TW201836176A

TW201836176A - Heat conduction structure of flip-chip LED capable of rapidly guiding waste heat generated in a small space to the outside for heat dissipation through a heat conduction path formed by eutectic soldering

Info

Publication number: TW201836176A
Application number: TW106109959A
Authority: TW
Inventors: 葉瑲郎
Original assignee: 葉瑲郎
Priority date: 2017-03-24
Filing date: 2017-03-24
Publication date: 2018-10-01

Abstract

The present invention relates to a quick heat conduction structure of a flip-chip LED, which includes a metal substrate for heat conduction and a flip-chip LED. The metal substrate is bonded with an insulating film formed thereon a copper foil wiring and a window. The metal substrate is extended with at least one eutectic soldering part exposed to the window, so as to solder a heat conduction pad corresponding to the flip-chip LED or a negative electrode soldering pad to the at least one eutectic soldering part in a eutectic soldering manner, thereby forming a eutectic heat conduction path. As such, during the operation of the flip-chip LED, waste heat generated in a small space can be rapidly guided to the outside for heat dissipation through the aforementioned heat conduction path formed by eutectic soldering. In addition, the area of the copper foil wiring is expanded as much as possible under the condition that there is no short circuit generated, so as to compensate for the heat conduction boundary barrier of the insulating film between the copper foil wiring and the metal substrate.

Description

覆晶式LED導熱構造 Flip-chip LED heat conduction structure

本發明為一種覆晶式LED的快速導熱構造，技術領域涉及一導熱用的金屬基板以及一共晶焊接於金屬基板上的覆晶式LED(Flip-Chip LED)；共晶焊接後二者之間形成一共晶結合的導熱路徑，能夠將該覆晶式LED運作時產生的廢熱，在極小的空間裡無界面阻礙(Boundary Barrier)地快速導出到外部散熱，進而可以在相同面積下提高覆晶式LED的輸出功率及使用壽命。 The invention relates to a rapid thermal conduction structure of a flip-chip LED, and the technical field relates to a metal substrate for heat conduction and a flip-chip LED (Flip-Chip LED) eutectic soldered on a metal substrate; Forming a eutectic heat conduction path, the waste heat generated by the operation of the flip chip LED can be quickly exported to the external heat dissipation in a small space without an interface barrier (Boundary Barrier), thereby improving the flip chip type under the same area. LED output power and service life.

眾所週知，LED雖然具有省電、使用壽命長、體積小等各種優點，但是LED運作發光時會產生廢熱，該廢熱如果無法有效地快速傳導到外部散熱，其高熱將會對LED上的螢光粉、矽膠造成光衰或其他損害，此特性將直接或間接影響到LED的使用壽命以及品質，而且使LED的輸出功率受到限制，所以，如何提昇LED的散熱效率一直是相關業者努力的目標。 As we all know, although LED has various advantages such as power saving, long service life and small size, the LED will generate waste heat when it emits light. If the waste heat cannot be quickly and effectively transmitted to the outside, its high heat will be on the phosphor powder on the LED. If the silicone gel causes light decay or other damage, this characteristic will directly or indirectly affect the service life and quality of the LED, and the output power of the LED is limited. Therefore, how to improve the heat dissipation efficiency of the LED has been the goal of the relevant industry.

其次，近年來覆晶(Flip-Chip)封裝技術的發展對於二極體元件而言是一個非常重要的里程碑。所謂“覆晶”，是將晶片的電極連接點在製程中長出凸塊(bump)，然後將晶片翻轉過來使凸塊與基板直接焊接而得其名。由於製程中，不需要如同傳統晶粒封裝時，必須將晶粒的兩個電極分別與電極接腳利用焊接或打線方式電連接，所以讓二極體元件成品的體積可以大幅縮小到接近晶粒核心尺寸，因此稱為晶粒尺寸封裝(CSP)。 Secondly, the development of Flip-Chip packaging technology in recent years is a very important milestone for diode components. The so-called "flip-chip" is a method in which the electrode connection point of the wafer is raised in the process, and then the wafer is turned over to directly solder the bump to the substrate. Since the process does not need to be like a conventional die package, the two electrodes of the die must be electrically connected to the electrode pins by soldering or wire bonding, so that the volume of the finished diode component can be greatly reduced to near the die. The core size is therefore called the Grain Size Package (CSP).

上述覆晶封裝技術固然能夠應用在LED上，製作出覆晶式LED使而其體積大幅縮小，然而覆晶式LED底部的空間極小，若無法將運作時產生的廢熱快速導出散熱，則應用在例如多數個覆晶式LED陣列所組成的照明燈具時，只能將各覆晶式LED之間的間距加寬、分散排置，以避免各覆晶式LED產生的廢熱集中。但如此一來，即便每一個覆晶式LED的體積再小，還是無法讓應用端(例如前述燈具)的體積縮小。 The above-mentioned flip chip packaging technology can be applied to LEDs to produce a flip-chip LED, and its volume is greatly reduced. However, the space at the bottom of the flip-chip LED is extremely small, and if the waste heat generated during operation cannot be quickly extracted and radiated, it is applied to For example, in a lighting fixture composed of a plurality of flip-chip LED arrays, the spacing between the flip-chip LEDs can only be widened and dispersed to avoid the waste heat concentration generated by the flip-chip LEDs. However, even if the volume of each flip-chip LED is small, the volume of the application end (such as the aforementioned lamp) cannot be reduced.

此外，關於熱的傳導技術中，當熱由甲介質到乙介質時，因二者两相接觸面的接觸狀況不一，例如表面乾淨度、粗糙度、硬軟度、接觸壓力等等，造成電子雲層因温度差異，在游動時由一方介質的表面再到另一方質的表面熱傳導時會產生熱傳導界面阻礙(Boundary Barrier)。而熱傳導界面阻礙，或可通過導熱膏、錫漿、銀漿、礸石膏等導熱性較佳的介質來盡量降低阻礙，但導熱效果仍不如共晶焊接來得有效率。 In addition, in the heat conduction technology, when the heat is from the medium to the medium, the contact between the two surfaces is different, such as surface cleanliness, roughness, hardness, contact pressure, etc., resulting in electrons. Due to the temperature difference, the cloud layer generates a heat conduction interface hindrance when it is thermally conducted from the surface of one medium to the surface of the other side during swimming. The heat conduction interface hinders, or the heat conduction paste, tin paste, silver paste, gypsum gypsum and other medium with better thermal conductivity can be used to minimize the hindrance, but the heat conduction effect is still not as efficient as the eutectic soldering.

目前已知的相關技術中，CN101030613A將一覆晶式LED焊接在一導熱基板上，其散熱方式是將覆晶式LED的負極焊接在該導熱基板上的焊層上，以期能快速導熱。然而，該CN101030613A在導熱基板上先設置一層絕緣膜再設置焊層，使LED負極必須透過絕緣膜才能將廢熱傳導到導熱基板，除了絕緣膜的材質具有較高的熱阻以外，絕緣膜與LED之間、以及絕緣膜與導熱基板之間，還形成了兩個熱傳導界面阻礙(Boundary Barrier)，顯然無法達到快速導熱的功效。 In the related art currently known, CN101030613A solders a flip-chip LED on a heat-conducting substrate by dissipating the negative electrode of the flip-chip LED on the solder layer on the heat-conducting substrate in order to quickly conduct heat. However, the CN101030613A firstly provides an insulating film on the heat-conducting substrate and then provides a solder layer, so that the LED negative electrode must pass through the insulating film to conduct the waste heat to the heat-conducting substrate, except that the material of the insulating film has a high thermal resistance, the insulating film and the LED. Between the insulating film and the heat-conducting substrate, two heat-conducting interface barriers are formed, which obviously cannot achieve the effect of rapid heat conduction.

