TW202111774A - 基板處理方法及基板處理裝置 - Google Patents
基板處理方法及基板處理裝置 Download PDFInfo
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Abstract
提供會提升階段覆蓋率的基板處理方法及基板處理裝置。基板處理方法,係基板處理裝置之基板處理方法,該基板處理裝置具備:處理容器,係具有可升降的載置台;構件,係在與載置台之間形成處理空間;原料氣體供給部;反應氣體供給部;以及排氣部,係具有可調整開合度的壓力調整閥;該基板處理方法具有反覆下述工序的工序:吸附工序,係供給原料氣體,使其吸附於基板;第1吹淨工序,係將剩餘的原料氣體排出;反應工序,係供給反應氣體,使其與原料氣體反應;以及第2吹淨工序,係將剩餘的反應氣體排出;吸附工序及/或反應工序中載置台與構件之間之間隙的寬度及/或壓力調整閥的開合度,係較第1吹淨工序及/或第2吹淨工序中載置台與構件之間之間隙的寬度及/或壓力調整閥的開合度要小。
Description
本揭露係關於一種基板處理方法及基板處理裝置。
已知一種例如使用TiN膜作為3DNAND之字元線的位障金屬之技術。
專利文獻1揭示一種以氣相沉積系統在基板上形成薄膜的方法,其具有:在該氣相沉積系統內配置基板且該氣相沉積系統會在該基板之上方劃分處理空間的配置階段;將氣體狀的薄膜前驅體導入該處理空間的階段;接續著該薄膜前驅體往該處理空間的導入,而將該處理空間的容積從第1尺寸擴大至第2尺寸以形成擴大處理空間的擴大階段;將還原氣體導入該擴大處理空間的階段;以及自該還原氣體形成還原電漿的階段。
專利文獻1:日本特開2009-521594號公報
在一面向中,本揭露提供一種會提升階段覆蓋率的基板處理方法及基板處理裝置。
為了解決上述課題,根據一形態,提供一種基板處理方法,係基板處理裝置之基板處理方法,該基板處理裝置具備:處理容器,係具有載置基板且可升降的載置台;構件,係與該載置台之載置面對向配置,且在與該載置台之間形成處理空間;原料氣體供給部,係對該處理容器內供給原料氣體;反
應氣體供給部,係對該處理容器內供給反應氣體;以及排氣部,係具有可調整開合度的壓力調整閥,會將該處理容器內的氣體排出;該基板處理方法具有反覆下述工序的工序:吸附工序,係將原料氣體供給至該處理容器內,使其吸附於該基板;第1吹淨工序,係將該吸附工序之剩餘的原料氣體排出;反應工序,係將反應氣體供給至該處理容器內,使其與該原料氣體反應;以及第2吹淨工序,係將該反應工序之剩餘的反應氣體排出;該吸附工序及/或該反應工序中該載置台與該構件之間之間隙的寬度及/或該壓力調整閥的開合度,較該第1吹淨工序及/或該第2吹淨工序中該載置台與該構件之間之間隙的寬度及/或該壓力調整閥的開合度要小。
根據一面向,可提供一種會提升階段覆蓋率的基板處理方法及基板處理裝置。
W:基板
1:處理容器
2:基板載置台(載置台)
3:噴淋頭(構件)
4:排氣部
5:處理氣體供給機構(原料氣體供給部、反應氣體供給部、載體氣體供給部)
6:控制裝置
22:蓋構件
24:升降機構
32:噴淋板(構件)
34:環狀突起部(環狀凸部)
37:處理空間
38:環狀間隙
41:排氣配管
42:APC閥
43:開閉閥
44:真空泵
100:基板處理裝置
L1:原料氣體供給管線(原料氣體供給部)
L2:反應氣體供給管線(反應氣體供給部)
L3:第1連續N2氣體供給管線(載體氣體供給部)
L4:第2連續N2氣體供給管線(載體氣體供給部)
L5:第1快速吹淨線
L6:第2快速吹淨線
圖1係本實施形態相關之基板處理裝置的剖面示意圖之一例。
圖2係本實施形態相關之基板處理裝置的剖面示意圖之一例。
圖3係顯示本實施形態相關之基板處理裝置中成膜處理的一例之流程圖。
圖4係顯示本實施形態相關之基板處理裝置中基板處理方法的一例之流程圖。
圖5係說明氣體供給、間隙寬度、APC開合度之控制的一例之時間表。
圖6係1個循環中壓力變動之一例。
圖7係基板處理中模型圖之一例。
圖8係說明氣體供給、間隙寬度、APC開合度之控制的另一例之時間表。
