TW202000372A - Grinding stone sharpening method and wafer for grinding reduces the number of dummy wafers used during sharpening operations - Google Patents

Grinding stone sharpening method and wafer for grinding reduces the number of dummy wafers used during sharpening operations Download PDF

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TW202000372A
TW202000372A TW108121290A TW108121290A TW202000372A TW 202000372 A TW202000372 A TW 202000372A TW 108121290 A TW108121290 A TW 108121290A TW 108121290 A TW108121290 A TW 108121290A TW 202000372 A TW202000372 A TW 202000372A
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grinding
sharpening
chuck table
workpiece
stone
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TW108121290A
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TWI799605B (en
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廣沢俊一郎
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日商迪思科股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention provides a grinding stone sharpening method, which can reduce the number of dummy wafers used during the sharpening operation while efficiently carrying out grinding and sharpening operations on grinding stones. A method for sharpening grinding stones is carried out by using a grinding device, and the grinding device is provided with a chuck table for holding a workpiece with a holding surface; a grinding unit which installs a grinding wheel annularly provided with multiple grinding stones on a main shaft of a rotating shaft perpendicular to the holding surface to grind a workpiece held on the chuck table; a grinding feeding unit which grindingly feeds the grinding unit in the direction of the rotation axis. The method for sharpening grinding stones is characterized in that the main shaft is rotated while grindingly feeding the grinding unit, so that a workpiece held on the chuck table is ground without rotating the chuck table, and an arc-shaped ground groove is formed on the surface of the workpiece.

Description

研削磨石磨銳方法以及磨銳用晶圓Grinding sharpening method of grinding stone and wafer for sharpening

本發明係關於一種磨銳研削磨石的研削面之研削磨石磨銳方法以及磨銳用晶圓。The invention relates to a grinding stone sharpening method and a wafer for sharpening a grinding surface of a sharpening grinding stone.

在研削半導體晶圓等各種板狀工件時，使用在輪基台環狀配設有多個研削磨石的研削輪。研削磨石係將金剛石磨粒以樹脂結合劑或陶瓷結合劑、金屬結合劑等固定而形成，藉由在磨粒因結合劑部分地突出即所謂磨銳的狀態而可得良好的研削結果。When grinding various plate-shaped workpieces such as semiconductor wafers, a grinding wheel in which a plurality of grinding stones are annularly arranged on the wheel base is used. The grinding stone is formed by fixing diamond abrasive particles with a resin binder, a ceramic binder, a metal binder, or the like. By grinding the abrasive particles partially due to the binder, a so-called sharpened state, a good grinding result can be obtained.

因此，需要進行在研削前藉由研削製品以外的工件，使結合劑消耗而使磨粒突出的修整（dressing）作業，以及為了將突出狀態設為對製品最適合狀態的磨銳作業（預研削或預切割）。Therefore, it is necessary to perform a dressing operation in which the abrasive particles are protruded by grinding the workpiece other than the product before grinding, and the abrasive is protruded (pre-grinding) in order to set the protruding state to the most suitable state for the product Or pre-cut).

通常磨銳作業係研削與製品相同材質之物而實施，故例如在矽晶圓為製品的情況，將擬真（dummy）矽晶圓進行多片研削而實施磨銳作業。 [習知技術文獻] [專利文獻]Generally, sharpening is performed by grinding the same material as the product. Therefore, for example, in the case where the silicon wafer is a product, multiple dummy silicon wafers are ground to perform sharpening. [Conventional Technical Literature] [Patent Literature]

[專利文獻1]日本特開2008-221360號公報[Patent Document 1] Japanese Unexamined Patent Publication No. 2008-221360

[發明所欲解決的課題] 但是，將擬真矽晶圓進行多片研削而實施磨銳作業的話，會有產生用來準備多片擬真矽晶圓的成本之課題。[Problems to be solved by the invention] However, if multiple silicon wafers are ground and sharpened, the cost of preparing multiple silicon wafers will be a problem.

