TW201841254A - 基板處理裝置及用以處理基板之方法 - Google Patents
基板處理裝置及用以處理基板之方法 Download PDFInfo
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Abstract
一種基板處理裝置包含:一腔室、一設於該腔室中之基座、一射叢板、及一直流電源供應器,該射叢板具有一板部件、一環型部件、及一引線,該板部件設有複數個貫穿孔且由一導體形成,該環型部件連接至該板部件之一外緣、圍繞該板部件、且由一導體形成,該引線嵌入該環型部件中且在平面圖中圍繞該板部件及該基座,該射叢板設置成在該腔室中面朝該基座,該直流電源供應器將一直流電供應至該引線。
Description
說明有關於一種基板處理裝置及用以處理基板之方法的範例。
日本專利案第JP2009-152603號揭露一種具有清潔功能之電漿化學氣相沈積(CVD)裝置,其具有一改良射叢板,該射叢板具有複數個孔洞且該等孔洞具有一均勻剖面面積,以產生高清潔率。該射叢板可作為一電極,且可具有一導電延伸件,該延伸件連接至一電源。清潔氣體與反應源氣流二者通過之射叢板可包含一孔洞加工表面區域,其大小尺寸與習用者不同,以在一沈積製程期間確保一良好薄膜厚度均勻性。該孔洞加工表面區域大小尺寸可基於待處理基板之大小尺寸、或該射叢板整個表面之大小尺寸而變化。
日本專利案第JP2016-122564號揭露一種用於基板之電漿處理的方法及裝置。在此揭露中,一處理室具有一基板支持件、及面朝該基板支持件之一蓋總成。該蓋總成具有一電漿源,該電漿源包含一感應線圈且可包含複數個巢套導電環,其中該感應線圈佈置於一導電板內。該感應線圈係與該導電板大致共面,且藉一絕緣體而與該導電板絕緣,該絕緣體配合於一通道內、或巢套於該等導電環內,該通道形成於該導電板中。一場集中器係環繞該感應線圈設置,且藉複數個絕緣體而與該感應線圈絕緣。該電漿源係由一導電支持板支持。一氣體分配器通過該支持板之一中心開口而供應氣體至該腔室,且由通過該導電板佈置之一管道而供應氣體至該電漿源。
日本專利案第JP2009-152603號中之射叢板係一平行平面電漿化學氣相沈積(CVD)裝置之一電極。在日本專利案第JP2009-152603號之裝置架構中,相較於該射叢板之一中心部份正下方的一電漿密度,圍繞該中心部份之該射叢板外側正下方的一電漿密度有時減小。這將造成不可能在基板之整個表面上施行均勻電漿處理的問題。例如,薄膜形成在一晶圓外緣處及環繞該晶圓外緣變得不足,且薄膜厚度之同平面均勻性及薄膜品質下降。
說明中之某些範例可解決上述問題。此中說明之某些範例可提供一射叢板、一基板處理裝置、及一用以處理基板而能夠對該基板施加均勻電漿處理之方法。
在某些範例中,一種基板處理裝置包含一腔室、一設於該腔室中之基座、一射叢板、及一直流電源供應器,該射叢板具有一板部件、一環型部件、及一引線,該板部件設有複數個貫穿孔且由一導體形成,該環型部件連接至該板部件之一外緣、圍繞該板部件、且由一導體形成,該引線嵌入該環型部件中且在平面圖中圍繞該板部件及該基座,該射叢板設置成在該腔室中面朝該基座,該直流電源供應器將一直流電供應至該引線。
在某些範例中,一種用以處理基板之方法包含提供基板於一基座上,及施加射頻功率至設於該基座上之一射叢板,該射叢板具有一板部件及一環型部件,該板部件設有複數個貫穿孔且由一導體形成,該環型部件連接至該板部件之一外緣、圍繞該板部件、且由一導體形成,透過該複數個貫穿孔將一氣體供應至該基板上且藉此在該基板上生成電漿。當施加射頻功率時,使一直流電流流通過一嵌入該環型部件中且在平面圖中圍繞該板部件的引線、或一嵌入該基座中且沿該基座之一外緣在平面圖中設置成環型的基座內引線,藉以在該基板之一外緣正上方形成一磁場。
在某些範例中,一種基板處理裝置包含一腔室、一設於該腔室中之基座、一射叢板、一基座內引線、及一直流電源供應器,該射叢板包含一板部件及一環型部件,該板部件設有複數個貫穿孔且由一導體形成,該環型部件連接至該板部件之一外緣、圍繞該板部件、且由一導體形成,該射叢板設置成在該腔室中面朝該基座,該基座內引線嵌入該基座中且沿該基座之一外緣在平面圖中設置成環型,該直流電源供應器將一直流電流供應至該基座內引線。
