TW201642380A - 半導體處理系統中的外部基板材旋轉 - Google Patents

半導體處理系統中的外部基板材旋轉 Download PDF

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TW201642380A
TW201642380A TW105110319A TW105110319A TW201642380A TW 201642380 A TW201642380 A TW 201642380A TW 105110319 A TW105110319 A TW 105110319A TW 105110319 A TW105110319 A TW 105110319A TW 201642380 A TW201642380 A TW 201642380A
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阮段安
班莎阿米古莫
羅莎亞凡利斯君卡洛斯
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應用材料股份有限公司
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Abstract

本文公開一種用於處理半導體的方法和設備。在一個實施例中，公開了一種用於半導體處理的處理系統。處理腔室包括兩個傳送腔室、處理腔室和旋轉模組。處理腔室耦接至傳送腔室。旋轉模組定位在傳送腔室之間。旋轉模組配置成旋轉基板材。傳送腔室配置成在處理腔室與傳送腔室之間傳送基板材。在另一實施例中，本文公開了一種用於在裝置上處理基板材的方法。

Description

半導體處理系統中的外部基板材旋轉
本公開總體上涉及用於半導體處理中的薄膜均勻性的方法和設備。更具體地，本公開涉及具有耦接在兩個傳送腔室之間以增加半導體處理中的薄膜均勻性的旋轉模組的處理系統。
半導體器件性能是由多種因素確定的。一個重要因素是沉積在基板材上的薄膜的均勻性。期望均勻地沉積薄膜以使得在整個基板材的表面最小化厚度變化。例如，可期望形成在整個基板材的表面小於約5%的厚度變化的薄膜。
然而，薄膜均勻性可能不利地受若干因素影響，所述因素包括加熱器溫度、腔室幾何形狀、製程氣流不均勻性和等離子體不均勻性等等。這些因素可能導致非均勻薄膜在基板材的表面上的沉積，這可能最終降低器件性能。
在處理期間旋轉基板材提供改進的均勻性。然而，在處理期間旋轉基板材要求昂貴的設備，諸如滑環和旋轉接頭。
因此，存在對在半導體處理中的薄膜均勻性的改進的裝置和方法的需要。
在一個實施例中，本文公開了一種半導體處理系統。此處理系統包括兩個傳送腔室、處理腔室和旋轉模組。所述處理腔室耦接至兩個傳送腔室中的一個傳送腔室。所述旋轉模組定位在傳送腔室之間。所述旋轉模組配置成旋轉基板材。
在另一實施例中，本文公開了一種用於處理基板材的方法。所述方法包括在處理腔室中的基板材上沉積薄膜的第一部分。所述方法包括將基板材傳送至旋轉模組。旋轉基板材達預定的量。將基板材往回傳送到處理腔室中。在基板材上沉積薄膜的第二部分。
在另一實施例中，本文公開了一種半導體處理系統。此處理系統包括傳送腔室、處理腔室和旋轉模組。處理腔室耦接至兩個傳送腔室。旋轉模組耦接至傳送腔室。旋轉模組配置成當基板材的一部分保持在傳送腔室中時旋轉所述基板材。
100‧‧‧處理系統
104a‧‧‧腔室
104b‧‧‧腔室
106‧‧‧腔室
108‧‧‧腔室
110‧‧‧負載鎖定腔室
112‧‧‧工廠介面
113‧‧‧控制器
114a‧‧‧機器人
114b‧‧‧機器人
116‧‧‧真空密閉平臺
118‧‧‧泵送系統
120‧‧‧通信電纜
122‧‧‧中央處理單元
124‧‧‧記憶體
126‧‧‧支援電路
202‧‧‧腔室主體
204‧‧‧側壁
206‧‧‧頂板材
210‧‧‧內部體積
212‧‧‧基板材支撐組件