M500997在覆晶式LED的正極與負極之間設置了一個固晶膠，並且在散熱基板的絕緣膜上相對應設置一缺口，然後使覆晶式LED底部的固晶膠通過缺口與散熱基板連接來導熱。這種方式雖然在覆晶式LED與散熱基板之間少了一層絕緣膜，然而利用固晶膠的導熱效果並不甚佳，該固晶膠與LED之間以及固晶膠與與導熱基板之間，仍然多出了兩個熱傳導界面阻礙，其導熱效率仍然不理想。 M500997 is provided with a solid crystal glue between the positive electrode and the negative electrode of the flip-chip LED, and a gap is formed on the insulating film of the heat-dissipating substrate, and then the die-bonding glue at the bottom of the flip-chip LED is connected to the heat-dissipating substrate through the gap. To conduct heat. Although this method has one layer of insulating film between the flip-chip LED and the heat-dissipating substrate, the heat-conducting effect of the solid-crystal glue is not very good, and the solid-crystal glue and the LED and the solid crystal glue and the heat-conducting substrate are not good. There are still two more heat conduction interface barriers, and the thermal conductivity is still not ideal.

CN103066193A在一般的SMD型LED底面一體設置了一正、負極焊盤以及一散熱焊盤，並且在PCB銅箔線路的正負極接點之間另外設置一H形銅嵌塊，利用銅嵌塊與LED的散熱焊盤焊接來導熱。這種結構設計中，由於SMD型LED的散熱焊盤並非直接由LED晶體引出，而是間接由LED安裝的PCB或支架上接出，因此這種結構設計仍然存在兩組熱傳導界面阻礙。此外，雖在正、負極銅箔線路之間，再額外設置一H形銅嵌塊，但也只是增加後段傳熱的面積，無法改善熱傳導效果。 CN103066193A integrally provides a positive and negative electrode pad and a heat dissipation pad on the bottom surface of a general SMD type LED, and an H-shaped copper block is additionally disposed between the positive and negative contacts of the PCB copper foil line, and the copper block is used. The thermal pad of the LED is soldered to conduct heat. In this structural design, since the heat dissipation pad of the SMD type LED is not directly taken out by the LED crystal, but is indirectly connected by the LED mounted PCB or the bracket, there are still two sets of heat conduction interface hindrance in this structural design. In addition, although an H-shaped copper insert is additionally provided between the positive and negative copper foil lines, the heat transfer area of the rear stage is increased, and the heat conduction effect cannot be improved.

有鑑於上述已知技術的各種缺失，本發明人以累積多年相關領域研究設計的實務經驗，發明出一種能快速導熱的覆晶式LED導熱構造，其目的在於：通過金屬基板與覆晶式LED之間共晶結合的導熱路徑，讓覆晶式LED運作時的廢熱可以在極小的空間裡無界面阻礙(Boundary Barrier)地快速導出到外部散熱，不但可以在相同面積下提高覆晶式LED的輸出功率及使用壽命，而且大幅簡化製程。 In view of the various shortcomings of the above-mentioned known technologies, the present inventors have invented a flip-chip LED heat-conducting structure capable of rapid thermal conduction by accumulating practical experience in research and design in related fields for the purpose of: through a metal substrate and a flip-chip LED The eutectic heat conduction path allows the waste heat of the flip-chip LED to be quickly exported to the external heat dissipation in a small space without any interface hindrance (Boundary Barrier), which can improve the flip-chip LED in the same area. Output power and longevity, and greatly simplify the process.

為達成上述目的，本發明覆晶式LED導熱構造，包括一導熱用的金屬基板以及一共晶焊接在該金屬基板上的覆晶式LED，其中：該覆晶式LED底部一體延伸有二凸塊，該二凸塊彼此間隔排列而分別作為一正極焊盤、以及一負極焊盤；該金屬基板上貼合有一層絕緣膜，該絕緣膜表面相對於覆晶式LED的底部設有一與正極焊盤共晶焊接的正極銅箔線路、一相對於負極焊盤的窗口、以及一與負極焊盤共晶焊接的負極銅箔線路，且該金屬基板在窗口位置延伸有一共晶焊接部，該共晶焊接部頂部裸露於該窗口；以及該正極焊盤與正極銅箔線路之間、以及負極焊盤與該共晶焊接部及負極銅箔線路之間共晶焊接，進而分別在各共晶焊接位置形成共晶結合層，使覆晶式LED與金屬基板之間通過各共晶結合層而形成共晶結合的導熱路徑。 In order to achieve the above object, the flip-chip LED thermal conductive structure of the present invention comprises a metal substrate for heat conduction and a flip-chip LED eutectic soldered on the metal substrate, wherein: the bottom of the flip-chip LED integrally extends with two bumps The two bumps are spaced apart from each other to serve as a positive electrode pad and a negative electrode pad respectively; the metal substrate is bonded with an insulating film, and the surface of the insulating film is provided with a positive electrode with respect to the bottom of the flip chip LED. a eutectic soldered positive copper foil line, a window relative to the negative electrode pad, and a negative copper foil line eutectic soldered to the negative electrode pad, and the metal substrate has a eutectic soldering portion extending at a window position, the total The top of the crystal soldering portion is exposed to the window; and the eutectic soldering between the positive electrode pad and the positive copper foil line, and between the negative electrode pad and the eutectic soldering portion and the negative copper foil line, and then in each eutectic soldering The position forms a eutectic bonding layer, and a eutectic bonding heat conduction path is formed between the flip chip LED and the metal substrate through each eutectic bonding layer.

實施時，所述正極銅箔線路與共晶焊接部上方分別設置有一層焊層，其中該共晶焊接部上方的焊層側向延伸至負極銅箔線路上方，且各焊層經共晶焊接後分別形成所述的共晶接合層。 When implemented, the positive copper foil line and the eutectic soldering portion are respectively provided with a solder layer, wherein the solder layer above the eutectic soldering portion extends laterally above the negative copper foil line, and each solder layer is eutectic soldered The eutectic bonding layer is formed separately thereafter.

實施時，所述共晶焊接部與正極銅箔線路之間設有絕緣體。 In implementation, an insulator is disposed between the eutectic solder portion and the positive copper foil line.

