基板Ｗを取り囲む空間内に気流が発生する。それにより、図５の中段の断面図に太い実線の矢印で示すように、液膜の上層部分で流動するレジスト液Ｒ１の一部が基板Ｗの外方に振り切られる。 As shown in the upper cross-sectional view of FIG. 5, a liquid film of the resist liquid R1 having fluidity is formed on the upper surface S1 of the substrate W at the start of the liquid film drying process. As the substrate W rotates, a centrifugal force acts on the resist liquid R1 from the center of the substrate W toward the outer peripheral edge. Also, an air current is generated in the space surrounding the substrate W. As shown in FIG. As a result, part of the resist liquid R1 flowing in the upper layer portion of the liquid film is shaken off to the outside of the substrate W, as indicated by the thick solid-line arrow in the middle cross-sectional view of FIG.

流動する余分なレジスト液Ｒ１が振り切られることにより、基板Ｗの上面Ｓ１においては、レジスト液Ｒ１の液膜が基板Ｗの中心から外周端部に向かって薄膜化されつつ連続的に乾燥する。このとき、図５の中段の断面図に白抜きの矢印で示すように、段差ＳＴに滞留したレジスト液Ｒ１が乾燥すると、図５の下段の断面図に示すように、段差ＳＴおよびその周辺部に形成されるレジスト膜Ｒ２の厚みが他の部分に比べて厚くなる。 By shaking off the surplus flowing resist liquid R1, the liquid film of the resist liquid R1 on the upper surface S1 of the substrate W is continuously dried while being thinned from the center of the substrate W toward the outer peripheral edge. At this time, as indicated by the white arrow in the middle cross-sectional view of FIG. The thickness of the resist film R2 formed in the area becomes thicker than that of other areas.

上記のように、段差ＳＴでレジスト液が滞留することを防止するために、液膜乾燥工程の期間中基板Ｗの回転速度を著しく高くする方法が考えられる。この場合、液膜乾燥工程で液膜の上層部分を流れるレジスト液Ｒ１により大きい遠心力が作用する。また、基板Ｗを取り囲む空間内により強い気流が発生する。しかしながら、液膜乾燥工程の初期段階で基板Ｗの回転速度を著しく高くすると、基板Ｗ上に形成されるレジスト膜Ｒ２の全体に渡って斑が発生する。 As described above, in order to prevent the resist liquid from stagnation at the step ST, a method of significantly increasing the rotational speed of the substrate W during the liquid film drying process can be considered. In this case, a larger centrifugal force acts on the resist liquid R1 flowing in the upper layer portion of the liquid film in the liquid film drying step. Also, a stronger air current is generated in the space surrounding the substrate W. FIG. However, if the rotational speed of the substrate W is significantly increased in the initial stage of the liquid film drying process, the resist film R2 formed on the substrate W will be mottled over its entirety.

そこで、本実施の形態では、液膜乾燥工程における基板Ｗの回転速度が時間の経過とともに２段階に変更される。具体的には、液膜乾燥工程の開始時点から液膜乾燥工程の終了時点よりも前の中間時点までの間、基板Ｗの回転速度が第１の回転速度に調整される。その後、中間時点から終了時点までの間、基板Ｗの回転速度が第１の回転速度よりも高い第２の回転速度に調整される。 Therefore, in the present embodiment, the rotational speed of the substrate W in the liquid film drying process is changed in two steps over time. Specifically, the rotation speed of the substrate W is adjusted to the first rotation speed from the start time of the liquid film drying process to an intermediate time before the end time of the liquid film drying process. Thereafter, the rotation speed of the substrate W is adjusted to a second rotation speed higher than the first rotation speed from the intermediate time to the end time.

ここで、基板Ｗの内側領域ＩＡのうち基板Ｗの中心を含みかつ基板Ｗの中心に対して同心となる円形の領域を中央領域と呼ぶ。また、基板Ｗの内側領域ＩＡのうち中央領域を取り囲みかつ基板Ｗの外周端部を含む領域を円環領域と呼ぶ。なお、中央領域の直径は、例えば基板Ｗの直径の半分程度である。 Here, of the inner area IA of the substrate W, a circular area that includes the center of the substrate W and is concentric with the center of the substrate W is called a central area. A region surrounding the central region of the inner region IA of the substrate W and including the outer peripheral edge of the substrate W is called an annular region. The diameter of the central region is about half the diameter of the substrate W, for example.

この場合、第１の回転速度は、例えばシミュレーションまたは実験等により、中央領域に形成されるレジスト膜Ｒ２に斑が生じない程度の速度に定められる。一方、第２の回転速度は、例えばシミュレーションまたは実験等により、流動性を有するレジスト液Ｒ１が段差ＳＴに滞留しない程度の速度に定められる。さらに、中間時点は、液膜乾燥工程が開始された後、基板Ｗの中央領域上のレジスト液Ｒ１が乾燥しかつ円環領域上に存在するレジスト液Ｒ１が流動する状態にある期間内となるように定められる。 In this case, the first rotation speed is determined, for example, by simulation or experiment, to a speed that does not cause spots in the resist film R2 formed in the central region. On the other hand, the second rotation speed is determined, for example, by simulation or experiment, to a speed at which the fluid resist liquid R1 does not stay on the step ST. Further, the intermediate time point is a period after the liquid film drying process is started, during which the resist solution R1 on the central region of the substrate W is dried and the resist solution R1 existing on the annular region is in a flowing state. is defined as

上記のように基板Ｗの回転速度を調整することにより、液膜乾燥工程の開始時点から中間時点にかけては、斑を発生させることなく中央領域上のレジスト液Ｒ１を乾燥させることができる。一方、液膜乾燥工程の中間時点から終了時点にかけては、円環領域上を流れるレジスト液Ｒ１により大きな遠心力が作用する。また、基板Ｗを取り囲む空間内により強い気流が発生する。それにより、レジスト液Ｒ１が段差ＳＴに滞留することが防止される。したがって、段差ＳＴおよびその周辺部におけるレジスト膜Ｒ２の厚みが局部的に大きくなることが防止される。 By adjusting the rotation speed of the substrate W as described above, the resist liquid R1 on the central region can be dried without generating spots from the start point to the middle point of the liquid film drying process. On the other hand, from the middle point to the end point of the liquid film drying process, a large centrifugal force acts on the resist liquid R1 flowing over the annular region. Also, a stronger air current is generated in the space surrounding the substrate W. FIG. This prevents the resist liquid R1 from remaining on the step ST. Therefore, the thickness of the resist film R2 at the step ST and its peripheral portion is prevented from being locally increased.

