TW201719744A - 囊封的半導體封裝以及其製造方法 - Google Patents
囊封的半導體封裝以及其製造方法 Download PDFInfo
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Abstract
本發明提供囊封半導體封裝及其生產方法。作為非限制性範例,可以藉由將晶圓部分切塊、模製部分切塊的晶圓和將模製的並且部分切塊的晶圓完全切塊,借此生產半導體封裝。
Description
本發明關於一種囊封的半導體封裝以及其製造方法。
各種半導體封裝,例如囊封在模製化合物中的半導體封裝,生產起來不必要地昂貴並且在囊封過程期間會遇到製造缺陷。所屬領域的技術人員藉由參看圖式比較常規方法與本公開其餘部分中闡述的本發明的方法和系統的一些方面,將容易明白常規囊封半導體封裝及其製造方法的局限性和缺點。
本公開的各種方面提供囊封半導體封裝及其生產方法。作為非限制性範例,可以藉由部分切塊晶圓、模製部分切塊的晶圓和完全切塊模製的並且部分切塊的晶圓,借此生產半導體封裝。
100‧‧‧範例方法的流程圖
105-195‧‧‧方塊
220‧‧‧方塊120的範例圖示
222‧‧‧黏合劑
224‧‧‧晶圓
230‧‧‧方塊130產生的部分切塊晶圓的範例圖示
231‧‧‧第一晶粒
232‧‧‧第二晶粒
233‧‧‧連接件
234‧‧‧第三晶粒
235‧‧‧連接件
236‧‧‧第四晶粒
237‧‧‧連接件
238‧‧‧第五晶粒
239‧‧‧連接件
240‧‧‧覆蓋圖2B的切塊晶圓的圖示
245‧‧‧包封材料
250‧‧‧從方塊160產生的切塊囊封晶圓的範例圖示
251‧‧‧第一半導體封裝
252‧‧‧第二半導體封裝
254‧‧‧第三半導體封裝
256‧‧‧第四半導體封裝
258‧‧‧第五半導體封裝
圖1示出了根據本公開的各種方面的製造半導體封裝的範例方法的流程圖。
圖2A-圖2D示出了說明根據本公開的各種方面的圖1的範例方法的各種方面的圖式。
圖3A-圖3C示出了說明根據本公開的各種方面的範例半導體封裝的側視圖、透視圖和分解視圖的圖式。
如本文中所使用,“和/或”意味著由“和/或”聯結的列表中的專案中的任何一個或多個。作為範例,“x和/或y”意指三元素集合{(x),(y),(x,y)}中的任何元素。也就是說,“x和/或y”意指“x和y中的一個或兩個”。作為另一範例,“x、y和/或z”意指七元素集合{(x),(y),(z),(x,y),(x,z),(y,z),(x,y,z)}中的任何元素。也就是說,“x、y和/或z”意指“x、y及z中的一或多個”。如本文所用,術語“例如”和“舉例而言”劃出一或多個非限制性範例、例子或示例的列表。
本文中所使用的術語僅出於描述特定範例的目的,且並不希望限制本公開。如本文中所使用,除非上下文另外明確指示,否則單數形式也意圖包含複數形式。將進一步理解,術語“包括”、“包含”、“具有”等等當在本說明書中使用時,表示所陳述特徵、整體、步驟、操作、元件和/或元件的存在,但是不排除一個或多個其它特徵、整體、步驟、操作、元件、元件和/或其群組的存在或添加。
將理解,雖然術語第一、第二等可在本文中用以描述各種元件,但這些元件不應受這些術語限制。這些術語僅用以將一個元件與另一元件區分開來。因此,例如,在不脫離本公開的教示的情況下,下文論述的第一元件、第一元件或第一部分可被稱為第二元件、第二元件或第二部分。類似地,例如“上部”、“下部”、“側面”、“頂部”、“底部”等的各種空間術語可用於以相對方式將一個元件與另一元件區分開來。然
