CN213546260U - Electrostatic chuck and plasma processing device thereof - Google Patents
Electrostatic chuck and plasma processing device thereof Download PDFInfo
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- CN213546260U CN213546260U CN202022343117.3U CN202022343117U CN213546260U CN 213546260 U CN213546260 U CN 213546260U CN 202022343117 U CN202022343117 U CN 202022343117U CN 213546260 U CN213546260 U CN 213546260U
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Abstract
The utility model discloses an electrostatic chuck, including electrostatic adsorption layer and the base that is located electrostatic adsorption layer below, electrostatic adsorption layer is ceramic material, and the base includes the first metal level that is close to electrostatic adsorption layer and the second metal level that is located first metal level below, and the coefficient of thermal expansion of first metal level is greater than electrostatic adsorption layer's coefficient of thermal expansion, the coefficient of thermal expansion of less than or equal to second metal level, and the coefficient of thermal expansion of first metal level is less than 15 x 10‑6and/K. This utility model provides an easily produce mechanical stress and lead to the problem of damage in traditional electrostatic chuck, select ESC base and have similar thermal expansion coefficient's special material with the electrostatic adsorption layer, reduced the production of the inside mechanical stress of electrostatic chuck, avoided the unmatched phenomenon of heating power in the electrostatic chuck effectively.
Description
Technical Field
The utility model relates to the field of semiconductor technology, concretely relates to electrostatic chuck and plasma processing apparatus thereof.
Background
In the field of semiconductor technology, plasma etching is one of the most important techniques in semiconductor processing. Plasma etching is used to achieve the pattern replication of a mask to a substrate material by transferring a pattern (pattern) etch on a pattern layer of a photolithographic process to the substrate material, either chemically or physically, or physically assisted by the chemical etch.
Among them, an electrostatic chuck (ESC) is one of the most critical components in a plasma etching process. The development and application diversity of semiconductor technology requires ESCs that can accommodate conditions such as wider temperature ranges, higher power, higher voltage, and wider rf frequency ranges.
However, these harsh conditions cause significant increases in mechanical and electrical stresses within the ESC, and failure to properly handle the resulting stresses can result in damage to the ESC. For example, the ESC at low or high temperatures has a large temperature difference from the bonding temperature or room temperature to the application temperature, which easily causes a phenomenon of a severe thermal mismatch between the substrate of the ESC and the electrostatic adsorption layer, and in turn, a crack of the electrostatic adsorption layer. Meanwhile, damage to the ESC will directly cause malfunction of the plasma etching apparatus.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an electrostatic chuck and plasma processing apparatus thereof to easily produce the problem that mechanical stress leads to the damage in solving traditional electrostatic chuck, select the special material that ESC base and electrostatic adsorption layer have similar thermal expansion coefficient, can reduce the inside mechanical stress's of ESC production, effectively avoid the unmatched phenomenon of thermal force in the ESC.
To achieve the above object, the present invention provides an electrostatic chuck, including an electrostatic adsorption layer and a base located below the electrostatic adsorption layer, the electrostatic adsorption layer is made of a ceramic material, the base includes a first metal layer close to the electrostatic adsorption layer and a second metal layer located below the first metal layer, the thermal expansion coefficient of the first metal layer is greater than that of the electrostatic adsorption layer, less than or equal to that of the second metal layer, and the thermal expansion coefficient of the first metal layer is less than 15 × 10-6/K。
In the above electrostatic chuck, the base further includes a third metal layer disposed below the second metal layer, and a thermal expansion coefficient of the third metal layer is greater than or equal to a thermal expansion coefficient of the second metal layer.
The electrostatic chuck is characterized in that the material of the first metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, hastelloy and monel alloy, or at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten and zirconium.
The electrostatic chuck is characterized in that the material of the second metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, hastelloy and monel alloy, or at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten and zirconium.
The electrostatic chuck is characterized in that the material of the third metal layer is at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, zirconium, hastelloy and monel alloy, or at least one of hafnium, molybdenum, rhodium, thallium, titanium, tungsten and zirconium.