將參考隨附圖式來說明一射叢板、一基板處理裝置、及一用以處理基板之方法。相同或相當之組件將被分派相同參考符號,且省略重複之說明。
第1圖係一基板處理裝置10之一剖面圖。基板處理裝置10係一平行平面電漿處理裝置。基板處理裝置10設有一腔室12。腔室12被稱作一「反應腔室」。一基座14設於腔室12中。基座14係一基板安裝於上之一部件。在某些範例中,一電阻式加熱裝置嵌入基座14中。基座14可電氣接地。基座14設有複數個基座銷15,該等基座銷從基座14凸出或包封於基座14中,以用於舉升/降下該基板。
譬如由一絕緣體形成之一排氣道16設於腔室12上方。排氣道16形成為一環型,以在平面圖中圍繞基座14。一待用於基板處理之氣體被導引入排氣道16中,接著通過一排氣管19且排出至外側。
一射叢板18設於排氣道16上方。射叢板18設有一板部件18A、一環型部件18B、及一引線18C。板件部18A係一導體,其設有複數個貫穿孔18a。貫穿孔18a沿一y軸方向穿過板部件18A。環型部件18B係一導體,其連接至板部件18A之一外緣,且圍繞板部件18A。板部件18A及環型部件18B係由鋁、或一鋁合金、或其他適當金屬製成。引線18C嵌入環型部件18B中。引線18C在平面圖中圍繞板部件18A。引線18C可在平面圖中圍繞基座14。引線18C可藉一絕緣塗料包覆,以與環型部件18B電氣絕緣。
在腔室12中,基座14與射叢板18互相面對。射叢板18與基座14提供一成對平行平板之結構。亦即,射叢板18與基座14提供平行平面電極。
為生成電漿,高頻電源供應器22及24透過一匹配電路20而電氣連接至板部件18A及環型部件18B。高頻電源供應器22及24將射頻功率供應至板部件18A及環型部件18B。高頻電源供應器22及24係以譬如數百千赫(kHz)到數十兆赫(MHz)之頻率施加電力至板部件18A及環型部件18B。為改善薄膜品質之可控性,高頻電源供應器22可供應一低頻成份,且高頻電源供應器24可供應一高頻成份。
一直流電源供應器30連接至引線18C,以將一直流電供應至引線18C。直流電源供應器30將譬如1安培等級之一直流電供應至引線18C。第2圖係引線18C及基座14之一平面圖。引線18C設置成一環型,以圍繞基座14。引線18C與基座14之一外緣14a之間的一距離X2係譬如5到10公釐等級。為此,引線18C位於基座14外緣14a外側5到10公釐。第2圖中之一箭頭表示引線18C之一直流電流動方向。直流電源供應器30造成一直流電依該箭頭所指示之一順時鐘方向流動通過引線18C。
現在將再次說明第1圖。一氣體供應管40連接至板部件18A之一頂部。一閥42約略設於氣體供應器管40之中點。閥42可開啟/封閉氣體供應管40。此外,供應一氣體之一氣源44連接至氣體供應管40。氣源44係供應用以處理該基板之各類氣體。此類氣體之範例包含一材料氣體、一反應氣體、及一沖洗氣體。氣源44可供應所有用於生成電漿之已知類型氣體。一氣體係從氣源44經由氣體供應管40、板部件18A正上方之一空間、及貫穿孔18a,供應至基座14正上方之一位置。
高頻電源供應器22及24、匹配電路20、直流電源供應器30、閥42、及氣源44連接至一處理模組控制器(PMC)50。PMC50基於一指定方式來控制高頻電源供應器22及24、匹配電路20、直流電源供應器30、閥42、及氣源44之操作。
第3圖係射叢板18及基座14之一放大視圖。當處理一300公釐晶圓時,基座14之一寬度X1係譬如302到304公釐。基座14外緣14a與引線18C之間在一水平方向上之一距離X2係譬如5到10公釐等級。因此,引線18C並非設於基座14正上方,而在基座14正上方之一位置外側。第3圖中,引線18C位於環型部件18B之左與右側上。一直流電朝圖式之前側方向流動通過右側引線18C,且朝圖式之背側方向流動通過左側引線18C。
