JP7300898B2 - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- JP7300898B2 JP7300898B2 JP2019108977A JP2019108977A JP7300898B2 JP 7300898 B2 JP7300898 B2 JP 7300898B2 JP 2019108977 A JP2019108977 A JP 2019108977A JP 2019108977 A JP2019108977 A JP 2019108977A JP 7300898 B2 JP7300898 B2 JP 7300898B2
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- 239000000758 substrate Substances 0.000 title claims description 142
- 238000003672 processing method Methods 0.000 title claims description 17
- 239000007789 gas Substances 0.000 claims description 206
- 238000010926 purge Methods 0.000 claims description 67
- 239000002994 raw material Substances 0.000 claims description 37
- 239000012495 reaction gas Substances 0.000 claims description 31
- 238000001179 sorption measurement Methods 0.000 claims description 19
- 239000012159 carrier gas Substances 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000001276 controlling effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 25
- 230000008569 process Effects 0.000 description 20
- 230000007246 mechanism Effects 0.000 description 15
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 230000003028 elevating effect Effects 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910003074 TiCl4 Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
本実施形態に係る基板処理装置100について、図1及び図2を用いて説明する。図1及び図2は、本実施形態に係る基板処理装置100の断面模式図の一例である。
次に、基板処理装置100による成膜処理について、図3を用いて説明する。図3は、本実施形態に係る基板処理装置100における成膜処理の一例を示すフローチャートである。
1 処理容器
2 基板載置台(載置台)
3 シャワーヘッド(部材)
4 排気部
5 処理ガス供給機構(原料ガス供給部、反応ガス供給部、キャリアガス供給部)
6 制御装置
22 カバー部材
24 昇降機構
32 シャワープレート(部材)
34 環状突起部(環状凸部)
37 処理空間
38 環状隙間
41 排気配管
42 APCバルブ
43 開閉バルブ
44 真空ポンプ
100 基板処理装置
L1 原料ガス供給ライン(原料ガス供給部)
L2 反応ガス供給ライン(反応ガス供給部)
L3 第1の連続N2ガス供給ライン(キャリアガス供給部)
L4 第2の連続N2ガス供給ライン(キャリアガス供給部)
L5 第1のフラッシュパージライン
L6 第2のフラッシュパージライン
Claims (9)
- 基板を載置する昇降可能な載置台を有する処理容器と、
前記載置台との間に処理空間を形成する部材と、
前記処理容器内へ原料ガスを供給する原料ガス供給部と、
前記処理容器内へ反応ガスを供給する反応ガス供給部と、
開度調整可能な圧力調整弁を有し、前記処理容器内のガスを排気する排気部と、を備える基板処理装置の基板処理方法であって、
前記処理容器内に原料ガスを供給して前記基板に吸着させる吸着工程と、
前記吸着工程の余剰な原料ガスを排気する第1パージ工程と、
前記処理容器内に反応ガスを供給して前記原料ガスと反応させる反応工程と、
前記反応工程の余剰な反応ガスを排気する第2パージ工程と、を繰り返す工程と、を有し、
前記吸着工程及び/又は前記反応工程における前記載置台と前記部材との間の隙間の幅及び/又は前記圧力調整弁の開度は、前記第1パージ工程及び/又は前記第2パージ工程における前記載置台と前記部材との間の隙間の幅及び/又は前記圧力調整弁の開度よりも小さく、
前記第1パージ工程及び/又は前記第2パージ工程は、
前記処理空間内の圧力を前記吸着工程及び/又は前記反応工程よりも低圧にする低圧工程を有し、
パージガスの供給及び該パージガスの停止後に、前記低圧工程が実施される、
基板処理方法。 - 前記基板処理装置は、
キャリアガスを供給するキャリアガス供給部を更に備え、
前記吸着工程、前記第1パージ工程、前記反応工程、前記第2パージ工程において、キャリアガスを連続的に供給する、
請求項1に記載の基板処理方法。 - 前記低圧工程における前記キャリアガスの供給量は、前記吸着工程及び/又は前記反応工程における前記キャリアガスの供給量よりも少ない、
請求項2に記載の基板処理方法。 - 前記低圧工程における前記キャリアガスの供給量は、前記吸着工程及び/又は前記反応工程における前記キャリアガスの供給量と同じである、
請求項2に記載の基板処理方法。 - 前記載置台と前記部材との間の隙間の幅は、前記載置台を昇降することで制御する、
請求項1乃至請求項4のいずれか1項に記載の基板処理方法。 - 前記部材は、前記載置台に対向するシャワープレートである、
請求項1乃至請求項5のいずれか1項に記載の基板処理方法。 - 前記シャワープレートは、その周縁部に環状凸部を有し、
前記載置台は、その周縁部にカバー部材を有し、
前記環状凸部の下面と前記カバー部材の上面との幅を制御する、
請求項6に記載の基板処理方法。 - 前記吸着工程及び/又は前記反応工程における前記載置台と前記部材との間の隙間の幅は、2.0mm以下である、
請求項1乃至請求項7のいずれか1項に記載の基板処理方法。 - 基板を載置する昇降可能な載置台を有する処理容器と、
前記載置台の載置面に対向して配置され、前記載置台との間に処理空間を形成する部材と、
前記処理容器内へ原料ガスを供給する原料ガス供給部と、
前記処理容器内へ反応ガスを供給する反応ガス供給部と、
開度調整可能な圧力調整弁を有し、前記処理容器内のガスを排気する排気部と、
制御部と、を備え、
前記制御部は、
前記処理容器内に原料ガスを供給して前記基板に吸着させる吸着工程と、
前記吸着工程の余剰な原料ガスを排気する第1パージ工程と、
前記処理容器内に反応ガスを供給して前記原料ガスと反応させる反応工程と、
前記反応工程の余剰な反応ガスを排気する第2パージ工程と、を繰り返す工程と、を実行し、
前記吸着工程及び/又は前記反応工程における前記載置台と前記部材との間の隙間の幅及び/又は前記圧力調整弁の開度は、前記第1パージ工程及び/又は前記第2パージ工程における前記載置台と前記部材との間の隙間の幅及び/又は前記圧力調整弁の開度よりも小さくなるように制御し、
前記第1パージ工程及び/又は前記第2パージ工程は、
前記処理空間内の圧力を前記吸着工程及び/又は前記反応工程よりも低圧にする低圧工程を有し、
パージガスの供給及び該パージガスの停止後に、前記低圧工程が実施される、
基板処理装置。
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