TW201432857A - 倒裝晶片封裝結構及其製作方法 - Google Patents

倒裝晶片封裝結構及其製作方法 Download PDF

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Publication number
TW201432857A
TW201432857A TW102136211A TW102136211A TW201432857A TW 201432857 A TW201432857 A TW 201432857A TW 102136211 A TW102136211 A TW 102136211A TW 102136211 A TW102136211 A TW 102136211A TW 201432857 A TW201432857 A TW 201432857A
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metal layer
pad
bump
flip chip
layer
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TW102136211A
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TWI529869B (zh
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xiao-chun Tan
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Silergy Corp
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  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract

本發明公開了一種倒裝晶片封裝結構及其製作方法，包括位於晶片之上的焊墊；位於晶片和所述焊墊之上的第一隔離層，所述第一隔離層設有通孔，以選擇性的將所述焊墊的部分上表面裸露；位於所述裸露焊墊上的第二金屬層和位於所述第二金屬層上的凸塊，其中，所述第二金屬層完全覆蓋所述裸露的焊墊，所述凸塊的側邊緣不接觸所述第一隔離層。本發明中所述凸塊的側邊緣不接觸所述第一隔離層，從而避免了因接觸而造成鈍化層破裂的問題，提高了封裝結構的可靠性，同時無需對第一隔離層進行附加保護，降低了封裝結構的成本；本發明中採用的第二金屬層可同時現實焊墊和凸塊的緊密焊接和對焊墊防腐蝕保護。