圖9(a)係顯示原料氣體供給量與階段覆蓋率之關係的圖表之一例,(b)係顯示低壓工序時之壓力與階段覆蓋率之關係的圖表之一例。
圖10係顯示間隙距離與膜厚之關係的圖表之一例。
圖11係顯示各間隙寬度中壓力變化的圖表之一例。
以下,便參照圖式說明用以實施本揭露的形態。在各圖式中,會有對相同構成部分賦予相同符號以省略重複說明之情形。
(基板處理裝置)
使用圖1及圖2來說明本實施形態相關之基板處理裝置100。圖1及圖2係本實施形態相關之基板處理裝置100的剖面示意圖之一例。
基板處理裝置100係會對晶圓等基板W供給作為原料氣體之TiCl4氣體及作為反應氣體之NH3氣體以在基板W表面使作為金屬含有膜之TiN膜成膜的裝置。基板處理裝置100係例如由ALD(Atomic Layer Deposition)裝置等構成。
如圖1及圖2所示,基板處理裝置100係具有處理容器1、基板載置台(台座)2、噴淋頭3、排氣部4、處理氣體供給機構5、控制裝置6。
處理容器1係由鋁等金屬構成,為大致圓筒狀。在處理容器1之側壁形成用以將基板W搬入或搬出的搬出入口11,搬出入口11能以閘閥12加以開閉。在處理容器1本體之上設有剖面呈矩形狀之圓環狀的排氣管13。排氣管13係沿著內周面形成有狹縫13a。另外,在排氣管13外壁形成有排氣口13b。在排氣管13上面設有頂壁14以將處理容器1之上部開口加以阻塞。頂壁14與排氣管13之間係以密封環15加以氣密密封。區劃構件16會在基板載置台2(及蓋構件22)往後
述處理位置(第1處理位置、第2處理位置)上升時,將處理容器1內部加以上下區劃。
基板載置台2會在處理容器1內將基板W水平支撐。基板載置台2呈與基板W對應之大小的圓板狀,而被支撐構件23所支撐。基板載置台2係以氮化鋁(AlN)等陶瓷材料、或鋁或鎳基合金等金屬材料所構成,在內部填埋有用以加熱基板W的加熱器21。加熱器21係由加熱器電源(未圖示)供電而發熱。此外,藉由設在基板載置台2上面之基板載置面附近的熱電偶(未圖示)之溫度訊號來控制加熱器21之輸出,而將基板W控制成既定溫度。
在基板載置台2設有由鋁等陶瓷所構成之蓋構件22,以覆蓋基板載置面之外周區域及基板載置台2側面。
支撐構件23會從基板載置台2之底面中央貫穿形成在處理容器1之底壁的孔部而往處理容器1下方延伸,其下端係連接於升降機構24。基板載置台2可藉由升降機構24而透過支撐構件23在圖1中實線所示之第1處理位置、圖2中實線所示之第2處理位置、其下方之圖1中二點鏈線所示的可搬送基板W之搬送位置之間升降。另外,在支撐構件23之處理容器1下方安裝有突緣部25,在處理容器1底面與突緣部25之間設有伸縮管26,係會將處理容器1內之環境氛圍與外部氣體加以區劃,且伴隨基板載置台2之升降動作而伸縮。
在處理容器1底面附近會以從升降板27a往上方突出之方式設有3根(僅圖示2根)基板支撐銷27。基板支撐銷27可藉由設在處理容器1下方的升降機構28而透過升降板27a來升降,且***通在位於搬送位置之基板載置台2上所設置的貫通孔2a,而能相對於基板載置台2上面突出沒入。藉由以上述方式使基板
支撐銷27升降,而在基板搬送機構(未圖示)與基板載置台2之間進行基板W的收授。
噴淋頭3會將處理氣體噴淋狀地供給至處理容器1內。噴淋頭3係金屬製,且設成與基板載置台2對向,具有與基板載置台2大致相同的直徑。噴淋頭3具有固定在處理容器1之頂壁14的本體部31與連接於本體部31下的噴淋板32。在本體部31與噴淋板32之間形成有氣體擴散空間33,在氣體擴散空間33以貫通本體部31及處理容器1之頂壁14中央之方式而設有氣體導入孔36。在噴淋板32之周緣部形成有往下方突出之環狀突起部34,在噴淋板32之環狀突起部34內側的平坦面則形成有氣體噴出孔35。
在基板載置台2存在於處理位置的狀態下,會在噴淋板32與基板載置台2之間形成處理空間37,環狀突起部34與基板載置台2的蓋構件22上面會接近而形成環狀間隙38。此處,基板載置台2存在於第1處理位置之狀態下的間隙寬度G1(參照圖1)會較基板載置台2存在於第2處理位置之狀態下的間隙寬度G2(參照圖2)要窄。另外,在基板載置台2存在於第1處理位置的狀態下,蓋構件22上面會配置在較區劃構件16上面要上方處。在基板載置台2存在於第2處理位置的狀態下,蓋構件22上面會配置在較區劃構件16上面要下方處。
