CN104715993A - Plasma processing cavity, gas spraying head and manufacturing method thereof - Google Patents
Plasma processing cavity, gas spraying head and manufacturing method thereof Download PDFInfo
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- CN104715993A CN104715993A CN201310688060.2A CN201310688060A CN104715993A CN 104715993 A CN104715993 A CN 104715993A CN 201310688060 A CN201310688060 A CN 201310688060A CN 104715993 A CN104715993 A CN 104715993A
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- gas spray
- resistant layer
- gas
- etch resistant
- plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Abstract
The invention provides a plasma processing cavity, a gas spraying head and a manufacturing method thereof. The gas spraying head is integrally molded and is provided with a plurality of gas through holes machined at a time, and the outer wall of the gas spraying head and inner walls of the gas through holes are each covered with a first anti-corrosion layer. The plasma processing cavity and the gas spraying head are simple in process, and low in manufacturing cost. The gas spraying head is more stable and more reliable in structure; in addition, the anti-corrosion layers are free of pores, are denser and will not crack. The manufacturing process of a base sheet of the plasma processing cavity is more stable.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of plasma process chamber, gas spray and manufacture method thereof.
Background technology
Plasma treatment appts utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is in vacuum reaction chamber, pass into the reacting gas containing suitable etchant source gas, and then radio-frequency (RF) energy input is carried out to this vacuum reaction chamber, with activated reactive gas, excite and maintain plasma, so that the material layer etched respectively on substrate surface or over the substrate surface depositing layer of material, and then semiconductor chip and plasma flat-plate are processed.
Gas spray is the important component part in plasma processing apparatus.Have one or more gas source in plasma processing apparatus outer setting, one or more reacting gass are transported to gas spray by gas transmission pipeline by gas source.Gas spray is arranged at the top of plasma processing apparatus chamber interior, and region parallel with gas spray below chamber is also provided with the base station that is placed substrate, is process zone between gas spray and base station.Be provided with some pores among gas spray, reacting gas enters process zone equably by some pores, and is provoked into plasma under the effect of radio frequency power source.Because the lower surface of gas spray is directly exposed to plasma, therefore often need to arrange etch resistant layer thereon, but along with the increase of service time, gas spray often also can produce problems of crack.
Therefore, be devoted in the industry to study the gas spray reliable and stable, resistance to corrosion is strong always.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma process chamber, gas spray and manufacture method thereof.
First aspect present invention provides a kind of gas spray for plasma process chamber, wherein, described gas spray is integrated, wherein be provided with the gas via-hole that several process at one time, described gas spray outer wall and gas via-hole inwall are coated with one deck first etch resistant layer.
Further, described gas spray sidewall and on being exposed on the lower surface of plasma the first etch resistant layer, is coated with one deck second etch resistant layer.
Further, heater is provided with in described gas spray.
Further, the material of described first etch resistant layer and the second etch resistant layer is selected from following any one or appoints multinomial: Y
2o
3, YF
3, ErO
2, Al
2o
3.
Further, the deposition process of described first etch resistant layer and the second etch resistant layer is selected from following any one respectively: Plasma Immersion Ion Implantation and deposition method, physical vapour deposition (PVD), chemical vapour deposition (CVD).
Further, the Thickness scope of described first etch resistant layer is for being greater than 0.5um.
Further, the Thickness scope of described second etch resistant layer is by determining the useful life of described gas spray and described first etch resistant layer, and the thickness of described second etch resistant layer is greater than the thickness of described first etch resistant layer.
Further, described gas spray is by aluminium alloy processing procedure.
Second aspect present invention provides a kind of manufacture method of the gas spray for plasma process chamber, and wherein, it comprises the gas spray of first aspect present invention, and wherein, described manufacture method comprises the steps:
One aluminum alloy substrate is provided;
Bore several gas via-holes from top to bottom in described Al-alloy based ground, form gas spray;
One deck first etch resistant layer is deposited at the outer wall of described gas spray and the inwall of gas via-hole;
At sidewall and surface deposition one deck second etch resistant layer being exposed to plasma of described gas spray.
Further, described method is also included in gas spray the step arranging heater.
Further, described manufacture method comprises the steps: to inject and deposition one deck first etch resistant layer at the outer wall of described gas spray and the inwall using plasma immersion ion of gas via-hole.
Further, described manufacture method comprises the steps: to adopt physical vapour deposition (PVD) to deposit one deck second etch resistant layer at the sidewall of described gas spray with the surface being exposed to plasma.