本發明另提供一種覆晶式LED導熱構造，包括一導熱用的金屬基板以及一共晶焊接在該金屬基板上的覆晶式LED，其中：該覆晶式LED底部一體延伸有至少三個凸塊，該至少三個凸塊彼此間隔排列而分別作為一正極焊盤、一負極焊盤、以及至少一導熱焊盤；該金屬基板上貼合有一層絕緣膜，該絕緣膜表面相對於覆晶式LED的底部設有：一與正極焊盤共晶焊接的正極銅箔線路、一與負極焊盤共晶焊接的負極銅箔線路、以及一相對於導熱焊盤的窗口，且該金屬基板在窗口位置延伸有一共晶焊接部；該共晶焊接部頂部裸露於該窗口，以供所述的導熱焊盤共晶焊接於該共晶焊接部上，進而使覆晶式LED底部與金屬基板之間在各共晶焊接位置分別形成一共晶結合層，其中覆晶式LED的至少一導熱焊盤與金屬基板的共晶焊接部之間通過該相對應的共晶結合層而形成一共晶結合的導熱路徑。 The present invention further provides a flip-chip LED heat-conducting structure, comprising a metal substrate for heat conduction and a flip-chip LED eutectic soldered on the metal substrate, wherein: the bottom of the flip-chip LED integrally extends with at least three bumps The at least three bumps are spaced apart from each other to serve as a positive electrode pad, a negative electrode pad, and at least one thermal pad; the metal substrate is bonded with an insulating film, and the surface of the insulating film is opposite to the flip chip The bottom of the LED is provided with: a positive copper foil line eutectic soldered to the positive electrode pad, a negative copper foil line eutectic soldered to the negative electrode pad, and a window opposite to the thermal conductive pad, and the metal substrate is in the window Positioning a eutectic soldering portion; the top of the eutectic soldering portion is exposed to the window for eutectic soldering of the thermal conductive pad to the eutectic soldering portion, thereby enabling a gap between the bottom of the flip-chip LED and the metal substrate Forming a eutectic bonding layer at each eutectic soldering position, wherein a eutectic junction is formed between the at least one thermal conductive pad of the flip-chip LED and the eutectic soldering portion of the metal substrate through the corresponding eutectic bonding layer The heat conduction path.

藉由上述構造，當覆晶式LED發光時，由於該負極焊盤或導熱焊盤是由覆晶式LED底部一體延伸、該共晶焊接部是由金屬基板延伸，因此負極焊盤或導熱焊盤與該共晶焊接部之間經共晶焊接所形成的共晶結合層，即可在覆晶式LED與金屬基板之間形成一共晶結合的導熱路徑，進而讓覆晶式LED發光時產生的廢熱，在覆晶式LED底部極小的空間裡無界面阻礙地快速傳導到金屬基板上以供散熱；此外，所述覆晶式LED與銅箔線路之間的共晶焊接結構，使銅箔線路可以在不造成短路漏電為原則下儘量擴大線路寬度，以增加散熱面積的方式來補償、改善銅箔線路與金屬基板之間絕緣膜的高熱阻問題，而且能夠在相同面積下提高覆晶式LED的輸出功率及使用壽命。 With the above configuration, when the flip-chip LED emits light, since the negative electrode pad or the thermal conductive pad is integrally extended from the bottom of the flip-chip LED, and the eutectic soldering portion is extended by the metal substrate, the negative electrode pad or the thermal conductive solder a eutectic bonding layer formed by eutectic soldering between the disk and the eutectic soldering portion forms a eutectic heat conduction path between the flip chip LED and the metal substrate, thereby generating a blister LED when illuminating The waste heat is quickly conducted to the metal substrate for heat dissipation without any interface hindrance in a very small space at the bottom of the flip-chip LED; in addition, the eutectic solder structure between the flip chip LED and the copper foil line makes the copper foil The circuit can maximize the line width without causing short-circuit leakage, and compensate for and improve the high thermal resistance of the insulating film between the copper foil line and the metal substrate by increasing the heat dissipation area, and can improve the flip-chip type under the same area. LED output power and service life.

實施時，所述覆晶式LED底部的正極焊盤與負極焊盤設置在覆晶式LED底部的兩側，該至少一導熱焊盤設置在該正極焊盤與負極焊盤之間。 In implementation, the positive and negative pads of the bottom of the flip-chip LED are disposed on both sides of the bottom of the flip-chip LED, and the at least one thermal pad is disposed between the positive and negative pads.

實施時，所述共晶焊接部、正極銅箔線路以及負極銅箔線路上方，分別設置有至少一層共晶焊接用的焊層，各焊層經共晶焊接後，分別形成所述的共晶結合層，且所述共晶焊接部與正極銅箔線路及負極銅箔線路之間分別設有白漆等絕緣體。 In implementation, at least one solder layer for eutectic soldering is disposed on the eutectic soldering portion, the positive copper foil line, and the negative copper foil line, and each solder layer is eutectic soldered to form the eutectic The bonding layer is provided with an insulator such as white lacquer between the eutectic soldering portion and the positive electrode copper foil line and the negative electrode copper foil line.

實施時，該導熱焊盤為多數個彼此間隔設置在正極焊盤與負極焊盤之間，且該共晶焊接部上的共晶結合層之間以及多個導熱焊盤之間的位置填充有錫漿或導熱膏。 In implementation, the thermal conductive pads are spaced apart from each other between the positive electrode pad and the negative electrode pad, and the positions between the eutectic bonding layers on the eutectic soldering portion and between the plurality of thermally conductive pads are filled with Tin paste or thermal paste.

實施時，所述共晶焊接部是在該絕緣膜貼合於金屬基板表面後，於該絕緣膜的窗口內填充金屬材料，並且以共晶焊接方式使該窗口內的金屬材料與金屬基板表面共晶焊接所構成。 In the implementation, the eutectic soldering portion is filled with a metal material in the window of the insulating film after the insulating film is attached to the surface of the metal substrate, and the metal material and the metal substrate surface in the window are eutectic soldered. It consists of eutectic soldering.

實施時，所述共晶焊接部是以腐蝕方式將金屬基板表面相對於窗口位置以外的區域去除一固定厚度所形成，使該共晶焊接部頂面突出於金屬基板表面，並且在絕緣膜貼合於金屬基板表面後穿過該窗口而裸露。 In implementation, the eutectic soldering portion is formed by removing a fixed thickness of the surface of the metal substrate relative to the window position by etching, so that the top surface of the eutectic soldering portion protrudes from the surface of the metal substrate, and is pasted on the insulating film After being bonded to the surface of the metal substrate, it is exposed through the window.

實施時，所述共晶焊接部是在金屬基板相對於窗口的位置向上沖壓彎折所形成，使該共晶焊接部頂面突出於金屬基板表面，並且穿過該窗口而裸露。 In implementation, the eutectic soldering portion is formed by stamping and bending upward at a position of the metal substrate relative to the window such that the top surface of the eutectic soldering portion protrudes from the surface of the metal substrate and is exposed through the window.

相較於先前技術，本發明在覆晶式LED與金屬基板之間形成共晶結合的導熱路徑，不但可以讓覆晶式LED發光時產生的廢熱，在覆晶式LED底部極小的空間裡無界面阻礙地快速傳導到金屬基板上以供散熱，而且覆晶式LED與銅箔線路之間的共晶焊接結構，使銅箔線路時可以在不造成短路漏電為原則下儘量擴大線路寬度，以增加散熱面積的方式來補償、改善銅箔線路與金屬基板之間絕緣膜的高熱阻問題，進而提高覆晶式LED的輸出功率及使用壽命，而且在實施時只需將覆晶式LED與金屬基板以共晶焊接技術即可結合，具有加工容易、節省成本的優點。 Compared with the prior art, the present invention forms a eutectic heat conduction path between the flip-chip LED and the metal substrate, which not only allows the waste heat generated by the flip-chip LED to emit light, but has no space in the bottom of the flip-chip LED. The interface is hindered from being quickly conducted to the metal substrate for heat dissipation, and the eutectic soldering structure between the flip-chip LED and the copper foil line enables the copper foil line to maximize the line width without causing short-circuit leakage. Increase the heat dissipation area to compensate and improve the high thermal resistance of the insulating film between the copper foil line and the metal substrate, thereby improving the output power and service life of the flip-chip LED, and only need to cover the flip-chip LED and metal during implementation. The substrate can be combined by eutectic soldering technology, which has the advantages of easy processing and cost saving.