Description

倒裝晶片封裝結構及其製作方法
本發明關於一種半導體封裝技術，尤其關於一種倒裝晶片封裝結構及其製作方法。
焊料凸塊用以將半導體積體電路(通常稱為“晶片”)的有源表面連接至基板或引線框架上，以實現晶片和基板(或引線框架)間的電氣連接和機械連接，在倒裝晶片封裝技術中，凸塊的尺寸、結構以及傳導性能對封裝的結果有著很大的影響。
圖1所示為現有技術中的一種倒裝晶片封裝結構的示意圖，晶片1上具有一焊墊2，第一隔離層3覆蓋於所述晶片1上的剩餘區域，第一隔離層上具有一通孔以使所述焊墊的一部分裸露，焊料凸塊4(例如圖1中的柱狀凸塊)沉積在裸露的焊墊上表面。如圖1所示，現有的凸塊底面寬度往往要大於焊墊的寬度，以至於凸塊4的邊緣處會有一部分覆蓋在鈍化層的表面上。這樣，在封裝、運輸或可靠性測試中，由於熱應力和機械應力的影響，導致處於凸塊邊緣處的鈍化層的表面容易破碎。一般情況下，需 要一個保護層5(如尼龍材料)覆蓋於鈍化層和凸塊的接觸處以防止鈍化層表面發生破碎，但是在較大的壓力下，所述保護層並不能完全起到保護作用，此外增加的保護層也提高了最終產品的成本。
有鑑於此，本發明的目的在於提供一種新型的倒裝晶片封裝結構及其製作方法，解決了現有技術中晶片上的鈍化層表面與凸塊接觸中造成的破裂問題。
為解決上述技術問題，本發明採用如下技術方案：依據本發明的一種倒裝晶片封裝結構，包括：位於晶片之上的焊墊；位於晶片和所述焊墊之上的第一隔離層，所述第一隔離層設有通孔，以選擇性的將所述焊墊的部分上表面裸露；位於所述裸露焊墊上的第二金屬層和位於所述第二金屬層上的凸塊，其中，所述第二金屬層完全覆蓋所述裸露的焊墊，所述凸塊的側邊緣不接觸所述第一隔離層。
較佳的，所述第一隔離層包括晶片的鈍化保護層。
進一步的，所述第二金屬層用以使所述焊墊和所述凸塊緊密焊接。
較佳的，所述第二金屬層包括一鈦銅金屬層。
進一步的，所述第二金屬層用以使所述焊墊和所述凸塊緊密焊接並且防止剩餘的裸露焊墊表面被腐蝕。
較佳的，所述第二金屬層包括一鈦鎢銅金屬層。
較佳的，所述凸塊為錫凸塊或銅凸塊或金凸塊。
依據本發明的一種倒裝晶片封裝結構的製作方法，包括：在晶片上形成一焊墊；在晶片和所述焊墊上沉積第一隔離層，所述第一隔離層設有通孔，以選擇性的將所述焊墊的部分上表面裸露；在裸露焊墊上沉積第二金屬層，然後在所述第二金屬層上形成凸塊，其中，所述第二金屬層完全覆蓋所述裸露的焊墊，所述凸塊的側邊緣不接觸所述第一隔離層。
較佳的，所述第一隔離層包括晶片的鈍化保護層。
較佳的，形成所述第二金屬層的步驟包括：在所述焊墊的裸露表面先濺射一鈦金屬層，再在所述鈦金屬層上濺射一銅金屬層。
較佳的，形成所述第二金屬層的步驟包括：在所述焊墊的裸露表面先濺射一鈦金屬層，再在所述鈦金屬層上濺射一鎢金屬層，之後在所述鎢金屬層上濺射一銅金屬層。
採用依據本發明的倒裝晶片封裝結構，由於所述凸塊的側邊緣不與第一隔離層接觸，因此避免了由於接觸產生的第一隔離層破裂的問題，提高了封裝結構的可靠性，且無需對第一隔離層進行附加保護，降低了封裝結構的成本；覆蓋焊墊裸露區域的第二金屬層不但使所述焊墊與凸塊緊密焊接並有效保護了焊墊上表面的裸露金屬不受腐蝕。
1‧‧‧晶片
2‧‧‧焊墊
3‧‧‧第一隔離層
4‧‧‧凸塊
5‧‧‧保護層
6‧‧‧第二金屬層
圖1所示為採用現有技術的一種倒裝晶片封裝結構的示意圖；圖2所示為依據本發明的一種倒裝晶片封裝結構的示意圖；圖3A至圖3E所示依據本發明一實施例的倒裝晶片封裝結構製作方法的示意圖。
以下結合附圖對本發明的幾個較佳實施例進行詳細描述，但本發明並不僅僅限於這些實施例。本發明涵蓋任何在本發明的精髓和範圍上做的替代、修改、等效方法以及方案。為了使公眾對本發明有徹底的瞭解，在以下本發明較佳實施例中詳細說明了具體的細節，而對本領域技術人員來說沒有這些細節的描述也可以完全理解本發明。
以下結合具體實施例詳細說明依據本發明的倒裝晶片封裝結構。參考圖2，所示為依據本發明的一種倒裝晶片封裝結構的示意圖；在晶片1的有源表面有一焊墊2，第一隔離層3覆蓋所述晶片1和焊墊2之上，並且所述第一隔離層3設有通孔，以選擇性的將所述焊墊的部分上表面裸露。其中，所述焊墊的材質為鋁、鋁合金或其它導電材料；第一隔離層為一由氮化矽或氧化矽形成的鈍化保護層，其用以保護晶片不受腐蝕和其它損害。