排氣部4會對處理容器1內部進行排氣。排氣部4具有連接於排氣管13之排氣口13b的排氣配管41、APC(Auto Pressure Controller)閥42、開閉閥43、真空泵44。排氣配管41之一端係連接於排氣管13之排氣口13b,另一端則連接於真空泵44之吸入埠。在排氣管13與真空泵44之間,係從上游側依序設有APC閥42、開閉閥43。APC閥42會調整排氣路徑之流導以調整處理空間37之壓力。開閉閥43會切換排氣配管41的開閉。在處理時,區劃構件16及基板載置台2(蓋構件
22)會將處理容器1內部區劃成包含處理空間37的上部空間與基板載置台2內面側的下部空間。藉此,處理空間37內的氣體會透過環狀間隙38、狹縫13a而到達排氣管13內部之環狀空間,並藉由排氣部4之真空泵44從排氣管13之排氣口13b通過排氣配管41而被排出。此外,下部空間會藉由未圖示之吹淨氣體供給機構而成為清淨環境氛圍。因此,處理空間37之氣體不會流入下部空間。
處理氣體供給機構5具有原料氣體供給管線L1、反應氣體供給管線L2、第1連續N2氣體供給管線L3、第2連續N2氣體供給管線L4、第1快速吹淨管線L5、及第2快速吹淨管線L6。
原料氣體供給管線L1係從作為金屬含有氣體、例如TiCl4氣體之供給源的原料氣體供給源GS1延伸,並連接於匯流配管L7。匯流配管L7係連接於氣體導入孔36。在原料氣體供給管線L1,係從原料氣體供給源GS1側依序設有質流控制器M1、緩衝槽T1、及開閉閥V1。質流控制器M1會控制在原料氣體供給管線L1流動的TiCl4氣體之流量。緩衝槽T1會暫時儲藏TiCl4氣體,並在短時間供給必要之TiCl4氣體。開閉閥V1會在ALD程序時切換TiCl4氣體的供給/停止。
反應氣體供給管線L2係從作為反應氣體、例如NH3氣體之供給源的反應氣體供給源GS2延伸,並連接於匯流配管L7。在反應氣體供給管線L2,係從反應氣體供給源GS2側依序設有質流控制器M2、緩衝槽T2、及開閉閥V2。質流控制器M2會控制在反應氣體供給管線L2流動的NH3氣體之流量。緩衝槽T2會暫時儲藏NH3氣體,並在短時間供給必要之NH3氣體。開閉閥V2會在ALD程序時切換NH3氣體的供給/停止。
第1連續N2氣體供給管線L3係從作為N2氣體之供給源的N2氣體供給源GS3延伸,並連接於原料氣體供給管線L1。藉此,會透過第1連續N2氣體供
給管線L3來對原料氣體供給管線L1側供給N2氣體。第1連續N2氣體供給管線L3會在ALD法所致之成膜中常時地供給N2氣體,而作為TiCl4氣體之載體氣體來發揮功能且也具有吹淨氣體之功能。在第1連續N2氣體供給管線L3,係從N2氣體供給源GS3側依序設有質流控制器M3、開閉閥V3、及氣孔F3。質流控制器M3會控制在第1連續N2氣體供給管線L3流動的N2氣體之流量。氣孔F3會抑制由緩衝槽T1,T5供給之較大流量氣體逆流至第1連續N2氣體供給管線L3。
第2連續N2氣體供給管線L4係從作為N2氣體之供給源的N2氣體供給源GS4延伸,並連接於反應氣體供給管線L2。藉此,會透過第2連續N2氣體供給管線L4來對反應氣體供給管線L2側供給N2氣體。第2連續N2氣體供給管線L4會在ALD法所致之成膜中常時地供給N2氣體,而作為NH3氣體之載體氣體來發揮功能且也具有吹淨氣體之功能。在第2連續N2氣體供給管線L4,係從N2氣體供給源GS4側依序設有質流控制器M4、開閉閥V4、及氣孔F4。質流控制器M4會控制在第2連續N2氣體供給管線L4流動的N2氣體之流量。氣孔F4會抑制由緩衝槽T2,T6供給之較大流量氣體逆流至第2連續N2氣體供給管線L4。
