TW201705293A - 用於3d共形處理的原子層製程腔室 - Google Patents
用於3d共形處理的原子層製程腔室 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 169
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims description 94
- 239000007789 gas Substances 0.000 claims description 24
- 150000003254 radicals Chemical class 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 16
- -1 halogen radical Chemical class 0.000 claims description 10
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- QDKSGHXRHXVMPF-UHFFFAOYSA-N 2,2-dimethylundecane Chemical compound CCCCCCCCCC(C)(C)C QDKSGHXRHXVMPF-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
本文所描述實施例係關於用於在半導體基板上形成或處理材料層之方法。在一個實施例中,用於執行原子層製程之方法包括輸送物質至處於第一溫度的基板之表面,繼之以將基板之表面尖峰退火至第二溫度以引發物質與基板之表面上的分子之間的反應。第二溫度高於第一溫度。藉由重複輸送及尖峰退火製程,在基板之表面上形成共形層或對基板之表面執行共形蝕刻製程。
Description
本文所描述實施例係關於半導體製造製程。更特定言之,揭示用於在半導體基板上形成或處理材料層的方法。
自從半導體元件面世數十年以來其幾何形狀已在尺寸上顯著減小。現代半導體製造設備通常生產具有45 nm、32 nm及28 nm特徵尺寸的元件,而新設備正在研製並實施來生產具有小於12 nm之尺寸的元件。另外,晶片架構正處於從二維(2D)到三維(3D)結構的轉折點,以便獲得效能更佳功率消更低的元件。因此,形成此等元件的材料之共形沉積正變得日益重要。
可在高溫下執行形成3D結構的材料之共形沉積。然而,減少的熱預算及更嚴格的臨界尺寸需求使得高溫熱製程不適用於進階的元件節點。在減少的熱預算下,可藉由使用電漿或光執行反應物鍵之預斷裂。然而,基於電漿或光產生的離子或自由基之製程大體上不為3D共形,因為存在電漿鞘及低壓(通常小於約5托)用於維持電漿。
因此,本技術領域中需要用於形成或處理材料層的改良方法。
本文所描述實施例係關於用於在半導體基板上形成或處理材料層之方法。在一個實施例中,方法包括輸送物質至基板之表面。基板處於第一溫度,且物質被吸附在基板之表面上。方法進一步包括將基板之表面加熱至第二溫度,且在第二溫度下,物質與基板之表面反應。方法進一步包括重複輸送及加熱製程。
在另一實施例中,方法包括輸送物質至基板之表面。基板處於第一溫度,且物質被吸附在基板之表面上。方法進一步包括將基板之表面加熱至第二溫度,且在第二溫度下,物質擴散至基板之表面中。方法進一步包括重複輸送及加熱製程。
在另一實施例中,方法包括將基板置放在製程腔室中,且輸送第一物質至基板之表面。基板處於第一溫度,且第一物質被吸附在基板之表面上。方法進一步包括移除未被吸附在基板之表面上的過量第一物質,且加熱基板之表面至第二溫度。在第二溫度下,第一物質與基板之表面反應。方法進一步包括重複輸送及加熱製程。