［３］塗布処理中の基板Ｗの回転速度の制御例
図６は、本発明の一実施の形態に係る塗布処理中の基板Ｗの回転速度の制御例を示す図である。図６の上段には、図１の塗布処理装置１による塗布処理中の基板Ｗの回転速度の変化がグラフによって示される。図６の上段のグラフにおいて、縦軸は基板Ｗの回転速度を表し、横軸は時間を表す。図６の下段の複数の吹き出しには、塗布処理中の複数の時点で基板Ｗ上に存在するレジスト液Ｒ１またはレジスト膜Ｒ２の状態が平面図および縦断面図により示される。 [3] Control Example of Rotation Speed of Substrate W During Coating FIG. 6 is a diagram showing an example of control of the rotation speed of the substrate W during coating according to one embodiment of the present invention. The upper part of FIG. 6 is a graph showing changes in the rotational speed of the substrate W during coating processing by the coating processing apparatus 1 of FIG. In the upper graph of FIG. 6, the vertical axis represents the rotational speed of the substrate W, and the horizontal axis represents time. A plurality of balloons in the lower part of FIG. 6 show the states of the resist solution R1 or the resist film R2 present on the substrate W at a plurality of times during the coating process by plan views and vertical cross-sectional views.

図７は、図６の液膜乾燥工程において基板Ｗのリム部ＳＲおよびその周辺部に存在するレジスト液Ｒ１またはレジスト膜Ｒ２の状態の変化を示す図である。図７では、液膜乾燥工程における基板Ｗのリム部ＳＲおよびその周辺部に存在するレジスト液Ｒ１またはレジスト膜Ｒ２の状態が上から下へ４段階の時系列順に拡大断面図で示される。 FIG. 7 is a diagram showing changes in the state of the resist liquid R1 or the resist film R2 existing on the rim portion SR of the substrate W and its peripheral portion in the liquid film drying step of FIG. In FIG. 7, the state of the resist solution R1 or the resist film R2 existing in the rim portion SR of the substrate W and its peripheral portion in the liquid film drying step is shown in enlarged cross-sectional views in four steps from top to bottom in chronological order.

なお、基板Ｗの回転速度は、制御部３０が図１の回転駆動部１３を制御することにより調整される。また、基板Ｗの上面Ｓ１に対する溶剤の供給および停止は、制御部３０が図１の溶剤供給系２４を制御することにより行われる。また、基板Ｗの上面Ｓ１に対するレジスト液Ｒ１の供給および停止は、制御部３０が図１の塗布液供給系２２を制御することにより行われる。さらに、基板Ｗの下面Ｓ２に対するリンス液の供給および停止は、制御部３０が図１のリンス液供給系１８を制御することにより行われる。 Note that the rotation speed of the substrate W is adjusted by the control unit 30 controlling the rotation driving unit 13 shown in FIG. Further, supply and stop of the solvent to the upper surface S1 of the substrate W are performed by the controller 30 controlling the solvent supply system 24 of FIG. Supply and stop of the resist liquid R1 to the upper surface S1 of the substrate W are performed by the control unit 30 controlling the coating liquid supply system 22 of FIG. Further, supply and stop of the rinse liquid to the lower surface S2 of the substrate W is performed by the controller 30 controlling the rinse liquid supply system 18 of FIG.

塗布処理装置１による塗布処理の初期状態においては、図３および図４の構成を有する未処理の基板Ｗが、図１の吸着保持部１１により水平姿勢で吸着保持される。このとき、基板Ｗの回転速度は０に維持される。さらに、カップ１５の外周壁部１５ｙの内周面が基板Ｗの外周端部に対向するように、カップ１５が上下方向に位置決めされる。 In the initial state of coating processing by the coating processing apparatus 1, an unprocessed substrate W having the configuration shown in FIGS. 3 and 4 is sucked and held in a horizontal posture by the suction holding section 11 shown in FIG. At this time, the rotation speed of the substrate W is maintained at zero. Further, the cup 15 is vertically positioned such that the inner peripheral surface of the outer peripheral wall portion 15y of the cup 15 faces the outer peripheral end portion of the substrate W. As shown in FIG.

図６に示すように、まず液膜形成工程が開始される。時点ｔ１から時点ｔ２までの期間ｐ１で、図１の溶剤ノズル２３から基板Ｗの上面Ｓ１に所定量の溶剤が供給される。それにより、時点ｔ２に対応する吹き出し内に示すように、基板Ｗの上面Ｓ１上で所定量の溶剤が保持される。 As shown in FIG. 6, first, the liquid film forming process is started. During a period p1 from time t1 to time t2, a predetermined amount of solvent is supplied from the solvent nozzle 23 of FIG. As a result, a predetermined amount of solvent is retained on the upper surface S1 of the substrate W, as shown in the blowout corresponding to time t2.

次に、時点ｔ３から時点ｔ４にかけて基板Ｗの回転速度が０からｓ１まで上昇し、基板Ｗの上面Ｓ１に保持された溶剤が基板Ｗの中心から基板Ｗの外周端部に向かって広がる。回転速度ｓ１は、例えば５００ｒｐｍ以上１５００ｒｐｍ以下の範囲内に設定される。 Next, from time t3 to time t4, the rotation speed of the substrate W increases from 0 to s1, and the solvent held on the upper surface S1 of the substrate W spreads from the center of the substrate W toward the outer peripheral edge of the substrate W. The rotation speed s1 is set within a range of, for example, 500 rpm or more and 1500 rpm or less.

上記のように、未処理の基板Ｗの上面Ｓ１に溶剤が供給されることにより、基板Ｗの上面Ｓ１が改質され、レジスト液Ｒ１が基板Ｗの上面Ｓ１で広がりやすくなる。このように、レジスト液Ｒ１の塗布前に基板Ｗの上面Ｓ１を改質させる処理は、プリウェットと呼ばれる。なお、プリウェット中、基板Ｗは回転してもよい。この場合、基板Ｗの回転速度は、例えば０ｒｐｍよりも大きく１０００ｒｐｍ以下の範囲内に設定される。 As described above, by supplying the solvent to the upper surface S1 of the unprocessed substrate W, the upper surface S1 of the substrate W is modified, and the resist liquid R1 spreads easily on the upper surface S1 of the substrate W. Thus, the process of modifying the upper surface S1 of the substrate W before applying the resist liquid R1 is called pre-wetting. The substrate W may be rotated during pre-wetting. In this case, the rotation speed of the substrate W is set, for example, within a range greater than 0 rpm and 1000 rpm or less.

次に、時点ｔ４から時点ｔ６までの期間ｐ２で、図１のレジストノズル２１から基板Ｗの上面Ｓ１に所定量のレジスト液Ｒ１が供給される。このとき、時点ｔ４から時点ｔ６よりも前の時点ｔ５にかけて基板Ｗの回転速度がｓ１よりも高いｓ２まで上昇する。また、時点ｔ５から一定期間基板Ｗの回転速度がｓ２で維持される。回転速度ｓ２は、例えば１０００ｒｐｍ以上３０００ｒｐｍ以下の範囲内に設定される。それにより、時点ｔ５に対応する吹き出し内に示すように、基板Ｗの上面Ｓ１の中央部にレジスト液Ｒ１の塊（コア）が形成される。また、時点ｔ５から時点ｔ６にかけてレジスト液Ｒ１のコアが整形される。 Next, during a period p2 from time t4 to time t6, a predetermined amount of resist liquid R1 is supplied from the resist nozzle 21 of FIG. At this time, the rotation speed of the substrate W increases to s2, which is higher than s1, from time t4 to time t5 before time t6. Further, the rotation speed of the substrate W is maintained at s2 for a certain period from time t5. The rotation speed s2 is set, for example, within a range of 1000 rpm or more and 3000 rpm or less. As a result, a mass (core) of the resist liquid R1 is formed in the central portion of the upper surface S1 of the substrate W, as shown in the balloon corresponding to time t5. Further, the core of the resist solution R1 is shaped from time t5 to time t6.

