TW202038364A - Substrate processing apparatus and substrate processing method capable of shortening a total length of a substrate processing apparatus - Google Patents

Substrate processing apparatus and substrate processing method capable of shortening a total length of a substrate processing apparatus Download PDF

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TW202038364A
TW202038364A TW108145726A TW108145726A TW202038364A TW 202038364 A TW202038364 A TW 202038364A TW 108145726 A TW108145726 A TW 108145726A TW 108145726 A TW108145726 A TW 108145726A TW 202038364 A TW202038364 A TW 202038364A
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substrate
unit
conveying
processing apparatus
line
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TW108145726A
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Chinese (zh)
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梶原拓伸
坂井光広
八尋俊一
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)

Abstract

An object of the present invention is to provide a technique of shortening a total length of a substrate processing apparatus. To achieve the object, the substrate processing apparatus according to an embodiment comprises a preprocessing line, an application line, a development processing line, a first transport part, a second transport part and a third transport part. The preprocessing line is provided for preprocessing the substrate. The application line is arranged in parallel to the preprocessing line, and applies a processing liquid to the preprocessed substrate. The development processing line is arranged above or below the preprocessing line to perform development processing on the substrate coated with the processing liquid. The first transport part is provided between the preprocessing line and the application line, and transports the substrate from the preprocessing line to the application line. The second transport part is arranged in series with respect to the first transport part, and transports the substrate to the development processing line through an external apparatus. The third transport part is arranged in series with respect to the first transport part, and transports the substrate from the development processing line.

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本揭示關於基板處理裝置及基板處理方法。This disclosure relates to a substrate processing apparatus and a substrate processing method.

專利文獻1揭示邊沿著第1搬運線搬運基板，邊在基板形成光阻膜，於基板被曝光之後，邊沿著第2搬運線搬運基板，邊對基板進行顯像處理。 [先前技術文獻] [專利文獻]Patent Document 1 discloses that a photoresist film is formed on the substrate while conveying the substrate along the first conveying line, and after the substrate is exposed, the substrate is conveyed along the second conveying line to perform development processing on the substrate. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2007-158253號公報[Patent Document 1] JP 2007-158253 A

[發明所欲解決之問題][The problem to be solved by the invention]

本揭示係提供縮短基板處理裝置之全長的技術。 [用以解決問題之技術手段]The present disclosure provides a technique for shortening the overall length of the substrate processing device. [Technical means to solve the problem]

本揭示之一態樣所涉及的基板處理裝置具備前處理線、塗佈線、顯像處理線、第1搬運部、第2搬運部和第3搬運部。前處理線係對基板進行前處理。塗佈線係相對於前處理線被並聯配置，對被進行前處理後的基板塗佈處理液。顯像處理線係被配置在前處理線之上方或下方，對被塗佈處理液後的基板進行顯像處理。第1搬運部被設置在前處理線和塗佈線之間，將基板從前處理線搬運至塗佈線。第2搬運部相對於第1搬運部被串聯配置，將基板經由外部裝置搬運至顯像處理線。第3搬運部相對於第1搬運部被串聯配置，從顯像處理線搬運基板。 [發明之效果]The substrate processing apparatus according to one aspect of the present disclosure includes a pre-processing line, a coating line, a development processing line, a first conveying unit, a second conveying unit, and a third conveying unit. The pre-processing line is for pre-processing the substrate. The coating line is arranged in parallel with respect to the pretreatment line, and applies the treatment liquid to the pretreatment substrate. The development processing line is arranged above or below the pre-processing line to perform development processing on the substrate after the processing liquid has been applied. The first transport part is provided between the pre-processing line and the coating line, and transports the substrate from the pre-processing line to the coating line. The second conveyance section is arranged in series with the first conveyance section, and conveys the substrate to the development processing line via an external device. The third conveyance section is arranged in series with respect to the first conveyance section, and conveys the substrate from the development processing line. [Effects of Invention]

若藉由本揭示，可以縮短基板處理裝置之全長。According to the present disclosure, the total length of the substrate processing apparatus can be shortened.

以下，參照附件圖面，詳細說明本案揭示的基板處理裝置及基板處理方法之實施型態。另外，不藉由以下所示的實施型態限定所揭示的基板處理裝置及基板處理方法。Hereinafter, referring to the attached drawings, the implementation type of the substrate processing apparatus and the substrate processing method disclosed in this case will be described in detail. In addition, the disclosed substrate processing apparatus and substrate processing method are not limited by the embodiments shown below.

在以下參照的各圖面中，為了容易理解說明，規定互相正交的X軸方向、Y軸方向及Z軸方向，表示將Z軸正方向設為垂直向上之方向的直角座標系統。X軸方向及Y軸方向為水平方向。In the drawings referred to below, for ease of understanding and description, the X-axis, Y-axis, and Z-axis directions that are orthogonal to each other are defined, and the positive direction of the Z-axis is set to the perpendicular upward direction in a rectangular coordinate system. The X-axis direction and the Y-axis direction are horizontal directions.

再者，在此，規定將X軸正方向設為前方，將X軸負方向設為後方的前後方向，規定將Y軸負方向設為左方，將Y軸正方向設為右方的左右方向。再者，規定將Z軸正方向設為上方，將Z軸負方向設為下方的上下方向。Furthermore, here, it is stipulated that the positive direction of the X axis is set to the front, the negative direction of the X axis is set to the back and forth direction, the negative direction of the Y axis is set to the left, and the positive direction of the Y axis is set to the right and left. direction. Furthermore, it is stipulated that the positive direction of the Z-axis is set to be upward, and the negative direction of the Z-axis is set to be the up-down direction of the bottom.

(第1實施型態) ＜全體構成＞ 針對第1實施型態所涉及的基板處理裝置1，參照圖1及圖2進行說明。圖1為表示第1實施型態所涉及之基板處理裝置1之概略構成的俯視圖。圖2為表示第1實施型態所涉及之基板處理裝置1之一部分之概略構成的左側方圖。(First implementation type) <Overall composition> The substrate processing apparatus 1 according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus 1 according to the first embodiment. Fig. 2 is a left side view showing a schematic configuration of a part of the substrate processing apparatus 1 according to the first embodiment.

基板處理裝置1具備卡匣站2、第1處理線3(前處理線之一例)、第2處理線4(塗佈線之一例)、第3處理線5(顯像處理線之一例)。再者，基板處理裝置1具備減壓乾燥單元(DP)(載置部、減壓乾燥部之一例)6，和第1熱處理單元7(載置部、熱處理部之一例)，和第2熱處理單元8。再者，基板處理裝置1具備包含第2搬運部9B之介面站9、第1搬運部10、第3搬運部11和控制裝置12。The substrate processing apparatus 1 includes a cassette station 2, a first processing line 3 (an example of a preprocessing line), a second processing line 4 (an example of a coating line), and a third processing line 5 (an example of a development processing line). Furthermore, the substrate processing apparatus 1 includes a reduced-pressure drying unit (DP) (an example of a placement section and a reduced-pressure drying section) 6, a first heat treatment unit 7 (an example of a placement section and a heat treatment section), and a second heat treatment Unit 8. Furthermore, the substrate processing apparatus 1 includes an interface station 9 including a second conveying unit 9B, a first conveying unit 10, a third conveying unit 11, and a control device 12.

在卡匣站2載置複數收容玻璃基板S(以下，稱為「基板S」)的卡匣C。卡匣站2具備能夠載置複數卡匣C之載置台13、在卡匣C和第1處理線3之間，及後述檢查單元(IP)65和卡匣C之間進行基板S之搬運的搬運裝置14。另外，基板S為矩形狀。再者，即使卡匣站2作為外部裝置被設置亦可。即是，基板處理裝置1即使為不含有卡匣站2之構成亦可。A plurality of cassettes C containing glass substrates S (hereinafter referred to as "substrate S") are placed in the cassette station 2. The cassette station 2 is provided with a mounting table 13 capable of placing a plurality of cassettes C, and a board S is transported between the cassette C and the first processing line 3, and between the inspection unit (IP) 65 and cassette C described later Transporting device 14. In addition, the substrate S has a rectangular shape. Furthermore, even if the cassette station 2 is provided as an external device. That is, the substrate processing apparatus 1 may have a configuration that does not include the cassette station 2.

搬運裝置14具備搬運臂14a。搬運臂14a能夠朝水平方向(前後方向及左右方向)及垂直方向移動。再者，搬運裝置14能夠以垂直軸為中心旋轉。The conveying device 14 includes a conveying arm 14a. The transport arm 14a can move in the horizontal direction (front-rear direction and left-right direction) and the vertical direction. Furthermore, the conveying device 14 can rotate around the vertical axis.

第1處理線3係對被搬運至第2處理線4之基板S進行前處理。具體而言，第1處理線3包含準分子UV照射單元(e-UV)20、擦淨洗淨單元(SCR)21、預熱單元(PH)22、黏著單元(AD)23和第1冷卻單元(COL)24。The first processing line 3 performs preprocessing on the substrate S conveyed to the second processing line 4. Specifically, the first processing line 3 includes an excimer UV irradiation unit (e-UV) 20, a scrubbing unit (SCR) 21, a preheating unit (PH) 22, an adhesion unit (AD) 23, and a first cooling unit Unit (COL) 24.

在第1處理線3中，單元20～24係在從卡匣站2朝向曝光系統60之曝光裝置61的方向被排列配置。具體而言，單元20～24係依準分子UV照射單元20、擦淨洗淨單元21、預熱單元22、黏著單元23及第1冷卻單元24之順序沿著X軸正方向被配置。第1處理線3被配置在第3處理線5之上方。另外，即使第1處理線3被配置在第3處理線5之下方亦可。In the first processing line 3, the units 20 to 24 are arranged side by side in the direction from the cassette station 2 to the exposure device 61 of the exposure system 60. Specifically, the units 20 to 24 are arranged along the positive X-axis direction in the order of the excimer UV irradiation unit 20, the wiping cleaning unit 21, the preheating unit 22, the adhesion unit 23, and the first cooling unit 24. The first processing line 3 is arranged above the third processing line 5. In addition, even if the first processing line 3 is arranged below the third processing line 5.

準分子UV照射單元20係從發出紫外光之紫外光燈對基板S照射紫外光，除去附著於基板S上之有機物。The excimer UV irradiation unit 20 irradiates the substrate S with ultraviolet light from an ultraviolet lamp that emits ultraviolet light to remove the organic matter attached to the substrate S.

擦淨洗淨單元21係邊對有機物被除去後的基板S供給洗淨液(例如，脫離子水(DIW))，邊藉由刷具等之洗淨構件洗淨基板S之表面。再者，擦淨洗淨單元21係藉由鼓風機等使洗淨後的基板S乾燥。The wiping cleaning unit 21 supplies a cleaning solution (for example, deionized water (DIW)) to the substrate S after the organic matter has been removed, and cleans the surface of the substrate S with a cleaning member such as a brush. In addition, the wiping washing unit 21 dries the washed substrate S by a blower or the like.

預熱單元22係加熱藉由擦淨洗淨單元21被乾燥的基板S，使基板S進一步乾燥。The preheating unit 22 heats the substrate S dried by the wiping cleaning unit 21 to further dry the substrate S.

黏著單元23係對被乾燥的基板S噴吹六甲基二矽烷(HMDS)，對基板S進行疏水處理。The adhesion unit 23 sprays hexamethyldisilane (HMDS) on the dried substrate S to perform hydrophobic treatment on the substrate S.

