TW201426837A - Dicing and die-bonding film equipped with separator board - Google Patents
Dicing and die-bonding film equipped with separator board Download PDFInfo
- Publication number
- TW201426837A TW201426837A TW102138084A TW102138084A TW201426837A TW 201426837 A TW201426837 A TW 201426837A TW 102138084 A TW102138084 A TW 102138084A TW 102138084 A TW102138084 A TW 102138084A TW 201426837 A TW201426837 A TW 201426837A
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- Prior art keywords
- bonding film
- wafer bonding
- separator
- film
- protruding
- Prior art date
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- 238000010030 laminating Methods 0.000 claims abstract description 4
- 238000005520 cutting process Methods 0.000 claims description 34
- 238000005192 partition Methods 0.000 claims description 32
- 239000012790 adhesive layer Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 description 61
- -1 polyethylene terephthalate Polymers 0.000 description 57
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 42
- 206010040844 Skin exfoliation Diseases 0.000 description 34
- 239000000853 adhesive Substances 0.000 description 33
- 230000001070 adhesive effect Effects 0.000 description 33
- 229920005989 resin Polymers 0.000 description 32
- 239000011347 resin Substances 0.000 description 32
- 239000000178 monomer Substances 0.000 description 31
- 239000003822 epoxy resin Substances 0.000 description 21
- 229920000058 polyacrylate Polymers 0.000 description 21
- 229920000647 polyepoxide Polymers 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- 238000000638 solvent extraction Methods 0.000 description 17
- 238000000576 coating method Methods 0.000 description 16
- 238000007789 sealing Methods 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 12
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000005011 phenolic resin Substances 0.000 description 10
- 229920005601 base polymer Polymers 0.000 description 9
- 239000000945 filler Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229920003986 novolac Polymers 0.000 description 9
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 238000001723 curing Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000005510 radiation hardening Methods 0.000 description 5
- 229920005992 thermoplastic resin Polymers 0.000 description 5
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000003522 acrylic cement Substances 0.000 description 3
- 125000005907 alkyl ester group Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- LMVLMHGTZULBRX-UHFFFAOYSA-N 2-[2,2,2-tris(2-hydroxyphenyl)ethyl]phenol Chemical compound OC1=CC=CC=C1CC(C=1C(=CC=CC=1)O)(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LMVLMHGTZULBRX-UHFFFAOYSA-N 0.000 description 2
- LJBWJFWNFUKAGS-UHFFFAOYSA-N 2-[bis(2-hydroxyphenyl)methyl]phenol Chemical compound OC1=CC=CC=C1C(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LJBWJFWNFUKAGS-UHFFFAOYSA-N 0.000 description 2
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 150000004702 methyl esters Chemical class 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229920001748 polybutylene Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- JRQJLSWAMYZFGP-UHFFFAOYSA-N 1,1'-biphenyl;phenol Chemical group OC1=CC=CC=C1.C1=CC=CC=C1C1=CC=CC=C1 JRQJLSWAMYZFGP-UHFFFAOYSA-N 0.000 description 1
- GDDPLWAEEWIQKZ-UHFFFAOYSA-N 1,1-diethoxydecane Chemical compound CCCCCCCCCC(OCC)OCC GDDPLWAEEWIQKZ-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- IAUGBVWVWDTCJV-UHFFFAOYSA-N 1-(prop-2-enoylamino)propane-1-sulfonic acid Chemical compound CCC(S(O)(=O)=O)NC(=O)C=C IAUGBVWVWDTCJV-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- UXCIJKOCUAQMKD-UHFFFAOYSA-N 2,4-dichlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC(Cl)=C3SC2=C1 UXCIJKOCUAQMKD-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 1
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- NPSJHQMIVNJLNN-UHFFFAOYSA-N 2-ethylhexyl 4-nitrobenzoate Chemical compound CCCCC(CC)COC(=O)C1=CC=C([N+]([O-])=O)C=C1 NPSJHQMIVNJLNN-UHFFFAOYSA-N 0.000 description 1
- 239000004808 2-ethylhexylester Substances 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical compound OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- DMSRIHVZKOZKRV-UHFFFAOYSA-N 2-methyl-1-(2-methylprop-2-enoylamino)propane-1-sulfonic acid Chemical compound CC(C)C(S(O)(=O)=O)NC(=O)C(C)=C DMSRIHVZKOZKRV-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- VSHMCEJCHYPYDU-UHFFFAOYSA-N 2-morpholin-4-ylpropanal Chemical compound O=CC(C)N1CCOCC1 VSHMCEJCHYPYDU-UHFFFAOYSA-N 0.000 description 1
- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- XFOFBPRPOAWWPA-UHFFFAOYSA-N 6-hydroxyhexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCO XFOFBPRPOAWWPA-UHFFFAOYSA-N 0.000 description 1
- JSZCJJRQCFZXCI-UHFFFAOYSA-N 6-prop-2-enoyloxyhexanoic acid Chemical compound OC(=O)CCCCCOC(=O)C=C JSZCJJRQCFZXCI-UHFFFAOYSA-N 0.000 description 1
- VZDDUFFXSBGRMP-UHFFFAOYSA-N 9h-fluoren-1-ylphosphane Chemical compound C12=CC=CC=C2CC2=C1C=CC=C2P VZDDUFFXSBGRMP-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- NASWBJZYPLHOAP-UHFFFAOYSA-N C(N)(=N)C(CC)S(=O)(=O)O Chemical compound C(N)(=N)C(CC)S(=O)(=O)O NASWBJZYPLHOAP-UHFFFAOYSA-N 0.000 description 1
- VPLKXGORNUYFBO-UHFFFAOYSA-N C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC VPLKXGORNUYFBO-UHFFFAOYSA-N 0.000 description 1
- TWFZGCMQGLPBSX-UHFFFAOYSA-N Carbendazim Natural products C1=CC=C2NC(NC(=O)OC)=NC2=C1 TWFZGCMQGLPBSX-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- BWPYBAJTDILQPY-UHFFFAOYSA-N Methoxyphenone Chemical compound C1=C(C)C(OC)=CC=C1C(=O)C1=CC=CC(C)=C1 BWPYBAJTDILQPY-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- DKDJOUJDZUASEO-UHFFFAOYSA-N P(=O)([O-])([O-])[O-].OCC[PH3+].OCC[PH3+].OCC[PH3+] Chemical compound P(=O)([O-])([O-])[O-].OCC[PH3+].OCC[PH3+].OCC[PH3+] DKDJOUJDZUASEO-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- URLYGBGJPQYXBN-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methyl prop-2-enoate Chemical compound OCC1CCC(COC(=O)C=C)CC1 URLYGBGJPQYXBN-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004069 aziridinyl group Chemical group 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- VSMKVYMEPNUODT-UHFFFAOYSA-N benzenecarboximidamide;benzoic acid Chemical compound NC(=[NH2+])C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 VSMKVYMEPNUODT-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- 229930006711 bornane-2,3-dione Natural products 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- FNAQSUUGMSOBHW-UHFFFAOYSA-H calcium citrate Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O FNAQSUUGMSOBHW-UHFFFAOYSA-H 0.000 description 1
- 239000001354 calcium citrate Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- JNPZQRQPIHJYNM-UHFFFAOYSA-N carbendazim Chemical compound C1=C[CH]C2=NC(NC(=O)OC)=NC2=C1 JNPZQRQPIHJYNM-UHFFFAOYSA-N 0.000 description 1
- 239000006013 carbendazim Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- GCFAUZGWPDYAJN-UHFFFAOYSA-N cyclohexyl 3-phenylprop-2-enoate Chemical compound C=1C=CC=CC=1C=CC(=O)OC1CCCCC1 GCFAUZGWPDYAJN-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- DZQISOJKASMITI-UHFFFAOYSA-N decyl-dioxido-oxo-$l^{5}-phosphane;hydron Chemical compound CCCCCCCCCCP(O)(O)=O DZQISOJKASMITI-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229920006228 ethylene acrylate copolymer Polymers 0.000 description 1
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- PJMPHNIQZUBGLI-UHFFFAOYSA-N fentanyl Chemical compound C=1C=CC=CC=1N(C(=O)CC)C(CC1)CCN1CCC1=CC=CC=C1 PJMPHNIQZUBGLI-UHFFFAOYSA-N 0.000 description 1
- 229960002428 fentanyl Drugs 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000004337 magnesium citrate Substances 0.000 description 1
- 229960005336 magnesium citrate Drugs 0.000 description 1
- 235000002538 magnesium citrate Nutrition 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920005629 polypropylene homopolymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- XDLNRRRJZOJTRW-UHFFFAOYSA-N thiohypochlorous acid Chemical compound ClS XDLNRRRJZOJTRW-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 235000013337 tricalcium citrate Nutrition 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- PLSARIKBYIPYPF-UHFFFAOYSA-H trimagnesium dicitrate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O PLSARIKBYIPYPF-UHFFFAOYSA-H 0.000 description 1
- 229920001862 ultra low molecular weight polyethylene Polymers 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/45001—Core members of the connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/732—Location after the connecting process
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Abstract
Description
本發明有關附分隔板之切割‧晶片接合薄膜。 The present invention relates to a ‧ wafer bonded film with a separator.
以往,在半導體裝置的製造步驟中,係使用在切割薄膜上層合有熱硬化性之晶片接合薄膜的切割‧晶片接合薄膜(例如,參考專利文獻1)。在使用該切割‧晶片接合薄膜的半導體裝置之製造步驟中,首先,將半導體晶圓貼合於切割‧晶片接合薄膜上將其固定,並在該狀態下進行切割。藉此,半導體晶圓被單片化為特定的尺寸,成為半導體晶片。接著,為了將固定在切割‧晶片接合薄膜上的半導體晶片從切割薄膜上剝離,而進行半導體晶片的拾取。隨後,將與晶片接合薄膜一起被拾取的半導體晶片透過晶片接合薄膜固定到基板等被黏著體上。 Conventionally, in the manufacturing process of a semiconductor device, a dicing wafer-bonding film in which a thermosetting film-bonding film is laminated on a dicing film is used (for example, refer to Patent Document 1). In the manufacturing process of the semiconductor device using the dicing die-bonding film, first, the semiconductor wafer is bonded to the dicing ‧ wafer bonding film to be fixed, and dicing is performed in this state. Thereby, the semiconductor wafer is singulated into a specific size to become a semiconductor wafer. Next, in order to peel the semiconductor wafer fixed on the dicing ‧ wafer bonding film from the dicing film, the semiconductor wafer is picked up. Subsequently, the semiconductor wafer picked up together with the wafer bonding film is fixed to the adherend such as a substrate through a wafer bonding film.
對於上述的切割‧晶片接合薄膜而言,係將根據半導體晶圓的尺寸而各自沖裁為圓形等的切割薄膜及晶片接合薄膜層合而成。切割‧晶片接合薄膜以晶片接合薄膜為貼合側以空出特定的間隔配置於長條狀的分隔板 上。與半導體晶圓貼合時,使用晶圓安裝裝置等將切割‧晶片接合薄膜從分隔板上剝離,隨後貼附到半導體晶圓上。 In the above-described dicing ‧ wafer bonding film, a dicing film and a wafer bonding film which are each punched into a circular shape or the like according to the size of the semiconductor wafer are laminated. The dicing ‧ wafer bonding film is disposed on the strip side with the wafer bonding film as the bonding side at a specific interval on. When bonding to a semiconductor wafer, the dicing ‧ wafer bonding film is peeled off from the separator using a wafer mounting device or the like, and then attached to the semiconductor wafer.
專利文獻1:日本特開2008-218571號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-218571
分隔板一般為了提高切割‧晶片接合薄膜的剝離性而利用脫模劑等進行脫模處理。然而,從分隔板上剝離切割‧晶片接合薄膜時,有時分隔板與晶片接合薄膜之間的剝離不能順利地進行,會有晶片接合薄膜殘留在分隔板上的狀態僅將切割薄膜剝離。 The separator is generally subjected to a mold release treatment by a release agent or the like in order to improve the peelability of the dicing die-bonding film. However, when the dicing die-bonding film is peeled off from the separator sheet, peeling between the separator sheet and the wafer bonding film may not proceed smoothly, and the wafer bonding film may remain on the separator sheet only in the state of cutting the film. Stripped.
本發明係鑒於前述問題而完成,其目的在於提供切割‧晶片接合薄膜容易從分隔板上剝離的附分隔板的切割‧晶片接合薄膜。 SUMMARY OF THE INVENTION The present invention has been made in view of the foregoing problems, and an object thereof is to provide a ‧ wafer bonded film with a separator which is easily cut from a separator sheet by a ‧ wafer bonded film
本申請案之發明人為了解決前述問題而進行研究之結果,發現藉由採用下述構成,可解決前述問題點,從而完成本發明。 The inventors of the present application have conducted research to solve the above problems, and have found that the above problems can be solved by adopting the following configuration, and the present invention has been completed.
即,本發明係一種附分隔板之切割‧晶片接 合薄膜,其係藉由將分隔板、俯視時於外周部具有向外側凸出的伸出片之晶片接合薄膜以及切割薄膜以該順序層合而成。 That is, the present invention is a cutting board with a separator board The film is formed by laminating the separator, the wafer bonding film having the protruding sheet protruding outward in the outer peripheral portion in plan view, and the dicing film in this order.
