TW201923842A - 基板的熱處理方法 - Google Patents

基板的熱處理方法 Download PDF

Info

Publication number: TW201923842A
Authority: TW; Taiwan
Prior art keywords: atoms; silicon substrate; silicon; substrate; epitaxial layer
Prior art date: 2017-10-26

Application number

TW107133388A

Other languages

English (en)

Chinese (zh)

Inventor

鈴木克佳

Original Assignee

日商信越半導體股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-10-26

Filing date

2018-09-21

Publication date

2019-06-16

2018-09-21 Application filed by 日商信越半導體股份有限公司 filed Critical 日商信越半導體股份有限公司

2019-06-16 Publication of TW201923842A publication Critical patent/TW201923842A/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 187
238000000034 method Methods 0.000 title claims abstract description 54
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 189
229910052710 silicon Inorganic materials 0.000 claims abstract description 187
239000010703 silicon Substances 0.000 claims abstract description 187
229910052796 boron Inorganic materials 0.000 claims abstract description 101
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 99
238000005468 ion implantation Methods 0.000 claims abstract description 81
230000007547 defect Effects 0.000 claims abstract description 79
238000010438 heat treatment Methods 0.000 claims abstract description 67
239000013078 crystal Substances 0.000 claims description 15
238000002513 implantation Methods 0.000 claims description 12
238000004151 rapid thermal annealing Methods 0.000 description 46
230000015572 biosynthetic process Effects 0.000 description 26
150000002500 ions Chemical class 0.000 description 23
230000000052 comparative effect Effects 0.000 description 16
230000002776 aggregation Effects 0.000 description 7
238000004519 manufacturing process Methods 0.000 description 7
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
238000004220 aggregation Methods 0.000 description 6
229910052785 arsenic Inorganic materials 0.000 description 6
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
229910052799 carbon Inorganic materials 0.000 description 6
239000004065 semiconductor Substances 0.000 description 6
238000009792 diffusion process Methods 0.000 description 5
230000005855 radiation Effects 0.000 description 5
238000004627 transmission electron microscopy Methods 0.000 description 5
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
230000005540 biological transmission Effects 0.000 description 3
-1 carbon ions Chemical class 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000007943 implant Substances 0.000 description 3
239000012535 impurity Substances 0.000 description 3
238000001000 micrograph Methods 0.000 description 3
229910052757 nitrogen Inorganic materials 0.000 description 3
229910052698 phosphorus Inorganic materials 0.000 description 3
239000011574 phosphorus Substances 0.000 description 3
238000011084 recovery Methods 0.000 description 3
238000001004 secondary ion mass spectrometry Methods 0.000 description 3
230000001133 acceleration Effects 0.000 description 2
230000002411 adverse Effects 0.000 description 2
238000007667 floating Methods 0.000 description 2
238000005054 agglomeration Methods 0.000 description 1
230000004520 agglutination Effects 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
238000009833 condensation Methods 0.000 description 1
230000005494 condensation Effects 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000007789 gas Substances 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
230000000116 mitigating effect Effects 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
230000002265 prevention Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
High Energy & Nuclear Physics (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Recrystallisation Techniques (AREA)

TW107133388A 2017-10-26 2018-09-21 基板的熱處理方法 TW201923842A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2017207631A JP2019080008A (ja)	2017-10-26	2017-10-26	基板の熱処理方法
JPJP2017-207631		2017-10-26

Publications (1)

Publication Number	Publication Date
TW201923842A true TW201923842A (zh)	2019-06-16

Family

ID=66247872

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW107133388A TW201923842A (zh)	2017-10-26	2018-09-21	基板的熱處理方法

Country Status (3)

Country	Link
JP (1)	JP2019080008A (ja)
TW (1)	TW201923842A (ja)
WO (1)	WO2019082536A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2021034408A (ja) *	2019-08-15	2021-03-01	信越半導体株式会社	シリコン基板の熱処理方法
CN112795886B (zh) *	2020-12-24	2022-10-21	上海治臻新能源股份有限公司	一种用于金属双极板成形的导电耐蚀预涂层及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH10261588A (ja) *	1997-03-19	1998-09-29	Mitsubishi Electric Corp	半導体装置
JP5395354B2 (ja) *	2005-03-15	2014-01-22	日本電気株式会社	半導体装置の製造方法及び半導体装置
KR100644019B1 (ko) *	2005-06-17	2006-11-10	매그나칩 반도체 유한회사	씨모스 이미지센서 및 그 제조 방법
JP5793456B2 (ja) *	2012-03-23	2015-10-14	株式会社東芝	半導体装置およびその製造方法、基板
US10079257B2 (en) *	2012-04-13	2018-09-18	Taiwan Semiconductor Manufacturing Co., Ltd.	Anti-reflective layer for backside illuminated CMOS image sensors
WO2014033982A1 (ja) *	2012-08-28	2014-03-06	パナソニック株式会社	半導体素子の製造方法
JP5799936B2 (ja) *	2012-11-13	2015-10-28	株式会社Sumco	半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
JP6302216B2 (ja) *	2013-11-08	2018-03-28	ルネサスエレクトロニクス株式会社	半導体装置およびその製造方法

2017
- 2017-10-26 JP JP2017207631A patent/JP2019080008A/ja active Pending
2018
- 2018-09-12 WO PCT/JP2018/033734 patent/WO2019082536A1/ja active Application Filing
- 2018-09-21 TW TW107133388A patent/TW201923842A/zh unknown

Also Published As

Publication number	Publication date
WO2019082536A1 (ja)	2019-05-02
JP2019080008A (ja)	2019-05-23

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