第1冷卻單元24係對被進行疏水處理後之基板S噴吹冷風而冷卻基板S。藉由第1冷卻單元24被冷卻後的基板S被搬運至相對於第1冷卻單元24在X軸正方向側被鄰接配置的搬出部25。另外，搬出部25即使被含在第1冷卻單元24亦可。The first cooling unit 24 cools the substrate S by blowing cold air to the substrate S after the water repellent treatment. The substrate S cooled by the first cooling unit 24 is conveyed to the unloading section 25 arranged adjacent to the first cooling unit 24 on the positive X-axis side. In addition, the carry-out part 25 may be included in the first cooling unit 24.

在第1處理線3中，基板S沿著X軸正方向被平流搬運。例如，基板S係藉由滾子搬運機構15被搬運。滾子搬運機構15係藉由以驅動裝置(無圖示)使複數滾子15a旋轉，搬運基板S。滾子搬運機構15係在圖2中記載一部分，其他省略。平流搬運係指在基板S被保持水平之狀態，或是傾斜於Y軸方向之狀態，沿著特定方向，例如X軸方向被搬運。另外，即使基板S藉由輸送帶搬運機構等被平流搬運亦可。In the first processing line 3, the substrate S is transported advection along the positive X-axis direction. For example, the substrate S is transported by the roller transport mechanism 15. The roller conveyance mechanism 15 conveys the substrate S by rotating the plurality of rollers 15a with a driving device (not shown). The roller transport mechanism 15 is partly shown in FIG. 2 and the others are omitted. Advection conveyance refers to a state in which the substrate S is kept horizontal or inclined to the Y-axis direction, and is conveyed along a specific direction, such as the X-axis direction. In addition, the substrate S may be transported advection by a conveyor belt transport mechanism or the like.

在第1處理線3中，在基板S之長邊(長度方向)與搬運方向(X軸正方向)成為平行之狀態下基板S被平流搬運。在以下中，將在基板S之長邊與基板S之搬運方向成為平行之狀態被搬運之情形稱為「長邊流動搬運」。再者，將在基板S之短邊與基板S之搬運方向成為平行之狀態被搬運之情形稱為「短邊流動搬運」。In the first processing line 3, the substrate S is transported advection in a state where the long side (longitudinal direction) of the substrate S is parallel to the transport direction (the positive X-axis direction). In the following, the case where the long side of the substrate S and the transport direction of the substrate S are transported in a parallel state is referred to as "long-side flow transport". In addition, the case where the short side of the substrate S is conveyed in a state parallel to the conveying direction of the substrate S is called "short-side flow conveyance".

第2處理線4係在基板S塗佈光阻液(處理液之一例)，進行形成光阻膜的形成處理。第2處理線4相對於第1處理線3被並聯配置。具體而言，第2處理線4被配置在第1處理線3之左方。即是，第1處理線3及第2處理線4在左右方向被排列配置。在第2處理線4中，藉由第1處理線3之第1冷卻單元24被冷卻後的基板S藉由第1搬運部10被搬運。In the second processing line 4, a photoresist liquid (an example of a processing liquid) is applied to the substrate S, and a photoresist film is formed. The second processing line 4 is arranged in parallel with the first processing line 3. Specifically, the second processing line 4 is arranged to the left of the first processing line 3. That is, the first processing line 3 and the second processing line 4 are arranged side by side in the left-right direction. In the second processing line 4, the substrate S cooled by the first cooling unit 24 of the first processing line 3 is transported by the first transport unit 10.

第2處理線4包含光阻塗佈單元(CT)27。光阻塗佈單元27係在基板S上塗佈光阻液，在基板S上形成光阻膜。The second processing line 4 includes a photoresist coating unit (CT) 27. The photoresist coating unit 27 coats the photoresist liquid on the substrate S, and forms a photoresist film on the substrate S.

在第2處理線4中，基板S沿著X軸負方向被平流搬運。例如，基板S係藉由浮起式之搬運機構(無圖示)被搬運。浮起式之搬運機構係例如在左右方向之兩端從下方支持基板S，朝向基板S從下方噴吹壓縮空氣而將基板S保持水平，並且使基板S移動。In the second processing line 4, the substrate S is transported advection along the negative X-axis direction. For example, the substrate S is transported by a floating transport mechanism (not shown). The floating transport mechanism supports the substrate S from below at both ends in the left-right direction, blows compressed air toward the substrate S from below to keep the substrate S horizontal, and moves the substrate S.

另外，即使在第2處理線4中，塗佈光阻液之處附近的基板S之搬運使用浮起式之搬運機構，在其他處，基板S之搬運使用例如滾子搬運機構15亦可。在第2處理線4中，基板S被長邊流動搬運。再者，即使在第2處理線4中，在基板S被載置於載置台之狀態被搬運，形成光阻膜亦可。In addition, even in the second processing line 4, the substrate S near the place where the photoresist liquid is applied may be transported using a floating transport mechanism, and in other locations, the substrate S may be transported using, for example, a roller transport mechanism 15. In the second processing line 4, the substrate S is transported by the long-side flow. Furthermore, even in the second processing line 4, the substrate S may be transported while being placed on the mounting table to form a photoresist film.

第1搬運部10被配置在第1處理線3和第2處理線4之間。第1搬運部10具備能夠在水平方向伸縮之搬運臂(SA)10A。再者，第1搬運部10能夠進行沿著前後方向的移動、沿著上下方向的移動及以垂直軸為中心的旋轉。The first transport unit 10 is arranged between the first processing line 3 and the second processing line 4. The 1st conveyance part 10 is equipped with 10 A of conveyance arms (SA) which can expand and contract in a horizontal direction. Furthermore, the first conveyance unit 10 can perform movement in the front-rear direction, movement in the up-down direction, and rotation around the vertical axis.

第1搬運部10係進行將基板S從第1處理線3搬運至第2處理線4的第1搬運處理(第1搬運工程之一例)。再者，第1搬運部10係進行將基板S從第2處理線4搬運至減壓乾燥單元6的第2搬運處理。再者，第1搬運部10係進行將基板S從減壓乾燥單元6搬運至第1熱處理單元7的第3搬運處理。再者，第1搬運部10進行第4搬運處理(第2搬運工程之一例)之一部分。具體而言，第1搬運部10將基板S從第1熱處理單元7搬運至介面站9，作為第4搬運處理之一部分。The first transport unit 10 performs a first transport process (an example of the first transport process) for transporting the substrate S from the first processing line 3 to the second processing line 4. In addition, the 1st conveyance part 10 performs the 2nd conveyance process which conveys the board|substrate S from the 2nd process line 4 to the reduced pressure drying unit 6. In addition, the first conveyance unit 10 performs a third conveyance process for conveying the substrate S from the reduced-pressure drying unit 6 to the first heat treatment unit 7. Furthermore, the first conveyance unit 10 performs a part of the fourth conveyance process (an example of the second conveyance process). Specifically, the first transport unit 10 transports the substrate S from the first heat treatment unit 7 to the interface station 9 as a part of the fourth transport process.

減壓乾燥單元6相對於第2處理線4被串聯配置。具體而言，減壓乾燥單元6相對於第2處理線4在X軸負方向側被鄰接配置。在減壓乾燥單元6，藉由第2處理線4形成光阻膜之基板S藉由第1搬運部10被搬運。The reduced-pressure drying unit 6 is arranged in series with respect to the second processing line 4. Specifically, the reduced-pressure drying unit 6 is arranged adjacent to the second processing line 4 on the negative X-axis side. In the reduced-pressure drying unit 6, the substrate S on which the photoresist film is formed by the second processing line 4 is conveyed by the first conveying unit 10.

減壓乾燥單元6對形成有光阻膜之基板S進行減壓乾燥處理。具體而言，減壓乾燥單元6在減壓氛圍下使被形成在基板S上之光阻膜乾燥。另外，即使減壓乾燥單元6在上下方向配置複數層亦可。The vacuum drying unit 6 performs a vacuum drying process on the substrate S on which the photoresist film is formed. Specifically, the reduced-pressure drying unit 6 dries the photoresist film formed on the substrate S under a reduced-pressure atmosphere. In addition, even if the pressure reduction drying unit 6 arranges a plurality of layers in the vertical direction.

第1熱處理單元7相對於第1搬運部10在X軸負方向側被鄰接配置。在第1熱處理單元7，藉由減壓乾燥單元6被進行減壓乾燥處理後的基板S藉由第1搬運部10被搬運。即是，在第1熱處理單元7藉由第1搬運部10被載置基板S。The first heat treatment unit 7 is arranged adjacent to the first conveying unit 10 on the negative X-axis side. In the first heat treatment unit 7, the substrate S subjected to the reduced-pressure drying process by the reduced-pressure drying unit 6 is transported by the first transport unit 10. That is, the substrate S is placed on the first heat treatment unit 7 by the first conveying unit 10.

第1熱處理單元7係對進行減壓乾燥處理後之基板S進行第1熱處理。在第1熱處理單元7中，包含第1加熱單元(PE/BAKE)30(加熱部之一例)、第2冷卻單元(COL)31(冷卻部之一例)。The first heat treatment unit 7 performs the first heat treatment on the substrate S after the reduced-pressure drying treatment. The first heat treatment unit 7 includes a first heating unit (PE/BAKE) 30 (an example of a heating unit) and a second cooling unit (COL) 31 (an example of a cooling unit).

在第1熱處理單元7中，基板S藉由第1搬運部10被搬入至第2冷卻單元31。再者，在第1熱處理單元7中，基板S藉由第1搬運部10從第2冷卻單元31被搬出。在第1熱處理單元7設置滾子搬運機構、輸送帶搬運機構、搬運臂等之內部搬運機構(無圖示)，可以在第2冷卻單元31和第1加熱單元30之間搬運基板S。In the first heat treatment unit 7, the substrate S is carried into the second cooling unit 31 by the first conveying unit 10. Furthermore, in the first heat treatment unit 7, the substrate S is carried out from the second cooling unit 31 by the first conveying unit 10. The first heat treatment unit 7 is provided with an internal transport mechanism (not shown) such as a roller transport mechanism, a conveyor belt transport mechanism, and a transport arm, and the substrate S can be transported between the second cooling unit 31 and the first heating unit 30.

另外，在第1熱處理單元7中，即使基板S藉由第1搬運部10被搬入至第1加熱單元30亦可。而且，在第1熱處理單元7中，即使將藉由第2冷卻單元31被冷卻後的基板S從第1加熱單元30搬出亦可。In addition, in the first heat treatment unit 7, the substrate S may be carried in to the first heating unit 30 by the first conveying unit 10. Furthermore, in the first heat treatment unit 7, even the substrate S cooled by the second cooling unit 31 may be carried out from the first heating unit 30.

第1加熱單元30加熱被塗佈光阻液後的基板S，即是形成光阻膜，被減壓乾燥後的基板S。光阻膜被乾燥後的基板S藉由內部搬運機構從第2冷卻單元31被搬運至第1加熱單元30。第1加熱單元30加熱基板S，除去光阻膜所含的溶劑等。第1加熱單元30係平板式之加熱單元，在基板S被載置於平板(無圖示)之狀態，藉由加熱平板而加熱基板S。另外，即使第1加熱單元30被設置複數亦可。The first heating unit 30 heats the substrate S coated with the photoresist liquid, that is, the substrate S after the photoresist film is formed and dried under reduced pressure. The substrate S after the photoresist film has been dried is transported from the second cooling unit 31 to the first heating unit 30 by the internal transport mechanism. The first heating unit 30 heats the substrate S to remove the solvent and the like contained in the photoresist film. The first heating unit 30 is a flat plate heating unit, and the substrate S is heated by heating the flat plate in a state where the substrate S is placed on a flat plate (not shown). In addition, the first heating unit 30 may be provided in plural.

