TW202216437A - Electrostatic chuck and plasma processing device thereof capable of reducing the mechanical stress inside the electrostatic chuck and effectively avoiding the phenomenon of thermal mismatch in the electrostatic chuck - Google Patents

Electrostatic chuck and plasma processing device thereof capable of reducing the mechanical stress inside the electrostatic chuck and effectively avoiding the phenomenon of thermal mismatch in the electrostatic chuck Download PDF

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TW202216437A
TW202216437A TW110129046A TW110129046A TW202216437A TW 202216437 A TW202216437 A TW 202216437A TW 110129046 A TW110129046 A TW 110129046A TW 110129046 A TW110129046 A TW 110129046A TW 202216437 A TW202216437 A TW 202216437A
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metal layer
electrostatic chuck
thermal expansion
base
expansion coefficient
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TWI795861B (en
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國民 黃
趙函一
狄 吳
圖強 倪
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大陸商中微半導體設備(上海)股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

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  • Physics & Mathematics (AREA)
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  • Chemical & Material Sciences (AREA)
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Abstract

The present invention discloses an electrostatic chuck, including an electrostatic adsorption layer and a base located under the electrostatic adsorption layer. The electrostatic adsorption layer is made of a ceramic material. The base includes a first metal layer close to the electrostatic adsorption layer, and a second metal layer below the first metal layer. The thermal expansion coefficient of the first metal layer is greater than the thermal expansion coefficient of the electrostatic adsorption layer, and less than or equal to the thermal expansion coefficient of the second metal layer. The thermal expansion coefficient of the first metal layer is less than 15×10<SP> -6</SP>/K. The present invention solves the problem of the conventional electrostatic chuck which is easily damaged by mechanical stress by selecting special materials having thermal expansion coefficients similar to that of the electrostatic adsorption layer for the ESC base, thereby reducing the mechanical stress inside the electrostatic chuck and effectively avoiding the phenomenon of thermal mismatch in the electrostatic chuck.

Description

靜電夾盤及其等離子體處理裝置Electrostatic chuck and plasma processing device thereof

本發明涉及半導體技術領域,具體涉及一種靜電夾盤及其等離子體處理裝置。The invention relates to the technical field of semiconductors, in particular to an electrostatic chuck and a plasma processing device thereof.

在半導體技術領域中,等離子體刻蝕是半導體製程中最重要的技術之一。等離子體刻蝕藉由將光刻製程的圖形層上圖案(pattern)刻蝕轉移至基底材料上,是化學作用或者物理作用,或者物理輔助的化學刻蝕來實現掩膜到基底材料的圖形複製。In the field of semiconductor technology, plasma etching is one of the most important technologies in semiconductor manufacturing. Plasma etching transfers the pattern on the pattern layer of the photolithography process to the base material, which is chemical or physical, or physical-assisted chemical etching to achieve pattern replication from the mask to the base material .

其中,靜電夾盤(ESC)是等離子體刻蝕製程中最關鍵的部件之一。半導體技術的發展和應用的多樣化,要求ESC能夠適應更寬的溫度範圍、更高的功率、更高的電壓以及更寬的射頻頻率範圍等條件。Among them, the electrostatic chuck (ESC) is one of the most critical components in the plasma etching process. The development of semiconductor technology and the diversification of applications require ESCs to adapt to conditions such as wider temperature range, higher power, higher voltage and wider RF frequency range.

然而,這些苛刻的條件使得ESC內部的機械應力和電子應力大大增加,則對產生的應力不進行合適的處理,將會導致ESC的損壞。例如,ESC在低溫或高溫下由於從鍵合溫度或室溫到應用溫度的溫差很大,這容易導致ESC的基底和靜電吸附層之間出現熱力嚴重不匹配的現象,繼而導致靜電吸附層破裂。同時,ESC的損壞將會直接導致等離子體刻蝕裝置發生故障。However, these harsh conditions greatly increase the mechanical stress and electronic stress inside the ESC. If the generated stress is not properly treated, the ESC will be damaged. For example, at low or high temperature, the ESC has a large temperature difference from the bonding temperature or room temperature to the application temperature, which easily leads to a serious thermal mismatch between the substrate and the electrostatic adsorption layer of the ESC, which in turn leads to the rupture of the electrostatic adsorption layer. . Meanwhile, the damage of the ESC will directly lead to the failure of the plasma etching apparatus.

本發明的目的是提供一種靜電夾盤及其等離子處理裝置,以解决傳統靜電夾盤中易產生機械應力導致損壞的問題,選擇ESC基座與靜電吸附層具有相似熱膨脹係數的特殊材料,可以減小ESC內部機械應力的產生,有效避免ESC中熱力不匹配的現象。The purpose of the present invention is to provide an electrostatic chuck and a plasma processing device thereof, so as to solve the problem that mechanical stress is easy to cause damage in the traditional electrostatic chuck. Selecting special materials with similar thermal expansion coefficients for the ESC base and the electrostatic adsorption layer can reduce the The generation of mechanical stress inside the small ESC can effectively avoid the phenomenon of thermal mismatch in the ESC.

為達到上述目的,本發明提供了一種靜電夾盤,包括靜電吸附層和位於靜電吸附層下方的基座,靜電吸附層為陶瓷材料,基座包括靠近靜電吸附層的第一金屬層和位於第一金屬層下方的第二金屬層,第一金屬層的熱膨脹係數大於靜電吸附層的熱膨脹係數,小於等於第二金屬層的熱膨脹係數,第一金屬層的熱膨脹係數小於15×10 -6/K。 In order to achieve the above object, the present invention provides an electrostatic chuck, which includes an electrostatic adsorption layer and a base located under the electrostatic adsorption layer, the electrostatic adsorption layer is made of ceramic material, and the base includes a first metal layer close to the electrostatic adsorption layer and A second metal layer under a metal layer, the thermal expansion coefficient of the first metal layer is greater than the thermal expansion coefficient of the electrostatic adsorption layer, and less than or equal to the thermal expansion coefficient of the second metal layer, and the thermal expansion coefficient of the first metal layer is less than 15×10 -6 /K .

