JP6481575B2 - Light emitting device, projector, and method for manufacturing light emitting device - Google Patents

Light emitting device, projector, and method for manufacturing light emitting device Download PDF

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JP6481575B2
JP6481575B2 JP2015185433A JP2015185433A JP6481575B2 JP 6481575 B2 JP6481575 B2 JP 6481575B2 JP 2015185433 A JP2015185433 A JP 2015185433A JP 2015185433 A JP2015185433 A JP 2015185433A JP 6481575 B2 JP6481575 B2 JP 6481575B2
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light emitting
heat
heat radiating
joining
emitting device
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惣彦 別田
惣彦 別田
岬 上野
岬 上野
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Toshiba Lighting and Technology Corp
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Description

本発明の実施形態は、発光装置、投光器及び発光装置の製造方法に関する。   Embodiments described herein relate generally to a light emitting device, a projector, and a method for manufacturing the light emitting device.

例えば、セラミック基板上に発光ダイオード（ＬＥＤ：Light Emitting Diode）などの半導体発光素子が実装され、半導体発光素子が樹脂で封止された発光装置がある。ＬＥＤは、例えば、セラミックで形成される絶縁層の上に配電層とともに搭載されＣＯＢ（Chip On Board）モジュールを形成する。   For example, there is a light emitting device in which a semiconductor light emitting element such as a light emitting diode (LED) is mounted on a ceramic substrate, and the semiconductor light emitting element is sealed with a resin. The LED is mounted together with a power distribution layer on an insulating layer made of ceramic, for example, to form a COB (Chip On Board) module.

このような発光装置は投光器などに用いられることがあり、その場合、指向性の強い配光特性が要求される。このような配光特性を実現するためには、発光装置の発光面積を小さく抑えることが好ましい。そのため、発光装置における半導体発光素子の高密度化が進んでいる。ここで、高出力かつ高光束発散度を有する半導体発光素子は、発熱量が非常に多く、また発熱密度が高い。さらに、上述したような半導体発光素子の高密度化のため、発光装置には、さらなる発熱量の増大や発熱密度の上昇が懸念される。   Such a light emitting device may be used for a projector or the like. In that case, a light distribution characteristic with strong directivity is required. In order to realize such light distribution characteristics, it is preferable to reduce the light emitting area of the light emitting device. Therefore, the density of the semiconductor light emitting elements in the light emitting device is increasing. Here, a semiconductor light emitting device having a high output and a high luminous flux divergence generates a large amount of heat and has a high heat generation density. Furthermore, due to the higher density of the semiconductor light emitting elements as described above, there is a concern that the light emitting device may further increase the amount of heat generation or increase the heat generation density.

このような発熱量の増大や発熱密度の上昇に対応するために、発光装置の放熱性を向上させることが重要となる。例えば、放熱性を向上させる手段として、放熱フィン（ヒートスプレッダ）を用いる従来技術が提案されている。放熱フィンは、放熱筐体（ヒートシンク）へ放熱グリースを介してネジ止めなどで取り付けられる。ただし、放熱グリースを用いた場合、発光装置の発光の際に、放熱グリースの接触熱抵抗が発生する。ＣＯＢモジュールの出力が例えば１００Ｗ以上の場合、放熱グリースによる熱抵抗が大きくなり、放熱グリースの温度上昇が非常に高くなる。そのため、放熱グリースを用いた発光装置では、高出力の場合、放熱性が低下し、その結果十分な光量を得ることができないおそれがある。   In order to cope with such an increase in the amount of heat generation and an increase in heat generation density, it is important to improve the heat dissipation of the light emitting device. For example, as a means for improving heat dissipation, a conventional technique using a heat dissipation fin (heat spreader) has been proposed. The heat radiating fin is attached to the heat radiating housing (heat sink) by screwing or the like via heat radiating grease. However, when heat dissipation grease is used, contact heat resistance of the heat dissipation grease occurs when the light emitting device emits light. When the output of the COB module is, for example, 100 W or more, the thermal resistance due to the heat dissipating grease increases, and the temperature rise of the heat dissipating grease becomes very high. Therefore, in the light emitting device using the heat radiation grease, the heat radiation performance is lowered at a high output, and as a result, there is a possibility that a sufficient amount of light cannot be obtained.

そこで、ヒートシンク上に絶縁層を介して直接チップ及び蛍光体などの発光部を形成する方法や、蛍光体を有するＣＯＢモジュールをヒートシンクに直接金属接合する方法などがある。これにより、熱抵抗の大幅な低減を図ることができ、発光素子に投入可能な電力を大幅に増加させ、その結果十分な光量を得ることができる。かかる発光装置は、高い放熱性に加え、高い信頼性が求められる。   Therefore, there are a method of directly forming a light emitting part such as a chip and a phosphor on the heat sink via an insulating layer, a method of directly bonding a COB module having a phosphor to the heat sink, and the like. As a result, the thermal resistance can be greatly reduced, and the power that can be input to the light emitting element can be greatly increased. As a result, a sufficient amount of light can be obtained. Such a light emitting device is required to have high reliability in addition to high heat dissipation.

特開２０１２−８４７３３号公報JP 2012-84733 A

本発明の実施形態は、高い信頼性を有する発光装置、投光器及び発光装置の製造方法を提供する。   Embodiments of the present invention provide a light emitting device, a projector, and a method for manufacturing the light emitting device having high reliability.

本発明の実施形態の一例によれば、発光装置は、半導体発光素子と、配線パターンが形成された実装面を有する絶縁性基板と、前記実装面において、前記半導体発光素子及び前記絶縁性基板を接合する第１の接合部と、放熱面と、前記放熱面の反対面と、前記放熱面及び前記放熱面の反対面の間を通過するヒートパイプを収容する収容部とを有する放熱筐体と、前記実装面の反対面及び前記放熱面の反対面において、前記絶縁性基板及び前記放熱筐体を接合する第２の接合部と、放熱フィンと、前記収容部に収容された際に前記放熱筐体から延伸する延伸部分が前記放熱フィンと接合するヒートパイプと、前記放熱面において前記放熱筐体及び前記放熱フィンを接合し、前記収容部において前記放熱筐体及び前記ヒートパイプを接合し、前記延伸部分において前記放熱フィン及び前記ヒートパイプを接合する、前記第１の接合部、前記第２の接合部、前記絶縁性基板及び前記配線パターンよりも融点が低い第３の接合部と、を具備する。   According to an exemplary embodiment of the present invention, a light emitting device includes a semiconductor light emitting element, an insulating substrate having a mounting surface on which a wiring pattern is formed, and the semiconductor light emitting element and the insulating substrate on the mounting surface. A heat-dissipating housing having a first joint to be joined, a heat-dissipating surface, an opposite surface of the heat-dissipating surface, and a housing part that accommodates a heat pipe passing between the heat-dissipating surface and the opposite surface of the heat-dissipating surface; In the opposite surface of the mounting surface and the opposite surface of the heat dissipating surface, the heat dissipating when the insulating substrate and the heat dissipating housing are joined, the heat dissipating fin, and the heat dissipating when the housing unit accommodates the heat dissipating fin. A heat pipe that extends from the housing is joined to the heat radiating fin, and the heat radiating surface joins the heat radiating housing and the heat radiating fin, and the housing portion joins the heat radiating housing and the heat pipe, Above A third joint having a melting point lower than that of the first joint, the second joint, the insulating substrate, and the wiring pattern, which joins the radiating fin and the heat pipe at an extended portion; To do.

本発明の実施形態の一例によれば、高い信頼性を有する発光装置、投光器及び発光装置の製造方法が提供される。   According to an example of an embodiment of the present invention, a highly reliable light emitting device, projector, and method for manufacturing the light emitting device are provided.

図１は、実施形態に係る発光装置を例示する上面図である。FIG. 1 is a top view illustrating a light emitting device according to an embodiment. 図２は、実施形態に係る発光装置を例示するＡ１−Ａ２断面図である。FIG. 2 is a cross-sectional view of A1-A2 illustrating the light emitting device according to the embodiment. 図３は、実施形態に係る発光装置を例示するＢ１−Ｂ２断面図である。FIG. 3 is a B1-B2 cross-sectional view illustrating the light emitting device according to the embodiment. 図４は、実施形態に係る発光装置の製造手順を例示する模式図である。FIG. 4 is a schematic view illustrating the manufacturing procedure of the light emitting device according to the embodiment. 図５は、実施形態に係る発光装置の製造手順を例示するフローチャートである。FIG. 5 is a flowchart illustrating the manufacturing procedure of the light emitting device according to the embodiment.

以下、図面を参照して、実施形態に係る発光装置、投光器及び発光装置の製造方法を説明する。実施形態において同一の機能を有する構成には同一の符号を付し、重複する説明は省略する。なお、以下の実施形態で説明する発光装置、投光器及び発光装置の製造方法は、一例を示すに過ぎず、実施形態を限定するものではない。以下の実施形態及び変形例は、矛盾しない範囲内で適宜組みあわせてもよい。   Hereinafter, a light emitting device, a projector, and a method for manufacturing the light emitting device according to the embodiment will be described with reference to the drawings. In the embodiment, configurations having the same functions are denoted by the same reference numerals, and redundant description is omitted. Note that the light-emitting device, the projector, and the method for manufacturing the light-emitting device described in the following embodiments are merely examples, and do not limit the embodiments. The following embodiments and modifications may be combined as appropriate within a consistent range.