而,應理解,元件可以不同方式定向,例如,在不脫離本公開的教示的情況下,半導體裝置可以側向轉動使得其“頂”表面水準地朝向且其“側”表面垂直地朝向。
在生產模製半導體封裝的範例方法中,將晶圓完全切塊。接著將單獨的晶粒分別拾取和放置在載體上。當晶粒固持在載體上的合適位置時,模製晶粒。接著將模製的晶粒再次單一化以形成單個封裝。此過程包含各種改進機會。舉例來說,晶粒拾取和放置過程是低效並且昂貴的。另外,在模製期間,單個晶粒可能會在載體上移位,從而導致有缺陷的封裝。本公開的各種方面提供模製半導體封裝及其生產方法,其能得到更低的生產成本、更快的生產時間和更低數目的有缺陷的封裝。
圖1示出了根據本公開的各種方面的製造半導體封裝的範例方法100的流程圖。範例封裝可以例如包括晶圓級晶圓規模封裝,但本公開的範圍不限於此。
範例方法100可以在方塊105處開始執行。範例方法100可以回應於任何各種原因或條件而開始執行,在此提供所述各種原因或條件的非限制性範例。舉例來說,範例方法100可以開始執行以回應於一上游過程,該上游過程是指半導體晶粒的晶圓準備好被封裝和/或在前往實施所述方法100的一平臺的路途中或路途的一部分。另外,舉例來說,範例方法100可以開始執行以回應於方法100的執行流程返回到來自方法100的另一方塊的方塊105。一般而言,範例方法100可以回應於任何多種原因或條件而開始執行。因此,本公開的範圍不應受到任何特定原因或條件的特性的限制。
範例方法100可以在方塊110處包括接收半導體晶粒的晶圓。方塊110可以包括以任何各種方式接收晶圓,在此提供所述各種方式的非限制性範例。舉例來說,方塊110可包括從操作者接收晶圓。而且,舉例來說,方塊110可包括從自動操控系統接收晶圓(例如,無需直接操作者交互)。另外,舉例來說,方塊110可包括在行進或傳送緊固件等上作為單獨的零件接收原始晶圓。一般而言,方塊110可包括接收半導體晶粒的晶圓。因此,本公開的範圍不應受到接收此晶圓的任何特定方式的特性的限制。
雖然本公開總體上涉及半導體晶粒的晶圓(例如矽晶圓等),但是本公開的各種方面的範圍不限於此。舉例來說,可以作為面板、晶圓的部分等接收半導體晶粒。並且,接收到的晶圓可包括任何多種特徵,例如在後端晶圓製造過程中添加到晶圓的特徵、藉由先前半導體器件封裝過程添加的特徵等。舉例來說,晶圓可僅包括晶粒,晶圓可包括形成於其上(例如在晶圓的作用側上)的各種電介質層和/或傳導層(例如再分佈層),接收到的晶圓可具有形成於其上(例如在晶圓的作用側上)的互連特徵(例如襯墊、凸台、凸塊等),接收到的晶圓可包括形成於其中的穿矽通孔等。因此,本公開的範圍不應受到接收到的半導體晶粒的晶圓或面板的特定特性的限制。
範例方法100可以在方塊120處包括固定接收到的晶圓(例如在方塊110處接收到的晶圓)。方塊120可以包括以任何各種方式固定接收到的晶圓,在此提供所述各種方式的非限制性範例。舉例來說,方塊120可包括將接收到的晶圓附著到膠帶(例如熱釋放膠帶、紫外輻射釋放膠帶
等),膠帶安置於載體上。舉例來說,可以將接收到的晶圓的作用側放置成與釋放膠帶接觸。而且舉例來說,方塊120可包括將接收到的晶圓附著到黏合膏或液體,其例如塗布在載體上或者放置在載體上。應注意,必要時可以執行黏合固化。另外,舉例來說,方塊120可包括利用真空和/或機械機構固定晶圓等。