上述的靜電夾盤,其中,基座還包括第三金屬層,設置於第二金屬層下方,第三金屬層的熱膨脹係數大於或等於第二金屬層的熱膨脹係數。In the above electrostatic chuck, the base further includes a third metal layer disposed under the second metal layer, and the thermal expansion coefficient of the third metal layer is greater than or equal to the thermal expansion coefficient of the second metal layer.

上述的靜電夾盤,其中,第一金屬層的材料為鉿、鉬、銠、鉈、鈦、鎢、鋯、哈氏合金、蒙乃爾合金中的至少一種或鉿、鉬、銠、鉈、鈦、鎢、鋯的各個金屬合金中的至少一種。The above-mentioned electrostatic chuck, wherein, the material of the first metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, Hastelloy, Monel alloy or hafnium, molybdenum, rhodium, thallium, titanium , at least one of the respective metal alloys of tungsten and zirconium.

上述的靜電夾盤,其中,第二金屬層的材料為鉿、鉬、銠、鉈、鈦、鎢、鋯、哈氏合金、蒙乃爾合金中的至少一種或鉿、鉬、銠、鉈、鈦、鎢、鋯的各個金屬合金中的至少一種。The above-mentioned electrostatic chuck, wherein, the material of the second metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, Hastelloy, Monel alloy or hafnium, molybdenum, rhodium, thallium, titanium , at least one of the respective metal alloys of tungsten and zirconium.

上述的靜電夾盤,其中,第三金屬層的材料為鉿、鉬、銠、鉈、鈦、鎢、鋯、哈氏合金、蒙乃爾合金中的至少一種或鉿、鉬、銠、鉈、鈦、鎢、鋯的各個金屬合金中的至少一種。Above-mentioned electrostatic chuck, wherein, the material of the third metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, Hastelloy, Monel alloy or hafnium, molybdenum, rhodium, thallium, titanium , at least one of the respective metal alloys of tungsten and zirconium.

上述的靜電夾盤,其中,第一金屬層的熱膨脹係數小於等於靜電吸附層熱膨脹係數的1.3倍。In the above electrostatic chuck, the thermal expansion coefficient of the first metal layer is less than or equal to 1.3 times the thermal expansion coefficient of the electrostatic adsorption layer.

上述的靜電夾盤,其中,靜電夾盤的工作環境溫度為50℃至-180℃。In the above electrostatic chuck, the working environment temperature of the electrostatic chuck is 50°C to -180°C.

上述的靜電夾盤,其中,靜電夾盤的工作環境溫度為0℃至300℃。In the above electrostatic chuck, the working environment temperature of the electrostatic chuck is 0°C to 300°C.

上述的靜電夾盤,其中,第一金屬層和第二金屬層的側壁表面塗覆陶瓷塗層。In the above electrostatic chuck, the sidewall surfaces of the first metal layer and the second metal layer are coated with a ceramic coating.

上述的靜電夾盤,其中,基座內部設置有冷却通道,冷却通道位於第一金屬層內或第二金屬層內或第一金屬層與第二金屬層之間。In the above electrostatic chuck, a cooling channel is arranged inside the base, and the cooling channel is located in the first metal layer or the second metal layer or between the first metal layer and the second metal layer.

上述的靜電夾盤,其中,冷却通道內設置鰭式結構,鰭式結構為第一金屬層和/或第二金屬層向冷却通道內延伸的凸起,凸起用於增大基座與冷却液的接觸面積,進而增大基座的熱傳導。The above electrostatic chuck, wherein a fin structure is arranged in the cooling channel, and the fin structure is a protrusion extending from the first metal layer and/or the second metal layer into the cooling channel, and the protrusion is used to increase the base and the cooling liquid. the contact area, thereby increasing the heat conduction of the base.

上述的靜電夾盤,其中,每條冷却通道內部的鰭式結構的個數至少為一個。In the above electrostatic chuck, the number of fin structures inside each cooling channel is at least one.

上述的靜電夾盤,其中,鰭式結構設置於冷却通道的底部。In the above electrostatic chuck, the fin structure is arranged at the bottom of the cooling channel.

上述的靜電夾盤,其中,鰭式結構設置於冷却通道的頂端。In the above electrostatic chuck, the fin structure is arranged on the top of the cooling channel.

上述的靜電夾盤,其中,鰭式結構的橫截面為矩形。In the above electrostatic chuck, the cross section of the fin structure is rectangular.

上述的靜電夾盤,其中,鰭式結構的橫截面為波紋狀。In the above electrostatic chuck, the cross section of the fin structure is corrugated.

上述的靜電夾盤,其中,靜電吸附層和所述基座之間藉由黏結層黏合在一起。In the above electrostatic chuck, the electrostatic adsorption layer and the base are bonded together by an adhesive layer.

本發明還提供了一種等離子體處理裝置,所述等離子體處理裝置包括上述的靜電夾盤。The present invention also provides a plasma processing device, the plasma processing device comprising the above electrostatic chuck.

運用此發明,解决了傳統靜電夾盤中易產生機械應力導致損壞的問題,選擇ESC基座與靜電吸附層具有相似熱膨脹係數的特殊材料,減小了靜電夾盤內部機械應力的產生,有效地避免了靜電夾盤中熱力不匹配的現象。Using this invention, the problem of damage caused by mechanical stress in the traditional electrostatic chuck is solved, and special materials with similar thermal expansion coefficients for the ESC base and the electrostatic adsorption layer are selected to reduce the internal mechanical stress of the electrostatic chuck and effectively. The thermal mismatch in the electrostatic chuck is avoided.