本文所描述實施例係關於用於在半導體基板上形成或處理材料層之方法。在一個實施例中,用於執行原子層製程之方法包括輸送物質至處於第一溫度的基板之表面,繼之以將基板之表面尖峰退火至第二溫度以引發物質與基板之表面上的分子之間的反應。第二溫度高於第一溫度。藉由重複輸送及尖峰退火製程,在基板之表面上形成共形層或對基板之表面執行共形蝕刻製程。
第1圖圖示根據各種實施例的處理序列100。處理序列100可為對基板之表面執行的原子層製程。處理序列100從方塊102開始。在方塊102處,輸送物質至基板之表面。基板可為任何適宜基板,諸如矽基板,且基板之表面可包括矽分子。在一些實施例中,可在基板上形成介電層(諸如氧化層),且基板之表面可包括氧化物分子。基板之表面可包括複數個特徵。可將基板安置在製程腔室之內部。在一個實施例中,製程腔室包括一個處理站。在另一實施例中,製程腔室包括兩個處理站。在其他實施例中,製程腔室包括兩個以上的處理站。可在具有兩個或更多個處理站的製程腔室中的一個處理站處執行物質至基板表面的輸送。
物質可為任何適宜物質,諸如一或更多種氣體或自由基。可在遠端形成自由基並隨後輸送至基板之表面。或者,可藉由激勵引入到製程腔室中的氣體來形成自由基。用於激勵製程腔室內的氣體之電漿源可為任何適宜電漿源,諸如電容耦合電漿源、電感耦合電漿源或微波電漿源。可將物質引入到基板之表面,同時將基板加熱或冷卻至第一溫度。在第一溫度下,物質不會與基板之表面上的分子反應。實情為,物質被吸附在基板之表面上,直至物質使表面飽和。基板之第一溫度高到足以引發物質被吸附在基板之表面上並低到足以避免物質與基板之表面上的分子之間的反應。在基板之表面處物質的飽和係一種自限製程,因為歸因於第一溫度下物質與基板之表面上的分子之間無反應。
在方塊104處,對基板執行尖峰退火製程。尖峰退火製程能夠將基板表面之溫度快速增加至第二溫度,而無需實質上增加基板剩餘部分之溫度。可在相同製程腔室中對基板執行尖峰退火製程。在一個實施例中,製程腔室包括兩個處理站,在一個處理站處執行物質至基板表面的輸送並將基板移送至執行尖峰退火製程的另一處理站。可在輸送物質至基板之表面之後且在尖峰退火製程之前執行淨化製程,以便移除未被吸附在基板之表面上的過量物質。
停留時間或利用閃熱源(諸如雷射或閃光燈)加熱基板的時間可為短時間,諸如約1微秒。由於停留時間短及基板主體之溫度並未實質增加,確保在冷卻期期間熱量穿過基板主體之快速耗散。在基板表面處自第二溫度返回至起始溫度的冷卻期亦為短時間,諸如自約10至100微秒。
當將基板之表面快速加熱至第二溫度(諸如1000攝氏度以上)時,被吸附在基板之飽和表面上的物質變得與基板之表面之分子具有反應性。第二溫度的範圍可自約1000攝氏度至約1300攝氏度。在一個實施例中,使物質擴散至基板之表面中。在另一實施例中,物質藉由與基板之表面的一部分形成產物而共形脫離基板之表面的此部分。在又一實施例中,將第二物質引入到製程腔室中,且在第二溫度下,第二物質與基板之表面上的物質反應,從而在基板之表面上形成共形層。
接著,在方塊106處,重複方塊102及104處描述的製程。作為方塊102及104處描述之重複製程的結果,可在基板之表面上形成共形層或共形層擴散至基板之表面中。或者,重複方塊102及104處描述的製程可共形移除表面的一部分。
第2A圖至第2C圖圖示根據一個實施例的處理序列100。如第2A圖所示,基板(未圖示)之表面204可包括特徵202。如第2A圖所示,特徵202由二氧化矽製成。然而,特徵202之材料可不限於二氧化矽。在一些實施例中,特徵202由矽製成。在製程腔室內的基板支撐件上置放具有表面204的基板。在一些實施例中,在製程腔室中的第一處理站處的基板支撐件上置放具有表面204的基板。可已藉由清洗製程清洗表面204以自表面204移除任何污染物。清洗製程可為任何適宜清洗製程,諸如使用基於鹵素的清洗氣體或自由基(諸如基於氯或氟的氣體或自由基)之清洗製程。基板可藉由形成於基板支撐件中的溫度控制裝置達到第一溫度。第一溫度可基於物質類型及表面204之材料而變化。第一溫度足夠低,使得物質與表面204之間無反應。