Third aspect present invention provides a kind of plasma process chamber, and wherein, described plasma process chamber comprises the gas spray described in first aspect present invention.
Plasma process chamber provided by the invention, gas spray and manufacture method operation thereof are simple, low cost of manufacture.Gas shower header structure is more reliable and more stable, and etch resistant layer tight and denser, can not ftracture.In plasma process chamber provided by the invention, substrate processing procedure is more stable.
Accompanying drawing explanation
Fig. 1 is the structural representation of the gas spray of the plasma process chamber of prior art;
Fig. 2 is the structural representation for plasma process chamber according to the present invention's specific embodiment;
Fig. 3 is the structural representation of the gas spray for plasma process chamber according to the present invention's specific embodiment.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
It is to be noted; " semiconductor arts piece ", " wafer " and " substrate " these words often will be exchanged use in explanation subsequently; in the present invention; they all refer to that, in the processed process conditions of process chamber, process conditions is not limited to wafer, substrate, substrate, large-area flat-plate substrate etc.For convenience of description, mainly exemplary illustration will be made for " substrate " herein in execution mode illustrates and illustrates.
Fig. 1 is the structural representation of the gas spray of the plasma process chamber of prior art.As shown in Figure 1, gas spray 100 comprises installation base plate 103, second main body 102 and the first main body 101 and yttria coating 104 from top to bottom.Wherein, the first main body 101 is provided with several first through holes 106a, the second main body 102 is provided with several second through holes 106b.First main body 101 and the second main body 102 machine respectively, that is, provide base respectively and hole wherein.Therefore, the first through hole 106a and the second through hole 106b is not what process at one time.First main body 101 and the second main body 102 press together the main part of composition gas spray 100 again after having holed respectively.Installation base plate 103 as the installation frame of gas spray 100, as strutting piece and the installed part of other assemblies of gas spray.Because reacting gas is inflow gas spray head 100 from top to down, therefore, installation base plate 103 is also provided with several third through-holes adaptively.Namely, reacting gas flows through third through-hole 106c respectively according to order from top to down, and the second through hole 106b and the first through hole 106a enters process zone, thus excites under the effect of radio-frequency power and become plasma, to carry out processing procedure to substrate.Finally, the back side being exposed to the plasma in process zone at gas spray 100 applies one deck yttria coating 104 again, for preventing the corrosion of plasma, extends the useful life of gas spray.
But there is a lot of defect in the gas spray of prior art.For capacitive coupling plasma process chamber (CCP), the first main body 101 of the gas spray 100 made with carborundum (SiC) can be bombarded, such as, by CF by different types of halogen plasma in processing procedure process
4, Cl
2the plasma of generation is excited Deng reacting gas.Such gas spray 100 also have high cost and service time limited problem.Therefore, in order to improving SNR and reducing costs, surperficial using plasma spraying (Plasma Spray) that the gas spray 100 of prior art is exposed to plasma at it is further coated with one deck yttria coating (Y
2o
3) 104, and other regions of gas spray 100 all adopt anodization (anodized) to reach erosion-resisting object.Due to the loose structure (porousstructure) of yttria coating 104 rough surface of plasma spray coating, such gas spray 100 has very high particle contamination risk (particle creation risk) in plasma process.
Prior art is in order to further improving SNR stability, and gas spray 100 adopts physical vapour deposition (PVD) deposition not have hole further and highdensity yttria coating 104 is exposed to the surface of plasma in gas spray.Like this be arranged so that metal pollutant and particulate pollutant reduce really, this is the metallic substrates (the first main body 101) owing to have employed physical vapor deposition yttria coating 104 and gas spray 100, such as aluminium alloy.But, as shown in Figure 1, in capacitive coupling plasma treatment chamber, heater 105 is arranged in the second main body 102 on gas spray, described second main body 102 is made up of aluminium alloy and is embedded with some heaters 105, and its outer surface is also through anodized.