以下の第１の実施形態に係る発光装置は、半導体発光素子と、配線パターンが形成された実装面を有する絶縁性基板と、前記実装面において、前記半導体発光素子及び前記絶縁性基板を接合する第１の接合部と、放熱面と、前記放熱面の反対面と、前記放熱面及び前記放熱面の反対面の間を通過するヒートパイプを収容する収容部とを有する放熱筐体と、前記実装面の反対面及び前記放熱面の反対面において、前記絶縁性基板及び前記放熱筐体を接合する第２の接合部と、放熱フィンと、前記収容部に収容された際に前記放熱筐体から延伸する延伸部分が前記放熱フィンと接合するヒートパイプと、前記放熱面において前記放熱筐体及び前記放熱フィンを接合し、前記収容部において前記放熱筐体及び前記ヒートパイプを接合し、前記延伸部分において前記放熱フィン及び前記ヒートパイプを接合する、前記第１の接合部、前記第２の接合部、前記絶縁性基板及び前記配線パターンよりも融点が低い第３の接合部と、を具備する。   A light emitting device according to a first embodiment below includes a semiconductor light emitting element, an insulating substrate having a mounting surface on which a wiring pattern is formed, and the semiconductor light emitting element and the insulating substrate are bonded to each other on the mounting surface. A heat-dissipating housing having a first joint, a heat-dissipating surface, an opposite surface of the heat-dissipating surface, and a housing portion that accommodates a heat pipe passing between the heat-dissipating surface and the opposite surface of the heat-dissipating surface; On the opposite surface of the mounting surface and the opposite surface of the heat radiating surface, the heat sink case when the insulating substrate and the heat radiating case are joined to each other, the second finned portion, the heat radiating fin, and the housing portion. The extending portion extending from the heat pipe that joins the heat radiating fin, the heat radiating case and the heat radiating fin are bonded to the heat radiating surface, the heat radiating case and the heat pipe are bonded to the housing portion, and the drawing Part The joining radiating fins and the heat pipe, the first joint portion, the second joint portion comprises a a low melting point third joint portion than the insulating substrate and the wiring pattern in.

また、以下の第２の実施形態に係る発光装置は、前記半導体発光素子及び前記絶縁性基板が前記第１の接合部により接合され、前記絶縁性基板及び前記放熱筐体が前記第２の接合部により接合された後に、前記放熱筐体及び前記放熱フィンと、前記放熱筐体及び前記ヒートパイプと、前記放熱フィン及び前記ヒートパイプとのそれぞれが前記第３の接合部により接合される。   Further, in the light emitting device according to the second embodiment below, the semiconductor light emitting element and the insulating substrate are joined by the first joining portion, and the insulating substrate and the heat dissipation housing are joined by the second joining. After being joined by the portion, each of the heat radiating housing and the heat radiating fin, the heat radiating housing and the heat pipe, and the heat radiating fin and the heat pipe is joined by the third joint portion.

また、以下の第３の実施形態に係る投光器は、投光器部材と、前記投光器部材に取り付けられた上記の第１の実施形態又は第２の実施形態に係る発光装置と、を具備する。   A projector according to a third embodiment below includes a projector member and the light emitting device according to the first embodiment or the second embodiment attached to the projector member.

また、以下の第４の実施形態に係る発光装置の製造方法は、上記の第１の実施形態又は〜第２の実施形態に係る発光装置の製造方法であって、前記半導体発光素子及び前記絶縁性基板を前記第１の接合部により接合する第１の接合工程と、前記絶縁性基板及び前記放熱筐体を前記第２の接合部により接合する第２の接合工程と、前記第１の接合工程及び前記第２の接合工程の後に、前記放熱筐体及び前記放熱フィンと、前記放熱筐体及び前記ヒートパイプと、前記放熱フィン及び前記ヒートパイプとのそれぞれを前記第３の接合部により接合する第３の接合工程と、を具備する。   Further, a light emitting device manufacturing method according to a fourth embodiment described below is the light emitting device manufacturing method according to the first embodiment or the second embodiment described above, and includes the semiconductor light emitting element and the insulation. A first bonding step of bonding a conductive substrate by the first bonding portion, a second bonding step of bonding the insulating substrate and the heat radiating housing by the second bonding portion, and the first bonding. After the step and the second joining step, the heat radiating housing and the heat radiating fin, the heat radiating housing and the heat pipe, and the heat radiating fin and the heat pipe are joined by the third joint portion. A third joining step.

［発光装置の構成］
図１は、実施形態に係る発光装置を例示する上面図である。また、図２は、図１に示すＡ１−Ａ２ラインに沿って実施形態に係る発光装置を例示するＡ１−Ａ２断面図である。また、図３は、図１に示すＢ１−Ｂ２ラインに沿って実施形態に係る発光装置を例示するＢ１−Ｂ２断面図である。 [Configuration of light emitting device]
FIG. 1 is a top view illustrating a light emitting device according to an embodiment. 2 is a cross-sectional view taken along the line A1-A2 illustrating the light emitting device according to the embodiment along the line A1-A2 shown in FIG. 3 is a B1-B2 cross-sectional view illustrating the light emitting device according to the embodiment along the line B1-B2 shown in FIG.

図１〜図３に示すように、本実施形態に係る発光装置１１０は、発光部４０と、放熱部材５０と、を含む。放熱部材５０の上に、発光部４０が設けられる。また、図２及び図３
に示すように、放熱部材５０と発光部４０との間に、接合部８０が設けられる。すなわち、放熱部材５０の上に接合部８０が設けられ、接合部８０の上に、発光部４０が設けられる。この例では、放熱部材５０の上に１つの発光部４０が設けられる。後述するように、１つの放熱部材５０の上に、複数の発光部４０が設けられてもよい。 As shown in FIGS. 1 to 3, the light emitting device 110 according to the present embodiment includes a light emitting unit 40 and a heat radiating member 50. A light emitting unit 40 is provided on the heat dissipation member 50. 2 and 3
As shown in FIG. 5, the joint 80 is provided between the heat dissipation member 50 and the light emitting unit 40. That is, the joining portion 80 is provided on the heat radiating member 50, and the light emitting portion 40 is provided on the joining portion 80. In this example, one light emitting unit 40 is provided on the heat dissipation member 50. As will be described later, a plurality of light emitting units 40 may be provided on one heat radiating member 50.

本願明細書において、上に設けられる状態は、直接的に上に設けられる状態の他に、間に別の要素が挿入される状態も含む。   In the present specification, the state provided above includes not only the state provided directly above but also the state where another element is inserted therebetween.

図１〜図３において、放熱部材５０から発光部４０に向かう方向を積層方向とする。本願明細書において、積層される状態は、直接接して重ねられる状態の他に、間に別の要素が挿入されて重ねられる状態も含む。図１〜図３において、積層方向をＺ軸方向とする。Ｚ軸方向に対して垂直な１つの軸をＸ軸方向とする。Ｚ軸方向に対して垂直で、Ｘ軸方向に対して垂直な方向をＹ軸方向とする。   In FIG. 1 to FIG. 3, the direction from the heat radiating member 50 toward the light emitting unit 40 is a stacking direction. In the present specification, the state of being stacked includes not only the state of being stacked in direct contact but also the state of being stacked with another element inserted therebetween. 1 to 3, the stacking direction is the Z-axis direction. One axis perpendicular to the Z-axis direction is taken as the X-axis direction. A direction perpendicular to the Z-axis direction and perpendicular to the X-axis direction is taken as a Y-axis direction.

放熱部材５０は、例えば直方体状である。放熱部材５０の主面は、例えば、Ｘ−Ｙ平面に対して実質的に平行である。放熱部材５０の平面形状は、例えば矩形である。放熱部材５０は、例えば、第１〜第４辺５５ａ〜５５ｄを有する。第２辺５５ｂは、第１辺５５ａから離間する。第３辺５５ｃは、第１辺５５ａの一端と、第２辺５５ｂの一端と、を接続する。第４辺５５ｄは、第３辺５５ｃと離間し、第１辺５５ａの他端と、第２辺５５ｂの他端と、を接続する。放熱部材５０の平面形状のコーナー部は、曲線状でもよい。放熱筐体５１の平面形状は、矩形でなくても良く、任意である。   The heat radiating member 50 has, for example, a rectangular parallelepiped shape. The main surface of the heat radiating member 50 is substantially parallel to the XY plane, for example. The planar shape of the heat dissipation member 50 is, for example, a rectangle. The heat radiating member 50 has, for example, first to fourth sides 55a to 55d. The second side 55b is separated from the first side 55a. The third side 55c connects one end of the first side 55a and one end of the second side 55b. The fourth side 55d is separated from the third side 55c, and connects the other end of the first side 55a and the other end of the second side 55b. The planar corner portion of the heat radiating member 50 may be curved. The planar shape of the heat radiating casing 51 may not be a rectangle and is arbitrary.

なお、放熱筐体５１には、例えば、銅やアルミニウムなどの金属などにニッケルメッキを施したものが用いられる。   Note that the heat radiating casing 51 is made of, for example, a metal such as copper or aluminum plated with nickel.

