TWI732012B - Processing device - Google Patents

Processing device Download PDF

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Publication number
TWI732012B
TWI732012B TW106126018A TW106126018A TWI732012B TW I732012 B TWI732012 B TW I732012B TW 106126018 A TW106126018 A TW 106126018A TW 106126018 A TW106126018 A TW 106126018A TW I732012 B TWI732012 B TW I732012B
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Taiwan
Prior art keywords
defect
assembly
wafer
grinding
holding table
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TW106126018A
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Chinese (zh)
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TW201824392A (en
Inventor
溝本康隆
飯島悠
早川晉
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日商迪思科股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0069—Other grinding machines or devices with means for feeding the work-pieces to the grinding tool, e.g. turntables, transfer means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

設成毋須花費較多時間就能在晶圓的被加工面形成所期望的去疵層。 It is assumed that the desired defect removal layer can be formed on the processed surface of the wafer without spending much time.

一種加工裝置，其具備對磨削後之晶圓的被加工面進行研磨的研磨組件、及在晶圓的被加工面形成去疵層之去疵層形成組件，且去疵層形成組件具備有將去疵層形成於晶圓的被加工面之去疵輪、使去疵輪旋轉之旋轉組件、相對於保持台的保持面使去疵輪與旋轉組件一起朝垂直方向升降之升降組件、及相對於保持台的保持面使去疵輪與旋轉組件一起在水平方向上移動之水平移動組件，因此藉由成為有別於研磨組件之機構的去疵層形成組件，可以在短時間內於晶圓的被加工面形成去疵層。 A processing device is provided with a polishing assembly that grinds the processed surface of a wafer after grinding, and a defect-removing layer forming assembly that forms a defect-removing layer on the processed surface of the wafer, and the defect-removing layer forming assembly is provided with The defect removal wheel that forms the defect removal layer on the processed surface of the wafer, the rotating assembly that rotates the defect removal wheel, the lifting assembly that lifts the defect removal wheel and the rotating assembly in the vertical direction relative to the holding surface of the holding table, and Relative to the holding surface of the holding table, it is a horizontally moving assembly that moves the defect removal wheel and the rotating assembly in the horizontal direction. Therefore, the defect-removing layer forming assembly, which is a mechanism different from the polishing assembly, can be used in a short period of time. The round processed surface forms a defect-removing layer.

Description

加工裝置 Processing device 發明領域 Field of invention

本發明是有關於一種加工晶圓並且於晶圓的被加工面形成所期望的去疵(gettering)層的加工裝置。 The present invention relates to a processing device for processing a wafer and forming a desired gettering layer on the processed surface of the wafer.

發明背景 Background of the invention

當以磨削磨石磨削並薄化晶圓時，由於會在晶圓的被加工面產生加工應變等而使晶片的抗折強度降低，因此會於磨削晶圓後，藉由不使用研磨漿料而以乾式方式進行研磨的乾式拋光及被稱為CMP(化學機械研磨，Chemical Mechanical Polishing)之化學機械式的研磨法，來研磨晶圓的被加工面，以去除加工應變。 When the wafer is ground and thinned with a grinding stone, the flexural strength of the wafer is reduced due to processing strain on the processed surface of the wafer. Therefore, after the wafer is ground, the flexural strength of the wafer is reduced. Dry polishing in which the slurry is polished in a dry manner and a chemical mechanical polishing method called CMP (Chemical Mechanical Polishing) are used to polish the processed surface of the wafer to remove processing strain.

在此，在已去除加工應變的晶圓上會產生有下述問題：捕獲成為元件的金屬污染之原因的金屬雜質的去疵效果消失。於是，作為將使其產生去疵效果之去疵層形成於晶圓的加工裝置，已有例如下述之專利文獻1所示的裝置。在此加工裝置中，是將晶圓磨削後，藉由研磨組件施行以CMP進行的研磨，之後將研磨漿料切換成純水，且一邊將純水供給到晶圓的背面與研磨墊的研磨面之間一邊在晶圓的背面形成去疵層。 Here, the following problem occurs on the wafer from which the processing strain has been removed: the defect removal effect of trapping metal impurities that causes the metal contamination of the device disappears. Then, as a processing apparatus for forming a defect removal layer to produce a defect removal effect on a wafer, there is, for example, an apparatus shown in Patent Document 1 described below. In this processing device, after the wafer is ground, the polishing assembly is used to perform CMP polishing, then the polishing slurry is switched to pure water, and the pure water is supplied to the back of the wafer and the polishing pad. A defect removal layer is formed on the back side of the wafer between the polished surfaces.

先前技術文獻 Prior art literature 專利文獻 Patent literature

專利文獻1：日本專利特許第5916513號公報 Patent Document 1: Japanese Patent No. 5916513

發明概要 Summary of the invention

不過，在上述的加工裝置中，為了切換研磨漿料與純水，以在晶圓的背面形成去疵層，必須形成研磨漿料完全沒有附著在研磨墊的狀態。換言之，在研磨墊附著有研磨漿料的狀態下，無法於晶圓的背面形成所期望的去疵層，而有洗淨研磨墊等之必要。因此，會有下述問題：儘管晶圓的磨削、研磨已經結束，卻需要花費較多的時間來形成去疵層。 However, in the above-mentioned processing apparatus, in order to switch the polishing slurry and pure water to form a defect removal layer on the back surface of the wafer, it is necessary to form a state in which the polishing slurry does not adhere to the polishing pad at all. In other words, in a state where the polishing slurry is attached to the polishing pad, the desired defect removal layer cannot be formed on the back surface of the wafer, and it is necessary to clean the polishing pad and the like. Therefore, there will be the following problem: Although the grinding and polishing of the wafer have been completed, it takes more time to form the defect removal layer.

本發明是有鑑於上述事實而作成之發明，其目的在於毋須花費較多時間就能在晶圓的被加工面形成所期望的去疵層。 The present invention is an invention made in view of the above-mentioned facts, and its purpose is to form a desired defect-removing layer on the processed surface of a wafer without spending much time.

本發明是一種在晶圓的被加工面施行磨削與研磨後，於該被加工面形成去疵層的加工裝置，其具備：轉台，以中心為軸而可自轉地配設，且將晶圓對位到搬入、搬出晶圓的搬入搬出區域、磨削晶圓的磨削區域及研磨晶圓的研磨區域；保持台，以該轉台的中心為中心而以等角度方式配設，且具有保持晶圓的保持面；搬送組件，將晶圓相對於已定位在該搬入搬出區域的 該保持台搬入及搬出；磨削組件，將已定位在該磨削區域之該保持台所保持的晶圓磨削以形成預定的厚度；研磨組件，對已定位在該研磨區域之該保持台所保持的晶圓的被加工面進行研磨；及去疵層形成組件，在已定位在該搬入搬出區域之該保持台所保持的晶圓的被加工面形成去疵層，該去疵層形成組件具備：旋轉組件，具有以裝設有圓板狀的去疵墊之安裝座的中心為軸而旋轉的主軸；及升降組件，使該旋轉組件相對於該保持台的該保持面朝垂直方向升降。 The present invention is a processing device for forming a defect-removing layer on the processed surface of a wafer after grinding and polishing the processed surface. The circle is aligned to the loading and unloading area for loading and unloading wafers, the grinding area for grinding wafers, and the grinding area for grinding wafers; the holding table is arranged in an equiangular manner with the center of the turntable as the center, and has Hold the holding surface of the wafer; the transport assembly, the wafer is positioned relative to the loading and unloading area The holding table is moved in and out; the grinding assembly is used to grind the wafer held by the holding table that has been positioned in the grinding area to form a predetermined thickness; the grinding assembly is held by the holding table that has been positioned in the grinding area Grind the processed surface of the wafer; and a defect-removing layer forming assembly, forming a defect-removing layer on the processed surface of the wafer held by the holding table that has been positioned in the carry-in and unloading area, and the defect-removing layer forming assembly includes: The rotating assembly has a main shaft that rotates around the center of the mounting seat on which the disc-shaped defect-removing pad is installed as an axis; and an elevating assembly that lifts the rotating assembly in a vertical direction relative to the holding surface of the holding table.

又，也可以是具備使上述旋轉組件相對於上述保持台的保持面在水平方向上移動之水平移動組件的構成。 In addition, it may be configured to include a horizontal movement unit that moves the rotation unit in a horizontal direction with respect to the holding surface of the holding table.