時点ｔ５から一定期間基板Ｗの回転速度がｓ２で維持された後、時点ｔ６にかけて基板Ｗの回転速度がｓ１およびｓ２よりも低いｓ３まで下降する。時点ｔ６から一定期間基板Ｗの回転速度がｓ３で維持される。回転速度ｓ３は、例えば０ｒｐｍ以上５００ｒｐｍ以下の範囲内に設定される。 After the rotation speed of the substrate W is maintained at s2 for a certain period from time t5, the rotation speed of the substrate W decreases to s3, which is lower than s1 and s2, toward time t6. The rotation speed of the substrate W is maintained at s3 for a certain period from time t6. The rotation speed s3 is set, for example, within a range of 0 rpm or more and 500 rpm or less.

時点ｔ６から一定期間経過後、時点ｔ７にかけて基板Ｗの回転速度がｓ２よりも高いｓ４まで上昇し、一定期間基板Ｗの回転速度がｓ４で維持される。回転速度ｓ４は、例えば０ｒｐｍ以上３０００ｒｐｍ以下の範囲内に設定される。また、時点ｔ７から一定期間経過後、時点ｔ８にかけて基板Ｗの回転速度がｓ４よりも低いｓ５まで下降する。回転速度ｓ５は、例えば５００ｒｐｍ以上１５００ｒｐｍ以下の範囲内に設定される。上記の時点ｔ６から時点ｔ８にかけて基板Ｗの中心から外周端部に向けてレジスト液Ｒ１が広がる。それにより、時点ｔ８に対応する吹き出し内に示すように、基板Ｗの上面Ｓ１全体にレジスト液Ｒ１の液膜が形成され、液膜形成工程が終了する。 After a certain period of time has elapsed from time t6, the rotational speed of the substrate W increases to s4, which is higher than s2, toward time t7, and the rotational speed of the substrate W is maintained at s4 for a certain period of time. The rotation speed s4 is set, for example, within a range of 0 rpm or more and 3000 rpm or less. Further, after a certain period of time has elapsed from time t7, the rotation speed of the substrate W decreases to s5, which is lower than s4, toward time t8. The rotation speed s5 is set within a range of, for example, 500 rpm or more and 1500 rpm or less. From time t6 to time t8, the resist solution R1 spreads from the center of the substrate W toward the outer peripheral edge. As a result, a liquid film of the resist liquid R1 is formed on the entire upper surface S1 of the substrate W as shown in the balloon corresponding to time t8, and the liquid film forming process is completed.

次に、液膜乾燥工程が開始される。液膜乾燥工程では、時点ｔ８から時点ｔ９にかけて基板Ｗの回転速度がｓ５で維持される。時点ｔ８は、上記の液膜乾燥工程の開始時点に相当する。回転速度ｓ５は、上記の第１の回転速度に相当する。 Next, the liquid film drying process is started. In the liquid film drying process, the rotation speed of the substrate W is maintained at s5 from time t8 to time t9. Time t8 corresponds to the start time of the liquid film drying process. The rotation speed s5 corresponds to the first rotation speed described above.

時点ｔ８では、図７の上から１段目の断面図に示すように、基板Ｗの上面Ｓ１に流動性を有するレジスト液Ｒ１の液膜が形成されている。時点ｔ８から時点ｔ９の間では、基板Ｗの回転速度がｓ５（第１の回転速度）で維持されることにより、図７の上から２段目の断面図に太い実線の矢印で示すように、液膜の上層部分で流動するレジスト液Ｒ１の一部が基板Ｗの外方に振り切られる。このとき、基板Ｗの中央領域においては、基板Ｗの中心から外周端部に向けてレジスト液Ｒ１が順次乾燥してゆく。 At time t8, a liquid film of the resist liquid R1 having fluidity is formed on the upper surface S1 of the substrate W, as shown in the first sectional view from the top of FIG. Between the time t8 and the time t9, the rotation speed of the substrate W is maintained at s5 (first rotation speed), so that as indicated by the thick solid arrow in the second top cross-sectional view of FIG. , a portion of the resist liquid R1 flowing in the upper layer portion of the liquid film is shaken off to the outside of the substrate W. As shown in FIG. At this time, in the central region of the substrate W, the resist liquid R1 is dried sequentially from the center of the substrate W toward the outer peripheral edge.

時点ｔ９は上記の液膜乾燥工程の中間時点に相当する。時点ｔ９では、図６の時点ｔ９に対応する吹き出し内に示すように、基板Ｗの上面Ｓ１の中央領域にレジスト膜Ｒ２が形成されている。一方、基板Ｗの上面Ｓ１の円環領域では、流動性を有するレジスト液Ｒ１が基板Ｗの中央から基板Ｗの外周端部に向かって流れる。 Time t9 corresponds to the middle time of the liquid film drying process. At the time t9, the resist film R2 is formed on the central region of the upper surface S1 of the substrate W, as shown in the balloon corresponding to the time t9 in FIG. On the other hand, in the annular region of the upper surface S1 of the substrate W, the resist liquid R1 having fluidity flows from the center of the substrate W toward the outer peripheral edge of the substrate W. As shown in FIG.

その後、時点ｔ９で基板Ｗの回転速度がｓ５よりも高いｓ６まで上昇する。回転速度ｓ６は、例えば１５００ｒｐｍ以上３５００ｒｐｍ以下の範囲内に設定される。時点ｔ９から時点ｔ１０にかけて基板Ｗの回転速度がｓ６で維持される。回転速度ｓ６は、上記の第２の回転速度に相当する。時点ｔ１０で液膜乾燥工程が終了する。それにより、時点ｔ１０では、図６の時点ｔ１０に対応する吹き出し内に示すように、基板Ｗの上面Ｓ１の全体にレジスト膜Ｒ２が形成される。時点ｔ１０は上記の液膜乾燥工程の終了時点に相当する。 After that, at time t9, the rotation speed of the substrate W increases to s6, which is higher than s5. The rotation speed s6 is set, for example, within a range of 1500 rpm or more and 3500 rpm or less. The rotation speed of the substrate W is maintained at s6 from time t9 to time t10. The rotation speed s6 corresponds to the second rotation speed described above. The liquid film drying step ends at time t10. As a result, at time t10, a resist film R2 is formed over the entire upper surface S1 of the substrate W, as shown in the balloon corresponding to time t10 in FIG. Time t10 corresponds to the end of the liquid film drying step.