該附分隔板之切割‧晶片接合薄膜(以下亦稱為“附分隔板之薄膜”)中,晶片接合薄膜在俯視時於外周部具有向外側凸出的伸出片(以下有時簡稱為“伸出片”),因此在從形成有伸出片之側剝離時,該伸出片成為剝離的起點,結果,可以容易地進行切割‧晶片接合薄膜從分隔板之剝離。另一方面,在晶片接合薄膜不具有伸出片的情況下,作為晶片接合薄膜之剝離起點的區域呈更接近直線的狀態,在剝離初期晶片接合薄膜從分隔板接受到的應力(欲將晶片接合薄膜往分隔板側牽拉的應力,以下亦稱為“牽拉應力”)變大,會有產生以往的剝離不良之情況。 In the dicing of the separator ‧ the wafer bonding film (hereinafter also referred to as "the film with the separator"), the wafer bonding film has a protruding sheet which protrudes outward at the outer peripheral portion in a plan view (hereinafter sometimes referred to as a short film) The "stretching sheet" is thus the starting point of peeling when peeled off from the side on which the protruding sheet is formed, and as a result, the cutting can be easily performed, and the wafer bonding film is peeled off from the separator. On the other hand, in the case where the wafer bonding film does not have the protruding sheet, the region which is the starting point of the peeling of the wafer bonding film is in a state of being closer to a straight line, and the stress that the wafer bonding film receives from the separator at the initial stage of peeling (to be The stress which the wafer bonding film pulls toward the partition plate side, hereinafter also referred to as "drawing stress") becomes large, and there is a case where conventional peeling failure occurs.
該附分隔板之薄膜中,較好前述伸出片具有錐狀之前端部。由此,使伸出片的前端部與分隔板的接觸面積變小,可降低來自分隔板的牽拉應力,可更容易地剝離切割‧晶片接合薄膜。 In the film with a separator, it is preferred that the projecting piece has a tapered front end. Thereby, the contact area between the tip end portion of the protruding piece and the partition plate is made small, the pulling stress from the partition plate can be reduced, and the dicing ‧ wafer bonding film can be more easily peeled off.
該附分隔板之薄膜中,前述伸出片較好具有V字狀的前端部。藉由將伸出片的前端部設定為V字狀,可一方面保持伸出片的機械強度,一方面降低來自分隔板的牽拉應力,並且可成為以直線形成前端部之簡易結構,因此伸出片之形成變得容易。 In the film with a separator, the protruding piece preferably has a V-shaped front end portion. By setting the front end portion of the projecting piece to a V shape, it is possible to maintain the mechanical strength of the projecting piece on the one hand, and to reduce the pulling stress from the partition plate on the one hand, and to form a simple structure in which the front end portion is formed in a straight line. Therefore, the formation of the protruding piece becomes easy.
該附分隔板之薄膜中,前述V字狀之前端部 的內角較好為30°以上且90°以下。由此,可進一步降低來自分隔板的牽拉應力,可使切割‧晶片接合薄膜從分隔板之剝離更良好地進行。 In the film with the partition plate, the aforementioned V-shaped front end portion The inner angle is preferably 30 or more and 90 or less. Thereby, the tensile stress from the separator can be further reduced, and the dicing of the dicing die-bonding film from the separator can be performed more satisfactorily.
該附分隔板之薄膜中,與前述伸出片的伸出方向垂直之方向上,前述伸出片之根部的最小跨徑距離較好小於前述伸出片的根部與前端部間之中間部的最大跨徑距離。藉由如此使該伸出片的根部成為縮窄之形狀,即使剝離時伸出片的前端部(以及中間部)殘留在分隔板側,剝離越過根部進行時剝離的應力(從伸出片的前端部起、中間部從分隔板受到的牽拉應力與越過根部之區域(即,晶片接合薄膜的伸出片以外之區域,以下,亦將該區域稱為晶片接合薄膜的“基部”)被提起的應力之和)也會集中於根部從而將根部切斷。結果,可在伸出片之切斷部位附近設置基部的新剝離起點,可儘可能地抑制剝離的不良狀況產生。 In the film with the partitioning plate, the minimum span distance of the root portion of the protruding piece is preferably smaller than the intermediate portion between the root portion and the front end portion of the protruding piece in a direction perpendicular to the extending direction of the protruding piece The maximum span distance. By thus making the root portion of the projecting piece have a narrowed shape, even if the front end portion (and the intermediate portion) of the projecting piece remains on the partitioning plate side at the time of peeling, the peeling stress is peeled off when the root portion is peeled off (from the protruding piece) The front end portion, the intermediate portion receives the tensile stress from the partition plate and the region beyond the root portion (that is, the region other than the protruding piece of the wafer bonding film, and hereinafter, the region is also referred to as the "base portion" of the wafer bonding film. The sum of the stresses that are lifted) will also concentrate on the roots to cut the roots. As a result, a new peeling starting point of the base portion can be provided in the vicinity of the cut portion of the projecting piece, and the occurrence of peeling failure can be suppressed as much as possible.
該附分隔板之薄膜中,前述根部之最小跨徑距離較好為1mm以下。據此可以在剝離越過根部進行時促進根部的切斷,可容易地促進從基部開始的新的剝離。 In the film with a separator, the minimum span distance of the root portion is preferably 1 mm or less. According to this, it is possible to promote the cutting of the root portion when the peeling is performed over the root portion, and it is possible to easily promote the new peeling from the base portion.
該附分隔板之薄膜中,前述分隔板可為長條狀的分隔板。藉由在長條狀之分隔板上以特定間隔配置多個切割‧晶片接合薄膜,可以連續作業,因而可提高半導體裝置之製造效率。 In the film with the partition plate, the partition plate may be an elongated partition plate. By arranging a plurality of dicing ‧ wafer bonding films at a predetermined interval on the elongated separator plate, continuous operation can be performed, and thus the manufacturing efficiency of the semiconductor device can be improved.
該附分隔板之薄膜中,前述伸出片較好沿前述長條狀分隔板的長度方向配置。自捲出之長條狀之附分 隔板的切割‧晶片接合薄膜連續地剝離切割‧晶片接合薄膜時,若伸出片沿長條狀分隔板之長度方向配置,則剝離方向與長條狀分隔板的長度方向平行,因此可高效地進行連續剝離。 In the film with the partition plate, the protruding piece is preferably disposed along the longitudinal direction of the elongated partition plate. Long strip of self-winding When the dicing of the separator ‧ the wafer bonding film is continuously peeled off and the dicing film is bonded, if the protruding sheet is disposed along the longitudinal direction of the elongated partitioning plate, the peeling direction is parallel to the longitudinal direction of the elongated partitioning plate. Continuous peeling can be performed efficiently.
該附分隔板之薄膜中,前述晶片接合薄膜上,俯視時於前述晶片接合薄膜的外周之一部分形成有以隔著該外周上之前述伸出片的兩個伸出起點之該外周上的兩個點作為伸出起點,且以前述伸出片之兩個伸出起點作為伸出前端點之錐形伸出部,分別連接前述伸出片的兩個伸出起點與前述伸出部的兩個伸出起點的兩條線段較好位於通過前述伸出片之兩個伸出起點的任意一點以及前述伸出部之兩個伸出起點此三個點的圓弧的內側。以該形態,可說是將晶片接合薄膜的外周形狀本身形成為錐狀之相對較大的伸出部及與該伸出部的前端部分連結之相對較小的伸出片的兩段構成。藉由採用該構成,在將切割‧晶片接合薄膜從分隔板上剝離時,即使未進行伸出片之剝離,在剝離越過伸出片的根部(或伸出起點)時,亦可藉形成為錐狀而降低了來自分隔板之牽拉應力的伸出部引起剝離,可儘可能地抑制非預料之剝離的不良狀況產生。 In the film according to the separator, the wafer bonding film is formed on the outer periphery of the outer periphery of the extending film in the outer peripheral portion of the outer peripheral surface of the wafer bonding film in a plan view. Two points are used as extension starting points, and the two protruding starting points of the protruding piece are used as the protruding protrusions of the protruding front end point, respectively connecting the two extending starting points of the protruding piece and the protruding portion The two line segments extending from the starting point are preferably located at any point passing through the two extending starting points of the aforementioned projecting piece and the inner side of the arc of the two protruding points extending from the starting point. In this form, it can be said that the outer peripheral shape itself of the wafer bonded film is formed into a tapered portion and a relatively large projecting portion which is connected to the tip end portion of the projecting portion. According to this configuration, when the dicing die-bonding film is peeled off from the separator sheet, even if the peeling of the protruding sheet is not performed, it can be formed by peeling over the root portion (or extending the starting point) of the protruding sheet. The protrusion which is tapered to reduce the tensile stress from the partition plate causes peeling, and it is possible to suppress the occurrence of undesired peeling as much as possible.
該附分隔板之薄膜中,連接前述伸出部之伸出起點與伸出前端點(即,伸出片的伸出起點)之前述兩條線段較好為直線。藉此,可容易地形成伸出部,並且可以有效地降低來自分隔板之牽拉應力。 In the film with the partitioning plate, the two line segments connecting the projecting starting point of the projecting portion and the projecting end point (i.e., the projecting starting point of the projecting piece) are preferably straight lines. Thereby, the protrusion can be easily formed, and the pulling stress from the partition plate can be effectively reduced.
該附分隔板之薄膜中,前述兩條線段所成的 角度較好為120°以上且175°以下。藉由該構成,可有效地降低來自分隔板的牽拉應力,同時可充分地確保晶片接合薄膜中用於貼附半導體晶圓之有效面積。 In the film with the partition plate, the two line segments are formed The angle is preferably 120° or more and 175° or less. With this configuration, the pulling stress from the separator can be effectively reduced, and the effective area for attaching the semiconductor wafer in the wafer bonding film can be sufficiently ensured.
前述切割薄膜具有基材與層合於該基材上之黏著劑層,且在前述切割薄膜之前述黏著劑層上亦可層合前述晶片接合薄膜。 The dicing film has a substrate and an adhesive layer laminated on the substrate, and the wafer bonding film may be laminated on the adhesive layer of the dicing film.
1‧‧‧基材 1‧‧‧Substrate
2‧‧‧黏著劑層 2‧‧‧Adhesive layer
3、23‧‧‧晶片接合薄膜 3, 23‧‧‧ wafer bonding film
3a、33a~331‧‧‧伸出片 3a, 33a~331‧‧‧Exhibition
3A‧‧‧伸出部 3A‧‧‧Outreach
4‧‧‧半導體晶圓 4‧‧‧Semiconductor wafer
5‧‧‧半導體晶片 5‧‧‧Semiconductor wafer
6‧‧‧被黏著體 6‧‧‧Adhesive body
7‧‧‧接合金屬線 7‧‧‧ Bonded wire
8‧‧‧密封樹脂 8‧‧‧ Sealing resin
10‧‧‧附分隔板之切割‧晶片接合薄膜 10‧‧‧ Cutting with separator board ‧ wafer bonding film
11‧‧‧切割薄膜 11‧‧‧ cutting film
12‧‧‧切割‧晶片接合薄膜 12‧‧‧Cutting ‧ wafer bonding film
14‧‧‧分隔板 14‧‧‧ partition board
圖1A係表示本發明之一實施形態之附分隔板之切割‧晶片接合薄膜的剖面示意圖。 Fig. 1A is a schematic cross-sectional view showing a dicing die-bonding film with a separator according to an embodiment of the present invention.
圖1B係表示圖1A所示之附分隔板之切割‧晶片接合薄膜的晶片接合薄膜的透視俯視圖。 Fig. 1B is a perspective plan view showing a wafer bonding film of a dicing die-bonding film with a separator shown in Fig. 1A.
圖2係表示本發明之一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 2 is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to an embodiment of the present invention.
圖3係表示使用本發明之一實施形態之附分隔板之切割‧晶片接合薄膜之半導體裝置的製造步驟之一步驟的剖面示意圖。 Fig. 3 is a schematic cross-sectional view showing a step of manufacturing a semiconductor device using a dicing die-bonding film according to an embodiment of the present invention.
圖4係表示透過圖1A所示之附分隔板之切割‧晶片接合薄膜中之晶片接合薄膜安裝半導體晶片之例的剖面示意圖。 Fig. 4 is a schematic cross-sectional view showing an example of mounting a semiconductor wafer through a wafer bonding film in a dicing die-bonding film shown in Fig. 1A.
圖5A係表示本發明之另一實施形態之晶片接合薄膜的一部分之放大俯視圖。 Fig. 5A is an enlarged plan view showing a part of a wafer bonding film according to another embodiment of the present invention.
圖5B係表示本發明之另一實施形態之附分隔板之切 割‧晶片接合薄膜的晶片接合薄膜的透視俯視圖。 Figure 5B is a perspective view showing a partition plate according to another embodiment of the present invention. A perspective top view of a wafer bonded film of a ‧ wafer bonded film.
圖6A係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6A is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
圖6B係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6B is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
圖6C係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6C is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
圖6D係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6D is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
圖6E係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6E is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
圖6F係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6F is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
圖6G係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6G is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
圖6H係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6H is a partially enlarged plan view showing a projecting piece of the die bond film according to another embodiment of the present invention.
圖6I係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6I is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
圖6J係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6J is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
圖6K係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6K is a partially enlarged plan view showing a projecting piece of the wafer bonding film according to another embodiment of the present invention.
圖6L係表示本發明之另一實施形態之晶片接合薄膜 的伸出片之部分放大俯視圖。 6L is a view showing a wafer bonding film according to another embodiment of the present invention. Part of the protruding piece magnifies the top view.
圖6M係表示本發明之另一實施形態之晶片接合薄膜的伸出片之部分放大俯視圖。 Fig. 6M is a partially enlarged plan view showing a projecting piece of a wafer bonding film according to another embodiment of the present invention.
以下針對本發明之一實施形態的第一實施形態之附分隔板之切割‧晶片接合薄膜進行說明。圖1A係表示本發明之一實施形態之附分隔板之切割‧晶片接合薄膜之剖面示意圖,圖1B係其透視俯視圖。圖2係表示圖1B所示之晶片接合薄膜的伸出片之部分放大俯視圖。 Hereinafter, a dicing die-bonding film with a separator according to the first embodiment of the embodiment of the present invention will be described. Fig. 1A is a schematic cross-sectional view showing a dicing die-bonding film with a separator according to an embodiment of the present invention, and Fig. 1B is a perspective plan view thereof. Fig. 2 is a partially enlarged plan view showing a projecting piece of the wafer bonding film shown in Fig. 1B.