本發明之加工裝置由於具備以中心為軸而可自轉地配設且將晶圓對位到搬入搬出區域、磨削區域、研磨區域之轉台、以轉台的中心為中心而以等角度方式配設且具有保持晶圓的保持面之保持台、將晶圓相對於已定位在搬入搬出區域的保持台搬入及搬出的搬送組件、將已定位在磨削區域之保持台所保持的晶圓磨削以形成預定的厚度的磨削組件、對已定位在研磨區域之保持台所保持的晶圓的被加工面進行研磨的研磨組件、及在已定位在搬入 搬出區域之保持台所保持的晶圓的被加工面形成去疵層的去疵層形成組件，且去疵層形成組件具備旋轉組件及升降組件，該旋轉組件具有以裝設有圓板狀的去疵墊之安裝座的中心為軸而旋轉的主軸，該升降組件使旋轉組件相對於保持台的保持面朝垂直方向升降，因此在對晶圓施行磨削、研磨後，旋轉轉台來將保持台定位到搬入搬出區域，藉此，即可以藉由成為有別於研磨組件之機構的去疵層形成組件，而在毋須花費較多時間的情形下於晶圓的被加工面形成去疵層。 The processing device of the present invention is equipped with a turntable that is arranged to be rotatable with the center as the axis and aligns the wafers to the loading and unloading area, the grinding area, and the polishing area, and is arranged in an equiangular manner with the center of the turntable as the center. And there is a holding table with a holding surface to hold the wafer, a transfer unit that moves the wafer in and out of the holding table positioned in the carry-in and unload area, and the wafer held by the holding table positioned in the grinding area is ground to A grinding assembly that forms a predetermined thickness, a grinding assembly that grinds the processed surface of a wafer held by a holding table that has been positioned in the polishing area, and a grinding assembly that is positioned in the loading area The processing surface of the wafer held by the holding table in the carry-out area forms a defect-removing layer forming assembly that forms a defect-removing layer, and the defect-removing layer forming assembly includes a rotating assembly and a lifting assembly. The rotating assembly has a disk-shaped removing The center of the mounting seat of the defective pad is the main shaft that rotates. This lifting assembly lifts the rotating assembly in the vertical direction with respect to the holding surface of the holding table. Therefore, after grinding and polishing the wafer, the turntable is rotated to hold the holding table Positioning in the carry-in and carry-out area, by means of which a defect-removing layer can be formed as a mechanism different from the polishing unit, and the defect-removing layer can be formed on the processed surface of the wafer without spending much time.

在具備使上述旋轉組件相對於上述保持台的上述保持面在水平方向移動之水平移動組件的情況下，能夠將去疵層形成組件定位在不會成為晶圓相對於已定位在上述搬入搬出區域的上述保持台的搬入及搬出之妨礙的位置上，且與上述同樣地，能夠在毋須花費較多時間的情形下於晶圓的被加工面形成去疵層。 In the case of a horizontal movement unit that moves the rotating unit in a horizontal direction with respect to the holding surface of the holding table, the defect-removing layer forming unit can be positioned so that the wafer will not be positioned in the carry-in/out area with respect to the wafer. In a position that hinders the loading and unloading of the holding table, and similarly to the above, it is possible to form a defect-removing layer on the processed surface of the wafer without spending a lot of time.

1:加工裝置 1: Processing device

2:轉台 2: turntable

3:保持台 3: hold the stage

3a:保持面 3a: Keep the face

4:隔板 4: partition

5a、5b:片匣 5a, 5b: cassette

6:搬入搬出組件 6: Moving in and out of components

7:X方向移動組件 7: Move the component in the X direction

8:暫置組件 8: Temporary components

9:洗淨組件 9: Wash the components

10:搬送組件 10: Transport components

11:吸附墊 11: Adsorption pad

12:支臂部 12: Support arm

13:支撐桿 13: Support rod

14:移動塊 14: Move the block

15:支撐柱 15: Support column

16、33、53、630、640、730、740:導軌 16, 33, 53, 630, 640, 730, 740: rail

20:粗磨削組件 20: Rough grinding components

21、41、610、710:主軸 21, 41, 610, 710: Spindle

22、42、612、712:主軸殼體 22, 42, 612, 712: spindle housing

23、32、43、52、611、650、660、711、750、761:馬達 23, 32, 43, 52, 611, 650, 660, 711, 750, 761: Motor

24:粗磨削輪 24: Rough grinding wheel

25、45:磨削磨石 25, 45: Grinding grindstone

30:粗磨削進給組件 30: Rough grinding feed assembly

31、51、760:滾珠螺桿 31, 51, 760: Ball screw

34、54:升降板 34, 54: Lifting board

340、540、613、631、713、731:引導溝 340, 540, 613, 631, 713, 731: guide groove

40:精磨削組件 40: Fine grinding components

44:精磨削輪 44: Fine grinding wheel

50:精磨削進給組件 50: Fine grinding feed assembly

60:研磨組件 60: Grinding components

61、71:旋轉組件 61, 71: Rotating components

62:研磨輪 62: Grinding wheel

620、720:安裝座 620, 720: Mounting seat

621、721:基台 621, 721: Abutment

622:研磨墊 622: polishing pad

63、73:可動塊 63, 73: movable block

64、74:固定塊 64, 74: fixed block

65:第1研磨進給組件 65: The first grinding feed assembly

66:第2研磨進給組件 66: The second grinding feed assembly

70:去疵層形成組件 70: Defect layer to form components

72:去疵輪 72: Defective wheel

722:去疵墊 722: Defect Pad

73a、74a:側面 73a, 74a: side

75:升降組件 75: Lifting components

76:水平移動組件 76: Move the component horizontally

80:修整器單元 80: Dresser unit

81:拖架 81: Trailer

82:修整構件 82: Trimming components

90:純水供給組件 90: Pure water supply unit

100:裝置基座 100: Device base

101:直立壁 101: Upright Wall

102a、102b:載台 102a, 102b: carrier

A、B:箭頭 A, B: Arrow

P1:搬入搬出區域 P1: Moving in and out of the area

P2:粗磨削區域 P2: Rough grinding area

P3:精磨削區域 P3: Fine grinding area

P4:研磨區域 P4: Grinding area

W:晶圓 W: Wafer

Wa:正面 Wa: front

Wb:背面 Wb: back

X、Y、Z、+X、+Y、+Z、-X、-Y、-Z:方向 X, Y, Z, +X, +Y, +Z, -X, -Y, -Z: direction

圖1是顯示加工裝置的構成之立體圖。 Fig. 1 is a perspective view showing the configuration of the processing device.

圖2是顯示研磨組件的構成之立體圖。 Fig. 2 is a perspective view showing the structure of the polishing assembly.

圖3是顯示去疵層形成組件的構成之立體圖。 Fig. 3 is a perspective view showing the structure of a defect-removing layer forming assembly.

圖4是顯示藉由去疵層形成組件於晶圓的被加工面形成去疵層之狀態的截面圖。 4 is a cross-sectional view showing a state in which a defect removal layer is formed on the processed surface of the wafer by the defect removal layer forming assembly.

用以實施發明之形態 The form used to implement the invention

圖1所示的加工裝置1是對作為被加工物之晶圓施行 磨削、研磨的加工裝置之一例。加工裝置1具有在Y軸方向上延伸的裝置基座100、及在裝置基座100的Y軸方向後部豎立設置的直立壁101。本實施形態所示的加工裝置1具備有用於搬入、搬出晶圓之搬入搬出區域P1、用於對加工前的晶圓進行粗磨削之粗磨削區域P2、用於對粗磨削後的晶圓進行精磨削之精磨削區域P3、及用於研磨精磨削後的晶圓之研磨區域P4。 The processing device 1 shown in Figure 1 performs An example of grinding and polishing processing equipment. The processing device 1 has a device base 100 extending in the Y-axis direction, and an upright wall 101 erected at the rear of the device base 100 in the Y-axis direction. The processing apparatus 1 shown in this embodiment is provided with a carry-in and carry-out area P1 for carrying in and out of wafers, a rough grinding area P2 for rough grinding of wafers before processing, and a rough grinding area P2 for rough grinding of wafers. The fine grinding area P3 where the wafer is subjected to fine grinding, and the polishing area P4 for grinding the finely ground wafer.

