CN113981414A - 用于3d共形处理的原子层处理腔室 - Google Patents

用于3d共形处理的原子层处理腔室 Download PDF

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CN113981414A
CN113981414A CN202111142728.4A CN202111142728A CN113981414A CN 113981414 A CN113981414 A CN 113981414A CN 202111142728 A CN202111142728 A CN 202111142728A CN 113981414 A CN113981414 A CN 113981414A
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processing chamber
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刘炜
阿布拉什·J·马约尔
菲利普·斯托特
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Applied Materials Inc
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Abstract

本文所描述实施方式涉及用于在半导体基板上形成或处理材料层的方法。在一个实施方式中，用于执行原子层工艺方法包括输送物质至处于第一温度的基板的表面，随后将基板的表面尖峰退火至第二温度以引发物质与基板的表面上的分子之间的反应。第二温度高于第一温度。通过重复输送及尖峰退火工艺，在基板的表面上形成共形层或对基板的表面执行共形蚀刻工艺。

Description

用于3D共形处理的原子层处理腔室
本申请是申请日为2016年2月25日、申请号为201680016568.X、发明名称为“用于3D共形处理的原子层处理腔室”的发明专利申请的分案申请。
技术领域
本文所描述的实施方式涉及半导体制造工艺。更特定而言，公开用于在半导体基板上形成或处理材料层的方法。
背景技术
自从半导体元件面世数十年以来其几何形状已在尺寸上显著减小。现代半导体制造设备通常生产具有45nm、32nm及28nm特征尺寸的器件，而新设备正在研制并实施来生产具有小于12nm的尺寸的器件。另外，芯片架构正处于从二维(2D)到三维(3D)结构的转折点，以适于更佳的性能、功率消耗更低的器件。因此，形成这些器件的材料的共形沉积正变得日益重要。
可在高温下执行形成3D结构的材料的共形沉积。然而，减少的热收支(heatbudget)及更严格的临界尺寸需求使得高温热工艺不适用于进阶的器件节点(nodes)。在减少的热收支下，可通过使用等离子体或光执行反应物键的预断裂。然而，由于存在等离子体鞘及低压(通常小于约5托)以维持等离子体，基于等离子体或光产生离子或自由基的工艺一般不为3D共形。
因此，本技术领域中需要用于形成或处理材料层的改良方法。
发明内容
本文所描述的实施方式涉及用于在半导体基板上形成或处理材料层的方法。在一个实施方式中，方法包括输送物质至基板的表面。基板处于第一温度，且物质被吸附在基板的表面上。方法进一步包括将基板的表面加热至第二温度，且在第二温度下，物质与基板的表面反应。方法进一步包括重复输送及加热工艺。
在另一实施方式中，方法包括输送物质至基板的表面。基板处于第一温度，且物质被吸附在基板的表面上。方法进一步包括将基板的表面加热至第二温度，且在第二温度下，物质扩散至基板的表面中。方法进一步包括重复输送及加热工艺。
在另一实施方式中，方法包括将基板置放在处理腔室中，且输送第一物质至基板的表面。基板处于第一温度，且第一物质被吸附在基板的表面上。方法进一步包括移除未被吸附在基板的表面上的过量第一物质，且加热基板的表面至第二温度。在第二温度下，第一物质与基板的表面反应。方法进一步包括重复输送及加热工艺。
附图说明
以上简要概述的本公开内容的上述详述特征可以被详细理解的方式、以及本公开内容的更特定描述，可以通过参考实施方式获得，其中一些实施方式绘示于附图中。然而，应注意，附图仅绘示出本公开内容的典型实施方式，因而这些附图不应视为对本发明的范围的限制，因为本公开内容可允许其他等同有效的实施方式。
图1图解根据各种实施方式的处理序列。
图2A至图2C图示根据一个实施方式的工艺序列。
图3A至图3C图示根据另一实施方式的工艺序列。
图4A至图4C图示根据另一实施方式的工艺序列。
图5为根据一个实施方式的处理腔室的示意性截面图。
图6为根据另一实施方式的处理腔室的示意性截面图。
图7为根据另一实施方式的处理腔室的示意性截面俯视图。
为了便于理解，已尽可能地使用相同附图符号标示附图中共通的相同元件。考虑到，一个实施方式中所公开的元件在没有特定描述下可有益地运用于其他实施方式。
具体实施方式
本文所描述的实施方式涉及用于在半导体基板上形成或处理材料层的方法。在一个实施方式中，用于执行原子层工艺的方法包括输送物质至处于第一温度的基板的表面，随后将基板的表面尖峰退火至第二温度以引发物质与基板的表面上的分子之间的反应。第二温度高于第一温度。通过重复输送及尖峰退火工艺，在基板的表面上形成共形层或对基板的表面执行共形蚀刻工艺。
图1图解根据各种实施方式的处理序列100。处理序列100可为对基板的表面执行的原子层工艺。处理序列100从方块102开始。在方块102处，输送物质至基板的表面。基板可为任何适宜基板，诸如硅基板，且基板的表面可包括硅分子。在一些实施方式中，可在基板上形成介电层，诸如氧化层，且基板的表面可包括氧化物分子。基板的表面可包括多个特征。可将基板安置在处理腔室的内部。在一个实施方式中，处理腔室包括一个处理站。在另一实施方式中，处理腔室包括两个处理站。在其他实施方式中，处理腔室包括多于两个的处理站。可在具有两个或更多个处理站的处理腔室中的一个处理站处执行物质至基板表面的输送。