第2冷卻單元31冷卻藉由第1加熱單元30被加熱後的基板S。藉由第1加熱單元30被加熱後的基板S藉由內部搬運機構被搬運至第2冷卻單元31。第2冷卻單元31係例如平板式之冷卻單元，並且即使為對基板S噴吹冷風而冷卻基板S亦可。藉由第2冷卻單元31被冷卻後的基板S藉由第1搬運部10被搬出。另外，即使第2冷卻單元31設置複數亦可。The second cooling unit 31 cools the substrate S heated by the first heating unit 30. The substrate S heated by the first heating unit 30 is transferred to the second cooling unit 31 by the internal transfer mechanism. The second cooling unit 31 is, for example, a flat-plate cooling unit, and may cool the substrate S in order to blow cold air to the substrate S. The substrate S cooled by the second cooling unit 31 is carried out by the first conveying unit 10. In addition, the second cooling unit 31 may be provided in plural.

介面站9被配置成相對於第1搬運部10及第2處理線4在X軸正方向側鄰接。具體而言，介面站9被配置在曝光裝置61、第1搬運部10及第2處理線4之間。介面站9具備旋轉台(ROT)9A，和第2搬運部9B。The interface station 9 is arranged so as to be adjacent to the first conveying section 10 and the second processing line 4 on the positive X-axis side. Specifically, the interface station 9 is arranged between the exposure device 61, the first transport unit 10 and the second processing line 4. The interface station 9 includes a rotating table (ROT) 9A and a second conveying unit 9B.

旋轉台9A被配置成相對於第2處理線4在X軸正方向側鄰接。在旋轉台9A，藉由第1熱處理單元7被進行第1熱處理後的基板S藉由第1搬運部10被搬運。The rotating table 9A is arranged to be adjacent to the second processing line 4 on the positive X-axis side. On the turntable 9A, the substrate S subjected to the first heat treatment by the first heat treatment unit 7 is transported by the first transport unit 10.

旋轉台9A係使基板S在水平方向旋轉90度或 -90度。另外，即使旋轉台9A設置調整基板S之溫度的調溫裝置亦可。The rotating table 9A rotates the substrate S 90 degrees in the horizontal direction or -90 degrees. In addition, even if the turntable 9A is provided with a temperature adjustment device that adjusts the temperature of the substrate S.

第2搬運部9B相對於第1搬運部10被串聯配置。具體而言，第2搬運部9B相對於第1搬運部10在X軸正方向側被鄰接配置。第2搬運部9B具備能夠在水平方向伸縮之搬運臂(SA)9C。再者，第2搬運部9B能夠進行沿著上下方向的移動及以垂直軸為中心的旋轉。The second conveying unit 9B is arranged in series with respect to the first conveying unit 10. Specifically, the second conveying unit 9B is arranged adjacent to the first conveying unit 10 on the positive X-axis side. The 2nd conveyance part 9B is equipped with 9 C of conveyance arms (SA) which can expand and contract in a horizontal direction. In addition, the second conveyance unit 9B is capable of movement in the vertical direction and rotation around the vertical axis.

第2搬運部9B進行第4搬運處理之一部分。具體而言，第2搬運部9B係將基板S從旋轉台9A搬運至曝光系統60之曝光裝置61。再者，第2搬運部9B係將基板S從曝光裝置61搬運至曝光系統60之周邊裝置62。另外，被搬運至周邊裝置62之基板S從作為外部裝置之周邊裝置62被搬運至第3處理線5。即是，第2搬運部9B係經由周邊裝置62將基板S搬運至第3處理線5。The second transport unit 9B performs part of the fourth transport process. Specifically, the second transport unit 9B is an exposure device 61 that transports the substrate S from the turntable 9A to the exposure system 60. In addition, the second transport unit 9B transports the substrate S from the exposure device 61 to the peripheral device 62 of the exposure system 60. In addition, the substrate S conveyed to the peripheral device 62 is conveyed to the third processing line 5 from the peripheral device 62 as an external device. That is, the second conveyance unit 9B conveys the substrate S to the third processing line 5 via the peripheral device 62.

另外，即使介面站9具備暫時性地載置藉由曝光裝置61被曝光的基板S的緩衝部(無圖示)亦可。緩衝部被配置在例如周邊裝置62之上方。依此，例如在第3處理線5中處理發生延遲之情況，基板處理裝置1可以將曝光結束的基板S暫時性地載置於緩衝部，繼續進行對基板S的處理、形成處理或第1熱處理等。In addition, even if the interface station 9 is provided with a buffer part (not shown) for temporarily placing the substrate S exposed by the exposure device 61. The buffer portion is arranged above the peripheral device 62, for example. According to this, for example, if the processing is delayed in the third processing line 5, the substrate processing apparatus 1 can temporarily place the exposed substrate S in the buffer portion, and continue processing, forming, or first processing of the substrate S. Heat treatment, etc.

曝光系統60具備曝光裝置61和周邊裝置(EE/TITLER)62。The exposure system 60 includes an exposure device 61 and a peripheral device (EE/TITLER) 62.

曝光裝置61使用具有與電路圖案對應之圖案的光罩而曝光光阻膜。The exposure device 61 uses a photomask having a pattern corresponding to the circuit pattern to expose the photoresist film.

周邊裝置62被配置成相對於第3處理線5在X軸正方向側鄰接。周邊裝置62具備周邊曝光裝置(EE)和標記器(TITLER)。周邊曝光裝置除去基板S之外周部的光阻膜。標記器將管理用碼寫入至基板S。The peripheral device 62 is arranged to be adjacent to the third processing line 5 on the positive X-axis side. The peripheral device 62 includes a peripheral exposure device (EE) and a marker (TITLER). The peripheral exposure device removes the photoresist film on the outer periphery of the substrate S. The marker writes the management code to the substrate S.

第3處理線5係對藉由曝光系統60被曝光之基板S進行顯像處理。第3處理線5係對藉由周邊裝置62被搬運之基板S進行顯像處理。換言之，第3處理線5係經由周邊裝置62對藉由第2搬運部9B被搬運的基板S進行顯像處理。The third processing line 5 performs development processing on the substrate S exposed by the exposure system 60. The third processing line 5 performs development processing on the substrate S transported by the peripheral device 62. In other words, the third processing line 5 performs development processing on the substrate S conveyed by the second conveying unit 9B via the peripheral device 62.

第3處理線5被配置在第1處理線3之下方。第3處理線5被配置在較周邊裝置62更靠X軸負方向側。另外，即使第3處理線5及周邊裝置62被配置在較第1處理線3上方亦可。The third processing line 5 is arranged below the first processing line 3. The third processing line 5 is arranged on the negative X-axis side of the peripheral device 62. In addition, the third processing line 5 and the peripheral device 62 may be arranged above the first processing line 3.

在第3處理線5中，基板S沿著X軸負方向被平流搬運。在第3處理線5中，基板S被短邊平流搬運。例如，基板S係藉由滾子搬運機構15被搬運。In the third processing line 5, the substrate S is transported advection along the negative X-axis direction. In the third processing line 5, the substrate S is advectively transported on the short side. For example, the substrate S is transported by the roller transport mechanism 15.

第3處理線5包含顯像單元(DEV)40、洗淨單元(RIN)41和乾燥單元(DRY)42。在第3處理線5中，單元40～42依照顯像單元40、洗淨單元41及乾燥單元42之順序沿著X軸負方向被配置。The third processing line 5 includes a developing unit (DEV) 40, a cleaning unit (RIN) 41, and a drying unit (DRY) 42. In the third processing line 5, the units 40 to 42 are arranged in the negative direction of the X axis in the order of the developing unit 40, the washing unit 41, and the drying unit 42.

顯像單元40係對從周邊裝置62被搬運的基板S，藉由顯像液顯像被曝光的光阻膜。洗淨單元41係藉由洗淨液(例如，脫離子水(DIW))沖洗顯像光阻膜後的基板S上之顯像液。乾燥單元42係使藉由洗淨液沖洗後的基板S上之洗淨液乾燥。藉由乾燥單元42被乾燥的基板S被搬運至相對於乾燥單元42在X軸負方向側被鄰接配置的搬出部43。另外，搬出部43即使被含在乾燥單元42亦可。The developing unit 40 develops the exposed photoresist film with a developing liquid on the substrate S conveyed from the peripheral device 62. The cleaning unit 41 rinses the developing solution on the substrate S after the developing photoresist film with a cleaning solution (for example, deionized water (DIW)). The drying unit 42 dries the cleaning solution on the substrate S washed by the cleaning solution. The board|substrate S dried by the drying unit 42 is conveyed to the carrying-out part 43 arrange|positioned adjacent to the negative direction side of the X-axis with respect to the drying unit 42. In addition, the carry-out part 43 may be included in the drying unit 42.

在基板處理裝置1中，第3處理線5被配置在第1處理線3之下方。因此，可以從共同的洗淨液槽(無圖示)供給被供給至洗淨單元41之洗淨液，和被供給至第1處理線3之擦淨洗淨單元21之洗淨液。再者，基板處理裝置1可以縮短連接洗淨單元41、擦淨洗淨單元21和洗淨液槽之配管(無圖示)。In the substrate processing apparatus 1, the third processing line 5 is arranged below the first processing line 3. Therefore, the washing liquid supplied to the washing unit 41 and the washing liquid supplied to the wiping washing unit 21 of the first processing line 3 can be supplied from a common washing liquid tank (not shown). Furthermore, the substrate processing apparatus 1 can shorten the piping (not shown) connecting the cleaning unit 41, the wiping cleaning unit 21, and the cleaning liquid tank.

藉由第3處理線5進行顯像處理後的基板S藉由第3搬運部11從搬出部43被搬運至第2熱處理單元8。The substrate S after the development processing by the third processing line 5 is conveyed from the unloading part 43 to the second heat treatment unit 8 by the third conveying part 11.

第2熱處理單元8係對進行顯像處理後的基板S進行第2熱處理。第2熱處理單元8具備第2加熱單元(PO/BAKE)50(顯像加熱部之一例)，和第3冷卻單元(COL)51。The second heat treatment unit 8 performs a second heat treatment on the substrate S after the development process. The second heat treatment unit 8 includes a second heating unit (PO/BAKE) 50 (an example of a development heating unit), and a third cooling unit (COL) 51.

第2加熱單元50加熱被進行顯像處理後的基板S。第2加熱單元50被配置成相對於第3搬運部11在X軸負方向側鄰接。具體而言，第2加熱單元50被配置在第3搬運部11和卡匣站2之間。第2加熱單元50例如在上下方向配置複數層。The second heating unit 50 heats the substrate S subjected to the development process. The second heating unit 50 is arranged to be adjacent to the third conveying unit 11 on the negative X-axis side. Specifically, the second heating unit 50 is arranged between the third conveying unit 11 and the cassette station 2. For example, the second heating unit 50 is arranged in a plurality of layers in the vertical direction.

在第2加熱單元50，藉由第3搬運部11被搬運藉由第3處理線5被進行顯像處理後的基板S。第2加熱單元50加熱沖洗液乾燥後的基板S，除去殘留在光阻膜之溶劑及沖洗液。第2加熱單元50與第1加熱單元30相同，係平板式的加熱單元。In the second heating unit 50, the substrate S subjected to the development processing by the third processing line 5 is conveyed by the third conveying section 11. The second heating unit 50 heats the substrate S dried by the rinse liquid to remove the solvent and rinse liquid remaining on the photoresist film. The second heating unit 50 is the same as the first heating unit 30 and is a flat plate heating unit.