如第2B圖所示,將物質206引入到製程腔室中或製程腔室之處理站中。物質206吸附在表面204上,直至物質206使表面204飽和。又,物質可為任何適宜物質,諸如一或更多種氣體或自由基。在一個實施例中,物質206為含氮自由基,諸如NH*
自由基。在另一實施例中,物質206為含硼物質,諸如含硼氣體或含硼自由基。含硼自由基可為B*
、BHx *
或任何適宜含硼自由基。
在一個實施例中,藉由將含硼氣體引入到製程腔室之處理區域中來形成物質206,製程腔室包括安置有表面204的基板。含硼氣體可為任何適宜含硼氣體(諸如B2
H6
)。可藉由電漿源(諸如電容耦合電漿源、電感耦合電漿源或微波電漿源)活化含硼氣體以形成含有物質206的電漿。物質206可為含硼自由基,諸如B*
或BHx *
,其中x可為1、2或3。在另一實施例中,藉由使含硼氣體流動到耦接至處理腔室的遠端電漿源來形成物質206,製程腔室包括安置有表面204的基板。含硼氣體可為任何適宜含硼氣體(諸如B2
H6
)。可藉由遠端電漿源活化含硼氣體來形成含有物質206的電漿。物質206可為含硼自由基,諸如B*
或BHx *
,其中x可為1、2或3。使物質206流動到處理腔室之處理區域中。
接著,如第2C圖所示,將表面204之溫度快速增加至第二溫度,且物質206變得與表面204之分子具有反應性。在一個實施例中,使物質206擴散至特徵202中。可藉由尖峰退火製程快速增加基板之表面204之溫度。可在相同製程腔室中執行尖峰退火製程。在一些實施例中,將基板移送至處理腔室內的第二處理站,且在第二處理站處執行尖峰退火製程。作為重複第2B圖及第2C圖所描述之製程的結果,將特徵202之部分208改質(諸如氮化)。
第3A圖至第3C圖圖示根據另一實施例的處理序列100。如第3A圖所示,基板(未圖示)之表面304可包括特徵302。如第3A圖所示,特徵302由矽製成。然而,特徵302之材料可不限於矽。在製程腔室內的基板支撐件上置放具有表面304的基板。在一些實施例中,在製程腔室中的第一處理站處的基板支撐件上置放具有表面304的基板。基板可藉由形成於基板支撐件中的溫度控制裝置達到第一溫度。第一溫度可基於物質類型及表面304之材料而變化。第一溫度足夠低,使得物質與表面304之間無反應。
如第3B圖所示,將物質306引入到製程腔室中或製程腔室之處理站中。物質306吸附在表面304上,直至物質306使表面304飽和。又,物質可為任何適宜反應性物質,諸如一或更多種氣體或自由基。在一個實施例中,物質306為Br*
或其他鹵素自由基。
接著,如第3C圖所示,將表面304之溫度快速增加至第二溫度,且物質306變得與表面304之分子具有反應性。在一個實施例中,物質306及表面304之矽分子形成產物308(諸如SiBrx
),且自表面304移除產物308。可藉由尖峰退火製程快速增加基板之表面304之溫度。可在相同製程腔室中執行尖峰退火製程。在一些實施例中,將基板移送至處理腔室內的第二處理站,且在第二處理站處執行尖峰退火製程。作為重複第3B圖及第3C圖所描述之製程的結果,可對表面304執行共形蝕刻製程,且可移除具有實質均勻厚度的特徵302之一部分。
第4A圖至第4C圖圖示根據另一實施例的處理序列100。如第4A圖所示,基板(未圖示)之表面304可包括特徵302。如第4A圖所示,特徵302由矽製成。然而,特徵302之材料可不限於矽。在製程腔室內的基板支撐件上置放具有表面304的基板。在一些實施例中,在製程腔室中的第一處理站處的基板支撐件上置放具有表面304的基板。基板可藉由形成於基板支撐件中的溫度控制裝置達到第一溫度。第一溫度可基於物質類型及表面304之材料而變化。第一溫度足夠低,使得物質與表面304之間無反應。