図２及び図３に示すように、放熱部材５０は、放熱筐体５１と、ヒートパイプ６０と、複数の放熱フィン７０と、を含む。放熱筐体５１には、発光部４０が設けられる面とは反対側の放熱面に、複数の放熱フィン７０それぞれを取り付けるための複数の凹部５２が設けられる。なお、放熱フィン７０及び凹部５２の数は、放熱部材５０の放熱能力の設計に応じて適宜変更可能である。   As shown in FIGS. 2 and 3, the heat radiating member 50 includes a heat radiating casing 51, a heat pipe 60, and a plurality of heat radiating fins 70. The heat radiating housing 51 is provided with a plurality of recesses 52 for attaching each of the plurality of heat radiating fins 70 to the heat radiating surface opposite to the surface on which the light emitting unit 40 is provided. Note that the number of the heat radiation fins 70 and the recesses 52 can be appropriately changed according to the design of the heat radiation capability of the heat radiation member 50.

放熱フィン７０には、ヒートパイプ６０を貫通させるための貫通孔７２がそれぞれ設けられている。放熱フィン７０それぞれは、その一端辺が放熱筐体５１の各凹部５２に嵌入され、凹部５２に嵌入された部分が接合部７３により放熱筐体５１と接合される。   The radiating fins 70 are provided with through holes 72 for allowing the heat pipe 60 to pass therethrough. Each of the heat radiating fins 70 is fitted into each concave portion 52 of the heat radiating housing 51 at one end side, and the portion fitted into the concave portion 52 is joined to the heat radiating housing 51 by the joint portion 73.

また、放熱筐体５１には、ヒートパイプ６０を収容するための収容部５３が、Ｘ−Ｙ平面と平行に、放熱筐体５１の厚み方向（Ｚ軸方向）の中心付近かつ発光部４０のＺ軸方向直下の領域を通過するように設けられる。収容部５３は、例えばヒートパイプ６０を、放熱筐体５１の一端面から他端面へ貫通させる貫通孔である。   In addition, the heat radiating housing 51 includes a housing portion 53 for housing the heat pipe 60 in the vicinity of the center of the heat radiating housing 51 in the thickness direction (Z-axis direction) and parallel to the XY plane. It is provided so as to pass through a region immediately below the Z-axis direction. The accommodating part 53 is a through-hole which penetrates the heat pipe 60 from the one end surface of the heat dissipation housing 51 to the other end surface, for example.

ヒートパイプ６０は、銅などの熱伝導性が高い材料により形成される。ヒートパイプ６０は、パイプ内部に揮発性の液体が封入されており、パイプ内壁のウィックという毛細管構造により液体の蒸発及び凝縮のサイクルを発生させて熱交換を行う。図２及び図３に示すように、ヒートパイプ６０は、その一部が放熱筐体５１の収容部５３に収容され、収容部５３に収容された部分が接合部６１により放熱筐体５１と接合される。接合部６１は、例えば融点が１３０〜１４０℃程度のＳｎ−Ｂｉ（すず−ビスマス）はんだなどの接合部材（以下、第３の接合部材と呼ぶ）である。   The heat pipe 60 is formed of a material having high thermal conductivity such as copper. In the heat pipe 60, a volatile liquid is sealed inside the pipe, and heat exchange is performed by generating a liquid evaporation and condensation cycle by a capillary structure called a wick on the inner wall of the pipe. As shown in FIGS. 2 and 3, a part of the heat pipe 60 is accommodated in the accommodating portion 53 of the heat radiating casing 51, and the portion accommodated in the accommodating portion 53 is joined to the radiating casing 51 by the joining portion 61. Is done. The joining portion 61 is a joining member (hereinafter, referred to as a third joining member) such as Sn—Bi (tin-bismuth) solder having a melting point of about 130 to 140 ° C., for example.

また、図２及び図３に示すように、ヒートパイプ６０は、その一部が収容部５３に収容された際に放熱筐体５１から外方に延伸する延伸部分が放熱フィン７０側へ取り回され、放熱フィン７０の各貫通孔７２を通過する。そして、ヒートパイプ６０は、貫通孔７２を通過する部分が接合部７１により放熱フィン７０と接合される。接合部７１は、例えば融点が１３０〜１４０℃程度のＳｎ−Ｂｉ（すず−ビスマス）はんだなどの接合部材（第３の接合部材）である。   As shown in FIGS. 2 and 3, the heat pipe 60 has an extended portion extending outward from the heat radiating casing 51 when part of the heat pipe 60 is accommodated in the accommodating portion 53. And passes through the through holes 72 of the heat radiating fins 70. The portion of the heat pipe 60 that passes through the through hole 72 is joined to the radiating fin 70 by the joining portion 71. The joining portion 71 is a joining member (third joining member) such as Sn—Bi (tin-bismuth) solder having a melting point of about 130 to 140 ° C., for example.

このようにヒートパイプ６０を放熱筐体５１及び放熱フィン７０と接合することにより、発光部４０から発せられ接合部８０を介して放熱部材５０へ伝導した熱を、ヒートパイプ６０を介して放熱フィン７０の放熱部材５０からより離れた部分へ移動させる。よって、発光部４０による発熱を効率的に放熱することができる。   By joining the heat pipe 60 to the heat radiating casing 51 and the heat radiating fin 70 in this way, the heat emitted from the light emitting part 40 and conducted to the heat radiating member 50 through the joint part 80 is radiated through the heat pipe 60. 70 is moved away from the heat radiating member 50. Therefore, the heat generated by the light emitting unit 40 can be efficiently radiated.

なお、図２では、ヒートパイプ６０は、放熱筐体５１及び放熱フィン７０を貫通する円環状で示している。しかし、ヒートパイプ６０は、円環状に限らず、例えば発熱筐体５１の収容部５３の内部において両端点を有する半環状、あるいは、例えばいずれかの放熱フィン７０との接合部分又は接合部分近傍を両端点とする半環状であってもよい。また、図２では、１つのヒートパイプ６０を示すが、同様のヒートパイプ６０が複数あってもよい。また、ヒートパイプ６０の放熱筐体５１から外方に延伸する延伸部分は、複数に枝分かれする形状であってもよい。   In FIG. 2, the heat pipe 60 is shown in an annular shape that penetrates the heat radiating casing 51 and the heat radiating fins 70. However, the heat pipe 60 is not limited to an annular shape, for example, a semi-annular shape having both end points inside the accommodating portion 53 of the heat generating housing 51, or, for example, a joining portion with any one of the radiation fins 70 or the vicinity of the joining portion. It may be semi-circular with both end points. 2 shows one heat pipe 60, there may be a plurality of similar heat pipes 60. Further, the extending portion of the heat pipe 60 that extends outward from the heat radiating casing 51 may have a shape that branches into a plurality of portions.

発光部４０は、光を出射する。それと同時に、発光部４０は熱を発生する。接合部８０は、発光部４０で発生した熱を、放熱部材５０に効率良く伝導する。接合部８０には、例えば、融点が２１０〜２２０℃程度のＳｎ−Ａｇ（すず−銀）はんだや銀ナノペーストといった導電性接着剤などの接合部材（以下、第２の接合部材と呼ぶ）が用いられる。接合部８０は、発光部４０と放熱部材５０とを接合する。   The light emitting unit 40 emits light. At the same time, the light emitting unit 40 generates heat. The joining portion 80 efficiently conducts heat generated in the light emitting portion 40 to the heat radiating member 50. For example, the bonding portion 80 includes a bonding member (hereinafter, referred to as a second bonding member) such as a conductive adhesive such as Sn-Ag (tin-silver) solder or silver nanopaste having a melting point of about 210 to 220 ° C. Used. The joining part 80 joins the light emitting part 40 and the heat dissipation member 50.

発光部４０は、実装基板部１５と、発光素子部３５と、を含む。実装基板部１５は、絶縁性基板１０と、第１金属層１１と、第２金属層１２と、を含む。   The light emitting unit 40 includes a mounting substrate unit 15 and a light emitting element unit 35. The mounting substrate unit 15 includes an insulating substrate 10, a first metal layer 11, and a second metal layer 12.

絶縁性基板１０は、第１主面１０ａと、第２主面１０ｂと、を有する。第２主面１０ｂは、第１主面１０ａとは反対側の面である。放熱部材５０は、絶縁性基板１０の第２主面１０ｂと対向している。換言すると、第２主面１０ｂは、放熱部材５０側の面である。   The insulating substrate 10 has a first main surface 10a and a second main surface 10b. The 2nd main surface 10b is a surface on the opposite side to the 1st main surface 10a. The heat dissipating member 50 faces the second main surface 10b of the insulating substrate 10. In other words, the second main surface 10b is a surface on the heat radiating member 50 side.

本願明細書において、対向している状態は、直接面している状態に加え、間に別の要素が挿入されている状態も含む。   In the present specification, the state of facing each other includes not only the state of directly facing but also the state of inserting another element therebetween.

第１主面１０ａは、実装領域１６を含む。例えば、実装領域１６は、第１主面１０ａの外縁１０ｒから離間している。この例では、実装領域１６は、第１主面１０ａの中央部分に設けられる。第１主面１０ａは、周辺領域１７をさらに含む。周辺領域１７は、実装領域１６の周りに設けられる。   The first major surface 10 a includes a mounting area 16. For example, the mounting region 16 is separated from the outer edge 10r of the first main surface 10a. In this example, the mounting region 16 is provided in the central portion of the first main surface 10a. The first major surface 10a further includes a peripheral region 17. The peripheral area 17 is provided around the mounting area 16.