第1快速吹淨管線L5係從作為N2氣體之供給源的N2氣體供給源GS5延伸,並連接於第1連續N2氣體供給管線L3。藉此,會透過第1快速吹淨管線L5及第1連續N2氣體供給管線L3來對原料氣體供給管線L1側供給N2氣體。第1快速吹淨管線L5只有在ALD法所致之成膜中的吹淨步驟時會供給N2氣體。在第1快速吹淨管線L5,係從N2氣體供給源GS5側依序設有質流控制器M5、緩衝槽T5、及開閉閥V5。質流控制器M5會控制在第1快速吹淨管線L5流動的N2氣體之流量。緩衝槽T5會暫時儲藏N2氣體,並在短時間供給必要之N2氣體。開閉閥V5會在ALD程序的吹淨時切換N2氣體的供給/停止。
第2快速吹淨管線L6係從作為N2氣體之供給源的N2氣體供給源GS6延伸,並連接於第2連續N2氣體供給管線L4。藉此,會透過第2快速吹淨管線L6及第2連續N2氣體供給管線L4來對反應氣體供給管線L2側供給N2氣體。第2快速吹淨管線L6只有在ALD法所致之成膜中的吹淨步驟時會供給N2氣體。在第2快速吹淨管線L6,係從N2氣體供給源GS6側依序設有質流控制器M6、緩衝槽T6、及開閉閥V6。質流控制器M6會控制在第2快速吹淨管線L6流動的N2氣體之流量。緩衝槽T6會暫時儲藏N2氣體,並在短時間供給必要之N2氣體。開閉閥V6會在ALD程序的吹淨時切換N2氣體的供給/停止。
控制裝置6會控制基板處理裝置100之各部的動作。控制裝置6具有CPU(Central Processing Unit)、ROM(Read Only Memory)及RAM(Random Access Memory)。CPU會依據儲存在RAM等記憶區域之程式庫來執行所期望的處理。在程式庫係設定有針對程序條件的裝置控制資訊。控制資訊可為例如氣體流量、壓力、溫度、程序時間。此外,程式庫及控制裝置6所使用的程式可記憶在例如硬碟、半導體記憶體。另外,程式庫等可在收容在CD-ROM、DVD等可攜式之電腦可讀取的記憶媒體之狀態下來設定於既定位置並被讀出。
(成膜處理)
接著,使用圖3來說明基板處理裝置100所致之成膜處理。圖3係顯示本實施形態相關之基板處理裝置100中成膜處理的一例之流程圖。
步驟S101中,係將基板W搬入基板處理裝置100之處理容器1內。具體而言,係在使藉由加熱器21加熱成既定溫度(例如,300℃~700℃)的基板載置台2下降至搬送位置(圖1中以二點鏈線表示)之狀態下,開啟閘閥12。接著,藉由搬送臂(未圖示)將基板W透過搬出入口11來搬入至處理容器1內,並以基板支
撐銷27來加以支撐。搬送臂從搬出入口11退開時,則關閉閘閥12。另外,使基板支撐銷27下降,來將基板W載置在基板載置台2。
步驟S102中,控制裝置6會控制升降機構24,來使基板載置台(台座)2上升至處理位置(第1處理位置或第2處理位置)。藉此,處理容器1之內部會被區劃成包含處理空間37之基板載置台2表面(基板載置面)側的上部空間與基板載置台2內面側的下部空間。
步驟S103中,係使基板載置台2上之基板W升溫且調整APC閥42的開合度。亦即,基板載置台2上之基板W會被加熱器21升溫成既定溫度。另外,控制裝置6會控制排氣部4以將處理容器1內調節成既定真空度。之後,控制裝置6會開啟開閉閥V3,V4,並關閉開閉閥V1,V2,V5,V6。藉此,將N2氣體從N2氣體供給源GS3,GS4經由第1連續N2氣體供給管線L3及第2連續N2氣體供給管線L4供給至處理空間37內以使壓力上升。另外,控制裝置6係根據檢測處理空間37內之壓力的壓力感應器(未圖示)來調整使處理空間37內之壓力成為所期望壓力的APC閥42之開合度。藉此,控制裝置6會將處理空間37內之壓力與APC閥42之開合度產生關聯並記憶。此外,此時,從原料氣體供給源GS1對緩衝槽T1內供給TiCl4氣體,來將緩衝槽T1內之壓力維持在大致一定。另外,從N2氣體供給源GS5,GS6對緩衝槽T5,T6內供給N2氣體,來將緩衝槽T5,T6內之壓力維持在大致一定。
步驟S104中,會執行在基板W使TiN膜成膜的基板處理。此外,此處的處理將使用圖4而在之後說明。基板處理結束後,便前進到步驟S105。
步驟S105中,控制裝置6會控制升降機構24,來使基板載置台(台座)2下降至搬送位置。
步驟S106中,會將基板W從基板處理裝置100之處理容器1內搬出。具體而言,係使基板支撐銷27上升,而頂起載置在基板載置台2之基板W,並以基板支撐銷27來加以支撐。另外,會開啟閘閥12。接著,藉由搬送臂(未圖示)將基板W透過搬出入口11來從處理容器1內搬出。搬送臂從搬出入口11退開時,則關閉閘閥12。藉由以上方式,便結束在基板處理裝置100中在基板W使TiN膜成膜的處理。