裝置基座100的上表面中央配設有以中心為軸而可自轉的轉台2，轉台2之上配設有保持晶圓的保持台3。保持台3是以轉台2的中心為中心來設置等角度的間隔，且至少配設有4個。轉台2的上表面配設有用於區隔開配設有各保持台3的區域之隔板4。隔板4的高度是形成為比保持台3的高度更高。並且，藉由旋轉轉台2，可以使保持台3公轉，且將保持台3依序定位到搬入搬出區域P1、粗磨削區域P2、精磨削區域P3、及研磨區域P4。 On the center of the upper surface of the device base 100, a turntable 2 capable of rotating around the center is arranged, and on the turntable 2, a holding table 3 for holding wafers is arranged. The holding table 3 is arranged at equal angular intervals with the center of the turntable 2 as the center, and at least four are arranged. The upper surface of the turntable 2 is provided with a partition 4 for partitioning the area where each holding table 3 is arranged. The height of the partition 4 is formed to be higher than the height of the holding table 3. In addition, by rotating the turntable 2, the holding table 3 can be revolved, and the holding table 3 can be sequentially positioned in the carry-in/out area P1, the rough grinding area P2, the finishing grinding area P3, and the polishing area P4.

裝置基座100的Y軸方向前部有載台102a、102b相鄰而配設。於載台102a上配設有收容磨削前的晶圓之片匣5a、於載台102b上配設有收容磨削後的晶圓之片匣5b。片匣5a及片匣5b的附近配設有搬入搬出組件6，該搬入搬出組件6會進行離開片匣5a的加工前的晶圓的搬出並且進行到片匣5b的加工後的晶圓的搬入。於搬入搬出組件6上連接有X軸方向移動組件7。並且，藉由X軸方向移動組件7使搬入搬出組件6在X軸方向上水平移動，而能夠將搬入搬出組件6定位到與片匣5a或片匣5b相面對的位置。 On the front part of the device base 100 in the Y-axis direction, stages 102a and 102b are arranged adjacent to each other. A cassette 5a for storing wafers before grinding is arranged on the stage 102a, and a cassette 5b for storing wafers after grinding is arranged on the stage 102b. Near the cassette 5a and the cassette 5b, a loading and unloading assembly 6 is arranged. The loading and unloading assembly 6 carries out the unloading of the wafers before processing from the cassette 5a and the loading of the processed wafers to the cassette 5b. . The X-axis direction moving unit 7 is connected to the carry-in/out unit 6. Furthermore, by horizontally moving the carry-in/out module 6 in the X-axis direction by the X-axis direction moving module 7, the carry-in/out module 6 can be positioned to face the cassette 5a or the cassette 5b.

搬入搬出區域P1的附近配設有暫置加工前的晶圓且進行中心對位之暫置組件8。相鄰於暫置組件8的位置上配設有洗淨加工後的晶圓之洗淨組件9。 In the vicinity of the carry-in and carry-out area P1, a temporary assembly 8 for temporarily placing wafers before processing and performing centering is arranged. A cleaning module 9 for cleaning processed wafers is arranged adjacent to the temporary module 8.

加工裝置1具備有：搬送組件10，相對於已定位在該搬入搬出區域P1的該保持台3來將晶圓搬入及搬出；粗磨削組件20，將已定位在粗磨削區域P2之保持台3所保持的晶圓粗磨削至預定的厚度；粗磨削進給組件30，相對於保持台3將粗磨削組件20朝垂直方向(Z軸方向)磨削進給；精磨削組件40，將已定位在精磨削區域P3之保持台3所保持的晶圓精磨削至預定的成品厚度；精磨削進給組件50，相對於保持台3將精磨削組件40朝Z軸方向磨削進給；研磨組件60，對已定位在研磨區域P4之保持台3所保持的晶圓的被加工面進行研磨；及去疵層形成組件70，在已定位在搬入搬出區域P1之保持台所保持的晶圓的被加工面形成去疵層。 The processing device 1 is provided with: a transfer assembly 10 for carrying wafers in and out of the holding table 3 positioned in the carrying-in and carrying-out area P1; a rough grinding assembly 20 for holding the wafers positioned in the rough grinding area P2 The wafer held by the table 3 is roughly ground to a predetermined thickness; the rough grinding feed assembly 30 grinds and feeds the rough grinding assembly 20 in the vertical direction (Z-axis direction) relative to the holding table 3; fine grinding The assembly 40 is used for finishing grinding the wafer held by the holding table 3 positioned in the finishing grinding area P3 to a predetermined finished product thickness; the finishing feeding assembly 50, which faces the finishing assembly 40 relative to the holding table 3 Grinding feed in the Z-axis direction; the polishing assembly 60, which grinds the processed surface of the wafer held by the holding table 3 positioned in the polishing area P4; and the defect-removing layer forming assembly 70, which is positioned in the carry-in and carry-out area The processed surface of the wafer held by the holding table of P1 forms a defect removal layer.

搬送組件10具備有吸附晶圓之圓板狀的吸附墊11、支撐吸附墊11的支臂部12、支撐支臂部12的支撐桿13、安裝於裝置基座100的一對支撐柱15、固定於一對支撐柱15的上端之在Y軸方向上延伸的導軌16、與連結於支撐桿13的上端且沿著導軌16在Y軸方向往復移動之移動塊14。支撐桿13是藉由圖未示的升降機構形成為可在Z軸方向上升降。這樣構成的搬送組件10能將暫置於暫置組件8之加工前的晶圓搬送到已定位於搬入搬出區域P1的保持台3，並且從已定位於搬入搬出區域P1的保持台3將加工後 的晶圓搬出且搬送到洗淨組件9。 The transport assembly 10 includes a disc-shaped suction pad 11 for sucking wafers, an arm portion 12 that supports the suction pad 11, a support rod 13 that supports the arm portion 12, and a pair of support columns 15 mounted on the device base 100. A guide rail 16 extending in the Y-axis direction fixed to the upper ends of the pair of support columns 15 and a moving block 14 connected to the upper end of the support rod 13 and reciprocating along the guide rail 16 in the Y-axis direction. The support rod 13 is formed by an unshown elevating mechanism so as to be capable of elevating in the Z-axis direction. The transport unit 10 configured in this way can transport the wafer temporarily placed in the temporary unit 8 before processing to the holding table 3 positioned in the carry-in/out area P1, and process the wafer from the holding table 3 positioned in the carry-in/out area P1 Rear The wafers are carried out and transported to the cleaning module 9.

粗磨削組件20是在直立壁101的側邊透過粗磨削進給組件30而配設，且被配置在粗磨削區域P2。粗磨削組件20具備有具有Z軸方向的軸心之主軸21、將主軸21以可旋轉的方式支撐的主軸殼體22、連接於主軸21的上端之馬達23、裝設在主軸21的下端之粗磨削輪24、及環狀地固接於粗磨削輪24的下部之粗磨削用的磨削磨石25。並且，藉由令馬達23使主軸21旋轉，能夠使粗磨削輪24以預定的旋轉速度旋轉。 The rough grinding unit 20 is arranged through the rough grinding feed unit 30 on the side of the upright wall 101, and is arranged in the rough grinding area P2. The rough grinding assembly 20 is provided with a spindle 21 having an axis in the Z-axis direction, a spindle housing 22 that rotatably supports the spindle 21, a motor 23 connected to the upper end of the spindle 21, and is installed at the lower end of the spindle 21 The rough grinding wheel 24 and the grinding grindstone 25 for rough grinding which is annularly fixed to the lower part of the rough grinding wheel 24. In addition, by rotating the main shaft 21 by the motor 23, the rough grinding wheel 24 can be rotated at a predetermined rotation speed.

粗磨削進給組件30具備有在Z軸方向上延伸的滾珠螺桿31、連接於滾珠螺桿31的一端之馬達32、與滾珠螺桿31平行地延伸的一對導軌33、及其中一面連結於粗磨削組件20的升降板34。將導軌33滑動接觸於形成於升降板34的另一面的一對的引導溝340，且將滾珠螺桿31螺合於形成於升降板34的中央部之螺帽。藉由以馬達32旋動滾珠螺桿31，能夠使粗磨削組件20與升降板34一起沿著一對導軌33在Z軸方向上升降。 The rough grinding feed assembly 30 is provided with a ball screw 31 extending in the Z-axis direction, a motor 32 connected to one end of the ball screw 31, a pair of guide rails 33 extending parallel to the ball screw 31, and one of the guide rails 33 connected to the rough surface. The lifting plate 34 of the grinding assembly 20. The guide rail 33 is slidably contacted with a pair of guide grooves 340 formed on the other surface of the lifting plate 34, and the ball screw 31 is screwed to a nut formed at the center of the lifting plate 34. By rotating the ball screw 31 with the motor 32, the rough grinding assembly 20 can be raised and lowered in the Z-axis direction along the pair of guide rails 33 together with the lifting plate 34.