第3冷卻單元51被配置在第3處理線5之搬出部43之上方，冷卻藉由第2加熱單元50被加熱後的基板S。在第3冷卻單元51，藉由第2加熱單元50除去溶劑及沖洗液後的基板S藉由第3搬運部11被搬運。藉由第3冷卻單元51被冷卻後的基板S藉由第3搬運部11被搬運至檢查單元65。另外，即使第3冷卻單元51設置複數亦可。即使第3冷卻單元51也被配置在檢查單元65之上方亦可。The third cooling unit 51 is arranged above the carry-out portion 43 of the third processing line 5 and cools the substrate S heated by the second heating unit 50. In the third cooling unit 51, the substrate S after the solvent and the rinse liquid have been removed by the second heating unit 50 is conveyed by the third conveying unit 11. The substrate S cooled by the third cooling unit 51 is conveyed to the inspection unit 65 by the third conveying unit 11. In addition, the third cooling unit 51 may be provided in plural. The third cooling unit 51 may also be arranged above the inspection unit 65.

第3搬運部11相對於第1搬運部10被串聯配置。第3搬運部11被配置在較第1搬運部10更靠X軸負方向側。另外，在第3搬運部11和第1搬運部10之間配置第1熱處理單元7。第3搬運部11具備能夠在水平方向伸縮之搬運臂(SA)11A。再者，第3搬運部11能夠進行沿著上下方向的移動及以垂直軸為中心的旋轉。The third conveying unit 11 is arranged in series with respect to the first conveying unit 10. The third conveying unit 11 is arranged on the negative X-axis side of the first conveying unit 10. In addition, the first heat treatment unit 7 is arranged between the third conveying unit 11 and the first conveying unit 10. The 3rd conveyance part 11 is equipped with the conveyance arm (SA) 11A which can expand and contract in a horizontal direction. In addition, the third conveyance unit 11 is capable of movement in the vertical direction and rotation around the vertical axis.

第3搬運部11係進行將基板S從第3處理線5搬運至第2加熱單元50的第5搬運處理(第3搬運工程之一例)。再者，第3搬運部11係進行將基板S從第3冷卻單元51搬運至檢查單元65的第6搬運處理。再者，第3搬運部11係在第2熱處理單元8進行基板S之搬運。具體而言，第3搬運部11將基板S從第2加熱單元50搬運至第3冷卻單元51。The third conveyance section 11 performs a fifth conveyance process (an example of the third conveyance process) that conveys the substrate S from the third processing line 5 to the second heating unit 50. In addition, the third conveyance unit 11 performs a sixth conveyance process for conveying the substrate S from the third cooling unit 51 to the inspection unit 65. In addition, the third conveyance unit 11 conveys the substrate S in the second heat treatment unit 8. Specifically, the third conveying unit 11 conveys the substrate S from the second heating unit 50 to the third cooling unit 51.

檢查單元65係進行光阻圖案(線)之極限尺寸(CD)之測量等的檢查。藉由檢查單元65進行檢查後的基板S被搬運至卡匣站2。The inspection unit 65 performs inspections such as measurement of the limit size (CD) of the photoresist pattern (line). The substrate S inspected by the inspection unit 65 is transported to the cassette station 2.

在基板處理裝置1中，第1搬運部10、第2搬運部9B及第3搬運部11係沿著X軸方向被排列配置。具體而言，在基板處理裝置1中，第1搬運部10、第2搬運部9B及第3搬運部11係沿著X軸正方向，依照第3搬運部11、第1搬運部10及第2搬運部9B之順序被排列配置。In the substrate processing apparatus 1, the first conveying unit 10, the second conveying unit 9B, and the third conveying unit 11 are arranged side by side along the X-axis direction. Specifically, in the substrate processing apparatus 1, the first conveying unit 10, the second conveying unit 9B, and the third conveying unit 11 are along the positive direction of the X axis, in accordance with the third conveying unit 11, the first conveying unit 10, and the The order of the 2 conveying parts 9B is arranged side by side.

控制裝置12為例如電腦，具備控制部12A和記憶部12B。記憶部12B係藉由例如RAM(Random Access Memory)、快閃記憶體(Flash Memory)等之半導體記憶體元件或硬碟、光碟等之記憶裝置而被實現。The control device 12 is, for example, a computer, and includes a control unit 12A and a storage unit 12B. The memory portion 12B is realized by semiconductor memory devices such as RAM (Random Access Memory), Flash Memory, etc., or memory devices such as hard disks and optical disks.

控制部12A包含CPU(Central Processing Unit)、ROM(Read Only Memory)、RAM、輸入輸出埠等之微電腦或各種電路。藉由微電腦之CPU讀出被記憶於ROM之程式並實行，實現卡匣站2或各處理線3～5等的控制。The control unit 12A includes a microcomputer such as a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM, an input/output port, and various circuits. The CPU of the microcomputer reads and executes the program stored in the ROM to realize the control of the cassette station 2 or each processing line 3~5.

另外，程式被記錄於藉由電腦可讀取之記憶媒體，即是係從其記憶媒體被安裝於控制裝置12之記憶部12B者亦可。作為藉由電腦可讀取之記憶媒體，例如有硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。In addition, the program is recorded in a storage medium that can be read by a computer, that is, it can be installed in the storage unit 12B of the control device 12 from the storage medium. As a storage medium that can be read by a computer, for example, there are hard disk (HD), floppy disk (FD), compact disk (CD), magneto-optical disk (MO), memory card, etc.

＜基板處理＞ 接著，針對第1實施型態所涉及之基板處理，參照圖3及圖4A～圖4J進行說明。圖3為表示第1實施型態所涉及之基板處理的流程圖。圖4A～圖4J係表示第1實施型態所涉及之基板處理裝置1中之基板S之搬運路徑的圖(其1～其10)。另外，圖4A～圖4J為了說明，並列記載第1處理線3和第3處理線5。＜Substrate Treatment＞ Next, the substrate processing according to the first embodiment will be described with reference to FIGS. 3 and 4A to 4J. Fig. 3 is a flowchart showing substrate processing according to the first embodiment. 4A to 4J are diagrams showing the conveyance path of the substrate S in the substrate processing apparatus 1 according to the first embodiment (part 1 to part 10). In addition, FIGS. 4A to 4J describe the first processing line 3 and the third processing line 5 side by side for explanation.

基板處理裝置1進行前處理(S10)。基板處理裝置1如圖4A所示般，將基板S從卡匣站2搬運至第1處理線3，邊平流搬運基板S，邊對基板S進行前處理。The substrate processing apparatus 1 performs preprocessing (S10). As shown in FIG. 4A, the substrate processing apparatus 1 transports the substrate S from the cassette station 2 to the first processing line 3, and performs preprocessing on the substrate S while transporting the substrate S advectionally.

基板處理裝置1進行第1搬運處理(S11)。基板處理裝置1如圖4B所示般，藉由第1搬運部10將基板S從第1處理線3搬運至第2處理線4。The substrate processing apparatus 1 performs the first transport process (S11). As shown in FIG. 4B, the substrate processing apparatus 1 conveys the substrate S from the first processing line 3 to the second processing line 4 by the first conveying unit 10.

基板處理裝置1進行光阻膜之形成處理(S12)。基板處理裝置1係如圖4B所示般，邊平流搬運基板S，邊藉由光阻塗佈單元27在基板S塗佈光阻液，在基板S形成光阻膜。The substrate processing apparatus 1 performs photoresist film formation processing (S12). As shown in FIG. 4B, the substrate processing apparatus 1 uses the photoresist coating unit 27 to apply a photoresist liquid on the substrate S while conveying the substrate S horizontally, and forms a photoresist film on the substrate S.

基板處理裝置1進行第2搬運處理(S13)。基板處理裝置1如圖4C所示般，藉由第1搬運部10將基板S從第2處理線4搬運至減壓乾燥單元6。The substrate processing apparatus 1 performs a second conveyance process (S13). As shown in FIG. 4C, the substrate processing apparatus 1 conveys the substrate S from the second processing line 4 to the reduced-pressure drying unit 6 by the first conveying unit 10.

基板處理裝置1進行減壓乾燥處理(S14)。基板處理裝置1藉由減壓乾燥單元6使基板S減壓乾燥。The substrate processing apparatus 1 performs a reduced-pressure drying process (S14). In the substrate processing apparatus 1, the substrate S is dried under reduced pressure by the reduced-pressure drying unit 6.

基板處理裝置1進行第3搬運處理(S15)。基板處理裝置1如圖4D所示般，藉由第1搬運部10將基板S從減壓乾燥單元6搬運至第1熱處理單元7之第2冷卻單元31。The substrate processing apparatus 1 performs a third conveyance process (S15). As shown in FIG. 4D, the substrate processing apparatus 1 transports the substrate S from the reduced-pressure drying unit 6 to the second cooling unit 31 of the first heat treatment unit 7 by the first transport unit 10.

基板處理裝置1進行第1熱處理(S16)。基板處理裝置1係如圖4E所示般，將基板S從第2冷卻單元31搬運至第1加熱單元30，藉由第1加熱單元30加熱基板S。The substrate processing apparatus 1 performs the first heat treatment (S16). The substrate processing apparatus 1 transports the substrate S from the second cooling unit 31 to the first heating unit 30 as shown in FIG. 4E, and the substrate S is heated by the first heating unit 30.

並且，基板處理裝置1係將藉由第1加熱單元30加熱後的基板S搬運至第2冷卻單元31。而且，基板處理裝置1係藉由第2冷卻單元31冷卻基板S。In addition, the substrate processing apparatus 1 conveys the substrate S heated by the first heating unit 30 to the second cooling unit 31. Furthermore, the substrate processing apparatus 1 cools the substrate S by the second cooling unit 31.

基板處理裝置1進行第4搬運處理(S17)。基板處理裝置1係如圖4F所示般，藉由第1搬運部10將基板S從第1熱處理單元7之第2冷卻單元31搬運至介面站9之旋轉台9A。而且，基板處理裝置1係藉由第2搬運部9B將藉由旋轉台9A在水平方向旋轉90度或-90度後的基板S搬運至曝光系統60之曝光裝置61。再者，基板處理裝置1係藉由第2搬運部9B將基板S從曝光裝置61搬運至周邊裝置62。The substrate processing apparatus 1 performs the fourth conveyance process (S17). As shown in FIG. 4F, the substrate processing apparatus 1 transports the substrate S from the second cooling unit 31 of the first heat treatment unit 7 to the turntable 9A of the interface station 9 by the first transport unit 10. Furthermore, the substrate processing apparatus 1 conveys the substrate S rotated by 90 degrees or −90 degrees in the horizontal direction by the turntable 9A to the exposure device 61 of the exposure system 60 by the second conveyance portion 9B. In addition, the substrate processing apparatus 1 conveys the substrate S from the exposure apparatus 61 to the peripheral apparatus 62 by the 2nd conveyance part 9B.

基板處理裝置1進行顯像處理(S18)。具體而言，基板處理裝置1係如圖4G所示般，將基板S從周邊裝置62搬運至第3處理線5。而且，基板處理裝置1係邊平流搬運基板S，邊藉由顯像單元40顯像基板S。再者，基板處理裝置1係藉由洗淨單元41沖洗顯像後的基板S，並藉由乾燥單元42使其乾燥。The substrate processing apparatus 1 performs development processing (S18). Specifically, the substrate processing apparatus 1 conveys the substrate S from the peripheral device 62 to the third processing line 5 as shown in FIG. 4G. In addition, the substrate processing apparatus 1 develops the substrate S by the developing unit 40 while conveying the substrate S advection. Furthermore, in the substrate processing apparatus 1, the developed substrate S is rinsed by the cleaning unit 41 and dried by the drying unit 42.