絶縁性基板１０は、絶縁性を有する基板である。絶縁性基板１０には、例えば、セラミック基板などが用いられる。例えば、絶縁性基板１０は、アルミナを含む。絶縁性基板１０には、例えばアルミナを主成分とするセラミック基板などが用いられる。絶縁性基板１０は、表面の被膜の融点が、１３０〜１４０℃程度のＳｎ−Ｂｉ（すず−ビスマス）はんだなどの接合部材（第３の接合部材）よりも高い。   The insulating substrate 10 is a substrate having an insulating property. For example, a ceramic substrate or the like is used as the insulating substrate 10. For example, the insulating substrate 10 includes alumina. As the insulating substrate 10, for example, a ceramic substrate mainly composed of alumina is used. The insulating substrate 10 has a melting point of the coating on the surface higher than that of a joining member (third joining member) such as Sn-Bi (tin-bismuth) solder having a temperature of about 130 to 140 ° C.

第１金属層１１は、第１主面１０ａ上に設けられる。第１金属層１１は、銅などの高い伝導性を有する材料で形成される。第１金属層１１は、融点が１３０〜１４０℃程度のＳｎ−Ｂｉ（すず−ビスマス）はんだなどの接合部材（第３の接合部材）よりも高い融点である。   The first metal layer 11 is provided on the first major surface 10a. The first metal layer 11 is formed of a material having high conductivity such as copper. The first metal layer 11 has a melting point higher than that of a bonding member (third bonding member) such as Sn—Bi (tin-bismuth) solder having a melting point of about 130 to 140 ° C.

第１金属層１１は、複数の実装パターン１１ｐを含む。複数の実装パターン１１ｐは、実装領域１６に設けられる。複数の実装パターン１１ｐの少なくともいずれか２つ以上は、互いに離間している。例えば、複数の実装パターン１１ｐの少なくともいずれかは、島状である。複数の実装パターン１１ｐの２つは、互いに独立している。複数の実装パターン１１ｐは、例えば、第１実装パターン１１ｐａ及び第２実装パターン１１ｐｂなどを含む。   The first metal layer 11 includes a plurality of mounting patterns 11p. The plurality of mounting patterns 11 p are provided in the mounting area 16. At least any two of the plurality of mounting patterns 11p are separated from each other. For example, at least one of the plurality of mounting patterns 11p has an island shape. Two of the plurality of mounting patterns 11p are independent of each other. The plurality of mounting patterns 11p include, for example, a first mounting pattern 11pa and a second mounting pattern 11pb.

複数の実装パターン１１ｐのそれぞれは、例えば、第１実装部分１１ａと、第２実装部分１１ｂと、を含む。この例では、実装パターン１１ｐは、第３実装部分１１ｃをさらに含む。第３実装部分１１ｃは、第１実装部分１１ａと第２実装部分１１ｂとの間に設けられ、第１実装部分１１ａと第２実装部分１１ｂとを繋ぐ。   Each of the plurality of mounting patterns 11p includes, for example, a first mounting portion 11a and a second mounting portion 11b. In this example, the mounting pattern 11p further includes a third mounting portion 11c. The third mounting portion 11c is provided between the first mounting portion 11a and the second mounting portion 11b, and connects the first mounting portion 11a and the second mounting portion 11b.

第１金属層１１は、複数の実装パターン１１ｐを互いに接続する接続部４４をさらに含んでもよい。この例では、第１金属層１１は、第１コネクタ用電極部４５ｅと第２コネクタ用電極部４６ｅとをさらに含む。第１コネクタ用電極部４５ｅは、複数の実装パターン１１ｐの１つと電気的に接続される。第２コネクタ用電極部４６ｅは、複数の実装パターン１１ｐのその１つとは別の１つと電気的に接続される。後述するように、１つの実装パターン１１ｐの一部の上に半導体発光素子が配置される。この半導体発光素子により、第１コネクタ用電極部４５ｅが、実装パターン１１ｐの１つと電気的に接続される。さらに、別の１つの実装パターン１１ｐの一部の上に半導体発光素子が配置される。この半導体発光素子により、第２コネクタ用電極部４６ｅが、別の１つの実装パターン１１ｐの１つと電気的に接続される。   The first metal layer 11 may further include a connection portion 44 that connects the plurality of mounting patterns 11p to each other. In this example, the first metal layer 11 further includes a first connector electrode portion 45e and a second connector electrode portion 46e. The first connector electrode portion 45e is electrically connected to one of the plurality of mounting patterns 11p. The second connector electrode portion 46e is electrically connected to one of the plurality of mounting patterns 11p other than the one. As will be described later, a semiconductor light emitting element is disposed on a part of one mounting pattern 11p. By this semiconductor light emitting element, the first connector electrode portion 45e is electrically connected to one of the mounting patterns 11p. Further, a semiconductor light emitting element is disposed on a part of another mounting pattern 11p. By this semiconductor light emitting element, the second connector electrode portion 46e is electrically connected to one of the other mounting patterns 11p.

この例では、発光部４０は、第１主面１０ａ上に設けられた第１コネクタ４５と、第２コネクタ４６と、をさらに含む。第１コネクタ４５は、第１コネクタ用電極部４５ｅと電気的に接続される。第２コネクタ４６は、第２コネクタ用電極部４６ｅと電気的に接続される。この例では、第１コネクタ用電極部４５ｅの上に、第１コネクタ４５が設けられている。第２コネクタ用電極部４６ｅの上に、第２コネクタ４６が設けられている。第１コネクタ４５と、第２コネクタ４６と、の間に発光素子部３５が配置される。これらのコネクタを介して、発光部４０に電力が供給される。   In this example, the light emitting unit 40 further includes a first connector 45 and a second connector 46 provided on the first main surface 10a. The first connector 45 is electrically connected to the first connector electrode portion 45e. The second connector 46 is electrically connected to the second connector electrode portion 46e. In this example, the first connector 45 is provided on the first connector electrode portion 45e. A second connector 46 is provided on the second connector electrode portion 46e. The light emitting element portion 35 is disposed between the first connector 45 and the second connector 46. Electric power is supplied to the light emitting unit 40 via these connectors.

第２金属層１２は、第２主面１０ｂ上に設けられる。第２金属層１２は、銅などの高い伝導性を有する材料で形成される。第２金属層１２は、融点が１３０〜１４０℃程度のＳｎ−Ｂｉ（すず−ビスマス）はんだなどの接合部材（第３の接合部材）よりも高い融点である。例えば、融点が２１０〜２３０℃のＳｎＡｇＣｕ系の半田を使用できる。第２金属層１２は、第１金属層１１と電気的に絶縁されている。第２金属層１２の少なくとも一部は、Ｘ−Ｙ平面（第１主面１０ａに対して平行な第１平面）に投影したときに、実装領域１６と重なる。   The second metal layer 12 is provided on the second major surface 10b. The second metal layer 12 is formed of a material having high conductivity such as copper. The second metal layer 12 has a melting point higher than that of a bonding member (third bonding member) such as Sn—Bi (tin-bismuth) solder having a melting point of about 130 to 140 ° C. For example, SnAgCu solder having a melting point of 210 to 230 ° C. can be used. The second metal layer 12 is electrically insulated from the first metal layer 11. At least a part of the second metal layer 12 overlaps the mounting region 16 when projected onto the XY plane (a first plane parallel to the first major surface 10a).

このように、絶縁性基板１０の上面（第１主面１０ａ）に第１金属層１１が設けられ、絶縁性基板１０の下面（第２主面１０ｂ）に第２金属層１２が設けられる。   Thus, the first metal layer 11 is provided on the upper surface (first main surface 10a) of the insulating substrate 10, and the second metal layer 12 is provided on the lower surface (second main surface 10b) of the insulating substrate 10.

発光素子部３５は、絶縁性基板１０の第１主面１０ａ上に設けられる。発光素子部３５は、複数の半導体発光素子２０と、波長変換層３１と、を含む。   The light emitting element portion 35 is provided on the first main surface 10 a of the insulating substrate 10. The light emitting element unit 35 includes a plurality of semiconductor light emitting elements 20 and a wavelength conversion layer 31.

複数の半導体発光素子２０は、第１主面１０ａ上に設けられる。図２に示すように、各半導体発光素子２０は、第１主面１０ａ上において、絶縁性基板１０に実装される。   The plurality of semiconductor light emitting elements 20 are provided on the first major surface 10a. As shown in FIG. 2, each semiconductor light emitting element 20 is mounted on the insulating substrate 10 on the first main surface 10a.

複数の半導体発光素子２０のそれぞれは、光を放出する。半導体発光素子２０は、例えば窒化物半導体を含む。半導体発光素子２０は、例えば、ＩｎｙＡｌｚＧａ１−ｘ−ｙＮ（０≦ｘ≦１，０≦ｙ≦１，ｘ＋ｙ≦１）を含む。ただし、本実施形態において、半導体発光素子は任意である。 Each of the plurality of semiconductor light emitting elements 20 emits light. The semiconductor light emitting element 20 includes, for example, a nitride semiconductor. The semiconductor light emitting element 20 includes, for example, In y Al z Ga 1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1). However, in this embodiment, the semiconductor light emitting element is arbitrary.