以下依據本發明之技術手段，列舉出適於本發明之實施方式，並配合圖式說明如後： In the following, according to the technical means of the present invention, embodiments suitable for the present invention are listed, and the following description is in conjunction with the drawings:

10‧‧‧金屬基板 10‧‧‧Metal substrate

11‧‧‧絕緣膜 11‧‧‧Insulation film

11a‧‧‧正極銅箔線路 11a‧‧‧positive copper foil line

11b‧‧‧負極銅箔線路 11b‧‧‧Negative copper foil line

12‧‧‧窗口 12‧‧‧ window

13‧‧‧共晶焊接部 13‧‧‧ Eutectic Welding Department

13a‧‧‧金屬材料 13a‧‧‧Metal materials

13b‧‧‧平台 13b‧‧‧ platform

13c‧‧‧彎折段 13c‧‧‧Bend section

14‧‧‧絕緣體 14‧‧‧Insulator

20‧‧‧覆晶式LED 20‧‧‧Flip-chip LED

21‧‧‧凸塊 21‧‧‧Bumps

21a‧‧‧正極焊盤 21a‧‧‧positive pad

21b‧‧‧負極焊盤 21b‧‧‧Negative pad

21c‧‧‧導熱焊盤 21c‧‧‧ Thermal pad

22‧‧‧焊層 22‧‧‧welding layer

22a‧‧‧共晶結合層 22a‧‧‧ Eutectic bonding layer

22b‧‧‧錫漿或導熱膏 22b‧‧‧ solder paste or thermal paste

第一圖：本發明第一實施方式的分解圖。 First Figure: An exploded view of a first embodiment of the present invention.

第二圖：本發明第一實施方式的組合示意圖。 Second drawing: a schematic view of the combination of the first embodiment of the present invention.

第三圖：本發明第二實施方式的分解圖。 Third Figure: An exploded view of a second embodiment of the present invention.

第四圖：本發明第二實施方式的組合示意圖。 Fourth drawing: a schematic diagram of the combination of the second embodiment of the present invention.

第五圖：本發明第三實施方式的分解圖。 Fifth drawing: an exploded view of a third embodiment of the present invention.

第六圖：本發明第三實施方式的組合示意圖。 Figure 6 is a schematic view showing the combination of the third embodiment of the present invention.

第七圖：本發明第四實施方式的分解圖。 Figure 7 is an exploded view of a fourth embodiment of the present invention.

第八圖：本發明第四實施方式的組合示意圖。 Eighth: A schematic view of the combination of the fourth embodiment of the present invention.

第九圖：本發明第五實施方式的分解圖。 Ninth diagram: an exploded view of a fifth embodiment of the present invention.

第十圖：本發明第五實施方式的組合示意圖。 Fig. 10 is a schematic view showing the combination of the fifth embodiment of the present invention.

第十一圖：本發明第六實施方式的分解圖。 Figure 11 is an exploded view of a sixth embodiment of the present invention.

第十二圖：本發明第六實施方式的組合示意圖。 Twelfth Diagram: A schematic diagram of the combination of the sixth embodiment of the present invention.

第十三圖：本發明中覆晶LED實施方式的前視圖。 Thirteenth Figure: Front view of an embodiment of a flip chip LED in the present invention.

第十四圖：本發明中覆晶LED實施方式的仰視圖。 Figure 14 is a bottom plan view of an embodiment of a flip chip LED of the present invention.

第十五圖：本發明第七實施方式的分解圖。 Fifteenth Diagram: An exploded view of a seventh embodiment of the present invention.

第十六圖：本發明第七實施方式的組合示意圖。 Figure 16 is a schematic view showing the combination of the seventh embodiment of the present invention.

第十七圖：本發明第八實施方式的分解圖。 Figure 17 is an exploded view of an eighth embodiment of the present invention.

第十八圖：本發明第八實施方式的組合示意圖。 Figure 18 is a schematic view showing the combination of the eighth embodiment of the present invention.

第十九圖：本發明第九實施方式的組合示意圖(1)。 Fig. 19 is a schematic view showing the combination of the ninth embodiment of the present invention (1).

第二十圖：本發明第九實施方式的組合示意圖(2)。 Fig. 20 is a schematic view (2) of the combination of the ninth embodiment of the present invention.

如第一圖到第六圖所示，本發明能快速導熱的覆晶式LED導熱構造的第一到第三實施方式，包括一導熱用的金屬基板10以及一共晶焊接在該金屬基板10上的覆晶式LED20，該金屬基板10及覆晶式LED20的詳細結構如下：該覆晶式LED20的底部一體延伸有兩個凸塊21，該兩個凸塊21彼此間隔排列而分別作為一正極焊盤21a、以及一負極焊盤21b。實施時，所述覆晶式LED20底部的兩個凸塊21在製作上可以配合覆晶式LED20的製造過程一體完成，例如利用蝕刻開溝、黃光、離子布植或擴散等方式，即可以讓覆晶式LED20底部一體延伸出兩個凸塊21。 As shown in the first to sixth figures, the first to third embodiments of the flip-chip LED heat-conducting structure capable of rapid thermal conductivity of the present invention include a metal substrate 10 for heat conduction and a eutectic soldering on the metal substrate 10. The detailed structure of the flip-chip LED 20, the metal substrate 10 and the flip-chip LED 20 is as follows: the bottom of the flip-chip LED 20 integrally extends with two bumps 21, and the two bumps 21 are spaced apart from each other to serve as a positive electrode. A pad 21a and a negative pad 21b. When implemented, the two bumps 21 at the bottom of the flip-chip LED 20 can be fabricated integrally with the manufacturing process of the flip-chip LED 20, for example, by etching trenching, yellow light, ion implantation or diffusion, etc. The bottom of the flip-chip LED 20 is integrally extended with two bumps 21.

該金屬基板10的表面貼合有一層絕緣膜11，該絕緣膜11的表面相對於覆晶式LED20的底部設有：一與正極焊盤21a共晶焊接的正極銅箔線路11a、一與負極焊盤21b相對應的窗口12、以及一設置在窗口12側邊與負極焊盤21b共晶焊接的負極銅箔線路11b。 The surface of the metal substrate 10 is bonded with an insulating film 11 having a surface opposite to the bottom of the flip-chip LED 20: a positive copper foil line 11a eutectic soldered to the positive electrode pad 21a, and a negative electrode The window 12 corresponding to the pad 21b and a negative electrode copper foil line 11b which is eutectic welded to the negative electrode pad 21b on the side of the window 12 are provided.

該絕緣膜11設置的目的是讓金屬基板10與正極銅箔線路11a及負極銅箔線路11b之間絕緣。實施時，該絕緣膜11是由絕緣材料所構成的薄膜，並且在製作過程中以印刷電路板製作方式設置正極銅箔線路11a及負極銅箔線路11b並且切割出窗口12後，將該絕緣膜11薄膜貼合於金屬基板10上即可完成。 The insulating film 11 is provided for the purpose of insulating the metal substrate 10 from the positive electrode copper foil line 11a and the negative electrode copper foil line 11b. In the implementation, the insulating film 11 is a film made of an insulating material, and the positive copper foil line 11a and the negative copper foil line 11b are disposed in a printed circuit board manufacturing manner during the manufacturing process, and the window 12 is cut out, and the insulating film is formed. 11 film bonding on the metal substrate 10 can be completed.