晶圓固定至的載體可包括多種特性中的任何特性。舉例來說,載體可包括金屬載體、玻璃載體、陶瓷載體等。載體可以例如包括與後續切塊、模製或一般封裝形成操作中利用的對應的緊固特徵或設備配合的特徵。
圖2A處示出了方塊120的範例圖示220。舉例來說,晶圓224的作用側放置在黏合劑層222(例如熱釋放膠帶等)上。一般而言,晶圓224將覆蓋黏合劑222,圖2A中出於說明性目的將黏合劑222露出。
一般而言,方塊120可包括以任何各種方式固定接收到的晶圓。因此,本公開的範圍不應受到用於固定晶圓的任何特定方式和/或機構的特性的限制。
範例方法100可以在方塊130處包括將被固定的晶圓(例如如在方塊120處被固定)切塊。方塊130可以包括以任何各種方式將晶圓切塊,在此提供所述各種方式的非限制性範例。
舉例來說,方塊130可包括僅僅將晶圓部分地切塊(或單一化)。在範例實施方案中,方塊130可包括沿著單一化切割道的第一部分完全切割或蝕刻穿過晶圓,以及阻止沿著單一化切割道的第二部分完全切割或蝕刻穿過晶圓(或者阻止對晶圓進行任何切割或蝕刻)。圖2B提供從方塊
130產生的部分切塊晶圓的範例圖示230。
圖示230示出了晶圓的第一晶粒231,其用第二連接件233(或連接部件)連接到第二晶粒232。此連接件233可以例如對應于單一化切割道的未切割(或非完全切割、或未蝕刻、或未完全蝕刻等)部分。第二連接件233可以例如包括與第一晶粒231相同或者可以更短的高度(或厚度)。而且,舉例來說,連接件233可具有多種長度特性中的任何長度特性。舉例來說,在範例實施方案中,連接件233可以在第一晶粒231與第二晶粒232之間是140um長(例如+/-5%或+/-10%)或更小。換句話說,單一化切割道的切割(或蝕刻)部分的寬度可以是140um寬(例如+/-5%或+/-10%)或更小。連接件233還可例如具有多種寬度特性中的任何寬度特性。舉例來說,連接件233的寬度總體上可以與其高度相同。而且,舉例來說,連接件233的寬度可以小於其高度。
雖然連接件233通常顯示為從第一晶粒231的側表面的中間延伸到第二晶粒232的側表面的中間,但是連接件233可以位於任何多種位置。舉例來說,連接件233可以從晶粒231和232的中心偏移。而且,舉例來說,連接件233可以形成在晶粒231和232的相鄰角等。另外,雖然第一晶粒231與第二晶粒232之間僅僅示出單個範例連接件233,但是第一晶粒231與第二晶粒232之間(或任何鄰近晶粒之間)可存在多個這樣的連接件。在另一範例實施方案中,可存在將對角線晶粒彼此連接的連接件,例如作為對連接橫向地相鄰的晶粒的補充或取代。
類似地,第一晶粒231可以用連接件235連接到第三晶粒234,第一晶粒231可以用連接件237連接到第四晶粒236,並且第一晶粒
231可以用連接件239連接到第五晶粒238。雖然範例連接件全部示出為具有相同尺寸,但是本公開的範圍不限於此。而且,例如,具有相對較少晶粒的單一化切割道中的連接件可以比具有相對較多晶粒的單一化切割道中的連接件更寬(例如,在晶圓包括矩形晶粒的場景中等)。
應注意,雖然本文中論述的範例實施方案可包括連接件,但是本公開的範圍不僅僅限於利用這樣的連接件的實施方案。換句話說,可以在方塊130處執行完全切塊而不是部分切塊。
