TW202232656A - 靜電卡盤、及形成靜電卡盤之方法 - Google Patents

靜電卡盤、及形成靜電卡盤之方法 Download PDF

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TW202232656A
TW202232656A TW111100161A TW111100161A TW202232656A TW 202232656 A TW202232656 A TW 202232656A TW 111100161 A TW111100161 A TW 111100161A TW 111100161 A TW111100161 A TW 111100161A TW 202232656 A TW202232656 A TW 202232656A
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electrostatic chuck
ceramic
interface
interface layer
group
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TW111100161A
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桑蒂蘭 瓦昆 阿吉拉爾
宏 高
相克 庫塔斯
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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Abstract

所揭示者係靜電卡盤及形成靜電卡盤之方法。例示性靜電卡盤包括一陶瓷本體、嵌入此陶瓷本體內的一裝置、及形成為上覆於此裝置的一界面層。例示性方法包括：在一模具內提供陶瓷前驅物材料，提供一裝置，用一界面材料塗佈此裝置以形成一經塗佈裝置，將此經塗佈裝置放置於此陶瓷前驅物材料之上或之內，及燒結此陶瓷前驅物材料以形成靜電卡盤以及介於此裝置與此燒結步驟期間所形成的陶瓷材料之間的一界面層。

Description

靜電卡盤
本揭露大致上係關於基板支撐件。更特定地，本揭露係關於適用於支撐基板之靜電卡盤，及關於形成此等卡盤之方法。
靜電卡盤可用於裝置形成期間的各式應用。例如，可於下列處理期間：微影（lithography），諸如極紫外光微影（extreme ultraviolet lithography，EUVL）；基於電漿及/或基於真空的處理，諸如乾式蝕刻、電漿增強化學氣相沉積（plasma enhanced chemical vapor deposition，PECVD）、熱化學氣相沉積（thermal chemical vapor deposition）、物理氣相沉積（physical vapor deposition，PVD）、離子植入（ion implantation）、及類似者，使用靜電卡盤來保持基板（諸如晶圓）。在此類製程期間溫度可以是相對高（例如，約800 °C），及/或在此類製程期間的溫度循環可以是相對高（例如，約800 °C）。
典型的靜電卡盤可包括陶瓷本體、嵌入本體中的一或多個電極（例如，靜電和射頻（RF）電極）、以及嵌入本體內的一加熱元件或複數個加熱元件。陶瓷本體、加熱元件及電極可由具有不同熱膨脹係數之不同材料形成。
在基板處理期間，卡盤的高溫及/或溫度變化結合熱膨脹係數之差異可導致材料（諸如本體、電極或導線）的機械疲勞。機械疲勞可繼而造成本體、加熱元件及/或電極內的裂縫，縮短靜電卡盤的壽命。據此，想要的者係改良的卡盤及形成此等卡盤之方法。
本節提出之任何討論，包括問題及解決方案的討論，僅為了提供本揭露背景脈絡之目的而包括在本揭露中。此類討論不應視為承認任何或全部資訊在完成本揭露時為已知或以其他方式構成先前技術。