前述金屬基板10的表面除了設有一層絕緣膜11以外，在相對於窗口12的位置延伸有一共晶焊接部13；該共晶焊接部13頂部裸露於該窗口12，使前述覆晶式LED20底部的負極焊盤21b除了負極銅箔線路11b以外，同時共晶焊接於該共晶焊接部13上。 The surface of the metal substrate 10 is provided with a eutectic soldering portion 13 at a position opposite to the window 12, and a top portion of the eutectic soldering portion 13 is exposed to the window 12 to make the bottom of the flip-chip LED 20 The negative electrode pad 21b is simultaneously eutectic welded to the eutectic solder portion 13 except for the negative electrode copper foil line 11b.

共晶焊接部13的製作方式有三種，其中一種如第一圖所示，是在該絕緣膜11貼合於金屬基板10表面後，於該絕緣膜的窗口12內填充金屬材料13a，使該窗口12內的金屬材料13a與金屬基板10表面共晶焊接後形成裸露於窗口12的共晶焊接部13。此外，所述共晶焊接部13與正極銅箔線路11a之間設有例如白漆等絕緣體14，以防止短路。 The eutectic soldering portion 13 is formed in three ways. One of the first insulating layers 11 is attached to the surface of the metal substrate 10, and the metal material 13a is filled in the window 12 of the insulating film. The metal material 13a in the window 12 is eutectic welded to the surface of the metal substrate 10 to form a eutectic solder portion 13 exposed to the window 12. Further, an insulator 14 such as white lacquer is provided between the eutectic soldering portion 13 and the positive electrode copper foil line 11a to prevent short circuit.

第二種共晶焊接部13的製作方式如第三圖所示，是預先將金屬基板10表面上相對於窗口12的位置遮蔽，然後以腐蝕方式將被遮蔽位置以外的區域去除一固定厚度，使被遮蔽位置形成一平台13b，該平台13b突出於金屬基板10表面而形成共晶焊接部13；當絕緣膜11貼合於金屬基板10表面後，該共晶焊接部13頂面即可穿過窗口12而裸露；同樣地，共晶焊接部13與正極銅箔線路11a之間設置有防止短路的絕緣體14。 As shown in the third figure, the second eutectic soldering portion 13 is shielded from the position of the window 12 on the surface of the metal substrate 10, and then the region other than the shielded position is removed by a fixed thickness by etching. The shielded position is formed into a platform 13b which protrudes from the surface of the metal substrate 10 to form the eutectic soldering portion 13; when the insulating film 11 is attached to the surface of the metal substrate 10, the top surface of the eutectic soldering portion 13 can be worn. Similarly, the window 12 is exposed; similarly, the insulator 14 for preventing short-circuiting is provided between the eutectic soldering portion 13 and the positive electrode copper foil line 11a.

第三種共晶焊接部13的製作方式如第五圖所示，是在金屬基板10相對於窗口12的位置向上沖壓，使金屬基板10在被沖壓部位形成一向上彎折的彎折段13c，該彎折段13c略具向上的彈性，以形成由金屬基板10一體延伸的共晶焊接部13，且其頂面突出於金屬基板10表面，在絕緣膜11貼合於金屬基板10表面後穿過該窗口12而裸露；此實施例方式同樣在共晶焊接部13與正極銅箔線路11a之間設置有防止短路的絕緣體14。 As shown in the fifth figure, the third eutectic soldering portion 13 is stamped upward at a position of the metal substrate 10 with respect to the window 12, so that the metal substrate 10 forms an upwardly bent bent portion 13c at the portion to be punched. The bent portion 13c has a slight upward elasticity to form a eutectic solder portion 13 integrally extending from the metal substrate 10, and a top surface thereof protrudes from the surface of the metal substrate 10, after the insulating film 11 is attached to the surface of the metal substrate 10 The window 12 is exposed through the window 12; in this embodiment, an insulator 14 for preventing short-circuiting is also provided between the eutectic soldering portion 13 and the positive copper foil line 11a.

如第一到第六圖所示，為了方便將覆晶式LED20的正極焊盤21a共晶焊接於正極銅箔線路11a、負極焊盤21b共晶焊接於金屬基板10的負極銅箔線路11b及共晶焊接部13上，在正極銅箔線路11a、負極銅箔線路11b、以及共晶焊接部13上，分別設有至少一焊層22；其中，共晶焊接部13上的焊層22側向延伸覆蓋到負極銅箔線路11b上，之後將覆晶式LED20與金屬基板10進行共晶焊接工序，即可讓各焊層22分別形成共晶結合層22a。 As shown in the first to sixth figures, in order to facilitate the eutectic soldering of the positive electrode pad 21a of the flip-chip LED 20 to the positive copper foil line 11a and the negative electrode pad 21b, the negative electrode copper foil line 11b of the metal substrate 10 is eutectic soldered and The eutectic soldering portion 13 is provided with at least one solder layer 22 on the positive electrode copper foil line 11a, the negative electrode copper foil line 11b, and the eutectic solder portion 13, wherein the solder layer 22 side on the eutectic solder portion 13 The eutectic bonding layer 22a is formed in each of the solder layers 22 by extending the overlying copper foil line 11b and then performing the eutectic soldering process on the flip chip LED 20 and the metal substrate 10.

共晶焊接完成後，覆晶式LED20的正極焊盤21a與正極銅箔線路11a電連接，負極焊盤21b與金屬基板10上的共晶焊接部13及負極銅箔線路11b共晶焊接，使各部位的焊層22形成共晶結合層22a，則正極銅箔線路11a與負極銅箔線路11b分別連接正、負電源後，即可讓覆晶式LED20發光，並且通過各共晶結合層22a快速導熱。 After the eutectic soldering is completed, the positive electrode pad 21a of the flip chip LED 20 is electrically connected to the positive electrode copper foil line 11a, and the negative electrode pad 21b is eutectic soldered to the eutectic solder portion 13 and the negative copper foil line 11b on the metal substrate 10, thereby The solder layer 22 of each portion forms the eutectic bonding layer 22a, and after the positive and negative copper foil lines 11a and the negative copper foil line 11b are respectively connected to the positive and negative power sources, the flip-chip LED 20 can be made to emit light and pass through the eutectic bonding layers 22a. Fast thermal conductivity.

需說明的是，正極銅箔線路11a與負極銅箔線路11b 分別連接正、負電源時，若為多顆覆晶式LED20電路並聯，可以將每一個負極銅箔線路11b都分別連接負極電源，若多顆覆晶式LED20電路串聯，則只須最末端的負極銅箔線路11b連接負極電源，即可完成電路設計，讓覆晶式LED20發光；此外，為改善串聯的缺失，可以在不造成短路漏電為原則下儘量擴大正極銅箔線路11a與負極銅箔線路11b的線路寬度，以增加散熱面積的方式來補償、改善正極銅箔線路11a及負極銅箔線路11b與金屬基板10之間絕緣膜11的高熱阻問題。 It should be noted that when the positive copper foil line 11a and the negative copper foil line 11b are respectively connected to the positive and negative power sources, if the plurality of flip-chip LEDs 20 are connected in parallel, each of the negative copper foil lines 11b may be connected to the negative power source, respectively. If multiple flip-chip LED20 circuits are connected in series, only the negative electrode copper foil line 11b at the end should be connected to the negative power supply, and the circuit design can be completed to make the flip-chip LED 20 emit light; in addition, in order to improve the serial loss, it can be caused In principle, the short circuit leakage is used to maximize the line width of the positive copper foil line 11a and the negative copper foil line 11b, and to compensate and improve the insulation between the positive copper foil line 11a and the negative copper foil line 11b and the metal substrate 10 by increasing the heat dissipation area. The high thermal resistance of the membrane 11 is problematic.