方塊130可包括利用多種技術中的任何技術執行切塊。舉例來說,方塊130可包括利用蝕刻(例如等離子蝕刻、液體蝕刻、乾式蝕刻等)將晶圓切塊(例如部分地切塊)。舉例來說,單一化切割道的第二部分(例如對應於本文中論述的連接件)可以被掩蔽,以防止這樣的第二部分受到蝕刻,而單一化切割道的第一部分可以不受掩蔽並且經受蝕刻。應注意,可以利用其它晶圓蝕刻和/或切割技術(例如雷射切塊、機械切塊等)。
應注意,在蝕刻晶圓利用膠帶(例如熱釋放膠帶)固定到載體的範例實施方案中,方塊130可以在切塊時使膠帶保持完好。然而,在另一個實施方案中,膠帶也可以被蝕刻或切割(例如完全或部分)。
一般而言,方塊130可包括以任何各種方式(例如部分切塊等)將被固定的晶圓(例如如在方塊120處被固定)切塊。因此,本公開的範圍不受任何特定切塊方式的限制。
範例方法100可以在方塊140處包括將晶圓(例如如在方塊130處切塊)囊封在囊封物中。方塊140可包括以任何各種方式執行這樣的囊封,本文中提供各種方式的非限制性範例。舉例來說,方塊140可包括用
模製化合物(例如環氧模製化合物(EMC)等)在切塊的晶圓上包覆模製。方塊140可以例如包括利用轉移模製製程、壓縮模製製程、注射模製製程等。
圖2C示出了包含覆蓋圖2B的切塊晶圓的包封材料245的圖示240。可以在單一化切割道或更具體來說在單一化切割道的在方塊130處的切塊之後沒有晶圓材料的部分中填充囊封材料。囊封材料可以因而包圍連接件233、235、237和239的至少側面和頂面。囊封材料245還可覆蓋晶粒的背對載體的表面(例如,在作用表面安裝到載體的場景中,這是晶粒的非作用表面)。圖2C中示出了此配置,其中晶粒和/或其間的連接件都未示出為從囊封物245中露出。應注意,這樣的晶粒表面不需要被囊封物覆蓋。
一般而言,方塊140可包括將晶圓(例如如在方塊130處切塊)囊封在囊封物中。因此,本公開的範圍不受任何特定類型的囊封的特性的限制。
範例方法100可以在方塊150處包括將囊封晶圓(例如在方塊140處囊封)從載體上釋放。方塊150可以包括以任何各種方式釋放囊封晶圓,在此提供所述各種方式的非限制性範例。舉例來說,在方塊120包括利用熱釋放膠帶固定晶圓的範例實施方案中,方塊150可包括向熱釋放膠帶施熱,由此使得熱釋放膠帶失去其黏合力。在其它範例實施方案中,方塊150可包括移除用於在方塊120處固定晶圓的機械和/或真空力。在又另一範例中,方塊150可包括利用紫外光和/或化學物質移除或抵消用於在方塊120處固定晶圓的黏合劑。一般而言,方塊150可包括從載體釋放囊封晶圓。因此,本公開的範圍不受任何執行這樣的釋放的特定方式的特性的
限制。
應注意,在各種範例實施方案中,方塊150可以跳過。舉例來說,在晶圓在方塊120處被固定至的同一個載體和/或相同晶圓朝向可以用在後續操作(例如將囊封晶圓切塊)中的範例實施方案中,囊封晶圓可以以此方式繼續受到固定。
還應注意,在各種範例實施方案中(例如在從載體釋放囊封晶圓之後),可以形成各種電介質層和傳導層(例如再分佈層),例如以將信號路由到期望位置(例如在晶粒的作用表面上、以扇出配置在囊封物的底表面上等)。
範例方法100可以在方塊160處包括將囊封晶圓切塊。方塊160可以包括以任何各種方式將囊封晶圓切塊,在此提供所述各種方式的非限制性範例。舉例來說,方塊160可包括利用雷射或機械鋸(例如從晶圓的頂面、從晶圓的底面等)將囊封晶圓切塊。
