TW202017125A - 半導體封裝 - Google Patents

半導體封裝 Download PDF

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TW202017125A
TW202017125A TW108120962A TW108120962A TW202017125A TW 202017125 A TW202017125 A TW 202017125A TW 108120962 A TW108120962 A TW 108120962A TW 108120962 A TW108120962 A TW 108120962A TW 202017125 A TW202017125 A TW 202017125A
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heat sink
semiconductor package
chip
patent application
item
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TWI811383B (zh
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張愛妮
白承德
金泰憲
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南韓商三星電子股份有限公司
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Abstract

一種半導體封裝可包括封裝基板、中間層、邏輯晶片、至少一個記憶體晶片及散熱器。所述中間層可位於所述封裝基板的上表面之上。所述中間層可與所述封裝基板電連接。所述邏輯晶片可位於所述中間層的上表面之上。所述邏輯晶片可與所述中間層電連接。所述記憶體晶片可位於所述中間層的上表面之上。所述記憶體晶片可與所述中間層及所述邏輯晶片電連接。所述散熱器可與所述邏輯晶片的上表面進行熱接觸，以耗散所述邏輯晶片中的熱量。

Description

半導體封裝
各示例性實施例有關一種半導體封裝。更具體來說，各示例性實施例有關一種包括記憶體晶片及邏輯晶片的系統級封裝。 [相關申請的交叉參考]
本申請依據35 USC § 119主張2018年10月22日在韓國智慧財產權局（Korean Intellectual Property Office，KIPO）提出申請的韓國專利申請第10-2018-0125678號的優先權，所述韓國專利申請的公開內容全部併入本文中供參考。
系統級封裝（system in package或system-in-a-package，SiP）通常包括被包含於同一晶片載體封裝中的多個積體電路。舉例來說，所述系統級封裝可包括安裝在同一晶片載體封裝內的多個記憶體晶片及邏輯晶片。在此種情形中，記憶體晶片及邏輯晶片可通過位於所述晶片與系統級封裝的系統基板之間的中間層（interposer）而彼此電連接。分別地，系統級封裝的各晶片可具有不同的厚度。舉例來說，一個或多個記憶體晶片可具有由經堆疊記憶體晶片形成的多晶片式結構。因此，這些多晶片式記憶體晶片可具有可比邏輯晶片的厚度大的厚度。
根據示例性實施例，一種半導體封裝可包括：封裝基板；中間層，位於所述封裝基板的上表面之上且電連接到所述封裝基板；邏輯晶片，位於所述中間層的上表面之上且電連接到所述中間層；記憶體晶片，位於所述中間層的所述上表面之上且電連接到所述中間層及所述邏輯晶片；以及散熱器，與所述邏輯晶片的上表面進行熱接觸，以耗散所述邏輯晶片中的熱量。