如圖1A及1B所示,附分隔板之切割‧晶片接合薄膜10具有在長條狀分隔板14上依次層合俯視為圓形的晶片接合薄膜3以及切割薄膜11之構成。藉由該等晶片接合薄膜3及切割薄膜11構成切割‧晶片接合薄膜12。另外,圖1B中,為了便於說明,未圖示切割薄膜11,僅示出長條狀之分隔板14以及層合於其上之晶片接合薄膜3。切割薄膜11藉由於基材1上層合黏著劑層2而構成,在黏著劑層2上層合直徑小於切割薄膜11的晶片接合薄膜3。切割薄膜11係以使黏著劑層2與晶片接合薄膜3相對之方式層合於分隔板14上。另外,切割薄膜11之超出晶片接合薄膜3的外周之部分可如圖1A所示 不與分隔板14接觸,也可以與分隔板14接觸。 As shown in FIGS. 1A and 1B, the dicing die-bonding film 10 with a separator has a structure in which a wafer bonding film 3 and a dicing film 11 which are circular in plan view are sequentially laminated on the elongated separator plate 14. The dicing die-bonding film 12 is constituted by the wafer bonding film 3 and the dicing film 11. In addition, in FIG. 1B, for the convenience of description, the dicing film 11 is not shown, and only the elongated partition plate 14 and the wafer bonding film 3 laminated thereon are shown. The dicing film 11 is formed by laminating the adhesive layer 2 on the substrate 1, and the wafer bonding film 3 having a smaller diameter than the dicing film 11 is laminated on the adhesive layer 2. The dicing film 11 is laminated on the partition plate 14 such that the adhesive layer 2 faces the wafer bonding film 3. In addition, a portion of the dicing film 11 beyond the outer circumference of the wafer bonding film 3 may be as shown in FIG. 1A. It is also not in contact with the partition plate 14, but may be in contact with the partition plate 14.
雖然未圖示,但本實施形態之附分隔板之切割‧晶片接合薄膜10中,在長條狀分隔板14上以特定間隔配置有複數個切割‧晶片接合薄膜12。藉此,可連續地進行切割‧晶片接合薄膜12自分隔板14之剝離以及其後之與半導體晶圓之貼合,可提高半導體裝置之製造效率。就可連續捲出的觀點而言,長條之附分隔板之切割‧晶片接合薄膜10亦可捲繞為捲筒狀的捲繞體。另外,附分隔板之切割‧晶片接合薄膜亦可為如下形態:複數個晶片接合薄膜以特定間隔配置在長條狀分隔板上,以覆蓋該等複數個晶片接合薄膜之方式層合長條狀之切割薄膜。 Although not shown, in the dicing die-bonding film 10 with a separator according to the present embodiment, a plurality of dicing ‧ wafer bonding films 12 are disposed on the elongated separator 14 at a predetermined interval. Thereby, the dicing of the wafer bonding film 12 from the separator 14 and the subsequent bonding to the semiconductor wafer can be performed continuously, and the manufacturing efficiency of the semiconductor device can be improved. From the viewpoint of continuous roll-out, the dicing of the strip with the separator ‧ the wafer bonding film 10 can also be wound into a roll-shaped wound body. In addition, the dicing die-bonding film with a separator may be in the form of a plurality of wafer bonding films disposed at a predetermined interval on the elongated separator plate, and laminated in such a manner as to cover the plurality of wafer bonding films. Strip-shaped cutting film.
長條狀分隔板14具有作為在供給實際應用之前保護晶片接合薄膜3之保護材之功能等。另外,長條狀分隔板14進而亦可以用作將晶片接合薄膜3轉印到黏著劑層2上時之支撐基材。長條狀分隔板14在將工件黏貼到晶片接合薄膜3上時被剝離。長條狀分隔板14的材質可列舉聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或利用含氟系剝離劑、長鏈烷基丙烯酸酯系剝離劑等之剝離劑進行表面塗佈後的塑膠薄膜或紙等。另外,分隔板可如本實施形態所示為長條狀物體,亦可為與切割薄膜11同樣地在俯視時呈大致圓形並且具有相同程度尺寸之形狀。 The strip-shaped partitioning plate 14 has a function as a protective material for protecting the wafer bonding film 3 before being supplied to the actual application. Further, the elongated separator 14 can be further used as a support substrate when the wafer bonding film 3 is transferred onto the adhesive layer 2. The elongated strip 14 is peeled off when the workpiece is adhered to the wafer bonding film 3. Examples of the material of the long strip-shaped separator 14 include polyethylene terephthalate (PET), polyethylene, polypropylene, or a release agent such as a fluorine-containing release agent or a long-chain alkyl acrylate release agent. A plastic film or paper after surface coating. Further, the partition plate may be a long object as in the present embodiment, or may have a substantially circular shape in a plan view and a shape having the same size as the dicing film 11.
長條狀分隔板14的厚度並無特別限制,較好 為25~100μm,更好為25~75μm,又更好為35~60μm。藉由設定為上述範圍,可保持作為保護材之強度,並且可容易地製作附分隔板之切割‧晶片接合薄膜10的捲繞體。 The thickness of the elongated strip 14 is not particularly limited, and is preferably It is 25 to 100 μm, more preferably 25 to 75 μm, and even more preferably 35 to 60 μm. By setting it as the above range, the strength as the protective material can be maintained, and the wound body of the dicing die-bonding film 10 with the separator can be easily produced.
如圖1B所示,晶片接合薄膜3在俯視時的外周部中具有向外側凸出之伸出片3a。另外,切割薄膜11以覆蓋包含該伸出片3a在內的整個晶片接合薄膜的方式層合。另外,晶片接合薄膜3可如圖1B所示具有一個伸出片3a,亦可具有兩個以上之複數個伸出片3a。 As shown in FIG. 1B, the wafer bonding film 3 has a projecting piece 3a which protrudes outward in the outer peripheral portion in a plan view. Further, the dicing film 11 is laminated so as to cover the entire wafer bonding film including the protruding sheet 3a. Further, the die-bonding film 3 may have one projecting piece 3a as shown in Fig. 1B, and may have two or more plurality of projecting pieces 3a.
如圖2所示,伸出片3a以自外周上的兩個伸出起點Ea、Ea起沿著伸出方向Z向外側凸出地伸出的方式形成。伸出起點Ea、Ea係自晶片接合薄膜3的基部之外周向外側開始伸出之點。夾著晶片接合薄膜3之伸出起點Ea、Ea,與伸出片3a相反側之部分成為晶片接合薄膜3的基部。伸出片3a俯視為略菱形,具有銳角的前端部的一部分被通過伸出起點Ea、Ea的線段切割的形狀,具體而言,具有如下形狀:自包含沿著伸出方向Z從晶片接合薄膜的圓形外周之起始部分的根部,經過沿著垂直於伸出方向Z的方向鼓起的中間部,到達錐形化為V字狀之前端部。藉由將伸出片3a的前端部設定為V字狀,可保持伸 出片3a之機械強度,並且可降低來自分隔板14的牽拉應力。另外,可成為以直線形成前端部之簡易結構,因此可以容易地形成伸出片。 2, the sheet 3a so as to protrude from the outer periphery of the two projecting starting E a, E a Z is formed from convex to protrude outward manner along the protruding direction. The extension starting points E a and E a are points which protrude from the outer side of the base of the wafer bonding film 3 in the circumferential direction. The extension starting points E a and E a sandwiching the wafer bonding film 3 and the portion opposite to the protruding sheet 3 a become the base of the wafer bonding film 3 . The projecting piece 3a is slightly diamond-shaped in plan view, and a part of the front end portion having an acute angle is cut by a line segment extending from the starting points E a , E a , specifically, a shape having a shape from the wafer extending along the extending direction Z The root portion of the initial portion of the circular outer circumference of the bonding film passes through the intermediate portion which is swollen in the direction perpendicular to the extending direction Z, and reaches the end portion which is tapered into a V shape. By setting the front end portion of the projecting piece 3a to a V shape, the mechanical strength of the projecting piece 3a can be maintained, and the pulling stress from the partitioning plate 14 can be reduced. Further, since the front end portion can be formed in a straight line, the protruding piece can be easily formed.
上述V字狀之前端部的內角α雖沒有特別限制,但是就切割‧晶片接合薄膜12從分隔板14剝離的容易性之觀點而言,其上限較好為90°以下,更好為75°以下。另外,上述內角α之下限較好為30°以上,更好為45°以上。 Although the inner angle α of the V-shaped front end portion is not particularly limited, the upper limit of the dicing of the wafer bonding film 12 from the separator 14 is preferably 90° or less, more preferably Below 75°. Further, the lower limit of the inner angle α is preferably 30 or more, more preferably 45 or more.
與伸出片3a之伸出方向Z垂直的方向之前述伸出片的根部的最小跨徑距離dmin(即本實施方式的伸出起點Ea、Ea間的距離)較好小於伸出片3a的根部與前端部之間的中間部的最大跨徑距離dmax(即,本實施形態之鈍角的前端部之頂點間之距離)。藉由成為使伸出片3a的根部與中間部相比縮窄的形狀,即使剝離時伸出片3a之前端部(以及中間部)殘留在分隔板14側,剝離越過根部進行時剝離的應力也會集中於根部,因而可促進根部之切斷。結果,可在伸出片3a的切斷部位附近設置晶片接合薄膜3的新的剝離起點,可儘可能地抑制剝離的不良狀況之產生。 3a of the projecting piece projecting the Z direction perpendicular to the extending direction of the root piece minimum span distance d min (i.e., the starting point of the present embodiment extends E a, the distance between E a) is preferably less than the projecting The maximum span distance d max of the intermediate portion between the root portion and the tip end portion of the sheet 3a (that is, the distance between the vertices of the tip end portion of the obtuse angle of the present embodiment). By making the root portion of the protruding piece 3a narrower than the intermediate portion, even before the peeling, the end portion (and the intermediate portion) of the protruding piece 3a remains on the side of the partitioning plate 14, and the peeling is peeled off when the root portion is peeled off. Stress is also concentrated on the roots, thus facilitating the cutting of the roots. As a result, a new peeling starting point of the wafer bonding film 3 can be provided in the vicinity of the cut portion of the protruding piece 3a, and the occurrence of peeling defects can be suppressed as much as possible.
基於促進剝離時之根部切斷之觀點,根部的最小跨徑距離dmin較好為1mm以下。基於根部之機械強度的觀點,最小跨徑距離dmin之下限較好為0.5mm以上。 The minimum span distance d min of the root is preferably 1 mm or less from the viewpoint of promoting root cutting at the time of peeling. From the viewpoint of the mechanical strength of the root, the lower limit of the minimum span distance d min is preferably 0.5 mm or more.
根部之最小跨徑距離dmin相對於中間部之最 大跨徑距離dmax之比(dmin/dmax),從確保伸出片之機械強度與促進根之剝離時的切斷之平衡的觀點而言,較好為0.7以下,更好為0.5以下。 The ratio of the minimum span distance d min of the root to the maximum span distance d max of the intermediate portion (d min /d max ), from the viewpoint of ensuring the balance between the mechanical strength of the projecting piece and the cutting of the root stripping It is preferably 0.7 or less, more preferably 0.5 or less.
伸出片3a自基部伸出的伸出量h,只要伸出片3a可以作為切割‧晶片接合薄膜12的剝離起點發揮作用則沒有特別限制,但較好為1~10mm,更好為3~5mm。另外,伸出量h係以通過伸出起點Ea、Ea之直線與通過伸出片3a之最前端點之垂直於伸出方向Z的直線之間的距離求出。通過伸出起點Ea、Ea之直線不垂直於伸出方向Z時,係以直線將伸出起點Ea、Ea連接的線段之二等分點與通過伸出片3a之前端點的垂直於伸出方向Z的直線之間的距離求出。 The amount of protrusion h of the projecting piece 3a extending from the base portion is not particularly limited as long as the projecting piece 3a functions as a peeling starting point of the dicing die-bonding film 12, but is preferably 1 to 10 mm, more preferably 3 to 3 5mm. Further, the amount of protrusion h is obtained by the distance between the straight line extending from the starting points E a and E a and the straight line passing through the leading end point of the extending piece 3a perpendicular to the extending direction Z. When the straight line extending from the starting points E a , E a is not perpendicular to the extending direction Z, the straight line bisects the line connecting the starting points E a , E a and the end points passing through the front end of the protruding piece 3a The distance between the straight lines perpendicular to the extending direction Z is found.
伸出片3a之中間部之從基部伸出的伸出量hmid並無特別限制,但較好為0.5~10mm,更好為0.5~5mm。另外,中間部之伸出量hmid係以通過伸出起點Ea、Ea的直線與通過獲得伸出片3a的中間部的最大跨徑距離dmax之兩點的直線間之距離求出。通過伸出起點Ea、Ea之直線或者通過獲得伸出片3a之中間部的最大跨徑距離dmax之兩點的直線不垂直於伸出方向Z時,係以直線將伸出起點Ea、Ea連接之線段之二等分點與以直線連接獲得伸出片3a的中間部之最大跨徑距離dmax的兩點的線段的二等分點間之距離求出。 The amount of protrusion h mid of the intermediate portion of the projecting piece 3a extending from the base portion is not particularly limited, but is preferably 0.5 to 10 mm, more preferably 0.5 to 5 mm. Further, the amount of protrusion h mid of the intermediate portion is obtained by the distance between the straight line passing through the extended starting points E a and E a and the straight line passing through the two points of the maximum span distance d max of the intermediate portion of the extending piece 3a. . When a straight line extending from the starting point E a , E a or by obtaining two points of the maximum span distance d max of the intermediate portion of the projecting piece 3a is not perpendicular to the extending direction Z, the starting point E is extended by a straight line. The distance between the bisector of the line segment connecting a and E a is determined by the distance between the bisectors of the line segment connecting the two points of the maximum span distance d max of the intermediate portion of the projecting piece 3a in a straight line.