本發明鑒於上述的問題點，以此為目的提供一種研削磨石磨銳方法，其可減少在磨銳作業使用的擬真晶圓的使用片數，可有效率地實施研削磨石的磨銳作業。In view of the above-mentioned problems, the present invention aims to provide a grinding stone sharpening method, which can reduce the number of simulative wafers used in the sharpening operation, and can efficiently perform grinding of the grinding stone operation.

[解決課題的技術手段] 根據申請專利範圍第1項所述之發明，提供一種研削磨石磨銳方法，係使用研削裝置進行，該研削裝置具備：卡盤台，以保持面將工件保持；研削單元，將環狀配置有多個研削磨石之研削輪裝設於具有與該保持面垂直的旋轉軸之主軸，研削保持於該卡盤台的工件；研削進給單元，將該研削單元在該旋轉軸方向研削進給；該研削磨石磨銳方法之特徵在於：一邊使該主軸旋轉一邊研削進給該研削單元，使該卡盤台不旋轉而研削保持於該卡盤台的工件，並在該工件的表面形成圓弧狀的研削槽。[Technical means to solve the problem] According to the invention described in item 1 of the patent application scope, a grinding stone sharpening method is provided, which is performed using a grinding device equipped with: a chuck table to hold a workpiece with a holding surface; a grinding unit, which is arranged in a ring shape A grinding wheel with a plurality of grinding stones is mounted on a spindle with a rotation axis perpendicular to the holding surface, grinding the workpiece held on the chuck table; grinding feed unit, grinding the grinding unit in the direction of the rotation axis The characteristic of the grinding stone sharpening method is: grinding the feed unit while rotating the main shaft, grinding the workpiece held on the chuck table without rotating the chuck table, and on the surface of the workpiece A circular grinding groove is formed.

較佳為，在工件形成多條圓弧狀的研削槽，控制研削磨石的磨銳狀態。Preferably, a plurality of arc-shaped grinding grooves are formed on the workpiece to control the sharpening state of the grinding stone.

根據申請專利範圍第3項所述之發明，提供一種磨銳用晶圓，用來藉由研削讓研削磨石磨銳，並形成1條或多條的圓弧狀的研削槽。According to the invention described in item 3 of the patent application scope, a wafer for sharpening is provided for sharpening a grinding stone by grinding and forming one or more circular grinding grooves.

[發明功效] 根據本發明的研削磨石磨銳方法，因為使保持工件的卡盤台不旋轉地進行工件的研削，對研削磨石產生較高負荷，即使研削體積減少仍能得到高磨銳效果，可減少在磨銳作業使用工件的片數。另外，能夠配合磨銳狀況在1片的工件形成多條圓弧狀的研削槽，故不會增加工件的使用量而有可調整磨銳研削量的效果。[Effect of invention] According to the grinding method of the grinding stone of the present invention, the grinding of the workpiece is carried out without rotating the chuck table holding the workpiece, which results in a higher load on the grinding stone, and a high grinding effect can be obtained even if the grinding volume is reduced, which can be reduced The number of pieces used in sharpening operations. In addition, a plurality of arc-shaped grinding grooves can be formed on one workpiece in accordance with the grinding situation, so the grinding grinding amount can be adjusted without increasing the use amount of the workpiece.

進而，因為在本發明的磨銳方法所使用的工件形成有環狀的研削槽，相較於平坦的工件研削負荷較高，故亦具有可作為一般磨銳作業時的工件使用的效果，該一般磨銳作業係使保持工件的卡盤台旋轉並使研削磨石研削而實施磨銳作業。Furthermore, since the workpiece used in the sharpening method of the present invention is formed with an annular grinding groove and has a higher grinding load than a flat workpiece, it also has an effect that it can be used as a workpiece for general sharpening operations. The general sharpening operation is to rotate the chuck table holding the workpiece and grind the grinding stone to perform the sharpening operation.

以下參閱圖式詳細說明本發明的實施方式。參閱圖1，其係表示適於實施本發明的磨銳方法的研削裝置2之外觀立體圖。4係研削裝置2的基底，在基底4的後方立設有柱6。在柱6固定有在上下方向延伸的一對導軌8。The embodiments of the present invention will be described in detail below with reference to the drawings. Referring to FIG. 1, it is an external perspective view of a grinding device 2 suitable for implementing the sharpening method of the present invention. The base of the 4 series grinding device 2 is provided with a post 6 standing behind the base 4. A pair of guide rails 8 extending in the vertical direction is fixed to the column 6.