以下將說明一種使用基板處理裝置10來處理一基板之方法。第4圖係當電漿處理正在一基板上進行時之射叢板18及基座14的一剖面圖。首先,一基板60安裝於基座14上。此步驟稱作一「安裝步驟」。基板60係譬如一300公釐晶圓。基板60之一外緣與基座14之外緣14a之間在該水平方向上之一距離係譬如1到2公釐等級。因此,第4圖中之一距離X3係譬如1到2公釐。
其後,該程序進展至一電漿步驟。在該電漿步驟中,藉透過該複數個貫穿孔18a供應一氣體至基板60上,且同時施加射頻功率至板部件18A及環型部件18B上,以在基板60上方生成電漿62。更明確地,PMC50操控高頻電源供應器22及24,且因此施加射頻功率至板部件18A及環型部件18B。此外,PMC50控制氣源44及閥42,且藉此供應一指定氣體至基板60上。
在該電漿步驟中,除上述之射頻功率施加及氣體供應外,亦使一直流電流動通過引線18C。更明確地,使數安培等級之一直流電從直流電源供應器30流至引線18C中。該流通過引線18C之直流電係譬如1安培。接著,第4圖中,在一正z軸方向上之一直流電流通過右側引線18C,且在一負z軸方向上之一直流電流通過左側引線18C。一磁場MF1係藉流通過右側引線18C之直流電形成,且一磁場MF2係藉流通過左側引線18C之直流電形成。磁場MF1之方向係一逆時鐘方向,且磁場MF2之方向係一順時鐘方向。
是以,可藉由使一直流電通過引線18C,以在基板60外緣正上方形成一磁場。該磁場容許一磁力施加至電漿62。更明確地,提供之磁場在基板60外緣正上方及其附近強於在基板60中心正上方之一位置者。此外,引線18C位於基板60外緣之外側達一距離X2+X3。是以,可藉由使一直流電通過引線18C,以在基板60外緣正上方形成一具有垂直朝下分量之磁場。如第4圖中藉磁場MF1及MF2顯示者,藉該直流電通過引線18C,而在基板60外緣正上方生成之磁場具有一「水平分量」及一「垂直分量」。該「水平分量」係在與該基板中心對立之一方向上的一分量。該「垂直分量」係在一垂直朝下方向上之一分量。
第5圖係圖示一電漿密度之一示意圖。一參考符號「xa」表示基板60之一左端正上方的一位置,及參考符號「xb」表示基板60之一右端正上方的一位置。當基板60係一300公釐晶圓時,從「xa」到「xb」之距離係300公釐。第5圖中之縱軸顯示一電漿密度。第5圖中,一實線顯示依據本範例在基板處理裝置10處生成之一電漿密度,及一虛線顯示依據一比較範例之一電漿密度。依據該比較範例之基板處理裝置具有一架構,其中引線18C自基板處理裝置10移除。在該比較範例之情況下,觀察到電漿密度在一端部正上方之一位置處較在該基板中心正上方之一位置處顯著減小。這被認為主要歸因於,在電漿生成開始時位於該基板外緣正上方之一位置附近的電子,被吸引至存在於該基板中心正上方之一高密度陽離子且朝該基板中心正上方移動。
相反地,依據基板處理裝置10,一磁場主要係藉使一直流電通過引線18C而形成於基板60外緣正上方之一區域中。該磁場造成電子移動,以環繞磁力線。該運動稱作「迴旋加速器運動」。造成該磁場以使電子被捕捉於該基板60外緣正上方區域中者,將防止電子被吸引至基板60中心正上方之位置。請注意,在平面圖中,基板60外緣具有特定寬度,且該「外緣正上方區域」具有一甜甜圈型區域且該區域具有特定寬度。該「外緣正上方區域」係譬如藉第4圖中斷線圈起之一區域。
是以,藉防止基板60外緣正上方區域中之電子被吸引至基板60中心正上方之位置,可防止該基板外緣正上方區域中之電漿密度減小。藉此,可保持基板60正上方之電漿密度大致不變。是以,可將均勻電漿處理施加於基板60。此外,可藉僅將引線18C提供至具有氣體供應及射頻施加之二習知功能之射叢板,而簡易地製造依據本範例之射叢板18。