精磨削組件40是在直立壁101的側邊透過精磨削進給組件50而配設，且被配置在精磨削區域P3。精磨削組件40具備有具有Z軸方向的軸心之主軸41、將主軸41以可旋轉方式支撐的主軸殼體42、連接於主軸41的上端之馬達43、裝設在主軸41的下端之精磨削輪44、及環狀地固接於精磨削輪44的下部之精磨削用的磨削磨石45。藉由令馬達43使主軸41旋轉，能夠使精磨削輪44以預定的旋轉速 度旋轉。 The finish grinding unit 40 is disposed on the side of the upright wall 101 through the finish grinding feed unit 50, and is arranged in the finish grinding area P3. The fine grinding assembly 40 is provided with a main shaft 41 having an axis in the Z-axis direction, a main shaft housing 42 that supports the main shaft 41 in a rotatable manner, a motor 43 connected to the upper end of the main shaft 41, and a motor 43 installed on the lower end of the main shaft 41. The fine grinding wheel 44 and the grinding grindstone 45 for fine grinding fixed to the lower part of the fine grinding wheel 44 annularly. By rotating the main shaft 41 by the motor 43, the fine grinding wheel 44 can be rotated at a predetermined rotation speed. Degree rotation.

精磨削進給組件50具備有在Z軸方向延伸的滾珠螺桿51、連接於滾珠螺桿51的一端之馬達52、與滾珠螺桿51平行地延伸的一對導軌53、及其中一面連結於精磨削組件40的升降板54。將導軌53滑動接觸於形成於升降板54的另一面的一對引導溝540，且將滾珠螺桿51螺合於形成於升降板54的中央部之螺帽。藉由以馬達52旋動滾珠螺桿51，能夠使精磨削組件40與升降板54一起沿著一對導軌53在Z軸方向上升降。 The fine grinding feed assembly 50 is provided with a ball screw 51 extending in the Z-axis direction, a motor 52 connected to one end of the ball screw 51, a pair of guide rails 53 extending parallel to the ball screw 51, and one surface thereof is connected to the fine grinding The lifting plate 54 of the cutting assembly 40. The guide rail 53 is slidably contacted with a pair of guide grooves 540 formed on the other surface of the lifting plate 54, and the ball screw 51 is screwed to a nut formed at the center of the lifting plate 54. By rotating the ball screw 51 with the motor 52, the fine grinding assembly 40 and the lifting plate 54 can be raised and lowered in the Z-axis direction along the pair of guide rails 53.

研磨組件60如二點鏈線所示，是配設於裝置基座100之上，且配置在研磨區域P4。如圖2所示，研磨組件60具備有研磨晶圓的被加工面之研磨輪62、使研磨輪62旋轉的旋轉組件61、將旋轉組件61以可在Z軸方向上升降的方式支撐的可動塊63、配設於可動塊63且使旋轉組件61在Z軸方向上升降之第1研磨進給組件65、將可動塊63以可在X軸方向上移動的方式支撐的固定塊64、及配設於固定塊64且使可動塊63在相對於保持台3的保持面3a平行的X軸方向上移動之第2研磨進給組件66。 As shown by the two-dot chain line, the polishing assembly 60 is disposed on the device base 100 and is disposed in the polishing area P4. As shown in FIG. 2, the polishing assembly 60 includes a polishing wheel 62 that polishes the processed surface of the wafer, a rotating assembly 61 that rotates the polishing wheel 62, and a movable support that supports the rotating assembly 61 to be liftable in the Z-axis direction. A block 63, a first grinding and feeding assembly 65 that is arranged on the movable block 63 and raises and lowers the rotating assembly 61 in the Z-axis direction, a fixed block 64 that supports the movable block 63 to be movable in the X-axis direction, and The second grinding and feeding unit 66 is arranged on the fixed block 64 and moves the movable block 63 in the X-axis direction parallel to the holding surface 3 a of the holding table 3.

旋轉組件61具備有具有Z軸方向的軸心之主軸610、連接於主軸610的上端之馬達611、及將主軸610以可旋轉的方式支撐的主軸殼體612。研磨輪62具備有透過安裝座620而可裝卸地裝設在主軸610之下端的基台621、及裝設於基台621的下部之圓板狀的研磨墊622。並且，旋轉組件61可以藉由驅動馬達611，而以安裝座620 的中心為軸來使研磨墊622以預定的旋轉速度旋轉。 The rotating assembly 61 includes a main shaft 610 having an axis in the Z-axis direction, a motor 611 connected to the upper end of the main shaft 610, and a main shaft housing 612 that supports the main shaft 610 in a rotatable manner. The grinding wheel 62 includes a base 621 detachably mounted on the lower end of the main shaft 610 through a mounting seat 620, and a disc-shaped grinding pad 622 mounted on the lower part of the base 621. In addition, the rotating assembly 61 can be driven by the motor 611, and the mounting seat 620 The center of φ is the axis to rotate the polishing pad 622 at a predetermined rotation speed.

研磨墊622是藉由例如使磨粒分散在發泡聚氨酯或不織布中且以適當的黏結材固定而成之研磨墊所構成。磨粒可以使用例如粒徑為0.2~1.5μm的GC(Green Carbide，綠色碳化物)磨粒。又，磨粒只要是硬度比晶圓更高且能在晶圓的被加工面造成微小的損傷之磨粒即可。作為磨粒除了GC磨粒以外，也可以是鑽石、氧化鋁、氧化鈰(ceria)、立方氮化硼(CBN))等之磨粒。在藉由研磨組件60進行由CMP進行的研磨加工的情況下，雖未圖示，但在研磨墊622與保持台3所保持之晶圓的被加工面之間，連接有供給研磨漿料的研磨漿料供給源。再者，雖然研磨漿料大多是使用鹼性的研磨液，但亦可因應於成為加工對象之晶圓的材質而設成使用酸性的研磨液。又，也可設成以研磨組件60進行乾式的研磨加工(乾式拋光(Dry Polishing))。 The polishing pad 622 is composed of, for example, a polishing pad in which abrasive grains are dispersed in foamed polyurethane or non-woven fabric and fixed with an appropriate bonding material. As the abrasive grains, for example, GC (Green Carbide) abrasive grains having a particle diameter of 0.2 to 1.5 μm can be used. In addition, the abrasive grains may be abrasive grains that have higher hardness than the wafer and can cause minute damage to the processed surface of the wafer. As the abrasive grains, in addition to GC abrasive grains, abrasive grains such as diamond, alumina, ceria (ceria), cubic boron nitride (CBN), etc. may also be used. In the case where the polishing process by CMP is performed by the polishing assembly 60, although not shown, between the polishing pad 622 and the processed surface of the wafer held by the holding table 3, a supply of polishing slurry is connected. Supply source of polishing slurry. Furthermore, although the polishing slurry mostly uses an alkaline polishing liquid, it may be set to use an acidic polishing liquid in accordance with the material of the wafer to be processed. In addition, the polishing assembly 60 may be used to perform dry polishing (Dry Polishing).

第1研磨進給組件65具備有在Z軸方向上延伸之圖未示的滾珠螺桿、及連接於滾珠螺桿的一端之馬達650。可動塊63的側面形成有在Z軸方向上延伸之一對導軌630，於此一對導軌630上滑動接觸有形成於主軸殼體612的一對引導溝613，且在主軸殼體612的中央之螺帽中螺合有滾珠螺桿。並且，能夠藉由以馬達650旋動滾珠螺桿，使研磨輪62與旋轉組件61一起沿著一對導軌630在Z軸方向上移動。 The first grinding and feeding unit 65 includes a ball screw (not shown) extending in the Z-axis direction, and a motor 650 connected to one end of the ball screw. A pair of guide rails 630 extending in the Z-axis direction are formed on the side surface of the movable block 63. A pair of guide grooves 613 formed in the spindle housing 612 are slidably contacted on the pair of guide rails 630, and are located in the center of the spindle housing 612. A ball screw is screwed in the nut. In addition, by rotating the ball screw with the motor 650, the grinding wheel 62 and the rotating assembly 61 can be moved in the Z-axis direction along the pair of guide rails 630 together.