圖2D提供從方塊160產生的切塊囊封晶圓的範例圖示250。這樣的切塊可以例如形成單個半導體裝置封裝。舉例來說,第一半導體封裝251可包括圖2B中所示的第一半導體晶粒231。類似地,第二半導體封裝252、第三半導體封裝254、第四半導體封裝256、和第五半導體封裝258可分別包括第二半導體晶粒232、第三半導體晶粒234、第四半導體晶粒236、和第五半導體晶粒238。
在範例實施方案中,當比較圖2B和圖2D時如圖解所示,在方塊130處(例如在部分切塊期間)在晶粒之間形成具有第一寬度(例如如圖2B中所示在晶粒之間)的第一單一化切割道。此單一化切割道可以例如
具有保持在其中的連接件。方塊160接著可包括形成具有比第一寬度更窄的第二寬度的單一化切割道(例如如圖2D中所示在模製晶粒之間)。因此,晶粒的側表面保持被囊封材料245覆蓋。
舉例來說,在範例實施方案中並且如本文所論述,方塊130可以得到140um的第一單一化切割道寬度(例如蝕刻線寬等)。繼續範例實施方案,方塊160可包括形成具有100um(例如對應於雷射光束寬度、鋸條寬度等)的寬度(例如切割線寬等)的單一化切割道。在此實施方案中,40um的模製材料245可以沿著單一化切割道保持(例如相應20um的模製材料245)耦合到每個半導體晶粒的相應側表面。應注意,這樣的寬度參數是範例,並且本公開的範圍不限於此。舉例來說,根據本公開的各種方面,可以在方塊160處切塊之後保留相鄰每個半導體晶粒(例如從半導體晶粒的側面延伸)的25um的模製化合物寬度。
在方塊160處切塊可以切穿模製化合物和在鄰近半導體晶粒之間延伸並且耦合鄰近半導體晶粒的連接件。舉例來說,參看圖2B和圖2C,方塊160可包括切穿模製化合物245和連接件233、235、237和239。與囊封材料245一樣,在方塊160處形成的單一化切割道比在方塊130處形成的單一化切割道(例如切割線寬等)更寬(例如蝕刻線寬等)的範例情境中,連接件233、235、237和239的一些部分將在切塊之後保留,並且這樣的連接件233、235、237和239的相應端面可以與囊封材料245的相應切割側面共面。連接件233、235、237和239的這樣的剩餘部分在本文中也可被稱作突片。
一般而言,方塊160可包括將囊封晶圓切塊。因此,本公開
的範圍不應受到執行這樣的切塊的任何特定方式的特性的限制。
範例方法100可以在方塊195處包括執行從囊封晶圓切塊的封裝的持續處理。這樣的持續處理可包括任何多種類型的持續處理(例如丟球、標記、測試、進一步封裝、信號路由等)。方塊195還可例如包括使範例方法100的執行流返回到範例方法100的任何先前方塊(例如用於接收下一個晶圓和處理這下一個晶圓的方塊110等)。
應注意,作為一範例提出範例方法100用於說明本公開的各種方面。本公開的範圍不限於範例方法100的具體特性。
現在轉向圖3A-圖3C,這些圖示出了根據本公開的各種方面的示出範例半導體封裝251的側視圖、透視圖和分解圖的圖式。範例半導體封裝251可以例如藉由實施本文中論述的範例方法100得到。範例半導體封裝251(或其任何一部分)可以例如與本文中論述的任何其它封裝(或其任何一部分)有一些共同的特性。
圖3A示出了說明穿過不與來自連接件233、235、237和239的突片之一相交的線截取的範例半導體封裝251的橫截面圖。在範例半導體封裝251中,示出囊封物245(例如環氧模製化合物等)覆蓋晶粒231的頂表面(例如非作用表面等)。囊封物245還覆蓋晶粒231的側表面。如本文中所闡述,囊封物245可以例如從晶粒231的側面橫向地延伸20um。並且,舉例來說,囊封物245可以從晶粒231的側面橫向地延伸25um或更少。在另一範例場景中,囊封物245可以從晶粒231的側面延伸100um或更少。