As shown in Figure 1, the stability of plasma process can be affected by gas spray 100 and heater 105 and installation base plate 103, this is that this contact-making surface a can affect the propagation of heat between the first main body 101 and the second main body 102 that heater 105 produces owing to being present in an interface/contact-making surface a between second main body 102 and the first main body 101 of embedded heater 105.And, although prior art adopt various technology as far as possible by the first main body 101 and the second main body 102 compressed together, make as far as possible contact-making surface a be there is no a space level off to 0, but contact-making surface a still Existential Space, the capacity of the first main body 101 and the second main body 102 and electromotive force are changed, the plasma of substrate surface therefore can be caused to distribute.In addition, the space of contact-making surface a also can make different reacting gass enter each gas passage by this space, such as when needs pass into two or more differential responses gas respectively, gas can enter generation mixing between process zone thus can not reach processing procedure object.In addition, the first main body 101 is that carborundum is made, and the second main body 102 is that aluminium alloy is made, and technique is unstable between the two, and also can rise due to the numerous and diverse manufacturing cost of manufacturing process.
It should be noted that, gas spray 100 main body of prior art is the first main body 101, and the second main body 102 is mainly in order to carry, and heater 105 arranges, and be provided with some gas via-holes wherein to make reacting gas enter chamber smoothly.
Based on this, the invention provides a kind of plasma process chamber, gas spray and manufacture method thereof, will be hereafter that present invention is described for example in conjunction with capacitive coupling plasma etching cavity.It should be noted that, it will be appreciated by those skilled in the art that the present invention is not only applicable to capacitive coupling plasma etching cavity, be also applicable to chemical vapor deposition unit and metal organic vapor phase deposition device etc.Capacitive coupling plasma etching cavity in the preferred embodiment of the present invention is not considered as limitation of the present invention.Fig. 2 is the structural representation for plasma process chamber according to the present invention's specific embodiment.As shown in Figure 2, plasma etch chamber room A has a process chambers, process chambers is essentially cylindricality, and process chambers sidewall 700 perpendicular, there is in process chambers top electrode arranged in parallel and bottom electrode, wherein top electrode is integrated near gas spray, and bottom electrode is integrated among base station 400, all not shown.Usually, the region between top electrode and bottom electrode is processing region P, this processing region P by formation high-frequency energy to light and maintain plasma.Place substrate W to be processed above electrostatic chuck in base station 400, this substrate W can be the semiconductor chip treating to etch or to process or the glass plate treating to be processed into flat-panel monitor.Wherein, described electrostatic chuck is used for clamping substrate W, and chucking power is applied with direct voltage 600 by the DC electrode 500 be arranged on electrostatic chuck upper-layer insulation film to produce afterwards.Reacting gas is input in process chambers from gas source 300, one or more radio-frequency power supply 600 can be applied individually on the bottom electrode or is applied on top electrode and bottom electrode respectively simultaneously, in order to be transported on bottom electrode by radio-frequency power or on top electrode and bottom electrode, thus produce large electric field in process chambers inside.In the involved processing region between the upper and lower electrodes of most of electric field line, this electric field accelerates the electronics being present in process chambers inside on a small quantity, makes it the gas molecule collision with the reacting gas inputted.These collisions cause exciting of the ionization of reacting gas and plasma, thus produce plasma in process chambers.The neutral gas molecule of reacting gas loses electronics when standing these highfields, leaves the ion of positively charged.The ion of positively charged accelerates towards bottom electrode direction, and the neutral substance in processed substrate W is combined, and excites substrate to process, i.e. etching, deposit etc.Certain suitable position of plasma etch chamber room A is provided with exhaust gas region, and exhaust gas region is connected with external exhaust apparatus (such as vacuum pump pump 800), in order to extract chamber out by by the reacting gas crossed and bi-product gas in processing procedure.Wherein, be also provided with in chamber plasma confinement ring for by plasma confinement in processing region.
Fig. 3 is the structural representation of the gas spray for plasma process chamber according to the present invention's specific embodiment.Wherein, gas spray 200 is arranged at chamber top, and it is connected to gas source 300 by gas piping, is connected with a valve 900 between described gas spray 200 and gas source 300.Open valve 900, one or more reacting gass just enter gas spray 200 from gas source 300 gas coming through pipeline.Several gas via-holes 202 are provided with in gas spray 200, the shape of gas spray 200 has certain thickness tabular, gas via-hole 202 is arranged in gas spray 200 equably dispersedly, therefore, reacting gas enters into process volume P equably by gas via-hole 202 and be provoked into plasma under the effect of radio-frequency (RF) energy, thus carries out processing procedure to the substrate W that base station 400 is placed.