設於基板60外緣正上方區域中之磁場具有一「水平分量」及一「垂直分量」。依據發明人實施之一試驗,該磁場之垂直分量適用於將電子保持於基板60外緣正上方區域中。為了在基板60外緣正上方區域中提供一足夠強度之垂直分量,第4圖中之X2+X3必須為0。換言之,在平面圖中,需在基板60外緣與引線18C之間保持某一特定距離。可藉設定X2+X3達譬如5到10公釐等級,以提供一充分之垂直分量。請注意,X3係一相當小的數值,且包含一取決於基板處理裝置而定之略微差異,及因此X2可設定為5到10公釐。
該磁場之水平分量係在與基板60中心對立之一方向上的一分量。亦即,該水平分量係在第4圖中左側之一負x軸方向上、及在第4圖中右側之一正x軸方向上的一分量。由於此等水平分量係在電漿62擴寬所在之一方向上作用,因此咸認為這為有助於對基板60施加均勻電漿處理。
一引線可設於腔室12之一側壁上,且可藉使用該引線而在一基板60外緣正上方區域中形成一磁場。然而,由於腔室12之側面係與基板60保持距離,因此難以在基板60外緣正上方區域中形成一足夠強度之磁場。儘管可藉使一高直流電通過該引線而解決此問題,然該高直流電流動通過所在裝置中之一溫升可導致各類不良的影響。相反的,由於基板處理裝置10將引線18C嵌入射叢板18之環型部件18B中,因此引線18C與基板60之間的距離較小。藉此,可在基板60外緣正上方區域中形成一足夠強度之磁場,而無需供應一高直流電至引線18C。
在不丟失其特徵的情況下,可依各種方式修飾依據某些範例之射叢板、基板處理裝置、及用以處理基板之方法。例如,基板之處理內容並非以薄膜形成為限,而可適用於所有使用電漿之處理類型。上述之特定數值為範例。範例中所述之修飾亦可應用至依據以下範例之射叢板、基板處理裝置、及用以處理基板之方法。請注意到,由於依據以下範例之射叢板、基板處理裝置、用以處理基板之方法具有許多與上述範例者相似之特點,因此以下說明將聚焦在與上述範例之差異。
第6圖係依據另一範例之射叢板18及基座14的一剖視圖。在一剖視圖中提供複數個引線18C。引線18C之繞組數在譬如10到100範圍內。可將某一引線纏繞複數次,或可提供複數個個別獨立引線。在一剖面圖中之所有情況下皆顯露複數個引線18C。當提供複數個引線18C時,可藉在該電漿步驟中使譬如一10到100毫安培直流電通過各別引線,而在一基板外緣正上方區域中形成一足夠強度之磁場。提供複數圈引線18C,可降低流通過引線18C之一直流電,且藉此防止該裝置溫升。
第7圖係依據另一範例之射叢板18及基座14的一剖面圖。引線18C嵌入環型部件18B之一底端部中。環型部件18B之「底端部」係一包含環型部件18B底端之區域。因此,依據本範例之引線18C在一負y軸方向上位於超過前述引線18C。設置引線18C在環型部件18B之底端部中者,可減少引線18C與該基板之間在垂直方向上之距離,且同時保持引線18C與該基板之間在水平方向上之距離。因此,可對該基板外緣正上方區域供應一較第1圖範例者強之磁場。由於引線18C朝下移動,因此可加強該基板外緣正上方區域中之磁場垂直分量。
已在某些範例中研究基板外緣正上方區域中之電漿密度。然而,由於該基板外緣與該基座外緣之間無重大位置差異,因此即使當「基板外緣正上方區域」被視為「基座外緣正上方區域」時,上述相同說明仍適用。此外,在某些範例中說明之特徵亦可結合使用。
依據某些範例,使一直流電流動通過設於該射叢板中之一引線,且一磁場形成於一電漿外側部份中。藉此,可對該基板施加一均勻電漿處理。
當然,根據以上教示,可有眾多之範例修飾及變更。
第8圖係顯示依據另一範例之一基板處理裝置的一示意圖。一基座內引線72嵌入基座14中。基座內引線72連接至一直流電源供應器30。直流電源供應器30供應一直流電流至基座內引線72。
第9圖係第8圖之基座14及其周邊的一***視圖。基座14包含一加熱器組件14A、一設於加熱器組件14A下方之加熱器組件14B、及一設於加熱器組件14A上方之上方組件14C。例如,譬如不銹鋼等金屬可用作為加熱器組件14A及14B、以及上方組件14C之材料。上方組件14C較加熱器組件14A及14B薄。譬如藉上方組件14C之下方表面與加熱器組件14A之上方表面14f相互焊接、及加熱器組件14A之下方表面14r與加熱器組件14B之上方表面相互焊接,可將該基座佈設置成一聯合本體。