第2研磨進給組件66具備有在X軸方向上延 伸之圖未示的滾珠螺桿、及連接於滾珠螺桿的一端之馬達660。固定塊64的側面形成有在X軸方向上延伸之一對導軌640，於此一對導軌640上滑動接觸有形成於可動塊63之一對引導溝631，且在可動塊63的中央之螺帽中螺合有滾珠螺桿。並且，能夠藉由以馬達660旋動滾珠螺桿，使可動塊63沿著一對導軌640在X軸方向上移動。 The second grinding feed assembly 66 is provided with an extension in the X-axis direction Extend a ball screw not shown in the drawing, and a motor 660 connected to one end of the ball screw. The side surface of the fixed block 64 is formed with a pair of guide rails 640 extending in the X-axis direction. A pair of guide grooves 631 formed on the movable block 63 are slidably contacted on the pair of guide rails 640, and a screw in the center of the movable block 63 is formed. A ball screw is screwed in the cap. In addition, by rotating the ball screw with the motor 660, the movable block 63 can be moved in the X-axis direction along the pair of guide rails 640.

圖1所示的去疵層形成組件70是配設於研磨組件60的附近，且配置在搬入搬出區域P1。如圖3所示，去疵層形成組件70具備有在晶圓的被加工面形成去疵層之去疵輪72、使去疵輪72旋轉的旋轉組件71、將旋轉組件71以可在Z軸方向上升降的方式支撐的可動塊73、相對於圖1所示之保持台3的保持面3a使旋轉組件71在垂直方向(Z軸方向)上升降的升降組件75、將可動塊73以可在Y軸方向上移動的方式支撐的固定塊74、及配設於固定塊74且相對於保持台3的保持面3a使可動塊73在水平方向(Y軸方向)上移動的水平移動組件76。 The defect-removing layer forming assembly 70 shown in FIG. 1 is arranged in the vicinity of the polishing assembly 60 and is arranged in the carry-in and carry-out area P1. As shown in FIG. 3, the defect-removing layer forming assembly 70 is provided with a defect-removing wheel 72 that forms a defect-removing layer on the processed surface of the wafer, a rotating assembly 71 that rotates the defect-removing wheel 72, and the rotating assembly 71 can be positioned at Z The movable block 73 supported in the manner of lifting in the axial direction, the lifting assembly 75 that lifts the rotating assembly 71 in the vertical direction (Z-axis direction) with respect to the holding surface 3a of the holding table 3 shown in FIG. 1, and the movable block 73 A fixed block 74 that is movably supported in the Y-axis direction, and a horizontal moving assembly that is arranged on the fixed block 74 and moves the movable block 73 in the horizontal direction (Y-axis direction) relative to the holding surface 3a of the holding table 3 76.

旋轉組件71具備有具有Z軸方向的軸心之主軸710、連接於主軸710的上端之馬達711、及將主軸710以可旋轉的方式支撐的主軸殼體712。去疵輪72具備有透過安裝座720而可裝卸地裝設在主軸710之下端的基台721、及裝設於基台721的下部之圓板狀的去疵墊722。並且，去疵層形成組件70能夠藉由驅動馬動711，而以安裝座720的中心為軸來使去疵墊722以預定的旋轉速度旋轉。 The rotating assembly 71 includes a main shaft 710 having an axis in the Z-axis direction, a motor 711 connected to the upper end of the main shaft 710, and a main shaft housing 712 that supports the main shaft 710 in a rotatable manner. The removing wheel 72 includes a base 721 detachably installed at the lower end of the main shaft 710 through a mounting seat 720, and a disc-shaped removing pad 722 installed at the lower part of the base 721. In addition, the defect-removing layer forming assembly 70 can rotate the defect-removing pad 722 at a predetermined rotation speed with the center of the mounting seat 720 as an axis by driving the horse 711.

去疵墊722的直徑是形成為例如圖1所示之 保持台3的保持面3a之半徑以上且直徑以下。去疵墊722與上述研磨墊622同樣地，是藉由使例如GC、鑽石、氧化鋁、氧化鈰、CBN等之磨粒分散在例如發泡聚氨酯或不織布中且以適當的黏結材固定而成之墊。關於磨粒，所使用的是將粒徑遠小於分散在研磨墊622的磨粒之粒徑的磨粒分散之磨粒。去疵層形成組件70是如圖4所示，連接有純水供給源90。純水供給源90是形成為從去疵墊722的中心將預定流量的純水供給到晶圓與去疵墊722相接觸的部分之構成。再者，根據所形成的去疵層之不同，分散於去疵墊722之磨粒的粒徑亦可為分散於研磨墊622之磨粒的粒徑以上。 The diameter of the defect removal pad 722 is formed such as shown in FIG. 1 The radius of the holding surface 3a of the holding table 3 is greater than or equal to and less than or equal to the diameter. Defect removal pad 722 is the same as above-mentioned polishing pad 622, which is made by dispersing abrasive particles such as GC, diamond, alumina, cerium oxide, CBN, etc. in, for example, foamed polyurethane or non-woven fabric, and fixing it with an appropriate bonding material. The pad. Regarding the abrasive grains, the abrasive grains in which the abrasive grains having a particle size far smaller than the particle size of the abrasive grains dispersed in the polishing pad 622 are dispersed are used. As shown in FIG. 4, the defect-removing layer forming assembly 70 is connected to a pure water supply source 90. The pure water supply source 90 is configured to supply pure water at a predetermined flow rate from the center of the de-defect pad 722 to the part where the wafer and the de-defect pad 722 are in contact. Furthermore, depending on the difference of the defect removal layer formed, the particle size of the abrasive grains dispersed in the defect removal pad 722 may be greater than the grain size of the abrasive grains dispersed in the polishing pad 622.

圖3所示的升降組件75具備有在Z軸方向上延伸之圖未示的滾珠螺桿、及連接於滾珠螺桿的一端之馬達750。於可動塊73的側面73a形成有在Z軸方向上延伸之一對導軌730，於此一對導軌730上滑動接觸有形成於主軸殼體712之一對引導溝713，且在主軸殼體712的中央之螺帽中螺合有滾珠螺桿。並且，能夠藉由以馬達750旋動滾珠螺桿，來使去疵輪72與旋轉組件71一起沿著一對導軌730在Z軸方向上升降。 The lift assembly 75 shown in FIG. 3 includes a ball screw (not shown) extending in the Z-axis direction, and a motor 750 connected to one end of the ball screw. A pair of guide rails 730 extending in the Z-axis direction is formed on the side surface 73a of the movable block 73, and a pair of guide grooves 713 formed in the spindle housing 712 are slidably contacted on the pair of guide rails 730, and the spindle housing 712 A ball screw is screwed in the central nut. In addition, by rotating the ball screw with the motor 750, the defect removal wheel 72 and the rotating assembly 71 can be raised and lowered in the Z-axis direction along the pair of guide rails 730.

水平移動組件76具備有在Y軸方向上延伸的滾珠螺桿760、及連接於滾珠螺桿760的一端之馬達761。於固定塊74的側面74a形成有在Y軸方向上延伸之一對導軌740，於此一對導軌740上滑動接觸有形成於可動塊73之一對引導溝731，且在可動塊73的中央之螺帽中螺合有 滾珠螺桿760。能夠藉由以馬達761旋動滾珠螺桿760，而使可動塊73沿著一對導軌740在Y軸方向上水平地移動，並且使去疵輪72與旋轉組件71一起在Y軸方向上水平地移動。本實施形態所示的固定塊74是形成為延伸到突出於圖1所示的轉台2之外側的位置為止之構成。因此，在實施晶圓相對於已定位在搬入搬出區域P1的保持台3之搬入及搬出時，可以藉由水平移動組件76，使可動塊73從搬入搬出區域P1移動到例如已退避到-Y方向側的退避位置，而防止去疵層形成組件70成為晶圓相對於已定位在搬入搬出區域P1的保持台3之搬入及搬出的妨礙之情形。 The horizontal movement assembly 76 includes a ball screw 760 extending in the Y-axis direction and a motor 761 connected to one end of the ball screw 760. A pair of guide rails 740 extending in the Y-axis direction is formed on the side surface 74a of the fixed block 74, and a pair of guide grooves 731 formed in the movable block 73 are slidably contacted on the pair of guide rails 740, and are located at the center of the movable block 73 The screw cap has Ball screw 760. By rotating the ball screw 760 with the motor 761, the movable block 73 can be moved horizontally in the Y-axis direction along a pair of guide rails 740, and the defect removal wheel 72 and the rotating assembly 71 can be horizontally moved in the Y-axis direction. mobile. The fixing block 74 shown in this embodiment is formed to extend to a position protruding from the outer side of the turntable 2 shown in FIG. 1. Therefore, when carrying out the loading and unloading of the wafer with respect to the holding table 3 positioned in the loading/unloading area P1, the movable block 73 can be moved from the loading/unloading area P1 to, for example, retracted to -Y by the horizontal movement assembly 76 The retreat position on the direction side prevents the defect removal layer forming assembly 70 from becoming an obstacle to the loading and unloading of the wafer with respect to the holding table 3 positioned in the loading/unloading area P1.