Wherein, in the present invention, described gas spray 200 is one-body molded (one piece).As shown in Figure 3, gas spray 200 is that a monoblock matrix manufacture forms, and is not that prior art is by compressed together for two pieces of main bodys.The gas via-hole 202 that several process at one time from top to bottom is provided with in described gas spray 200.Therefore, present invention, avoiding gas spray in prior art to be formed by upper and lower two main bodys compacting, its contact-making surface produces space, thus produce the mutual mixing of reacting gas before entering process zone P, it also avoid prior art gas spray due to upper and lower two main bodys makes the different and unsteadiness that produces of material, and processing procedure operation is complicated and the problem of cost increase.
In addition, described gas spray 200 outer wall and gas via-hole 202 inwall are coated with one deck first etch resistant layer 204.The gas spray 200 that such surface treatment makes aluminium alloy make is combined in the first very thin etch resistant layer 204 being exposed to plasma surface and protects; and no longer directly touch corrosive process gas due to the separation gas spray head 200 of the first etch resistant layer 204, and play gas via-hole 202 is also no longer subject to process gas corrosiveness due to passing through of process gas.In addition, invention also avoids cause process gas to excite the plasma of generation directly to touch owing to being applied with radio-frequency (RF) energy surface that gas spray 200 is exposed to process zone P.
Further, the material of the first etch resistant layer 204 comprises Y
2o
3or YF
3, its thickness is approximately at least 0.5um.
Further, described gas spray 200 sidewall and on being exposed on the lower surface of plasma the first etch resistant layer 204, is coated with one deck second etch resistant layer 206.The thickness of described second etch resistant layer 206 is according to determining the useful life of required gas spray 200 and the first etch resistant layer 204.Further, the thickness of the second etch resistant layer 206 is greater than the first etch resistant layer 204.
Further, heater 205 is set directly in the matrix of gas spray 200.Because heater 205 is embedded in gas spray 200, therefore there is the function of heating.
Further, the material of described first etch resistant layer 204 and the second etch resistant layer 206 is selected from following any one or appoints multinomial: Y
2o
3, YF
3, ErO
2, Al
2o
3.Preferably, described first etch resistant layer 204 and the second etch resistant layer 206 are Y
2o
3or YF
3.
Further, the deposition process of described first etch resistant layer 204 and the second etch resistant layer 206 is selected from following any one respectively: Plasma Immersion Ion Implantation and deposition method, physical vapour deposition (PVD), chemical vapour deposition (CVD).Above-mentioned manufacturing method thereof will be introduced hereinafter.
Further, gas spray 200 is made up of aluminium alloy (Al alloy) material, the distribution of gas pattern (gas distribution patterns) of gas spray 200 has the distribution of specific structure and gas via-hole 202, such geometric properties can coordinate easily or be arranged on mounting panel (not shown, to be generally positioned at above gas spray) to form the whole gas spray comprising top electrode of plasma etch chamber room A.
Second aspect present invention provides a kind of manufacture method of the gas spray 200 for plasma process chamber.First, an aluminum alloy substrate is provided.Then, evenly disperse several gas via-holes 202 of ground auger from top to bottom in described Al-alloy based ground, form gas spray 200, to form specific geometric properties.Then, one deck first etch resistant layer 204 is deposited at the outer wall of described gas spray 200 and gas via-hole 202 inwall.Finally, at sidewall and surface deposition one deck second etch resistant layer 206 being exposed to plasma of described gas spray 200.
Particularly, first etch resistant layer by Plasma Immersion Ion Implantation and deposition method (plasma immersion ion deposition, PIID), plating (electroplating), synthesis such as wet chemistry coating (wet chemical coating) such as collosol and gel etc. at the sidewall of gas spray 200 and gas via-hole 202 inwall.Above manufacturing process method can perform does not have visual angle line (none-line-of-sight) to deposit with the sidewall and gas via-hole 202 inwall that are evenly distributed on gas spray 200.Above-mentioned steps of the present invention is the surface anodization process of the gas spray in order to alternative prior art, improves the resistance to corrosion of gas spray thus, can bear such as halogen plasma and halogen gas (such as Cl with gas spray 200 simultaneously
2) corrosion, thus make gas spray 200 have longer useful life.According to a specific embodiment of the present invention, first etch resistant layer 204 is sidewall and gas via-hole 202 inwalls that (lower than 200 DEG C) are deposited on gas spray 200 under low deposition temperature, coating obtained like this has good adhesiveness, make the first etch resistant layer 204 can with the plastics of aluminium alloy, other alloys or plasma resistant etc. on the gas spray 200 of matrix.