根據示例性實施例，一種半導體封裝可包括：封裝基板；中間層，位於所述封裝基板的上表面之上且與所述封裝基板電連接；邏輯晶片，位於所述中間層的上表面之上且與所述中間層電連接；以及記憶體晶片，位於所述中間層的所述上表面之上且與所述中間層及所述邏輯晶片電連接，其中所述記憶體晶片具有比所述邏輯晶片的上表面高的上表面。所述半導體封裝可更包括：散熱器，與所述邏輯晶片的所述上表面進行熱接觸，以耗散所述邏輯晶片中的熱量，所述散熱器具有與所述記憶體晶片的所述上表面共面的上表面；以及主散熱器，與所述記憶體晶片的及所述散熱器的所述上表面進行接觸，以耗散所述記憶體晶片及所述散熱器中的熱量。
根據示例性實施例，一種半導體封裝可包括：封裝基板；中間層，位於所述封裝基板的上表面之上且與所述封裝基板電連接；邏輯晶片，位於所述中間層的上表面之上且與所述中間層電連接；記憶體晶片，位於所述中間層的所述上表面之上且與所述中間層及所述邏輯晶片電連接，其中所述記憶體晶片具有可比所述邏輯晶片的上表面高的上表面。所述半導體封裝可更包括主散熱器，所述主散熱器包括與所述記憶體晶片的所述上表面進行熱接觸的第一下表面以及屬於從所述下表面延伸出的熱傳遞部分且與所述邏輯晶片的所述上表面進行熱接觸的第二下表面，以耗散所述記憶體晶片及所述邏輯晶片中的熱量。
在下文中，將參照所附圖式詳細地解釋各示例性實施例。
圖1是示出根據示例性實施例的半導體封裝的剖視圖，圖2是圖1所示半導體封裝的示意性平面圖，且圖3是圖1所示半導體封裝的上面安裝有晶片的中間層的示意性平面圖。應注意，各圖式僅為示意圖，且圖1所示的相對尺寸不同於圖2及圖3所示的相對尺寸。
在圖1所示實施例的實例中，半導體封裝包括封裝基板110、中間層120、邏輯晶片130、多個記憶體晶片140、散熱器150及包封部件180。所述半導體封裝可例如為系統級封裝（SiP）。
封裝基板110可包括導電線（圖中未示出）。所述導電線中的每一者可包括沿著封裝基板110的上表面及/或下表面延伸的導電跡線、及/或在封裝基板110的上表面與下表面之間延伸的導通孔。然而，各實施例可不僅限於封裝基板110的導電線的任何特定配置。此外，所述導電線中的每一者可具有端接在外部端子160及164處的相對兩端。外部端子160可例如為位於中間層120與封裝基板110之間的焊料球或凸塊。外部端子164可例如為位於封裝基板110的下表面上的焊料球或凸塊。然而，再次，各實施例可不僅限於外部端子160及164的任何特定配置。
在圖1至圖3所示的實例中，中間層120可佈置在封裝基板110的上表面之上。
中間層120可包括絕緣基板、多個連接通孔122（僅圖1中示出）及多個導電圖案124（僅圖3中示出）。連接通孔122可垂直延伸穿過絕緣基板，使得上端部可在中間層120的上表面處暴露出且下端部可在中間層120的下表面處暴露出。連接通孔122的下端部可通過外部端子160與封裝基板110中的導電線電連接。這樣一來，封裝基板110及中間層120可通過外部端子160彼此電連接。如圖3中所示，導電圖案124可佈置在中間層120的上表面上。
邏輯晶片130可佈置在中間層120的上表面上。在示例性實施例中，邏輯晶片130可佈置在中間層120的上表面的中心部分上。在邏輯晶片130的下表面上可佈置有接墊。因此，邏輯晶片130的下表面可對應於邏輯晶片130的主動面。邏輯晶片130可通過導電凸塊162與中間層120電連接。也就是說，邏輯晶片130的接墊可通過導電凸塊162與中間層120中的連接通孔122的上端部電連接。
參照圖1及圖3，記憶體晶片140可佈置在中間層120的上表面上。記憶體晶片140中的每一者可包括接墊。所述接墊可佈置在記憶體晶片140中的每一者的下表面上。因此，記憶體晶片140的下表面可對應於記憶體晶片140的主動面。記憶體晶片140可通過導電凸塊162與中間層120電連接。也就是說，記憶體晶片140的接墊可通過導電凸塊162與中間層120中的連接通孔122的上端部電連接。在示例性實施例中，記憶體晶片140中的至少一者可包括高頻寬記憶體（high bandwidth memory，HBM）晶片。
在示例性實施例中，各記憶體晶片140可被佈置成環繞邏輯晶片130。記憶體晶片140可通過中間層120的上表面上的導電圖案124與邏輯晶片130電連接。