沿著該對導軌8裝設有在上下方向可移動的研削單元（研削手段）10。研削單元10具有主軸外殼12，以及保持主軸外殼12的支撐部14，支撐部14安裝於沿著一對導軌8在上下方向移動的移動基台16。Along the pair of guide rails 8, a grinding unit (grinding means) 10 movable in the up-down direction is installed. The grinding unit 10 includes a spindle housing 12 and a support portion 14 that holds the spindle housing 12. The support portion 14 is attached to a moving base 16 that moves in a vertical direction along a pair of guide rails 8.

研削單元10包含：主軸18，可旋轉地容納於主軸外殼12中；馬達20，將主軸18旋轉驅動；輪安裝件22，固定於主軸18的前端；以及研削輪24，可裝卸地裝設於輪安裝件22。Grinding unit 10 includes: a spindle 18, which is rotatably housed in the spindle housing 12; a motor 20, which rotates and drives the spindle 18; a wheel mounting member 22, fixed to the front end of the spindle 18; and a grinding wheel 24, which is detachably mounted on轮Installed part 22.

研削裝置2具備研削進給單元34，其由將研削單元10沿著一對導軌8在上下方向移動之滾珠螺桿30以及脈衝馬達32所構成。當驅動脈衝馬達32，則滾珠螺桿30旋轉，使移動機台16在上下方向移動。The grinding device 2 includes a grinding feed unit 34 composed of a ball screw 30 and a pulse motor 32 that move the grinding unit 10 in a vertical direction along a pair of guide rails 8. When the pulse motor 32 is driven, the ball screw 30 rotates to move the moving table 16 in the vertical direction.

在基底4的上表面形成凹部4a，在該凹部4a配設有卡盤台機構36。卡盤台機構36具有卡盤台38，在晶圓裝卸位置A及與研削單元10面對面的研削位置B之間，藉由未圖示的移動機構在Y軸移動。40、42為蛇腹。在基底4的前方側配設有給研削裝置2的操作員輸入研削條件等的操作面板44。A recess 4a is formed on the upper surface of the base 4, and a chuck table mechanism 36 is arranged in the recess 4a. The chuck table mechanism 36 has a chuck table 38, and moves between the wafer loading and unloading position A and the grinding position B facing the grinding unit 10 by a moving mechanism (not shown) on the Y axis. 40 and 42 are snake belly. An operation panel 44 for inputting grinding conditions and the like to the operator of the grinding device 2 is arranged on the front side of the base 4.

參閱圖2，其表示使用未在表面形成LSI等的元件的擬真矽晶圓11作為工件，以藉由本發明的方法實施研削磨石28的磨銳方法的樣子之局部剖面側視圖。Referring to FIG. 2, it shows a partial cross-sectional side view of a state in which a sharpening method of grinding grindstone 28 is implemented by the method of the present invention using a pseudo-silicon wafer 11 on which no device such as an LSI or the like is formed as a workpiece.

卡盤台38以保持面將擬真矽晶圓11保持，且在輪安裝件22可裝卸地裝設的研削輪24係由環狀的輪基台26，以及在輪基台26的下端環狀固定的多個研削磨石28所構成。研削磨石28係將金剛石磨粒以樹脂結合劑或陶瓷結合劑、金屬結合劑等固定而形成。The chuck table 38 holds the quasi-silicon wafer 11 with a holding surface, and the grinding wheel 24 detachably mounted on the wheel mount 22 is composed of a ring-shaped wheel base 26 and a ring on the lower end of the wheel base 26 A plurality of grinding stones 28 fixed in a shape. The grinding stone 28 is formed by fixing diamond abrasive particles with a resin bond, a ceramic bond, a metal bond, or the like.

主軸18繞著相對於卡盤台38的保持面垂直的旋轉軸旋轉。研削進給單元34將研削單元10在主軸18的旋轉軸方向研削進給。The main shaft 18 rotates about a rotation axis perpendicular to the holding surface of the chuck table 38. The grinding feed unit 34 grinds and feeds the grinding unit 10 in the direction of the rotation axis of the spindle 18.