接著,使用圖4到圖7進一步來說明關於步驟S104的基板處理。圖4係顯示本實施形態相關之基板處理裝置100中基板處理方法的一例之流程圖。圖5係說明氣體供給、間隙寬度、APC開合度之控制的一例之時間表。圖6係1個循環中壓力變動之一例。圖7係基板處理中模型圖之一例。
此外,圖5上段係表示氣體供給,縱軸係表示供給氣體之流量,橫軸係表示時間。圖5中段係表示基板載置台2在高度方向之位置,縱軸係表示基板載置台2的高度,橫軸係表示時間。亦即,圖5中段的圖表中,表示縱軸值越大則間隙寬度越窄,縱軸值越小則間隙寬度越寬。圖5下段係表示APC閥42之開合度,縱軸係表示APC閥42之開合度,橫軸係表示時間。另外,圖6中,縱軸係表示壓力,橫軸係表示時間。另外,圖7中,作為基板W之構造體200的一例,係表示高長寬比的孔或槽。此外,構造體200也可適用於具有上下方向延伸的縱槽與從縱槽往橫向延伸的橫槽之肋狀的立體構造。
步驟S1中,控制裝置6會控制升降機構24而開始使基板載置台2往第1處理位置(參照圖1。圖5中以Narrow表示)移動(上升)的上升動作,且開始使APC閥42之開合度成為第1開合度(圖5中以Close表示)的關閉動作。此處,第1開合度係較後述第2開合度要小(關閉側)的開合度。此外,第1開合度之值係根據程
式庫所記載的壓力、與步驟S103中所記憶之壓力和開合度的關係來決定。另外,控制裝置6會將質流控制器M3,M4之流量(圖5中以c-N2表示之載體N2氣體的流量)設為程式庫所設定之既定流量。此外,載體N2氣體係從N2氣體供給源GS3,GS4經由第1連續N2氣體供給管線L3及第2連續N2氣體供給管線L4而供給至處理空間37內。
步驟S2中,控制裝置6會開啟開閉閥V1,並對處理空間37內供給作為原料氣體之TiCl4氣體。此處,環狀間隙38之間隙寬度G1係較間隙寬度G2要窄(例如,0.5mm),另外,APC閥42之開合度(第1開合度)也較後述第2開合度要小。因此,供給至處理空間37內之TiCl4氣體會被封入在處理空間37內,如圖6所示,使處理空間37內的壓力上升。藉此,供給之TiCl4氣體不會立刻被排出,而能使原料氣體分子與基板W之構造體200的接觸頻率增加。另外,如圖7(a)所示,能將原料氣體供給至複雜的構造體200深處,而能使原料氣體分子吸附在構造體200表面。
步驟S3中,控制裝置6會關閉開閉閥V1。另外,控制裝置6會控制升降機構24而開始使基板載置台2往第2處理位置(參照圖2。圖5中以Wide表示)移動(下降)的下降動作,且開始使APC閥42之開合度成為第2開合度(圖5中以Open表示)的開啟動作。此處,第2開合度係較第1開合度要大(開啟側)的開合度。此外,第2開合度之值係根據程式庫所記載的壓力、與步驟S103中所記憶之壓力和開合度的關係來決定。
步驟S4中,控制裝置6會開啟開閉閥V5,V6,並對處理空間37內供給N2氣體(圖5中以Flash N2表示)。此時,由於N2氣體係在暫時儲藏在緩衝槽T5,T6後才被供給至處理容器1內,因此可供給較大的流量。另外,環狀間隙38之間隙
寬度會變成較間隙寬度G1要寬,另外,APC閥42之開合度也會變成較第1開合度要大。藉此,如圖7(b)所示,會快速吹淨處理空間37之剩餘的TiCl4氣體等。此外,圖5中,快速吹淨雖圖示為在基板載置台2的下降動作中,於APC閥42之開合度的開啟動作中開始,但並不限於此,也可以在基板載置台2的下降動作結束後,於APC閥42之開合度調整完成後才進行。
步驟S5中,控制裝置6會關閉開閉閥V5,V6。另外,控制裝置6會使質流控制器M3,M4之流量(載體N2氣體之流量)變成較原料氣體供給時(步驟S2)、快速吹淨時(步驟S4)要小。另外,環狀間隙38之間隙寬度G2會變成較間隙寬度G1要寬(例如,6mm),另外,APC閥42之開合度(第2開合度)也會變成較第1開合度要大。因此,能使從處理空間37往真空泵44之排氣流導變小,如圖6所示,使處理空間37內之壓力成為低壓(圖6中以low pressure表示)。藉此,如圖7(b)所示,便能夠輕易排出構造體200內之剩餘的TiCl4氣體、N2氣體等。