本揭露之各種實施例係關於靜電卡盤及形成靜電卡盤之方法。雖然下文更詳細討論本揭露之各種實施例應對先前卡盤及方法之缺點的方式，但大致上，例示性卡盤包括一界面層以減輕在卡盤的溫度循環期間原本可能發生的卡盤損壞（諸如裂縫）。亦描述形成改良卡盤之方法。額外或替代地，相較於不包括此界面層的一靜電卡盤之體積膨脹，此界面層可降低陶瓷本體隨溫度（例如，在約1 °C至約800 °C的範圍中）的體積膨脹。
依據本揭露之實例，提供一靜電卡盤。此靜電卡盤包括一陶瓷本體、嵌入於此陶瓷本體內的一加熱元件及/或一或多個電極（例如，一第一電極及一第二電極，諸如靜電電極及射頻電極），可選地一介電層、及一界面層，此界面層形成為上覆於此加熱元件及/或此一或多個電極，及/或形成在此陶瓷本體與此介電層之間，其中此界面層可與此陶瓷本體形成一固體溶液（solid solution）。此靜電卡盤亦可適當地包括流體通道，以允許一流體被循環通過此陶瓷本體之多個部分及/或流體儲槽或通道。此介電層可介於此加熱元件與一或多個電極之間。此陶瓷本體可包括氮化鋁、氮化硼、碳化矽、及硝酸矽中之一或多者。在一些情況中，此陶瓷本體可包括多至約1 ppm至100 ppm或約1重量百分比至30重量百分比的一添加劑，諸如選自由Al 2MgO 4、Al 2O 3、Y 2O 3、MgO、CaF 2及LiF中之一或多者所組成之群組的一添加劑。此加熱元件可以是或可包括鉬或其合金，此等合金包含從約1原子百分比（at %）至約50原子百分比或鎢及/或矽。此一或多個電極可由例如鉬所形成，在一些情況中，此鉬可用例如金及/或鉑塗佈。此界面層（例如，形成在加熱元件上方及/或一電極上方及/或介於一介電層與此陶瓷本體之間）可包括例如一（例如，陶瓷）化合物，此化合物包含選自由Mg、Ca、Mn、Al、Ba、Be、Zr、Co、Zn及Cr所組成之群組的一金屬，以及氧、氮、碳、及磷中之一或多者。此界面層可額外包括選自由CaO、MnO、MgO、AlON、BaO、BeO、ZrO 2、CoO、ZnO、Cr 2O 3、及Al 2O 3中之一或多者所組成群組的一添加劑。
依據本揭露之額外的實施例，提供一種形成一靜電卡盤之方法。一例示性方法包括：在一模具內提供陶瓷前驅物材料，提供一加熱元件及/或一或多個電極，用一界面材料塗佈此加熱元件及/或一或多個電極以形成一經塗佈加熱元件及/或經塗佈電極，將此經塗佈加熱元件及或電極放置在此陶瓷前驅物材料之上或之內，以及燒結（sintering）此陶瓷前驅物材料，以形成此靜電卡盤。在塗佈此加熱元件及/或電極以外或作為其替代，還可提供一介電層並用此界面材料對其塗佈。依據此等實施例的實例，此界面材料形成一介於此加熱元件、電極、及介電層與此燒結步驟期間所形成的陶瓷材料之間的一界面層。此提供陶瓷前驅物材料的步驟可包括提供氮化鋁、氮化硼、碳化矽、及硝酸矽粉末中之一或多者。例示性方法可更包括一步驟：在此燒結步驟之前提供一或多個添加劑到此模具。此一或多個添加劑可選自由Al 2MgO 4、Al 2O 3、Y 2O 3、MgO、CaF 2、LiF及類似者所組成之群組。此燒結步驟可包括具施加單軸向壓力的一典型燒結，或火花電漿燒結。此塗佈步驟可包括例如下列中之一或多者：物理氣相沉積；電化學沉積；在一擠出製程期間在此加熱元件及/或電極之一表面上施加此界面材料或界面金屬；沉積一金屬及後續在一爐中的氧化、氮化及/或磷化；一氣相沉積製程，諸如化學氣相沉積及/或原子層沉積。舉特定實例而言，此加熱元件及/或電極可包括鉬及鎢，且此界面材料可包括選自由Mg、Ca、Mn、Al、Ba、Be、Zr、Co、Zn、Cr所組成之群組的一金屬，以及氧、氮、氟化物及磷酸鹽中之一或多者。
此等及其他實施例對所屬技術領域中具有通常知識者而言，將因參照隨附圖式之某些實施例的下列詳細描述而變得顯而易見；本揭露並未受限於任何所揭示的任何特定實施例。