進一步包括位於所述焊墊2上的第二金屬層6和位於所述第二金屬層6上的凸塊4，其中，所述凸塊4的側邊緣不接觸所述第一隔離層3。其中，所述第二金屬層6完全覆蓋所述裸露的焊墊2的表面，在一實施例中，所述第二金屬層用以使所述焊墊和凸塊緊密焊接，所述第二金屬層優選為鈦銅金屬層；在另一實施例中，所述第二金屬層用以使所述焊墊和凸塊緊密焊接並且防止剩餘的裸露焊墊表面被腐蝕，所述第二金屬層較佳為鈦鎢銅金屬層。本發明實施例中，所述凸塊4的側邊緣不接觸所述第一隔離層3，例如所述凸塊4可為錫、銅或金金屬形成的柱狀凸塊，其底面寬度小於頂端寬度，因此避免了由於接觸產生的第一隔離層3破裂的問題，提高了封裝結構的可靠性，同時無需額外的保護層對鈍化層進行保護，節省了成本。
以下結合附圖3A-3E所示的依據本發明一實施例的倒裝晶片封裝結構製作方法的示意圖來詳細說明本發明。
如圖3A所示，首先，在製備好的晶片1的有源表面上沉積一層金屬如鋁金屬作為焊墊2，焊墊可以由任何常規方式形成，如濺射、電鍍等。
其次，如圖3B所示，在晶片1的有源表面和焊墊2上覆蓋一第一隔離層3，所述第一隔離層為鈍化保護層，以保護晶片內部電路；再次，在所述第一隔離層3設置通孔，以選擇性的將所述焊墊的部分上表面裸露；如圖3C所示，所述通孔的形狀和大小可根據需要選擇，如本實施例中根據後續凸塊 的形狀以選擇通孔為長方形；之後，如圖3D所示，在所述通孔處的裸露的焊墊上沉積第二金屬層6，所述第二金屬層6用以使所述焊墊與所述凸塊4形成良好的電氣連接和機械連接，其具體步驟為在所述通孔內的裸露的焊墊2上先濺射一層鈦金屬層，再在所述鈦金屬層上濺射一層銅金屬層，其中，所述第二金屬層6完全覆蓋所述通孔內裸露的焊墊。需要說明的是，第二金屬層6中的鈦金屬層與焊墊的鋁金屬層具有良好的共結面，而上層的銅金屬層可以與構成凸塊的金屬材質具有良好的共結面，從而增強焊墊與凸塊連接的可靠性。
較佳的，所述第二金屬層6不但用以使所述焊墊與所述凸塊4形成良好的電氣連接和機械連接，並且防止剩餘的裸露焊墊表面被腐蝕，其具體步驟為在所述通孔內的裸露的焊墊2上先濺射一層鈦金屬層，再在所述鈦金屬層上濺射一層鎢金屬層，之後在所述鎢金屬層上濺射一層銅金屬層。這種較佳的方案能有效保護晶片內部電路不受腐蝕或其它因素影響，本發明選擇此較佳方案。
然後，如圖3E所示，在所述第二金屬層上沉積一金屬層以形成凸塊4，其具體步驟為：在通孔處焊墊的上面塗覆光刻膠；為了保證所述凸塊的底面覆蓋所述裸露的焊墊的一部分表面而非全部，需要對所述光刻膠進行選擇性的曝光及顯影，這樣可以形成與所述裸露的焊墊的部分表面對應的 電鍍凹槽；所述電鍍凹槽的側邊緣不接觸所述第一隔離層；在所述電鍍凹槽內電鍍金屬如銅金屬形成高度低於所述電鍍凹槽高度的凸塊；去除剩餘的光刻膠。
這裡，所述凸塊可以為錫凸塊或銅凸塊或金凸塊，並且所述凸塊的形狀為下窄上寬。
從上述倒裝晶片封裝結構的製作方法中可以看出，本發明實施例中的第二金屬層不但實現了使焊墊金屬層與凸塊緊密焊接，而且亦保護了未與凸塊焊接的裸露的焊墊金屬層，以防止裸露出來的焊墊被腐蝕而影響晶片的性能。
綜上所述，依照本發明所公開的倒裝晶片封裝結構以及製作方法，使所述凸塊的側邊緣不接觸所述第一隔離層，從而避免了凸塊與鈍化層接觸而造成鈍化層破裂的問題，提高了封裝結構的可靠性，同時無需對第一隔離層進行附加保護，降低了封裝結構的成本；本發明中採用的第二金屬層可同時現實焊墊和凸塊的緊密焊接和對焊墊防腐蝕保護。
以上對依據本發明的較佳實施例的倒裝晶片封裝結構及其製作方法進行了詳盡描述，本領域普通技術人員據此可以推知其他技術或者結構以及電路佈局、元件等均可應用於所述實施例。
依照本發明的實施例如上文所述，這些實施例並沒有詳盡敘述所有的細節，也不限制該發明僅為所述的具體實 施例。顯然，根據以上描述，可作很多的修改和變化。本說明書選取並具體描述這些實施例，是為了更好地解釋本發明的原理和實際應用，從而使所屬技術領域技術人員能很好地利用本發明以及在本發明基礎上的修改使用。本發明僅受申請專利範圍及其全部範圍和等效物的限制。
1‧‧‧晶片
2‧‧‧焊墊
3‧‧‧第一隔離層
4‧‧‧凸塊
6‧‧‧第二金屬層