物质可为任何适宜物质，诸如一或多种气体或自由基。可在远端形成自由基并随后输送至基板的表面。或者，可通过激励引入到处理腔室中的气体来形成自由基。用于激励处理腔室内的气体的等离子体源可为任何适宜等离子体源，诸如电容耦合等离子体源、电感耦合等离子体源或微波等离子体源。可将物质引入到基板的表面，同时将基板加热或冷却至第一温度。在第一温度下，物质不会与基板的表面上的分子反应。取而代之，物质被吸附在基板的表面上，直至物质使表面饱和。基板的第一温度高到足以引发物质被吸附在基板的表面上并低到足以避免物质与基板的表面上的分子之间的反应。在基板的表面处物质的饱和为一种自限制工艺，因为由第一温度导致的物质与基板的表面上的分子之间无反应。
在方块104处，对基板执行尖峰退火工艺。尖峰退火工艺能够将基板表面的温度快速增加至第二温度，而无需实质上增加基板剩余部分的温度。可在相同处理腔室中对基板执行尖峰退火工艺。在一个实施方式中，处理腔室包括两个处理站，在一个处理站处执行物质至基板表面的输送，以及将基板移送至执行尖峰退火工艺的另一处理站。可在输送物质至基板的表面之后且在尖峰退火工艺之前执行净化工艺，从而移除未被吸附在基板的表面上的过量物质。
停留时间或利用(诸如激光器或闪光灯)加热基板的时间可为短时间，诸如约1微秒。由于停留时间短及基板主体的温度并未实质增加，确保在冷却期期间热量穿过基板主体的快速耗散。在基板表面处自第二温度返回至起始温度的冷却期亦为短时间，诸如自约10微秒至100微秒。
当将基板的表面快速加热至第二温度(诸如1000摄氏度以上)时，被吸附在基板的饱和表面上的物质变得与基板的表面的分子具有反应性。第二温度的范围可自约1000摄氏度至约1300摄氏度。在一个实施方式中，使物质扩散至基板的表面中。在另一实施方式中，物质通过与基板的表面的一部分形成产物而共形脱离基板的表面的此部分。在又一实施方式中，将第二物质引入到处理腔室中，且在第二温度下，第二物质与基板的表面上的物质反应，以在基板的表面上形成共形层。
接着，在方块106处，重复方块102及104处描述的工艺。作为方块102及104处描述的重复工艺的结果，可在基板的表面上形成共形层，或者共形层可扩散至基板的表面中。或者，重复方块102及104处描述的工艺可共形地移除表面的一部分。
图2A至图2C图示根据一个实施方式的处理序列100。如图2A所示，基板(未示出)的表面204可包括特征202。如图2A所示，特征202由二氧化硅制成。然而，特征202的材料可不限于二氧化硅。在一些实施方式中，特征202由硅制成。在处理腔室内的基板支撑件上置放具有表面204的基板。在一些实施方式中，在处理腔室中的第一处理站处的基板支撑件上置放具有表面204的基板。可已经由清洁工艺清洁表面204以自表面204移除任何污染物。清洁工艺可为任何适宜清洁工艺，诸如使用基于卤素的清洁气体或自由基(诸如基于氯或氟的气体或自由基)的清洁工艺。基板可通过形成于基板支撑件中的温度控制装置达到第一温度。第一温度可基于物质类型及表面204的材料而变化。第一温度足够低，使得物质与表面204之间无反应。
如图2B所示，将物质206引入到处理腔室中或处理腔室的处理站中。物质206吸附在表面204上，直至物质206使表面204饱和。又，物质可为任何适宜物质，诸如一或多种气体或自由基。在一个实施方式中，物质206为含氮自由基，诸如NH*自由基。在另一实施方式中，物质206为含硼物质，诸如含硼气体或含硼自由基。含硼自由基可为B*、BHx*或任何适宜含硼自由基。
在一个实施方式中，通过将含硼气体引入到处理腔室的处理区域中来形成物质206，处理腔室包括安置在处理腔室中的具有表面204的基板。含硼气体可为任何适宜含硼气体,诸如B2H6。可由等离子体源(诸如电容耦合等离子体源、电感耦合等离子体源或微波等离子体源)活化含硼气体以形成含有物质206的等离子体。物质206可为含硼自由基，诸如B*或BHx*，其中x可为1、2或3。在另一实施方式中，通过使含硼气体流动到耦接至处理腔室的＝远程等离子体源来形成物质206，处理腔室包括安置在其中的具有表面204的基板。含硼气体可为任何适宜含硼气体(诸如B2H6)。可由远程等离子体源活化含硼气体来形成含有物质206的等离子体。物质206可为含硼自由基，诸如B*或BHx*，其中x可为1、2或3。使物质206流动到处理腔室的处理区域中。
接着，如图2C所示，将表面204的温度快速增加至第二温度，且物质206变得与表面204的分子具有反应性。在一个实施方式中，使物质206扩散至特征202中。可由尖峰退火工艺快速增加基板的表面204的温度。可在相同处理腔室中执行尖峰退火工艺。在一些实施方式中，将基板移送至处理腔室内的第二处理站，且在第二处理站处执行尖峰退火工艺。作为重复图2B及图2C所描述的工艺的结果，对特征202的部分208改性，诸如氮化。
图3A至图3C图示根据另一实施方式的处理序列100。如图3A所示，基板(未示出)的表面304可包括特征302。如图3A所示，特征302由硅制成。然而，特征302的材料可不限于硅。在处理腔室内的基板支撑件上置放具有表面304的基板。在一些实施方式中，在处理腔室中的第一处理站处的基板支撑件上置放具有表面304的基板。基板可通过形成于基板支撑件中的温度控制装置达到第一温度。第一温度可基于物质类型及表面304的材料而变化。第一温度足够低，因此物质与表面304之间无反应。