相對於習知技術,本發明具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:

1、本發明提供的靜電夾盤,採用不同熱膨脹係數的多層金屬堆疊成基座,控制了相鄰金屬層之間熱膨脹係數不匹配而引起的機械應力,減少了翹曲,也避免了翹曲導致的平整度、平行度等力學性能不規範的現象,提高了靜電夾盤的安全係數。1. The electrostatic chuck provided by the present invention adopts multi-layer metals with different thermal expansion coefficients to be stacked into a base, which controls the mechanical stress caused by the mismatch of thermal expansion coefficients between adjacent metal layers, reduces warping, and avoids warping. The resulting irregularities in mechanical properties such as flatness and parallelism improve the safety factor of the electrostatic chuck.

2、本發明提供的靜電夾盤,藉由設置靠近陶瓷靜電吸附層的基座的第一金屬層材料熱膨脹係數與靜電吸附層的熱膨脹係數接近,使得靜電夾盤能夠適應溫差較大的工作環境,避免由於不同材料的熱脹冷縮幅度相差過大造成靜電夾盤的破裂。2. In the electrostatic chuck provided by the present invention, the thermal expansion coefficient of the material of the first metal layer near the base of the ceramic electrostatic adsorption layer is close to the thermal expansion coefficient of the electrostatic adsorption layer, so that the electrostatic chuck can adapt to the working environment with large temperature difference , to avoid the rupture of the electrostatic chuck due to the large difference between the thermal expansion and contraction of different materials.

3、本發明提供的靜電夾盤,在冷却通道內部設置向內延伸的鰭式凸起結構,有效增大了基座與冷却液的接觸面積,提高了基座的熱傳導效率。3. The electrostatic chuck provided by the present invention is provided with an inwardly extending fin-shaped convex structure inside the cooling channel, which effectively increases the contact area between the base and the cooling liquid and improves the heat conduction efficiency of the base.

4、本發明提供的靜電夾盤,採用不同的金屬材質堆疊為基座,能夠有效節省製作基座的材料成本,大大簡化了基座的製作製程。4. The electrostatic chuck provided by the present invention uses different metal materials stacked as the base, which can effectively save the material cost of making the base and greatly simplify the manufacturing process of the base.

以下結合附圖藉由具體實施例對本發明作進一步的描述,這些實施例僅用於說明本發明,並不是對本發明保護範圍的限制。The present invention will be further described below by means of specific embodiments in conjunction with the accompanying drawings. These embodiments are only used to illustrate the present invention and not to limit the protection scope of the present invention.

靜電夾盤是真空處理設備中非常重要的部件,其用於承載待處理基片w,並在處理過程中對反應腔內的電場、溫度等參數進行調節。目前,隨著集成電路的製程發展,靜電夾盤的溫度調節範圍越來越大,例如,在超低溫刻蝕製程中,靜電夾盤的工作溫度可達零下150度,甚至為零下180度,這與靜電夾盤工作之前的溫度和儲存時的常溫相比,溫差超過兩百度。The electrostatic chuck is a very important part in the vacuum processing equipment, which is used to carry the substrate w to be processed, and adjust parameters such as electric field and temperature in the reaction chamber during the processing. At present, with the development of the integrated circuit process, the temperature adjustment range of the electrostatic chuck is getting wider and wider. For example, in the ultra-low temperature etching process, the working temperature of the electrostatic chuck can reach minus 150 degrees, or even minus 180 degrees. Compared with the temperature before the electrostatic chuck works and the normal temperature during storage, the temperature difference is more than two hundred degrees.

本發明是一種靜電夾盤,參照如第1圖所示,包括由介電材料形成的靜電吸附層1和金屬基座2,由於介電材料和鋁金屬材料的熱膨脹係數不同,因此,這種大溫差工作環境對靜電夾盤的安全提出了很高的要求。The present invention is an electrostatic chuck, as shown in FIG. 1, including an electrostatic adsorption layer 1 and a metal base 2 formed of a dielectric material. Since the thermal expansion coefficients of the dielectric material and the aluminum metal material are different, this kind of The large temperature difference working environment puts forward high requirements for the safety of the electrostatic chuck.

其中,靜電吸附層1上方用於承載待處理基片w;基座2位於靜電吸附層1的下方。靜電吸附層1為陶瓷材料;在本實施例中,靜電吸附層1的陶瓷材料為氧化鋁或氮化鋁;在另一實施例中,靜電吸附層1的陶瓷材料為藍寶石、氧化釔、氧化鋯、碳化矽、氮化矽或碳化鎢中的至少一種;這些陶瓷材料的選擇與該靜電夾盤的應用環境和化學性質有關。The top of the electrostatic adsorption layer 1 is used to carry the substrate w to be processed; the base 2 is located under the electrostatic adsorption layer 1 . The electrostatic adsorption layer 1 is a ceramic material; in this embodiment, the ceramic material of the electrostatic adsorption layer 1 is aluminum oxide or aluminum nitride; in another embodiment, the ceramic material of the electrostatic adsorption layer 1 is sapphire, yttrium oxide, oxide At least one of zirconium, silicon carbide, silicon nitride or tungsten carbide; the selection of these ceramic materials is related to the application environment and chemical properties of the electrostatic chuck.

參照如第1圖所示,基座2包括靠近靜電吸附層1的第一金屬層201和位於第一金屬層201下方的第二金屬層202,第一金屬層201的熱膨脹係數大於靜電吸附層1的熱膨脹係數,小於等於第二金屬層202的熱膨脹係數,第一金屬層201的熱膨脹係數小於15×10 -6/K,基座2採用不同熱膨脹係數的金屬材料堆疊而成,降低了基座2的材料成本,簡化了製作製程。 Referring to FIG. 1, the base 2 includes a first metal layer 201 close to the electrostatic adsorption layer 1 and a second metal layer 202 under the first metal layer 201. The thermal expansion coefficient of the first metal layer 201 is greater than that of the electrostatic adsorption layer. The thermal expansion coefficient of 1 is less than or equal to the thermal expansion coefficient of the second metal layer 202, the thermal expansion coefficient of the first metal layer 201 is less than 15×10 -6 /K, and the base 2 is made of metal materials with different thermal expansion coefficients. The material cost of the seat 2 simplifies the manufacturing process.