此外，記憶體晶片140中的一者或多者可具有其中相對於封裝基板110的水準表面垂直堆疊兩個或更多個記憶體晶片的多晶片式結構。記憶體晶片140中的每一者的經堆疊晶片的數目可不受限且可為四個、八個、十二個、十六個等。記憶體晶片140的多晶片式結構可具有可比邏輯晶片130的厚度大的厚度。因此，邏輯晶片130的上表面可被定位於的平面低於記憶體晶片140的上表面可被定位於的平面。
散熱器150可佈置在邏輯晶片130的上表面上。散熱器150可與邏輯晶片130的上表面進行熱接觸，以耗散從邏輯晶片130產生的熱量。散熱器150可具有可與邏輯晶片130的寬度實質上相同的寬度。散熱器150可具有可與邏輯晶片130的長度實質上相同的長度。因此，散熱器150可具有與邏輯晶片130的側表面共面的側表面。
在示例性實施例中，散熱器150可具有與記憶體晶片140的上表面共面的上表面。由於散熱器150的上表面可與記憶體晶片140的上表面共面，因此可通過以下製程在記憶體晶片140之上容易地形成結構。舉例來說，如在下一實施例中所述，可在記憶體晶片140的上表面上輕易地佈置用於耗散記憶體晶片140中的熱量的主散熱器。可根據經堆疊記憶體晶片140的厚度來確定散熱器150的厚度。作為另一選擇，散熱器150的上表面可高於或低於記憶體晶片140的上表面。
散熱器150可為虛設晶片。舉例來說，可使用在半導體製作製程中被確定為有缺陷的虛設晶片作為散熱器150。因此，散熱器150可包括虛設晶片的矽。
散熱器150可使用熱傳遞黏合劑170附著到邏輯晶片130的上表面。熱傳遞黏合劑170可用以將邏輯晶片130中的熱量傳遞到散熱器150。在示例性實施例中，熱傳遞黏合劑170可包含熱介面材料（thermal interface material，TIM）。
可例如通過將包封劑供應到容納半導體封裝的模具中來形成包封部件180。包封部件180可佈置在中間層120的上表面與記憶體晶片140的下表面之間的空間、記憶體晶片140的內側表面與邏輯晶片130的外側表面及散熱器150的外側表面之間的空間中、以及記憶體晶片140的外側表面上。包封部件180可具有與記憶體晶片140的及散熱器150的上表面共面的上表面。
圖4是示出根據示例性實施例的半導體封裝的剖視圖。
在圖4所示實施例的實例中，半導體封裝可包括封裝基板110、中間層120、邏輯晶片130、多個記憶體晶片140、散熱器150、主散熱器155及包封部件180。
圖4所示封裝基板110、中間層120、邏輯晶片130、記憶體晶片140、散熱器150及包封部件180可與前面所述的圖1至圖3所示者相同或實質上相同。因此，此處不再對此類元件予以贅述，以避免冗餘。
圖4所示實例與圖1至圖3所示實例的不同在於另外設置了主散熱器155。
參照圖4，主散熱器155可佈置在記憶體晶片140的及散熱器150的上表面上。主散熱器155可耗散記憶體晶片140中的熱量及散熱器150中的熱量。也就是說，主散熱器155可直接耗散記憶體晶片140中的熱量。此外，主散熱器155可通過散熱器150間接耗散邏輯晶片130中的熱量。
在示例性實施例中，主散熱器155可具有平坦下表面。如以上所提及，由於散熱器150的上表面及記憶體晶片140的上表面可彼此共面，因此主散熱器155的平坦下表面與散熱器150的上表面及記憶體晶片140的上表面之間的接觸面積可擴展。因此，從散熱器150及記憶體晶片140到主散熱器155的熱傳遞比率可提高。
主散熱器155可使用熱傳遞黏合劑172附著到記憶體晶片140的及散熱器150的上表面。熱傳遞黏合劑172可將記憶體晶片140及散熱器150中的熱量傳遞到主散熱器155。在示例性實施例中，熱傳遞黏合劑172可包含熱介面材料（TIM）。
在示例性實施例中，主散熱器155可具有與包封部件180的外側表面共面的外側表面。作為另一選擇，如同在圖4所示的實例中，主散熱器155的外側表面可相對於包封部件180的外側表面水準突出。此外，主散熱器155可包含金屬。作為另一選擇，主散熱器155可包含矽。