如图3B所示，将物质306引入到处理腔室中或处理腔室的处理站中。物质306吸附在表面304上，直至物质306使表面304饱和。又，物质可为任何适宜反应性物质，诸如一或多种气体或自由基。在一个实施方式中，物质306为Br*或其他卤素自由基。
接着，如图3C所示，将表面304的温度快速增加至第二温度，且物质306变得与表面304的分子具有反应性。在一个实施方式中，物质306及表面304的硅分子形成产物308,诸如SiBrx，且自表面304移除产物308。可由尖峰退火工艺快速增加基板的表面304的温度。可在相同处理腔室中执行尖峰退火工艺。在一些实施方式中，将基板移送至处理腔室内的第二处理站，且在第二处理站处执行尖峰退火工艺。作为重复图3B及图3C所描述的工艺的结果，可对表面304执行共形蚀刻工艺，且可移除具有实质均匀厚度的特征302的一部分。
图4A至图4C图示根据另一实施方式的处理序列100。如图4A所示，基板(未示出)的表面304可包括特征302。如图4A所示，特征302由硅制成。然而，特征302的材料可不限于硅。在处理腔室内的基板支撑件上置放具有表面304的基板。在一些实施方式中，在处理腔室中的第一处理站处的基板支撑件上置放具有表面304的基板。基板可由形成于基板支撑件中的温度控制装置达到第一温度。第一温度可基于物质类型及表面304的材料而变化。第一温度足够低，因此物质与表面304之间无反应。
如图4B所示，将物质406引入到处理腔室中或处理腔室的处理站中。物质406吸附在表面304上，直至物质406使表面304饱和。又，物质可为任何适宜物质，诸如一或多种气体或自由基。在一个实施方式中，物质406为含氮自由基或气体，诸如NH*自由基或氨气。
接着，如图4C所示，使表面304的温度快速增加至第二温度，且将第二物质408引入到处理腔室或处理腔室的第二处理站。第二物质408可为三甲基硅烷。在第二温度下，物质406变得与第二物质408具有反应性。在一个实施方式中，物质406及第二物质408在表面304上形成产物，诸如SiCN。可由尖峰退火工艺快速增加基板的表面304的温度，使得表面304达到第二温度。可在相同处理腔室中执行尖峰退火工艺。在一些实施方式中，将基板移送至处理腔室内的第二处理站，且在第二处理站处执行尖峰退火工艺。作为重复图4B及图4C中描述的工艺的结果，可在表面304上形成共形层。共形层可为SiCN。
图5是根据一个实施方式的处理腔室500的示意性截面图。可在处理腔室500中执行处理序列100。处理腔室500包括底部502、侧壁504及顶部506，以界定处理区域507。可在处理区域507中安置基板支撑件508，且可在基板支撑件508上安置基板512。可在基板支撑件508中形成温度控制元件510(诸如加热元件或冷却通道)以用于控制基板512的温度。可在基板支撑件508上方安置闪热源514以用于执行尖峰退火工艺。闪热源514可包括多个激光器或闪光灯。可在侧壁504中形成物质注射口516，且可将物质源518连接至物质注射口516。可在处理腔室500中执行上文所描述的物质至基板表面的输送及尖峰退火的序列。处理腔室500可包括净化气体注射口(未示出)，将此净化气体注射口连接至净化气源(未示出)以用于净化处理区域507。
图6是根据一个实施方式的处理腔室600的示意性截面图。可在处理腔室600中执行处理序列100。处理腔室600包括底部602、侧壁604及顶部606。可在处理腔室600中安置分隔件608且可形成两个处理站610、611。分隔件608可为实体分隔件或空气幕。第一处理站610可包括基板支撑件612及嵌入基板支撑件612中的温度控制元件614。温度控制元件614可与图5所描述的温度控制元件510相同。可在第一处理站610处的侧壁中形成物质注射口622，且可将物质源624耦接至物质注射口622。第一处理站610可进一步包括净化气体注射口(未示出)，将此净化气体注射口连接至净化气源(未示出)以用于净化处理站610。
第二处理站611可包括基板支撑件618以用于支撑基板616。基板支撑件618可包括温度控制元件(未示出)，此温度控制元件与温度控制元件614相同。可在基板支撑件618上方安置闪热源620。闪热源620可与图5所描述的闪热源514相同。第二处理站611可进一步包括物质注射口626，且可将物质源628耦接至物质注射口626。可使用物质源628及物质注射口626输送第二物质至基板616的表面。可将基板616移动至第一处理站610及第二处理站611，从而对基板执行处理序列100。
图7是根据一个实施方式的处理腔室700的示意性截面俯视图。处理腔室700可包括多个处理站702、704、706、708、710、712(示出六个，但不限于六个)。每一处理站702、704、706、708、710、712包括用于支撑基板(未示出)的基板固持件714。基板固持件714可形成于基板支撑件716上。基板支撑件716可包括温度控制元件(未示出)，以用于控制安置在基板固持件714上的基板的温度。可由分隔件718分离多个处理站702、704、706、708、710、712，分隔件可为实体分隔件或空气幕。多个处理站中的一些处理站可以有能力执行输送物质至处于第一温度的基板的表面，而剩余处理站可以有能力执行尖峰退火工艺。在一个实施方式中，在处理站702、706、710处执行物质至基板表面的输送。在物质使基板的表面饱和之后，转动基板支撑件716以在可执行尖峰退火工艺的处理站704、708、712处置放基板。可转动基板支撑件716以在选定处理站处置放基板从而执行处理序列100。
尽管前述针对实施方式，但是在不脱离本发明的基本范围的前提下可设计出其他的及进一步实施方式，且本发明的范围由随附的权利要求书来确定。