Preferably, described first etch resistant layer 204 is made up of Plasma Immersion Ion Implantation and deposition method, wherein, the aluminum alloy substrate of gas spray is dipped into also usual through extra pulse assistance (pulse bailed) in the plasma, then speeding-up ion extracts (extracted) and out impinges upon Al-alloy based basal surface from plasma, and its intermediate ion and reacting gas and material surface react thus concentrated (condensed) is the first etch resistant layer 204 simultaneously.Due to plasma can in vacuum treatment chamber different plasma source effect under produce, and gas spray substrate is by the coated coating of implanted ions, first etch resistant layer that therefore can obtain homogeneous and dense (uniform and dense) is in the sidewall of gas spray 200 and gas via-hole 202 inwall.
Further, described method is also included in the step arranging heater 205 in gas spray 200.How to be arranged in gas spray 200 about heater 205, prior art has ripe technical support, for simplicity's sake, repeats no more.
Wherein, described second etch resistant layer 206 typically is yittrium oxide, and its thickness typically is and is greater than 20um, or is even greater than 80um.Alternatively, the second etch resistant layer 206 adopts physical vapor deposition at described gas spray 200 sidewall and on being exposed on the lower surface of plasma the first etch resistant layer 204 alternatively.
According to plasma process chamber provided by the invention, gas spray and manufacture method thereof, gas spray to be installed in plasma process chamber and to define the whole top electrode on the surface with plasma resistant diatery supplement.Because gas spray is integrated, heater is also arranged in gas spray in the lump, and the temperature of gas spray can more accurately be controlled in multiple concrete processing procedure.Further, the volume change that the contact-making surface space due to two main bodys up and down not having extra such as prior art gas spray is brought, the stability of substrate processing procedure has been enhanced.Have etch resistant layer due to gas spray and do not have space and dense structure, chamber endoparticle pollutes and is also greatly diminished, and chamber is improved useful life.The anodized surface of prior art gas spray easily ftractures at the temperature of 100 DEG C, and the present invention does not exist this defect yet.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.In addition, any Reference numeral in claim should be considered as the claim involved by restriction; " comprise " word and do not get rid of device unlisted in other claim or specification or step; The word such as " first ", " second " is only used for representing title, and does not represent any specific order.
Claims (13)
1. the gas spray for plasma process chamber, it is characterized in that, described gas spray is integrated, is wherein provided with the gas via-hole that several process at one time, and described gas spray outer wall and gas via-hole inwall are coated with one deck first etch resistant layer.
2. gas spray according to claim 1, is characterized in that, described gas spray sidewall and on being exposed on the lower surface of plasma the first etch resistant layer, is coated with one deck second etch resistant layer.
3. gas spray according to claim 2, is characterized in that, is provided with heater in described gas spray.
4. gas spray according to claim 2, is characterized in that, the material of described first etch resistant layer and the second etch resistant layer is selected from following any one or appoints multinomial: Y
2o
3, YF
3, ErO
2, Al
2o
3.
5. gas spray according to claim 4, it is characterized in that, the deposition process of described first etch resistant layer and the second etch resistant layer is selected from following any one respectively: Plasma Immersion Ion Implantation and deposition method, physical vapour deposition (PVD), chemical vapour deposition (CVD).
6. gas spray according to claim 5, is characterized in that, the Thickness scope of described first etch resistant layer is for being greater than 0.5um.
7. gas spray according to claim 5, it is characterized in that, the Thickness scope of described second etch resistant layer is by determining the useful life of described gas spray and described first etch resistant layer, and the thickness of described second etch resistant layer is greater than the thickness of described first etch resistant layer.
8. gas spray according to claim 7, is characterized in that, described gas spray is made up of aluminium alloy.
9. for a manufacture method for the gas spray of plasma process chamber, wherein, it comprises the gas spray described in any one of claim 1 to 8, it is characterized in that, described manufacture method comprises the steps:
One aluminum alloy substrate is provided;
Bore several gas via-holes from top to bottom in described Al-alloy based ground, form gas spray;
One deck first etch resistant layer is deposited at the outer wall of described gas spray and the inwall of gas via-hole;
At sidewall and surface deposition one deck second etch resistant layer being exposed to plasma of described gas spray.
10. manufacture method according to claim 9, is characterized in that, described method is also included in gas spray the step arranging heater.