圖5是示出根據示例性實施例的半導體封裝的剖視圖。
在圖5所示實施例的實例中，半導體封裝可包括封裝基板110、中間層120、邏輯晶片130、多個記憶體晶片140、集成式散熱器190及包封部件180。
圖5所示封裝基板110、中間層120、邏輯晶片130、記憶體晶片140及包封部件180可與前面所述的圖1至圖3所示者相同或實質上相同。因此，此處不再對此類元件予以贅述，以避免冗餘。
圖5所示實例與圖4所示實例的不同在於，圖4所示散熱器150及主散熱器155被替換成圖5所示集成式散熱器190。如圖5中所示，集成式散熱器190可為位於記憶體晶片140的上表面之上的單件式散熱器，其具有位於中心且在邏輯晶片130的上表面之上向下突出的熱傳遞部分192。也就是說，如同在圖5所示實例中，集成式散熱器190可具有：第一下表面，被配置成使用熱傳遞黏合劑172與記憶體晶片140的上表面進行熱接觸；以及屬於熱傳遞部分192的第二下表面，由所述第一下表面環繞並低於所述第一下表面且被配置成使用熱傳遞黏合劑172與邏輯晶片130的上表面進行熱接觸。作為實例，集成式散熱器190可由金屬或矽形成。
在圖5所示實例中，在邏輯晶片130中產生的熱量可通過集成式散熱器190的中心下平坦表面（即，熱傳遞部分192的下表面）而耗散，且在記憶體晶片140中產生的熱量可通過集成式散熱器190的外下平坦表面而耗散。
根據示例性實施例，散熱器可與邏輯晶片的上表面進行接觸，以通過散熱器有效地耗散邏輯晶片中的熱量。此外，散熱器的上表面可與記憶體晶片的上表面共面，以擴展主散熱器與記憶體晶片之間以及主散熱器與散熱器的上表面之間的接觸面積。因此，邏輯晶片及記憶體晶片中的熱量可通過主散熱器而有效地耗散。
以上內容是對示例性實施例的說明，而不應被解釋為限制各實施例。雖然已闡述了幾個示例性實施例，然而所屬領域中的技術人員應易於瞭解，在不本質上背離本發明概念的新穎教示內容及優點的條件下，可對示例性實施例作出許多修改。因此，所有此種修改均旨在包含於在申請專利範圍中所界定的本發明概念的範圍內。在申請專利範圍中，構件加功能（means-plus-function）條款旨在涵蓋本文中闡述為執行所述功能的結構，且不僅涵蓋結構性等效物而且也涵蓋等效結構。因此，應理解，以上內容是對各種示例性實施例的說明，而不應被解釋為僅限於所公開的具體示例性實施例，且對所揭露示例性實施例的修改以及其他示例性實施例均旨在包含於所附申請專利範圍的範圍內。
110:封裝基板 120:中間層 122:連接通孔 124:導電圖案 130:邏輯晶片 140:記憶體晶片 150:散熱器 155:主散熱器 160、164:外部端子 162:導電凸塊 170、172:熱傳遞黏合劑 180:包封部件 190:集成式散熱器 192:熱傳遞部分
結合所附圖式閱讀以下詳細說明，將會更清楚地理解各示例性實施例。圖1至圖5表示本文中所述的非限制性示例性實施例。 圖1是示出根據示例性實施例的半導體封裝的剖視圖。 圖2是示出圖1所示半導體封裝的示意性平面圖。 圖3是示出圖1所示半導體封裝的上面安裝有晶片的中間層的示意性平面圖。 圖4是示出根據其他示例性實施例的半導體封裝的剖視圖。 圖5是示出根據又一些示例性實施例的半導體封裝的剖視圖。
110:封裝基板
120:中間層
122:連接通孔
130:邏輯晶片
140:記憶體晶片
150:散熱器
160、164:外部端子
162:導電凸塊
170:熱傳遞黏合劑
180:包封部件

Claims (25)

  1. 一種半導體封裝，包括： 封裝基板； 中間層，位於所述封裝基板的上表面之上且電連接到所述封裝基板； 邏輯晶片，位於所述中間層的上表面之上且電連接到所述中間層； 記憶體晶片，位於所述中間層的所述上表面之上且電連接到所述中間層及所述邏輯晶片；以及 散熱器，與所述邏輯晶片的上表面進行熱接觸，以耗散所述邏輯晶片中的熱量。
  2. 如申請專利範圍第1項所述的半導體封裝，其中所述散熱器包括虛設晶片。