214‧‧‧基板材接收表面
216‧‧‧軸
218‧‧‧旋轉致動器
220‧‧‧豎直致動器
222‧‧‧升降銷
223‧‧‧旋轉感測器
224‧‧‧開口
226‧‧‧波紋管
228‧‧‧測量裝置
230‧‧‧視窗
280‧‧‧內部體積
282‧‧‧內部體積
290‧‧‧平臺
292‧‧‧軸密封件
294‧‧‧板材
400‧‧‧方法
402‧‧‧步驟
404‧‧‧步驟
406‧‧‧步驟
408‧‧‧步驟
410‧‧‧步驟
501‧‧‧基板材
550‧‧‧機器人葉片
600‧‧‧處理系統
606‧‧‧旋轉模組
612‧‧‧基板材支撐組件
690‧‧‧平臺
700‧‧‧處理系統
706‧‧‧旋轉模組
因此，為了可詳細地理解本公開的上述特徵的方式，可參考實施例得出以上簡要概述的本公開的更具體的描述，在附圖中示出實施例中的一些。然而應注意的是，所附附圖僅示出本公開的典型實施例，並且因 此不被視為本公開的範圍的限制，因為本公開可允許其他等效實施例。
圖1示出根據一個實施例的包括至少一個旋轉模組的處理系統的俯視圖。
圖2示出根據一個實施例的圖1的旋轉模組的側視圖。
圖3示出根據一個實施例的圖1的處理系統的旋轉模組部分的另一實施例的側視圖。
圖4示出根據一個實施例的處理基板材的方法。
圖5A至圖5C示出根據一個實施例的圖1的旋轉模組的側視圖，這些圖描繪基板材如何被放置在基板材支撐組件上。
圖6示出根據一個實施例的具有旋轉模組的處理系統的俯視圖。
圖7示出根據一個實施例的具有旋轉模組的處理系統的俯視圖。
為清楚起見，在適用的情況下，已使用相同的附圖標記指定各圖之間共同的相同元件。另外，一個實施例的元件可有利地適於在本文所述的其他實施例中利用。
圖1示出用於處理基板材(未示出)的處理系統100的示意圖。處理系統100包括兩個傳送腔室 104a和104b、旋轉模組106和一個或多個處理腔室108。處理系統100也可包括負載鎖定腔室110、工廠介面112和控制器113。工廠介面112配置成從處理系統100裝載和卸載基板材。工廠介面112可包括適於裝載將處理的基板材以及存儲已處理的基板材的各種機器人和裝載埠。
負載鎖定腔室110將傳送腔室104a耦接至工廠介面112。負載鎖定腔室110選擇性地與傳送腔室104a流體地連通，以使得基板材可在工廠介面112的大氣環境與負載鎖定腔室110之間被傳送。傳送腔室104a包括機器人114a。機器人114a配置成傳送基板材進出腔室106、108。傳送腔室104b包括機器人114b。機器人114b配置成傳送基板材進出腔室106、108。
處理腔室108耦接至傳送腔室104a、104b。在一個實施例中，處理腔室108可以是沉積腔室或處置腔室。適當的沉積腔室的示例包括但不限於：化學氣相沉積(CVD)腔室、旋塗腔室、可流動CVD腔室、物理氣相沉積(PVD)腔室、原子層沉積(ALD)腔室、磊晶沉積腔室等等。處置腔室的示例包括但不限於：熱處置腔室、退火腔室、回火腔室、快速熱退火腔室、回火腔室、鐳射處置腔室、電子束處置腔室、紫外線(UV)處置腔室、離子束佈植腔室、離子浸沒佈植腔室等等。還構想到，處理腔室108中的一個或多個可以是另一類型的真空處理腔室。
旋轉模組106耦接至傳送腔室104a、104b。旋轉模組106將傳送腔室104a與傳送腔室104b分離。旋轉模組106允許傳送腔室104a、104b之間的流體連通，以使得從腔室104a傳送至104b的基板材經過旋轉模組106。旋轉模組106配置成旋轉基板材。在圖2中更詳細地討論旋轉模組106。
繼續參看圖1，處理腔室108、旋轉模組106、傳送腔室104a和104b，以及負載鎖定腔室110被連接以形成真空密閉平臺116。一個或多個泵送系統118耦接至負載鎖定腔室110、傳送腔室104a和104b、旋轉模組106，以及處理腔室108。在圖1中，示出耦接至負載鎖定腔室110的單個泵送系統118以避免圖示雜亂。泵送系統118控制處理系統100內的壓力。泵送系統118可用於根據需要抽空並排空負載鎖定腔室110，以便促進基板材從真空密閉平臺116的進入和移除。