步驟S6中,控制裝置6會控制升降機構24而開始使基板載置台2往第1處理位置(參照圖1)移動(上升)的上升動作。
步驟S7中,控制裝置6會開始使APC閥42之開合度成為第1開合度的關閉動作。另外,控制裝置6會使質流控制器M3,M4之流量(載體N2氣體之流量)變成較步驟S5,S6要大。例如,回到步驟S1~S4的流量。
步驟S8中,控制裝置6會開啟開閉閥V2,並對處理空間37內供給作為反應氣體的NH3氣體。此處,環狀間隙38之間隙寬度G1會變成較間隙寬度G2要窄(例如,0.5mm),另外,APC閥42之開合度(第1開合度)也會變成較第2開合度要小。因此,供給至處理空間37內之NH3氣體會被封入在處理空間37內,如圖6所示,使處理空間37內的壓力上升。藉此,所供給之NH3氣體不會立刻被排
出,而能使反應氣體分子與基板W之構造體200的接觸頻率增加。另外,如圖7(c)所示,能將反應氣體供給至複雜的構造體200深處,而能與吸附在構造體200表面之原料氣體分子反應。
步驟S9中,控制裝置6會開始使APC閥42之開合度成為第2開合度的開啟動作。
步驟S10中,控制裝置6會關閉開閉閥V2。另外,會控制升降機構24而開始使基板載置台2往第2處理位置(參照圖2)移動(下降)的下降動作。
步驟S11中,控制裝置6會開啟開閉閥V5,V6,並對處理空間37內供給N2氣體(圖5中以Flash N2表示)。此時,由於N2氣體係在暫時儲藏在緩衝槽T5,T6後才被供給至處理容器1內,因此可供給較大的流量。另外,環狀間隙38之間隙寬度會變成較間隙寬度G1要寬,另外,APC閥42之開合度(第2開合度)也會變成較第1開合度要大。藉此,如圖7(d)所示,會快速吹淨處理空間37之反應生成物(NH4Cl氣體、HCl氣體)與剩餘的NH3氣體等。此外,圖5中,快速吹淨雖圖示為在APC閥42之開合度的開啟動作結束後,於基板載置台2的下降動作中開始,但並不限於此。
步驟S12中,控制裝置6會關閉開閉閥V5,V6。另外,控制裝置6會使質流控制器M3,M4之流量(載體N2氣體之流量)變成較反應氣體供給時(步驟S8,S9)、快速吹淨時(步驟S11)要小。另外,環狀間隙38之間隙寬度G2會變成較間隙寬度G1要寬(例如,6mm),另外,APC閥42之開合度(第2開合度)也會變成較第1開合度要大。因此,便能使從處理空間37往真空泵44之排氣流導變小,如圖6所示,使處理空間37內之壓力成為低壓(圖6中以low pressure表示)。藉此,如
圖7(d)所示,便能夠輕易排出構造體200內之反應生成物(NH4Cl氣體、HCl氣體)、剩餘的NH3氣體、N2氣體等。
步驟S13中,控制裝置6會控制升降機構24而開始使基板載置台2往第1處理位置(參照圖1)移動(上升)的上升動作。藉由上述步驟S1~S13的處理,便結束ALD程序的1個循環。
步驟S14中,控制裝置6會判定既定循環數是否結束。在既定循環數未結束時(S14,否),則直至結束前會反覆步驟S1~S13。在既定循環數結束時(S14,是),則結束處理。
此外,圖5所示之範例中,雖說明了連續地供給載體N2氣體,具體而言,係在低壓工序時(S5,S6,S12,S13)降低載體N2氣體之供給量,但並不限於此。圖8係說明氣體供給、間隙寬度、APC開合度之控制的另一例之時間表。例如,如圖8所示之另一例,也可為連續地供給載體N2氣體,具體而言,係定量供給載體N2氣體之構成。換言之,低壓工序(S5,S6,S12,S13)中載體N2氣體之供給量也可為與吸附工序(S2)及/或反應工序(S8,S9)中載體N2氣體之供給量相同。圖8所示之另一例中,係藉由控制APC開合度,而在低壓工序中使處理空間37內之壓力成為低壓。
另外,雖已說明進行環狀間隙38之間隙寬度的控制(基板載置台2之升降)及APC閥42之開合度調整的兩者,但並不限於此。例如,也可為進行任一者。