此外，在去疵層形成組件70中，如圖3所示，是將用於修整(磨銳及整形)去疵墊722的修整器單元80配設在去疵輪72的下方側。修整器單元80具備有固定於固定塊74的側面74a之托架81、及配設於托架81上之修整構件82。並且，要使用修整器單元80修整去疵墊722時，是在藉由旋轉組件71使去疵輪72旋轉時，以升降組件75將去疵墊722定位到使其接觸於修整構件82的高度後，藉由水平移動組件76使其水平移動，而藉由以修整構件82來對去疵墊722進行削除的作法實施修整。 In addition, in the defect-removing layer forming assembly 70, as shown in FIG. 3, a dresser unit 80 for dressing (sharpening and shaping) the defect-removing pad 722 is arranged below the defect-removing wheel 72. The dresser unit 80 includes a bracket 81 fixed to the side surface 74 a of the fixing block 74, and a dressing member 82 arranged on the bracket 81. In addition, when the trimming pad 722 is trimmed using the trimmer unit 80, the elevator assembly 75 is used to position the trimming pad 722 to a height where it is in contact with the trimming member 82 when the trimming wheel 72 is rotated by the rotating assembly 71 After that, the horizontal moving assembly 76 is used to move it horizontally, and the trimming member 82 is used to trim the de-defect pad 722 to implement trimming.

其次，詳述加工裝置1的動作例。成為加工對象之圖4所示的晶圓W是被加工物之一例，並不是特別限定的晶圓。作為晶圓W可包含例如Si晶圓、GaN晶圓、與SiC晶圓等。於晶圓W的正面Wa形成有複數個元件，且成為被保持在保持台3的被保持面。會在此正面Wa預先貼 附保護構件。另一方面，與晶圓W的正面Wa為相反側的背面Wb會被磨削、研磨，並且成為可形成去疵層的被加工面。加工前的晶圓W是在圖1所示的片匣5a中收容有複數個。 Next, an example of the operation of the processing device 1 will be described in detail. The wafer W shown in FIG. 4 used as a processing target is an example of a to-be-processed object, and is not specifically limited. The wafer W may include, for example, Si wafers, GaN wafers, and SiC wafers. A plurality of elements are formed on the front surface Wa of the wafer W, and they become the held surface held by the holding table 3. Will be pre-posted on the front Wa With protective components. On the other hand, the back surface Wb on the opposite side to the front surface Wa of the wafer W is ground and polished, and becomes a processed surface on which a defect removal layer can be formed. A plurality of wafers W before processing are accommodated in the cassette 5a shown in FIG. 1.

首先，搬入搬出組件6是從片匣5a中取出一片加工前的晶圓W，且是藉由X軸方向移動組件7使搬入搬出組件6朝例如-X方向移動而將晶圓W暫置在暫置組件8。接著，搬送組件10以吸附墊11吸附已在暫置組件8決定晶圓W的中心的位置之晶圓W，且將晶圓W搬送到在搬入搬出區域P1待機的保持台3。此時，使去疵層形成組件70沿著固定塊74朝例如-Y方向移動，而使其先退避到不會成為晶圓W往保持台3的搬入之妨礙的退避位置。保持台3是以使吸引源的吸引力作用之保持面3a來吸引保持晶圓W。 First, the loading and unloading assembly 6 takes out a wafer W before processing from the cassette 5a, and moves the loading and unloading assembly 6 in the -X direction by moving the assembly 7 in the X-axis direction to temporarily place the wafer W in the -X direction. Temporary component 8. Next, the transport module 10 sucks the wafer W at the position where the center of the wafer W is determined by the temporary module 8 with the suction pad 11, and transports the wafer W to the holding table 3 on standby in the carry-in/out area P1. At this time, the defect removal layer forming assembly 70 is moved along the fixed block 74 in the −Y direction, for example, and is first retracted to a retracted position that does not hinder the loading of the wafer W into the holding table 3. The holding table 3 attracts and holds the wafer W on a holding surface 3a that causes the suction force of the suction source to act.

其次，轉台2是朝例如箭頭A方向旋轉，而使位在搬入搬出區域P1的保持台3旋轉，並且將晶圓W對位到粗磨削區域P2。粗磨削進給組件30是藉由馬達32驅動滾珠螺桿31，藉此使粗磨削組件20朝向保持在保持台3的晶圓W並朝-Z方向下降。粗磨削組件20是一邊使主軸21旋轉一邊將晶圓W以磨削磨石25按壓著來粗磨削至達到所期望的厚度為止。在晶圓W的厚度達到所期望的厚度之時間點，藉由粗磨削進給組件30使粗磨削組件20朝+Z方向上升，即結束粗磨削。 Next, the turntable 2 rotates, for example, in the direction of arrow A to rotate the holding table 3 located in the carry-in/out area P1, and the wafer W is aligned to the rough grinding area P2. In the rough grinding feed assembly 30, the motor 32 drives the ball screw 31, thereby causing the rough grinding assembly 20 to descend toward the wafer W held on the holding table 3 and in the −Z direction. In the rough grinding assembly 20, while rotating the spindle 21, the wafer W is pressed by the grinding grindstone 25 for rough grinding until it reaches a desired thickness. When the thickness of the wafer W reaches the desired thickness, the rough grinding feed unit 30 raises the rough grinding unit 20 in the +Z direction, and the rough grinding ends.

粗磨削結束後，轉台2進一步朝箭頭A方向旋轉，且將已粗磨削過的晶圓W對位到精磨削區域P3。精磨 削進給組件50是藉由馬達52驅動滾珠螺桿51，藉此使精磨削組件40朝向保持在保持台3的晶圓W並朝-Z方向下降。精磨削組件40是一邊使主軸41旋轉一邊將晶圓W以磨削磨石45按壓著來精磨削至達到成品厚度為止。在晶圓W的厚度達到成品厚度之時間點，藉由精磨削進給組件50使精磨削組件40朝+Z方向上升，即結束精磨削。 After the rough grinding is finished, the turntable 2 further rotates in the direction of the arrow A, and the rough ground wafer W is aligned to the fine grinding area P3. fine grinding The cutting feed assembly 50 drives the ball screw 51 by the motor 52, thereby causing the fine grinding assembly 40 to descend toward the wafer W held on the holding table 3 and in the −Z direction. The finish grinding unit 40 is to press the wafer W with the grinding stone 45 while rotating the spindle 41 to finish grinding until the thickness of the finished product is reached. At the point in time when the thickness of the wafer W reaches the thickness of the finished product, the fine grinding feed assembly 50 raises the fine grinding assembly 40 in the +Z direction, that is, the finishing grinding ends.

精磨削結束後，轉台2進一步朝箭頭A方向旋轉，且將已精磨削過的晶圓W對位到研磨區域P4。圖2所示的研磨組件60是一邊旋轉主軸610且使研磨墊622以預定的旋轉速度旋轉，一邊藉由第1研磨進給組件65使研磨輪62與主軸殼體612一起下降。使旋轉的研磨墊622接觸於保持在保持台3的晶圓W的整個面，並且藉由第2研磨進給組件66使可動塊63在X軸方向上往復移動，藉此使旋轉的研磨墊622與晶圓W相對地滑動來研磨晶圓W。晶圓W的研磨中，是藉由從研磨漿料供給源將研磨漿料供給到旋轉的晶圓W與研磨墊622之間，以使由研磨液進行之化學上的作用與由研磨墊622進行之機械上的作用相輔相成，以將磨削時於晶圓W的被加工面上產生的加工應變去除。 After finishing grinding, the turntable 2 further rotates in the direction of arrow A, and aligns the finely ground wafer W to the grinding area P4. The polishing assembly 60 shown in FIG. 2 rotates the main shaft 610 and rotates the polishing pad 622 at a predetermined rotation speed, and the first polishing and feeding assembly 65 lowers the polishing wheel 62 together with the main shaft housing 612. The rotating polishing pad 622 is brought into contact with the entire surface of the wafer W held on the holding table 3, and the movable block 63 is reciprocated in the X-axis direction by the second polishing feed assembly 66, thereby making the rotating polishing pad 622 slides opposite to the wafer W to polish the wafer W. In the polishing of the wafer W, the polishing slurry is supplied from the polishing slurry supply source between the rotating wafer W and the polishing pad 622, so that the chemical action performed by the polishing liquid and the polishing pad 622 The mechanical actions that are performed complement each other to remove the processing strain generated on the processed surface of the wafer W during grinding.