圖3B示出了說明範例半導體封裝251的透視圖的圖。在所圖示的範例中,晶粒231的作用表面從囊封物245中露出(例如從囊封物的
底部)。另外,突片(例如在方塊160處切塊之後剩餘的連接件233、235、237和239的部分)的各種表面從囊封物245中露出。舉例來說,在方塊160包括用同一個切割機構(例如雷射、鋸條、定向能量、蝕刻技術等)切割囊封物245和連接件233、235、237和239的實施方案中,連接件233、235、237和239的所得突片的端面可以從囊封物245的側表面露出,並且可以與囊封物245的側表面共面。此外,這樣所得的突片的底表面也可從囊封物245露出,其中這樣的底表面可以例如與囊封物245的底表面和晶粒231的底表面(例如作用表面等)共面。再者,可以用囊封物245覆蓋這樣所得的突片的頂表面連同晶粒231的頂表面,晶粒231的頂表面可以例如與突片的頂表面共面。
圖3C圖示出範例半導體封裝251的分解圖,例如用於更好地理解範例半導體封裝251的各種元件的相應形狀。舉例來說,圖3C示出了切斷連接件233、235、237和239剩餘的突片,每個突片從晶粒231的相應側表面橫向地延伸。如本文所論述,突片可以例如包括與晶粒231相同的高度(例如厚度)。並且,舉例來說,突片可包括20um並且在各種範例實施方案中25um或更小的長度(例如從晶粒231的側面延伸的距離)。另外,舉例來說,突片可包括100um或更小的長度。另外,舉例來說,突片可包括與高度尺寸相同的寬度尺寸。然而,在其它範例中,如圖3A-圖3C中所示,突片可包括比高度尺寸更窄的寬度尺寸。雖然突片通常顯示為相同的,但是應注意,突片可以彼此不同。舉例來說,對應於單一化列的突片可包括不同於對應於單一化分行的突片的尺寸(例如寬度尺寸等)。舉例來說,對應於具有相對較少晶粒的單一化切割道的突片可包括比對應於具有相對更
多晶粒的單一化切割道的突片更大(例如更寬等)的尺寸(例如寬度尺寸等)。
綜上所述,本公開的各種方面提供囊封半導體封裝及其生產方法。作為非限制性範例,可以藉由部分切塊晶圓、模製部分切塊的晶圓和完全切塊模製的並且部分切塊的晶圓,借此生產半導體封裝。雖然已經參考某些方面和範例描述了以上內容,但是所屬技術領域中具有通常知識者應理解,在不脫離本公開的範疇的情況下,可進行各種改變並可用等效物取代。另外,在不脫離本公開的範疇的情況下,可以進行許多修改以使特定情況或材料適應本公開的教示。因此,希望本公開不限於所公開的特定範例,而是本公開將包括落入所附申請專利範圍的範疇內的所有範例。
100‧‧‧範例方法的流程圖
105-195‧‧‧方塊
Claims (20)
- 一種製造半導體裝置的方法,所述方法包括:將晶圓固定到載體,所述晶圓包括多個半導體晶粒;將所述固定的晶圓部分地切塊;囊封所述部分切塊的晶圓;以及將所述囊封的部分切塊的晶圓切塊。
- 根據申請專利範圍第1項所述的方法,其中所述將晶圓固定到載體包括將所述晶圓附接到熱釋放膠帶。
- 根據申請專利範圍第1項所述的方法,其中所述將所述固定的晶圓部分地切塊包括部分地蝕刻所述固定的晶圓。