如第4B圖所示,將物質406引入到製程腔室中或製程腔室之處理站中。物質406吸附在表面304上,直至物質406使表面304飽和。又,物質可為任何適宜物質,諸如一或更多種氣體或自由基。在一個實施例中,物質406為含氮自由基或氣體,諸如NH*
自由基或氨氣。
接著,如第3C圖所示,使表面304之溫度快速增加至第二溫度,且將第二物質408引入到製程腔室或製程腔室之第二處理站。第二物質408可為三甲基矽烷。在第二溫度下,物質406變得與第二物質408具有反應性。在一個實施例中,物質406及第二物質408在表面304上形成產物(諸如SiCN)。可藉由尖峰退火製程快速增加基板之表面304之溫度,使得表面304達到第二溫度。可在相同製程腔室中執行尖峰退火製程。在一些實施例中,將基板移送至處理腔室內的第二處理站,且在第二處理站處執行尖峰退火製程。作為重複第4B圖及第4C圖中描述之製程的結果,可在表面304上形成共形層。共形層可為SiCN。
第5圖係根據一個實施例的製程腔室500之示意性橫截面視圖。可在製程腔室500中執行處理序列100。製程腔室500包括底部502、側壁504及頂部506,從而界定處理區域507。可在處理區域507中安置基板支撐件508,且可在基板支撐件508上安置基板512。可在基板支撐件508中形成溫度控制元件510(諸如加熱元件或冷卻通道)以便控制基板512之溫度。可在基板支撐件508上方安置閃熱源514以便執行尖峰退火製程。閃熱源514可包括複數個雷射或閃光燈。可在側壁504中形成物質注射埠516,且可將物質源518連接至物質注射埠516。可在製程腔室500中執行上文所描述之物質至基板表面的輸送及尖峰退火之序列。製程腔室500可包括淨化氣體注射埠(未圖示),將此淨化氣體注射埠連接至淨化氣源(未圖示)以便淨化處理區域507。
第6圖係根據一個實施例的製程腔室600之示意性橫截面視圖。可在製程腔室600中執行處理序列100。製程腔室600包括底部602、側壁604及頂部606。可在製程腔室600中安置分隔件608且可形成兩個處理站610、611。分隔件608可為實體分隔件或空氣幕。第一處理站610可包括基板支撐件612及嵌入基板支撐件612中的溫度控制元件614。溫度控制元件614可與第5圖所描述之溫度控制元件510相同。可在第一處理站610處的側壁中形成物質注射埠622,且可將物質源624耦接至物質注射埠622。第一處理站610可進一步包括淨化氣體注射埠(未圖示),將此淨化氣體注射埠連接至淨化氣源(未圖示)以便淨化處理站610。
第二處理站611可包括基板支撐件618以便支撐基板616。基板支撐件618可包括溫度控制元件(未圖示),此溫度控制元件與溫度控制元件614相同。可在基板支撐件618上方安置閃熱源620。閃熱源620可與第5圖所描述之閃熱源514相同。第二處理站611可進一步包括物質注射埠626,且可將物質源628耦接至物質注射埠626。可使用物質源628及物質注射埠626輸送第二物質至基板616之表面。可將基板616移動至第一處理站610及第二處理站611,以便對基板執行處理序列100。
第7圖係根據一個實施例的製程腔室700之示意性橫截面俯視圖。製程腔室700可包括複數個處理站702、704、706、708、710、712(圖示六個,但不限於六個)。每一處理站702、704、706、708、710、712包括用於支撐基板(未圖示)的基板固持件714。基板固持件714可形成於基板支撐件716上。基板支撐件716可包括溫度控制元件(未圖示),以便控制安置在基板固持件714上的基板之溫度。可藉由分隔件718分離複數個處理站702、704、706、708、710、712,分隔件可為實體分隔件或空氣幕。複數個處理站中的一些處理站可能夠執行輸送物質至處於第一溫度的基板之表面,而剩餘處理站可能夠執行尖峰退火製程。在一個實施例中,在處理站702、706、710處執行物質至基板表面的輸送。在物質使基板之表面飽和之後,基板支撐件716旋轉以在可執行尖峰退火製程的處理站704、708、712處置放基板。可旋轉基板支撐件716以在選定處理站處置放基板以便執行處理序列100。