時点ｔ９から時点ｔ１０の間では、基板Ｗの回転速度がｓ６（第２の回転速度）で維持されることにより、図７の上から３段目の断面図に太い実線の矢印で示すように、液膜の上層部分で流動するレジスト液Ｒ１が基板Ｗの外方により強く振り切られる。それにより、段差ＳＴおよびその周辺部でレジスト液Ｒ１が滞留することが防止されつつ、基板Ｗの円環領域に存在するレジスト液Ｒ１が乾燥する。したがって、時点ｔ１０では、図７の上から４段目の断面図に示すように、段差ＳＴおよびその周辺部に形成されるレジスト膜Ｒ２の厚みが他の部分とほぼ等しくなる。これらの結果、液膜乾燥工程の終了時には、段差ＳＴを含む基板Ｗの上面Ｓ１全体に、均一な厚みでレジスト膜Ｒ２が形成される。 Between the time t9 and the time t10, the rotation speed of the substrate W is maintained at s6 (second rotation speed), so that as indicated by the thick solid arrow in the cross-sectional view in the third row from the top in FIG. , the resist liquid R1 flowing in the upper layer portion of the liquid film is shaken off from the outside of the substrate W more strongly. As a result, the resist solution R1 existing in the annular region of the substrate W is dried while preventing the resist solution R1 from remaining in the step ST and its peripheral portion. Therefore, at time t10, as shown in the fourth cross-sectional view from the top in FIG. 7, the thickness of the resist film R2 formed on the step ST and its peripheral portion is substantially equal to that of the other portions. As a result, at the end of the liquid film drying process, the resist film R2 is formed with a uniform thickness over the entire upper surface S1 of the substrate W including the step ST.

時点ｔ１０の経過後、一定期間基板Ｗの回転速度がｓ５で維持される。その後、時点ｔ１１で回転速度がｓ５およびｓ６よりも低いｓ８まで低下する。この状態で、一定期間図１の複数の下面ノズル１７から基板Ｗの下面Ｓ２にリンス液が供給される。それにより、基板Ｗの下面Ｓ２に付着したレジスト液Ｒ１またはレジストの固形物がリンス液により除去される。 After the time t10, the rotation speed of the substrate W is maintained at s5 for a certain period of time. After that, at time t11, the rotation speed decreases to s8, which is lower than s5 and s6. In this state, the rinse liquid is supplied to the lower surface S2 of the substrate W from the plurality of lower surface nozzles 17 shown in FIG. 1 for a certain period of time. As a result, the resist liquid R1 or the solid matter of the resist adhering to the lower surface S2 of the substrate W is removed by the rinse liquid.

このように、基板Ｗの下面を洗浄する工程（いわゆるバックリンス工程）では、基板Ｗの回転速度が液膜乾燥工程で設定された回転速度よりも低く設定されている。そのため、バックリンス工程では、液膜乾燥工程中の回転速度で基板Ｗを回転させる場合に比べて、基板Ｗから飛散するリンス液の量を低減することができる。それにより、基板Ｗの下面Ｓ２から飛散するリンス液が基板Ｗの上面Ｓ１上に形成されたレジスト膜Ｒ２上に付着することが防止される。その結果、基板Ｗの処理不良が発生することを防止することができる。上記のバックリンス工程が終了することにより、基板Ｗの塗布処理が終了する。 Thus, in the process of cleaning the lower surface of the substrate W (so-called back rinse process), the rotational speed of the substrate W is set lower than the rotational speed set in the liquid film drying process. Therefore, in the back rinsing process, the amount of the rinsing liquid that scatters from the substrate W can be reduced compared to the case where the substrate W is rotated at the rotational speed during the liquid film drying process. As a result, the rinsing liquid that scatters from the lower surface S2 of the substrate W is prevented from adhering to the resist film R2 formed on the upper surface S1 of the substrate W. FIG. As a result, it is possible to prevent the processing failure of the substrate W from occurring. When the back rinse process is completed, the coating process of the substrate W is completed.

上記の図６の例において、時点ｔ８から時点ｔ１０までの時間の長さ（液膜乾燥工程の開始から終了までの時間）は、例えば１５秒以上３０秒以下である。また、時点ｔ８から時点ｔ９までの時間の長さは、例えば１０秒以上２０秒以下である。 In the example of FIG. 6 above, the length of time from time t8 to time t10 (the time from the start to the end of the liquid film drying step) is, for example, 15 seconds or more and 30 seconds or less. Also, the length of time from time t8 to time t9 is, for example, 10 seconds or more and 20 seconds or less.

［４］液膜乾燥工程の中間時点
上記のように、液膜乾燥工程の中間時点は、液膜乾燥工程が開始された後、基板Ｗの中央領域上のレジスト液Ｒ１が乾燥しかつ円環領域上に存在するレジスト液Ｒ１が流動する状態にある期間内となるように定められる。 [4] Intermediate time point of the liquid film drying process As described above, at the intermediate time point of the liquid film drying process, after the liquid film drying process is started, the resist solution R1 on the central region of the substrate W is dried and is circular. It is determined to be within a period during which the resist liquid R1 present on the region is in a flowing state.

ここで、例えば図６の例において、液膜乾燥工程中基板Ｗの回転速度をｓ５で一定に維持する場合には、基板Ｗ上のレジスト液Ｒ１の全体が乾燥する前に、液膜の上層部分を流動するレジスト液Ｒ１により干渉縞が発生する。この干渉縞は、基板Ｗの回転速度およびレジスト液Ｒ１の種類によって視認することが可能である。 Here, for example, in the example of FIG. 6, when the rotational speed of the substrate W is kept constant at s5 during the liquid film drying process, the upper layer of the liquid film is dried before the entire resist liquid R1 on the substrate W is dried. Interference fringes are generated by the resist liquid R1 flowing through the portion. This interference fringe can be visually recognized depending on the rotation speed of the substrate W and the type of the resist liquid R1.

したがって、上記の干渉縞を確認することが可能である場合、中間時点は、液膜乾燥工程が開始された後、基板Ｗの上面Ｓ１に供給されたレジスト液Ｒ１の表面に発生する干渉縞が消滅するよりも前の時点に定めることが好ましい。それにより、液膜乾燥工程の中間時点で基板Ｗの回転速度を上昇させることにより、基板Ｗの外周部およびその近傍に存在しかつ流動性を有するレジスト液Ｒ１を円滑に振り切ることができる。 Therefore, when it is possible to confirm the above interference fringes, the interference fringes generated on the surface of the resist liquid R1 supplied to the upper surface S1 of the substrate W after the liquid film drying process is started at an intermediate time point. It is preferable to set it at a point in time before it disappears. As a result, by increasing the rotation speed of the substrate W at an intermediate point in the liquid film drying process, the fluid resist liquid R1 existing in and around the outer peripheral portion of the substrate W can be smoothly shaken off.