處理系統100由通信電纜120耦接至控制器113。控制器113可操作以控制在處理系統100內對基板材的處理。控制器113包括可程式設計中央處理單元(CPU)122，所述可程式設計CPU 122可與記憶體124和大型存放區裝置、輸入控制單元和顯示器單元(未示出)(諸如電源、時鐘、高速緩衝記憶體、輸入/輸出(I/O)電路等等)一起操作，所述記憶體124和大型存放區裝置、輸入控制單元和顯示器單元耦接至處理系統 100的各個部件以便促進對處理基板材的製程的控制。控制器113也可包括用於通過處理系統100中的感測器(未示出)來監測對基板材的處理的硬體。
為了促進處理系統100的控制和處理基板材，CPU 122可以是用於控制基板材製程的任何形式的通用電腦處理器之一。記憶體124耦接至CPU 122並且記憶體124是非暫態的，所述記憶體124可以是容易獲得的記憶體中的一種或多種，諸如隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟機、硬碟，或任何其他形式的數位存放裝置(無論是在本地的還是在遠端的)。支援電路126耦接至CPU 122以便以常規方式支援CPU 122。用於處理基板材的製程通常被存儲在記憶體124中。用於處理基板材的製程也可由第二CPU(未示出)儲存和/或執行，所述第二CPU遠離由CPU 122控制的硬體。
記憶體124是含有指令的電腦可讀存儲介質的形式，當所述指令由CPU 122執行時促進在處理系統100中處理基板材的操作。記憶體124中的指令是程式產品(諸如實施處理基板材的操作的程式)的形式。程式碼可符合數個不同程式設計語言的任何一種。在一個實例中，本公開可實施為存儲在與電腦系統一起使用的電腦可讀存儲介質中的程式產品。程式產品的(多個)程式定義實施例的功能。說明性電腦可讀存儲介質包括，但不限於：(i)資訊被永久地存儲在其上的非可寫存 儲介質(例如，電腦內的唯讀記憶體裝置，諸如由CD-ROM讀取的CD-ROM盤，快閃記憶體、ROM晶圓或任何類型的固態非易失性半導體記憶體)；以及(ii)可改變的資訊存儲在其上的寫入存儲介質(例如，磁碟機內的軟碟或硬碟驅動器或任何類型的固態隨機存取半導體記憶體)。此類電腦可讀存儲介質當攜帶引導本文所述方法的功能的電腦可讀指令時是本公開的實施例。
圖2示出旋轉模組106的一個實施例。旋轉模組106包括腔室主體202和基板材支撐組件212。腔室主體202包括側壁204、頂板材206，和底部208。側壁204、頂板材206和底部208限定內部體積210。基板材支撐組件212設置在內部體積210中。基板材支撐組件212包括平臺290、軸216和旋轉致動器218。平臺290具有配置成接收基板材的基板材接收表面214。軸216通過開口224貫穿腔室主體202的底部208。開口224由波紋管226密封。板材294耦接至波紋管226並圍繞軸216。軸封件292是滑動密封件，所述滑動密封件在軸的致動期間在板材294和軸216之間提供真空密閉耦接。軸216耦接至平臺290。在一個實施例中，基板材支撐組件212進一步包括多個升降銷222。所述多個升降銷222被配置成延伸穿過基板材接收表面214以升高和/或降低基板材從而促進機器人式傳送。
旋轉致動器218可以是步進電機、伺服電機等等。在一個實施例中，基板材支撐組件212進一步包 括旋轉感測器223。旋轉致動器218耦接至基板材支撐組件212的軸216。旋轉致動器218可配置成旋轉基板材支撐組件212。旋轉感測器223耦接至旋轉致動器218。旋轉感測器配置成測量基板材支撐組件212的旋轉。旋轉感測器223可耦接至控制器(未示出)以向控制器提供即時的回饋。在一個實施例中，旋轉感測器223可以是編碼器。