雖然下文揭示了某些實施例及實例，所屬技術領域中具有通常知識者將理解的是，本揭露係延伸超出本揭露具體揭示的實施例及/或用途及其明顯修改與等義物。因此，意欲使所揭示之本揭露的範疇不應受下文所描述之特定揭示實施例的限制。
本揭露大致上係關於靜電卡盤及形成靜電卡盤之方法。如本文中所描述的卡盤及方法可用以處理基板，以形成例如電子裝置。舉實例而言，卡盤可用於晶圓製程中，諸如微影，例如極紫外光微影（EUVL）；基於電漿及/或基於真空的處理，諸如乾式蝕刻、電漿增強蝕刻、電漿增強化學氣相沉積（PECVD）、熱化學氣相沉積、物理氣相沉積（PVD）、離子植入、及類似者，用以形成電子裝置。
在本揭露中，「氣體（gas）」可包括在常溫常壓下為氣體、汽化固體及/或汽化液體的材料，並取決於上下文可由單一氣體或多個氣體之混合物構成。
如本文中所使用，用語「基板（substrate）」可指可用以形成或在其上可形成裝置、電路、或膜之任何下伏材料。基板可包括塊材（諸如矽（例如單晶矽））、其他第四族（Group IV）材料（諸如鍺）、或化合物半導體材料（諸如第三族/第五族（Group III-V）或第二族/第六族（Group II-VI）半導體），並可包括上覆（overlying）或下伏（underlying）於塊材的一或多層。進一步言，基板可包括各種形貌，諸如形成在基板之一層的至少一部分之內或之上的凹部（recesses）、線（lines）、及類似者。
在一些實施例中，「薄膜（film）」或「塗層（coating）」係指一沿著與厚度方向垂直之方向（例如，連續地）延伸之層。一塗層或層可由具有某些特性的一離散（discrete）單一膜或層、或多個膜或層所構成，且相鄰膜或層之間的一邊界可以或可以不明確，且可以是基於或不基於此等相鄰膜或層之物理、化學及/或任何其他特性、形成製程或順序、及/或功能或目的而建立。
進一步言，在本揭露中，由於可工作範圍可基於例行工作判定，變數之任兩個數字可構成變數之可工作範圍，且任何所指示範圍可包括或排除端點。額外地，所指示的變量之任何數值（不管此等數值是否以「約」來指示）可指精確值或近似值並包括等效值，且在一些實施例中可指平均值、中間值、代表值、多數值等。進一步言，在本揭露中，於一些實施例中，用語「包括（including）」、「由……構成（constituted by）」、及「具有（having）」可獨立地指「典型或廣泛地包含（typically or broadly comprising）」、「包含（comprising）」、「基本上由……組成（consisting essentially of）」、或「由……組成（consisting of）」。在本揭露中，任何已定義之意義不必然排除一些實施例中的尋常及慣例意義。
現轉向圖式，第1圖繪示例示性反應器系統100。反應器系統100可用於各種應用，諸如例如化學氣相沉積（chemical vapor deposition，CVD）、電漿增強化學氣相沉積 （plasma-enhanced CVD，PECVD）、原子層沉積（atomic layer deposition，ALD）、清潔製程（clean processes）、蝕刻製程（etch processes）、及類似者。其他系統可用於微影或離子植入。雖然例示性實施例在下文係連同氣體相反應器系統描述，但除非另外陳述，否則實施例及本揭露並未如此受限。
在所繪示之實例中，反應器系統100包括可選的基板處置系統102、反應室104、氣體注入系統106、及設置於反應室104與基板處置系統102之間的可選的壁108。系統100亦包括支撐一或多個基板或晶圓120之靜電卡盤116。靜電卡盤116可包括一或多個經嵌入的裝置118，諸如一或多個加熱元件及/或一或多個電極及形成於一或多個裝置118上方的界面層122。系統100亦可適當包括第一氣體源112、第二氣體源114、及排氣源110。雖然被繪示為具兩個氣體源112、114，反應器系統100可包括任何適當數目的氣體源。進一步言，反應器系統100可包括任何適當數目的反應室104，其可各自耦接至氣體注入系統106。在反應器系統100包括多個反應室的情況中，各氣體注入系統可耦接至相同氣體源112、114或不同氣體源。