要安裝於上方組件14C上之一基板60係設於上方組件14C之上方。基板60譬如係一晶圓。
基座內引線72包含一第一部件72a及一第二部件72b。第一部件72a穿過加熱器組件14A及14B,且連接至直流電源供應器30。第二部件72b連接至第一部件72a,且設於二加熱器組件14A、14B與上方組件14C之間。第二部件72b沿該基座外緣而在平面圖中設置成環型。
一加熱器引線80設於加熱器組件14A之下方表面14r中。加熱器引線80嵌入該基座中,譬如藉由將加熱器引線80***加熱器組件14A與加熱器組件14B之間。加熱器組件14B覆蓋加熱器引線80,藉此可防止加熱器引線80曝露。加熱器引線80透過一穿過加熱器組件14B之連接引線82而連接至一交流電源供應器84。交流電源供應器84將一交流電流供應加熱器引線80,以使加熱器引線80生熱而提高基座14之溫度達一既定溫度。加熱器組件14A設有加熱器引線80,且上方組件14C設有基座內引線72的第二部件72b,藉此抑制因通過此等引線之電流流動所導致的磁場雙向干擾。
第10圖係加熱器引線80之一平面圖。加熱器引線80具有與連接引線82連結之連接點80a、80b。連接點80a、80b位於加熱器組件14A之中心處。加熱器引線80成型為,從連接點80a通過加熱器組件14A之一外部且到達連接點80b。
第10圖之一點鏈線代表基座內引線72的第二部件72b之一平面位置。基座內引線72的第二部件72b位在超出加熱器引線80設置所在部位之外側。因此,加熱器引線80在平面圖中被基座內引線72圍繞。
以下將說明一種藉第8圖至第10圖例示之基板處理裝置來處理基板的方法。在一電漿步驟中,使一直流電流流通過基座內引線72,以在基板60外緣正上方形成磁場。該磁場係與藉使電流流通過設於上述射叢板18中之引線18C而出現的磁場不同。藉使該直流電流流通過基座內引線72,將形成從該基座上方表面中心側指向該上方表面環周側之磁場,且生成藉該磁場及電漿電場所導致之勞侖茲(Lorentz)力。該勞侖茲力捕捉該基座正上方電漿中之電子,且將該電漿整體拉至該環周部,以增強該電漿之均勻性。因此,依據第8圖至第10圖之架構,可獲致修正該電漿之一效果。
基座14之溫度係藉流動通過加熱器引線80之電流控制。例如,使50或60千赫之5安培且100瓦特的電流流通過加熱器引線80。當使一大直流電流流通過基座內引線72時,將有因該大直流電流之影響而使基座14之溫度分布變為一非期望溫度分布的風險。因此,使一相對較小電流流通過基座內引線72。
咸認為,由於一相對較小之直流電流通過基座內引線72之流動而發生於基板60外緣正上方的磁場,不致大幅改變該電漿之中心部,但將該電漿捕捉於基座內引線72之鄰近區域。咸認為,提供如上所述之磁場,適合改正譬如電漿密度僅在該電漿周邊上降低之問題。
當加熱器引線80之佈線外型直接反映於該基座上方表面之溫度分布中時,將不可能均勻地加熱基板60。於是,當期望均勻地加熱基板60時,將增大加熱器組件14A之厚度達某種程度。在這種情況下,加熱器引線80之外型直接反映於基板60之熱分布中的現象將可避免,使得可大體上均勻地加熱基板60。提供上方組件14C意謂,加熱器引線80與基板60之間的距離增加,且這有助於設置基座內引線72在靠近基板60之一位置。此外,由於基座內引線72之第二部件72b係沿該基座外緣設置,因此其不致大幅影響該基座中心處之溫度。
第11圖係顯示基座內引線72及其披覆之一示意圖。由於一般引線之一披覆的耐熱溫度大體上範圍從180℃到200℃,因此該披覆之一介電崩潰風險發生在該基座溫度增加至200℃或更高時。因此,在假設該基座之溫度增加的情況下,可提供一披覆,該披覆包覆基座內引線72且具有500℃或更高溫度之耐熱性。例如,基座內引線72可覆以一絕緣體72d,且絕緣體72d可覆以矽玻璃(siliglass)編織物72e。