Claims (12)

1.一种处理腔室，包括：
底部；
侧壁；
顶部，其中所述底部、所述侧壁及所述顶部界定处理区域；
注射口，所述注射口形成于所述侧壁中并通往所述处理区域；
基板支撑件，所述基板支撑件设置在所述处理区域中；
温度控制元件，所述温度控制元件设置在所述基板支撑件中；
闪热源，所述闪热源设置在所述基板支撑件上方，其中所述闪热源包括多个激光器；以及
原子团气体源，所述原子团气体源耦接至所述注射口。
2.根据权利要求1所述的处理腔室，其中所述温度控制元件包括加热元件。
3.根据权利要求1所述的处理腔室，进一步包括净化气体源。
4.根据权利要求1所述的处理腔室，进一步包括分隔件，所述分隔件设置在所述处理区域中。
5.根据权利要求4所述的处理腔室，其中所述分隔件形成两个处理站。
6.根据权利要求4所述的处理腔室，其中所述分隔件包括实体分隔件或空气幕。
7.一种处理腔室，包括：
底部；
侧壁；
顶部，其中所述底部、所述侧壁及所述顶部界定处理区域；
注射口，所述注射口形成于所述侧壁中并通往所述处理区域；
基板支撑件，所述基板支撑件设置在所述处理区域中；
温度控制元件，所述温度控制元件设置在所述基板支撑件中；
闪热源，所述闪热源设置在所述基板支撑件上方，其中所述闪热源包括多个灯；以及
原子团气体源，所述原子团气体源耦接至所述注射口。
8.根据权利要求7所述的处理腔室，其中所述温度控制元件包括加热元件。
9.根据权利要求7所述的处理腔室，进一步包括净化气体源。
10.根据权利要求7所述的处理腔室，进一步包括分隔件，所述分隔件设置在所述处理区域中。
11.根据权利要求10所述的处理腔室，其中所述分隔件形成两个处理站。
12.根据权利要求10所述的处理腔室，其中所述分隔件包括实体分隔件或空气幕。
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