In the above electrostatic chuck, a thermal expansion coefficient of the first metal layer is less than or equal to 1.3 times a thermal expansion coefficient of the electrostatic absorption layer.
The electrostatic chuck is characterized in that the working environment temperature of the electrostatic chuck is 50 ℃ to-180 ℃.
The electrostatic chuck is characterized in that the working environment temperature of the electrostatic chuck is 0 ℃ to 300 ℃.
In the above electrostatic chuck, the first metal layer and the second metal layer have a ceramic coating on the sidewall surface.
In the above electrostatic chuck, the base is provided therein with a cooling channel, and the cooling channel is located in the first metal layer or the second metal layer or between the first metal layer and the second metal layer.
In the electrostatic chuck, the fin structure is arranged in the cooling channel, the fin structure is a protrusion extending from the first metal layer and/or the second metal layer into the cooling channel, and the protrusion is used for increasing the contact area between the base and the cooling liquid, so as to increase the heat conduction of the base.
In the above electrostatic chuck, the number of the fin structures in each cooling channel is at least one.
In the above electrostatic chuck, the fin structure is disposed at the bottom of the cooling channel.
In the above electrostatic chuck, the fin structure is disposed at a top end of the cooling channel.
In the above electrostatic chuck, a cross section of the fin structure is rectangular.
In the above electrostatic chuck, a cross section of the fin structure is corrugated.
The electrostatic chuck is characterized in that the electrostatic adsorption layer and the base are bonded together through an adhesive layer.
The utility model also provides a plasma processing apparatus, plasma processing apparatus includes foretell electrostatic chuck.
The application of the utility model discloses, solved easily produce mechanical stress in traditional electrostatic chuck and lead to the problem of damage, selected ESC base and the special material that the electrostatic adsorption layer has similar thermal expansion coefficient, reduced the production of the inside mechanical stress of electrostatic chuck, avoided the unmatched phenomenon of heating power in the electrostatic chuck effectively.
Compared with the prior art, the utility model discloses following beneficial effect has:
1. the utility model provides an electrostatic chuck adopts different thermal expansion coefficient's multilayer metal to pile up into the base, has controlled the mechanical stress that thermal expansion coefficient did not match and arouse between the adjacent metal level, has reduced the warpage, has also avoided the phenomenon that mechanical properties such as roughness, depth of parallelism are irregular that the warpage leads to, has improved electrostatic chuck's factor of safety.
2. The utility model provides an electrostatic chuck, the first metal layer material thermal expansion coefficient of base through setting up to be close to ceramic electrostatic adsorption layer is close with electrostatic adsorption layer's thermal expansion coefficient for electrostatic chuck can adapt to the great operational environment of difference in temperature, avoids because the expend with heat and contract with cold range of different materials differs greatly to cause electrostatic chuck's fracture.
3. The utility model provides an electrostatic chuck sets up the fin formula protruding structure of inside extension in cooling channel is inside, has effectively increased the area of contact of base with the coolant liquid, has improved the heat-conduction efficiency of base.
4. The utility model provides an electrostatic chuck adopts different metal materials to pile up for the base, can effectively save the material cost of preparation base, has simplified the preparation technology of base greatly.
Drawings
Fig. 1 is a schematic structural view of an electrostatic chuck according to embodiment 1 of the present invention;
fig. 2 is a schematic cross-sectional view of the cooling channel and the fin structure in the embodiment 1 provided by the present invention;
fig. 3 is a schematic cross-sectional view of a cooling channel and a fin structure according to another embodiment of the present invention 2;
fig. 4 is a schematic cross-sectional view of a cooling channel and a fin structure according to another embodiment 3 of the present invention;
fig. 5 is a schematic structural diagram of a plasma processing apparatus according to the present invention.
Detailed Description
The present invention will be further described with reference to the following embodiments, which are only used for illustrating the present invention and are not intended to limit the scope of the present invention.