基板處理裝置1進行第5搬運處理(S19)。基板處理裝置1係如圖4H所示般，藉由第3搬運部11將基板S從第3處理線5之搬出部43搬運至第2熱處理單元8之第2加熱單元50。The substrate processing apparatus 1 performs the fifth conveyance process (S19). As shown in FIG. 4H, the substrate processing apparatus 1 conveys the substrate S from the unloading section 43 of the third processing line 5 to the second heating unit 50 of the second heat treatment unit 8 by the third conveying unit 11.

基板處理裝置1進行第2熱處理(S20)。具體而言，基板處理裝置1係將基板S藉由第2加熱單元50進行加熱。而且，基板處理裝置1係如圖4I所示般，將加熱後的基板S藉由第3搬運部11搬運至被配置在第3處理線5之搬出部43之上方的第3冷卻單元51，冷卻基板S。The substrate processing apparatus 1 performs the second heat treatment (S20). Specifically, the substrate processing apparatus 1 heats the substrate S by the second heating unit 50. Furthermore, as shown in FIG. 4I, the substrate processing apparatus 1 conveys the heated substrate S by the third conveying section 11 to the third cooling unit 51 arranged above the unloading section 43 of the third processing line 5. Cool the substrate S.

基板處理裝置1進行第6搬運處理(S21)。基板處理裝置1如圖4J所示般，藉由第3搬運部11將基板S從第3冷卻單元51搬運至檢查單元65。檢查結束後的基板S被搬運至卡匣站2。The substrate processing apparatus 1 performs the sixth conveyance process (S21). As shown in FIG. 4J, the substrate processing apparatus 1 transports the substrate S from the third cooling unit 51 to the inspection unit 65 by the third transport section 11. After the inspection, the substrate S is transported to the cassette station 2.

＜效果＞ 基板處理裝置1具備對基板S進行前處理的第1處理線3，和相對於第1處理線3被並聯配置，且在被進行前處理後的基板S塗佈光阻液的第2處理線4。再者，基板處理裝置1具備被配置在第1處理線3之上方，對塗佈光阻液後的基板S進行顯像處理的第3處理線5。再者，基板處理裝置1具備被設置在第1處理線3和第2處理線4之間，將基板S從第1處理線3搬運至第2處理線4的第1搬運部10。再者，基板處理裝置1具備相對於第1搬運部10被串聯配置，將基板S經由周邊裝置62搬運至第3處理線5的第2搬運部9B。再者，基板處理裝置1具備相對於第1搬運部10被串聯配置，從第3處理線5搬運基板S的第3搬運部11。<Effects> The substrate processing apparatus 1 includes a first processing line 3 for preprocessing the substrate S, and a second processing line that is arranged in parallel with the first processing line 3 and coated with photoresist liquid on the preprocessed substrate S 4. Furthermore, the substrate processing apparatus 1 includes a third processing line 5 that is arranged above the first processing line 3 and performs development processing on the substrate S after the photoresist liquid is applied. Furthermore, the substrate processing apparatus 1 includes a first conveying unit 10 which is provided between the first processing line 3 and the second processing line 4 and conveys the substrate S from the first processing line 3 to the second processing line 4. Furthermore, the substrate processing apparatus 1 includes a second conveying section 9B that is arranged in series with the first conveying section 10 and conveys the substrate S to the third processing line 5 via the peripheral device 62. Furthermore, the substrate processing apparatus 1 includes a third conveying section 11 arranged in series with respect to the first conveying section 10 and conveying the substrate S from the third processing line 5.

依此，基板處理裝置1可以在左右方向排列配置進行前處理的第1處理線3，和形成光阻膜的第2處理線4。因此，基板處理裝置1可以縮短X軸方向(前後方向)之長度，即是基板處理裝置1之全長。According to this, the substrate processing apparatus 1 can arrange the first processing line 3 for pre-processing and the second processing line 4 for forming a photoresist film in the left-right direction. Therefore, the substrate processing apparatus 1 can shorten the length in the X-axis direction (front-rear direction), that is, the total length of the substrate processing apparatus 1.

再者，基板處理裝置1藉由在上下方向疊層配置第1處理線3和第3處理線5，可以抑制Y軸方向(左右方向)之長度變長之情形。再者，基板處理裝置1可以從相同的洗淨液槽對例如第1處理線3之擦淨洗淨單元21，和第3處理線5之洗淨單元41供給洗淨液。再者，基板處理裝置1可以縮短連接各洗淨單元21、41和洗淨液槽之配管。即是，基板處理裝置1可以一面使用共同的洗淨液槽，一面縮短連接洗淨液槽和各洗淨單元21、41之配管。因此，基板處理裝置1可以使裝置全體成為小型化，同時刪減成本。Furthermore, the substrate processing apparatus 1 can prevent the length of the Y-axis direction (left-right direction) from becoming longer by arranging the first processing line 3 and the third processing line 5 in a stack in the vertical direction. Furthermore, the substrate processing apparatus 1 can supply the cleaning liquid from the same cleaning liquid tank to, for example, the cleaning cleaning unit 21 of the first processing line 3 and the cleaning unit 41 of the third processing line 5. Furthermore, the substrate processing apparatus 1 can shorten the piping connecting the cleaning units 21, 41 and the cleaning liquid tank. That is, the substrate processing apparatus 1 can use a common washing liquid tank while shortening the piping connecting the washing liquid tank and the respective washing units 21 and 41. Therefore, the substrate processing apparatus 1 can reduce the overall size of the apparatus while reducing the cost.

再者，基板處理裝置1係將第1搬運部10配置在第1處理線3和第2處理線4之間，並且相對於第1搬運部10串聯配置第2搬運部9B及第3搬運部11。具體而言，基板處理裝置1係沿著X軸方向配置第1搬運部10、第2搬運部9B及第3搬運部11。Furthermore, in the substrate processing apparatus 1, the first conveying unit 10 is arranged between the first processing line 3 and the second processing line 4, and the second conveying unit 9B and the third conveying unit are arranged in series with the first conveying unit 10 11. Specifically, in the substrate processing apparatus 1, the first conveying unit 10, the second conveying unit 9B, and the third conveying unit 11 are arranged along the X-axis direction.

依此，基板處理裝置1可以縮短第1處理線3或在第3處理線5中的X軸方向之長度，可以縮短基板處理裝置1之全長。According to this, the substrate processing apparatus 1 can shorten the length of the first processing line 3 or the third processing line 5 in the X-axis direction, and can shorten the total length of the substrate processing apparatus 1.

基板處理裝置1具備被配置在第1搬運部10和第3搬運部11之間，基板S藉由第1搬運部10被搬運的第1熱處理單元7。The substrate processing apparatus 1 includes a first heat treatment unit 7 which is arranged between the first conveying unit 10 and the third conveying unit 11, and the substrate S is conveyed by the first conveying unit 10.

依此，基板處理裝置1可以縮短第1處理線3或在第2處理線4中的X軸方向之長度，可以縮短基板處理裝置1之全長。再者，基板處理裝置1可以藉由相同的第1搬運部10進行從第1處理線3朝第2處理線4的第1搬運處理，及從減壓乾燥單元6朝第1熱處理單元7的第3搬運處理。因此，基板處理裝置1可以減少搬運部之數量，刪減成本。Accordingly, the substrate processing apparatus 1 can shorten the length of the first processing line 3 or the second processing line 4 in the X-axis direction, and can shorten the total length of the substrate processing apparatus 1. Furthermore, the substrate processing apparatus 1 can perform the first transport process from the first process line 3 to the second process line 4, and from the reduced pressure drying unit 6 to the first heat treatment unit 7 by the same first transport unit 10. The third transportation process. Therefore, the substrate processing apparatus 1 can reduce the number of conveying parts and reduce the cost.

再者，基板處理裝置1具備加熱基板S之第1加熱單元30，和冷卻藉由第1加熱單元30被加熱後的基板S的第2冷卻單元31，作為第1熱處理單元7。而且，基板處理裝置1係藉由第1搬運部10將基板S搬入至第2冷卻單元31，並且藉由第1搬運部10將基板S從第2冷卻單元31搬出。即是，第1搬運部10不被***至第1加熱單元30內。Furthermore, the substrate processing apparatus 1 includes a first heating unit 30 that heats the substrate S, and a second cooling unit 31 that cools the substrate S heated by the first heating unit 30 as the first heat treatment unit 7. Furthermore, the substrate processing apparatus 1 carries the substrate S into the second cooling unit 31 by the first conveying unit 10, and conveys the substrate S from the second cooling unit 31 by the first conveying unit 10. That is, the first conveying unit 10 is not inserted into the first heating unit 30.

再者，基板處理裝置1可以藉由設置第1加熱單元30和第2冷卻單元31以作為一個第1熱處理單元7，在第1加熱單元30和第2冷卻單元31之間不使用第1搬運部10而予以搬運基板S。Furthermore, the substrate processing apparatus 1 can serve as a first heat treatment unit 7 by providing the first heating unit 30 and the second cooling unit 31, without using the first transport between the first heating unit 30 and the second cooling unit 31 Section 10 to transport the substrate S.

依此，基板處理裝置1可以防止第1搬運部10被加熱之情形。因此，基板處理裝置1可以在藉由第1搬運部10搬運基板S之情況，抑制熱從第1搬運部10傳至基板S之情形。因此，可以抑制被搬運至第2處理線4之基板S之溫度變高之情形，抑制在基板S發生光阻液之塗佈斑之情形。再者，基板處理裝置1可以不施予抑制熱從第1搬運部10傳至基板S的熱轉印對策，而藉由第1搬運部10搬運基板S。因此，基板處理裝置1可以刪減成本。再者，基板處理裝置1可以減少第1搬運部10所致的搬運工時。According to this, the substrate processing apparatus 1 can prevent the first conveying portion 10 from being heated. Therefore, the substrate processing apparatus 1 can suppress the transfer of heat from the first conveying section 10 to the substrate S when the substrate S is conveyed by the first conveying section 10. Therefore, it is possible to suppress the increase in the temperature of the substrate S conveyed to the second processing line 4, and to suppress the occurrence of coating spots of the photoresist liquid on the substrate S. In addition, the substrate processing apparatus 1 may transport the substrate S by the first transport section 10 without applying a thermal transfer countermeasure for suppressing heat transfer from the first transport section 10 to the substrate S. Therefore, the substrate processing apparatus 1 can cut costs. Furthermore, the substrate processing apparatus 1 can reduce the transportation man-hours caused by the first transportation unit 10.

再者，基板處理裝置1係將第2熱處理單元8之第2加熱單元50相對於第1搬運部10予以串聯配置。而且，基板處理裝置1係藉由第3搬運部11將基板S從第3處理線5搬運至第2加熱單元50。Furthermore, in the substrate processing apparatus 1, the second heating unit 50 of the second heat treatment unit 8 is arranged in series with respect to the first conveying unit 10. Furthermore, the substrate processing apparatus 1 conveys the substrate S from the third processing line 5 to the second heating unit 50 by the third conveying unit 11.

依此，基板處理裝置1可以縮短第1處理線3或在第3處理線5中的X軸方向之長度，可以縮短基板處理裝置1之全長。According to this, the substrate processing apparatus 1 can shorten the length of the first processing line 3 or the third processing line 5 in the X-axis direction, and can shorten the total length of the substrate processing apparatus 1.