第2圖繪示適用於作為靜電卡盤116使用的靜電卡盤200。靜電卡盤200包括陶瓷本體202、嵌入陶瓷本體202內的一或多個加熱元件204、一或多個電極206及208、介電層210、及流體腔體212。如所繪示，一或多個氣體供應214、電源供應器216及220、及流體218可通過陶瓷軸222供應至靜電卡盤200。如下文更詳細論述，靜電卡盤200亦包括一或多個界面層226至232，此一或多個界面層可減輕在處理期間原本可能引發的靜電卡盤200內之機械疲勞及/或缺陷，例如，因靜電卡盤200的使用。
陶瓷本體202可由陶瓷材料形成。舉實例而言，陶瓷本體202可包括氮化鋁、氮化硼、碳化矽、及硝酸矽中之一或多者。陶瓷本體202可額外包括選自例如由Al 2MgO 4、Al 2O 3、Y 2O 3、MgO、CaF 2及LiF中之一或多者所組成之群組的添加劑。
加熱元件204可由電阻加熱材料形成。舉實例而言，一或多個加熱元件可由鉬、鎢、鉬合金及鎢合金中之一或多者形成，諸如Mo、W、Mo XW y、MoSi X及/或WSi X中之一或多者，其中x及y大於0且小於1，或介於約0.1與約0.5之間。在一些情況中，合金可包括Mo及/或W，以及多至50原子百分比的另一元素（諸如矽）或Mo及W中之另一者。加熱元件204可呈導線或類似者的形式。
電極206、208可由適當的導電材料形成。例如，電極206、208可由金屬（諸如鉬）或合金（諸如上文所描述之鉬合金）形成。金屬或合金可塗佈有一層207。層207可由例如金或鉑形成。如所繪示，冷卻流體224可在一或多個電極206、208內提供，以促進電極206、208及靜電卡盤200之溫度調節。
介電層210可由適當的介電材料（諸如陶瓷材料）形成。相較於陶瓷本體202材料之介電電阻率，用以形成介電層210之陶瓷材料可包括一具有較高介電電阻率的介電材料。舉實例而言，介電層210可以是或可包括AlN、Si 3N 4、SiC、BN，可選地具有一或多個添加劑，此一或多個添加劑選自由CaO、MnO、MgO、AlON、BaO、BeO、ZrO 2、CoO、ZnO、Cr 2O 3及Al 2O 3所組成之群組；介電層可在燒結製程期間形成。
流體腔體212可在模製及燒結製程期間形成，且可包括形成於陶瓷本體202內的空隙或多孔區域。諸如Ar、N 2或CO之氣體可存在於流體腔體212內。
如上文所提及，靜電卡盤200可包括一或多個界面層226至232。依據本揭露之實例，界面層226至232中之一或多者與陶瓷本體202形成固體溶液。
在所繪示之實例中，界面層226可形成為上覆於一或多個（例如全部）加熱元件204。界面層226可包括陶瓷化合物，其包含選自由Mg、Ca、Mn、Al、Ba、Be、Zr、Co、Zn、Cr所組成之群組的一金屬，以及氧、氮、碳及磷中之一或多者。舉特定實例而言，界面層可以是或可包括單獨的或具有添加劑的MgO。例示性添加劑包括CaO、MnO、MgO、AlON、BaO、BeO、ZrO 2、CoO、ZnO、Cr 2O 3及Al 2O 3及類似者中之一或多者。
有利地，包括MgO（例如，由MgO組成或基本上由MgO組成）的界面層關於由其他陶瓷材料（諸如AlN）所形成的界面層可大約展現約30%的體積膨脹之降低。鑑於本揭露，本領域技術人員將瞭解，界面層之體積膨脹的降低將降低給定溫度下的裂縫發展可能性。鑑於本揭露，本領域技術人員亦將瞭解，界面層之體積膨脹的降低亦提高了可採用具有此界面層之加熱器的製程之溫度。
可形成關於電極206、208之界面層228、230。界面層228、230可由上文連同界面層226所描述之材料中之任何者形成。類似地，可關於介電層210形成界面層232。界面層232可由上文連同界面層226所描述之材料中之任何者形成。界面層226至232中之任何者的厚度之範圍可從約1奈米（nm）至10奈米至約1微米（µm）至50微米，或約1毫米（mm）至約5毫米。