The electrostatic chuck is a very important component of a vacuum processing apparatus for supporting a substrate w to be processed and adjusting parameters such as an electric field, temperature, etc. in a reaction chamber during a process. Currently, as integrated circuit processes are developed, the temperature adjustment range of the electrostatic chuck is increased, for example, in an ultra-low temperature etching process, the operating temperature of the electrostatic chuck can reach 150 degrees below zero, or even 180 degrees below zero, which is more than two hundred degrees compared with the temperature before the electrostatic chuck is operated and the normal temperature during storage.
The utility model relates to an electrostatic chuck, refer to as shown in figure 1, include the electrostatic adsorption layer 1 and the metal base 2 that form by dielectric material, because dielectric material and aluminium metal material's coefficient of thermal expansion is different, consequently, this kind of big difference in temperature operational environment has proposed very high requirement to electrostatic chuck's safety.
Wherein, the upper part of the electrostatic adsorption layer 1 is used for bearing a substrate w to be processed; the susceptor 2 is located below the electrostatic adsorption layer 1. The electrostatic adsorption layer 1 is made of ceramic material; in this embodiment, the ceramic material of the electrostatic adsorption layer 1 is aluminum oxide or aluminum nitride; in another embodiment, the ceramic material of the electrostatic adsorption layer 1 is at least one of sapphire, yttria, zirconia, silicon carbide, silicon nitride, or tungsten carbide; the selection of these ceramic materials is related to the environment and chemistry in which the electrostatic chuck is used.
Referring to fig. 1, the base 2 includes a first metal layer 201 adjacent to the electrostatic adsorption layer 1 and a second metal layer 202 located below the first metal layer 201, the first metal layer 201 has a thermal expansion coefficient greater than that of the electrostatic adsorption layer 1 and less than or equal to that of the second metal layer 202, and the first metal layer 201 has a thermal expansion coefficient less than 15 × 10-6And the base 2 is formed by stacking metal materials with different thermal expansion coefficients, so that the material cost of the base 2 is reduced, and the manufacturing process is simplified.
Optionally, the base 2 further includes a third metal layer 203 disposed below the second metal layer 202, and a thermal expansion coefficient of the third metal layer 203 is greater than or equal to a thermal expansion coefficient of the second metal layer 202.
Because the thermal expansion coefficient of the first metal layer 201 of the base 2 close to the electrostatic adsorption layer 1 is greater than that of the electrostatic adsorption layer 1 and is less than that of the second metal layer 202, the mechanical stress caused by the mismatch of the thermal expansion coefficients between the adjacent material layers can be effectively controlled, the warping of the base 2 is reduced, and the phenomenon that the base 2 is irregular in mechanical properties such as flatness and parallelism caused by the warping of the base 2 is avoided, so that the safety factor of the electrostatic chuck is improved.
In this embodiment, the working environment temperature of the electrostatic chuck is-180 ℃ to 50 ℃; in another embodiment, the operating environment temperature of the electrostatic chuck is 0 ℃ to 300 ℃.
Since the susceptor 2 needs to be connected to a radio frequency power source for coupling a radio frequency signal into the reaction chamber, the material of the susceptor 2 is usually a metal material. The utility model discloses in, in order to make first metal level 201 and electrostatic absorption layer 1's ceramic material coefficient of thermal expansion be close, optional, the coefficient of thermal expansion of first metal level 201 is less than or equal to 1.3 times of electrostatic absorption layer 1 coefficient of thermal expansion, and the coefficient of thermal expansion that sets up first metal level 201 is less than 15 x 10-6/K。
The material of the first metal layer 201 is at least one of copper (Cu), hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium (Zr), sapphire, Yttrium Aluminum Garnet (YAG), silicon carbide alloy (Al-SiC), Hastelloy (Hastelloy), 304/316 type Stainless Steel (SS), Monel (Monel), or at least one of hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), and zirconium (Zr).