可選的,基座2還包括第三金屬層203,設置於第二金屬層202下方,第三金屬層203的熱膨脹係數大於或等於第二金屬層202的熱膨脹係數。Optionally, the base 2 further includes a third metal layer 203 disposed under the second metal layer 202 , and the thermal expansion coefficient of the third metal layer 203 is greater than or equal to that of the second metal layer 202 .

由於基座2靠近靜電吸附層1的第一金屬層201的熱膨脹係數大於靜電吸附層1的熱膨脹係數,且小於第二金屬層202的熱膨脹係數,因此能夠有效控制相鄰材料層之間由熱膨脹係數不匹配而引起的機械應力,減少了基座2的翹曲,也避免了基座2發生翹曲導致的基座2平整度、平行度等力學性能不規範的現象,從而提高了靜電夾盤的安全係數。Since the thermal expansion coefficient of the first metal layer 201 of the base 2 close to the electrostatic adsorption layer 1 is greater than that of the electrostatic adsorption layer 1 and smaller than the thermal expansion coefficient of the second metal layer 202 , the thermal expansion coefficient between adjacent material layers can be effectively controlled. The mechanical stress caused by the mismatch of coefficients reduces the warpage of the base 2, and also avoids the irregularity of the mechanical properties such as the flatness and parallelism of the base 2 caused by the warping of the base 2, thereby improving the electrostatic clamp. safety factor of the disc.

在本實施例中,靜電夾盤的工作環境溫度為-180℃至50℃;在另一實施例中,靜電夾盤的工作環境溫度為0℃至300℃。In this embodiment, the working environment temperature of the electrostatic chuck is -180°C to 50°C; in another embodiment, the working environment temperature of the electrostatic chuck is 0°C to 300°C.

由於基座2需要連接射頻電源,耦合射頻信號至反應腔內,因此基座2的材料通常選擇金屬材料。本發明中,為了使得第一金屬層201與靜電吸附層1的陶瓷材料熱膨脹係數接近,可選的,第一金屬層201的熱膨脹係數小於等於靜電吸附層1熱膨脹係數的1.3倍,設置第一金屬層201的熱膨脹係數小於15×10 -6/K。 Since the base 2 needs to be connected to a radio frequency power supply to couple the radio frequency signal into the reaction chamber, the material of the base 2 is usually a metal material. In the present invention, in order to make the thermal expansion coefficient of the first metal layer 201 and the ceramic material of the electrostatic adsorption layer 1 close, optionally, the thermal expansion coefficient of the first metal layer 201 is less than or equal to 1.3 times the thermal expansion coefficient of the electrostatic adsorption layer 1, and the first The thermal expansion coefficient of the metal layer 201 is less than 15×10 −6 /K.

其中,第一金屬層201的材料為銅(Cu)、鉿(Hf)、鉬(Mo)、銠(Rh)、鉈(Ta)、鈦(Ti)、鎢(W)、鋯(Zr)、藍寶石、釔鋁石榴石(YAG)、碳化矽合金(Al-SiC)、哈氏合金(Hastelloy)、304/316型號的不銹鋼(SS)、蒙乃爾合金(Monel)中的至少一種或鉿(Hf)、鉬(Mo)、銠(Rh)、鉈(Ta)、鈦(Ti)、鎢(W)、鋯(Zr)的各個金屬合金中的至少一種。The material of the first metal layer 201 is copper (Cu), hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium (Zr), At least one of sapphire, yttrium aluminum garnet (YAG), silicon carbide alloy (Al-SiC), Hastelloy, stainless steel (SS) of type 304/316, Monel, or hafnium (Hf ), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), and zirconium (Zr) at least one of the respective metal alloys.

第二金屬層202的材料為鋁(Al)、銅(Cu)、鉿(Hf)、鉬(Mo)、銠(Rh)、鉈(Ta)、鈦(Ti)、鎢(W)、鋯(Zr)、藍寶石、釔鋁石榴石(YAG)和碳化矽合金(Al-SiC)、哈氏合金(Hastelloy)、304/316型號的不銹鋼(SS)、蒙乃爾合金(Monel)中的一種或鉿(Hf)、鉬(Mo)、銠(Rh)、鉈(Ta)、鈦(Ti)、鎢(W)、鋯(Zr)的各個金屬合金中的至少一種。在選擇基座的材料時,要保證第一金屬層的熱膨脹係數小於第二金屬層的熱膨脹係數。The material of the second metal layer 202 is aluminum (Al), copper (Cu), hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium ( Zr), sapphire, yttrium aluminum garnet (YAG) and one of silicon carbide alloys (Al-SiC), Hastelloy, stainless steel (SS) type 304/316, Monel, or hafnium At least one of metal alloys of (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), and zirconium (Zr). When selecting the material of the base, it should be ensured that the thermal expansion coefficient of the first metal layer is smaller than that of the second metal layer.

第三金屬層203的材料為鉿(Hf)、鉬(Mo)、銠(Rh)、鉈(Ta)、鈦(Ti)、鎢(W)、鋯(Zr)、哈氏合金(Hastelloy)、蒙乃爾合金(Monel)中的至少一種或鉿(Hf)、鉬(Mo)、銠(Rh)、鉈(Ta)、鈦(Ti)、鎢(W)、鋯(Zr)的各個金屬合金中的至少一種。The material of the third metal layer 203 is hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium (Zr), Hastelloy, At least one of Monel alloy (Monel) or each metal alloy of hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium (Zr) at least one of.