［５］効果
（１）上記の塗布処理装置１においては、リム部ＳＲを有する基板Ｗに塗布処理が施される。その塗布処理は、液膜形成工程および液膜乾燥工程を含む。まず、液膜形成工程において、プリウェット後に回転する基板Ｗの上面Ｓ１にレジスト液Ｒ１が供給される。それにより、基板Ｗの上面Ｓ１全体にレジスト液が広げられ、液膜形成工程が終了する。 [5] Effect (1) In the coating processing apparatus 1 described above, the coating processing is performed on the substrate W having the rim portion SR. The coating process includes a liquid film forming process and a liquid film drying process. First, in the liquid film forming process, the resist liquid R1 is supplied to the upper surface S1 of the substrate W rotating after pre-wetting. Thereby, the resist liquid is spread over the entire upper surface S1 of the substrate W, and the liquid film forming process is completed.

次に、液膜乾燥工程では、基板Ｗを乾燥させるために、開始時点から中間時点にかけて基板が第１の回転速度で回転する。それにより、基板Ｗの中央領域に位置しかつ流動性を有するレジスト液が基板Ｗの外周部に向かって移動する。したがって、基板Ｗの上面Ｓ１における中央領域が乾燥する。 Next, in the liquid film drying process, in order to dry the substrate W, the substrate is rotated at the first rotation speed from the start point to the intermediate point. As a result, the resist liquid located in the central region of the substrate W and having fluidity moves toward the outer peripheral portion of the substrate W. As shown in FIG. Therefore, the central region of the upper surface S1 of the substrate W is dried.

続いて、液膜乾燥工程の中間時点から終了時点にかけて基板Ｗが第１の回転速度よりも高い第２の回転速度で回転する。この場合、基板Ｗの外周部およびその近傍で流動するレジスト液Ｒ１に、より大きい遠心力が作用する。また、基板Ｗを取り囲む空間に、より大きな気流が発生する。それにより、基板Ｗの上面Ｓ１上で基板Ｗの中心から外周部に向かって流動するレジスト液Ｒ１の大部分が基板Ｗの中央領域からリム部ＳＲを超えて基板Ｗの外方に飛散する。換言すれば、基板Ｗの上面Ｓ１上でリム部ＳＲと内側領域ＩＡとの境界の段差ＳＴに導かれる不要なレジスト液Ｒ１が、基板Ｗの外方に振り切られる。 Subsequently, the substrate W is rotated at a second rotation speed higher than the first rotation speed from the middle point to the end point of the liquid film drying process. In this case, a larger centrifugal force acts on the resist liquid R1 flowing in the outer peripheral portion of the substrate W and its vicinity. In addition, a larger airflow is generated in the space surrounding the substrate W. As shown in FIG. As a result, most of the resist liquid R1 flowing from the center of the substrate W toward the outer periphery on the upper surface S1 of the substrate W scatters outward from the substrate W from the central region beyond the rim portion SR. In other words, the unnecessary resist liquid R1 guided to the step ST at the boundary between the rim portion SR and the inner area IA on the upper surface S1 of the substrate W is shaken off to the outside of the substrate W.

その結果、塗布処理時に不要なレジスト液Ｒ１が基板Ｗ上に残留することに起因して基板Ｗの処理不良および基板Ｗの汚染が発生することを防止することができる。 As a result, it is possible to prevent the substrate W from being poorly processed and contaminated due to the unnecessary resist liquid R1 remaining on the substrate W during the coating process.

（２）図６の例においては、第２の回転速度であるｓ７は、第１の回転速度であるｓ４の２倍の回転速度よりも高く設定されている。この場合、リム部ＳＲの内縁に位置する段差ＳＴに導かれる不要なレジスト液Ｒ１に、より大きな遠心力が作用する。また、基板Ｗを取り囲む空間にさらに大きな気流が発生する。それにより、リム部ＳＲの内側の不要なレジスト液Ｒ１が、より円滑に基板Ｗの外方に振り切られる。 (2) In the example of FIG. 6, the second rotation speed s7 is set higher than the rotation speed twice as high as the first rotation speed s4. In this case, a larger centrifugal force acts on the unnecessary resist liquid R1 guided to the step ST located at the inner edge of the rim portion SR. Further, a larger airflow is generated in the space surrounding the substrate W. As shown in FIG. Thereby, the unnecessary resist liquid R1 inside the rim portion SR is shaken off to the outside of the substrate W more smoothly.

［６］確認試験
本発明者らは、上記の塗布処理による効果を確認するために、以下の確認試験を行った。まず、本発明者らは、図６の例に従って塗布処理を行うことにより実施例に係る基板Ｗを作製した。以下の説明では、この基板Ｗを実施例基板Ｗ１と呼ぶ。また、本発明者らは、液膜乾燥工程の期間中で基板Ｗの回転速度を第１の回転速度（ｓ５）で一定に維持する点を除いて図６の例に従って塗布処理を行うことにより比較例に係る基板Ｗを作製した。以下の説明では、この基板Ｗを比較例基板Ｗ２と呼ぶ。なお、実施例基板Ｗ１および比較例基板Ｗ２の作製時には、レジスト膜Ｒ２の形成後に、リム部ＳＲを含む基板周縁部に存在するレジスト膜Ｒ２の部分を除去した。 [6] Confirmation Test The present inventors conducted the following confirmation test in order to confirm the effects of the coating treatment described above. First, the present inventors produced a substrate W according to an example by performing a coating process according to the example of FIG. In the following description, this substrate W will be referred to as an example substrate W1. Further, the present inventors performed the coating process according to the example of FIG. A substrate W according to a comparative example was produced. In the following description, this substrate W will be referred to as a comparative example substrate W2. When the example substrate W1 and the comparative example substrate W2 were produced, the portion of the resist film R2 present in the substrate peripheral portion including the rim portion SR was removed after the formation of the resist film R2.

本発明者らは、作製した実施例基板Ｗ１および比較例基板Ｗ２について、各基板の中心を通る直線上のレジスト膜Ｒ２の膜厚分布を測定した。図８は、実施例基板Ｗ１および比較例基板Ｗ２のレジスト膜Ｒ２の膜厚分布の一部を示す図である。図８では、実施例基板Ｗ１および比較例基板Ｗ２の模式的平面図とともに、模式的平面図のうち点線で取り囲まれた２つの部分の膜厚分布が、拡大されたグラフにより示される。 The present inventors measured the film thickness distribution of the resist film R2 on a straight line passing through the center of each of the fabricated example substrate W1 and comparative example substrate W2. FIG. 8 is a diagram showing part of the film thickness distribution of the resist film R2 of the example substrate W1 and the comparative example substrate W2. In FIG. 8, along with schematic plan views of the example substrate W1 and the comparative example substrate W2, the film thickness distributions of two portions surrounded by dotted lines in the schematic plan views are shown by enlarged graphs.