現轉向第3圖，繪示依據本揭露之實施例之形成靜電卡盤的方法300。方法300包括下列步驟：提供陶瓷前驅物（302），提供裝置（304），用界面材料塗佈裝置，以形成經塗佈裝置（306），將經塗佈裝置放置於陶瓷前驅物材料之上或之內（308）；及燒結陶瓷前驅物材料，以形成靜電卡盤（310）。界面材料可形成介於裝置與在燒結步驟期間所形成的陶瓷材料之間的界面層，諸如界面層226、228、230、及/或232。
步驟302可包括提供一或多個前驅物，諸如氮化鋁、氮化硼、碳化矽、及硝酸矽粉末中之一或多者。在一些情況中，步驟302可額外包括提供一或多個添加劑至模具，諸如Al 2MgO 4、Al 2O 3、Y 2O 3、MgO、CaF 2、及LiF中之一或多者。
步驟304可包括提供裝置。例示性裝置包括加熱元件（諸如加熱元件204）、電極（諸如電極206、208）、及介電層（諸如介電層210）。
步驟304期間所提供的裝置中之一或多者可用界面材料塗佈，以在步驟306期間形成經塗佈裝置。此等裝置中之此一或多者可用上文連同界面層226至232所提及的界面層中之任何者塗佈。
步驟306期間之塗佈可使用多種技術進行。例如，步驟306可包括材料的物理氣相沉積；材料的電化學沉積；在擠出製程期間於裝置表面上施加材料；使用氣相沉積製程，諸如化學氣相沉積或循環沉積製程，諸如原子層沉積。所沉積之材料可包括界面材料或在爐中經受氧化、氮化及/或磷化氛圍之金屬。由界面材料形成的界面層可包括選自由Mg、Ca、Mn、Al、Ba、Be、Zr、Co、Zn、Cr所組成之群組的一金屬，以及氧、氮、氟化物及磷酸鹽中之一或多者。
一旦裝置已塗佈，在步驟308期間可將經塗佈裝置放置於一包括陶瓷前驅物材料的模具內。舉實例而言，在步驟308期間可在模具中放置經塗佈電極、經塗佈加熱元件、及/或經塗佈介電層。
在步驟310期間，陶瓷本體藉由燒結形成。燒結可在約1300 °C至約1900 °C之溫度、約1每平方英寸磅力（PSI）至約500每平方英寸磅力之壓力、及約15分鐘至約數天之時間下發生。界面層可在步驟310期間形成。界面層可以是陶瓷。在一些情況中，可在步驟310期間使用火花燒結製程（spark sintering process）。
上文所描述之本揭露實例實施例並未限制本揭露的範疇，因為此等實施例僅為本揭露之實施例的實例。任何等效實施例均意欲屬於本揭露之範疇。實際上，除本文中所示及所描述者以外，所屬技術領域中具有通常知識者還可由本說明書明白本揭露之各種修改，諸如所述元件（例如步驟）之替代可用組合。此類修改及實施例亦意欲落在隨附之申請專利範圍的範疇內。
100:反應器系統 102:基板處置系統 104:反應室 106:氣體注入系統 108:壁 110:排氣源 112:氣體源 114:氣體源 116:靜電卡盤 118:裝置 120:晶圓 122:界面層 200:靜電卡盤 202:陶瓷本體 204:加熱元件 206:電極 207:層 208:電極 210:介電層 212:流體腔體 214:氣體供應 216:電源供應器 218:流體 220:電源供應器 222:陶瓷軸 224:冷卻流體 226,228,230,232:界面層 300:方法 302:步驟 304:步驟 306:步驟 308:步驟 310:步驟
當連同下列闡釋性圖式思考時，可藉由參照實施方式及申請專利範圍而衍生對本揭露之例示性實施例的更完整理解。 第1圖繪示依據本揭露之實例的包括靜電卡盤的系統。 第2圖更詳細地繪示依據本揭露之至少一實施例的系統的一部分和一靜電卡盤。 第3圖繪示依據本揭露之至少一實施例之方法。
應瞭解，圖式中的元件是為了簡化和清楚而繪示，且不必然按比例繪出。舉例而言，圖式中之一些元件的尺寸可能相對於其他元件而特別放大，以幫助改善對所繪示本揭露實施例的理解。