在本實施例1中,第一金屬層201和第二金屬層202的材料為鉿、鉬、銠、鉈、鈦、鎢、鋯中的一種或多種。In Embodiment 1, the materials of the first metal layer 201 and the second metal layer 202 are one or more of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, and zirconium.

在另一實施例2中,第一金屬層201和第二金屬層202的材料為鉿、鉬、銠、鉈、鈦、鎢、鋯的各個金屬合金中的一種或多種。In another embodiment 2, the materials of the first metal layer 201 and the second metal layer 202 are one or more of various metal alloys of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, and zirconium.

在另一實施例3中,第一金屬層201和第二金屬層202的材料為哈氏合金、蒙乃爾合金(Monel)中的一種或兩種。In another embodiment 3, the materials of the first metal layer 201 and the second metal layer 202 are one or both of Hastelloy and Monel.

上述這些具有不同熱膨脹係數和熱導率的金屬材料能夠有效適應靜電夾盤在低溫(工作環境溫度為-180℃至50℃)或高溫(工作環境溫度為0℃至200℃)的工作環境。The above metal materials with different thermal expansion coefficients and thermal conductivity can effectively adapt to the working environment of the electrostatic chuck at low temperature (working environment temperature is -180°C to 50°C) or high temperature (working environment temperature is 0°C to 200°C).

靜電夾盤在等離子刻蝕製程中,放置於等離子體反應腔內部用於夾緊待處理基片w,而在刻蝕工作期間,靜電夾盤的側壁裸露在等離子體氣源的表面,容易受到等離子體氣源的刻蝕或者化學氣體的腐蝕,因此,參照如第1圖所示,第一金屬層201和第二金屬層202的側壁表面塗覆陶瓷塗層,以保護靜電夾盤的側壁免受化學氣體的腐蝕以及電弧放電,由於第一金屬層201與陶瓷材料熱膨脹係數接近,在第一金屬層201的側壁表面塗覆陶瓷塗層後,即便靜電夾盤的溫度發生較大的變化,第一金屬層201也不會與陶瓷塗層發生較大的形變,導致陶瓷塗層破碎脫落,而且,由於第一金屬層201更加靠近等離子體環境,可以有效避免側壁陶瓷塗層脫落可能產生的等離子體轟擊風險。In the plasma etching process, the electrostatic chuck is placed inside the plasma reaction chamber to clamp the substrate to be processed w. During the etching process, the sidewall of the electrostatic chuck is exposed on the surface of the plasma gas source, which is easily affected by the plasma. The etching of the plasma gas source or the corrosion of the chemical gas, therefore, as shown in FIG. 1, the sidewall surfaces of the first metal layer 201 and the second metal layer 202 are coated with ceramic coatings to protect the sidewalls of the electrostatic chuck It is protected from chemical gas corrosion and arc discharge. Since the thermal expansion coefficient of the first metal layer 201 is close to that of the ceramic material, after the ceramic coating is applied to the side wall surface of the first metal layer 201, even if the temperature of the electrostatic chuck changes greatly , the first metal layer 201 will not be greatly deformed with the ceramic coating, which will cause the ceramic coating to break and fall off. Moreover, because the first metal layer 201 is closer to the plasma environment, it can effectively prevent the sidewall ceramic coating from falling off. risk of plasma bombardment.

參照如第1圖所示,基座2內部設置有冷却通道4,用於在冷却通道4內部通入冷却液,以冷却基座2;且冷却通道4位於第一金屬層201內或第二金屬層202內或貫穿第一金屬層201與第二金屬層202。基座2的材料在選取時除了要考慮熱膨脹係數,還要考慮熱傳導係數,在上文描述的熱膨脹係數由上至下逐漸增加的前提下,可以根據不同製程對溫度的傳導速率的要求選擇適合的熱傳導係數的材料。例如,當需要對靜電夾盤的溫度快速調節的製程中,可以在上文列出的材料中選擇熱傳導係數較高的基座2第一金屬層201和/或第二金屬層202的材質,當需要緩慢調節靜電夾盤的溫度時,可以上文列出的材料中選擇熱傳導係數較低的基座第一金屬層201和/或第二金屬層202的材質。Referring to FIG. 1, a cooling channel 4 is provided inside the base 2 for passing cooling liquid into the cooling channel 4 to cool the base 2; and the cooling channel 4 is located in the first metal layer 201 or the second The metal layer 202 is in or through the first metal layer 201 and the second metal layer 202 . When selecting the material of the base 2, in addition to the thermal expansion coefficient, the thermal conductivity coefficient should also be considered. Under the premise that the thermal expansion coefficient described above gradually increases from top to bottom, it can be selected according to the requirements of different processes on the temperature conductivity rate. the thermal conductivity of the material. For example, in the process of rapidly adjusting the temperature of the electrostatic chuck, the material of the first metal layer 201 and/or the second metal layer 202 of the base 2 with higher thermal conductivity can be selected from the materials listed above, When the temperature of the electrostatic chuck needs to be adjusted slowly, the material of the first metal layer 201 and/or the second metal layer 202 of the base with lower thermal conductivity may be selected from the materials listed above.

參照如第2圖所示,為了提高基座2的溫度調節速度,冷却通道4內設置鰭式結構5,鰭式結構5為第一金屬層201和/或第二金屬層202向冷却通道4內延伸的凸起;其中,藉由在冷却通道4內部設置鰭式結構5來增大冷却通道4內部的冷却液與基座2的接觸面積,從而增大基座2的熱傳導。其中,每條冷却通道4內部的鰭式結構5的個數至少為一個。Referring to FIG. 2 , in order to improve the temperature adjustment speed of the base 2 , the cooling channel 4 is provided with a fin structure 5 . Inwardly extending protrusions; wherein, the fin structure 5 is arranged inside the cooling channel 4 to increase the contact area between the cooling liquid inside the cooling channel 4 and the base 2 , thereby increasing the heat conduction of the base 2 . Wherein, the number of fin structures 5 inside each cooling channel 4 is at least one.