(第2實施型態) ＜全體構成＞ 接著，針對第2實施型態所涉及之基板處理裝置1，參照圖5予以說明。圖5為表示第2實施型態所涉及之基板處理裝置1之概略構成的俯視圖。在此，以與第1實施型態不同之處為中心予以說明。另外，在第2實施型態所涉及之基板處理裝置1中，針對與第1實施型態相同的構成，標示與第1實施型態相同的符號。再者，省略針對與第1實施型態相同之構成之一部分的說明。(Second Implementation Type) <Overall composition> Next, the substrate processing apparatus 1 according to the second embodiment will be described with reference to FIG. 5. FIG. 5 is a plan view showing a schematic configuration of the substrate processing apparatus 1 according to the second embodiment. Here, the description will focus on the differences from the first embodiment. In addition, in the substrate processing apparatus 1 according to the second embodiment, the same configuration as the first embodiment is denoted by the same reference numerals as in the first embodiment. In addition, a description of a part of the same configuration as the first embodiment is omitted.

減壓乾燥單元6相對於第1搬運部10被串聯配置，相對於第1搬運部10在X軸負方向側被鄰接配置。減壓乾燥單元6被配置在第1搬運部10和第3搬運部11之間。The reduced-pressure drying unit 6 is arranged in series with respect to the first conveying section 10, and is arranged adjacent to the first conveying section 10 on the negative X-axis side. The reduced-pressure drying unit 6 is arranged between the first conveying unit 10 and the third conveying unit 11.

第1熱處理單元7相對於第1搬運部10被串聯配置，相對於第1搬運部10在X軸正方向側被鄰接配置。第1熱處理單元7被配置在第1搬運部10和介面站9之間。第1熱處理單元7之第2冷卻單元31在前後方向之兩端具有開口部(無圖示)，可以從前方藉由第1搬運部10搬入基板S。再者，第2冷卻單元31可以從後方藉由第2搬運部9B搬出基板S。The first heat treatment unit 7 is arranged in series with respect to the first conveying unit 10 and is arranged adjacent to the first conveying unit 10 on the positive X-axis side. The first heat treatment unit 7 is arranged between the first conveying unit 10 and the interface station 9. The second cooling unit 31 of the first heat treatment unit 7 has openings (not shown) at both ends in the front-rear direction, and the substrate S can be carried in by the first conveying unit 10 from the front. Furthermore, the second cooling unit 31 can carry out the substrate S by the second conveying part 9B from the rear.

在介面站9中，旋轉站9A相對於第2搬運部9B被配置在左方。In the interface station 9, the rotating station 9A is arranged on the left with respect to the second conveying unit 9B.

第1搬運部10係進行將基板S從第1處理線3搬運至第2處理線4的第1搬運處理。再者，第1搬運部10係進行將基板S從第2處理線4搬運至減壓乾燥單元6的第2搬運處理。再者，第1搬運部10係進行將基板S從減壓乾燥單元6搬運至第1熱處理單元7的第3搬運處理。The first transport unit 10 performs a first transport process for transporting the substrate S from the first processing line 3 to the second processing line 4. In addition, the 1st conveyance part 10 performs the 2nd conveyance process which conveys the board|substrate S from the 2nd process line 4 to the reduced pressure drying unit 6. In addition, the first conveyance unit 10 performs a third conveyance process for conveying the substrate S from the reduced-pressure drying unit 6 to the first heat treatment unit 7.

第2搬運部9B係將基板S從第1熱處理單元7搬運至介面站9，將基板S從介面站9朝曝光系統60搬運的第4搬運處理。具體而言，第2搬運部9B係將基板S從第1熱處理單元7之第2冷卻單元31，搬運至介面站9之旋轉站9A。再者，第2搬運部9B係將基板S從旋轉台9A搬運至曝光系統60之曝光裝置61。再者，第2搬運部9B係將基板S從曝光裝置61搬運至曝光系統60之周邊裝置62。即是，第2搬運部9B係從第1熱處理單元7經由周邊裝置62將基板S搬運至第3處理線5。The second transport section 9B is a fourth transport process in which the substrate S is transported from the first heat treatment unit 7 to the interface station 9 and the substrate S is transported from the interface station 9 to the exposure system 60. Specifically, the second transport unit 9B transports the substrate S from the second cooling unit 31 of the first heat treatment unit 7 to the rotating station 9A of the interface station 9. In addition, the 2nd conveyance part 9B is the exposure apparatus 61 which conveys the board|substrate S from the turntable 9A to the exposure system 60. In addition, the second transport unit 9B transports the substrate S from the exposure device 61 to the peripheral device 62 of the exposure system 60. That is, the second conveying unit 9B conveys the substrate S to the third processing line 5 from the first heat treatment unit 7 via the peripheral device 62.

＜基板處理＞ 接著，針對第2實施型態所涉及之基板處理裝置1中的基板處理，參照圖3及圖6A～圖6G進行說明。第2實施型態所涉及之基板處理裝置1中之基板處理之流程圖與第1實施型態相同。圖6A～圖6G係表示第2實施型態所涉及之基板處理裝置1中之基板S之搬運路徑的圖(其1～其7)。另外，圖6A～圖6J為了說明，並列記載第1處理線3和第3處理線5。＜Substrate Treatment＞ Next, the substrate processing in the substrate processing apparatus 1 according to the second embodiment will be described with reference to FIGS. 3 and 6A to 6G. The flowchart of the substrate processing in the substrate processing apparatus 1 according to the second embodiment is the same as that of the first embodiment. 6A to 6G are diagrams showing the conveying path of the substrate S in the substrate processing apparatus 1 according to the second embodiment (part 1 to part 7). In addition, FIGS. 6A to 6J describe the first processing line 3 and the third processing line 5 side by side for explanation.

基板處理裝置1進行前處理(S10)。基板處理裝置1如圖6A所示般，將基板S從卡匣站2搬運至第1處理線3，邊平流搬運基板S，邊對基板S進行前處理。The substrate processing apparatus 1 performs preprocessing (S10). As shown in FIG. 6A, the substrate processing apparatus 1 transports the substrate S from the cassette station 2 to the first processing line 3, and carries out the pre-processing of the substrate S while transporting the substrate S advectionally.

基板處理裝置1進行第1搬運處理(S11)。基板處理裝置1如圖6B所示般，藉由第1搬運部10將基板S從第1處理線3搬運至第2處理線4。The substrate processing apparatus 1 performs the first transport process (S11). As shown in FIG. 6B, the substrate processing apparatus 1 conveys the substrate S from the first processing line 3 to the second processing line 4 by the first conveying unit 10.

基板處理裝置1進行光阻膜之形成處理(S12)。基板處理裝置1係如圖6B所示般，邊平流搬運基板S，邊藉由光阻塗佈單元27在基板S塗佈光阻液，在基板S形成光阻膜。The substrate processing apparatus 1 performs photoresist film formation processing (S12). As shown in FIG. 6B, the substrate processing apparatus 1 uses the photoresist coating unit 27 to apply a photoresist liquid on the substrate S while conveying the substrate S horizontally, and forms a photoresist film on the substrate S.

基板處理裝置1進行第2搬運處理(S13)。基板處理裝置1如圖6C所示般，藉由第1搬運部10將基板S從第2處理線4搬運至減壓乾燥單元6。The substrate processing apparatus 1 performs a second conveyance process (S13). As shown in FIG. 6C, the substrate processing apparatus 1 conveys the substrate S from the second processing line 4 to the reduced-pressure drying unit 6 by the first conveying unit 10.

基板處理裝置1進行減壓乾燥處理(S14)。基板處理裝置1藉由減壓乾燥單元6使基板S減壓乾燥。The substrate processing apparatus 1 performs a reduced-pressure drying process (S14). In the substrate processing apparatus 1, the substrate S is dried under reduced pressure by the reduced-pressure drying unit 6.

基板處理裝置1進行第3搬運處理(S15)。基板處理裝置1如圖6D所示般，藉由第1搬運部10將基板S從減壓乾燥單元6搬運至第1熱處理單元7之第2冷卻單元31。The substrate processing apparatus 1 performs a third conveyance process (S15). As shown in FIG. 6D, the substrate processing apparatus 1 transports the substrate S from the reduced-pressure drying unit 6 to the second cooling unit 31 of the first heat treatment unit 7 by the first transport unit 10.

基板處理裝置1進行第1熱處理(S16)。基板處理裝置1係如圖6E所示般，將基板S從第2冷卻單元31搬運至第1加熱單元30，藉由第1加熱單元30加熱基板S。The substrate processing apparatus 1 performs the first heat treatment (S16). The substrate processing apparatus 1 transports the substrate S from the second cooling unit 31 to the first heating unit 30 as shown in FIG. 6E, and the substrate S is heated by the first heating unit 30.

並且，基板處理裝置1係將藉由第1加熱單元30加熱後的基板S搬運至第2冷卻單元31。而且，基板處理裝置1係藉由第2冷卻單元31冷卻基板S。In addition, the substrate processing apparatus 1 conveys the substrate S heated by the first heating unit 30 to the second cooling unit 31. Furthermore, the substrate processing apparatus 1 cools the substrate S by the second cooling unit 31.

基板處理裝置1進行第4搬運處理(S17)。基板處理裝置1係如圖6F所示般，藉由第1搬運部10將基板S從第1熱處理單元7之第2冷卻單元31搬運至介面站9之旋轉台9A。而且，基板處理裝置1係藉由第2搬運部9B將藉由旋轉台9A在水平方向旋轉90度或-90度後的基板S搬運至曝光系統60之曝光裝置61。再者，基板處理裝置1係藉由第2搬運部9B將基板S從曝光裝置61搬運至周邊裝置62。The substrate processing apparatus 1 performs the fourth conveyance process (S17). As shown in FIG. 6F, the substrate processing apparatus 1 transports the substrate S from the second cooling unit 31 of the first heat treatment unit 7 to the turntable 9A of the interface station 9 by the first transport unit 10. Furthermore, the substrate processing apparatus 1 conveys the substrate S rotated by 90 degrees or −90 degrees in the horizontal direction by the turntable 9A to the exposure device 61 of the exposure system 60 by the second conveyance portion 9B. In addition, the substrate processing apparatus 1 conveys the substrate S from the exposure apparatus 61 to the peripheral apparatus 62 by the 2nd conveyance part 9B.

針對顯像處理(S18)～第6搬運處理(S21)為止的處理，及基板S之搬運路徑，與第1實施型態相同，省略詳細說明。The processes from the development process (S18) to the sixth conveyance process (S21) and the conveyance path of the substrate S are the same as those in the first embodiment, and detailed descriptions are omitted.

＜效果＞ 基板處理裝置1具備被配置在第1搬運部10和第3搬運部11之間，基板S藉由第1搬運部10被搬運，對基板S進行減壓乾燥處理的減壓乾燥單元6。再者，基板處理裝置1具備被配置在第1搬運部10和第2搬運部9B之間，基板S從減壓乾燥單元6藉由第1搬運部10被搬運的第1熱處理單元7。第2搬運部9B係從第1熱處理單元7搬運基板S。<Effects> The substrate processing apparatus 1 includes a reduced-pressure drying unit 6 which is arranged between the first conveying unit 10 and the third conveying unit 11, and the substrate S is conveyed by the first conveying unit 10 to perform a reduced-pressure drying process on the substrate S. Furthermore, the substrate processing apparatus 1 includes a first heat treatment unit 7 which is arranged between the first conveyance unit 10 and the second conveyance unit 9B, and the substrate S is conveyed from the reduced-pressure drying unit 6 by the first conveyance unit 10. The second conveying unit 9B conveys the substrate S from the first heat treatment unit 7.