研磨結束後，轉台2進一步朝箭頭A方向旋轉，且將已研磨的晶圓W對位到搬入搬出區域P1。宜到至少要開始進行去疵層形成之前，才使去疵層形成組件70沿著固定塊74朝例如+Y方向移動，而使其從上述的退避位置移動到搬入搬出區域P1。要在晶圓W的被加工面形成去疵層時，如圖4所示，是一邊使保持台3朝例如箭頭B方向旋 轉，並且旋轉主軸710而使去疵輪72以預定的旋轉速度朝例如箭頭B方向旋轉，一邊藉由圖3所示的升降組件75使去疵輪72與主軸殼體712一起下降。使去疵墊722接觸於保持在保持台3的晶圓W的背面Wb，並且藉由圖3所示的水平移動組件76使可動塊73在Y軸方向上往復移動，藉此使旋轉的去疵墊722與晶圓W相對地滑動來對晶圓W的背面Wb形成去疵層。 After the polishing is completed, the turntable 2 is further rotated in the direction of the arrow A, and the polished wafer W is aligned to the carry-in and carry-out area P1. It is preferable to move the defect removal layer forming assembly 70 along the fixed block 74 in the +Y direction at least before the formation of the defect removal layer starts, and move it from the above-mentioned retreat position to the carry-in and carry-out area P1. To form a defect-removing layer on the processed surface of the wafer W, as shown in FIG. 4, the holding table 3 is rotated in the direction of arrow B, for example. Then, the main shaft 710 is rotated to rotate the removing wheel 72 in the direction of arrow B at a predetermined rotation speed, and the removing wheel 72 is lowered together with the main shaft housing 712 by the lifting assembly 75 shown in FIG. 3. The de-defect pad 722 is brought into contact with the back surface Wb of the wafer W held on the holding table 3, and the movable block 73 is reciprocated in the Y-axis direction by the horizontal movement assembly 76 shown in FIG. The defect pad 722 slides relative to the wafer W to form a defect removal layer on the back surface Wb of the wafer W.

此時，藉由純水供給源90從去疵墊722的中心將純水供給到去疵墊722與晶圓W之接觸面。亦即，藉由使純水進入旋轉的晶圓W的背面Wb與去疵墊722的研磨面之間，可將由細微的瑕疵所構成的損傷層形成於晶圓W的背面Wb。所述損傷層是作為使其產生去疵效果的去疵層而發揮功能。如此進行，以藉由有別於研磨組件60之去疵層形成組件70，來研磨剛磨削、研磨後的晶圓W的背面Wb並於背面Wb形成去疵層。再者，在本實施形態中，雖然為了形成去疵層而使用純水，但除了純水以外，亦可使用用以中和在研磨時所使用的研磨漿料之藥液。換言之，使用了鹼性的研磨漿料來研磨時，只要供給酸性的藥液來使其中和即可。中和研磨漿料之藥液宜為不會與矽反應的液體。 At this time, the pure water supply source 90 supplies pure water from the center of the de-defect pad 722 to the contact surface of the de-defect pad 722 and the wafer W. That is, by allowing pure water to enter between the back surface Wb of the rotating wafer W and the polishing surface of the de-defect pad 722, a damaged layer composed of fine defects can be formed on the back surface Wb of the wafer W. The damaged layer functions as a defect-removing layer that produces a defect-removing effect. In this way, the defect-removing layer forming unit 70, which is different from the polishing unit 60, is used to polish the back surface Wb of the wafer W that has just been ground and polished, and to form a defect-removing layer on the back surface Wb. Furthermore, in this embodiment, although pure water is used for forming the defect removal layer, in addition to pure water, a chemical solution for neutralizing the polishing slurry used at the time of polishing may also be used. In other words, when an alkaline polishing slurry is used for polishing, it is only necessary to supply an acidic chemical solution to neutralize it. The chemical liquid for neutralizing the polishing slurry is preferably a liquid that does not react with silicon.

形成去疵層後，使圖1所示的去疵層形成組件70從搬入搬出區域P1移動到上述的退避位置。接著，搬送組件10會以吸附墊11吸附位在搬入搬出區域P1之保持台3所保持的加工完成之晶圓W，且將晶圓W搬送到洗淨組 件9。晶圓W是在藉由洗淨組件9而被施行洗淨處理、乾燥處理後，藉由搬入搬出組件6從洗淨組件9取出，且收容到片匣5b。如此進行，對於1片晶圓W的磨削、研磨及去疵層的形成即完成。然後，將上述同樣的加工對複數片晶圓W重複進行。 After the defect removal layer is formed, the defect removal layer forming assembly 70 shown in FIG. 1 is moved from the carry-in and carry-out area P1 to the aforementioned retracted position. Next, the transport assembly 10 will suck the processed wafer W held by the holding table 3 in the carry-in and carry-out area P1 with the suction pad 11, and transport the wafer W to the cleaning group Piece 9. After the wafer W has been subjected to the cleaning process and the drying process by the cleaning module 9, it is taken out from the cleaning module 9 by the carry-in/out module 6 and stored in the cassette 5b. In this way, the grinding, polishing, and the formation of the defect removal layer for one wafer W are completed. Then, the same processing as described above is repeated for a plurality of wafers W.

當使用去疵層形成組件70，並對複數個晶圓W連續地進行去疵層的形成時，由於去疵墊722變得鈍化或磨耗，因此在加工裝置1中，是使用圖3所示的修整器單元80來修整去疵墊722。具體而言，是藉由圖3所示的水平移動組件76，使可動塊73在Y軸方向上移動，且將去疵輪72定位到修整構件82的上方。接著，一邊藉由旋轉組件71旋轉主軸710且使去疵輪72旋轉，一邊藉由升降組件75使去疵墊722下降以將旋轉的去疵墊722按壓到修整構件82來進行削除，藉此進行去疵墊722的研磨面之修整。再者，去疵墊722的進行修整之時機並未特別受到限定，可以經常地監視去疵墊722的狀態來適當地實施修整，也可以定期地實施修整。 When the defect-removing layer forming assembly 70 is used and the formation of the defect-removing layer is continuously performed on a plurality of wafers W, since the defect-removing pad 722 becomes passivated or worn, the processing device 1 is used as shown in FIG. 3 The trimmer unit 80 is used to trim the defect-removing pad 722. Specifically, the movable block 73 is moved in the Y-axis direction by the horizontal moving assembly 76 shown in FIG. 3, and the defect removal wheel 72 is positioned above the dressing member 82. Next, while the main shaft 710 is rotated by the rotating assembly 71 and the de-defect wheel 72 is rotated, the de-defect pad 722 is lowered by the lifting assembly 75 to press the rotating de-defect pad 722 to the trimming member 82 for cutting, thereby The polishing surface of the de-defect pad 722 is trimmed. Furthermore, the timing of the trimming of the de-defect pad 722 is not particularly limited, and the state of the de-defect pad 722 may be constantly monitored to perform the trim appropriately, or the trim may be periodically implemented.