在本實施例1中,參照如第2圖所示,冷却通道4位於基座2內部的第二金屬層202內,鰭式結構5設置於冷却通道4的底部,鰭式結構的橫截面為矩形。In Embodiment 1, as shown in FIG. 2 , the cooling channel 4 is located in the second metal layer 202 inside the base 2 , the fin structure 5 is arranged at the bottom of the cooling channel 4 , and the cross section of the fin structure is rectangle.

在另一實施例2中,參照如第3圖所示,冷却通道4位於基座2內部的第一金屬層201內,且鰭式結構5設置於冷却通道4的底端,鰭式結構5的橫截面為波紋狀,用於增大基座2與冷却液的接觸面積,進而增大基座2的熱傳導速率。In another embodiment 2, as shown in FIG. 3, the cooling channel 4 is located in the first metal layer 201 inside the base 2, and the fin structure 5 is disposed at the bottom end of the cooling channel 4, and the fin structure 5 The cross section is corrugated, which is used to increase the contact area between the base 2 and the cooling liquid, thereby increasing the heat conduction rate of the base 2 .

在另一實施例3中,參照如第4圖所示,冷却通道4貫穿基座2內部的第一金屬層201和第二金屬層202,增大冷却通道4的設置面積,能夠有效增大基座2與冷却通道4內部冷却液的接觸面積,進而增大基座2的熱傳導。In another embodiment 3, as shown in FIG. 4 , the cooling channel 4 penetrates the first metal layer 201 and the second metal layer 202 inside the base 2 , increasing the installation area of the cooling channel 4 , which can effectively increase the size of the cooling channel 4 . The contact area between the base 2 and the cooling liquid inside the cooling channel 4 further increases the heat conduction of the base 2 .

在其他的實施例中,如果基座2包括超過兩層的金屬層,冷却通道4也可以設置於第一金屬層201和第二金屬層202以外的其他金屬層內,對應的,鰭式結構5設置冷却通道4下方和/或上方的金屬層上。In other embodiments, if the base 2 includes more than two metal layers, the cooling channel 4 can also be disposed in other metal layers other than the first metal layer 201 and the second metal layer 202, correspondingly, the fin structure 5. Provide cooling channels 4 on the metal layer below and/or above.

參照如第4圖所示,鰭式結構5設置於冷却通道4的底端,鰭式結構5的橫截面為波紋狀,用於增大基座2與冷却液的接觸面積,進而增大基座2的熱傳導。Referring to Fig. 4, the fin structure 5 is arranged at the bottom end of the cooling channel 4, and the cross section of the fin structure 5 is corrugated, which is used to increase the contact area between the base 2 and the cooling liquid, thereby increasing the base Heat conduction of seat 2.

鰭式結構5可以有多種變形,例如,可以只在基座2的中心區域或外圍區域的冷却通道4內設置部分鰭式結構5,以實現局部區域的溫度快速傳導;或者,在另外的實施例中,部分鰭式結構5與位於冷却通道4上方的金屬層連接,部分鰭式結構5與位於與冷却通道4下方的金屬層連接,以實現不同的熱傳導效果。The fin structure 5 can have various deformations, for example, only part of the fin structure 5 can be arranged in the cooling channel 4 in the central area or the peripheral area of the base 2 to achieve rapid temperature conduction in the local area; or, in another implementation In an example, some of the fin structures 5 are connected to the metal layer above the cooling channel 4 , and some of the fin structures 5 are connected to the metal layer below the cooling channel 4 to achieve different heat conduction effects.

本發明還提供了一種等離子體處理裝置,參照如第5圖所示,該等離子體處理裝置包括反應腔6、等離子體氣源7、射頻(RF)電源8以及上述的靜電夾盤;等離子體氣源7設置於反應腔6上方,用於向反應腔6內部通入等離子體;靜電夾盤設置於反應腔6內部,且靜電夾盤的靜電吸附層1中嵌入電極,用於刻蝕製程過程中施加電流時,夾緊待處理基片w;射頻電源8與靜電夾盤的金屬基座2連接,藉由導電的金屬基座2將射頻電源傳輸至反應腔6中;靜電吸附層1和基座2之間黏結層3黏合在一起。The present invention also provides a plasma processing device, as shown in FIG. 5, the plasma processing device includes a reaction chamber 6, a plasma gas source 7, a radio frequency (RF) power supply 8 and the above-mentioned electrostatic chuck; The gas source 7 is arranged above the reaction chamber 6 and is used to pass plasma into the reaction chamber 6; the electrostatic chuck is arranged inside the reaction chamber 6, and electrodes are embedded in the electrostatic adsorption layer 1 of the electrostatic chuck for the etching process When current is applied in the process, the substrate w to be processed is clamped; the radio frequency power supply 8 is connected to the metal base 2 of the electrostatic chuck, and the radio frequency power supply is transmitted to the reaction chamber 6 through the conductive metal base 2; the electrostatic adsorption layer 1 The adhesive layer 3 is bonded together with the base 2 .

其中,靜電夾盤內部設置有氦氣通道9,氦氣通道9藉由基座2延伸至靜電吸附層1與待處理基片w之間,用於等離子體刻蝕過程中,通入氦氣作用於待處理基片w的背面,以加快了待處理基片w與靜電吸附層1之間的熱傳導,從而控制了待處理基片w的溫度。靜電夾盤中的基座2內部設置的冷却通道4,藉由與冷却液熱交換,以實現控制基座2的溫度。The inside of the electrostatic chuck is provided with a helium gas channel 9, and the helium gas channel 9 extends between the electrostatic adsorption layer 1 and the substrate w to be processed through the base 2, and is used for introducing helium gas during the plasma etching process. It acts on the backside of the substrate w to be processed to speed up the heat conduction between the substrate w to be processed and the electrostatic adsorption layer 1 , thereby controlling the temperature of the substrate w to be processed. The cooling channel 4 disposed inside the base 2 in the electrostatic chuck can control the temperature of the base 2 by exchanging heat with the cooling liquid.