圖9(a)係顯示原料氣體供給量與階段覆蓋率之關係的圖表之一例。縱軸係表示階段覆蓋率,橫軸係表示原料氣體供給量。如圖9(a)所示,原料氣體供給量越是增加,則階段覆蓋率也會上升。相對於此,根據本實施形態之
基板處理裝置100,藉由使吸附工序中環狀間隙38之間隙寬度變小,且使APC閥42之開合度變小,而能夠提升原料氣體之分壓。藉由提升原料氣體之分壓,便能使處理空間37內之原料氣體的量增加。藉此,如圖9(a)所示,便能使階段覆蓋率提升。
圖9(b)係顯示低壓工序時(步驟S5,S6,S12,S13)之壓力與階段覆蓋率之關係的圖表之一例。縱軸係表示階段覆蓋率,橫軸係表示壓力(右邊為0Torr,越往左則壓力越大)。如圖9(b)所示,低壓工序時的壓力越低,則階段覆蓋率也會提升。例如,在吹淨原料氣體之工序中,未反應之原料氣體殘留在構造體200內之入口附近時,在構造體200內之入口側的成膜會較內側先進行,而將構造體200封閉。因此,階段覆蓋率會降低。另外,吹淨反應氣體時也是相同。根據本實施形態之基板處理裝置100,藉由使吹淨工序中環狀間隙38之間隙寬度變大,且使APC閥42之開合度變大,便能使流導降低,而能使壓力降低。另外,藉由降低載體N2氣體之供給量,而能使壓力降低。藉此,如圖9(b)所示,能使階段覆蓋率提升。
圖10係顯示間隙距離與膜厚之關係的圖表之一例。此處,係固定間隙寬度而以既定循環進行成膜。結果係以黑色四角標記(參考)表示。如圖10所示,在間隙寬度狹窄的區域(0.5mm~2mm)中,可確認到膜厚增加。亦即,根據本實施形態之基板處理裝置100,藉由累積原料氣體,便能改善原料氣體的使用效率。
此外,針對0.5mm及6.0mm,使吹淨時間相較於以黑色四角標記表示之參考吹淨時間(與步驟S3,S10對應之N2吹淨0.1秒,與步驟S4,S11對應之快速吹淨0.2秒)更為延長之情形,係以黑色圓標記(N2吹淨0.4秒,快速吹淨0.5秒)、
白色圓標記(N2吹淨0.7秒,快速吹淨0.8秒)表示。假設起因於在間隙寬度狹窄的區域中產生原料氣體之吹淨不足,且在間隙寬度寬廣的區域中未產生原料氣體之吹淨不足,而在間隙寬度狹窄的區域中產生膜厚增加,則可認為在延長吹淨時間的情形,會在間隙寬度狹窄的區域中使膜厚大幅減少,而在間隙寬度寬廣的區域中則膜厚的減少會變小。然而,如圖10所示,在間隙寬度0.5mm及6.0mm中,顯示出相同的膜厚減少傾向。亦即,可確認到間隙寬度狹窄的區域中的膜厚增加並非起因於原料氣體的吹淨不足。換句話說,可確認到改善了原料氣體的使用效率。
圖11係顯示各間隙寬度中壓力變化的圖表之一例。此處,係顯示將環狀間隙38之間隙寬度固定在個別的值且反覆對處理空間37之氣體供給與排出時的壓力變化。縱軸係表示壓力,橫軸係表示時間。圖11(a)係顯示處理空間37內之壓力變化,圖11(b)係顯示排氣管13內之壓力變化。
圖11(a)所示之構成例中,可確認到在間隙寬度為2mm以下之區域,壓力會因間隙寬度的變更而上升,亦即會進行原料氣體的累積。另一方面,在間隙寬度為3mm以上之區域,幾乎觀察不到間隙寬度的變更所致之壓力上升。如此,第1處理位置係根據圖11(a)所示之壓力變動而設定在會進行原料氣體的累積之位置,換句話說是壓力會因間隙寬度的變更而上升之位置(例如,間隙寬度成為0.5mm之位置)。另外,第2處理位置係根據圖11(a)所示之壓力變動而設定在不會進行原料氣體的累積之位置,換句話說是壓力會因間隙寬度的變更而上升較小之位置(例如,間隙寬度成為6.0mm之位置)。另外,如圖11(b)所示,排氣管13內之壓力不會取決於間隙寬度,而幾乎觀察不到變化。
以上,根據本實施形態之基板處理裝置100,可提升在基板W成膜時的階段覆蓋率。
另外,藉由使吸附工序(S2)及/或反應工序(S8,S9)中間隙寬度變窄(2.0mm以下),而進行原料氣體及/或反應氣體的累積,便能改善原料氣體及/或反應氣體的使用效率。另外,階段覆蓋率也會提升。另外,藉由使吹淨原料氣體或反應氣體的工序(S4~S6,S11~S13)中間隙寬度變寬(3.0mm以上),能較佳地吹淨原料氣體或反應氣體。另外,階段覆蓋率也會提升。
以上,雖已說明基板處理裝置100所致之本實施形態的成膜方法,但本揭露並不限於上述實施形態等,在申請專利範圍所記載之本揭露的要旨的範圍內,可進行各種變形、改良。