在一個實施例中，基板材支撐組件212進一步包括豎直致動器220。豎直致動器220配置成在z方向上豎直地移動軸216，以使得平臺290被升高或降低。在圖2中，平臺290示出為處於升高的位置。
測量裝置228耦接至旋轉模組106的頂板材206。在一個實施例中，測量裝置228可以是橢率測量法裝置，所述橢率測量法裝置配置成通過形成在腔室主體202的頂板材206中的視窗230檢測沉積在基板材上的薄膜的介電屬性。動態計量學可提供對基板材的旋轉對薄膜屬性均勻性的有效性的即時回饋。
在圖2中所示的實施例中，基板材支撐組件212完全地在旋轉模組106的內部體積210內。基板材支撐組件212不延伸至第一傳送腔室104a的內部體積280中，也不延伸至第二傳送腔室104b的內部體積282中。
圖3示出根據一個實施例的圖1的處理系統100的一部分的側視圖。圖3包括第一傳送腔室104a、 第二傳送腔室104b和旋轉模組106。旋轉模組106耦接至第一傳送腔室104a和第二傳送腔室104b兩者。旋轉模組106允許第一傳送腔室104a與第二傳送腔室104b之間的流體連通，以使得可在第一傳送腔室104a與第二傳送腔室104b之間傳送基板材。在圖3中所示的實施例中，基板材支撐組件212不完全在旋轉模組106的內部體積210內。相反，基板材支撐組件212部分地延伸至第一傳送腔室104a的內部體積280中和第二傳送腔室104b的內部體積282中。例如，平臺290可延伸至傳送腔室104a、104b中。因此，在圖3中所示的實施例中，旋轉模組106具有比在圖2中所示的旋轉模組106的內部體積210更小的內部體積210。
圖4示出在諸如圖1中所描繪的處理系統100中處理基板材的方法400。方法400通過在第一處理腔室108中的基板材上執行薄膜沉積製程的第一部分而開始於方塊402。基板材由設置在第一傳送腔室104a中的機器人114a傳送至第一處理腔室108。機器人114a配置成在傳送腔室104a與處理腔室108之間移動基板材。機器人114a將基板材從負載鎖定腔室110傳送至第一傳送腔室104a中。第一處理腔室108可以是沉積腔室，所述沉積腔室諸如CVD腔室、旋塗腔室、可流動CVD腔室、PVD腔室和ALD腔室，或者適合在基板材上沉積薄膜的任何其他沉積腔室。第一處理腔室108中，對基板材執行薄膜沉積製程的第一部分。
在方塊404處，由機器人114a將基板材從第一處理腔室108傳送至旋轉模組106，如圖5A至圖5B所示。圖5A至圖5B示出在方法400的方塊404處的旋轉模組106。圖5A示出當機器人正在將基板材501定位在基板材支撐組件212上時的旋轉模組106。豎直致動器220在向下的z方向上致動基板材支撐組件212以允許機器人114a將基板材501放置在基板材支撐組件212上。基板材的升降銷222是穿過支撐組件212的平臺290而形成。在向上的z方向上致動升降銷222，以使得當基板材支撐組件212被降低時，升降銷222在基板材接收表面214上方延伸出。在降低的位置中，升降銷222接觸腔室主體202的底部208。結果，升降銷222在基板材接收表面214上方延伸出。來自機器人114a的機器人葉片550從傳送腔室104a延伸穿過開口以將基板材501定位在內部體積210中。致動升降銷222允許基板材接收表面214從機器人葉片550接收基板材501而不阻礙機器人葉片550的通道。升降銷222可在向下的z方向上致動以當從基板材501下方移除葉片時，將基板材501定位在平臺290的基板材接收表面214上。為了在向下的z方向上致動升降銷222，在向上的z方向上致動基板材支撐組件212，以使得升降銷222不再接觸腔室主體202的底部208。
圖5B示出具有在延伸的位置中的被提升的基板材支撐組件212的旋轉模組106。豎直致動器220 將基板材支撐組件212致動至延伸的位置。在延伸的位置中，旋轉致動器218配置成旋轉基板材支撐組件212(在圖5C中示出)。如圖所示，升降銷222脫離與基板材接觸。現在，基板材正停留在基板材接收表面214上。在延伸的位置中，沉積在第一處理腔室108中的基板材上的薄膜的屬性可使用測量裝置228來測量。測量薄膜的屬性允許對在沉積製程的各階段期間的薄膜均勻性的更好的理解。