第12圖係顯示依據另一範例之一基板處理裝置及佈線位置的示意圖。該基板處理裝置包含一引線18C及一基座內引線72,該引線18C嵌入一射叢板18中,該基座內引線72嵌入基座14中。依據該基板處理裝置,藉由在該電漿步驟中使一直流電流流動通過引線18C或基座內引線72,可在該基板外緣正上方形成磁場。可使該直流電流同時流動通過引線18C及基座內引線72二者。例如,可藉第8圖中顯示之一直流電源供應器30,將該直流電流供應至引線18C及基座內引線72二者。可從直流電源供應器30供應一直流電流至基座內引線72,且同時從另一直流電源供應器供應一直流電流至引線18C。使較流動通過引線18C之電流小的一電流流動通過基座內引線72,藉此可抑制該基座之溫升,且可將磁場侷限於僅在該基座之周邊上。
如上所述,可提供該基板處理裝置,其包含第1圖至第7圖所例示設於該射叢板中之引線、及第8圖至第11圖中所例示設於該基座中之基座內引線72,藉此電漿分布可藉由該射叢板之磁場粗略地調整、且藉由該基座之磁場精細地調整。
已例示於上之基板處理裝置可用作為一電漿增強化學氣相沈積(PE-CVD)裝置、或一電漿增強原子層沈積(PE-ALD)裝置。已例示於上之基板處理裝置可增強電漿分布之均勻性,且可在一基板上施行均勻處理。特別是,該基板處理裝置有助於各變型結構之薄膜厚度、薄膜品質、或薄膜披覆的均勻性。
10‧‧‧基板處理裝置
12‧‧‧腔室
14‧‧‧基座
14A‧‧‧加熱器組件
14B‧‧‧加熱器組件
14C‧‧‧上方組件
14a‧‧‧外緣
14f‧‧‧上方表面
14r‧‧‧下方表面
15‧‧‧基座銷
16‧‧‧排氣道
18‧‧‧射叢板
18A‧‧‧板部件
18B‧‧‧環型部件
18C‧‧‧引線
18a‧‧‧貫穿孔
19‧‧‧排氣管
20‧‧‧匹配電路
22‧‧‧高頻電源供應器
24‧‧‧高頻電源供應器
30‧‧‧直流電源供應器
40‧‧‧氣體供應管
42‧‧‧閥
44‧‧‧氣源
50‧‧‧處理模組控制器
60‧‧‧基板
62‧‧‧電漿
72‧‧‧基座內引線
72a‧‧‧第一部件
72b‧‧‧第二部件
72d‧‧‧絕緣體
72e‧‧‧編織物
80‧‧‧加熱器引線
80a‧‧‧連接點
80b‧‧‧連接點
82‧‧‧連接引線
84‧‧‧交流電源供應器
MF1‧‧‧磁場
MF2‧‧‧磁場
X1‧‧‧基座寬度
X2‧‧‧引線與基座外緣之距離
X3‧‧‧基板外緣與基座外緣在水平方向上之距離
xa‧‧‧基板左端正上方的位置
xb‧‧‧基板右端正上方的位置
第1圖係一基板處理裝置之一剖面圖; 第2圖係引線及基座之一平面圖; 第3圖係射叢板及基座之一放大剖面圖; 第4圖係具有電漿之射叢板及基座的一剖面圖; 第5圖係圖示一電漿密度之一示意圖; 第6圖係射叢板及基座之一剖面圖; 第7圖係射叢板及基座之一剖面圖; 第8圖係顯示一基板處理裝置之一示意圖; 第9圖係基座及其周邊之一***圖; 第10圖係加熱器引線之一平面圖; 第11圖係顯示基座內引線及其披覆之一示意圖;及 第12圖係顯示一基板處理裝置及佈線位置之一細部示意圖。
Claims (16)
- 一種基板處理裝置,包括: 一腔室; 一基座,設於該腔室中; 一射叢板,包括一板部件、一環型部件、及一引線,該板部件設有複數個貫穿孔且由一導體形成,該環型部件連接至該板部件之一外緣、圍繞該板部件、且由一導體形成,該引線嵌入該環型部件中且在平面圖中圍繞該板部件及該基座,該射叢板設置成在該腔室中面朝該基座;及 一直流電源供應器,將一直流電供應至該引線。
- 如申請專利範圍第1項所述之基板處理裝置,更包括一高頻電源供應器,將射頻功率提供至該板部件及該環型部件。
- 如申請專利範圍第1或2項所述之基板處理裝置,其中該引線位於該基座之一外緣外側5到10公釐。
- 如申請專利範圍第1或2項所述之基板處理裝置,其中該引線有複數個。
- 如申請專利範圍第1或2項所述之基板處理裝置,其中該引線嵌入該環型部件之一底端部中。
- 如申請專利範圍第1或2項所述之基板處理裝置,其中該引線係藉一絕緣塗料包覆,且藉此與該環型部件電氣絕緣。