図８のグラフにおいては、縦軸がレジスト膜Ｒ２の膜厚を表し、横軸が基板の中心を通る直線Ｌ上の位置を表す。実施例基板Ｗ１および比較例基板Ｗ２の直径は、共に３００ｍｍである。横軸においては、「１４７．０」は、直線Ｌ上で基板Ｗの中心から一方向（図８の例では右方向）に１４７ｍｍ離間した位置を表す。また、「－１４７．０」は、直線Ｌ上で基板Ｗの中心から逆方向（図８の例では左方向）に１４７ｍｍ離間した位置を表す。また、横軸においては、直線Ｌ上の段差ＳＴの位置が白抜きの矢印で示される。さらに、図８のグラフにおいては、実線が実施例基板Ｗ１に対応する膜厚分布を示し、一点鎖線が比較例基板Ｗ２に対応する膜厚分布を示す。 In the graph of FIG. 8, the vertical axis represents the film thickness of the resist film R2, and the horizontal axis represents the position on the straight line L passing through the center of the substrate. Both the example substrate W1 and the comparative example substrate W2 have a diameter of 300 mm. On the horizontal axis, "147.0" represents a position 147 mm away from the center of the substrate W on the straight line L in one direction (to the right in the example of FIG. 8). "-147.0" represents a position 147 mm away from the center of the substrate W on the straight line L in the opposite direction (to the left in the example of FIG. 8). In addition, on the horizontal axis, the position of the step ST on the straight line L is indicated by an outline arrow. Further, in the graph of FIG. 8, the solid line indicates the film thickness distribution corresponding to the example substrate W1, and the one-dot chain line indicates the film thickness distribution corresponding to the comparative example substrate W2.

図８に示すように、実施例基板Ｗ１の段差ＳＴおよびその近傍に形成されるレジスト膜Ｒ２の膜厚は、比較例基板Ｗ２の段差ＳＴおよびその近傍に形成されるレジスト膜Ｒ２の膜厚に比べて十分に小さい。これにより、実施例基板Ｗ１に形成されたレジスト膜Ｒ２の膜厚分布は、比較例基板Ｗ２に形成されたレジスト膜Ｒ２の膜厚分布に比べて均一化されていることが確認できた。 As shown in FIG. 8, the film thickness of the resist film R2 formed at and near the step ST of the example substrate W1 is similar to the film thickness of the resist film R2 formed at and near the step ST of the comparative example substrate W2. small enough compared to As a result, it was confirmed that the film thickness distribution of the resist film R2 formed on the example substrate W1 was more uniform than the film thickness distribution of the resist film R2 formed on the comparative example substrate W2.

［７］他の実施の形態
（１）上記実施の形態に係る図４の基板Ｗにおいて、リム部ＳＲと内側領域ＩＡとの境界に形成される段差ＳＴは、２つの段差を含むが、本発明はこれに限定されない。処理対象となる基板Ｗにおいて、段差ＳＴは、１つの段差のみを含んでもよい。また、段差ＳＴは、基板Ｗの縦断面において、リム部ＳＲの内周面と内側領域ＩＡとが曲線でつながるように形成されていてもよい。 [7] Other Embodiments (1) In the substrate W shown in FIG. The invention is not so limited. In the substrate W to be processed, the step ST may include only one step. Further, the step ST may be formed so that the inner peripheral surface of the rim portion SR and the inner area IA are connected by a curved line in the vertical cross section of the substrate W.

（２）上記実施の形態の図６の例では、液膜形成工程で設定される基板Ｗの回転速度ｓ３，ｓ１，ｓ２，ｓ４がこの順で高くなるように設定されているが、回転速度ｓ１～ｓ４の関係は上記の例に限定されない。回転速度ｓ１～ｓ４の各々は、上記実施の形態で例示された速度の範囲内に設定されていればよい。 (2) In the example of FIG. 6 of the above embodiment, the rotational speeds s3, s1, s2, and s4 of the substrate W set in the liquid film forming process are set to increase in this order. The relationship between s1 to s4 is not limited to the above example. Each of the rotational speeds s1 to s4 may be set within the range of speeds exemplified in the above embodiment.

（３）上記実施の形態の図６の例では、液膜形成工程でプリウェットが行われるが、本発明はこれに限定されない。液膜形成工程においてプリウェットは行われなくてもよい。 (3) In the example of the embodiment shown in FIG. 6, pre-wetting is performed in the liquid film forming process, but the present invention is not limited to this. Pre-wetting may not be performed in the liquid film forming process.

（４）上記実施の形態の図６の例では、液膜形成工程で、回転する基板Ｗの上面Ｓ１にレジスト液Ｒ１が供給されるが、本発明はこれに限定されない。液膜形成工程においては、回転を停止している基板Ｗに所定量のレジスト液Ｒ１を供給した後、レジスト液Ｒ１の供給が停止された状態で基板Ｗを回転させることにより基板Ｗの上面Ｓ１全体にレジスト液Ｒ１を塗布してもよい。 (4) In the example of the embodiment shown in FIG. 6, the resist liquid R1 is supplied to the upper surface S1 of the rotating substrate W in the liquid film forming process, but the present invention is not limited to this. In the liquid film forming step, after a predetermined amount of resist liquid R1 is supplied to the substrate W whose rotation is stopped, the substrate W is rotated while the supply of the resist liquid R1 is stopped, whereby the upper surface S1 of the substrate W is formed. The resist solution R1 may be applied to the entire surface.

（５）上記実施の形態に係る塗布処理装置１においては、基板Ｗの下面Ｓ２にリンス液を供給するために４つの下面ノズル１７が設けられるが、本発明はこれに限定されない。基板Ｗの下面Ｓ２にリンス液を供給する下面ノズル１７は、１つであってもよいし、２つであってもよいし、３つであってもよい。あるいは、下面ノズル１７の数は５以上であってもよい。 (5) Although the coating treatment apparatus 1 according to the above embodiment is provided with four bottom surface nozzles 17 for supplying the rinse liquid to the bottom surface S2 of the substrate W, the present invention is not limited to this. The number of bottom surface nozzles 17 that supply the rinse liquid to the bottom surface S2 of the substrate W may be one, two, or three. Alternatively, the number of bottom surface nozzles 17 may be five or more.

（６）上記実施の形態に係る塗布処理装置１においては、塗布液として基板Ｗにレジスト液Ｒ１が供給されるが、本発明はこれに限定されない。塗布処理装置１においては、反射防止膜用の塗布液が基板Ｗに供給されてもよい。あるいは、塗布処理装置１においては、ＳＯＣ（Spin On Glass）膜、ＳＯＧ（Spin On Glass）膜またはＳｉＡＲＣ（Si-rich Anti Reflective Coating）膜用の塗布液が基板Ｗに供給されてもよい。 (6) In the coating processing apparatus 1 according to the above embodiment, the resist liquid R1 is supplied to the substrate W as the coating liquid, but the present invention is not limited to this. In the coating processing apparatus 1, the substrate W may be supplied with the coating liquid for the antireflection film. Alternatively, in the coating processing apparatus 1, the substrate W may be supplied with a coating liquid for an SOC (Spin On Glass) film, SOG (Spin On Glass) film, or SiARC (Si-rich Anti-Reflective Coating) film.