Claims (14)

  1. 一種倒裝晶片封裝結構，其特徵在於，包括：位於晶片之上的焊墊；位於晶片和該焊墊之上的第一隔離層，該第一隔離層設有通孔，以選擇性的將該焊墊的部分上表面裸露；位於該裸露焊墊上的第二金屬層和位於該第二金屬層上的凸塊，其中，該第二金屬層完全覆蓋該裸露的焊墊，該凸塊的側邊緣不接觸該第一隔離層。
  2. 根據申請專利範圍第1項所述的倒裝晶片封裝結構，其中，該第一隔離層包括晶片的鈍化保護層。
  3. 根據申請專利範圍第1項所述的倒裝晶片封裝結構，其中，該第二金屬層用以使該焊墊和該凸塊緊密焊接。
  4. 根據申請專利範圍第3項所述的倒裝晶片封裝結構，其中，該第二金屬層包括一鈦銅金屬層。
  5. 根據申請專利範圍第1項所述的倒裝晶片封裝結構，其中，該第二金屬層用以使該焊墊和該凸塊緊密焊接並且防止剩餘的裸露焊墊表面被腐蝕。
  6. 根據申請專利範圍第5項所述的倒裝晶片封裝結構，其中，該第二金屬層包括一鈦鎢銅金屬層。
  7. 根據申請專利範圍第1項所述的倒裝晶片封裝結構，其中，該凸塊為錫凸塊或銅凸塊或金凸塊。
  8. 一種倒裝晶片封裝結構的製作方法，其特徵在於，包括： 在晶片上形成一焊墊；在晶片和該焊墊上沉積第一隔離層，該第一隔離層設有通孔，以選擇性的將該焊墊的部分上表面裸露；在裸露焊墊上沉積第二金屬層，然後在該第二金屬層上形成凸塊，其中，該第二金屬層完全覆蓋該裸露的焊墊，該凸塊的側邊緣不接觸該第一隔離層。
  9. 根據申請專利範圍第8項所述的倒裝晶片封裝結構的製作方法，其中，該第一隔離層包括晶片的鈍化保護層。
  10. 根據申請專利範圍第8項所述的倒裝晶片封裝結構的製作方法，其中，該第二金屬層用以使該焊墊和該凸塊緊密焊接。
  11. 根據申請專利範圍第10項所述的倒裝晶片封裝結構的製作方法，其中，形成該第二金屬層的步驟包括：在該焊墊的裸露表面先濺射一鈦金屬層，再在該鈦金屬層上濺射一銅金屬層。
  12. 根據申請專利範圍第8項所述的倒裝晶片封裝結構的製作方法，其中，該第二金屬層用以使該焊墊和該凸塊緊密焊接並且防止剩餘的裸露焊墊表面被腐蝕。
  13. 根據申請專利範圍第12項所述的倒裝晶片封裝結構的製作方法，其中，形成該第二金屬層的步驟包括：在該焊墊的裸露表面先濺射一鈦金屬層，再在該鈦金屬層上濺射一鎢金屬層，之後在該鎢金屬層上濺射一銅金屬層。
  14. 根據申請專利範圍第8項所述的倒裝晶片封裝結構的製作方法，其中，該凸塊為錫凸塊或銅凸塊或金凸塊。
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