像這樣地，本發明之加工裝置1由於具備：轉台2，以中心為軸而可自轉地配設且沿著搬入搬出區域P1、粗磨削區域P2、精磨削區域P3、研磨區域P4旋轉；保持台3，以轉台2的中心為中心而以等角度方式配設且具有保持晶圓W的保持面3a；搬送組件10，相對於已定位在搬入搬出區域P1的保持台3搬入及搬出晶圓W；粗磨削組件20，將已定位在粗磨削區域P2之保持台3所保持的 晶圓W粗磨削至預定的厚度；精磨削組件40，將已定位在精磨削區域P3之保持台3所保持的晶圓W精磨削至成品厚度；研磨組件60，對已定位在研磨區域P4之保持台3所保持的晶圓W的被加工面進行研磨；及去疵層形成組件70，於已定位在搬入搬出區域P1之保持台3所保持的晶圓W的被加工面形成去疵層， 且去疵層形成組件70具備有：去疵輪72，於晶圓W的被加工面形成去疵層；旋轉組件71，使去疵輪72旋轉；升降組件75，使去疵輪72與旋轉組件71一起相對於保持台3的保持面3a在垂直方向(Z軸方向)上升降；及水平移動組件76，使去疵輪72與旋轉組件71一起相對於保持台3的保持面3a在水平方向(Y軸方向)上移動， 因此，在對晶圓W施行磨削、研磨後，使用成為有別於研磨組件60之機構的去疵層形成組件70，而變得可在短時間內於晶圓W的被加工面形成所期望的去疵層。 In this way, the processing device 1 of the present invention is provided with: the turntable 2 is arranged to be rotatable with the center as an axis, and rotates along the carry-in and carry-out area P1, the rough grinding area P2, the finishing grinding area P3, and the polishing area P4 ; Holding table 3, centered on the center of the turntable 2 and arranged at an equal angle, and having a holding surface 3a for holding the wafer W; the transfer assembly 10, carried in and out of the holding table 3 that has been positioned in the carry-in and carry-out area P1 Wafer W; rough grinding assembly 20, held by the holding table 3 that has been positioned in the rough grinding area P2 The wafer W is rough-ground to a predetermined thickness; the fine-grinding assembly 40 fine-grinds the wafer W held by the holding table 3 positioned in the fine-grinding area P3 to the thickness of the finished product; the grinding assembly 60 is positioned The processed surface of the wafer W held by the holding table 3 in the polishing area P4 is polished; and the defect-removing layer forming assembly 70 is processed on the wafer W held by the holding table 3 positioned in the carry-in/out area P1 The surface forms a defect-removing layer, And the defect-removing layer forming assembly 70 is provided with: a defect-removing wheel 72 to form a defect-removing layer on the processed surface of the wafer W; a rotating assembly 71 to rotate the defect-removing wheel 72; and a lifting assembly 75 to rotate the defect-removing wheel 72 and The assembly 71 is raised and lowered in the vertical direction (Z-axis direction) with respect to the holding surface 3a of the holding table 3; and the assembly 76 is moved horizontally so that the defect removal wheel 72 and the rotating assembly 71 are horizontal with respect to the holding surface 3a of the holding table 3 Move in the direction (Y-axis direction), Therefore, after the wafer W is ground and polished, the defect-removing layer forming assembly 70, which is a mechanism different from the polishing assembly 60, is used, and it becomes possible to form a surface on the processed surface of the wafer W in a short time. Desired defect removal layer.

關於本實施形態所示的去疵層形成組件70，雖然是針對具備有使用純水之濕式型的去疵墊722的情形作了說明，但並非限定於此構成，使用乾式的去疵墊來將去疵層形成在晶圓W的背面Wb亦可。此時，宜使用將乾式的去疵墊與保持台覆蓋之護罩，以防止以去疵墊在晶圓W的被加工面形成去疵層時發生的粉塵飛散之情形。 Regarding the defect-removing layer forming assembly 70 shown in this embodiment, although the description is made for the case where the wet-type defect-removing pad 722 using pure water is provided, it is not limited to this configuration, and a dry-type defect-removing pad is used. The defect removal layer may be formed on the back surface Wb of the wafer W. At this time, it is advisable to use a shield covering the dry-type de-defect pad and the holding table to prevent the dust from scattering when the de-defect pad is formed on the processed surface of the wafer W to form a de-defect layer.

本實施形態所示的加工裝置1，雖然說明了在去疵層形成組件70具備有水平移動組件76的情況，但並非限定於此構成，也可以設成不具備水平移動組件76的構 成。此時，修整器單元80本身最好設成可相對於去疵墊722在水平方向(Y軸方向)上移動的構成。 Although the processing apparatus 1 shown in this embodiment has described the case where the removal layer forming unit 70 is provided with the horizontal movement unit 76, it is not limited to this configuration, and it may be provided without the horizontal movement unit 76. to make. At this time, the dresser unit 80 itself is preferably configured to be movable in the horizontal direction (Y-axis direction) with respect to the defect removal pad 722.

1:加工裝置 1: Processing device

2:轉台 2: turntable

3:保持台 3: hold the stage

3a:保持面 3a: Keep the face

4:隔板 4: partition

5a、5b:片匣 5a, 5b: cassette

6:搬入搬出組件 6: Moving in and out of components

7:X方向移動組件 7: Move the component in the X direction

8:暫置組件 8: Temporary components

9:洗淨組件 9: Wash the components

10:搬送組件 10: Transport components

11:吸附墊 11: Adsorption pad

12:支臂部 12: Support arm

13:支撐桿 13: Support rod

14:移動塊 14: Move the block

15:支撐柱 15: Support column

16、33、53:導軌 16, 33, 53: rail

20:粗磨削組件 20: Rough grinding components

21、41:主軸 21, 41: Spindle

22、42:主軸殼體 22, 42: Spindle shell

23、32、43、52:馬達 23, 32, 43, 52: Motor

24:粗磨削輪 24: Rough grinding wheel

25、45:磨削磨石 25, 45: Grinding grindstone

30:粗磨削進給組件 30: Rough grinding feed assembly

31、51:滾珠螺桿 31, 51: Ball screw

34、54:升降板 34, 54: Lifting board

340、540:引導溝 340, 540: Guidance groove

40:精磨削組件 40: Fine grinding components

44:精磨削輪 44: Fine grinding wheel

50:精磨削進給組件 50: Fine grinding feed assembly

60:研磨組件 60: Grinding components

70:去疵層形成組件 70: Defect layer to form components

73:可動塊 73: movable block

74:固定塊 74: fixed block

100:裝置基座 100: Device base

101:直立壁 101: Upright Wall

102a、102b:載台 102a, 102b: carrier

P1:搬入搬出區域 P1: Moving in and out of the area

P2:粗磨削區域 P2: Rough grinding area

P3:精磨削區域 P3: Fine grinding area

P4:研磨區域 P4: Grinding area

A:箭頭 A: Arrow

+X、+Y、+Z、-X、-Y、-Z:方向 +X, +Y, +Z, -X, -Y, -Z: direction

Claims (2)

一種加工裝置，是在晶圓的被加工面施行磨削與研磨後，於該被加工面形成去疵層的加工裝置，其具備：轉台，以中心為軸而可自轉地配設，且將晶圓對位到搬入、搬出晶圓的搬入搬出區域、磨削晶圓的磨削區域及研磨晶圓的研磨區域；保持台，以該轉台的中心為中心而以等角度方式配設，且具有保持晶圓的保持面；搬送組件，將晶圓相對於已定位在該搬入搬出區域的該保持台搬入及搬出；磨削組件，將已定位在該磨削區域之該保持台所保持的晶圓磨削以形成預定的厚度；研磨組件，對已定位在該研磨區域之該保持台所保持的晶圓的被加工面進行研磨；及去疵層形成組件，於已定位在該搬入搬出區域之該保持台所保持的晶圓的被加工面形成去疵層，該去疵層形成組件具備：旋轉組件，具有以裝設有圓板狀的去疵墊之安裝座的中心為軸而旋轉的主軸；升降組件，使該旋轉組件相對於該保持台的該保持面朝垂直方向升降；純水供給組件，從該去疵墊的中心將純水供給到晶圓；及 修整構件，修整該去疵墊。 A processing device is a processing device that forms a defect-removing layer on the processed surface of a wafer after grinding and polishing the processed surface. The wafer is aligned to the loading and unloading area for loading and unloading wafers, the grinding area for grinding wafers, and the grinding area for grinding wafers; the holding table is arranged in an equiangular manner with the center of the turntable as the center, and It has a holding surface for holding the wafer; the transport assembly moves the wafer in and out of the holding table that has been positioned in the carry-in and out area; the grinding assembly transfers the crystal held by the holding table that has been positioned in the grinding area Circular grinding to form a predetermined thickness; a polishing assembly to grind the processed surface of the wafer held by the holding table that has been positioned in the polishing area; and a defect-removing layer forming assembly that is positioned in the carry-in and carry-out area A defect-removing layer is formed on the processed surface of the wafer held by the holding table, and the defect-removing layer forming assembly is provided with: a rotating assembly having a main shaft that rotates around the center of the mounting seat on which the disc-shaped defect-removing pad is installed as the axis Lifting assembly, which lifts the rotating assembly in a vertical direction relative to the holding surface of the holding table; Pure water supply assembly, which supplies pure water to the wafer from the center of the de-defect pad; and Trim the components and trim the defect-removing pad. 如請求項1之加工裝置，其具備使前述旋轉組件朝著與前述保持台的前述保持面平行的水平方向移動的水平移動組件，使前述去疵墊可從前述搬入搬出區域退避。 The processing device according to claim 1, including a horizontal moving unit that moves the rotating unit in a horizontal direction parallel to the holding surface of the holding table, so that the defect removal pad can be retracted from the carry-in and carry-out area.
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