（７）上記実施の形態では、液膜乾燥工程の中間時点は、液膜乾燥工程の開始時点よりも後で、基板Ｗの中央領域上のレジスト液Ｒ１が乾燥しかつ円環領域上に存在するレジスト液Ｒ１が流動する状態にある期間内となるように定められるが、本発明はこれに限定されない。液膜乾燥工程の中間時点は、上記の期間に限らず、液膜乾燥工程の開始時点以降でかつ終了時点よりも前に定められればよい。 (7) In the above embodiment, the intermediate point of the liquid film drying process is after the start point of the liquid film drying process, and the resist solution R1 on the central region of the substrate W is dried and is present on the annular region. However, the present invention is not limited to this period. The intermediate point of the liquid film drying process is not limited to the period described above, and may be set after the start point of the liquid film drying process and before the end point.

［８］請求項の各構成要素と実施の形態の各要素との対応関係
以下、請求項の各構成要素と実施の形態の各要素との対応の例について説明する。上記実施の形態では、レジスト膜Ｒ２が塗布膜の例であり、塗布処理装置１が塗布処理装置の例であり、上面Ｓ１が第１の面の例であり、下面Ｓ２が第２の面の例であり、リム部ＳＲが凸部の例であり、回転保持装置１０が回転保持部の例であり、レジスト液Ｒ１が塗布液の例であり、液供給装置２０が塗布液供給部の例であり、制御部３０が制御部の例であり、下面ノズル１７およびリンス液供給系１８がリンス液供給部の例である。 [8] Correspondence Relationship Between Each Component of Claims and Each Element of Embodiment An example of correspondence between each component of a claim and each element of an embodiment will be described below. In the above embodiments, the resist film R2 is an example of the coating film, the coating treatment apparatus 1 is an example of the coating treatment apparatus, the upper surface S1 is an example of the first surface, and the lower surface S2 is an example of the second surface. The rim portion SR is an example of a convex portion, the rotation holding device 10 is an example of a rotation holding portion, the resist liquid R1 is an example of a coating liquid, and the liquid supply device 20 is an example of a coating liquid supply section. , the control unit 30 is an example of the control unit, and the bottom nozzle 17 and the rinse liquid supply system 18 are examples of the rinse liquid supply unit.

また、液膜乾燥工程の開始時点（図６の時点ｔ８）が第１の時点の例であり、液膜乾燥工程の中間時点（図６の時点ｔ９）が第２の時点の例であり、液膜乾燥工程の終了時点（図６の時点ｔ１０）が第３の時点の例であり、液膜乾燥工程における基板Ｗの回転速度ｓ５が第１の回転速度の例であり、液膜乾燥工程における基板Ｗの回転速度ｓ６が第２の回転速度の例であり、バックリンス工程における基板Ｗの回転速度ｓ８が第３の回転速度の例である。請求項の各構成要素として、請求項に記載されている構成または機能を有する他の種々の要素を用いることもできる。 In addition, the start time of the liquid film drying process (time t8 in FIG. 6) is an example of the first time, and the middle time of the liquid film drying process (time t9 in FIG. 6) is an example of the second time, The end point of the liquid film drying process (time t10 in FIG. 6) is an example of the third time point, and the rotation speed s5 of the substrate W in the liquid film drying process is an example of the first rotation speed. is an example of the second rotation speed, and the rotation speed s8 of the substrate W in the back rinse step is an example of the third rotation speed. Various other elements having the structure or function described in the claims can be used as each component of the claims.

１…塗布処理装置，１０…回転保持装置，１１…吸着保持部，１１ｕ，Ｓ１…上面，１２…回転軸，１３…回転駆動部，１４…吸引装置，１５…カップ，１５ｄ…ドレイン，１５ｘ…底部，１５ｙ…外周壁部，１６…排液案内管，１７…下面ノズル，１７ｂ…液吐出口，１８…リンス液供給系，２０…液供給装置，２１…レジストノズル，２２…塗布液供給系，２３…溶剤ノズル，２４…溶剤供給系，３０…制御部，ｈ…吸引孔，ＩＡ…内側領域，ｐ１，ｐ２…期間，Ｒ１…レジスト液，Ｒ２…レジスト膜，Ｓ２…下面，ＳＲ…リム部，ＳＴ…段差，ｖｐ…吸気経路，Ｗ…基板，Ｗ１…実施例基板，Ｗ２…比較例基板 DESCRIPTION OF SYMBOLS 1... Coating processing apparatus, 10... Rotation holding apparatus, 11... Suction holding part, 11u, S1... Top surface, 12... Rotating shaft, 13... Rotation drive part, 14... Suction device, 15... Cup, 15d... Drain, 15x... Bottom portion 15y Peripheral wall portion 16 Drain guide pipe 17 Bottom nozzle 17b Liquid discharge port 18 Rinse liquid supply system 20 Liquid supply device 21 Resist nozzle 22 Coating liquid supply system , 23... Solvent nozzle, 24... Solvent supply system, 30... Control section, h... Suction hole, IA... Inner area, p1, p2... Period, R1... Resist liquid, R2... Resist film, S2... Lower surface, SR... Rim Part, ST... Step, vp... Intake path, W... Substrate, W1... Example substrate, W2... Comparative example substrate

Claims (10)