複数の半導体発光素子２０は、例えば、第１半導体発光素子２０ａ及び第２半導体発光素子２０ｂなどを含む。複数の半導体発光素子２０のそれぞれは、複数の実装パターン１１ｐのうちのいずれかの実装パターン１１ｐと、複数の実装パターン１１ｐのうちの上記のいずれかの隣の別の実装パターン１１ｐと、電気的に接続されている。   The plurality of semiconductor light emitting elements 20 include, for example, a first semiconductor light emitting element 20a and a second semiconductor light emitting element 20b. Each of the plurality of semiconductor light emitting elements 20 is electrically connected to any one of the plurality of mounting patterns 11p and another mounting pattern 11p adjacent to any one of the plurality of mounting patterns 11p. It is connected to the.

例えば、第１半導体発光素子２０ａは、複数の実装パターン１１ｐのうちの第１実装パターン１１ｐａと、第２実装パターン１１ｐｂと、電気的に接続されている。第２実装パターン１１ｐｂは、第１実装パターン１１ｐａの隣の別の実装パターン１１ｐに相当する。   For example, the first semiconductor light emitting element 20a is electrically connected to the first mounting pattern 11pa and the second mounting pattern 11pb among the plurality of mounting patterns 11p. The second mounting pattern 11pb corresponds to another mounting pattern 11p adjacent to the first mounting pattern 11pa.

例えば、複数の半導体発光素子２０のそれぞれは、第１導電形の第１半導体層２１と、第２導電形の第２半導体層２２と、発光層２３と、を含む。例えば、第１導電形はｎ形であり、第２導電形はｐ形である。第１導電形がｐ形であり、第２導電形がｎ形でもよい。   For example, each of the plurality of semiconductor light emitting elements 20 includes a first semiconductor layer 21 having a first conductivity type, a second semiconductor layer 22 having a second conductivity type, and a light emitting layer 23. For example, the first conductivity type is n-type and the second conductivity type is p-type. The first conductivity type may be p-type and the second conductivity type may be n-type.

第１半導体層２１は、第１の部分（第１半導体部分２１ａ）と、第２の部分（第２半導体部分２１ｂ）と、を含む。第２半導体部分２１ｂは、積層方向（放熱筐体５１から発光部４０に向かうＺ軸方向）に対して交差する方向（例えば、Ｘ軸方向）において、第１半導体部分２１ａと並ぶ。   The first semiconductor layer 21 includes a first portion (first semiconductor portion 21a) and a second portion (second semiconductor portion 21b). The second semiconductor portion 21b is aligned with the first semiconductor portion 21a in a direction (for example, the X-axis direction) intersecting with the stacking direction (Z-axis direction from the heat radiating housing 51 toward the light emitting unit 40).

第２半導体層２２は、第２半導体部分２１ｂと実装基板部１５との間に設けられる。発光層２３は、第２半導体部分２１ｂと第２半導体層２２との間に設けられる。半導体発光素子２０は、例えばフリップチップ型のＬＥＤである。   The second semiconductor layer 22 is provided between the second semiconductor portion 21 b and the mounting substrate unit 15. The light emitting layer 23 is provided between the second semiconductor portion 21 b and the second semiconductor layer 22. The semiconductor light emitting element 20 is, for example, a flip chip type LED.

例えば、第１半導体層２１の第１半導体部分２１ａが、実装パターン１１ｐの第１実装部分１１ａと対向している。第２半導体層２２が、実装パターン１１ｐの第２実装部分１１ｂと対向している。第１半導体層２１の第１半導体部分２１ａが、第１実装部分１１ａと電気的に接続される。第２半導体層２２が、第２実装部分１１ｂと電気的に接続される。これらの接続には、例えば、はんだや金バンプなどの接合部材（以下、第１の接合部材と呼ぶ）が用いられる。これらの接続は、例えば、金属溶融はんだ接合により行われる。または、これらの接続は、例えば、金バンプを用いた超音波熱圧着法により行われる。   For example, the first semiconductor portion 21a of the first semiconductor layer 21 faces the first mounting portion 11a of the mounting pattern 11p. The second semiconductor layer 22 faces the second mounting portion 11b of the mounting pattern 11p. The first semiconductor portion 21a of the first semiconductor layer 21 is electrically connected to the first mounting portion 11a. The second semiconductor layer 22 is electrically connected to the second mounting portion 11b. For these connections, for example, a bonding member such as solder or gold bump (hereinafter referred to as a first bonding member) is used. These connections are made by, for example, metal fusion solder bonding. Alternatively, these connections are made by, for example, an ultrasonic thermocompression method using gold bumps.

例えば、発光素子部３５は、第１接合金属部材２１ｅと、第２接合金属部材２２ｅと、をさらに含む。第１接合金属部材２１ｅは、第１半導体部分２１ａと、いずれかの実装パターン１１ｐ（例えば第１実装部分１１ａ）と、の間に設けられる。第２接合金属部材２２ｅは、第２半導体層２２と、別の実装パターン１１ｐ（例えば、第２実装パターン１１ｐｂ）と、の間に設けられる。第１接合金属部材２１ｅ及び第２接合金属部材２２ｅは、はんだ、または、金バンプを含む。これにより、第１接合金属部材２１ｅ及び第２接合金属部材２２ｅのそれぞれの断面積（Ｘ−Ｙ平面で切断したときの断面積）を大きくできる。これにより、第１接合金属部材２１ｅ及び第２接合金属部材２２ｅを介して、熱を効率良く、実装基板部１５に伝えることができ、放熱性が高まる。以下、第１接合金属部材２１ｅ及び第２接合金属部材２２ｅを、第１の接合部材と総称する。第１接合金属部材２１ｅ及び第２接合金属部材２２ｅ（第１の接合部材）は、融点が１３０〜１４０℃程度のＳｎ−Ｂｉ（すず−ビスマス）はんだなどの接合部材（第３の接合部材）よりも高い融点を有する。例えば、融点が２１０〜２３０℃のＳｎＡｇＣｕ系の半田を使用できる。   For example, the light emitting element unit 35 further includes a first bonding metal member 21e and a second bonding metal member 22e. The first bonding metal member 21e is provided between the first semiconductor portion 21a and one of the mounting patterns 11p (for example, the first mounting portion 11a). The second bonding metal member 22e is provided between the second semiconductor layer 22 and another mounting pattern 11p (for example, the second mounting pattern 11pb). The first bonding metal member 21e and the second bonding metal member 22e include solder or gold bumps. Thereby, each cross-sectional area (cross-sectional area when cut | disconnected by an XY plane) of the 1st joining metal member 21e and the 2nd joining metal member 22e can be enlarged. Thereby, heat can be efficiently transmitted to the mounting substrate portion 15 via the first bonding metal member 21e and the second bonding metal member 22e, and heat dissipation is improved. Hereinafter, the first bonding metal member 21e and the second bonding metal member 22e are collectively referred to as a first bonding member. The first joining metal member 21e and the second joining metal member 22e (first joining member) are joining members (third joining member) such as Sn—Bi (tin-bismuth) solder having a melting point of about 130 to 140 ° C. Has a higher melting point. For example, SnAgCu solder having a melting point of 210 to 230 ° C. can be used.

波長変換層３１は、複数の半導体発光素子２０の少なくとも一部を覆う。波長変換層３１は、複数の半導体発光素子２０から放出される光（例えば第１光）の少なくとも一部を吸収し、第２光を放出する。第２光の波長（例えばピーク波長）は、第１光の波長（例えばピーク波長）とは、異なる。波長変換層３１には、例えば、蛍光体などの複数の波長変換粒子と、複数の波長変換粒子が分散された光透過性樹脂と、を含む。第１光は、例えば青色光を含む。第２光は、第１光よりも波長が長い光を含む。第２光は、例えば、黄色光及び赤色光の少なくともいずれかを含む。   The wavelength conversion layer 31 covers at least a part of the plurality of semiconductor light emitting elements 20. The wavelength conversion layer 31 absorbs at least part of light (for example, first light) emitted from the plurality of semiconductor light emitting elements 20 and emits second light. The wavelength (for example, peak wavelength) of the second light is different from the wavelength (for example, peak wavelength) of the first light. The wavelength conversion layer 31 includes, for example, a plurality of wavelength conversion particles such as a phosphor and a light transmissive resin in which the plurality of wavelength conversion particles are dispersed. The first light includes, for example, blue light. The second light includes light having a longer wavelength than the first light. The second light includes, for example, at least one of yellow light and red light.

この例では、発光素子部３５は、反射層３２をさらに含む。反射層３２は、Ｘ−Ｙ平面内で波長変換層３１を囲む。反射層３２には、例えば、金属酸化物などの複数の粒子と、その粒子が分散された光透過性樹脂と、を含む。金属酸化物などの粒子は、光反射性を有する。この金属酸化物などの粒子として、例えば、ＴｉＯ２及びＡｌ２Ｏ３の少なくともいずれかを用いることができる。反射層３２を設けることで、半導体発光素子２０から放出された光が、積層方向に沿った方向（例えば上方向）に沿って効率良く出射できる。 In this example, the light emitting element unit 35 further includes a reflective layer 32. The reflective layer 32 surrounds the wavelength conversion layer 31 in the XY plane. The reflective layer 32 includes, for example, a plurality of particles such as a metal oxide and a light transmissive resin in which the particles are dispersed. Particles such as metal oxides have light reflectivity. For example, at least one of TiO 2 and Al 2 O 3 can be used as the particles of the metal oxide. By providing the reflective layer 32, light emitted from the semiconductor light emitting element 20 can be efficiently emitted along a direction along the stacking direction (for example, upward).