- 根據申請專利範圍第3項所述的方法,其中所述部分地蝕刻所述固定的晶圓包括:沿著第一單一化切割道的第一部分完全蝕刻穿過所述固定的晶圓;以及阻止沿著所述第一單一化切割道的第二部分蝕刻所述固定的晶圓。
- 根據申請專利範圍第1項所述的方法,其中所述將所述固定的晶圓部分地切塊包括留下從所述多個半導體晶粒中的第一晶粒延伸到所述多個半導體晶粒中的第二晶粒的晶圓材料的至少一個突片。
- 根據申請專利範圍第5項所述的方法,其中所述晶圓材料的至少一個突片從所述第一晶粒的側面的中間延伸到所述第二晶粒的側面的中間。
- 根據申請專利範圍第1項所述的方法,其中所述囊封所述部分切塊的 晶圓包括在模製化合物中囊封所述部分切塊的晶圓。
- 根據申請專利範圍第1項所述的方法,其中所述將所述囊封晶圓切塊包括切穿晶圓材料和囊封物。
- 根據申請專利範圍第1項所述的方法,其中所述將所述囊封的部分切塊的晶圓切塊包括形成切割線,所述切割線較窄於所述固定晶圓的所述部分切塊期間形成的蝕刻線。
- 根據申請專利範圍第1項所述的方法,其包括在所述將所述囊封的部分切塊的晶圓切塊之前從所述載體釋放所述囊封的部分切塊的晶圓。
- 一種製造半導體裝置的方法,所述方法包括:將晶圓固定到載體,所述晶圓包括多個半導體晶粒;藉由至少部分地沿著單一化切割道的第一部分完全蝕刻穿過所述固定晶圓,並且沿著所述單一化切割道的第二部分留下在所述多個半導體晶粒中的鄰近晶粒之間延伸並且連接鄰近晶粒的晶圓材料的連接件,以將所述固定晶圓部分地切塊;在模製化合物中囊封所述部分切塊的並且固定的晶圓;以及藉由至少部分地沿著所述整個單一化切割道完全鋸穿所述囊封的部分切塊的晶圓,將所述囊封的部分切塊的晶圓切塊。
- 根據申請專利範圍第11項所述的方法,其中所述將所述囊封的部分切塊的晶圓切塊包括沿著整個所述單一化切割道形成切割線,所述切割線較窄於在對所述固定晶圓的所述部分切塊期間沿著所述單一化切割道的所述第一部分形成的蝕刻線。
- 一種半導體裝置,其包括: 半導體晶粒,其包括:作用表面;與所述作用表面相對的非作用表面;多個側表面,其在所述作用表面與所述非作用表面之間延伸;以及突片,其從所述多個側表面中的第一側表面延伸;以及囊封物,其包圍所述半導體晶粒的至少所述側表面,其中所述突片的端面從所述囊封物中露出。
- 根據申請專利範圍第13項所述的半導體裝置,其中所述突片圍繞在所述第一側表面上。
- 根據申請專利範圍第13項所述的半導體裝置,其中所述突片的端面與所述囊封物的側表面共面。
- 根據申請專利範圍第13項所述的半導體裝置,其中所述突片包括與所述半導體晶粒的所述第一側表面相同的高度。
- 根據申請專利範圍第13項所述的半導體裝置,其中所述囊封物覆蓋所述半導體晶粒的所述非作用表面和所述突片的頂表面。
- 根據申請專利範圍第13項所述的半導體裝置,其中所述囊封物包括環氧模製化合物。
- 根據申請專利範圍第13項所述的半導體裝置,其中所述囊封物從所述半導體晶粒的所述多個側表面向外橫向地延伸不超過25um。
- 根據申請專利範圍第13項所述的半導體裝置,其中所述半導體晶粒包括:第二突片,其從所述多個側表面中的第二側表面延伸,其中所述第 二突片的端面從所述囊封物中露出;第三突片,其從所述多個側表面中的第三側表面延伸,其中所述第三突片的端面從所述囊封物中露出;以及第四突片,其從所述多個側表面中的第四側表面延伸,其中所述第四突片的端面從所述囊封物中露出。
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