本發明的工作原理:The working principle of the present invention:

一種靜電夾盤包括靜電吸附層和位於靜電吸附層下方的基座;基座包括靠近靜電吸附層的第一金屬層、位於第一金屬層下方的第二金屬層、以及設置於第二金屬層下方的第三金屬層,第一金屬層的熱膨脹係數大於靜電吸附層的熱膨脹係數,小於等於第二金屬層的熱膨脹係數,第一金屬層的熱膨脹係數小於15×10 -6/K;第三金屬層的熱膨脹係數大於或等於第二金屬層的熱膨脹係數,有效控制相鄰金屬層之間熱膨脹係數不匹配而引起的機械應力,提高靜電夾盤的安全係數;基座內部設置有冷却通道;冷却通道內設置鰭式結構,鰭式結構為第一金屬層和/或第二金屬層向冷却通道內延伸的凸起,用於增大基座與冷却液的接觸面積,進而增大基座的熱傳導。 An electrostatic chuck includes an electrostatic adsorption layer and a base located under the electrostatic adsorption layer; the base includes a first metal layer close to the electrostatic adsorption layer, a second metal layer located under the first metal layer, and a second metal layer disposed on the second metal layer The third metal layer below, the thermal expansion coefficient of the first metal layer is greater than the thermal expansion coefficient of the electrostatic adsorption layer, and less than or equal to the thermal expansion coefficient of the second metal layer, and the thermal expansion coefficient of the first metal layer is less than 15×10 -6 /K; The thermal expansion coefficient of the metal layer is greater than or equal to the thermal expansion coefficient of the second metal layer, which effectively controls the mechanical stress caused by the mismatch of thermal expansion coefficients between adjacent metal layers, and improves the safety factor of the electrostatic chuck; the base is provided with a cooling channel; A fin structure is arranged in the cooling channel, and the fin structure is a protrusion extending from the first metal layer and/or the second metal layer into the cooling channel, which is used to increase the contact area between the base and the cooling liquid, thereby increasing the base of heat conduction.

綜上所述,本發明一種靜電夾盤及其等離子體處理裝置,解决了傳統靜電夾盤中易產生機械應力導致損壞的問題,選擇ESC基座與靜電吸附層具有相似熱膨脹係數的特殊材料,減小了靜電夾盤內部機械應力的產生,有效地避免了靜電夾盤中熱力不匹配的現象,尤其適用於製程溫差較大的等離子體處理裝置。To sum up, an electrostatic chuck and a plasma treatment device thereof of the present invention solve the problem of damage caused by mechanical stress in the traditional electrostatic chuck, and select special materials with similar thermal expansion coefficients for the ESC base and the electrostatic adsorption layer. The internal mechanical stress of the electrostatic chuck is reduced, the phenomenon of thermal mismatch in the electrostatic chuck is effectively avoided, and it is especially suitable for a plasma treatment device with a large process temperature difference.

儘管本發明的內容已經藉由上述較佳實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。While the content of the present invention has been described in detail by way of the above preferred embodiments, it should be appreciated that the above description should not be construed as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those skilled in the art upon reading the foregoing. Therefore, the protection scope of the present invention should be defined by the appended claims.

1:靜電吸附層 2:基座 3:黏結層 4:冷却通道 5:鰭式結構 6:反應腔 7:等離子體氣源 8:射頻電源 9:氦氣通道 201:第一金屬層 202:第二金屬層 203:第三金屬層 w:待處理基片 1: Electrostatic adsorption layer 2: Base 3: Adhesive layer 4: Cooling channel 5: Fin structure 6: Reaction chamber 7: Plasma gas source 8: RF power supply 9: Helium channel 201: First metal layer 202: Second metal layer 203: Third metal layer w: substrate to be processed

第1圖為本發明提供的本實施例1中靜電夾盤的結構示意圖; 第2圖為本發明提供的本實施例1中冷却通道和鰭式結構的截面示意圖; 第3圖為本發明提供的另一實施例2中冷却通道和鰭式結構的截面示意圖; 第4圖為本發明提供的另一實施例3中冷却通道和鰭式結構的截面示意圖; 第5圖為本發明提供的等離子體處理裝置的結構示意圖。 Figure 1 is a schematic structural diagram of the electrostatic chuck in Embodiment 1 provided by the present invention; FIG. 2 is a schematic cross-sectional view of the cooling channel and the fin structure in Embodiment 1 provided by the present invention; FIG. 3 is a schematic cross-sectional view of a cooling channel and a fin structure in another embodiment 2 provided by the present invention; FIG. 4 is a schematic cross-sectional view of the cooling channel and the fin structure in another embodiment 3 provided by the present invention; FIG. 5 is a schematic structural diagram of the plasma processing apparatus provided by the present invention.

1:靜電吸附層 1: Electrostatic adsorption layer

2:基座 2: Base

4:冷却通道 4: Cooling channel

201:第一金屬層 201: First metal layer

202:第二金屬層 202: Second metal layer

203:第三金屬層 203: Third metal layer

w:待處理基片 w: substrate to be processed

Claims (18)