発光部４０は、例えば、チップオンボード（ＣＯＢ）型のＬＥＤモジュールである。   The light emitting unit 40 is, for example, a chip on board (COB) type LED module.

本実施形態においては、発光素子部３５から放出される光の光束発散度は、例えば１０ｌｍ／ｍｍ２（ルーメン／平方ミリメートル）以上、１００ｌｍ／ｍｍ２以下である。すなわち、本実施形態においては、発光素子部３５から放出される光の発光面積に対する比（光束発散度）が、非常に高い。本願明細書においては、発光面積は、実質的に実装領域１６の面積に対応する。 In the present embodiment, the luminous flux divergence of the light emitted from the light emitting element unit 35 is, for example, 10 lm / mm 2 (lumen / square millimeter) or more and 100 lm / mm 2 or less. That is, in this embodiment, the ratio (light flux divergence) of the light emitted from the light emitting element portion 35 to the light emitting area is very high. In the present specification, the light emitting area substantially corresponds to the area of the mounting region 16.

なお、本実施形態に係る発光装置１１０は、例えば、投光器などに利用される。発光装置１１０は、例えば、図示しない投光器部材に取り付けられ、投光器部材を介して目的の位置に設置される。投光器部材は、投光器の一部であり、例えば、発光装置１１０を目的の位置に設置するための取り付け部材である。   Note that the light emitting device 110 according to the present embodiment is used for, for example, a projector. The light emitting device 110 is attached to, for example, a projector member (not shown), and is installed at a target position via the projector member. The projector member is a part of the projector, and is, for example, an attachment member for installing the light emitting device 110 at a target position.

本実施形態に係る発光装置１１０における放熱部材５０の大きさは、放熱筐体５１をＸ−Ｙ平面（第１平面）に投影したときの縦横長が、例えば１５×１５ｃｍである。また、放熱部材５０の放熱筐体５１のＺ軸方向の厚みは、例えば１ｃｍである。また、放熱フィン７０のＺ軸方向の長さは、例えば２０ｃｍである。また、実装領域１６は、例えば直径１７ｍｍの円形領域である。   The size of the heat radiating member 50 in the light emitting device 110 according to the present embodiment is, for example, 15 × 15 cm when the heat radiating casing 51 is projected on the XY plane (first plane). Moreover, the thickness of the heat dissipation casing 51 of the heat dissipation member 50 in the Z-axis direction is, for example, 1 cm. Further, the length of the radiating fin 70 in the Z-axis direction is, for example, 20 cm. The mounting area 16 is a circular area having a diameter of 17 mm, for example.

本実施形態においては、実装領域１６の面積に対して、放熱部材５０の面積が非常に大きく設定されている。これにより、実装領域１６の上に設けられた発光素子部３５で生じる熱を、面積の大きい放熱部材５０により、面内方向（Ｘ−Ｙ面内方向）に広げる。そして、面内方向に拡がった熱が効率良く放熱される。   In the present embodiment, the area of the heat dissipation member 50 is set to be very large with respect to the area of the mounting region 16. Thereby, the heat generated in the light emitting element portion 35 provided on the mounting region 16 is spread in the in-plane direction (XY in-plane direction) by the heat radiating member 50 having a large area. And the heat spread in the in-plane direction is radiated efficiently.

実装領域１６、第１金属層１１及び第２金属層１２の例について説明する。第１主面１０ａは、実装領域１６と、周辺領域１７と、を有する。この例では、実装領域１６のパターンは、実質的に円形である。実装領域１６の中心は、絶縁性基板１０の中心に略一致するように設けられている。周辺領域１７は、実装領域１６の周辺の領域である。   Examples of the mounting region 16, the first metal layer 11, and the second metal layer 12 will be described. The first major surface 10 a has a mounting area 16 and a peripheral area 17. In this example, the pattern of the mounting area 16 is substantially circular. The center of the mounting region 16 is provided so as to substantially coincide with the center of the insulating substrate 10. The peripheral area 17 is an area around the mounting area 16.

周辺領域１７の面積は、実装領域１６の面積よりも大きい。熱が発生する実装領域１６の面積よりも、周辺領域１７の面積を大きくすることで、発生した熱は、面内方向に沿って効率良く広がる。これにより放熱性が高まる。   The area of the peripheral region 17 is larger than the area of the mounting region 16. By making the area of the peripheral region 17 larger than the area of the mounting region 16 where heat is generated, the generated heat is efficiently spread along the in-plane direction. Thereby, heat dissipation increases.

第１金属層１１の一部である複数の実装パターン１１ｐは、実装領域１６内に設けられる。この例では、複数の実装パターン１１ｐは、円形の領域内に設けられている。換言すると、複数の実装パターン１１ｐが設けられている領域が、実装領域１６となる。実装領域１６は、Ｘ−Ｙ平面に投影したときの複数の実装パターン１１ｐを内包する領域である。複数の実装パターン１１ｐどうしの間の領域は、実装領域１６に含まれる。複数の実装パターン１１ｐのうちの外側に配置される実装パターン１１ｐの外縁を最短距離で繋いだ線の内側が、実装領域１６となる。   A plurality of mounting patterns 11 p that are part of the first metal layer 11 are provided in the mounting region 16. In this example, the plurality of mounting patterns 11p are provided in a circular area. In other words, the region where the plurality of mounting patterns 11 p are provided is the mounting region 16. The mounting area 16 is an area that includes a plurality of mounting patterns 11p when projected onto the XY plane. A region between the plurality of mounting patterns 11 p is included in the mounting region 16. The inner side of the line connecting the outer edges of the mounting patterns 11p arranged on the outer side among the plurality of mounting patterns 11p is the mounting region 16.

光束発散度を高めるために、複数の実装パターン１１ｐは、例えば、略円形の領域内に配置される。この場合には、実用的には、複数の実装パターン１１ｐを内包する略円形の領域を実装領域１６として用いてもよい。   In order to increase the luminous flux divergence, the plurality of mounting patterns 11p are arranged, for example, in a substantially circular region. In this case, practically, a substantially circular area including a plurality of mounting patterns 11p may be used as the mounting area 16.

実装領域１６は、Ｘ−Ｙ平面に投影したときの、複数の実装パターン１１ｐが設けられる領域を含む。実装領域１６は、Ｘ−Ｙ平面に投影したときの、接続部４４、第１コネクタ用電極部４５ｅ及び第２コネクタ用電極部４６ｅが設けられる領域を含まない。この領域は、周辺領域１７に含まれる。   The mounting area 16 includes an area where a plurality of mounting patterns 11p are provided when projected onto the XY plane. The mounting region 16 does not include a region where the connection portion 44, the first connector electrode portion 45e, and the second connector electrode portion 46e are provided when projected onto the XY plane. This area is included in the peripheral area 17.

既に説明したように、複数の実装パターン１１ｐの一部は、互いに独立している。互いに隣接する独立した２つの実装パターン１１ｐは、それらの上に配置される半導体発光素子２０により電気的に接続される。複数の半導体発光素子２０の一部は、例えば、直列に接続される。直列に接続された複数の半導体発光素子２０は、例えば、Ｘ軸方向に沿って並ぶ。   As already described, some of the plurality of mounting patterns 11p are independent of each other. Two independent mounting patterns 11p adjacent to each other are electrically connected by a semiconductor light emitting element 20 disposed thereon. Some of the plurality of semiconductor light emitting elements 20 are connected in series, for example. The plurality of semiconductor light emitting elements 20 connected in series are arranged, for example, along the X-axis direction.

さらに、例えば、複数の実装パターン１１ｐの２つは、接続部４４により接続される。これにより、直列に接続された複数の半導体発光素子２０の群が、さらに接続される。Ｘ軸に沿って並び直列に接続された複数の半導体発光素子２０の群が、Ｙ軸方向に沿って並ぶ。直列に接続された複数の半導体発光素子２０の群は、互いに並列に接続される。   Further, for example, two of the plurality of mounting patterns 11p are connected by the connecting portion 44. Thereby, the group of the several semiconductor light emitting element 20 connected in series is further connected. A group of a plurality of semiconductor light emitting elements 20 arranged in series along the X axis are arranged in the Y axis direction. The groups of the plurality of semiconductor light emitting elements 20 connected in series are connected in parallel to each other.

さらに、実装パターン１１ｐは、図示しない配線パターンを介して、第１コネクタ用電極部４５ｅまたは第２コネクタ用電極部４６ｅと電気的に接続される。第１コネクタ用電極部４５ｅの上に設けられた第１コネクタ４５と、第２コネクタ用電極部４６ｅの上に設けられた第２コネクタ４６と、を介して、実装パターン１１ｐに電流が供給される。その電流が半導体発光素子２０に供給され、光が生じる。   Further, the mounting pattern 11p is electrically connected to the first connector electrode portion 45e or the second connector electrode portion 46e via a wiring pattern (not shown). A current is supplied to the mounting pattern 11p via the first connector 45 provided on the first connector electrode portion 45e and the second connector 46 provided on the second connector electrode portion 46e. The The current is supplied to the semiconductor light emitting element 20, and light is generated.