依此，基板處理裝置1可以減少第1搬運部10所致的搬運工時。因此，基板處理裝置1可以縮短例如第1搬運部10所致的基板搬運之等待時間，且縮短在裝置全體中之基板S的處理時間。According to this, the substrate processing apparatus 1 can reduce the transportation man-hours caused by the first transportation unit 10. Therefore, the substrate processing apparatus 1 can shorten, for example, the waiting time of the substrate transport by the first transport unit 10 and shorten the processing time of the substrate S in the entire apparatus.

再者，基板處理裝置1比起例如減壓乾燥單元6和第1熱處理單元7相對於第2處理線4被串聯配置之情況，可以縮短在X軸方向中之第1搬運部10之長度。因此，基板處理裝置1可以縮短在X軸方向中之第1搬運部10之移動距離，即是移動時間，在裝置全體中之基板S的處理時間。Furthermore, the substrate processing apparatus 1 can shorten the length of the first conveying part 10 in the X-axis direction compared to the case where the reduced-pressure drying unit 6 and the first heat treatment unit 7 are arranged in series with respect to the second processing line 4, for example. Therefore, the substrate processing apparatus 1 can shorten the moving distance of the first conveying portion 10 in the X-axis direction, that is, the moving time, the processing time of the substrate S in the entire apparatus.

再者，基板處理裝置1可以在減壓乾燥單元6之左方，在圖5中表示影線的區域，配置泵浦等之輔助機，可以使裝置全體小型化。Furthermore, the substrate processing apparatus 1 can be provided with auxiliary machines such as pumps on the left side of the reduced-pressure drying unit 6 in the hatched area in FIG. 5, so that the entire apparatus can be miniaturized.

(變形例) 接著，針對本實施型態之變形例予以說明。(Modification) Next, a modification of this embodiment will be described.

即使變形例所涉及的基板處理裝置1在第2處理線4對基板S塗佈複數次處理液亦可。例如，即使變形例所涉及的基板處理裝置1在形成光阻膜之前，形成反射防止膜亦可。在此情況，變形例所涉及的基板處理裝置1係光阻塗佈單元27具備複數噴嘴。Even if the substrate processing apparatus 1 according to the modification example applies the processing liquid to the substrate S in the second processing line 4 a plurality of times. For example, the substrate processing apparatus 1 according to the modified example may form an anti-reflection film before forming the photoresist film. In this case, the photoresist coating unit 27 of the substrate processing apparatus 1 according to the modification includes a plurality of nozzles.

變形例所涉及之基板處理裝置1係以光阻塗佈單元27在藉由第1搬運部10從第1處理線3被搬運的基板S形成反射防止膜。而且，變形例所涉及的基板處理裝置1係藉由減壓乾燥單元6、第1熱處理單元7進行各處理，藉由第1搬運部10將基板S再次搬入至光阻塗佈單元27。而且，變形例所涉及的基板處理裝置1係在形成反射防止膜後的基板S，藉由光阻塗佈單元27形成光阻膜。The substrate processing apparatus 1 according to the modified example uses the photoresist coating unit 27 to form an anti-reflection film on the substrate S conveyed from the first processing line 3 by the first conveying section 10. In the substrate processing apparatus 1 according to the modification, each process is performed by the reduced-pressure drying unit 6 and the first heat treatment unit 7, and the substrate S is transported into the photoresist coating unit 27 again by the first conveying unit 10. In addition, the substrate processing apparatus 1 according to the modification is based on the substrate S after the anti-reflection film is formed, and the photoresist film is formed by the photoresist coating unit 27.

如此一來，即使變形例所涉及的基板處理裝置1可以藉由第2處理線4進行複數次處理液的塗佈。即是，在變形例所涉及之基板處理裝置1進行複數次處理液的塗佈之情況，可以藉由第1搬運部10將基板S從第1熱處理單元7搬運至第2處理線4。因此，變形例所涉及之基板處理裝置1可以縮短裝置在X軸方向的長度。另外，即使變形例所涉及的基板處理裝置1於上下方向疊層塗佈複數次處理液的單元亦可。In this way, even the substrate processing apparatus 1 according to the modification example can apply the processing liquid multiple times by the second processing line 4. That is, when the substrate processing apparatus 1 according to the modified example performs the coating of the processing liquid multiple times, the substrate S can be conveyed from the first heat treatment unit 7 to the second processing line 4 by the first conveying section 10. Therefore, the substrate processing apparatus 1 according to the modified example can shorten the length of the apparatus in the X-axis direction. In addition, the substrate processing apparatus 1 according to the modified example may be a unit in which the processing liquid is applied multiple times in the vertical direction.

再者，即使變形例所涉及的基板處理裝置1係不進行顯像處理的裝置亦可。變形例所涉及之基板處理裝置1係在例如第1實施型態所涉及之基板處理裝置1之構成中，藉由第1處理線3洗淨基板S，藉由第2處理線4塗佈處理液之後，藉由第1搬運部10將基板S載置於第1熱處理單元7之上部。而且，即使變形例所涉及之基板處理裝置1將藉由第3搬運部11被載置後的基板S搬運至檢查單元65或卡匣站2亦可。例如，變形例所涉及的基板處理裝置1即使係對基板S進行複數次處理液之塗佈，在基板S形成偏光膜的裝置亦可。另外，作為基板S朝第1熱處理單元7的載置方法，例如即使在第2冷卻單元31之前後方向之兩端設置開口部，能夠藉由第3搬運部11從第2冷卻單元31搬運基板S亦可。In addition, the substrate processing apparatus 1 according to the modified example may be an apparatus that does not perform development processing. The substrate processing apparatus 1 according to the modification is, for example, in the configuration of the substrate processing apparatus 1 according to the first embodiment, the substrate S is cleaned by the first processing line 3, and the second processing line 4 is coated. After the liquid, the substrate S is placed on the upper part of the first heat treatment unit 7 by the first conveying unit 10. Furthermore, even if the substrate processing apparatus 1 according to the modification example transports the substrate S placed by the third transport unit 11 to the inspection unit 65 or the cassette station 2. For example, the substrate processing apparatus 1 according to the modified example may be an apparatus that coats the substrate S with a processing liquid several times and forms a polarizing film on the substrate S. In addition, as a method of placing the substrate S on the first heat treatment unit 7, for example, even if openings are provided at both ends in the front and rear direction of the second cooling unit 31, the substrate can be transported from the second cooling unit 31 by the third conveying unit 11 S is also possible.

如此一來，變形例所涉及的基板處理裝置1可以縮短對基板S塗佈複數次處理液的裝置中的X軸方向的長度。In this way, the substrate processing apparatus 1 according to the modified example can shorten the length in the X-axis direction in the apparatus for applying the processing liquid to the substrate S multiple times.

再者，變形例所涉及之基板處理裝置1即使例如在第1搬運部10具有複數搬運臂，藉由複數搬運臂搬運基板S亦可。In addition, even if the substrate processing apparatus 1 according to the modified example has a plurality of transport arms in the first transport section 10, the substrate S may be transported by the plurality of transport arms.

再者，變形例所涉及之基板處理裝置1即使在第1熱處理單元7中，於上下方向設置複數段第1加熱單元30及第2冷卻單元31亦可。變形例所涉及之基板處理裝置1例如圖7所示般，在上下方向疊層基板S藉由第1搬運部10被搬入的搬入部(PAS)70，和第1加熱單元30，和第2冷卻單元31。圖7為表示從X軸正方向觀看變形例所涉及的基板處理裝置1中之第1熱處理單元7之概略構成的方塊圖。In addition, in the substrate processing apparatus 1 according to the modified example, even in the first heat treatment unit 7, a plurality of stages of the first heating unit 30 and the second cooling unit 31 may be installed in the vertical direction. In the substrate processing apparatus 1 according to the modification example, as shown in FIG. 7, the loading section (PAS) 70 into which the substrate S is stacked in the vertical direction by the first conveying section 10, the first heating unit 30, and the second Cooling unit 31. FIG. 7 is a block diagram showing the schematic configuration of the first heat treatment unit 7 in the substrate processing apparatus 1 according to the modification example viewed from the positive X-axis direction.

而且，變形例所涉及的基板處理裝置1係藉由第4搬運部71將基板S從搬入部70搬運至第1加熱單元30。再者，變形例所涉及的基板處理裝置1係藉由第4搬運部71將基板S從第1加熱單元30搬運至第2冷卻單元31。In addition, the substrate processing apparatus 1 according to the modified example transports the substrate S from the carry-in section 70 to the first heating unit 30 by the fourth transport section 71. In addition, the substrate processing apparatus 1 according to the modified example transports the substrate S from the first heating unit 30 to the second cooling unit 31 by the fourth transport section 71.

依此，變形例所涉及之基板處理裝置1與上述實施型態相同可以抑制第1搬運部10被加熱，抑制熱從第1搬運部10傳至基板S之情形。According to this, the substrate processing apparatus 1 according to the modified example can suppress the heating of the first conveying portion 10 and the transfer of heat from the first conveying portion 10 to the substrate S in the same manner as the aforementioned embodiment.

即使為適當組合上述實施型態及變形例之構成的基板處理裝置亦可。It may be a substrate processing apparatus that appropriately combines the configurations of the above-mentioned embodiments and modification examples.

另外，應該認為此次揭示的實施型態在任何方面都是例示並非用以限制者。實際上，上述實施型態可以以各種型態呈現。再者，上述實施型態在不脫離附件申請專利範圍和其主旨的情況下，即使以各種型態進行省略、替換和變更亦可。In addition, it should be considered that the implementation type disclosed this time is illustrative in any respect and not intended to limit. In fact, the above-mentioned implementation types can be presented in various types. Furthermore, the above-mentioned implementation types may be omitted, replaced, and changed in various types without departing from the scope of the appended patent application and the spirit thereof.