The material of the second metal layer 202 is one of aluminum (Al), copper (Cu), hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium (Zr), sapphire, Yttrium Aluminum Garnet (YAG), and silicon carbide alloy (Al-SiC), Hastelloy (Hastelloy), Stainless Steel (SS) model 304/316, Monel (Monel), or at least one of respective metal alloys of hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), and zirconium (Zr). The material of the base is selected to ensure that the coefficient of thermal expansion of the first metal layer is less than the coefficient of thermal expansion of the second metal layer.
The material of the third metal layer 203 is at least one of hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), zirconium (Zr), Hastelloy (Hastelloy), Monel (Monel), or at least one of each of hafnium (Hf), molybdenum (Mo), rhodium (Rh), thallium (Ta), titanium (Ti), tungsten (W), and zirconium (Zr).
In this embodiment 1, the material of the first metal layer 201 and the second metal layer 202 is one or more of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, and zirconium.
In another embodiment 2, the material of the first metal layer 201 and the second metal layer 202 is one or more of various metal alloys of hafnium, molybdenum, rhodium, thallium, titanium, tungsten, and zirconium.
In another embodiment 3, the material of the first metal layer 201 and the second metal layer 202 is one or two of hastelloy and Monel (Monel).
These metal materials having different thermal expansion coefficients and thermal conductivities can effectively adapt to the working environment of the electrostatic chuck at low temperature (the working environment temperature is-180 ℃ to 50 ℃) or high temperature (the working environment temperature is 0 ℃ to 200 ℃).
In the plasma etching process, the electrostatic chuck is placed inside the plasma reaction chamber for clamping the substrate w to be processed, and during the etching operation, the sidewall of the electrostatic chuck is exposed on the surface of the plasma gas source and is easily etched by the plasma gas source or corroded by the chemical gas, therefore, referring to fig. 1, the sidewall surfaces of the first metal layer 201 and the second metal layer 202 are coated with the ceramic coating to protect the sidewall of the electrostatic chuck from the corrosion of the chemical gas and the arc discharge, since the thermal expansion coefficient of the first metal layer 201 is close to that of the ceramic material, even if the temperature of the electrostatic chuck is greatly changed after the ceramic coating is coated on the sidewall surface of the first metal layer 201, the first metal layer 201 does not greatly deform with the ceramic coating, so that the ceramic coating is broken and falls off, and since the first metal layer 201 is closer to the plasma environment, the plasma bombardment risk possibly generated by the falling of the side wall ceramic coating can be effectively avoided.
Referring to fig. 1, a cooling channel 4 is provided inside the susceptor 2 for introducing a cooling fluid inside the cooling channel 4 to cool the susceptor 2; and the cooling channel 4 is located in the first metal layer 201 or in the second metal layer 202 or penetrates through the first metal layer 201 and the second metal layer 202. The material of the base 2 should be selected in consideration of the thermal expansion coefficient and the thermal conductivity coefficient, and the material with the thermal conductivity coefficient may be selected according to the requirement of the thermal conductivity rate of different processes. For example, in a process requiring rapid temperature adjustment of the electrostatic chuck, the material of the first metal layer 201 and/or the second metal layer 202 of the susceptor 2 having a higher thermal conductivity may be selected from the above listed materials, and when the temperature of the electrostatic chuck needs to be adjusted slowly, the material of the first metal layer 201 and/or the second metal layer 202 of the susceptor having a lower thermal conductivity may be selected from the above listed materials.
Referring to fig. 2, in order to increase the temperature adjustment speed of the susceptor 2, a fin structure 5 is disposed in the cooling channel 4, and the fin structure 5 is a protrusion of the first metal layer 201 and/or the second metal layer 202 extending into the cooling channel 4; wherein, the fin structure 5 is arranged inside the cooling channel 4 to increase the contact area between the cooling liquid inside the cooling channel 4 and the base 2, thereby increasing the heat conduction of the base 2. Wherein, the number of the fin structures 5 in each cooling channel 4 is at least one.
In the present embodiment 1, referring to fig. 2, the cooling channel 4 is located in the second metal layer 202 inside the susceptor 2, and the fin structure 5 is disposed at the bottom of the cooling channel 4, and the cross section of the fin structure is rectangular.