如圖1B所示,伸出片3a較好為沿著長條狀附分隔板14之長度方向X配置。在將切割‧晶片接合薄 膜12從捲出之長條狀附分隔板的薄膜10連續地剝離時,如果伸出片3a沿著長條狀分隔板14的長度方向X配置,則剝離方向與長條狀分隔板14的長度方向X平行,因此,可高效率地進行連續剝離。 As shown in FIG. 1B, the projecting piece 3a is preferably disposed along the longitudinal direction X of the elongated attached partitioning plate 14. In the cutting ‧ wafer bonding thin When the film 12 is continuously peeled off from the elongated film 10 with the separator attached, if the protruding piece 3a is disposed along the longitudinal direction X of the elongated partitioning plate 14, the peeling direction is separated from the long strip. Since the longitudinal direction X of the plate 14 is parallel, continuous peeling can be performed efficiently.
另外,伸出片沿著長條狀分隔板14之長度方向X配置時,較好在沿著長條狀分隔板14之長度方向X的晶片接合薄膜3的兩端部(圖1B中圖示的晶片接合薄膜3之設置有伸出片3a的左端、及與其相反側之未設置伸出片的右端)設置有伸出片。藉此,尤其,不論形成為捲繞體的長條狀之附分隔板之切割‧晶片接合薄膜10之捲出方向為何,均可進行切割‧晶片接合薄膜12的連續剝離。 Further, when the projecting piece is disposed along the longitudinal direction X of the elongated partitioning plate 14, it is preferable to have both end portions of the wafer bonding film 3 along the longitudinal direction X of the elongated partitioning plate 14 (in FIG. 1B). The illustrated wafer-bonding film 3 is provided with a projecting piece provided with a left end of the projecting piece 3a and a right end of the opposite side of which the protruding piece is not provided. Thereby, in particular, regardless of the winding direction of the slit-shaped wafer-bonding film 10 formed as a long strip-shaped separator of the wound body, the continuous peeling of the wafer-bonding film 12 can be performed.
晶片接合薄膜3之層結構,如本實施形態所示,列舉為僅由接著劑層的單層所成之結構、或在芯材料的單面或兩面形成接著劑層之多層結構者等。至於上述芯材料,列舉為薄膜(例如聚醯亞胺薄膜、聚酯薄膜、聚對苯二甲酸乙二酯薄膜、聚萘二甲酸乙二酯薄膜、聚碳酸酯薄膜等)、以玻璃纖維或塑膠製不織纖維強化後的樹脂基板、矽基板或玻璃基板等。 As shown in the present embodiment, the layer structure of the wafer bonding film 3 is exemplified by a structure in which only a single layer of an adhesive layer is formed, or a multilayer structure in which an adhesive layer is formed on one surface or both surfaces of a core material. As for the above core material, it is exemplified by a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a glass fiber or A resin substrate, a ruthenium substrate, or a glass substrate reinforced with a non-woven fabric made of plastic.
至於構成晶片接合薄膜3之接著劑組成物,列舉為併用熱塑性樹脂及熱硬化性樹脂者。 The adhesive composition constituting the die-bonding film 3 is exemplified by a thermoplastic resin and a thermosetting resin.
至於前述熱硬化性樹脂,列舉為酚樹脂、胺 基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂或熱硬化性聚醯亞胺樹脂等。該等樹脂可單獨使用或併用兩種以上使用。尤其,以會腐蝕半導體元件的離子性雜質等之含量少的環氧樹脂較佳。另外,環氧樹脂之硬化劑較好為酚樹脂。 As the above thermosetting resin, it is exemplified as a phenol resin or an amine. A base resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a polyoxyxylene resin, or a thermosetting polyimide resin. These resins may be used singly or in combination of two or more. In particular, an epoxy resin having a small content of ionic impurities or the like which corrodes a semiconductor element is preferable. Further, the hardener of the epoxy resin is preferably a phenol resin.
作為前述環氧樹脂,只要是通常作為接著劑組成物使用之環氧樹脂則沒有特別限制,可使用例如雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三(羥苯基)甲烷型、四(羥苯基)乙烷型等二官能環氧樹脂或多官能環氧樹脂、或者乙內醯脲型、異氰脲酸三縮水甘油酯型或者縮水甘油胺型等環氧樹脂。該等可單獨使用或併用兩種以上使用。該等環氧樹脂中,以酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三(羥苯基)甲烷型環氧樹脂或四(羥苯基)乙烷型環氧樹脂最佳。其理由為該等環氧樹脂與作為硬化劑的酚醛樹脂富有反應性,耐熱性等優異。 The epoxy resin is not particularly limited as long as it is usually used as an adhesive composition, and for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, and hydrogenation can be used. Bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, anthraquinone type, phenol novolac type, o-cresol novolac type, tris(hydroxyphenyl)methane type, tetrakis(hydroxyphenyl)ethane type An epoxy resin such as a difunctional epoxy resin or a polyfunctional epoxy resin, or a carbendazim type, an isocyanuric acid triglycidyl ester type or a glycidylamine type. These may be used singly or in combination of two or more. Among these epoxy resins, a novolak type epoxy resin, a biphenyl type epoxy resin, a tris(hydroxyphenyl)methane type epoxy resin or a tetrakis (hydroxyphenyl)ethane type epoxy resin is preferable. The reason for this is that the epoxy resin is highly reactive with a phenol resin as a curing agent, and is excellent in heat resistance and the like.
前述酚樹脂係作為前述環氧樹脂之硬化劑發揮作用者,列舉為例如苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、苯酚聯苯樹脂、壬基苯酚酚醛清漆樹脂等之酚醛清漆型酚樹脂、甲階酚醛樹脂型酚醛樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。該等可單獨使用或併用兩種以上使用。該等酚樹脂中以苯酚酚醛清漆樹脂、苯酚芳烷基樹脂等最佳。其 理由為可提高半導體裝置的連接可靠性。 The phenol resin functions as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a phenol biphenyl resin. A novolak type phenol resin such as a nonylphenol novolak resin, a resol type phenol resin, a polyhydroxy styrene such as polyparaxyl styrene or the like. These may be used singly or in combination of two or more. Among these phenol resins, phenol novolak resin, phenol aralkyl resin and the like are preferred. its The reason is that the connection reliability of the semiconductor device can be improved.
前述環氧樹脂與酚樹脂的調配比例較好以例如前述環氧樹脂成分中的環氧基每1當量,酚樹脂中的羥基成為0.5~2.0當量的方式進行調配。更好為0.8~1.2當量。即,其理由為若兩者的調配比例在前述範圍以外,則無法進行充分的硬化反應,環氧樹脂硬化物之特性容易變差。 The blending ratio of the epoxy resin and the phenol resin is preferably such that the epoxy group in the epoxy resin component is equivalent to 1 equivalent of the epoxy group and the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents. More preferably 0.8 to 1.2 equivalents. In other words, if the blending ratio of the two is outside the above range, a sufficient curing reaction cannot be performed, and the properties of the cured epoxy resin are likely to be deteriorated.
至於前述熱塑性樹脂,可列舉天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、尼龍6或尼龍6,6等聚醯胺樹脂、苯氧樹脂、丙烯酸系樹脂、PET或PBT等之飽和聚酯樹脂、聚醯胺醯亞胺樹脂或者含氟樹脂等。該等熱塑性樹脂可單獨使用或併用兩種以上使用。該等熱塑性樹脂中,最好為離子性雜質少、耐熱性高、可確保半導體元件之可靠性的丙烯酸系樹脂。 As the thermoplastic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutylene may be mentioned. Alkene resin, polycarbonate resin, thermoplastic polyimide resin, nylon 6 or nylon 6,6, etc. Polyamide resin, phenoxy resin, acrylic resin, saturated polyester resin such as PET or PBT, polyamidoxime Imine resin or fluorine-containing resin. These thermoplastic resins may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylic resin having a small amount of ionic impurities, high heat resistance, and reliability of a semiconductor element is preferable.
作為前述丙烯酸系樹脂並無特別限制,可列舉為以一種或兩種以上的具有碳數30以下、特別是碳數4~18之直鏈或支鏈烷基之丙烯酸酯或甲基丙烯酸酯作為成分的聚合物(丙烯酸系共聚物)等。作為前述烷基可列舉為例如甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八 烷基或者二十烷基等。 The acrylic resin is not particularly limited, and examples thereof include one or two or more kinds of acrylates or methacrylates having a linear or branched alkyl group having a carbon number of 30 or less, particularly a carbon number of 4 to 18. A polymer (acrylic copolymer) of the component or the like. The alkyl group may, for example, be a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group or a cyclohexyl group. -ethylhexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl Alkyl or eicosyl and the like.
另外,作為形成前述聚合物之其他單體並無特別限制,可列舉為例如丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯等含縮水甘油基之單體、丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等含羧基之單體、馬來酸酐或衣康酸酐等酸酐單體、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥甲基環己基)-甲酯等含羥基之單體、苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯醯胺基-2-甲基丙磺酸、(甲基)丙烯醯胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等含磺酸基之單體、丙烯醯磷酸-2-羥基乙酯等含磷酸基之單體、苯乙烯單體、或者丙烯腈等。 Further, the other monomer forming the polymer is not particularly limited, and examples thereof include a glycidyl group-containing monomer such as glycidyl acrylate or glycidyl methacrylate, acrylic acid, methacrylic acid, and carboxyethyl acrylate. a carboxyl group-containing monomer such as carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid; an anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate; 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, (meth)acrylic acid 10 - Hydroxy oxime ester, 12-hydroxylauryl (meth) acrylate or hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl)-methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2-(A Sulfhydryl amide-methyl-2-methylpropanesulfonic acid, (meth) acrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate or (meth) propylene phthaloxy naphthalene sulfonic acid A phosphate group-containing monomer such as an acid group monomer or a acrylofluoride-2-hydroxyethyl group; a styrene monomer; or acrylonitrile.
另外,晶片接合薄膜3中,根據其用途可以適當調配填料。填料之調配可賦予導電性或提高導熱性、調節彈性率等。作為上述填料可列舉為無機填料及有機填料,但基於提高操作性、提高熱導電性、調節熔融黏度、賦予觸變性等特性之觀點而言,較好為無機填料。作為前述無機填料並無特別限制,可列舉為例如氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶質二氧 化矽、非晶質二氧化矽等。該等可單獨使用或併用兩種以上使用。就提高熱導電性之觀點而言,較好為氧化鋁、氮化鋁、氮化硼、結晶質二氧化矽、非晶質二氧化矽。另外,就上述各特性之平衡良好的觀點而言,較好為結晶質二氧化矽或非晶質二氧化矽。另外,為了賦予導電性、提高熱導電性等,亦可使用導電性物質(導電填料)作為無機填料。至於導電填料可以列舉使銀、鋁、金、銅、鎳、導電性合金等形成為球形、針狀、薄片狀的金屬粉、氧化鋁等金屬氧化物、無定形碳黑、石墨等。前述填料之平均粒徑為0.1~80μm。另外,填料之平均粒徑為例如以光度式粒度分佈計(HORIBA製,裝置名:LA-910)求出之值。 Further, in the wafer bonding film 3, a filler can be appropriately formulated depending on the use thereof. The formulation of the filler can impart conductivity or improve thermal conductivity, adjust elastic modulus, and the like. The filler is exemplified by an inorganic filler and an organic filler. From the viewpoint of improving workability, improving thermal conductivity, adjusting melt viscosity, and imparting characteristics such as thixotropic properties, an inorganic filler is preferred. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate. Whisker, boron nitride, crystalline dioxygen Huayu, amorphous cerium oxide, and the like. These may be used singly or in combination of two or more. From the viewpoint of improving thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline cerium oxide, or amorphous cerium oxide is preferred. Further, from the viewpoint of a good balance of the above characteristics, crystalline ceria or amorphous ceria is preferred. Further, in order to impart conductivity, improve thermal conductivity, and the like, a conductive material (conductive filler) may be used as the inorganic filler. Examples of the conductive filler include a metal powder such as silver, aluminum, gold, copper, nickel, or a conductive alloy formed into a spherical shape, a needle shape, or a flake shape, a metal oxide such as alumina, amorphous carbon black, or graphite. The filler has an average particle diameter of 0.1 to 80 μm. Further, the average particle diameter of the filler is, for example, a value obtained by a photometric particle size distribution meter (manufactured by HORIBA, device name: LA-910).
前述填料之調配量相對於熱固性樹脂成分、熱塑性樹脂成分以及填料之合計100重量份較好為5重量份以上,更好為10重量份以上且95重量份以下,又更好為20重量份以上且90重量份以下。 The amount of the filler is preferably 5 parts by weight or more, more preferably 10 parts by weight or more and 95 parts by weight or less, still more preferably 20 parts by weight or more, based on 100 parts by weight of the total of the thermosetting resin component, the thermoplastic resin component, and the filler. And 90 parts by weight or less.