一種靜電夾盤,包括一靜電吸附層和位於該靜電吸附層下方的一基座,其特徵在於,該靜電吸附層為陶瓷材料,該基座包括靠近該靜電吸附層的一第一金屬層和位於該第一金屬層下方的一第二金屬層,該第一金屬層的熱膨脹係數大於該靜電吸附層的熱膨脹係數,小於等於該第二金屬層的熱膨脹係數,該第一金屬層的熱膨脹係數小於15×10 -6/K。 An electrostatic chuck, comprising an electrostatic adsorption layer and a base located under the electrostatic adsorption layer, characterized in that the electrostatic adsorption layer is a ceramic material, and the base includes a first metal layer close to the electrostatic adsorption layer and A second metal layer located under the first metal layer, the thermal expansion coefficient of the first metal layer is greater than the thermal expansion coefficient of the electrostatic adsorption layer, less than or equal to the thermal expansion coefficient of the second metal layer, the thermal expansion coefficient of the first metal layer less than 15×10 -6 /K. 如請求項1所述的靜電夾盤,其中,該基座還包括一第三金屬層,設置於該第二金屬層下方,該第三金屬層的熱膨脹係數大於或等於該第二金屬層的熱膨脹係數The electrostatic chuck according to claim 1, wherein the base further comprises a third metal layer disposed under the second metal layer, and the thermal expansion coefficient of the third metal layer is greater than or equal to the thermal expansion coefficient of the second metal layer Thermal expansion coefficient 如請求項1或2任一項所述的靜電夾盤,其中,該第一金屬層的材料為鉿、鉬、銠、鉈、鈦、鎢、鋯、哈氏合金、蒙乃爾合金中的至少一種或鉿、鉬、銠、鉈、鈦、鎢、鋯的各個金屬合金中的至少一種。The electrostatic chuck according to any one of claims 1 or 2, wherein the material of the first metal layer is at least one selected from the group consisting of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, Hastelloy, and Monel. One or at least one of each metal alloy of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, and zirconium. 如請求項1或2任一項所述的靜電夾盤,其中,該第二金屬層的材料為鉿、鉬、銠、鉈、鈦、鎢、鋯、哈氏合金、蒙乃爾合金中的至少一種或鉿、鉬、銠、鉈、鈦、鎢、鋯的各個金屬合金中的至少一種。The electrostatic chuck according to any one of claims 1 or 2, wherein the material of the second metal layer is at least one selected from the group consisting of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, Hastelloy, and Monel. One or at least one of each metal alloy of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, and zirconium. 如請求項2所述的靜電夾盤,其中,該第三金屬層的材料為鉿、鉬、銠、鉈、鈦、鎢、鋯、哈氏合金、蒙乃爾合金中的至少一種或鉿、鉬、銠、鉈、鈦、鎢、鋯的各個金屬合金中的至少一種。The electrostatic chuck according to claim 2, wherein the material of the third metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, Hastelloy, Monel, or hafnium, molybdenum , at least one of various metal alloys of rhodium, thallium, titanium, tungsten, and zirconium. 如請求項1所述的靜電夾盤,其中,該第一金屬層的熱膨脹係數小於等於該靜電吸附層熱膨脹係數的1.3倍。The electrostatic chuck according to claim 1, wherein the thermal expansion coefficient of the first metal layer is less than or equal to 1.3 times the thermal expansion coefficient of the electrostatic adsorption layer. 如請求項1所述的靜電夾盤,其中,該靜電夾盤的工作環境溫度為50℃至-180℃。The electrostatic chuck according to claim 1, wherein the working environment temperature of the electrostatic chuck is 50°C to -180°C. 如請求項1所述的靜電夾盤,其中,該靜電夾盤的工作環境溫度為0℃至300℃。The electrostatic chuck according to claim 1, wherein the working environment temperature of the electrostatic chuck is 0°C to 300°C. 如請求項1所述的靜電夾盤,其中,該第一金屬層和該第二金屬層的側壁表面塗覆一陶瓷塗層。The electrostatic chuck according to claim 1, wherein the sidewall surfaces of the first metal layer and the second metal layer are coated with a ceramic coating. 如請求項1所述的靜電夾盤,其中,該基座內部設置有一冷却通道,該冷却通道位於該第一金屬層內或該第二金屬層內或該第一金屬層與該第二金屬層之間。The electrostatic chuck according to claim 1, wherein a cooling channel is disposed inside the base, and the cooling channel is located in the first metal layer or the second metal layer or the first metal layer and the second metal layer between layers. 如請求項10所述的靜電夾盤,其中,該冷却通道內設置一鰭式結構,該鰭式結構為該第一金屬層和/或該第二金屬層向該冷却通道內延伸的一凸起,該凸起用於增大該基座與冷却液的接觸面積,進而增大該基座的熱傳導。The electrostatic chuck according to claim 10, wherein a fin structure is disposed in the cooling channel, and the fin structure is a protrusion extending from the first metal layer and/or the second metal layer into the cooling channel Since, the protrusion is used to increase the contact area between the base and the cooling liquid, thereby increasing the heat conduction of the base. 如請求項11所述的靜電夾盤,其中,每條該冷却通道內部的該鰭式結構的個數至少為一個。The electrostatic chuck according to claim 11, wherein the number of the fin structures inside each of the cooling channels is at least one. 如請求項11所述的靜電夾盤,其中,該鰭式結構設置於該冷却通道的底部。The electrostatic chuck according to claim 11, wherein the fin structure is disposed at the bottom of the cooling channel. 如請求項11所述的靜電夾盤,其中,該鰭式結構設置於該冷却通道的頂端。The electrostatic chuck according to claim 11, wherein the fin structure is disposed on the top of the cooling channel. 如請求項11所述的靜電夾盤,其中,該鰭式結構的橫截面為矩形。The electrostatic chuck of claim 11, wherein the cross section of the fin structure is rectangular. 如請求項11所述的靜電夾盤,其中,該鰭式結構的橫截面為波紋狀。The electrostatic chuck of claim 11, wherein the cross section of the fin structure is corrugated. 如請求項1所述的靜電夾盤,其中,該靜電吸附層和該基座之間藉由一黏結層黏合在一起。The electrostatic chuck according to claim 1, wherein the electrostatic adsorption layer and the base are bonded together by an adhesive layer. 一種等離子體處理裝置,其中,該等離子體處理裝置包括如請求項1-17項中任意一項所述的靜電夾盤。A plasma processing device, wherein the plasma processing device comprises the electrostatic chuck according to any one of claims 1-17.
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