雖已說明使TiN膜成膜的情形,但成膜之膜的種類並不限於此。另外,原料氣體、反應氣體等氣體的種類也不限於上述說明者。
另外,本實施形態之基板處理裝置100雖係以熱ALD裝置之情形為例來說明,但並不限於此,例如也可適用於電漿ALD裝置。
S1:驅動台座/閥
S2:供給原料氣體
S3:驅動台座/閥
S4:快速吹淨
S5:低壓
S6:開始上升台座
S7:開始驅動閥
S8:供給還原氣體
S9:開始驅動閥
S10:開始下降台座
S11:快速吹淨
S12:低壓
S13:開始上升台座
Claims (11)
- 一種基板處理方法,係基板處理裝置之基板處理方法,該基板處理裝置具備:處理容器,係具有載置基板且可升降的載置台;構件,係在與該載置台之間形成處理空間;原料氣體供給部,係對該處理容器內供給原料氣體;反應氣體供給部,係對該處理容器內供給反應氣體;以及排氣部,係具有可調整開合度的壓力調整閥,會將該處理容器內的氣體排出;該基板處理方法具有反覆下述工序的工序:吸附工序,係將原料氣體供給至該處理容器內,使其吸附於該基板;第1吹淨工序,係將該吸附工序之剩餘的原料氣體排出;反應工序,係將反應氣體供給至該處理容器內,使其與該原料氣體反應;以及第2吹淨工序,係將該反應工序之剩餘的反應氣體排出;該吸附工序及/或該反應工序中該載置台與該構件之間之間隙的寬度及/或該壓力調整閥的開合度,較該第1吹淨工序及/或該第2吹淨工序中該載置台與該構件之間之間隙的寬度及/或該壓力調整閥的開合度要小。
- 如申請專利範圍第1項之基板處理方法,其中該第1吹淨工序及/或該第2吹淨工序具有低壓工序,係使該處理空間內的壓力較該吸附工序及/或該反應工序要低。
- 如申請專利範圍第2項之基板處理方法,其中該第1吹淨工序及/或該第2吹淨工序會在該吹淨氣體的供給及該吹淨氣體的停止後實施該低壓工序。
- 如申請專利範圍第2或3項之基板處理方法,其中該基板處理裝置進一步具備供給載體氣體的載體氣體供給部;在該吸附工序、該第1吹淨工序、該反應工序、該第2吹淨工序中會連續地供給載體氣體。
- 如申請專利範圍第4項之基板處理方法,其中在該低壓工序的該載體氣體之供給量會較在該吸附工序及/或該反應工序的該載體氣體之供給量要少。
- 如申請專利範圍第4項之基板處理方法,其中在該低壓工序的該載體氣體之供給量會與在該吸附工序及/或該反應工序的該載體氣體之供給量相同。
- 如申請專利範圍第1至6項中任一項之基板處理方法,其中該載置台與該構件之間之間隙的寬度係藉由使該載置台升降來控制。
- 如申請專利範圍第1至7項中任一項之基板處理方法,其中該構件是與該載置台對向之噴淋板。
- 如申請專利範圍第8項之基板處理方法,其中在該噴淋板之周緣部具有環狀凸部;在該載置台之周緣部具有蓋構件;該基板處理方法會控制該環狀凸部的下面與該蓋構件的上面之間的寬度。
- 如申請專利範圍第1至9項中任一項之基板處理方法,其中該吸附工序及/或該反應工序中,該載置台與該構件之間之間隙的寬度為2.0mm以下。
- 一種基板處理裝置,係具備:處理容器,係具有載置基板且可升降的載置台;構件,係與該載置台的載置面對向配置,而在與該載置台之間形成處理空間;原料氣體供給部,係對該處理容器內供給原料氣體;反應氣體供給部,係對該處理容器內供給反應氣體;排氣部,係具有可調整開合度的壓力調整閥,會將該處理容器內的氣體排出;以及控制部;該控制部係以下述方式進行控制,而執行反覆下述工序的工序:吸附工序,係將原料氣體供給至該處理容器內,使其吸附於該基板;第1吹淨工序,係將該吸附工序的剩餘的原料氣體排出;反應工序,係將反應氣體供給至該處理容器內,使其與該原料氣體反應;以及第2吹淨工序,係將該反應工序之剩餘的反應氣體排出;該吸附工序及/或該反應工序中該載置台與該構件之間之間隙的寬度及/或該壓力調整閥的開合度,係較該第1吹淨工序及/或該第2吹淨工序中該載置台與該構件之間之間隙的寬度及/或該壓力調整閥的開合度要小。
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