另外,晶片接合薄膜3中除了上述填料以外,尚可根據需要適當調配其他添加劑。作為其他添加劑可列舉為例如阻燃劑、矽烷偶合劑或離子捕獲劑等。作為前述阻燃劑,可列舉為例如三氧化二銻、五氧化二銻、溴化環氧樹脂等。該等可單獨使用或併用兩種以上使用。前述矽烷偶合劑可列舉為例如β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。該等化合物可單獨使 用或併用兩種以上使用。前述離子捕獲劑可列舉為例如水滑石類、氫氧化鉍等。該等離子捕獲劑可單獨使用或併用兩種以上使用。 Further, in addition to the above filler, the wafer bonding film 3 may be appropriately blended with other additives as needed. Examples of other additives include a flame retardant, a decane coupling agent, an ion trapping agent, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These may be used singly or in combination of two or more. The aforementioned decane coupling agent may, for example, be β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, γ-glycidoxypropylmethyl group. Diethoxydecane, etc. These compounds can be made separately Use or use two or more types together. Examples of the ion trapping agent include hydrotalcites, barium hydroxide, and the like. The plasma capturing agent may be used singly or in combination of two or more.
晶片接合薄膜3之厚度(層合體之情況下為總厚度)並無特別限制,例如可以從1~200μm的範圍選擇,較好為5~100μm,更好為10~80μm。 The thickness of the wafer bonding film 3 (the total thickness in the case of a laminate) is not particularly limited, and may be, for example, selected from the range of 1 to 200 μm, preferably 5 to 100 μm, more preferably 10 to 80 μm.
前述基材1較好為具有紫外線透射性者,且係成為切割薄膜11之強度母體者。列舉為例如低密度聚乙烯、線性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、離聚物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二申酸乙二酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳族聚醯胺、聚苯硫醚、芳醯胺(紙)、玻璃、玻璃布、含氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、聚矽氧樹脂、金屬(箔)、紙等。 The base material 1 is preferably one having ultraviolet light transmittance and is a strength matrix of the dicing film 11. Listed as, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutylene, polymethyl Polyolefin such as pentene, ethylene-vinyl acetate copolymer, ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, ethylene-butene Copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polyester, polycarbonate, polyimide, polyether ether Ketones, polyimines, polyetherimine, polyamines, wholly aromatic polyamines, polyphenylene sulfides, linalylamines (paper), glass, glass cloth, fluororesin, polyvinyl chloride, poly Vinylidene chloride, cellulose resin, polyoxyxylene resin, metal (foil), paper, and the like.
且作為基材1之材料可列舉為前述樹脂之交聯物等聚合物。前述塑膠薄膜可未經拉伸使用,亦可根據需要使用經單軸或雙軸拉伸處理者。若藉拉伸處理等而成 為賦予熱收縮性的樹脂片,則在切割後使該基材1熱收縮,藉此可減小黏著劑層2與晶片接合薄膜3的膠黏面積,從而可以容易地回收半導體晶片(半導體元件)。 Further, as the material of the substrate 1, a polymer such as a crosslinked product of the above resin may be mentioned. The aforementioned plastic film may be used without stretching, and may be subjected to uniaxial or biaxial stretching treatment as needed. If it is stretched, etc. In order to impart heat shrinkability to the resin sheet, the substrate 1 is thermally shrunk after dicing, whereby the adhesive area of the adhesive layer 2 and the wafer bonding film 3 can be reduced, so that the semiconductor wafer can be easily recovered (semiconductor element) ).
另外,為了提高與鄰接層的密著性、保持性等,基材1之表面可實施慣用之表面處理,例如,鉻酸處理、臭氧曝露、火焰曝露、高壓電擊曝露、電離輻射線處理等化學或物理處理、利用底塗劑(例如後述的黏著物質)之塗布處理。前述基材1可以適當地選擇使用同種或不同種者,亦可根據需要使用將數種材料共混而成者。 Further, in order to improve adhesion to the adjacent layer, retention, and the like, the surface of the substrate 1 can be subjected to conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, ionizing radiation treatment, and the like. Or a physical treatment or a coating treatment using a primer (for example, an adhesive described later). The substrate 1 may be appropriately selected from the same species or different types, and a plurality of materials may be blended as needed.
基材1的厚度並無特別限制,可適當決定,但一般為5~200μm左右。 The thickness of the substrate 1 is not particularly limited and may be appropriately determined, but is generally about 5 to 200 μm.
黏著劑層2之形成中使用之的黏著劑並無特別限制,例如,可以使用丙烯酸系黏著劑、橡膠系黏著劑等一般的感壓黏著劑。作為前述感壓黏著劑,從半導體晶圓或玻璃等避忌污染之電子零件之利用超純水或醇等有機溶劑之清潔洗滌性等觀點考慮,較好為以丙烯酸系聚合物為基礎聚合物之丙烯酸系黏著劑。 The adhesive used for the formation of the adhesive layer 2 is not particularly limited, and for example, a general pressure-sensitive adhesive such as an acrylic adhesive or a rubber-based adhesive can be used. The pressure-sensitive adhesive is preferably an acrylic polymer-based polymer from the viewpoints of cleaning and washing properties of an organic solvent such as an ultrapure water or an alcohol, such as a semiconductor wafer or glass. Acrylic adhesive.
作為前述丙烯酸系聚合物可列舉為例如使用(甲基)丙烯酸烷酯(例如,甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷 酯、十六烷酯、十八烷酯、二十烷酯等烷基之碳數1~30、特別是碳數4~18之直鏈或支鏈烷酯等)及(甲基)丙烯酸環烷酯(例如,環戊酯、環己酯等)之一種或兩種以上作為單體成分之丙烯酸系聚合物等。另外,(甲基)丙烯酸酯係指丙烯酸酯及/或甲基丙烯酸酯,本發明之(甲基)全部表示相同的含義。 The acrylic polymer may, for example, be an alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, or third butyl ester). , amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, thirteen Alkyl ester, tetradecane a carbon number of an alkyl group such as an ester, a hexadecyl ester, an octadecyl ester or an eicosyl ester of 1 to 30, particularly a linear or branched alkyl ester having a carbon number of 4 to 18, and a (meth)acrylic acid ring An acrylic polymer or the like having one or two or more kinds of alkyl esters (for example, cyclopentyl ester or cyclohexyl ester) as a monomer component. Further, (meth) acrylate means acrylate and/or methacrylate, and all (meth) of the present invention have the same meaning.
為了改善凝聚力、耐熱性等,前述丙烯酸系聚合物亦可根據需要含有可與前述(甲基)丙烯酸烷酯或(甲基)丙烯酸環烷酯共聚合之其他單體成分所對應之單元。該單體成分可列舉為例如:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等含羧基之單體;馬來酸酐、衣康酸酐等酸酐單體;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥甲基環己基)甲酯等含羥基之單體;苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯醯胺基-2-甲基丙磺酸、(甲基)丙烯醯胺基丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基之單體;丙烯醯磷酸2-羥基乙酯等含磷酸基之單體;丙烯醯胺、丙烯腈等。該等可共聚合之單體成分可以使用一種或兩種以上。該等可共聚合之單體之使用量較好為全部單體成分的40重量%以下。 In order to improve cohesive force, heat resistance, and the like, the acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl (meth)acrylate, if necessary. The monomer component may, for example, be a carboxyl group such as acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid. Monomer; anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, ( 6-hydroxyhexyl methacrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxy decyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (meth) acrylate (4) a hydroxyl group-containing monomer such as -hydroxymethylcyclohexyl)methyl ester; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropanesulfonic acid, (meth)acryl a sulfonic acid group-containing monomer such as amidinopropanesulfonic acid, sulfopropyl (meth)acrylate, (meth)acryloxynaphthalenesulfonic acid or the like; a phosphate-containing monomer such as 2-hydroxyethyl phosphonium phosphate Body; acrylamide, acrylonitrile, and the like. These monomerizable copolymerizable components may be used alone or in combination of two or more. The amount of the copolymerizable monomers used is preferably 40% by weight or less based on the total of the monomer components.
另外,為了進行交聯,上述丙烯酸系聚合物亦可根據需要含有多官能單體等作為共聚合用單體成分。該多官能單體可列舉為例如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯等。該等多官能單體亦可使用一種或兩種以上。從黏合特性等觀點考慮,多官能單體之使用量較好為全部單體成分的30重量%以下。 In addition, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization as needed. The polyfunctional monomer may, for example, be hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol. Di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, ring Oxygen (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less based on the total of the monomer components from the viewpoint of adhesion characteristics and the like.
前述丙烯酸系聚合物可藉由將單一單體或兩種以上單體之混合物聚合而得到。聚合可藉溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等任意一種方式進行。從防止對潔淨的被黏著體的污染等觀點而言,較好為低分子量物質之含量少者。從該觀點考慮,丙烯酸系聚合物之數平均分子量較好為30萬以上,更好為40萬~300萬左右。 The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can be carried out by any one of solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like. From the viewpoint of preventing contamination of a clean adherend, it is preferred that the content of the low molecular weight substance is small. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.
另外,為了提高基礎聚合物的丙烯酸系聚合物等之數平均分子量,前述黏著劑中亦可適當採用外部交聯劑。外部交聯方法之具體手段可列舉為添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂的交聯劑並使其反應之方法。在使用外部交聯劑之情況下,其使用量係根據與應交聯之基礎聚合物之平衡, 以及作為黏著劑之使用用途適當決定。一般而言,相對於前述基礎聚合物100重量份,較好調配5重量份以下,更好調配0.1~5重量份。另外,根據需要,在黏著劑中,除前述成分以外,尚可使用以往習知之各種黏著賦予劑、抗老化劑等添加劑。 Further, in order to increase the number average molecular weight of the acrylic polymer or the like of the base polymer, an external crosslinking agent may be suitably used in the above-mentioned adhesive. A specific means of the external crosslinking method is a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine crosslinking agent, and reacting them. In the case of using an external crosslinking agent, the amount used is based on the balance with the base polymer to be crosslinked. And it is appropriately determined as the use of the adhesive. In general, it is preferably formulated in an amount of 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the base polymer. Further, if necessary, in addition to the above-mentioned components, additives such as various conventional adhesion-imparting agents and anti-aging agents may be used in the adhesive.
黏著劑層2可由輻射線硬化型黏著劑形成。輻射線硬化型黏著劑係藉由照射紫外線等輻射線而增大交聯度,可容易地降低其黏著力。藉由輻射線照射使輻射線硬化型黏著劑層2硬化、藉此硬化而降低黏著力之黏著劑層2與晶片接合薄膜3之界面具有在拾取時容易剝離之性質。 The adhesive layer 2 can be formed of a radiation hardening type adhesive. The radiation-curable adhesive can increase the degree of crosslinking by irradiating radiation such as ultraviolet rays, and the adhesion can be easily lowered. The interface between the adhesive layer 2 and the wafer bonding film 3 which is cured by the radiation irradiation to harden the radiation-curable adhesive layer 2 and has a low adhesive force has a property of being easily peeled off at the time of pick-up.
輻射線硬化型黏著劑可無特別限制地使用具有碳-碳雙鍵等輻射線硬化性官能基,且顯示出黏著性者硬化。輻射線硬化型黏著劑可例示為例如在前述丙烯酸系黏著劑、橡膠系黏著劑等一般之感壓黏著劑中調配輻射線硬化性之單體成分或寡聚物成分之添加型輻射線硬化型黏著劑。 The radiation curable adhesive can be cured without any particular limitation by using a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness. The radiation-curable adhesive is exemplified by an addition type radiation-hardening type in which a radiation-curable monomer component or an oligomer component is blended in a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive. Adhesive.
調配之輻射線硬化性單體成分,可列舉為例如胺基甲酸酯寡聚物、胺基甲酸酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外輻射線硬化性寡聚物成分可列 舉為胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種寡聚物,其分子量較好在100~30000左右之範圍內。輻射線硬化性單體成分或寡聚物成分的調配量可根據前述黏著劑層之種類適當地決定可降低黏著劑層之黏著力之量。一般而言,相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份,為例如5重量份~500重量份,較好為40重量份~150重量份左右。 The radiation curable monomer component to be blended may, for example, be a urethane oligomer, a urethane (meth) acrylate, a trimethylolpropane tri(meth) acrylate, or a tetrahydroxy group. Methyl methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate , 1,4-butanediol di(meth)acrylate, and the like. In addition, the radiation curable oligomer component can be listed Examples of the various oligomers such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type have a molecular weight of preferably from about 100 to about 30,000. The amount of the radiation curable monomer component or the oligomer component can be appropriately determined depending on the kind of the above-mentioned adhesive layer to reduce the adhesion of the adhesive layer. In general, it is, for example, 5 parts by weight to 500 parts by weight, preferably about 40 parts by weight to 150 parts by weight, per 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.
另外,作為輻射線硬化型黏著劑,除前面說明之添加型輻射線硬化型黏著劑以外,亦列舉使用在聚合物側鏈或主鏈中或者主鏈末端具有碳-碳雙鍵者作為基礎聚合物的內在型輻射線硬化型黏著劑。內在型之輻射線硬化型黏著劑無需含有或者不大量含有低分子成分的寡聚物成分等,因此,寡聚物成分等不會隨時間推移在黏著劑中遷移,可形成穩定之層結構之黏著劑層故較佳。 Further, as the radiation-curable adhesive, in addition to the above-described added radiation-curable adhesive, a base polymerization having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal may be used. An intrinsic type of radiation hardening adhesive. The intrinsic radiation hardening type adhesive does not need to contain or contain a large amount of oligomer components of a low molecular component, and therefore, the oligomer component or the like does not migrate in the adhesive over time, and a stable layer structure can be formed. Adhesive layers are preferred.
前述具有碳-碳雙鍵之基礎聚合物可無特別限制地使用具有碳-碳雙鍵,且具有黏著性者。該基礎聚合物較好為以丙烯酸系聚合物作為基本骨架者。至於丙烯酸系聚合物之基本骨架可列舉為前述例示之丙烯酸系聚合物。 The aforementioned base polymer having a carbon-carbon double bond can be used without any particular limitation, and has a carbon-carbon double bond and has adhesiveness. The base polymer is preferably an acrylic polymer as a basic skeleton. The basic skeleton of the acrylic polymer can be exemplified by the above-exemplified acrylic polymer.