本發明的研削磨石磨銳方法，係不使保持擬真矽晶圓11的卡盤台38旋轉，一邊將主軸18往箭頭b方向例如以6000rmp旋轉，一邊藉由研削進給單元34將研削單元10往箭頭Z方向研削進給，研削在卡盤台38保持的擬真矽晶圓11。亦即，本發明的研削磨石磨銳方法的重大特徵在於使卡盤台38不旋轉而實施研削磨石28的磨銳作業。The grinding method of the grinding stone of the present invention does not rotate the chuck table 38 holding the realistic silicon wafer 11, and the grinding feed unit 34 grinds the grinding while rotating the spindle 18 in the direction of arrow b at 6000 rmp, for example. The unit 10 grinds and feeds in the direction of arrow Z, and grinds the quasi-silicon wafer 11 held on the chuck table 38. That is, the significant feature of the grinding stone sharpening method of the present invention is that the grinding work of the grinding stone 28 is performed without rotating the chuck table 38.

圖3係表示本發明的研削磨石磨銳方法之示意俯視圖。在本發明的研削磨石磨銳方法中，使卡盤台38不旋轉，僅使研削輪24往箭頭b方向旋轉，因為研削擬真矽晶圓11並進行研削磨石28的磨銳，在擬真矽晶圓11形成有圓弧狀的研削槽13。Fig. 3 is a schematic plan view showing the grinding method of the grinding stone of the present invention. In the grinding stone grinding method of the present invention, the chuck table 38 is not rotated, and only the grinding wheel 24 is rotated in the direction of arrow b, because grinding of the real silicon wafer 11 and grinding of the grinding stone 28 are performed in The pseudo-silicon wafer 11 is formed with an arc-shaped grinding groove 13.

因為這樣使擬真矽晶圓11不旋轉地研削並進行研削磨石28磨銳，對研削磨石28產生較高負荷，即使擬真矽晶圓11的研削體積減少仍能得到高磨銳效果。因此，可減少在研削磨石28的磨銳作業使用的擬真矽晶圓11的片數。Because the silicon wafer 11 is ground without rotating and the grinding stone 28 is sharpened, a higher load is placed on the grinding stone 28. Even if the grinding volume of the silicon wafer 11 is reduced, a high sharpening effect can still be obtained . Therefore, the number of realistic silicon wafers 11 used in the sharpening operation of the grinding stone 28 can be reduced.

圖4（A）係藉由實施研削磨石28的磨銳作業而形成1條圓弧狀的研削槽13後的擬真矽晶圓11之俯視圖。如此般，因為在研削磨石28的一次磨銳作業中僅形成1條圓弧狀的研削槽13，故能夠使保持擬真矽晶圓11的卡盤台38在圓周方向僅稍微旋轉，而多次實施研削磨石28的磨銳作業。FIG. 4(A) is a plan view of the quasi-silicon wafer 11 after forming an arc-shaped grinding groove 13 by performing the sharpening operation of the grinding stone 28. In this way, since only one arc-shaped grinding groove 13 is formed in one grinding operation of the grinding stone 28, it is possible to rotate the chuck table 38 holding the virtual silicon wafer 11 only slightly in the circumferential direction, and The sharpening operation of the grinding stone 28 is carried out many times.

亦即，配合研削磨石28的磨銳狀況在1片擬真矽晶圓11上，如圖4（B）所示可形成有多條圓弧狀的研削槽13，故不會增加擬真矽晶圓11的使用量而可調整磨銳研削量。圖4（B）係在1片擬真矽晶圓11上形成多條圓弧狀的研削槽13後的擬真矽晶圓11之俯視圖。In other words, according to the sharpening condition of the grinding stone 28 on one simulated silicon wafer 11, as shown in FIG. 4(B), a plurality of circular arc-shaped grinding grooves 13 can be formed, so there is no increase in the simulation The amount of silicon wafer 11 can be adjusted to adjust the grinding amount. FIG. 4(B) is a plan view of the pseudo-silicon wafer 11 after forming a plurality of arc-shaped grinding grooves 13 on one pseudo-silicon wafer 11.