少なくとも一部が円形状の外周部を有する基板に塗布膜を形成する塗布処理方法であって、
前記基板は、互いに逆方向を向く第１の面および第２の面を有し、
前記第１の面には、当該第１の面に直交する方向に突出しかつ前記外周部に沿って延びる円環状の凸部が形成され、
前記塗布処理方法は、
前記第１の面が上方を向くように前記基板を水平姿勢で保持するステップと、
前記第１の面に塗布液を供給し、塗布液の供給中または供給後に水平姿勢で保持された前記基板を鉛直軸の周りで回転させることにより当該第１の面全体に塗布液を広げるステップと、
前記塗布液を広げるステップの後、水平姿勢で保持された前記基板を鉛直軸の周りで回転させることにより前記基板を乾燥させるステップとを含み、
前記基板を乾燥させるステップは、
第１の時点から前記第１の時点よりも後の第２の時点までの間、第１の回転速度で前記基板を回転させることと、
前記第２の時点から前記第２の時点よりも後の第３の時点までの間、前記第１の回転速度よりも高い第２の回転速度で前記基板を回転させることとを含む、塗布処理方法。 A coating treatment method for forming a coating film on a substrate having an outer peripheral portion that is at least partially circular,
the substrate has a first surface and a second surface facing in opposite directions;
The first surface is formed with an annular protrusion projecting in a direction orthogonal to the first surface and extending along the outer peripheral portion,
The coating treatment method is
holding the substrate in a horizontal position such that the first surface faces upward;
A step of supplying a coating liquid to the first surface and spreading the coating liquid over the entire first surface by rotating the substrate held in a horizontal posture about a vertical axis during or after the supply of the coating liquid. When,
After the step of spreading the coating liquid, drying the substrate by rotating the substrate held in a horizontal position around a vertical axis;
Drying the substrate comprises:
rotating the substrate at a first rotational speed from a first time point to a second time point after the first time point;
rotating the substrate at a second rotation speed higher than the first rotation speed from the second time point to a third time point after the second time point. Method. 前記基板を乾燥させるステップの後、前記第１の回転速度よりも低い第３の回転速度で前記基板を回転させつつ、前記第２の面にリンス液を供給するステップをさらに含む、請求項１記載の塗布処理方法。 2. After drying the substrate, further comprising supplying a rinse liquid to the second surface while rotating the substrate at a third rotation speed lower than the first rotation speed. The described coating treatment method. 前記第２の時点は、前記第１の面上に広げられた塗布液のうち前記第１の面の中央領域に存在する部分が乾燥しかつ前記第１の面の前記中央領域を取り囲む領域上に存在する部分が流動する状態にある期間内となるように定められる、請求項１または２記載の塗布処理方法。 At the second point of time, a portion of the coating liquid spread on the first surface, which is present in the central region of the first surface, is dry and above the region surrounding the central region of the first surface. 3. The coating treatment method according to claim 1 or 2, wherein the period of time during which the portion existing in the liquid state is in a state of fluidity. 前記第２の時点は、前記第１の時点経過後前記第１の面に供給された塗布液の表面に発生する干渉縞が消滅するよりも前の時点に定められる、請求項１～３のいずれか一項に記載の塗布処理方法。 4. The method according to any one of claims 1 to 3, wherein said second point in time is set at a point in time before disappearance of interference fringes generated on the surface of said coating liquid supplied to said first surface after said first point in time. The coating treatment method according to any one of the items. 前記第２の回転速度は、前記第１の回転速度の２倍の回転速度よりも高い、請求項１～４のいずれか一項に記載の塗布処理方法。 The coating treatment method according to any one of claims 1 to 4, wherein the second rotation speed is higher than twice the first rotation speed. 少なくとも一部が円形状の外周部を有する基板に塗布膜を形成する塗布処理装置であって、
前記基板は、互いに逆方向を向く第１の面および第２の面を有し、
前記第１の面には、当該第１の面に直交する方向に突出しかつ前記外周部に沿って延びる円環状の凸部が形成され、
前記塗布処理装置は、
前記第１の面が上方を向くように前記基板を水平姿勢で保持しつつ鉛直軸の周りで回転させる回転保持部と、
前記第１の面に塗布液を供給する塗布液供給部と、
前記第１の面に塗布液が供給されるように前記塗布液供給部を制御し、塗布液の供給中または供給後に水平姿勢で保持された前記基板が前記鉛直軸の周りで回転することにより当該第１の面全体に塗布液が広がるように前記回転保持部を制御する制御部とを備え、
前記制御部は、
前記第１の面全体に塗布液が広げられた後、第１の時点から前記第１の時点よりも後の第２の時点までの間、水平姿勢で保持された前記基板が第１の回転速度で回転し、前記第２の時点から前記第２の時点よりも後の第３の時点までの間、水平姿勢で保持された前記基板が前記第１の回転速度よりも高い第２の回転速度で回転することにより前記基板が乾燥するように前記回転保持部をさらに制御する、塗布処理装置。 A coating treatment apparatus for forming a coating film on a substrate having an outer peripheral portion at least partially circular,
the substrate has a first surface and a second surface facing in opposite directions;
The first surface is formed with an annular protrusion projecting in a direction orthogonal to the first surface and extending along the outer peripheral portion,
The coating processing apparatus is
a rotation holding unit that holds the substrate in a horizontal position so that the first surface faces upward and rotates the substrate around a vertical axis;
a coating liquid supply unit that supplies a coating liquid to the first surface;
By controlling the coating liquid supply unit so that the coating liquid is supplied to the first surface, and rotating the substrate held in a horizontal posture about the vertical axis during or after the coating liquid is supplied. a control unit that controls the rotation holding unit so that the coating liquid spreads over the entire first surface;
The control unit
After the coating liquid is spread over the entire first surface, the substrate held in a horizontal posture undergoes a first rotation from a first point of time to a second point of time after the first point of time. a second rotation at which the substrate is rotated at a higher speed than the first rotation speed and held in a horizontal posture from the second time point to a third time point after the second time point; A coating processing apparatus further controlling the spin holder to dry the substrate by rotating at a speed. 前記第２の面にリンス液を供給するリンス液供給部をさらに備え、
前記制御部は、前記基板が前記第２の回転速度で回転することにより乾燥した後、前記第１の回転速度よりも低い第３の回転速度で前記基板が回転するように前記回転保持部をさらに制御するとともに、前記第３の回転速度で回転する前記基板の前記第２の面にリンス液が供給されるように前記リンス液供給部をさらに制御する、請求項６記載の塗布処理装置。 further comprising a rinse liquid supply unit that supplies a rinse liquid to the second surface;
After the substrate is dried by rotating at the second rotation speed, the control unit controls the rotation holding unit so that the substrate rotates at a third rotation speed lower than the first rotation speed. 7. The coating processing apparatus according to claim 6, further controlling said rinse solution supply unit so as to supply said second surface of said substrate rotating at said third rotation speed with said rinse solution. 前記第２の時点は、前記第１の面上に広げられた塗布液のうち前記第１の面の中央領域に存在する部分が乾燥しかつ前記第１の面の前記中央領域を取り囲む領域上に存在する部分が流動する状態にある期間内となるように定められる、請求項６または７記載の塗布処理装置。 At the second point of time, a portion of the coating liquid spread on the first surface, which is present in the central region of the first surface, is dry and above the region surrounding the central region of the first surface. 8. The coating processing apparatus according to claim 6 or 7, which is determined to be within a period in which the portion existing in the liquid state is in a state of fluidity. 前記第２の時点は、前記第１の時点経過後前記第１の面に供給された塗布液の表面に発生する干渉縞が消滅するよりも前の時点に定められる、請求項６～８のいずれか一項に記載の塗布処理装置。 9. The method according to any one of claims 6 to 8, wherein said second point in time is set at a point in time before disappearance of interference fringes generated on the surface of said coating liquid supplied to said first surface after said first point in time. The coating processing apparatus according to any one of the items. 前記第２の回転速度は、前記第１の回転速度の２倍の回転速度よりも高い、請求項６～９のいずれか一項に記載の塗布処理装置。 The coating treatment apparatus according to any one of claims 6 to 9, wherein the second rotation speed is higher than twice the first rotation speed.
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