  3. 如申請專利範圍第2項所述的半導體封裝，其中所述虛設晶片包含矽。
  4. 如申請專利範圍第1項所述的半導體封裝，其中所述散熱器具有與所述記憶體晶片的上表面共面的上表面。
  5. 如申請專利範圍第1項所述的半導體封裝，更包括夾置在所述邏輯晶片與所述散熱器之間的熱傳遞黏合劑。
  6. 如申請專利範圍第5項所述的半導體封裝，其中所述熱傳遞黏合劑包含熱介面材料。
  7. 如申請專利範圍第1項所述的半導體封裝，更包括與所述記憶體晶片的上表面及所述散熱器的上表面進行熱接觸的主散熱器，以耗散所述記憶體晶片及所述散熱器中的熱量。
  8. 如申請專利範圍第7項所述的半導體封裝，其中所述主散熱器包含金屬。
  9. 如申請專利範圍第7項所述的半導體封裝，更包括夾置在所述主散熱器與所述記憶體晶片的所述上表面之間以及所述主散熱器與所述散熱器的所述上表面之間的熱傳遞黏合劑。
  10. 如申請專利範圍第9項所述的半導體封裝，其中所述熱傳遞黏合劑包含熱介面材料。
  11. 如申請專利範圍第1項所述的半導體封裝，其中所述記憶體晶片具有比所述邏輯晶片的厚度大的厚度、以及比所述邏輯晶片的所述上表面高的上表面。
  12. 如申請專利範圍第1項所述的半導體封裝，其中所述記憶體晶片包括環繞所述邏輯晶片的多個記憶體晶片。
  13. 如申請專利範圍第12項所述的半導體封裝，其中所述記憶體晶片中的至少一者具有包括經垂直堆疊記憶體晶片的多晶片式結構。
  14. 如申請專利範圍第1項所述的半導體封裝，其中所述中間層包括： 絕緣基板； 多個連接通孔，垂直佈置在所述絕緣基板中且與所述封裝基板電連接；以及 多個導電圖案，佈置在所述絕緣基板的上表面上，以將所述記憶體晶片與所述邏輯晶片電連接。
  15. 如申請專利範圍第14項所述的半導體封裝，更包括導電凸塊，所述導電凸塊位於所述連接通孔與所述記憶體晶片之間以及所述連接通孔與所述邏輯晶片之間。
  16. 如申請專利範圍第14項所述的半導體封裝，更包括位於所述連接通孔與所述封裝基板之間的導電凸塊。
  17. 如申請專利範圍第1項所述的半導體封裝，更包括包封部件，所述包封部件佈置在所述中間層與所述記憶體晶片之間的空間、所述記憶體晶片與所述邏輯晶片之間的空間、所述記憶體晶片與所述散熱器之間的空間中、以及所述記憶體晶片的外側表面上。
  18. 如申請專利範圍第17項所述的半導體封裝，其中所述包封部件具有與所述記憶體晶片的上表面及所述散熱器的上表面共面的上表面。
  19. 如申請專利範圍第1所述的半導體封裝，更包括安裝在所述封裝基板的下表面上的外部端子。
  20. 一種半導體封裝，包括： 封裝基板； 中間層，位於所述封裝基板的上表面之上且與所述封裝基板電連接； 邏輯晶片，位於所述中間層的上表面之上且與所述中間層電連接； 記憶體晶片，位於所述中間層的所述上表面之上且與所述中間層及所述邏輯晶片電連接，所述記憶體晶片具有比所述邏輯晶片的上表面高的上表面； 散熱器，與所述邏輯晶片的所述上表面進行熱接觸，以耗散所述邏輯晶片中的熱量，所述散熱器具有與所述記憶體晶片的所述上表面共面的上表面；以及 主散熱器，與所述記憶體晶片的所述上表面及所述散熱器的所述上表面進行熱接觸，以耗散所述記憶體晶片及所述散熱器中的熱量。
  21. 如申請專利範圍第20項所述的半導體封裝，其中所述散熱器包括虛設晶片。
  22. 如申請專利範圍第21項所述的半導體封裝，其中所述虛設晶片包含矽。
  23. 如申請專利範圍第20項所述的半導體封裝，更包括夾置在所述邏輯晶片與所述散熱器之間的熱傳遞黏合劑。
  24. 如申請專利範圍第20項所述的半導體封裝，更包括夾置在所述主散熱器與所述記憶體晶片之間以及所述主散熱器與所述散熱器之間的熱傳遞黏合劑。
  25. 如申請專利範圍第20項所述的半導體封裝，其中所述記憶體晶片包括環繞所述邏輯晶片的多個記憶體晶片。
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