TW201545372A - 磊晶晶圓、半導體發光元件、發光裝置及磊晶晶圓之製造方法 - Google Patents

磊晶晶圓、半導體發光元件、發光裝置及磊晶晶圓之製造方法 Download PDF

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Publication number
TW201545372A
TW201545372A TW104107347A TW104107347A TW201545372A TW 201545372 A TW201545372 A TW 201545372A TW 104107347 A TW104107347 A TW 104107347A TW 104107347 A TW104107347 A TW 104107347A TW 201545372 A TW201545372 A TW 201545372A
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Taiwan
Prior art keywords
layer
light
emitting
quantum well
less
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TW104107347A
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English (en)
Chinese (zh)
Inventor
Kaori Kurihara
Satoru Nagao
Tetsuya Fujiwara
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Mitsubishi Chem Corp
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Publication date
Priority claimed from JP2014169720A external-priority patent/JP2017139247A/ja
Application filed by Mitsubishi Chem Corp filed Critical Mitsubishi Chem Corp
Publication of TW201545372A publication Critical patent/TW201545372A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW104107347A 2014-05-30 2015-03-06 磊晶晶圓、半導體發光元件、發光裝置及磊晶晶圓之製造方法 TW201545372A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014113194 2014-05-30
JP2014169720A JP2017139247A (ja) 2014-05-30 2014-08-22 エピタキシャルウエハ、半導体発光素子、発光装置及びエピタキシャルウエハの製造方法

Publications (1)

Publication Number Publication Date
TW201545372A true TW201545372A (zh) 2015-12-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW104107347A TW201545372A (zh) 2014-05-30 2015-03-06 磊晶晶圓、半導體發光元件、發光裝置及磊晶晶圓之製造方法

Country Status (3)

Country Link
JP (1) JP2016164966A (ja)
TW (1) TW201545372A (ja)
WO (1) WO2015182207A1 (ja)

Cited By (1)

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CN112201732A (zh) * 2020-09-16 2021-01-08 广东省科学院半导体研究所 一种紫外led量子阱生长方法

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JP7041461B2 (ja) 2016-10-27 2022-03-24 株式会社サイオクス 半絶縁性結晶、ｎ型半導体結晶およびｐ型半導体結晶
DE102017119931A1 (de) * 2017-08-30 2019-02-28 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP7262965B2 (ja) * 2018-10-17 2023-04-24 スタンレー電気株式会社 半導体発光素子
CN112271190A (zh) * 2020-10-30 2021-01-26 杭州数通光电有限公司 连续波长晶片及其制作方法
CN113013302A (zh) * 2021-02-26 2021-06-22 东莞市中麒光电技术有限公司 InGaN基红光LED芯片结构的制备方法

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GB2372632A (en) * 2001-02-23 2002-08-28 Sharp Kk A method of growing an InGaN semiconductor layer
US7446345B2 (en) * 2005-04-29 2008-11-04 Cree, Inc. Light emitting devices with active layers that extend into opened pits
JP5391661B2 (ja) * 2007-11-21 2014-01-15 三菱化学株式会社 窒化物半導体の結晶成長方法
JP2012184144A (ja) * 2011-03-07 2012-09-27 Tokuyama Corp 窒化ガリウム結晶積層基板及びその製造方法
JPWO2013042297A1 (ja) * 2011-09-20 2015-03-26 パナソニックＩｐマネジメント株式会社 窒化ガリウム系化合物半導体発光素子及びそれを用いた光源装置
CN103503182A (zh) * 2012-01-23 2014-01-08 松下电器产业株式会社 氮化物半导体发光装置
WO2013132812A1 (ja) * 2012-03-05 2013-09-12 パナソニック株式会社 窒化物半導体発光素子、光源及びその製造方法
JP2013191617A (ja) * 2012-03-12 2013-09-26 Toshiba Corp 半導体発光素子
JP2014005189A (ja) * 2012-05-31 2014-01-16 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物半導体基板の製造方法
JP5383880B1 (ja) * 2012-08-13 2014-01-08 株式会社東芝 窒化物半導体層の製造方法及び半導体発光素子の製造方法
JP2014053614A (ja) * 2012-09-07 2014-03-20 Mitsubishi Chemicals Corp 発光ダイオード素子
JP5496436B1 (ja) * 2012-10-01 2014-05-21 パナソニック株式会社 構造体及びその製造方法、並びに構造体を用いた窒化ガリウム系半導体発光素子及びその製造方法
JP2014088272A (ja) * 2012-10-29 2014-05-15 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物半導体結晶
JP5900400B2 (ja) * 2013-03-28 2016-04-06 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP5889981B2 (ja) * 2014-09-09 2016-03-22 株式会社東芝 半導体発光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112201732A (zh) * 2020-09-16 2021-01-08 广东省科学院半导体研究所 一种紫外led量子阱生长方法
CN112201732B (zh) * 2020-09-16 2021-09-03 广东省科学院半导体研究所 一种紫外led量子阱生长方法

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WO2015182207A1 (ja) 2015-12-03
JP2016164966A (ja) 2016-09-08

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