在本發明的研削磨石磨銳方法使用的擬真矽晶圓11係形成有1條乃至多條的圓弧形的研削槽13，而表面成為凹凸。因此，因研削磨石28對表面的凹凸以高速碰撞並實施研削，相較於研削平坦的擬真矽晶圓11研削負荷較高，故亦可用來作為一邊同時讓卡盤台38及研削輪24共同旋轉而一邊實施研削磨石28磨銳之既有的磨銳方法的磨銳用晶圓。In the quasi-silicon wafer 11 used in the grinding stone sharpening method of the present invention, one or more circular arc-shaped grinding grooves 13 are formed, and the surface becomes uneven. Therefore, since the grinding stone 28 collides with the irregularities on the surface at a high speed and grinds it, the grinding load is higher than that of the flat silicon wafer 11, so it can also be used as a side to simultaneously make the chuck table 38 and grinding wheel 24 is a wafer for sharpening which rotates together and performs the conventional sharpening method of grinding the grinding stone 28 while sharpening.

參閱圖5，其係表示使用形成有多條的圓弧狀的研削槽13之擬真矽晶圓11並實施既有方法的磨銳作業的樣子之局部剖面側視圖。Referring to FIG. 5, it is a partial cross-sectional side view showing a state of performing a sharpening operation using a conventional silicon wafer 11 formed with a plurality of circular arc-shaped grinding grooves 13 and performing an existing method.

在該既有磨銳方法中，將形成有多條的圓弧狀的研削槽13之擬真矽晶圓11吸引保持的卡盤台38往箭頭a方向例如以300rpm旋轉，且一邊將研削輪24往箭頭b方向例如以6000rpm旋轉，一邊藉由研削進給單元34將研削輪24往箭頭Z方向研削進給，實施擬真矽晶圓11的研削。In this existing sharpening method, the simulating silicon wafer 11 formed with a plurality of arc-shaped grinding grooves 13 is sucked and held by the chuck table 38 in the direction of arrow a, for example, at 300 rpm, while grinding wheels 24 rotates at, for example, 6000 rpm in the direction of arrow b, while grinding feed unit 34 grinds and feeds the grinding wheel 24 in the direction of arrow Z to carry out grinding of the virtual silicon wafer 11.

因為在擬真矽晶圓11形成有多條的圓弧狀的研削槽13，相較於平坦的晶圓研削負荷較高，故可有效率地實施研削磨石28磨銳作業。另外，利用因為研削負荷高而磨石的消耗亦多的性質，不僅可進行磨銳，即使研削一般包含磨粒的修整板而實施修整，仍可將形成有多條的圓弧狀的研削槽13之擬真矽晶圓11代替修整板進行利用。Since a plurality of arc-shaped grinding grooves 13 are formed on the quasi-silicon wafer 11, the grinding load is higher than that of a flat wafer, so the grinding operation of the grinding stone 28 can be efficiently performed. In addition, due to the high grinding load and the large consumption of grindstone, not only can the sharpening be carried out, but even if grinding is performed on a dressing plate that generally contains abrasive grains, multiple arc-shaped grinding grooves can be formed 13 of the simulated silicon wafer 11 is used instead of the trimming board.

再者，在上述的實施方式，因為使用了矽晶圓作為在研削裝置2研削的工件，雖在研削磨石28的磨銳作業採用了擬真矽晶圓11，但在作為研削對象的工件由其他材質而成的情況，較佳為使用將與研削對象的工件同一材質的工件作為磨銳用晶圓。In addition, in the above-mentioned embodiment, since the silicon wafer is used as the workpiece to be ground in the grinding device 2, although the silicon wafer 11 is used for the sharpening operation of the grinding stone 28, the workpiece to be ground is When it is made of other materials, it is preferable to use a workpiece of the same material as the workpiece to be ground as the wafer for sharpening.