儘管前述係針對實施例,但是在不脫離本發明之基本範疇的情況下可設計出其他及進一步實施例,且本發明之範疇由隨後之申請專利範圍決定。
100‧‧‧處理序列
102‧‧‧方塊
104‧‧‧方塊
106‧‧‧方塊
202‧‧‧特徵
204‧‧‧表面
206‧‧‧物質
208‧‧‧部分
302‧‧‧特徵
304‧‧‧表面
306‧‧‧物質
308‧‧‧產物
406‧‧‧物質
408‧‧‧第二物質
500‧‧‧製程腔室
502‧‧‧底部
504‧‧‧側壁
506‧‧‧頂部
507‧‧‧處理區域
508‧‧‧基板支撐件
510‧‧‧溫度控制元件
512‧‧‧基板
514‧‧‧閃熱源
516‧‧‧物質注射埠
518‧‧‧物質源
600‧‧‧製程腔室
602‧‧‧底部
604‧‧‧側壁
606‧‧‧頂部
608‧‧‧分隔件
610‧‧‧第一處理站
611‧‧‧第二處理站
612‧‧‧基板支撐件
614‧‧‧溫度控制元件
616‧‧‧基板
618‧‧‧基板支撐件
620‧‧‧閃熱源
622‧‧‧物質注射埠
624‧‧‧物質源
626‧‧‧物質注射埠
628‧‧‧物質源
700‧‧‧製程腔室
702‧‧‧處理站
704‧‧‧處理站
706‧‧‧處理站
708‧‧‧處理站
710‧‧‧處理站
712‧‧‧處理站
714‧‧‧基板固持件
716‧‧‧基板支撐件
718‧‧‧分隔件
102‧‧‧方塊
104‧‧‧方塊
106‧‧‧方塊
202‧‧‧特徵
204‧‧‧表面
206‧‧‧物質
208‧‧‧部分
302‧‧‧特徵
304‧‧‧表面
306‧‧‧物質
308‧‧‧產物
406‧‧‧物質
408‧‧‧第二物質
500‧‧‧製程腔室
502‧‧‧底部
504‧‧‧側壁
506‧‧‧頂部
507‧‧‧處理區域
508‧‧‧基板支撐件
510‧‧‧溫度控制元件
512‧‧‧基板
514‧‧‧閃熱源
516‧‧‧物質注射埠
518‧‧‧物質源
600‧‧‧製程腔室
602‧‧‧底部
604‧‧‧側壁
606‧‧‧頂部
608‧‧‧分隔件
610‧‧‧第一處理站
611‧‧‧第二處理站
612‧‧‧基板支撐件
614‧‧‧溫度控制元件
616‧‧‧基板
618‧‧‧基板支撐件
620‧‧‧閃熱源
622‧‧‧物質注射埠
624‧‧‧物質源
626‧‧‧物質注射埠
628‧‧‧物質源
700‧‧‧製程腔室
702‧‧‧處理站
704‧‧‧處理站
706‧‧‧處理站
708‧‧‧處理站
710‧‧‧處理站
712‧‧‧處理站
714‧‧‧基板固持件
716‧‧‧基板支撐件
718‧‧‧分隔件
因此,以可詳細理解本發明之上述特徵之方式,可參照實施例獲得上文簡要概述之本發明之更特定描述,其中一些實施例圖示於隨附圖式中。然而,應注意,隨附圖式僅圖示出本發明之典型實施例,且因此此等圖式不欲視為本發明範疇之限制,因為本發明可允許其他同等有效之實施例。
第1圖圖示根據各種實施例的處理序列。
第2A圖至第2C圖圖示根據一個實施例的製程式列。
第3A圖至第3C圖圖示根據另一實施例的製程式列。
第4A圖至第4C圖圖示根據另一實施例的製程式列。
第5圖係根據一個實施例的製程腔室之示意性橫截面視圖。
第6圖係根據另一實施例的製程腔室之示意性橫截面視圖。
第7圖係根據另一實施例的製程腔室之示意性橫截面俯視圖。
為了促進理解,相同元件符號已儘可能用於指代諸圖共有之相同元件。應設想,一個實施例中所揭示之元件可有益地用於其他實施例,而無需贅述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序注記) 無