當覆晶式LED20發光時，由於正極焊盤21a與負極焊盤21b是由覆晶式LED20底部一體延伸，而該共晶焊接部13是由金屬基板10上延伸，因此可以通過前述各共晶結合層22a快速導熱，尤其是負極焊盤21b與共晶焊接部13之間的共晶結合層22a，可以在覆晶式LED20與金屬基板10之間形成一共晶結合的導熱路徑，讓覆晶式LED20發光時所產生的廢熱，能夠在覆晶式LED20底部極小的空間裡，無界面阻礙地快速傳導到金屬基板10上以供散熱。 When the flip-chip LED 20 emits light, since the positive electrode pad 21a and the negative electrode pad 21b are integrally extended from the bottom of the flip-chip LED 20, and the eutectic solder portion 13 is extended from the metal substrate 10, each eutectic can be passed through the foregoing The bonding layer 22a rapidly conducts heat, especially the eutectic bonding layer 22a between the negative electrode pad 21b and the eutectic soldering portion 13, and a eutectic heat conduction path can be formed between the flip chip LED 20 and the metal substrate 10 to allow flip chip bonding. The waste heat generated when the LED 20 emits light can be quickly conducted to the metal substrate 10 without any interface hindrance in the space at the bottom of the flip-chip LED 20 for heat dissipation.

第七到第十二圖為本發明的第四到第六實施方式示意圖，與前述實施方式不同的是，該覆晶式LED20的底部一體延伸有三個凸塊21，該三個凸塊21可以配合覆晶式LED20的製造過程一體完成，且彼此間隔排列而分別作為一正極焊盤21a、一負極焊盤21b、以及一導熱焊盤21c；圖示中，該三個凸塊21中作為正極焊盤21a與負極焊盤21b的凸塊設置在覆晶式LED20底部的兩側，而作為導熱焊盤21c的凸塊則設置在該正極焊盤21a與負極焊盤21b之間。 The seventh to twelfth drawings are schematic views of the fourth to sixth embodiments of the present invention. The difference from the foregoing embodiment is that the bottom of the flip-chip LED 20 integrally extends with three bumps 21, and the three bumps 21 can be The manufacturing process of the flip-chip LED 20 is completed integrally, and is arranged to be spaced apart from each other to serve as a positive electrode pad 21a, a negative electrode pad 21b, and a thermal conductive pad 21c. In the figure, the three bumps 21 serve as positive electrodes. The bumps of the pad 21a and the negative electrode pad 21b are disposed on both sides of the bottom of the flip-chip LED 20, and the bumps as the heat-conductive pads 21c are disposed between the positive electrode pad 21a and the negative electrode pad 21b.

其次，金屬基板10上貼合有一層絕緣膜11，該絕緣膜11的表面相對於覆晶式LED20的底部設有：一與正極焊盤21a共晶焊接的正極銅箔線路11a、一與負極焊盤21b共晶焊接的負極銅箔線路11b、以及一相對於導熱焊盤21c的窗口12。 Next, an insulating film 11 is bonded to the metal substrate 10, and the surface of the insulating film 11 is provided with respect to the bottom of the flip-chip LED 20: a positive copper foil line 11a eutectic soldered to the positive electrode pad 21a, and a negative electrode The pad 21b is eutectic soldered negative copper foil line 11b, and a window 12 with respect to the thermally conductive pad 21c.

同樣的，該絕緣膜11是讓金屬基板10與正極銅箔線路11a及負極銅箔線路11b之間絕緣，實施時，該絕緣膜11是由絕緣材料所構成的薄膜，並且在製作過程中製作正極銅箔線路11a、負極銅箔線路11b以及切割出窗口12，然後將絕緣膜11貼合於金屬基板10上即可完成。而金屬基板10在相對於窗口12的位置延伸有一共晶焊接部13裸露於窗口12，使前述覆晶式LED20底部的導熱焊盤21c能夠共晶焊接於該共晶焊接部13上。 Similarly, the insulating film 11 is used to insulate the metal substrate 10 from the positive electrode copper foil line 11a and the negative electrode copper foil line 11b. When implemented, the insulating film 11 is a film made of an insulating material and is fabricated during the manufacturing process. The positive electrode copper foil line 11a, the negative electrode copper foil line 11b, and the dicing window 12 are formed, and then the insulating film 11 is bonded to the metal substrate 10 to complete. On the other hand, the metal substrate 10 extends from the window 12 with a eutectic soldering portion 13 exposed to the window 12, so that the thermal conductive pad 21c at the bottom of the flip-chip LED 20 can be eutectic soldered to the eutectic solder portion 13.

第七到第十二圖所示的第四到第六實施方式中，共晶焊接部13的製作方式如前所述有三種，其中第一種如第七圖所示，是在絕緣膜11的窗口12內填充金屬材料13a與金屬基板10共晶焊接而形成共晶焊接部13；第二種如第九圖所示，以腐蝕方式在金屬基板10表面形成一向上凸起的平台13b，該平台13b突出於表面而形成共晶焊接部13；第三種則如第十一圖所示，在金屬基板10沖壓一向上彎折的彎折段13c，該彎折段13c即形成由金屬基板10一體延伸的共晶焊接部13。此實施例中，該共晶焊接部13與正極銅箔線路11a及負極銅箔線路11b之間分別設有例如白漆等絕緣體14，以防止短路。 In the fourth to sixth embodiments shown in the seventh to twelfth embodiments, the eutectic soldering portion 13 is formed in three ways as described above, and the first one is as shown in the seventh figure, in the insulating film 11 The filling material 13a of the window 12 is eutectic welded with the metal substrate 10 to form a eutectic soldering portion 13; the second type is as shown in FIG. 9 to form an upwardly convex platform 13b on the surface of the metal substrate 10 in an etching manner, The platform 13b protrudes from the surface to form the eutectic soldering portion 13; the third type, as shown in FIG. 11, stamps an upwardly bent bent portion 13c on the metal substrate 10, and the bent portion 13c is formed of metal The eutectic soldering portion 13 in which the substrate 10 is integrally extended. In this embodiment, an insulator 14 such as white lacquer is provided between the eutectic soldering portion 13 and the positive electrode copper foil line 11a and the negative electrode copper foil line 11b to prevent short-circuiting.