- 一種用以處理基板之方法,該方法包括: 提供該基板於一基座上;及 施加射頻功率至設於該基座上之一射叢板,該射叢板包括一板部件及一環型部件,該板部件設有複數個貫穿孔且由一導體形成,該環型部件連接至該板部件之一外緣、圍繞該板部件、且由一導體形成,以及透過該複數個貫穿孔將氣體供應至該基板上且藉此在該基板上生成電漿, 其中當施加射頻功率時,使一直流電流流通過一嵌入該環型部件中且在平面圖中圍繞該板部件的引線、或一嵌入該基座中且沿該基座之一外緣在平面圖中設置成環型的基座內引線,藉以在該基板之一外緣正上方形成一磁場。
- 如申請專利範圍第7項所述之用以處理基板之方法,其中一直流電通過該引線,藉以在該基板外緣正上方形成之磁場包含一垂直朝下分量。
- 如申請專利範圍第7或8項所述之用以處理基板之方法,其中該引線有複數個,且當施加射頻功率時,使一10到100毫安培直流電通過各別引線。
- 如申請專利範圍第8項所述之用以處理基板之方法,其中藉使該直流電通過該引線而生成之磁場包含一在該基板外緣正上方、與該基板中心對立之方向上的分量。
- 一種基板處理裝置,包括: 一腔室; 一基座,設於該腔室中; 一射叢板,包括一板部件及一環型部件,該板部件設有複數個貫穿孔且由一導體形成,該環型部件連接至該板部件之一外緣、圍繞該板部件、且由一導體形成,該射叢板設置成在該腔室中面朝該基座; 一基座內引線,嵌入該基座中且沿該基座之一外緣在平面圖中設置成環型;及 一直流電源供應器,將一直流電流供應至該基座內引線。
- 如申請專利範圍第11項所述之基板處理裝置,包括: 一加熱器引線,嵌入該基座中且在平面圖中被該基座內引線圍繞;及 一交流電源供應器,將一交流電流供應至該加熱器引線。
- 如申請專利範圍第12項所述之基板處理裝置,其中該基座包括二加熱器組件、及一設於該二加熱器組件上方之上方組件,其中該加熱器引線設於該二加熱器組件之間,且該基座內引線設於該二加熱器組件與該上方組件之間。
- 如申請專利範圍第11至13項中任一項所述之基板處理裝置,包括一披覆,包覆該基座內引線且具有500℃或更高溫度之耐熱性。
- 如申請專利範圍第11至13項中任一項所述之基板處理裝置,其中該射叢板包括一嵌入該環型部件中且在平面圖中圍繞該板部件及該基座之引線,且該引線係藉該直流電源供應器或另一直流電源供應器而供應有一直流電流。
- 如申請專利範圍第11至13項中任一項所述之基板處理裝置,包括一高頻電源供應器,將射頻功率提供至該板部件及該環型部件。
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US15/890,850 | 2018-02-07 | ||
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-
2018
- 2018-02-07 US US15/890,850 patent/US10629415B2/en active Active
- 2018-02-21 TW TW107105754A patent/TW201841254A/zh unknown
- 2018-03-27 KR KR1020180035431A patent/KR20180109751A/ko unknown
-
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- 2020-03-09 US US16/813,356 patent/US11348766B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10629415B2 (en) | 2020-04-21 |
KR20180109751A (ko) | 2018-10-08 |
US20200211827A1 (en) | 2020-07-02 |
US20180286638A1 (en) | 2018-10-04 |
US11348766B2 (en) | 2022-05-31 |
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