10‧‧‧研削單元 11‧‧‧擬真矽晶圓 13‧‧‧圓弧狀的研削槽 18‧‧‧主軸 22‧‧‧輪架 24‧‧‧研削輪 26‧‧‧輪基台 28‧‧‧研削磨石 34‧‧‧研削進給單元 38‧‧‧卡盤台10‧‧‧ Grinding unit 11‧‧‧Simulated silicon wafer 13‧‧‧Circular grinding groove 18‧‧‧spindle 22‧‧‧round frame 24‧‧‧ Grinding wheel 26‧‧‧ Wheel Abutment 28‧‧‧ grinding stone 34‧‧‧ Grinding feed unit 38‧‧‧Chuck table

圖1係研削裝置之立體圖。 圖2係表示本發明研削方法之局部剖面側視圖。 圖3係表示本發明的磨銳方法之示意俯視圖。 圖4（A）係藉由本發明的磨銳方法形成1條圓弧狀的研削槽後的擬真矽晶圓之俯視圖，圖4（B）係形成多條圓弧狀的研削槽後的擬真矽晶圓之俯視圖。 圖5係表示使用具有多條圓弧狀的研削槽之擬真矽晶圓並使卡盤台及研削輪共同旋轉而實施一般磨銳作業的樣子之局部剖面側視圖。Figure 1 is a perspective view of a grinding device. 2 is a partial cross-sectional side view showing the grinding method of the present invention. 3 is a schematic plan view showing the sharpening method of the present invention. 4(A) is a plan view of a simulated silicon wafer after forming one circular arc-shaped grinding groove by the sharpening method of the present invention, and FIG. 4(B) is a plan view after forming a plurality of circular arc-shaped grinding grooves. Top view of a real silicon wafer. FIG. 5 is a partial cross-sectional side view showing a general sharpening operation using a simulated silicon wafer having a plurality of arc-shaped grinding grooves and rotating a chuck table and a grinding wheel together.

11‧‧‧擬真矽晶圓 11‧‧‧Simulated silicon wafer

13‧‧‧圓弧狀的研削槽 13‧‧‧Circular grinding groove

22‧‧‧輪架 22‧‧‧round frame

24‧‧‧研削輪 24‧‧‧ Grinding wheel

26‧‧‧輪基台 26‧‧‧ Wheel Abutment

28‧‧‧研削磨石 28‧‧‧ grinding stone

Claims (3)

一種研削磨石磨銳方法，係使用研削裝置進行，該研削裝置具備：卡盤台，以保持面將工件保持；研削單元，將環狀配置有多個研削磨石之研削輪裝設於具有與該保持面垂直的旋轉軸之主軸，研削保持於該卡盤台的工件；研削進給單元，將該研削單元在該旋轉軸方向研削進給；該研削磨石磨銳方法之特徵在於： 一邊使該主軸旋轉一邊研削進給該研削單元，使該卡盤台不旋轉而研削保持於該卡盤台的工件，並在該工件的表面形成圓弧狀的研削槽。A grinding method for grinding stone is carried out by using a grinding device, the grinding device is provided with: a chuck table to hold the workpiece with a holding surface; a grinding unit, a grinding wheel with a plurality of grinding stones arranged in a ring is installed on the grinding wheel The spindle of the rotation axis perpendicular to the holding surface grinds the workpiece held on the chuck table; the grinding feed unit grinds and feeds the grinding unit in the direction of the rotation axis; the characteristics of the grinding stone sharpening method are: Grinding feeds the grinding unit while rotating the spindle, grinding the workpiece held on the chuck table without rotating the chuck table, and forming an arc-shaped grinding groove on the surface of the workpiece. 如申請專利範圍第1項所述之研削磨石磨銳方法，其中，在該工件形成多條該圓弧狀的研削槽，控制該研削磨石的磨銳狀態。The grinding stone sharpening method as described in item 1 of the scope of the patent application, wherein a plurality of arc-shaped grinding grooves are formed on the workpiece to control the sharpening state of the grinding stone. 一種磨銳用晶圓，用來藉由研削讓研削磨石磨銳，其中， 藉由申請專利範圍第1或2項所述之方法形成圓弧狀的研削槽。A sharpening wafer used to sharpen grinding stones by grinding, where, The arc-shaped grinding groove is formed by the method described in item 1 or 2 of the patent application.
TW108121290A 2018-06-22 2019-06-19 Grinding stone sharpening method and sharpening wafer TWI799605B (en)

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