In another embodiment 2, referring to fig. 3, the cooling channel 4 is located in the first metal layer 201 inside the susceptor 2, and the fin structure 5 is disposed at the bottom end of the cooling channel 4, and the cross section of the fin structure 5 is corrugated for increasing the contact area between the susceptor 2 and the cooling liquid, thereby increasing the heat conduction rate of the susceptor 2.
In another embodiment 3, referring to fig. 4, the cooling channel 4 penetrates through the first metal layer 201 and the second metal layer 202 inside the susceptor 2, and the installation area of the cooling channel 4 is increased, so that the contact area between the susceptor 2 and the cooling liquid inside the cooling channel 4 can be effectively increased, and the heat conduction of the susceptor 2 can be further increased.
In other embodiments, if the base 2 includes more than two metal layers, the cooling channel 4 may be disposed in other metal layers besides the first metal layer 201 and the second metal layer 202, and correspondingly, the fin structure 5 is disposed on the metal layer below and/or above the cooling channel 4.
Referring to fig. 4, the fin structure 5 is disposed at the bottom end of the cooling channel 4, and the cross section of the fin structure 5 is corrugated for increasing the contact area between the susceptor 2 and the cooling liquid, thereby increasing the heat conduction of the susceptor 2.
The fin structure 5 can be modified in various ways, for example, only part of the fin structure 5 can be arranged in the cooling channel 4 in the central region or the peripheral region of the base 2 to realize rapid temperature conduction in local regions; alternatively, in another embodiment, part of the fin structure 5 is connected to the metal layer above the cooling channel 4, and part of the fin structure 5 is connected to the metal layer below the cooling channel 4, so as to achieve different heat conduction effects.
The present invention also provides a plasma processing apparatus, as shown in fig. 5, which includes a reaction chamber 6, a plasma gas source 7, a Radio Frequency (RF) power source 8 and the above electrostatic chuck; the plasma gas source 7 is arranged above the reaction cavity 6 and used for introducing plasma into the reaction cavity 6; the electrostatic chuck is arranged in the reaction cavity 6, and an electrode is embedded in the electrostatic adsorption layer 1 of the electrostatic chuck and is used for clamping a substrate w to be processed when current is applied in the etching process; the radio frequency power supply 8 is connected with the metal base 2 of the electrostatic chuck and transmits the radio frequency power supply to the reaction cavity 6 through the conductive metal base 2; the electrostatic adsorption layer 1 and the base 2 are bonded together through the bonding layer 3.
The electrostatic chuck is internally provided with a helium channel 9, the helium channel 9 extends to a position between the electrostatic adsorption layer 1 and the substrate w to be processed through the base 2, and the helium channel is used for introducing helium to act on the back of the substrate w to be processed in the plasma etching process so as to accelerate heat conduction between the substrate w to be processed and the electrostatic adsorption layer 1 and control the temperature of the substrate w to be processed. The cooling channel 4 provided inside the susceptor 2 in the electrostatic chuck realizes the temperature control of the susceptor 2 by heat exchange with the cooling liquid.
The utility model discloses a theory of operation:
an electrostatic chuck includes an electrostatic adsorption layer and a susceptor below the electrostatic adsorption layer; the base comprises a first metal layer close to the electrostatic adsorption layer, a second metal layer below the first metal layer, and a third metal layer below the second metal layer, wherein the thermal expansion coefficient of the first metal layer is greater than that of the electrostatic adsorption layer and less than or equal to that of the second metal layer, and the thermal expansion coefficient of the first metal layer is less than 15 multiplied by 10-6K; the thermal expansion coefficient of the third metal layer is greater than or equal to that of the second metal layer, so that the mechanical stress caused by the mismatch of the thermal expansion coefficients of the adjacent metal layers is effectively controlled, and the safety coefficient of the electrostatic chuck is improved; a cooling channel is arranged in the base; the fin structure is arranged in the cooling channel and is a protrusion extending from the first metal layer and/or the second metal layer to the inside of the cooling channel and used for increasing the contact area of the base and cooling liquid and further increasing the heat conduction of the base.