1:基板處理裝置 3:第1處理線(前處理線) 4:第2處理線(塗佈線) 5:第3處理線(顯像處理線) 6:減壓乾燥單元(載置部) 7:第1熱處理單元(載置部、熱處理部) 8:第2熱處理單元 9B:第2搬運部 10:第1搬運部 11:第3搬運部 27:光阻塗佈單元 30:第1加熱單元(加熱部) 31:第2冷卻單元(冷卻部) 50:第2加熱單元(顯像加熱部) 51:第3冷卻單元 60:曝光系統 61:曝光裝置 62:周邊裝置(外部裝置)1: Substrate processing equipment 3: The first processing line (pre-processing line) 4: The second processing line (coating line) 5: 3rd processing line (development processing line) 6: Decompression drying unit (placement part) 7: The first heat treatment unit (placement part, heat treatment part) 8: The second heat treatment unit 9B: Second Transport Department 10: The first transportation department 11: The third transportation department 27: Photoresist coating unit 30: The first heating unit (heating part) 31: The second cooling unit (cooling part) 50: The second heating unit (developing heating section) 51: 3rd cooling unit 60: Exposure system 61: Exposure device 62: Peripheral device (external device)

[圖1]係表示第1實施型態所涉及之基板處理裝置之概略構成的俯視圖。 [圖2]係表示第1實施型態所涉及之基板處理裝置之一部分之概略構成的左側方圖。 [圖3]係表示第1實施型態所涉及之基板處理之流程圖。 [圖4A]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其1)。 [圖4B]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其2)。 [圖4C]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其3)。 [圖4D]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其4)。 [圖4E]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其5)。 [圖4F]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其6)。 [圖4G]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其7)。 [圖4H]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其8)。 [圖4I]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其9)。 [圖4J]係表示第1實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其10)。 [圖5]為表示第2實施型態所涉及之基板處理裝置之概略構成的俯視圖。 [圖6A]係表示第2實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其1)。 [圖6B]係表示第2實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其2)。 [圖6C]係表示第2實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其3)。 [圖6D]係表示第2實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其4)。 [圖6E]係表示第2實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其5)。 [圖6F]係表示第2實施型態所涉及之基板處理裝置中之基板之搬運路徑的圖(其6)。 [圖7]係表示從X軸正方向觀看變形例所涉及的基板處理裝置中之第1熱處理單元之概略構成的方塊圖。Fig. 1 is a plan view showing a schematic configuration of the substrate processing apparatus according to the first embodiment. [Fig. 2] A left side view showing a schematic configuration of a part of the substrate processing apparatus according to the first embodiment. [Fig. 3] is a flowchart showing the substrate processing involved in the first embodiment. [Fig. 4A] is a diagram showing a conveying route of a substrate in the substrate processing apparatus according to the first embodiment (Part 1). [Fig. 4B] is a diagram showing the conveyance path of the substrate in the substrate processing apparatus according to the first embodiment (part 2). [Fig. 4C] is a diagram showing the conveying route of the substrate in the substrate processing apparatus according to the first embodiment (part 3). [Fig. 4D] is a diagram showing the conveyance path of the substrate in the substrate processing apparatus according to the first embodiment (part 4). [Fig. 4E] is a diagram showing the conveyance path of the substrate in the substrate processing apparatus according to the first embodiment (part 5). [Fig. 4F] is a diagram showing the conveyance path of the substrate in the substrate processing apparatus according to the first embodiment (No. 6). [Fig. 4G] is a diagram (7) showing the conveyance path of the substrate in the substrate processing apparatus according to the first embodiment. [Fig. 4H] is a diagram showing the conveyance path of the substrate in the substrate processing apparatus according to the first embodiment (No. 8). [Fig. 4I] is a diagram showing a conveyance path of a substrate in the substrate processing apparatus according to the first embodiment (No. 9). [FIG. 4J] is a diagram (10) showing the conveyance path of the substrate in the substrate processing apparatus according to the first embodiment. [Fig. 5] Fig. 5 is a plan view showing a schematic configuration of a substrate processing apparatus according to a second embodiment. [Fig. 6A] is a diagram showing a substrate transport path in the substrate processing apparatus according to the second embodiment (part 1). [Fig. 6B] is a diagram showing a substrate transport path in the substrate processing apparatus according to the second embodiment (part 2). [Fig. 6C] is a diagram showing the conveying path of the substrate in the substrate processing apparatus according to the second embodiment (part 3). [Fig. 6D] is a diagram showing the conveyance path of the substrate in the substrate processing apparatus according to the second embodiment (part 4). [Fig. 6E] is a diagram showing the conveyance path of the substrate in the substrate processing apparatus according to the second embodiment (part 5). [Fig. 6F] is a diagram showing the conveyance path of the substrate in the substrate processing apparatus according to the second embodiment (No. 6). Fig. 7 is a block diagram showing the schematic configuration of the first heat treatment unit in the substrate processing apparatus according to the modification as viewed from the positive X-axis direction.

1:基板處理裝置 1: Substrate processing equipment

2:卡匣站 2: Cassette station

3:第1處理線(前處理線) 3: The first processing line (pre-processing line)

4:第2處理線(塗佈線) 4: The second processing line (coating line)

6:減壓乾燥單元(載置部) 6: Decompression drying unit (placement part)

7:第1熱處理單元(載置部、熱處理部) 7: The first heat treatment unit (placement part, heat treatment part)

8:第2熱處理單元 8: The second heat treatment unit

9:介面站 9: Interface station

9A:旋轉台 9A: Rotating table

9B:第2搬運部 9B: Second Transport Department

9C:搬運臂 9C: Handling arm

10:第1搬運部 10: The first transportation department

10A:搬運臂 10A: Handling arm

11:第3搬運部 11: The third transportation department

11A:搬運臂 11A: Handling arm

12:控制裝置 12: Control device

12A:控制部 12A: Control Department

12B:記憶部 12B: Memory Department

13:載置台 13: Mounting table

14:搬運裝置 14: Handling device

14a:搬運臂 14a: Carrying arm

20:準分子UV照射單元 20: Excimer UV irradiation unit

21:擦淨洗淨單元 21: Wipe and wash unit

22:預熱單元 22: Preheating unit

23:黏著單元 23: Adhesive unit

24:第1冷卻單元 24: 1st cooling unit

25:搬出部 25: Moving out department

27:光阻塗佈單元 27: Photoresist coating unit

30:第1加熱單元(加熱部) 30: The first heating unit (heating part)

31:第2冷卻單元(冷卻部) 31: The second cooling unit (cooling part)

50:第2加熱單元(顯像加熱部) 50: The second heating unit (developing heating section)

60:曝光系統 60: Exposure system

61:曝光裝置 61: Exposure device

62:周邊裝置(外部裝置) 62: Peripheral device (external device)

65:檢查單元 65: inspection unit

C:卡匣 C: Cassette

S:玻璃基板 S: Glass substrate

Claims (9)

一種基板處理裝置，具有： 前處理線，其係對基板進行前處理； 塗佈線，其係相對於上述前處理線被並聯配置，對被進行上述前處理後的上述基板塗佈處理液； 顯像處理線，其係被配置在上述前處理線之上方或下方，對被塗佈上述處理液後的上述基板進行顯像處理； 第1搬運部，其係被設置在上述前處理線和上述塗佈線之間，將上述基板從上述前處理線搬運至上述塗佈線； 第2搬運部，其係相對於上述第1搬運部被串聯配置，將上述基板經由外部裝置搬運至上述顯像處理線；及 第3搬運部，其係相對於上述第1搬運部被串聯配置，從上述顯像處理線搬運上述基板。A substrate processing device having: Pre-processing line, which is to pre-process the substrate; A coating line, which is arranged in parallel with respect to the pretreatment line, and applies a treatment liquid to the substrate after the pretreatment is performed; A development processing line, which is arranged above or below the pre-processing line, and performs development processing on the substrate after being coated with the processing liquid; A first conveying part, which is provided between the pre-processing line and the coating line, and conveys the substrate from the pre-processing line to the coating line; A second conveying section, which is arranged in series with respect to the first conveying section, and conveys the substrate to the development processing line via an external device; and The third conveyance section is arranged in series with respect to the first conveyance section, and conveys the substrate from the development processing line. 如請求項1之基板處理裝置，其中 具備載置部，其係被配置在上述第1搬運部和上述第3搬運部之間，藉由上述第1搬運部載置被塗佈上述處理液後的上述基板。Such as the substrate processing apparatus of claim 1, wherein A mounting part is provided, which is arranged between the first conveying part and the third conveying part, and the substrate coated with the processing liquid is placed by the first conveying part. 如請求項2之基板處理裝置，其中 上述第3搬運部能夠從上述載置部搬運上述基板。Such as the substrate processing apparatus of claim 2, wherein The said 3rd conveyance part can convey the said board|substrate from the said placement part. 如請求項2或3之基板處理裝置，其中 上述載置部係對被塗佈上述處理液後的上述基板進行熱處理的熱處理部。Such as the substrate processing apparatus of claim 2 or 3, wherein The mounting part is a heat treatment part that heat-treats the substrate after the treatment liquid is applied. 如請求項2或3之基板處理裝置，其中 具備熱處理部，其係被配置在上述第1搬運部和上述第2搬運部之間，藉由上述第1搬運部從上述載置部搬運上述基板，對上述基板進行熱處理， 上述載置部係對被塗佈上述處理液後的上述基板進行減壓乾燥處理的減壓乾燥部， 上述第2搬運部係從上述熱處理部搬運上述基板。Such as the substrate processing apparatus of claim 2 or 3, wherein A heat treatment section is provided, which is arranged between the first conveying section and the second conveying section, and the substrate is conveyed from the placement section by the first conveying section to heat the substrate, The placing section is a vacuum drying section that performs a vacuum drying process on the substrate after the treatment liquid is applied, and The second conveyance unit conveys the substrate from the heat treatment unit. 如請求項4或5之基板處理裝置，其中 上述熱處理部具備： 加熱部，其係加熱上述基板；和 冷卻部，其係冷卻藉由上述加熱部被加熱後的上述基板， 上述冷卻部係藉由上述第1搬運部搬入被塗佈上述處理液後的上述基板，並且藉由上述第1搬運部搬出被冷卻後的上述基板。Such as the substrate processing apparatus of claim 4 or 5, wherein The above heat treatment department has: A heating section, which heats the above-mentioned substrate; and The cooling part cools the substrate heated by the heating part, The cooling unit carries in the substrate coated with the processing liquid by the first transport unit, and transports the cooled substrate by the first transport unit. 如請求項4或5之基板處理裝置，其中 上述熱處理部具備： 搬入部，其係藉由上述第1搬運部搬運被塗佈上述處理液後的上述基板； 加熱部，其係藉由與上述第1搬運部不同的第4搬運部，從上述搬入部搬運上述基板，加熱上述基板； 冷卻部，其係藉由上述第4搬運部從上述加熱部搬運上述基板，冷卻藉由上述加熱部被加熱後的上述基板。Such as the substrate processing apparatus of claim 4 or 5, wherein The above heat treatment department has: A carrying-in part, which transports the substrate coated with the processing liquid by the first carrying part; A heating section, which is a fourth transport section different from the first transport section, transports the substrate from the carry-in section, and heats the substrate; The cooling unit conveys the substrate from the heating unit by the fourth conveying unit, and cools the substrate heated by the heating unit. 如請求項1至7中之任一項之基板處理裝置，其中 具備顯像加熱部，其係相對於上述第1搬運部被串聯配置，加熱被進行上述顯像處理後的上述基板， 上述第3搬運部係將上述基板從上述顯像處理線搬運至上述顯像加熱部。Such as the substrate processing apparatus of any one of claims 1 to 7, wherein A development heating unit is provided, which is arranged in series with the first conveying unit and heats the substrate after the development process has been performed, The third conveying section conveys the substrate from the development processing line to the development heating section. 一種基板處理方法，具有： 第1搬運工程，其係將藉由前處理線被進行前處理後的基板，藉由被設置在上述前處理線，和相對於上述前處理線被並聯配置，在上述基板塗佈處理液的塗佈線之間的第1搬運部，搬運至上述塗佈線； 第2搬運工程，其係將被塗佈上述處理液後的上述基板，藉由相對於上述第1搬運部被串聯配置的第2搬運部，經由外部裝置搬運至被配置在上述前處理線之上方或下方，進行顯像處理的顯像處理線；及 第3搬運工程，其係藉由相對於上述第1搬運部被串聯配置的第3搬運部，從上述顯像處理線，搬運被進行上述顯像處理後的上述基板。A substrate processing method has: The first conveying process involves applying the substrate pre-processed by the pre-processing line to the pre-processing line, which is arranged in parallel with the pre-processing line, and the process liquid is applied to the substrate. The first transfer part between the coating lines is transported to the above coating line; The second conveying process involves conveying the substrate after the treatment liquid has been applied to the substrate arranged in the pre-processing line via a second conveying section arranged in series with the first conveying section via an external device. Above or below, the development processing line for development processing; and The third conveyance process involves conveying the substrate after the development process has been performed from the development processing line by a third conveyance part arranged in series with the first conveyance part.
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