於前述丙烯酸系聚合物中導入碳-碳雙鍵之方法並無特別限制,可採用各種方法,但將碳-碳雙鍵導入於聚合物側鏈在分子設計上比較容易。列舉為例如預先將具有官能基之單體共聚合於丙烯酸系聚合物中後,使具有可與該官能基反應之官能基與碳-碳雙鍵之化合物在保持 碳-碳雙鍵之輻射線硬化性下進行縮合或加成反應之方法。 The method of introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. However, introduction of a carbon-carbon double bond into a polymer side chain is relatively easy in molecular design. For example, after copolymerizing a monomer having a functional group in an acrylic polymer in advance, a compound having a functional group reactive with the functional group and a carbon-carbon double bond is maintained. A method of performing condensation or addition reaction under radiation hardening of a carbon-carbon double bond.
該等官能基之組合例列舉為例如羧基與環氧基、羧基與氮丙啶基、羥基與異氰酸酯基等。該等官能基之組合中從反應追蹤之容易性考慮,較好為羥基與異氰酸酯基之組合。另外,若藉由該等官能基之組合而生成前述具有碳-碳雙鍵之丙烯酸系聚合物之組合,則官能基亦可在丙烯酸系聚合物與前述化合物之任一側上,上述之較佳組合中,較好丙烯酸系聚合物具有羥基、且前述化合物具有異氰酸酯基之情況。此時,具有碳-碳雙鍵之異氰酸酯化合物可列舉為例如甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基聯苯醯異氰酸酯等。另外,丙烯酸系聚合物可使用將前述例示之含羥基之單體或2-羥基乙基乙烯基醚、4-羥基丁基乙烯基醚、二乙二醇單乙烯基醚之醚系化合物等共聚合而成者。 Examples of combinations of such functional groups include a carboxyl group, an epoxy group, a carboxyl group and an aziridine group, a hydroxyl group and an isocyanate group. The combination of these functional groups is preferably a combination of a hydroxyl group and an isocyanate group from the viewpoint of easiness of reaction tracking. Further, when a combination of the above-mentioned functional groups is used to form the above-mentioned acrylic polymer having a carbon-carbon double bond, the functional group may be on either side of the acrylic polymer and the above compound, In the preferred combination, the acrylic polymer preferably has a hydroxyl group and the above compound has an isocyanate group. In this case, the isocyanate compound having a carbon-carbon double bond may, for example, be methacryl oxime isocyanate, 2-methacryloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbiphenyl hydrazine. Isocyanate, etc. Further, as the acrylic polymer, a hydroxyl group-containing monomer exemplified above, an ether compound of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether, or the like can be used. Aggregated.
上述內在型輻射線硬化型黏著劑可單獨使用上述具有碳-碳雙鍵的基礎聚合物(特別是丙烯酸類聚合物),亦可以不使特性惡化的程度調配上述輻射線硬化性單體成分或寡聚物成分。輻射線硬化性寡聚物成分等相對於基礎聚合物100重量份通常在30重量份的範圍內,優選為0~10重量份的範圍。 The above-mentioned intrinsic radiation-curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or may be formulated with the radiation curable monomer component or the degree of deterioration of properties. Oligomer component. The radiation curable oligomer component or the like is usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, per 100 parts by weight of the base polymer.
上述輻射線硬化型黏著劑中,在利用紫外線等硬化的情況下含有光聚合引發劑。作為光聚合引發劑,可以列舉例如:4-(2-羥基乙氧基)苯基(2-羥基-2-丙 基)酮、α-羥基-α,α’-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基甲酮等α-酮醇系化合物;甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉丙烷-1-酮等苯乙酮系化合物;苯偶因***、苯偶因異丙醚、茴香偶因甲醚等苯偶因醚系化合物;聯苯醯二甲基縮酮等縮酮系化合物;2-萘磺醯氯等芳香族磺醯氯系化合物;1-苯基-1,2-丙烷二酮-2-(O-乙氧基羰基)肟等光活性肟系化合物;二苯甲酮、苯甲醯苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物;噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物;樟腦醌;鹵代酮;醯基氧化膦;醯基膦酸酯等。光聚合引發劑的調配量相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份例如為0.05重量份~20重量份左右。 The radiation curable adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. As the photopolymerization initiator, for example, 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propane) Α-keto alcohol compound such as ketone, α-hydroxy-α,α′-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone or 1-hydroxycyclohexyl phenyl ketone; methoxy Acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)benzene Acetophenone-based compound such as 2-morpholinopropan-1-one; benzoin ether compound such as benzoin ether, benzoin isopropyl ether or fentanyl methyl ether; biphenyl fluorene dimethyl a ketal compound such as a ketal; an aromatic sulfonium chloride compound such as 2-naphthalenesulfonium chloride; or a photoactive activity such as 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)anthracene Lanthanide compounds; benzophenone compounds such as benzophenone, benzamidine benzoic acid, 3,3'-dimethyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxene Ketone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2 a thioxanthone compound such as 4-diisopropylthioxanthone; camphorquinone; a halogenated ketone; a fluorenylphosphine oxide; a decylphosphonate. The amount of the photopolymerization initiator to be added is, for example, about 0.05 parts by weight to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the pressure-sensitive adhesive.
另外,作為輻射線硬化型黏著劑,可列舉例如日本特開昭60-196956號公報中所揭示之含有具有2個以上不飽和鍵的加成聚合性化合物、具有環氧基的烷氧基矽烷等光聚合性化合物、與羰基化合物、有機硫化合物、過氧化物、胺、鎓鹽系化合物等光聚合引發劑之橡膠系黏著劑或丙烯酸系黏著劑等。 In addition, as the radiation-curable adhesive, an addition polymerizable compound having two or more unsaturated bonds and an alkoxydecane having an epoxy group disclosed in JP-A-60-196956, for example, may be mentioned. A photopolymerizable compound, a rubber-based adhesive such as a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine or a phosphonium salt compound, or an acrylic adhesive.
另外,在輻射線照射時因氧而引起硬化障礙的情況下,較好利用任意方法使輻射線硬化型黏著劑層2 的表面與氧(空氣)阻隔。可列舉例如:以分隔板將上述黏著劑層2表面覆蓋之方法或者在氮氣氛圍中進行紫外線等輻射線之照射的方法等。 Further, in the case where the curing is caused by oxygen at the time of radiation irradiation, it is preferred to use any method to make the radiation-curable adhesive layer 2 The surface is blocked with oxygen (air). For example, a method of covering the surface of the above-mentioned adhesive layer 2 with a partition plate or a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere may be mentioned.
黏著劑層2的厚度並無特別限制,但由同時實現防止晶片切割面的缺損及接著層之固定保持等觀點而言,較好為1μm~50μm左右。較好2μm~30μm,更好5μm~25μm。 The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 μm to 50 μm from the viewpoint of preventing the chip cut surface from being damaged and the adhesion of the adhesive layer. It is preferably 2 μm to 30 μm, more preferably 5 μm to 25 μm.
本實施形態之附帶分隔板之切割‧晶片接合薄膜10例如可藉如下方法製作。 The dicing sheet-bonding film 10 with a separator according to this embodiment can be produced, for example, by the following method.
首先,基材1可藉由過去公知之製膜方法製膜。作為該製膜方法,可例示例如:壓延製膜法、於有機溶劑中之流延法、於密閉系之吹塑擠出法、T形模頭擠出法、共擠出法、乾式層合法等。欲對基材1進行著色之情況下,添加上述色料。 First, the substrate 1 can be formed into a film by a conventional film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, a blow molding method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry layer method. Wait. In the case where the substrate 1 is to be colored, the above coloring material is added.
接著,在基材1上塗佈黏著劑組成物溶液形成塗膜,然後在特定條件下將該塗膜乾燥(根據需要進行加熱交聯)而形成黏著劑層2。作為塗佈方法並無特別限制,可列舉例如:輥塗、絲網塗佈、凹版塗佈等。且,作為乾燥條件,可在例如乾燥溫度80~150℃、乾燥時間0.5~5分鐘的範圍內進行。且,亦可在分隔板上塗佈黏著劑組成物形成塗膜後,在上述乾燥條件下將塗膜乾燥而形成黏著劑層2。然後,將黏著劑層2與分隔板一起貼合到基 材1上。由此,製作切割薄膜11。 Next, an adhesive composition solution is applied onto the substrate 1 to form a coating film, and then the coating film is dried under specific conditions (heat-crosslinking as needed) to form the adhesive layer 2. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be carried out, for example, at a drying temperature of 80 to 150 ° C and a drying time of 0.5 to 5 minutes. Further, the coating film may be formed by applying an adhesive composition to the separator, and then the coating film may be dried under the above drying conditions to form the adhesive layer 2. Then, the adhesive layer 2 is attached to the base together with the separator On the material 1. Thereby, the dicing film 11 is produced.
晶片接合薄膜3例如藉下述方法製作。 The wafer bonding film 3 is produced, for example, by the following method.
首先,製作晶片接合薄膜3之形成材料的接著劑組成物溶液。該接著劑組成物溶液中,如前所述,調配有上述接著劑組成物、填料、其他各種添加劑等。 First, a solution of an adhesive composition of a material for forming the wafer bonding film 3 is prepared. In the adhesive composition solution, as described above, the above-described adhesive composition, filler, various other additives, and the like are blended.
接著,將接著劑組成物溶液塗佈於基材上成為特定厚度,從而形成塗膜,然後將該塗膜在特定條件下乾燥,形成晶片接合薄膜前驅體。作為塗佈方法並無特別限制,可列舉例如:輥塗、絲網塗佈、凹版塗佈等。且,作為乾燥條件,可在例如乾燥溫度70~160℃、乾燥時間1~5分鐘的範圍內進行。另外,亦可在分隔板上塗佈接著劑組成物溶液形成塗膜後,在前述乾燥條件下將塗膜乾燥而形成晶片接合薄膜前驅體。然後,將晶片接合薄膜前驅體與分隔板一起貼合到基材分隔板上。 Next, the adhesive composition solution is applied onto the substrate to a specific thickness to form a coating film, and then the coating film is dried under specific conditions to form a wafer bonding film precursor. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. Further, the drying conditions can be carried out, for example, at a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes. Further, after the coating composition is applied onto the separator to form a coating film, the coating film is dried under the drying conditions to form a wafer bonding film precursor. Then, the wafer bonding film precursor is attached to the substrate separator together with the separator.
然後,將所得之晶片接合薄膜前驅體以成為特定的俯視形狀的方式進行模切或切割,製作具有伸出片之晶片接合薄膜3。 Then, the obtained wafer bonding film precursor is die-cut or cut in such a manner as to have a specific plan view shape, and a wafer bonding film 3 having a protruding sheet is produced.
接著,從切割薄膜11及晶片接合薄膜3上分別剝離分隔板,以晶片接合薄膜3與黏著劑層2成為貼合面之方式將兩者貼合。貼合例如可藉由壓著進行。此時,層合溫度並無特別限制,例如較好為30~50℃,更好為35~45℃。且,線壓亦未特別限制,例如較好為0.1~20kgf/cm,更好為1~10kgf/cm。 Next, the separator is peeled off from the dicing film 11 and the wafer bonding film 3, and the wafer bonding film 3 and the adhesive layer 2 are bonded to each other so that the bonding film 2 can be bonded to each other. The bonding can be performed, for example, by pressing. At this time, the lamination temperature is not particularly limited, and is, for example, preferably 30 to 50 ° C, more preferably 35 to 45 ° C. Further, the linear pressure is not particularly limited, and is, for example, preferably 0.1 to 20 kgf/cm, more preferably 1 to 10 kgf/cm.
最後,將晶片接合薄膜3上之基材分隔板剝 離,與分隔板貼合,得到本實施形態之附分隔板之切割‧晶片接合薄膜10。本實施形態中,使用長條狀分隔板14作為分隔板,將複數個切割‧晶片接合薄膜12以特定間隔貼合到分隔板14上。可將該長條狀附分隔板之薄膜10捲繞為捲筒狀而以捲繞體的形式使用。 Finally, the substrate separator on the wafer bonding film 3 is peeled off. The film was bonded to the separator to obtain a dicing die-bonding film 10 with a separator attached to the present embodiment. In the present embodiment, a plurality of slit ‧ wafer bonded films 12 are bonded to the partition plate 14 at a specific interval by using the long partition plate 14 as a partition plate. The film 10 of the long strip-shaped separator can be wound into a roll shape and used in the form of a wound body.
以下,參考圖1B、圖3及圖4以使用附分隔板之切割‧晶片接合薄膜10之情況為例進行說明。圖3係表示使用本實施形態之附分隔板之切割‧晶片接合薄膜的半導體裝置之製造步驟的一步驟之剖面示意圖,圖4係表示藉由圖1A所示之附分隔板之切割‧晶片接合薄膜中的晶片接合薄膜安裝半導體晶片之例的剖面示意圖。 Hereinafter, a case where the dicing die-bonding film 10 with a separator is used will be described with reference to FIGS. 1B, 3, and 4 as an example. Fig. 3 is a cross-sectional view showing a step of manufacturing a semiconductor device using the dicing die-bonding film of the present embodiment, and Fig. 4 is a view showing the cutting of the separator plate shown in Fig. 1A. A schematic cross-sectional view of an example of mounting a semiconductor wafer on a wafer bonding film in a wafer bonding film.