返回參看圖4，在方塊406處，使旋轉模組106旋轉預定的角度，如圖5C中所示。圖5C示出如方塊406中所述的、經由旋轉致動器218對基板材501的旋轉。旋轉致動器218旋轉基板材支撐組件212的軸216，以使得平臺290和基板材501隨著軸216一起旋轉。基板材501的旋轉改變基板材501相對於基板材的原始位置的位置。在一個實施例中，旋轉致動器218可在約1度與360度之間繞基板材501的中心軸線旋轉。例如，旋轉致動器218可在約90與180度之間旋轉基板材501。一旦基板材501被旋轉，就以可逆序地執行圖5A至圖5C中所示的製程，以使得機器人114a可從旋轉模組106移除基板材501。
繼續參看圖4，在方塊408處，將基板材501從旋轉模組106傳送至第二處理腔室108。在第二處理腔室108中，基板材501經歷薄膜沉積製程的第二部分，如由方塊410所示。機器人114b將基板材501從旋 轉模組106傳送至第二傳送腔室104b，且隨後傳送至第二處理腔室108。薄膜沉積製程的第二部分可以是與薄膜沉積製程的第一部分相同的薄膜沉積製程。例如，薄膜沉積製程的第二部分可以是CVD腔室、旋塗腔室、可流動CVD腔室、PVD腔室和ALD腔室，或者適合在基板材上沉積薄膜的任何其他沉積腔室。
基板材的處理可通過重複圖4中所述的方法400進行，直到在基板材上已形成滿意的薄膜為止。隨後，可從處理系統100移除基板材。在一個實施例中，基板材可被旋轉約90度四次，以使得基板材經歷四次薄膜沉積製程且被傳送至旋轉模組106四次。因此，當基板材在處理腔室108中處於四個不同的取向時，基板材可在處理腔室108中被處理。也可使用在旋轉模組106的頂上的測量裝置228單獨地測量薄膜的屬性四次。
圖6示出根據一個實施例的用於處理基板材的處理系統600。處理系統600類似於處理系統100。相應地，已使用相同的附圖標記指定上文參看圖1描述的相同部件。處理系統600包括傳送腔室104、旋轉模組606和一個或多個處理腔室108。處理系統600也可包括負載鎖定腔室110、工廠介面112和控制器113。一個或多個處理腔室108和旋轉模組606耦接至傳送腔室104。
旋轉模組606類似於旋轉模組106。相應地，已使用相同的附圖標記指定上文參看圖1、圖2和圖 3描述的相同部件。旋轉模組606與傳送腔室104處於流體地連通。旋轉模組606被配置成旋轉基板材。旋轉模組606進一步包括基板材支撐組件612。基板材支撐組件612包括平臺690。旋轉模組606被尺寸設定為使得旋轉模組606具有長度L，所述長度L小於平臺690的直徑D。因此，基板材支撐元件612部分地延伸至傳送腔室104中。相比平臺690的直徑D的旋轉模組606的長度L具有若干優點。旋轉模組606的處理體積V被減小，導致將抽空旋轉模組606所需的更少的時間。另外，因為平臺690延伸至旋轉模組606中，所以去除了移動的部件(諸如在傳送腔室和旋轉模組之間的狹縫閥門)。
圖7示出根據一個實施例的用於處理基板材的處理系統700。處理系統700類似於處理系統100。因此，已使用相同的附圖標記指定上文參看圖1描述的相同部件。處理系統700包括傳送腔室104、旋轉模組706和一個或多個處理腔室108。旋轉模組706定位在負載鎖定位置處。旋轉模組706配置成旋轉基板材。旋轉模組706和一個或多個處理腔室108與傳送腔室104流體地連通。
雖然上述內容針對本公開的實施例，但是可設計本公開的其他和進一步的實施例而不背離本公開的基本範圍，並且本公開的範圍由所附權利要求書來確定。
100‧‧‧處理系統
104a‧‧‧腔室
104b‧‧‧腔室
106‧‧‧腔室
108‧‧‧腔室
110‧‧‧負載鎖定腔室
112‧‧‧工廠介面
113‧‧‧控制器
114a‧‧‧機器人
114b‧‧‧機器人