如前所述，正極銅箔線路11a、負極銅箔線路11b、以及共晶焊接部13上方分別設有至少一焊層22，以方便將覆晶式LED20共晶焊接於金屬基板10的共晶焊接部13上。共晶焊接後，各焊層22分別形成共晶結合層22a，其中正極銅箔線路11a、負極銅箔線路11b分別與覆晶式LED20的正極焊盤21a、負極焊盤21b電連接，當覆晶式LED20導通電源發光時，產生的廢熱即可通過各共晶結合層22a所形成的共晶結合導熱路徑，在覆晶式LED底部極小的空間裡快速傳導到金屬基板10上以供散熱，尤其是導熱焊盤21c與共晶焊接部13之間的共晶結合層22a，讓導熱焊盤21c與共晶焊接部13之間能夠無界面阻礙地快速導熱。 As described above, at least one solder layer 22 is respectively disposed above the positive copper foil line 11a, the negative copper foil line 11b, and the eutectic soldering portion 13 to facilitate eutectic soldering of the flip-chip LED 20 to the eutectic of the metal substrate 10. On the welded portion 13. After the eutectic soldering, each solder layer 22 forms a eutectic bonding layer 22a, wherein the positive copper foil line 11a and the negative copper foil line 11b are electrically connected to the positive electrode pad 21a and the negative electrode pad 21b of the flip-chip LED 20, respectively. When the crystalline LED 20 is turned on by the power source, the generated waste heat can be quickly transmitted to the metal substrate 10 for heat dissipation in a very small space at the bottom of the flip-chip LED through the eutectic heat conduction path formed by each eutectic bonding layer 22a. In particular, the eutectic bonding layer 22a between the thermally conductive pad 21c and the eutectic soldering portion 13 allows rapid thermal conduction between the thermally conductive pad 21c and the eutectic soldering portion 13 without interfacial blocking.

第十三圖及第十四圖揭示本發明中，覆晶式LED20的另一種實施方式，其與前述覆晶式LED20的底部一體延伸一個導熱焊盤21c的實施方式不同處在於，所述的導熱焊盤21c為兩個或者更多個間隔設置在正極焊盤21a與負極焊盤21b之間，例如圖中所示的導熱焊盤21c為兩個，間隔設置在正極焊盤21a與負極焊盤21b之間。 Thirteenth and fourteenth aspects disclose another embodiment of the flip-chip LED 20 in the present invention, which differs from the embodiment in which the heat-conductive pad 21c is integrally extended with the bottom of the flip-chip LED 20 in that the The thermal conductive pads 21c are disposed between the positive electrode pad 21a and the negative electrode pad 21b at two or more intervals, for example, two heat conductive pads 21c are shown in the figure, and are spaced apart from the positive electrode pad 21a and the negative electrode pad. Between the trays 21b.

第十五到第二十圖為本發明的第七到第九實施方式示意圖，旨在揭示金屬基板10搭配覆晶式LED20具有如第十三圖及第十四圖所示的兩個或者更多個導熱焊盤21c時的實施方式；其中，金屬基板10的共晶焊接部13製作方式如前所述有三種，其中第一種如第十五圖及第十六圖所示，是在絕緣膜11的窗口12內填充金屬材料13a與金屬基板10共晶焊接而形成共晶焊接部13；第二種如第十七圖及第十八圖所示，以腐蝕方式在金屬基板10表面形成一向上凸起的平台13b，該平台13b突出於表面而形成共晶焊接部13；第三種則如第十九圖及第二十圖所示，在金屬基板10沖壓一向上彎折的彎折段13c，該彎折段13c即形成由金屬基板10一體延伸的共晶焊接部13。至於設置白漆等絕緣體14防止短路等結構，皆與前述實施例相同，在此不另贅述。 The fifteenth to twentieth drawings are schematic views of the seventh to ninth embodiments of the present invention, and are intended to disclose that the metal substrate 10 and the flip-chip LED 20 have two or more as shown in the thirteenth and fourteenth drawings. The embodiment of the plurality of thermal conductive pads 21c; wherein the eutectic soldering portion 13 of the metal substrate 10 is formed in three ways as described above, wherein the first one is as shown in the fifteenth and sixteenth The window 12 of the insulating film 11 is filled with the metal material 13a and the metal substrate 10 to form a eutectic soldering portion 13; the second type is shown on the surface of the metal substrate 10 in an etching manner as shown in FIGS. 17 and 18 Forming an upwardly convex platform 13b, the platform 13b protrudes from the surface to form the eutectic soldering portion 13; and the third type is stamped upwardly on the metal substrate 10 as shown in the nineteenth and twentieth diagrams. The bent portion 13c forms a eutectic welded portion 13 integrally extended by the metal substrate 10. The structure in which the insulator 14 such as white paint is provided to prevent short-circuiting and the like is the same as the foregoing embodiment, and will not be further described herein.

值得一提的是，請參閱第二十圖所示，由於第七到第九實施方式中，覆晶式LED20的導熱焊盤21c為兩個或者更多個間隔設置在正極焊盤21a與負極焊盤21b之間，使該等多個導熱焊盤21c彼此之間具有間隙，因此實施時，可以在共晶焊接部13頂部的共晶結合層22a之間、以及多個導熱焊盤21c之間的間隙位置，填充、塗佈錫漿或導熱膏22b，讓共晶焊接部13與每一個導熱焊盤21c之間除了共晶結合層22a快速導熱以外，還可以通過錫漿或導熱膏22b增加彼此之間的導熱面積。 It is to be noted that, as shown in the twentieth embodiment, in the seventh to ninth embodiments, the thermal conductive pads 21c of the flip-chip LED 20 are disposed at two or more intervals on the positive electrode pad 21a and the negative electrode. Between the pads 21b, the plurality of thermally conductive pads 21c are provided with a gap therebetween, so that, when implemented, between the eutectic bonding layers 22a at the top of the eutectic soldering portion 13, and the plurality of thermally conductive pads 21c The gap position between the filling, coating of the solder paste or the thermal paste 22b allows the eutectic bonding portion 13 and each of the thermal conductive pads 21c to pass through the solder paste or the thermal paste 22b in addition to the eutectic bonding layer 22a. Increase the heat transfer area between each other.

以上實施例說明及圖式，僅係舉例說明本發明之較佳實施例，並非以此侷限本發明之範圍；舉凡與本發明之目的、構造、裝置、特徵等近似或相雷同者，均應屬本發明之專利範圍。 The above description of the embodiments and the drawings are merely illustrative of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and should be similar or identical to the objects, structures, devices, features, etc. of the present invention. It belongs to the patent scope of the present invention.

Claims

一種覆晶式LED導熱構造，包括一導熱用的金屬基板以及一共晶焊接在該金屬基板上的覆晶式LED，其中：該覆晶式LED底部一體延伸有二凸塊，該二凸塊彼此間隔排列而分別作為一正極焊盤、以及一負極焊盤；該金屬基板上貼合有一層絕緣膜，該絕緣膜表面相對於覆晶式LED的底部設有一與正極焊盤共晶焊接的正極銅箔線路、一相對於負極焊盤的窗口、以及一與負極焊盤共晶焊接的負極銅箔線路，且該金屬基板在窗口位置延伸有一共晶焊接部，該共晶焊接部頂部裸露於該窗口；以及該正極焊盤與正極銅箔線路之間、以及負極焊盤與該共晶焊接部及負極銅箔線路之間共晶焊接，進而分別在各共晶焊接位置形成共晶結合層，使覆晶式LED與金屬基板之間通過各共晶結合層而形成共晶結合的導熱路徑。 A flip-chip LED heat-conducting structure includes a metal substrate for heat conduction and a flip-chip LED eutectic soldered on the metal substrate, wherein: the bottom of the flip-chip LED integrally extends with two bumps, and the two bumps are mutually Arranging at intervals as a positive electrode pad and a negative electrode pad; the metal substrate is bonded with an insulating film, and the surface of the insulating film is provided with a positive electrode eutectic soldered to the positive electrode pad at the bottom of the flip-chip LED a copper foil line, a window opposite to the negative electrode pad, and a negative electrode copper foil line eutectic soldered to the negative electrode pad, and the metal substrate has a eutectic soldering portion extending at a window position, the top of the eutectic soldering portion being exposed The window; and the eutectic soldering between the positive electrode pad and the positive copper foil line, and between the negative electrode pad and the eutectic soldering portion and the negative copper foil line, and forming a eutectic bonding layer at each eutectic soldering position A heat conduction path in which a eutectic bond is formed between the flip chip LED and the metal substrate through each eutectic bonding layer.