第２金属層１２の面積は、実装領域１６の面積よりも大きい。例えば、Ｘ−Ｙ平面（積層方向に対して平行な第１平面）に投影した第２金属層１２の面積は、第２主面１０ｂの面積の９５％以上である。第２金属層１２の面積を大きくすることで、熱の放熱の効率が高まる。   The area of the second metal layer 12 is larger than the area of the mounting region 16. For example, the area of the second metal layer 12 projected onto the XY plane (a first plane parallel to the stacking direction) is 95% or more of the area of the second major surface 10b. Increasing the area of the second metal layer 12 increases the efficiency of heat dissipation.

接合部８０は、実質的に第２金属層１２のパターンに沿っている。第２金属層１２の面積を大きくすることで、接合部８０の面積を広げることができる。これにより、接合部８０を介した熱伝導の効率が向上できる。   The joint 80 substantially follows the pattern of the second metal layer 12. By increasing the area of the second metal layer 12, the area of the joint 80 can be increased. Thereby, the efficiency of heat conduction through the junction 80 can be improved.

例えば、Ｘ−Ｙ平面（第１平面）に投影したときの第２金属層１２の外縁は、実装領域１６の外縁の外側に位置する。つまり、Ｘ−Ｙ平面（第１平面）に投影したときの第２金属層１２の面積は、実装領域１６の面積より大きい。   For example, the outer edge of the second metal layer 12 when projected onto the XY plane (first plane) is located outside the outer edge of the mounting region 16. That is, the area of the second metal layer 12 when projected onto the XY plane (first plane) is larger than the area of the mounting region 16.

なお、例えば、Ｘ−Ｙ平面（第１平面）に投影したときの第２金属層１２の外縁は、実装領域１６の外縁の内側に位置してもよい。つまり、Ｘ−Ｙ平面（第１平面）に投影したときの第２金属層１２の面積は、実装領域１６の面積より小さくてもよい。この場合においても、Ｘ−Ｙ平面（第１平面）に投影したときの第２金属層１２の面積は、実装領域１６の面積の８０％よりも大きい。これよりも小さいと、放熱の効率が低くなる。   For example, the outer edge of the second metal layer 12 when projected onto the XY plane (first plane) may be located inside the outer edge of the mounting region 16. That is, the area of the second metal layer 12 when projected onto the XY plane (first plane) may be smaller than the area of the mounting region 16. Even in this case, the area of the second metal layer 12 when projected onto the XY plane (first plane) is larger than 80% of the area of the mounting region 16. If it is smaller than this, the efficiency of heat dissipation becomes low.

本実施形態においては、絶縁性基板１０の下面に、第１金属層１１と絶縁された第２金属層１２が設けられている。第２金属層１２は、例えば、半導体発光素子２０に供給される電流の経路とはなっていない。第２金属層１２は、高い放熱性を得るために設けられている。   In the present embodiment, the second metal layer 12 insulated from the first metal layer 11 is provided on the lower surface of the insulating substrate 10. For example, the second metal layer 12 is not a path for a current supplied to the semiconductor light emitting element 20. The second metal layer 12 is provided to obtain high heat dissipation.

例えば、絶縁性基板１０の上面と下面との両方に電極を設け、下面に設けられた電極を、上面に設けられた電極と、絶縁性基板１０を貫通するスルーホールで電気的に接続する構成がある。例えば、上面に設けられた電極に半導体発光素子２０を接続し、半導体発光素子２０に供給する電流は、下面に設けられた電極を介して供給される。このような構成においては、下面に設けられた電極は、半導体発光素子２０に供給する電流の経路となっている。このため、下面に設けられた電極（の少なくとも１つ）は、その下側に設けられる放熱部材５０と接触させることができない。このため、下面に設けられた電極を介しての放熱は不十分である。   For example, the electrode is provided on both the upper surface and the lower surface of the insulating substrate 10, and the electrode provided on the lower surface is electrically connected to the electrode provided on the upper surface through a through hole penetrating the insulating substrate 10. There is. For example, the semiconductor light emitting element 20 is connected to the electrode provided on the upper surface, and the current supplied to the semiconductor light emitting element 20 is supplied via the electrode provided on the lower surface. In such a configuration, the electrode provided on the lower surface serves as a current path for supplying the semiconductor light emitting element 20. For this reason, the electrode (at least one) provided on the lower surface cannot be brought into contact with the heat radiating member 50 provided on the lower side thereof. For this reason, heat dissipation through the electrodes provided on the lower surface is insufficient.

このような構成は、光束発散度が低い発光装置（例えば、光束発散度が１０ｌｍ／ｍｍ２未満の発光装置）には、用いることができると考えられる。しかしながら、このような構成を、光束発散度が高い発光装置（例えば、光束発散度が１０ｌｍ／ｍｍ２以上の発光装置）に用いると、放熱が不十分になり、その結果、十分な放熱性が得られない。 Such a configuration can be used for a light emitting device having a low luminous flux divergence (for example, a light emitting device having a luminous flux divergence of less than 10 lm / mm 2 ). However, when such a configuration is used for a light-emitting device having a high luminous flux divergence (for example, a light-emitting device having a luminous flux divergence of 10 lm / mm 2 or more), heat dissipation becomes insufficient, and as a result, sufficient heat dissipation is achieved. I can't get it.

このように、絶縁性基板１０の下面に、第１金属層１１と絶縁された第２金属層１２が設けられる構成は、投光器のように、高い光束発散度の発光装置に特別に適用される構成である。これにより、光束発散度が高い場合にも、放熱性を高めることができる。なお、第２金属層１２を省略する構成としてもよい。   Thus, the structure in which the second metal layer 12 insulated from the first metal layer 11 is provided on the lower surface of the insulating substrate 10 is specially applied to a light emitting device having a high luminous flux divergence, such as a projector. It is a configuration. Thereby, even when the luminous flux divergence is high, the heat dissipation can be enhanced. Note that the second metal layer 12 may be omitted.

本実施形態において、放熱部材５０の放熱能力は、例えば１光源当たり７０Ｗ／（ｍ・Ｋ）（ワット／（メートル・ケルビン）以上である。ここで、１光源とは、１つの実装領域１６に実装された半導体発光素子２０の群である。例えば、１光源の総消費電力のうち、発光に用いられる電力以外の消費電力が、熱に変換される。放熱部材５０が光源の発熱を十分に放熱するためには、放熱部材５０の放熱能力が光源の発熱の総量以上であればよい。   In the present embodiment, the heat dissipation capability of the heat dissipation member 50 is, for example, 70 W / (m · K) (watts / (meter · Kelvin) or more per light source. Here, one light source corresponds to one mounting region 16. A group of mounted semiconductor light emitting elements 20. For example, power consumption other than the power used for light emission out of the total power consumption of one light source is converted to heat. In order to dissipate heat, the heat dissipating capability of the heat dissipating member 50 may be equal to or greater than the total amount of heat generated by the light source.

図示しない投光器部材には、通常、アルミニウムが用いられ、投光器部材の熱伝導率は、放熱部材５０の熱伝導率よりも低い。放熱部材５０の放熱能力を投光器部材よりも高くすることで、投光器部材に至るまでに十分に熱を面内方向（Ｘ−Ｙ面内方向）に広げることができ、放熱性が向上する。   Usually, aluminum is used for a projector member (not shown), and the thermal conductivity of the projector member is lower than the thermal conductivity of the heat dissipation member 50. By making the heat dissipation capability of the heat dissipation member 50 higher than that of the projector member, the heat can be sufficiently spread in the in-plane direction (XY in-plane direction) before reaching the projector member, and the heat dissipation is improved.

［発光装置の製造手順］
図４は、実施形態に係る発光装置の製造手順を例示する模式図である。図４の（ａ）に示すように、先ず、図示しない製造装置は、発光部４０を組立て、その後、発光部４０と、放熱筐体５１とを第２の接合部８０を介して接合する。次に、図４の（ｂ）に示すように、製造装置は、接合部８０を介して発光部４０と接合した放熱筐体５１に、接合部６１（図２参照）を介してヒートパイプ６０を、接合部７３（図２参照）を介して放熱フィン７０を、それぞれ接合する。最後に、図４の（ｃ）に示すように、製造装置は、放熱筐体５１に接合した放熱フィン７０などの塗装を含む仕上げ処理を行う。 [Manufacturing procedure of light emitting device]
FIG. 4 is a schematic view illustrating the manufacturing procedure of the light emitting device according to the embodiment. As shown in FIG. 4A, first, a manufacturing apparatus (not shown) assembles the light emitting unit 40, and then joins the light emitting unit 40 and the heat radiating housing 51 via the second joint 80. Next, as shown in FIG. 4B, the manufacturing apparatus connects the heat pipe 60 to the heat radiating housing 51 joined to the light emitting part 40 via the joint 80 via the joint 61 (see FIG. 2). Are joined to the heat radiation fins 70 via the joint 73 (see FIG. 2). Finally, as shown in FIG. 4C, the manufacturing apparatus performs a finishing process including painting of the heat radiation fins 70 joined to the heat radiation housing 51.

図５は、実施形態に係る発光装置の製造手順を例示するフローチャートである。先ず、図示しない製造装置は、配線パターンを絶縁性基板１０上に形成する（ステップＳ１１）。配線パターンを絶縁性基板１０上に形成する方法は、各種の既存技術を用いることができる。   FIG. 5 is a flowchart illustrating the manufacturing procedure of the light emitting device according to the embodiment. First, a manufacturing apparatus (not shown) forms a wiring pattern on the insulating substrate 10 (step S11). Various existing techniques can be used as a method of forming the wiring pattern on the insulating substrate 10.