To sum up, the utility model relates to an electrostatic chuck and plasma processing apparatus thereof has solved the problem that easily produces mechanical stress and lead to the damage in traditional electrostatic chuck, selects the special material that ESC base and electrostatic adsorption layer have similar thermal expansion coefficient, has reduced the inside mechanical stress's of electrostatic chuck production, has avoided the unmatched phenomenon of heating power in the electrostatic chuck effectively, is particularly useful for the great plasma processing apparatus of technology difference in temperature.
While the present invention has been described in detail with reference to the preferred embodiments thereof, it should be understood that the above description should not be taken as limiting the present invention. Numerous modifications and alterations to the present invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (15)
1. An electrostatic chuck comprises an electrostatic adsorption layer and a base positioned below the electrostatic adsorption layer, and is characterized in that the electrostatic adsorption layer is made of ceramic materials, and the base comprises a supportA first metal layer near the electrostatic adsorption layer and a second metal layer below the first metal layer, wherein the thermal expansion coefficient of the first metal layer is larger than that of the electrostatic adsorption layer and smaller than or equal to that of the second metal layer, and the thermal expansion coefficient of the first metal layer is smaller than 15 multiplied by 10-6/K。
2. The electrostatic chuck of claim 1, wherein the pedestal further comprises a third metal layer disposed below the second metal layer, the third metal layer having a coefficient of thermal expansion greater than or equal to a coefficient of thermal expansion of the second metal layer.
3. The electrostatic chuck of claim 1, wherein a coefficient of thermal expansion of the first metal layer is less than or equal to 1.3 times a coefficient of thermal expansion of the electrostatic chuck layer.
4. The electrostatic chuck of claim 1, wherein a working ambient temperature of the electrostatic chuck is between 50 ℃ and-180 ℃.
5. The electrostatic chuck of claim 1, wherein a working ambient temperature of the electrostatic chuck is 0 ℃ to 300 ℃.
6. The electrostatic chuck of claim 1, wherein the sidewall surfaces of the first and second metal layers are coated with a ceramic coating.
7. The electrostatic chuck of claim 1, wherein the base has cooling channels disposed therein, the cooling channels being located within the first metal layer or the second metal layer or between the first metal layer and the second metal layer.
8. The electrostatic chuck of claim 7, wherein a fin structure is disposed in the cooling channel, the fin structure being a protrusion of the first metal layer and/or the second metal layer extending into the cooling channel, the protrusion configured to increase a contact area of the pedestal with a cooling fluid, thereby increasing a thermal conductivity of the pedestal.
9. The electrostatic chuck of claim 8, wherein the number of fin structures within each cooling channel is at least one.
10. The electrostatic chuck of claim 8, wherein the fin structure is disposed at a bottom of the cooling channel.
11. The electrostatic chuck of claim 8, wherein the fin structure is disposed at a top end of the cooling channel.
12. The electrostatic chuck of claim 8, wherein the fin structure is rectangular in cross-section.
13. The electrostatic chuck of claim 8, wherein a cross-section of the fin structure is corrugated.
14. The electrostatic chuck of claim 1, wherein the electrostatic clamping layer and the pedestal are bonded together by an adhesive layer.
15. A plasma processing apparatus, characterized in that the plasma processing apparatus comprises an electrostatic chuck according to any of claims 1-14.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022343117.3U CN213546260U (en) | 2020-10-20 | 2020-10-20 | Electrostatic chuck and plasma processing device thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022343117.3U CN213546260U (en) | 2020-10-20 | 2020-10-20 | Electrostatic chuck and plasma processing device thereof |
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| CN213546260U true CN213546260U (en) | 2021-06-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114388323A (en) * | 2020-10-20 | 2022-04-22 | 中微半导体设备(上海)股份有限公司 | Electrostatic chuck and plasma processing device thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114388323A (en) * | 2020-10-20 | 2022-04-22 | 中微半导体设备(上海)股份有限公司 | Electrostatic chuck and plasma processing device thereof |
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