120:晶圓
202:陶瓷本體
204:加熱元件
206:電極
207:層
208:電極
210:介電層
212:流體腔體
214:氣體供應
216:電源供應器
218:流體
220:電源供應器
222:陶瓷軸
224:冷卻流體
226,228,230,232:界面層

Claims (20)

  1. 一種靜電卡盤，包括： 一陶瓷本體； 一裝置，嵌入該陶瓷本體內；以及 一界面層，經形成為上覆於該裝置，其中該界面層與該陶瓷本體形成一固體溶液。
  2. 如請求項1之靜電卡盤，其中該陶瓷本體包括氮化鋁、氮化硼、碳化矽、及硝酸矽中之一或多者。
  3. 如請求項1之靜電卡盤，其中該陶瓷本體包括一添加劑，且該添加劑選自由Al 2MgO 4、Al 2O 3、Y 2O 3、MgO、CaF 2、及LiF中之一或多者所組成之群組。
  4. 如請求項1中任一項之靜電卡盤，其中該裝置包括一加熱元件，該加熱元件包括鉬、鎢、Mo XW y、MoSi X、及WSi X中之一或多者。
  5. 如請求項1中任一項之靜電卡盤，其中該裝置包括一加熱元件，該加熱元件包括一導線。
  6. 如請求項5之靜電卡盤，其中該加熱元件包括一鉬合金或一鎢合金。
  7. 如請求項6之靜電卡盤，其中該鉬合金包括鉬以及約1原子百分比至約50原子百分比的選自由W及Si所組成之群組的一元素。
  8. 如請求項1中任一項之靜電卡盤，其中相較於不包括該界面層的一靜電卡盤，該界面層降低該陶瓷本體隨溫度（例如，在約1 °C至約800 °C的範圍中）的體積膨脹。
  9. 如請求項1中任一項之靜電卡盤，其中該界面層包括一陶瓷化合物，該陶瓷化合物包括選自由Mg、Ca、Mn、Al、Ba、Be、Zr、Co、Zn、Cr所組成之群組的一金屬，以及氧、氮、碳及磷中之一或多者。
  10. 如請求項9之靜電卡盤，其中該界面層更包括一添加劑，該添加劑選自由CaO、MnO、MgO、AlON、BaO、BeO、ZrO 2、CoO、ZnO、Cr 2O 3及Al 2O 3所組成之群組。
  11. 一種形成一靜電卡盤之方法，該方法包括下列步驟： 在一模具內提供陶瓷前驅物材料； 提供一裝置； 用一界面材料塗佈該裝置，以形成一經塗佈裝置； 將該經塗佈裝置放置於該陶瓷前驅物材料之上或之內；以及 燒結該陶瓷前驅物材料，以形成該靜電卡盤， 其中該界面材料在介於該裝置與該燒結步驟期間所形成的陶瓷材料之間形成一界面層。
  12. 如請求項11之方法，其中提供陶瓷前驅物材料之該步驟包括提供氮化鋁、氮化硼、碳化矽、及硝酸矽粉末中之一或多者。
  13. 如請求項11所述之方法，更包括下列之一步驟：提供選自由Al 2MgO 4、Al 2O 3、Y 2O 3、MgO、CaF 2、LiF所組成之群組的一添加劑到該模具。
  14. 如請求項11之任一項之方法，其中燒結之該步驟包括火花電漿燒結。
  15. 如請求項11之任一項之方法，其中塗佈之該步驟包括物理氣相沉積（PVD）及/或化學氣相沉積（CVD）。
  16. 如請求項11之任一項之方法，其中塗佈之該步驟包括電化學沉積。
  17. 如請求項11之任一項之方法，其中塗佈之該步驟包括在一擠出製程期間，將該界面材料或一界面金屬施加於該裝置之一表面上。
  18. 如請求項11中任一項之方法，其中塗佈之該步驟包括沉積一金屬及後續在一爐中的氧化、氮化及/或磷化。
  19. 如請求項11之任一項之方法，其中塗佈之該步驟包括一氣體相沉積製程。
  20. 如請求項11之任一項之方法，其中該裝置包括鉬及鎢中之一或多者，且其中該界面材料包括選自由Mg、Ca、Mn、Al、Ba、Be、Zr、Co、Zn、Cr所組成之群組的一金屬，以及氧、氮、氟化物及磷酸鹽中之一或多者。
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