次に、製造装置は、第１の接合部材を用いて、半導体発光素子２０を絶縁性基板１０に接合する（ステップＳ１２）。製造装置は、半導体発光素子２０を絶縁性基板１０に接合する際に、半導体発光素子２０と、絶縁性基板１０とを、はんだや金バンプなどの第１接合金属部材２１ｅ及び第２接合金属部材２２ｅにより接合する。   Next, the manufacturing apparatus joins the semiconductor light emitting element 20 to the insulating substrate 10 using the first joining member (step S12). When the manufacturing apparatus joins the semiconductor light emitting element 20 to the insulating substrate 10, the semiconductor light emitting element 20 and the insulating substrate 10 are joined to the first bonding metal member 21 e and the second bonding metal member such as solder and gold bumps. It joins by 22e.

次に、製造装置は、第２の接合部材を用いて、放熱筐体５１を絶縁性基板１０に接合する（ステップＳ１３）。次に、製造装置は、第３の接合部材を用いて、放熱フィン７０を放熱筐体５１及び放熱フィン７０に接合する（ステップＳ１４）。次に、製造装置は、ヒートパイプ６０を放熱筐体５１に取り付け、第３の接合部材を用いて、ヒートパイプ６０を放熱筐体５１に固定する（ステップＳ１５）。次に、製造装置は、放熱フィン７０の塗装などを含む仕上げ処理を行う（ステップＳ１６）。   Next, the manufacturing apparatus joins the heat radiating casing 51 to the insulating substrate 10 using the second joining member (step S13). Next, the manufacturing apparatus joins the radiating fin 70 to the radiating casing 51 and the radiating fin 70 using the third joining member (step S14). Next, the manufacturing apparatus attaches the heat pipe 60 to the heat radiating housing 51, and fixes the heat pipe 60 to the heat radiating housing 51 using the third joining member (step S15). Next, the manufacturing apparatus performs a finishing process including painting of the radiation fin 70 (step S16).

実施形態によれば、例えば、放熱部材５０における接合部６１及び接合部７１の第３の接合部材の融点が、半導体発光素子２０及び絶縁性基板１０の第１接合金属部材２１ｅ及び第２接合金属部材２２ｅの第１の接合部材の融点、絶縁性基板１０及び放熱部材５０の接合部８０の第２の接合部材の融点よりも低い。このため、半導体発光素子２０を絶縁性基板１０に接合し、絶縁性基板１０に放熱部材５０を接合した後に、放熱部材５０に放熱フィン７０及びヒートパイプ６０を接合する場合であっても、放熱部材５０に放熱フィン７０及びヒートパイプ６０を接合する際の第３の接合部材の融解熱により、第１の接合部材及び第２の接合部材が融解することを防止する。よって、信頼性が高い発光装置１１０を製造することができる。   According to the embodiment, for example, the melting points of the third joining members of the joining portion 61 and the joining portion 71 in the heat dissipation member 50 are the first joining metal member 21e and the second joining metal of the semiconductor light emitting element 20 and the insulating substrate 10. The melting point of the first bonding member of the member 22e is lower than the melting point of the second bonding member of the bonding portion 80 of the insulating substrate 10 and the heat dissipation member 50. Therefore, even when the semiconductor light emitting element 20 is bonded to the insulating substrate 10 and the heat dissipation member 50 is bonded to the insulating substrate 10, the heat dissipation fin 70 and the heat pipe 60 are bonded to the heat dissipation member 50. The melting of the third bonding member when the radiating fin 70 and the heat pipe 60 are bonded to the member 50 is prevented from melting the first bonding member and the second bonding member. Therefore, the light-emitting device 110 with high reliability can be manufactured.

なお、実施形態において、第３の接合部材の融点は、第１の接合部材及び第２の接合部材よりも低くした。さらには、第２の接合部材の融点が、第１の接合部材よりも低いものでもよい。すなわち、発光装置１１０において、図２に示すＺ軸方向より下位に位置する程、各材料の融点が低いものでもよい。これにより、さらに信頼性が高い発光装置１１０を製造することができる。   In the embodiment, the melting point of the third bonding member is lower than that of the first bonding member and the second bonding member. Further, the melting point of the second bonding member may be lower than that of the first bonding member. That is, in the light emitting device 110, the melting point of each material may be lower as it is positioned lower than the Z-axis direction shown in FIG. Thereby, the light emitting device 110 with higher reliability can be manufactured.

本発明の実施形態を説明したが、実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。実施形態や変形例は、発明の範囲や要旨に含まれると同様に、特許請求の範囲に記載された発明とその均等の範囲に含まれるものである。   Although embodiments of the present invention have been described, the embodiments have been presented by way of example and are not intended to limit the scope of the invention. The embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. The embodiments and the modifications are included in the scope of the invention and the gist thereof, and are also included in the invention described in the claims and the equivalents thereof.

１０・・・絶縁性基板
１１・・・第１金属層
１２・・・第２金属層
２０・・・半導体発光素子
２１ｅ・・第１接合金属部材
２２ｅ・・第２接合金属部材
４０・・・発光部
５０・・・放熱部材
５１・・・放熱筐体
５２・・・凹部
５３・・・収容部
６０・・・ヒートパイプ
６１・・・接合部
７０・・・放熱フィン
７１・・・接合部
７２・・・貫通孔
７３・・・接合部
８０・・・接合部
１１０・・発光装置 DESCRIPTION OF SYMBOLS 10 ... Insulating board | substrate 11 ... 1st metal layer 12 ... 2nd metal layer 20 ... Semiconductor light emitting element 21e ... 1st joining metal member 22e ... 2nd joining metal member 40 ... Light emitting part 50 ... Heat dissipation member 51 ... Heat dissipation housing 52 ... Recessed part 53 ... Housing part 60 ... Heat pipe 61 ... Junction part 70 ... Heat radiation fin 71 ... Joint part 72 ... Through-hole 73 ... Joining part 80 ... Joining part 110 ... Light-emitting device

Claims (3)

半導体発光素子と；
配線パターンが形成された実装面を有する絶縁性基板と；
前記実装面において、前記半導体発光素子及び前記絶縁性基板を接合する第１の接合部と；
放熱面と、前記放熱面の反対面と、前記放熱面及び前記放熱面の反対面の間を通過するヒートパイプを収容する収容部とを有する放熱筐体と；
前記実装面の反対面及び前記放熱面の反対面において、前記絶縁性基板及び前記放熱筐体を接合する第２の接合部と；
放熱フィンと；
前記収容部に収容された際に前記放熱筐体から延伸する延伸部分が前記放熱フィンと接合するヒートパイプと；
前記放熱面において前記放熱筐体及び前記放熱フィンを接合し、前記収容部において前記放熱筐体及び前記ヒートパイプを接合し、前記延伸部分において前記放熱フィン及び前記ヒートパイプを接合する、前記第１の接合部、前記第２の接合部よりも融点が低い第３の接合部と；
を具備する発光装置。 A semiconductor light emitting device;
An insulating substrate having a mounting surface on which a wiring pattern is formed;
A first bonding portion for bonding the semiconductor light emitting element and the insulating substrate on the mounting surface;
A heat dissipating housing having a heat dissipating surface, an opposite surface of the heat dissipating surface, and an accommodating portion for accommodating a heat pipe passing between the heat dissipating surface and the opposite surface of the heat dissipating surface;
A second joint for joining the insulating substrate and the heat radiating housing on the opposite surface of the mounting surface and the opposite surface of the heat radiating surface;
With heat dissipation fins;
A heat pipe in which an extending portion extending from the heat radiating casing when joined in the housing portion joins the heat radiating fin;
Joining the heat radiating housing and the heat radiating fin at the heat radiating surface, joining the heat radiating housing and the heat pipe at the accommodating portion, and joining the heat radiating fin and the heat pipe at the extended portion; A third joint having a melting point lower than that of the second joint;
A light emitting device comprising: 投光器部材と；
前記投光器部材に取り付けられた請求項１に記載の発光装置と；
を具備する投光器。 A projector member;
The light-emitting device according to claim 1 attached to the projector member;
A projector comprising: 請求項１に記載の発光装置の製造方法であって、
前記半導体発光素子及び前記絶縁性基板を前記第１の接合部により接合する第１の接合工程と；
前記絶縁性基板及び前記放熱筐体を前記第２の接合部により接合する第２の接合工程と；
前記第１の接合工程及び前記第２の接合工程の後に、前記放熱筐体及び前記放熱フィンと、前記放熱筐体及び前記ヒートパイプと、前記放熱フィン及び前記ヒートパイプとのそれぞれを前記第３の接合部により接合する第３の接合工程と；
を具備する発光装置の製造方法。 A method of manufacturing a light emitting device according to claim 1,
A first bonding step of bonding the semiconductor light emitting element and the insulating substrate by the first bonding portion;
A second joining step of joining the insulating substrate and the heat radiating housing by the second joining portion;
After the first joining step and the second joining step, the heat radiating housing and the heat radiating fin, the heat radiating housing and the heat pipe, the heat radiating fin and the heat pipe are respectively connected to the third. A third joining step for joining by the joining portion;
A method for manufacturing a light emitting device comprising:
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