如圖1B所示,附分隔板之薄膜10沿捲出方向Y被連續地捲出。然後,藉由公知之晶片安裝裝置,將切割‧晶片接合薄膜12從長條狀分隔板14剝離,如圖3所示,將半導體晶圓4壓著於經剝離之切割‧晶片接合薄膜12上(貼附步驟)。剝離係從晶片接合薄膜3之形成有伸出片3a的一側進行。藉此,伸出片3a成為剝離起點,可將切割‧晶片接合薄膜12容易地剝離。另外,藉由沿長條狀分隔板14的長度方向X形成伸出片3a,可使剝離起點總是位於捲出方向Y的前端側,因此,可在長條狀分隔板14上的恒定位置開始進行捲出的切割‧晶片接合薄膜12的剝離,並且可抑制用於剝離的複雜作業。 As shown in Fig. 1B, the film 10 with the separator is continuously wound up in the unwinding direction Y. Then, the dicing die-bonding film 12 is peeled off from the elongated separator 14 by a known wafer mounting device, and as shown in FIG. 3, the semiconductor wafer 4 is pressed against the diced ‧ wafer bonding film 12 On (attachment step). The peeling is performed from the side of the wafer bonding film 3 on which the projecting piece 3a is formed. Thereby, the projecting piece 3a serves as a peeling starting point, and the dicing/wiring film 12 can be easily peeled off. Further, by forming the projecting piece 3a along the longitudinal direction X of the elongated partitioning plate 14, the peeling starting point can always be located on the front end side of the unwinding direction Y, and therefore, can be on the elongated partitioning plate 14. The cutting at the constant position starts the dicing of the unwinding ‧ the wafer bonding film 12 is detached, and the complicated work for peeling can be suppressed.
貼附步驟係藉由壓接輥等按壓手段之按壓的同時進行。安裝時的貼附溫度並無特別限制,例如較好在20~80℃的範圍內。 The attaching step is performed simultaneously by pressing by a pressing means such as a pressure roller. The attachment temperature at the time of mounting is not particularly limited, and for example, it is preferably in the range of 20 to 80 °C.
其次,進行半導體晶圓4之切割。藉此,將半導體晶圓4切割為特定的尺寸而單片化,製造半導體晶片5(參考圖4)。切割例如從半導體晶圓4之電路面側根據常法進行。另外,本步驟中,例如可採用切入到晶片接合薄膜3之稱為全切的切割方式等。作為本步驟中使用之切割裝置並無特別限制,可使用過去公知的切割裝置。另外,半導體晶圓4由切割‧晶片接合薄膜12予以接著固定,因此可抑制晶片缺損或晶片飛散且亦可抑制半導體晶圓4之破損。 Next, the dicing of the semiconductor wafer 4 is performed. Thereby, the semiconductor wafer 4 is diced into a specific size and singulated, and the semiconductor wafer 5 is manufactured (refer FIG. 4). The dicing is performed, for example, from the circuit surface side of the semiconductor wafer 4 according to a conventional method. Further, in this step, for example, a cutting method called full cutting which is cut into the wafer bonding film 3 or the like can be employed. The cutting device used in this step is not particularly limited, and a conventionally known cutting device can be used. Further, since the semiconductor wafer 4 is subsequently fixed by the dicing ‧ the wafer bonding film 12, wafer defects or wafer scattering can be suppressed and damage of the semiconductor wafer 4 can be suppressed.
為了將由切割‧晶片接合薄膜12接著固定之半導體晶片5剝離,而進行半導體晶片5之拾取。作為拾取方法並未特別限制,可採用過去公知的各種方法。例如可列舉:用針將各個半導體晶片5從切割薄膜11側頂起並利用拾取裝置拾取被頂起的半導體晶片5之方法等。 In order to peel off the semiconductor wafer 5 which is subsequently fixed by the dicing ‧ wafer bonding film 12, the semiconductor wafer 5 is picked up. The picking method is not particularly limited, and various methods known in the art can be employed. For example, a method in which each semiconductor wafer 5 is lifted up from the side of the dicing film 11 by a needle and the semiconductor wafer 5 that is lifted up is picked up by a pick-up device can be cited.
此處,黏著劑層2為紫外線硬化型之情況下,拾取係在對該黏著劑層2照射紫外線後進行。由此,黏著劑層2對晶片接合薄膜3之黏著力下降,使半導體晶片5之剝離變得容易。結果,可以在不損傷半導體晶片5的情況下進行拾取。紫外線照射時的照射強度、照射時間等條件並未特別限制,根據需要適當設定即可。另外,作為紫外線照射中使用的光源,可使用高壓水銀燈、微波激 發型燈、化學燈等。 Here, in the case where the adhesive layer 2 is of an ultraviolet curing type, the pickup is performed after the adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force of the adhesive layer 2 to the wafer bonding film 3 is lowered, and the peeling of the semiconductor wafer 5 is facilitated. As a result, pickup can be performed without damaging the semiconductor wafer 5. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as necessary. In addition, as a light source used in ultraviolet irradiation, a high pressure mercury lamp or a microwave can be used. Hair light, chemical light, etc.
所拾取的半導體晶片5透過晶片接合薄膜3接著固定於被黏著體6上(晶片接合)。作為被黏著體6,可列舉引線框、TAB薄膜、基板或者另行製作的半導體晶片等。被黏著體6例如可為容易變形的變形型被黏著體,亦可為不易變形之非變形型被黏著體(半導體晶圓等)。 The picked semiconductor wafer 5 is then fixed to the adherend 6 through the wafer bonding film 3 (wafer bonding). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, or a separately fabricated semiconductor wafer. The adherend 6 may be, for example, a deformed adherend that is easily deformed, or a non-deformable adherend (semiconductor wafer or the like) that is not easily deformed.
作為上述基板,可使用過去公知之基板。另外,作為上述引線框,可使用Cu引線框、42合金引線框等之金屬引線框或由玻璃環氧樹脂、BT(雙馬來醯亞胺-三嗪)、聚醯亞胺等所成之有機基板。但是,本發明不限於此,亦包含可以安裝半導體元件、與半導體元件電連接後使用之電路基板。 As the substrate, a conventionally known substrate can be used. Further, as the lead frame, a metal lead frame such as a Cu lead frame or a 42 alloy lead frame or a glass epoxy resin, BT (bismaleimide-triazine) or polyimine may be used. Organic substrate. However, the present invention is not limited thereto, and includes a circuit board that can be mounted with a semiconductor element and electrically connected to the semiconductor element.
在晶片接合薄膜3為熱硬化型之情況下,藉由加熱硬化,將半導體晶片5接著固定在被黏著體6上,而提高耐熱強度。加熱溫度可在80~200℃、較好100~175℃、更好100~140℃進行。另外,可以加熱時間為0.1~24小時、較好0.1~3小時、更好0.2~1小時進行。另外,透過晶片接合薄膜3將半導體晶片5接著固定於基板等上所成者可供於回流焊步驟。 In the case where the wafer bonding film 3 is of a thermosetting type, the semiconductor wafer 5 is subsequently fixed to the adherend 6 by heat hardening, thereby improving heat resistance. The heating temperature can be carried out at 80 to 200 ° C, preferably 100 to 175 ° C, more preferably 100 to 140 ° C. Further, the heating time may be 0.1 to 24 hours, preferably 0.1 to 3 hours, more preferably 0.2 to 1 hour. Further, the semiconductor wafer 5 is subsequently fixed to the substrate or the like through the wafer bonding film 3, and the reflow soldering step is available.
熱硬化後之晶片接合薄膜3之剪切接著力對被黏著體6較好為0.2MPa以上,更好為0.2~10MPa。如果晶片接合薄膜3之剪切接著力至少為0.2MPa以上,則在金屬線接合(wire bonding)步驟時不會因該步驟中之 超音波振動或加熱而在晶片接合薄膜3與半導體晶片5或被黏著體6之接著面處產生剪切變形。即,半導體元件不會因金屬線接合時的超音波振動而移動,由此,可以防止金屬線接合的成功率下降。 The shearing force of the wafer bonding film 3 after heat curing is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa, to the adherend 6 . If the shear bonding force of the wafer bonding film 3 is at least 0.2 MPa or more, it is not caused by the step in the wire bonding step. Ultrasonic vibration or heating causes shear deformation at the bonding surface of the wafer bonding film 3 and the semiconductor wafer 5 or the adherend 6. In other words, the semiconductor element does not move due to ultrasonic vibration during wire bonding, and thus the success rate of wire bonding can be prevented from decreasing.
另外,本實施形態之半導體裝置的製造方法中,可不經過晶片接合薄膜3之利用加熱處理的熱硬化步驟而進行金屬線接合,再用密封樹脂將半導體晶片5密封,並對該密封樹脂進行後硬化。此時,晶片接合薄膜3暫時固著時之剪切接著力對被黏著體6較好為0.2MPa以上,更好為0.2~10MPa。如果晶片接合薄膜3暫時固著時的剪切接著力至少為0.2MPa以上,則即使在不經過加熱步驟進行金屬線接合步驟,亦不會因該步驟中的超音波振動或加熱而在晶片接合薄膜3與半導體晶片5或被黏著體6之接著面處產生剪切變形。即,半導體元件不會因金屬線接合時之超音波振動而移動,由此,可防止金屬線接合之成功率下降。 Further, in the method of manufacturing a semiconductor device of the present embodiment, the wire bonding can be performed without performing the heat curing step of the wafer bonding film 3 by heat treatment, and the semiconductor wafer 5 can be sealed with a sealing resin, and the sealing resin can be sealed. hardening. At this time, the shearing force at the time of temporarily fixing the wafer bonding film 3 to the adherend 6 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa. If the shearing force at the time of temporarily fixing the wafer bonding film 3 is at least 0.2 MPa or more, the wafer bonding is not performed by ultrasonic vibration or heating in this step even if the wire bonding step is not performed in the heating step. Shear deformation occurs between the film 3 and the semiconductor wafer 5 or the adhesion surface of the adherend 6. In other words, the semiconductor element does not move due to ultrasonic vibration when the metal wires are joined, whereby the success rate of the metal wire bonding can be prevented from decreasing.
上述金屬線接合係利用接合金屬線7將被黏著體6之端子部(內部引線)的前端與半導體晶片5上的電極焊盤(未圖示)電連接之步驟。作為上述接合金屬線7,可使用例如:金線、鋁線或銅線等。進行金屬線接合時的溫度係在80~250℃、較好80~220℃的範圍內進行。另外,其加熱時間係進行數秒~數分鐘。連接線係藉由在加熱成達到上述溫度範圍內的狀態下組合使用超音波的振動能與施加加壓產生的壓接能而進行。本步驟亦可不 進行晶片接合薄膜3的熱硬化而進行。 The metal wire bonding is a step of electrically connecting the tip end of the terminal portion (internal lead) of the adherend 6 to an electrode pad (not shown) on the semiconductor wafer 5 by the bonding metal wire 7. As the bonding metal wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is carried out in the range of 80 to 250 ° C, preferably 80 to 220 ° C. In addition, the heating time is performed for several seconds to several minutes. The connection line is performed by combining the vibration energy of the ultrasonic wave and the pressure contact energy generated by the application of pressure in a state where the temperature is within the above temperature range. This step is also not The wafer bonding film 3 is thermally cured.
上述密封步驟係利用密封樹脂8將半導體晶片5密封之步驟。本步驟係為了保護搭載在被黏著體6上之半導體晶片5或接合金屬線7而進行。本步驟係藉由以模具將密封用的樹脂成型而進行。作為密封樹脂8係使用例如用環氧系樹脂。對於樹脂密封時之加熱溫度,通常在175℃下進行60~90秒鐘,但本發明不限於此,例如,亦可在165~185℃硬化數分鐘。藉此,在使密封樹脂硬化的同時透過晶片接合薄膜3將半導體晶片5與被黏著體6固著。即,本發明中,在不進行後述之後硬化步驟的情況,本步驟中亦可藉由晶片接合薄膜3進行固著,從而可有助於減少製造步驟數及縮短半導體裝置之製造時間。 The sealing step described above is a step of sealing the semiconductor wafer 5 with a sealing resin 8. This step is performed to protect the semiconductor wafer 5 or the bonding metal wires 7 mounted on the adherend 6. This step is carried out by molding a resin for sealing with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually carried out at 175 ° C for 60 to 90 seconds, but the present invention is not limited thereto, and for example, it may be hardened at 165 to 185 ° C for several minutes. Thereby, the semiconductor wafer 5 and the adherend 6 are fixed by the wafer bonding film 3 while the sealing resin is cured. That is, in the present invention, in the case where the post-hardening step described later is not performed, the wafer bonding film 3 can be fixed in this step, which contributes to a reduction in the number of manufacturing steps and a reduction in the manufacturing time of the semiconductor device.
上述後硬化步驟中,使在前述密封步驟中硬化不足之密封樹脂8完全硬化。即使在密封步驟中晶片接合薄膜3未完全熱硬化之情況下,在本步驟中晶片接合薄膜3亦可與密封樹脂8一起完全熱硬化。本步驟中之加熱溫度雖隨密封樹脂的種類而異,但可在例如165~185℃的範圍內,加熱時間為約0.5小時~約8小時。 In the post-hardening step, the sealing resin 8 which is insufficiently hardened in the sealing step is completely cured. Even in the case where the wafer bonding film 3 is not completely thermally hardened in the sealing step, the wafer bonding film 3 can be completely thermally hardened together with the sealing resin 8 in this step. The heating temperature in this step varies depending on the type of the sealing resin, but may be, for example, in the range of 165 to 185 ° C, and the heating time is from about 0.5 hours to about 8 hours.