(請換頁單獨記載) 無
100‧‧‧處理序列
102‧‧‧方塊
104‧‧‧方塊
106‧‧‧方塊
Claims (20)
- 一種方法,該方法包含以下步驟: 輸送一物質至一基板之一表面,其中該基板處於一第一溫度,其中該物質被吸附在該基板之該表面上; 將該基板之該表面加熱至一第二溫度,其中在該第二溫度下,該物質與該基板之該表面反應;以及 重複該輸送及該加熱製程。
- 如請求項1所述之方法,其中該第二溫度高於該第一溫度,且該第二溫度的範圍自約1000攝氏度至約1300攝氏度。
- 如請求項1所述之方法,其中該物質包含自由基。
- 如請求項1所述之方法,其中該物質包含一或更多種氣體。
- 如請求項1所述之方法,其中該物質包含鹵素自由基或含氮自由基或氣體。
- 如請求項5所述之方法,其中該物質為鹵素自由基且該基板之該表面包含矽,且在該第二溫度下,該等鹵素自由基與矽反應以形成一產物,其中自該基板之該表面移除該產物。
- 如請求項6所述之方法,其中該重複該輸送及加熱製程之步驟係一共形蝕刻製程。
- 一種方法,該方法包含以下步驟: 輸送一物質至一基板之一表面,其中該基板處於一第一溫度,其中該物質被吸附在該基板之該表面上; 將該基板之該表面加熱至一第二溫度,其中在該第二溫度下,該物質擴散至該基板之該表面;以及 重複該輸送及該加熱製程。
- 如請求項8所述之方法,其中該第二溫度高於該第一溫度,且該第二溫度的範圍自約1000攝氏度至約1300攝氏度。
- 如請求項8所述之方法,其中該物質包含自由基。
- 如請求項10所述之方法,其中該物質包含含氮自由基或含硼自由基。
- 如請求項11所述之方法,其中該基板之該表面包含二氧化矽或矽。
- 如請求項12所述之方法,其中該重複該輸送及加熱製程之步驟係一氮化製程。
- 一種方法,該方法包含以下步驟: 將一基板置放在一製程腔室中; 輸送一物質至該基板之一表面,其中該基板處於一第一溫度,其中該物質被吸附在該基板之該表面上; 移除未被吸附在該基板之該表面上的過量物質; 將該基板之該表面加熱至一第二溫度,其中該第二溫度高於該第一溫度,其中在該第二溫度下,該物質與該基板之該表面反應;以及 重複該輸送及該加熱製程。
- 如請求項14所述之方法,其中在該製程腔室之一第一處理站處執行該物質至該基板之該表面的該輸送步驟,及在該製程腔室之一第二處理站處執行該基板之該表面的該加熱步驟。
- 如請求項15所述之方法,其中該製程腔室包括複數個處理站。
- 如請求項16所述之方法,其中該製程腔室包括六個處理站,其中三個處理站用於輸送該物質至該基板之該表面的步驟且三個處理站用於加熱該基板之該表面的步驟。
- 如請求項17所述之方法,進一步包含以下步驟:在一基板支撐件上置放六個基板且將該基板支撐件置放在該製程腔室中。
- 如請求項18所述之方法,進一步包含以下步驟:旋轉該基板支撐件以在該製程腔室內的一相應處理站處置放一基板。
- 如請求項14所述之方法,其中該第二溫度的範圍自約1000攝氏度至約1300攝氏度。
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KR20020083767A (ko) * | 2001-04-30 | 2002-11-04 | 주식회사 하이닉스반도체 | 선택적 에피택셜 성장 공정에서의 기판 세정 방법 |
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CN111211074B (zh) * | 2013-04-30 | 2023-09-22 | 应用材料公司 | 具有空间分布的气体通道的气流控制衬垫 |
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