116‧‧‧真空密閉平臺
118‧‧‧泵送系統
120‧‧‧通信電纜
122‧‧‧中央處理單元
124‧‧‧記憶體
126‧‧‧支援電路

Claims (20)

  1. 一種用於半導體處理的處理腔室，該處理腔室包含：兩個傳送腔室；一處理腔室，耦接至該兩個傳送腔室中的一個傳送腔室；一旋轉模組，定位在該傳送腔室之間，該旋轉模組配置成旋轉一基板材。
  2. 如請求項1所述之處理系統，其中該旋轉模組包括：一腔室主體，界定一內部體積；一基板材支撐組件，安置在該內部體積中；一旋轉致動器，耦接至該基板材支撐組件，該旋轉致動器配置成旋轉該基板材支撐組件。
  3. 如請求項2所述之處理系統，其中該旋轉模組進一步包括：一旋轉感測器，與該旋轉致動器連通，該旋轉感測器配置成測量該基板材支撐組件之一旋轉。
  4. 如請求項2所述之處理系統，其中該旋轉模組進一步包括：一豎直致動器，耦接至該基板材支撐組件，該豎直致動器配置成豎直移動該基板材支撐組件。
  5. 如請求項2所述之處理系統，其中該旋轉模組進一步包括：一測量模組，耦接至該腔室主體，其中該測量模組配置成經由一視窗檢測沉積在一基板材上的一薄膜的介電屬性，該視窗形成於該腔室主體中。
  6. 如請求項2所述之處理系統，其中該基板材支撐組件完全包含在該旋轉模組的該內部體積內。
  7. 如請求項2所述之處理系統，其中該基板材支撐組件部分延伸至一第一傳送腔室之一內部體積內，及延伸至一第二傳送腔室之一內部體積內。
  8. 一種方法，用於處理一基板材，該方法包括以下步驟：將一薄膜的一第一部分沉積在一處理腔室中的一基板材上；傳送該基板材至一旋轉模組；旋轉該基板材達一預定量；將該基板材傳送至該處理腔室；將該薄膜的一第二部分沉積在該處理腔室中的該基板材上。
  9. 如請求項8所述之方法，進一步包括：在該處理腔室中在一向下z方向致動一基板材支撐組件； 將該基板材定位在該處理腔室中的該基板材支撐組件上，其中該處理腔室配置成在該基板材上沉積該薄膜的該第一部分；及在該處理腔室中在一向上z方向致動該基板材支撐組件。
  10. 如請求項8所述之方法，其中該基板材經由一傳送腔室從該處理腔室傳送至該旋轉模組。
  11. 如請求項10所述之方法，其中該該基板材定位在一基板材支撐組件上，該基板材支撐組件部分地延伸至該傳送腔室中。
  12. 如請求項8所述之方法，其中該基板材旋轉180°。
  13. 如請求項8所述之方法，其中該基板材旋轉n次，及經歷n次沉積。
  14. 一種處理腔室，用於半導體處理，該處理腔室包括：一傳送腔室；一處理腔室，耦接該傳送腔室；一旋轉模組，耦接至該傳送腔室，該旋轉模組配置成在一基板材之一部分保持在該傳送腔室中的同時旋轉該基板材。
  15. 如請求項14所述之處理系統，其中該旋 轉模組包括：一腔室主體，界定一內部體積；一基板材支撐組件，安置在該內部體積中；一旋轉致動器，耦接至該基板材支撐組件，該旋轉致動器配置成旋轉該基板材支撐組件。
  16. 如請求項15所述之處理系統，其中該旋轉模組進一步包括：一旋轉感測器，與該旋轉致動器連通，該旋轉感測器配置成測量該基板材支撐組件之一旋轉。
  17. 如請求項15所述之處理系統，其中該旋轉模組進一步包括：一豎直致動器，耦接至該基板材支撐組件，該豎直致動器配置成豎直移動該基板材支撐組件。
  18. 如請求項15所述之處理系統，其中該旋轉模組進一步包括：一測量模組，耦接至該腔室主體，其中該測量結果模組配置成經由一視窗檢測沉積在一基板材上的一薄膜的介電屬性，該視窗形成於該腔室主體中。
  19. 如請求項15所述之處理系統，其中該基板材支撐組件完全包含在該旋轉模組之該內部體積內。
  20. 如請求項15所述之處理系統，其中該基 板材支撐組件部分地延伸一第一傳送腔室之一內部體積內和一第二傳送腔室之一內部體積內。
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