第一實施形態之晶片接合薄膜具有從外周向外側伸出的伸出片。第二實施形態之晶片接合薄膜具有形成為錐形的伸出部作為晶片接合薄膜的基部之一個區域,在其前端部連接有第一實施形態中已說明之伸出片。以下,對該方 式進行說明。 The die bond film of the first embodiment has a projecting piece that protrudes outward from the outer periphery. The wafer bonding film of the second embodiment has a tapered portion formed as a region of the base portion of the wafer bonding film, and a protruding sheet described in the first embodiment is connected to the front end portion thereof. Below, the party The formula is explained.
如圖5A所示,本實施形態之附分隔板之薄膜中,晶片接合薄膜23中,在俯視時的晶片接合薄膜23的外周的一部分形成有以夾著該外周上的上述伸出片3a的兩個伸出起點Ea、Ea的該外周上的兩個點作為伸出起點EA、EA並且以伸出片3a的兩個伸出起點Ea、Ea作為伸出前端點的錐形伸出部3A。分別將伸出片3a的兩個伸出起點Ea、Ea與伸出部3A的兩個伸出起點EA、EA連接的兩條線段LA、LA位於通過伸出片3a的兩個伸出起點Ea、Ea的任意一點以及伸出部3A的兩個伸出起點EA、EA之此三個點的圓弧CA、CA的內側。因此,晶片接合薄膜23具有相對較大的錐狀伸出部3A及與該伸出部3A的前端部分連結的相對較小的伸出片3a。藉此,在從分隔板剝離切割‧晶片接合薄膜時,即使不進行伸出片3a的剝離,在剝離越過伸出片3a的根部(或者伸出起點Ea、Ea)時,亦可在藉由形成為錐狀而降低了來自分隔板的牽拉應力的伸出部3A引起剝離,可儘可能地抑制非預料之剝離的不良狀況的產生。 As shown in FIG. 5A, in the film with a separator according to the present embodiment, in the wafer bonding film 23, a part of the outer periphery of the wafer bonding film 23 in a plan view is formed so as to sandwich the above-mentioned projecting piece 3a on the outer periphery. Two points on the outer circumference of the two extending starting points E a , E a as the extending starting points E A , E A and the two extending starting points E a , E a of the protruding piece 3 a as the extended front end point Conical extension 3A. Two line segments L A , L A connecting the two extending starting points E a , E a of the projecting piece 3 a and the two extending starting points E A , E A of the protruding portion 3A are respectively located through the protruding piece 3a Two points extending from the starting points E a , E a and the inner sides of the arcs C A , C A of the three points of the protruding portion 3A extending from the starting points E A , E A . Therefore, the wafer bonding film 23 has a relatively large tapered projecting portion 3A and a relatively small projecting piece 3a joined to the front end portion of the projecting portion 3A. Whereby when, during the cutting peeled from the partition plate ‧ wafer bonding film, even without extending the release sheet 3a, projecting beyond the root 3a in the release sheet (or extended starting E a, E a), may The protrusion 3A which is reduced in the tensile stress from the partition plate by being formed into a tapered shape causes peeling, and it is possible to suppress the occurrence of a problem of unintended peeling as much as possible.
使連結伸出部3A的兩個伸出起點EA、EA與伸出前端點(即,伸出片的伸出起點Ea、Ea)的兩條線段LA、LA只要位於上述圓弧CA、CA的內側(晶片接合薄膜的重心側),則其可為直線、曲線或其組合之任意一者。兩條線段LA、LA為曲線時,只要位於圓弧CA、CA的內側,則可係相對於晶片接合薄膜的重心向外側凸出的曲 線,亦可係相對於晶片接合薄膜的重心向內側凸出的曲線。其中,較好兩條線段LA、LA為直線。藉此,可容易地形成伸出部3A,並且可有效地降低來自分隔板之牽拉應力。 The connecting portions 3A of the two projecting extended starting point E A, E A and the projecting distal end point (i.e., projecting pieces projecting starting point E a, E a) of the two line segments L A, L A is located just above The inner side of the circular arcs C A and C A (the center of gravity of the wafer bonding film) may be any one of a straight line, a curved line, or a combination thereof. When the two line segments L A and L A are curved, as long as they are located inside the circular arcs C A and C A , they may be curved outwardly with respect to the center of gravity of the die bond film, or may be associated with the wafer bonding film. A curve in which the center of gravity protrudes toward the inside. Among them, it is preferable that two line segments L A and L A are straight lines. Thereby, the projecting portion 3A can be easily formed, and the pulling stress from the partitioning plate can be effectively reduced.
兩條線段LA、LA為直線時,其所成的角度β較好為120°以上且175°以下,更好為130°以上且160°以下。藉由將伸出部3A的前端部之內角β設定為上述範圍,可有效地降低來自分隔板的牽拉應力,並且可以充分地確保晶片接合薄膜23中用於貼附半導體晶圓4(參考圖3)的有效面積。 When the two line segments L A and L A are straight lines, the angle β formed is preferably 120° or more and 175° or less, more preferably 130° or more and 160° or less. By setting the inner angle β of the front end portion of the overhang portion 3A to the above range, the pulling stress from the partition plate can be effectively reduced, and the semiconductor wafer 4 for attaching the semiconductor wafer 4 can be sufficiently ensured. (Refer to Figure 3) The effective area.
如圖5B所示,基於與第一實施形態同樣之理由,伸出片3a及伸出部3A較好沿長條狀分隔板14之長度方向X配置。特別地,如圖5B所示,較好在沿長條狀分隔板14的長度方向X的晶片接合薄膜23的兩端部設置有伸出片3a、3a’及伸出部3A、3A’。 As shown in FIG. 5B, the projecting piece 3a and the projecting portion 3A are preferably arranged along the longitudinal direction X of the elongated partitioning plate 14 for the same reason as in the first embodiment. Specifically, as shown in FIG. 5B, it is preferable that the extending portions 3a, 3a' and the protruding portions 3A, 3A' are provided at both end portions of the wafer bonding film 23 along the longitudinal direction X of the elongated partitioning plate 14. .
本發明之其他實施形態之伸出片的變形例如圖6A至圖6M所示。藉由使晶片接合薄膜具有圖6A至圖6M所示的伸出片33a~33m,可容易地進行切割‧晶片接合薄膜從分隔板之剝離。第一實施形態中的伸出片之結構特徵對於伸出片33a~33m亦可同樣地適用。 The deformation of the projecting piece according to another embodiment of the present invention is shown, for example, in Figs. 6A to 6M. By having the wafer bonding film having the projecting sheets 33a to 33m shown in Figs. 6A to 6M, the dicing of the wafer bonding film from the separator can be easily performed. The structural features of the projecting piece in the first embodiment can be similarly applied to the projecting pieces 33a to 33m.
以下,例示性地詳細說明本發明之較佳實施例。但是,若未特別限制性地記載,則該實施例中記載的材料或調配量等無意將本發明的要旨限定於此。另外,下文中,出現的“份”係指重量份。 Hereinafter, preferred embodiments of the present invention will be exemplarily described in detail. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the invention, unless otherwise specified. In addition, hereinafter, "parts" means parts by weight.
使下述(a)~(d)溶解或分散於甲基乙基酮中,得到濃度25重量%之接著劑組成物溶液。且,下述(a)~(d)的份數係指固體成分的份數。 The following (a) to (d) were dissolved or dispersed in methyl ethyl ketone to obtain a binder composition solution having a concentration of 25% by weight. Further, the parts (a) to (d) below refer to the number of parts of the solid component.
(a)環氧樹脂(日本化藥(股)製,EPPN-501HY)11份 (a) 11 parts of epoxy resin (Nippon Chemical Co., Ltd., EPPN-501HY)
(b)酚樹脂(明和化成(股)製,MEH7851M)14份 (b) phenol resin (Minghe Chemical Co., Ltd., MEH7851M) 14 parts
(c)丙烯酸系橡膠(NAGASE CHEMTEX製,SG-P3)100份 (c) 100 parts of acrylic rubber (made by NAGASE CHEMTEX, SG-P3)
(d)球形二氧化硅(ADMATECHS製,SO-E2)67份 (d) spherical silica (manufactured by ADMATECHS, SO-E2) 67 parts
將該接著劑組成物溶液塗佈於由經聚矽氧烷脫模處理之厚度50μm的聚對苯二甲酸乙二酯薄膜所成的脫模處理薄膜(分隔板)上之後,在130℃乾燥2分鐘。藉此,製作厚度25μm之晶片接合薄膜前驅體。 The solution of the adhesive composition was applied to a release-treated film (separator) made of a polyethylene terephthalate film having a thickness of 50 μm which was subjected to mold release treatment with polysiloxane, at 130 ° C. Dry for 2 minutes. Thereby, a wafer bonded film precursor having a thickness of 25 μm was produced.
將所製作之晶片接合薄膜前驅體進行沖壓使得基部成為直徑330mm的圓形並且具有圖2所示形狀的 伸出片,製作整體上具有圖1B的俯視形狀的本實施例之晶片接合薄膜。伸出片之形狀細節如表1所示。 The fabricated wafer bonding film precursor was punched so that the base became a circular shape having a diameter of 330 mm and had the shape shown in FIG. The wafer was stretched to produce a wafer bonding film of the present embodiment having the planar shape as shown in Fig. 1B as a whole. The shape details of the protruding piece are shown in Table 1.
接著,將具有伸出片之晶片接合薄膜轉印到切割薄膜(日東電工公司製造,商品名“DU-2187G”)上。轉印以使切割薄膜的黏著劑層與晶片接合薄膜相對的方式進行。將該層合體沖壓為圓形使得切割薄膜的直徑為370mm,由此得到本實施例之附分隔板之切割‧晶片接合薄膜。 Next, the wafer bonding film having the protruding sheet was transferred onto a dicing film (manufactured by Nitto Denko Corporation, trade name "DU-2187G"). The transfer is performed in such a manner that the adhesive layer of the dicing film is opposed to the wafer bonding film. The laminate was punched into a circular shape so that the diameter of the dicing film was 370 mm, whereby the ‧ wafer-bonding film with the separator of the present embodiment was obtained.
將與實施例1同樣製作之晶片接合薄膜前驅體進行沖壓,使得基部成為直徑330mm的圓形並且具有圖5A所示形狀的伸出片及伸出部,製作整體上具有圖5B的俯視形狀的晶片接合薄膜,除此以外,與實施例1同樣製作附分隔板之切割‧晶片接合薄膜。另外,伸出片的形狀與實施例1同樣。伸出片的形狀細節如表1所示。 The wafer bonding film precursor produced in the same manner as in Example 1 was punched so that the base portion became a circular shape having a diameter of 330 mm and had a projecting piece and a projecting portion having the shape shown in Fig. 5A, and the entire shape having the plan view shape of Fig. 5B was produced. A dicing/wafer bonding film with a separator was produced in the same manner as in Example 1 except that the wafer bonding film was used. Further, the shape of the projecting piece is the same as that of the first embodiment. The shape details of the protruding piece are shown in Table 1.
將伸出片的形狀設定為圖6M所示之形狀,除此以外,與實施例1同樣地製作附分隔板之切割‧晶片接合薄膜。伸出片的形狀細節如表1所示。 A dicing die-bonding film with a separator was produced in the same manner as in Example 1 except that the shape of the projecting piece was set to the shape shown in Fig. 6M. The shape details of the protruding piece are shown in Table 1.
將伸出片之形狀設定為圖6C所示之形狀,除此以外,與實施例1同樣地製作附分隔板之切割‧晶片接合薄膜。伸出片的形狀細節如表1所示。 A dicing die-bonding film with a separator was produced in the same manner as in Example 1 except that the shape of the projecting piece was set to the shape shown in Fig. 6C. The shape details of the protruding piece are shown in Table 1.
在晶片接合薄膜上不設置伸出片,將俯視形狀設定為直徑330mm的圓形,除此以外,與實施例1同樣地製作附分隔板之切割‧晶片接合薄膜。伸出片的形狀細節如表1所示。 A dicing die-bonding film with a separator was produced in the same manner as in Example 1 except that the projecting sheet was not provided with a projecting sheet and a circular shape having a diameter of 330 mm. The shape details of the protruding piece are shown in Table 1.
使用晶片安裝機(日東精機公司製造,商品名“MA3000II”),將分隔板從實施例及比較例之附分隔板之切割‧晶片接合薄膜剝離。另外,實施例1~4中,從設置有伸出片的一側進行剝離。從切割薄膜剝離晶片接合薄膜時(晶片接合薄膜殘留在分隔板上時),將切割薄膜的被剝離部分到達晶片接合薄膜上預定貼附12吋晶圓之區域者評價為不良,並且將樣品數設為50,求出不良率{(不良數/全部樣品數)×100(%)}。結果如表1所示。 Using a wafer mounter (manufactured by Nitto Seiki Co., Ltd., trade name "MA3000II"), the separator was peeled off from the ‧ wafer bonded film of the separator sheets of the examples and the comparative examples. Further, in Examples 1 to 4, peeling was performed from the side where the protruding sheet was provided. When the wafer-bonding film is peeled off from the dicing film (when the wafer-bonding film remains on the separator), the peeled portion of the dicing film reaches the region on the wafer-bonding film to which the 12-inch wafer is to be attached, and the sample is evaluated as defective, and the sample is sampled. The number was set to 50, and the defect rate {(number of defectives / total number of samples) × 100 (%)} was determined. The results are shown in Table 1.
由表1之結果可知,藉由在晶片接合薄膜的外周部設置向外側凸出的伸出片,可容易地進行切割‧晶片接合薄膜從分隔板之剝離。 As is apparent from the results of Table 1, it is possible to easily perform the dicing of the dicing of the wafer bonding film from the separator by providing the projecting sheet which protrudes outward in the outer peripheral portion of the wafer bonding film.
3‧‧‧晶片接合薄膜 3‧‧‧ wafer bonding film
3a‧‧‧伸出片 3a‧‧‧Exhibition
14‧‧‧分隔板 14‧‧‧ partition board
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