如請求項1所述覆晶式LED導熱構造，其中，所述正極銅箔線路與共晶焊接部上方分別設置有一層焊層，該共晶焊接部上方的焊層側向延伸至負極銅箔線路上方，且各焊層經共晶焊接後分別形成所述的共晶接合層。 The flip-chip LED heat-conducting structure according to claim 1, wherein the positive copper foil line and the eutectic soldering portion are respectively provided with a solder layer, and the solder layer above the eutectic soldering portion extends laterally to the negative copper foil. Above the line, and each solder layer is eutectic soldered to form the eutectic bonding layer.

如請求項1所述覆晶式LED導熱構造，其中，該共晶焊接部與正極銅箔線路之間設有絕緣體。 The flip-chip LED heat conduction structure according to claim 1, wherein an insulator is provided between the eutectic solder portion and the positive copper foil line.

一種覆晶式LED導熱構造，包括一導熱用的金屬基板以及一共晶焊接在該金屬基板上的覆晶式LED，其中：該覆晶式LED底部一體延伸有至少三個凸塊，該至少三個凸塊彼此間隔排列而分別作為一正極焊盤、一負極焊盤、以及至少一導熱焊盤；該金屬基板上貼合有一層絕緣膜，該絕緣膜表面相對於覆晶式LED的底部設有：一與正極焊盤共晶焊接的正極銅箔線路、一與負極焊盤共晶焊接的負極銅箔線路、以及一相對於導熱焊盤的窗口，且該金屬基板在窗口位置延伸有一共晶焊接部；該共晶焊接部頂部裸露於該窗口，以供所述的導熱焊盤共晶焊接於該共晶焊接部上，進而使覆晶式LED底部與金屬基板之間在各共晶焊接位置分別形成一共晶結合層，其中覆晶式LED的至少一導熱焊盤與金屬基板的共晶焊接部之間通過該相對應的共晶結合層而形成一共晶結合的導熱路徑。 A flip-chip LED heat-conducting structure includes a metal substrate for heat conduction and a flip-chip LED eutectic soldered on the metal substrate, wherein: the bottom of the flip-chip LED integrally extends with at least three bumps, the at least three The bumps are spaced apart from each other to serve as a positive electrode pad, a negative electrode pad, and at least one heat conductive pad; the metal substrate is bonded with an insulating film, and the surface of the insulating film is opposite to the bottom of the flip chip LED There is: a positive copper foil line eutectic soldered to the positive electrode pad, a negative copper foil line eutectic soldered to the negative electrode pad, and a window relative to the thermal conductive pad, and the metal substrate extends at a window position a crystal soldering portion; the top of the eutectic soldering portion is exposed in the window for eutectic soldering of the heat conducting pad to the eutectic soldering portion, thereby causing eutectic between the bottom of the flip chip LED and the metal substrate Forming a eutectic bonding layer, wherein at least one thermal conductive pad of the flip-chip LED and the eutectic soldering portion of the metal substrate form a eutectic heat conduction path through the corresponding eutectic bonding layer .

如請求項4所述覆晶式LED導熱構造，其中，該正極焊盤與負極焊盤設置在覆晶式LED底部的兩側，該導熱焊盤設置在該正極焊盤與負極焊盤之間。 The flip-chip LED heat-conducting structure of claim 4, wherein the positive electrode pad and the negative electrode pad are disposed on both sides of a bottom of the flip-chip LED, and the thermal pad is disposed between the positive electrode pad and the negative electrode pad .

如請求項5所述覆晶式LED導熱構造，其中，所述共晶焊接部、正極銅箔線路、以及負極銅箔線路上方分別設置有至少一層共晶焊接用的焊層，各焊層經共晶焊接後，分別形成所述的共晶結合層，且所述共晶焊接部與正極銅箔線路及負極銅箔線路之間分別設有絕緣體。 The flip-chip LED heat-conducting structure according to claim 5, wherein at least one layer of eutectic soldering is disposed on the eutectic soldering portion, the positive copper foil line, and the negative copper foil line, respectively After the eutectic soldering, the eutectic bonding layer is formed, and an insulator is provided between the eutectic soldering portion and the positive copper foil line and the negative copper foil line.

如請求項6所述覆晶式LED導熱構造，其中，該導熱焊盤為多數個彼此間隔設置在正極焊盤與負極焊盤之間，且該共晶焊接部上的共晶結合層之間以及多個導熱焊盤之間的位置填充有錫漿或導熱膏。 The flip-chip LED thermally conductive structure of claim 6, wherein the thermally conductive pads are spaced apart from each other between the positive electrode pad and the negative electrode pad, and between the eutectic bonding layers on the eutectic soldering portion And the position between the plurality of thermal pad is filled with solder paste or thermal paste.

如請求項1至7項中任一項所述覆晶式LED導熱構造，其中，所述共晶焊接部是在該絕緣膜貼合於金屬基板表面後，於該絕緣膜的窗口內填充金屬材料，並且以共晶焊接方式使該窗口內的金屬材料與金屬基板表面共晶焊接所構成。 The flip-chip LED heat-conducting structure according to any one of claims 1 to 7, wherein the eutectic soldering portion is filled with a metal in a window of the insulating film after the insulating film is attached to the surface of the metal substrate. The material is formed by eutectic welding of the metal material in the window and the surface of the metal substrate by eutectic soldering.

如請求項1至7項中任一項所述覆晶式LED導熱構造，其中，所述共晶焊接部是以腐蝕方式將金屬基板表面相對於窗口位置以外的區域去除一固定厚度所形成，使該共晶焊接部頂面突出於金屬基板表面，並且在絕緣膜貼合於金屬基板表面後穿過該窗口而裸露。 The flip-chip LED heat-conducting structure according to any one of claims 1 to 7, wherein the eutectic soldering portion is formed by removing a fixed thickness of the metal substrate surface from a region other than the window position in an etching manner. The top surface of the eutectic soldering portion is protruded from the surface of the metal substrate, and is exposed through the window after the insulating film is attached to the surface of the metal substrate.

如請求項1至7項中任一項所述覆晶式LED導熱構造，其中，所述共晶焊接部是在金屬基板相對於窗口的位置向上沖壓彎折所形成，使該共晶焊接部頂面突出於金屬基板表面，並且穿過該窗口而裸露。 The flip-chip LED heat-conducting structure according to any one of claims 1 to 7, wherein the eutectic soldering portion is formed by stamping and bending upward at a position of the metal substrate relative to the window, and the eutectic soldering portion is formed. The top surface protrudes from the surface of the metal substrate and is exposed through the window.