11. manufacture methods according to claim 9, it is characterized in that, described manufacture method comprises the steps: to inject and deposition one deck first etch resistant layer at the outer wall of described gas spray and the inwall using plasma immersion ion of gas via-hole.
12. manufacture methods according to claim 9, is characterized in that, described manufacture method comprises the steps: to adopt physical vapour deposition (PVD) to deposit one deck second etch resistant layer at the sidewall of described gas spray with the surface being exposed to plasma.
13. 1 kinds of plasma process chamber, is characterized in that, described plasma process chamber comprises claim and asks gas spray described in 1 to 8 any one.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310688060.2A CN104715993B (en) | 2013-12-13 | 2013-12-13 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
| TW103142795A TWI541894B (en) | 2013-12-13 | 2014-12-09 | A plasma processing chamber, a gas sprinkler head and a method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310688060.2A CN104715993B (en) | 2013-12-13 | 2013-12-13 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104715993A true CN104715993A (en) | 2015-06-17 |
| CN104715993B CN104715993B (en) | 2017-02-22 |
Family
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| TW (1) | TWI541894B (en) |
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| CN108330467A (en) * | 2017-01-20 | 2018-07-27 | 应用材料公司 | The multilayer plasma resistant coating obtained by atomic layer deposition |
| KR20180123983A (en) * | 2017-05-10 | 2018-11-20 | 어플라이드 머티어리얼스, 인코포레이티드 | Multi-layer plasma erosion protection for chamber components |
| CN110634723A (en) * | 2018-06-21 | 2019-12-31 | 中微半导体设备(上海)股份有限公司 | Corrosion-resistant gas mixing device and plasma treatment equipment |
| CN112713074A (en) * | 2019-10-25 | 2021-04-27 | 中微半导体设备(上海)股份有限公司 | Gas shower head assembly and plasma processing equipment |
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| CN108330467A (en) * | 2017-01-20 | 2018-07-27 | 应用材料公司 | The multilayer plasma resistant coating obtained by atomic layer deposition |
| CN108330467B (en) * | 2017-01-20 | 2021-08-31 | 应用材料公司 | Multilayer plasma-resistant coating obtained by atomic layer deposition |
| CN108642475B (en) * | 2017-01-20 | 2021-08-31 | 应用材料公司 | Product and method |
| CN108642475A (en) * | 2017-01-20 | 2018-10-12 | 应用材料公司 | A kind of product and method |
| KR20180123983A (en) * | 2017-05-10 | 2018-11-20 | 어플라이드 머티어리얼스, 인코포레이티드 | Multi-layer plasma erosion protection for chamber components |
| KR102341307B1 (en) * | 2017-05-10 | 2021-12-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Multi-layer plasma erosion protection for chamber components |
| CN110634723A (en) * | 2018-06-21 | 2019-12-31 | 中微半导体设备(上海)股份有限公司 | Corrosion-resistant gas mixing device and plasma treatment equipment |
| CN112713074A (en) * | 2019-10-25 | 2021-04-27 | 中微半导体设备(上海)股份有限公司 | Gas shower head assembly and plasma processing equipment |
| CN112713074B (en) * | 2019-10-25 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Gas shower head assembly and plasma processing equipment |
| CN112908819A (en) * | 2019-12-03 | 2021-06-04 | 长鑫存储技术有限公司 | Gas distributor and processing method thereof |
| CN112908819B (en) * | 2019-12-03 | 2022-04-01 | 长鑫存储技术有限公司 | Gas distributor and processing method thereof |
| CN113594013A (en) * | 2020-04-30 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | Component, method and device for forming coating thereof, and plasma reaction device |
| CN113594013B (en) * | 2020-04-30 | 2024-01-26 | 中微半导体设备(上海)股份有限公司 | Component, method and device for forming coating layer and plasma reaction device |
| CN114068273A (en) * | 2020-07-31 | 2022-02-18 | 中微半导体设备(上海)股份有限公司 | Part and preparation method thereof and plasma reaction device |
| CN114068273B (en) * | 2020-07-31 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Component, preparation method thereof and plasma reaction device |
| CN114300336A (en) * | 2021-12-28 | 2022-04-08 | 拓荆科技股份有限公司 | Plasma reactor |
| CN114300336B (en) * | 2021-12-28 | 2024-02-23 | 拓荆科技股份有限公司 | Plasma reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104715993B (en) | 2017-02-22 |
| TW201537635A (en) | 2015-10-01 |
| TWI541894B (en) | 2016-07-11 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |