TW201323102A - Method for cleaning vapor deposition mask for manufacture of organic EL devices and cleaning solution composition for organic EL mask - Google Patents

Abstract

The application discloses a method for cleaning an organic EL mask. The method comprises the following steps: (A) supplying a tetrahydrofuran (THF) solution to a clean chamber; (B) soaking an organic EL mask in the THF solution; (C) applying ultrasonic sound to clean the organic EL mask soaked in the THF solution; and (D) rinsing the cleaned organic EL mask with deionized water. The application also discloses a cleaning solution for organic EL mask. The cleaning solution contains tetrahydrofuran and isopropanol.

Description

清洗製造有機EL裝置的氣相沉積掩模的方法及清洗液 Method for cleaning vapor deposition mask for manufacturing organic EL device and cleaning solution

本發明示例性的實施方式涉及清洗方法，且更具體地說，涉及用於去除在製造有機EL裝置的氣相沉積過程中附著在掩模的有機EL材料，以及涉及用於有機EL掩模的清洗液組合物。 Exemplary embodiments of the present invention relate to a cleaning method, and more particularly, to an organic EL material for removing a mask attached during vapor deposition of an organic EL device, and to an organic EL mask. Cleaning solution composition.

作為顯示裝置的平面顯示器備受關注，包括液晶顯示裝置和具有有機電致發光(EL)裝置的顯示裝置。液晶顯示裝置具有較低的能耗，但是需要外部光單元(背光單元)來得到明亮的圖像，然而具有有機EL裝置的顯示裝置與液晶顯示裝置不同，其並不需要背光單元，這是因為有機EL裝置是自發光，所以可降低能耗。此外，具有有機EL裝置的顯示裝置具有高亮度和寬視角的特點。根據有機材料的類型，有機EL裝置可分為低分子型有機EL裝置和高分子型有機EL裝置。通過不同的方法可生產這些有機EL裝置。就低分子型有機EL裝置來說，通過氣相沉積過程形成薄膜，而對於高分子型有機EL裝置，在溶液中溶解後通過旋塗方法或噴墨方法形成薄膜。 A flat panel display as a display device has been attracting attention, including a liquid crystal display device and a display device having an organic electroluminescence (EL) device. The liquid crystal display device has low power consumption, but requires an external light unit (backlight unit) to obtain a bright image, whereas a display device having an organic EL device does not require a backlight unit, unlike a liquid crystal display device, because The organic EL device is self-illuminating, so energy consumption can be reduced. Further, a display device having an organic EL device has characteristics of high brightness and wide viewing angle. The organic EL device can be classified into a low molecular type organic EL device and a polymer type organic EL device depending on the type of the organic material. These organic EL devices can be produced by different methods. In the case of a low molecular type organic EL device, a film is formed by a vapor deposition process, and for a polymer type organic EL device, a film is formed by a spin coating method or an inkjet method after being dissolved in a solution.

就低分子型有機EL裝置來說，例如利用掩模通過真空氣相沉積依次在玻璃基板上形成正極、電洞注入層、電洞傳輸層、發光層、電子傳輸層以及負極而形成層狀結構。 In the low molecular type organic EL device, for example, a positive electrode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a negative electrode are sequentially formed on a glass substrate by vacuum vapor deposition using a mask to form a layered structure. .

利用放置在基板附近的掩模通過真空氣相沉積形成正極、電洞注入層、電洞傳輸層、發光層、電子傳輸層以及負極。然而，由 於用於微細圖案尤其是RGB層的氣相沉積掩模需要高度精確，故其難以製造且非常昂貴。此外，當掩模在形成低分子型有機EL裝置的有機層圖案的過程中用於多次氣相沉積時，有機材料沉積且附著在掩模上，使得高精確的掩模圖案不能轉移至基板。因此，為了實現高度精確的掩模圖案，一個昂貴的掩模在多次使用後將會作為廢物處理，這就增加了生產成本且難以大規模生產。在有機EL領域，目前並未嘗試通過重複利用掩模來節約成本。 The positive electrode, the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the negative electrode were formed by vacuum vapor deposition using a mask placed in the vicinity of the substrate. However, by Vapor deposition masks for fine patterns, especially RGB layers, require high precision, which is difficult to manufacture and very expensive. Further, when the mask is used for multiple vapor deposition in the process of forming the organic layer pattern of the low molecular type organic EL device, the organic material is deposited and attached to the mask, so that the highly accurate mask pattern cannot be transferred to the substrate. . Therefore, in order to achieve a highly accurate mask pattern, an expensive mask will be disposed of as waste after repeated use, which increases production costs and is difficult to mass-produce. In the field of organic EL, there is currently no attempt to save costs by recycling masks.

為了試圖解決該問題，韓國專利公開10-2005-0054452公開了一種用於清洗掩模的溶液和方法，其中該掩模在真空氣相沉積中用於生產低分子型有機EL裝置。然而，問題在於，在去除有機EL材料隨後的漂洗過程是複雜的且需要額外的漂洗液。此外，韓國專利公開10-2004-0072279公開了一種用於清洗有機EL(electroluminescence)掩模的裝置，但問題在於，用於蒸發和液化溶劑的裝置非常複雜且清洗過程耗時。另外，韓國專利公開10-2007-0065646公開了包括極性質子溶劑異丙醇的清洗液的用途，然而此清洗液溶解沉積材料的能力不足，不能達到完全清洗。 In order to solve this problem, Korean Patent Publication No. 10-2005-0054452 discloses a solution and method for cleaning a mask which is used in vacuum vapor deposition for producing a low molecular type organic EL device. However, the problem is that the subsequent rinsing process of removing the organic EL material is complicated and requires an additional rinsing liquid. Further, Korean Patent Publication No. 10-2004-0072279 discloses an apparatus for cleaning an organic EL (electroluminescence) mask, but the problem is that the apparatus for evaporating and liquefying the solvent is very complicated and the cleaning process is time consuming. In addition, Korean Patent Publication No. 10-2007-0065646 discloses the use of a cleaning liquid comprising a polar protic solvent isopropanol, however, the cleaning liquid has insufficient ability to dissolve the deposited material and cannot achieve complete cleaning.

因此，本發明是針對現有技術中存在的問題而完成。 Accordingly, the present invention has been made in view of the problems existing in the prior art.

本發明的實施方式提供了一種用於清洗有機EL掩模的方法，其具有優良的溶解有機EL材料的性能且能夠簡化被簡化的漂洗過程，以使得掩模乾燥過程容易且簡單。 Embodiments of the present invention provide a method for cleaning an organic EL mask which has excellent properties of dissolving an organic EL material and can simplify a simplified rinsing process to make the mask drying process easy and simple.

本發明的另一實施方式提供了一種清洗液以及利用該清洗液清洗掩模的方法，該清洗液具有優良的能力來溶解沉積材料，具有優良的乾燥性能且不需要除去離子水外的單獨的漂洗液。 Another embodiment of the present invention provides a cleaning liquid and a method of cleaning a mask using the cleaning liquid, the cleaning liquid having excellent ability to dissolve a deposition material, having excellent drying performance and requiring no separate removal of ionized water Rinsing solution.

根據本發明的實施方式，用於清洗有機EL掩模的方法包括如下步驟：(A)在潔淨的腔室內提供四氫呋喃(THF)溶液；(B)將有機EL掩模浸泡在THF溶液中；(C)超聲清洗浸泡在THF溶液中的有機EL掩模；以及(D)用去離子水漂洗清洗後的有機EL 掩模。 According to an embodiment of the present invention, a method for cleaning an organic EL mask includes the steps of: (A) providing a tetrahydrofuran (THF) solution in a clean chamber; (B) immersing the organic EL mask in a THF solution; C) ultrasonic cleaning of the organic EL mask soaked in the THF solution; and (D) rinsing the washed organic EL with deionized water Mask.

根據本發明的另一實施方式，用於有機EL掩模的清洗液包括四氫呋喃和異丙醇。 According to another embodiment of the present invention, the cleaning liquid for the organic EL mask includes tetrahydrofuran and isopropanol.

如上所述，本發明用於清洗有機EL掩模的方法具有溶解有機EL材料的優良性能，且能夠簡化漂洗過程，使得掩板的乾燥過程容易且簡單。此外，根據本發明的清洗液具有優良的溶解沉積材料的性能且包括沸點低於水的溶劑。因此，清洗液具有優良的乾燥性能且不需要除去離子水外的單獨的漂洗液。 As described above, the method for cleaning an organic EL mask of the present invention has excellent properties of dissolving an organic EL material, and can simplify the rinsing process, making the drying process of the mask easy and simple. Further, the cleaning liquid according to the present invention has excellent properties of dissolving a deposition material and includes a solvent having a boiling point lower than that of water. Therefore, the cleaning liquid has excellent drying properties and does not require a separate rinse liquid other than the ionic water.

為使能更進一步瞭解本發明之特徵及技術內容，請參閱以下有關本發明之詳細說明與附圖，但是此等說明與所附圖式僅係用來說明本發明，而非對本發明的權利範圍作任何的限制。 The detailed description of the present invention and the accompanying drawings are to be understood by the claims The scope is subject to any restrictions.

圖1為示出了根據本發明的一實施方式用於清洗有機EL掩模的方法的流程圖。 FIG. 1 is a flow chart showing a method for cleaning an organic EL mask according to an embodiment of the present invention.

以下，將詳細描述根據本發明的用於清洗有機EL掩模的方法。 Hereinafter, a method for cleaning an organic EL mask according to the present invention will be described in detail.

根據本發明的清洗液可包括四氫呋喃(THF)溶液。四氫呋喃甚至在低溫時也具有優良的清洗性能，因此無需單獨的加熱過程就可用於清洗有機EL掩模。四氫呋喃由下述分子式1來表示，其具有有效地溶解Alq3(三(8-羥基喹啉)鋁)的功能，其中Alq3是在OLED生產過程中的污染掩模的沉積材料。因此，四氫呋喃能顯示出優良的清洗性能。 The cleaning solution according to the present invention may include a tetrahydrofuran (THF) solution. Tetrahydrofuran has excellent cleaning performance even at low temperatures, so it can be used to clean the organic EL mask without a separate heating process. Tetrahydrofuran is represented by the following formula 1, which has a function of efficiently dissolving Alq3 (tris(8-quinolinolato)aluminum), which is a deposition material of a contamination mask in the production process of an OLED. Therefore, tetrahydrofuran can exhibit excellent cleaning performance.

在潔淨的腔室內加入THF清洗液，然後將有機EL的掩模浸泡 在THF清洗液中。THF清洗液的溫度為30至60℃。 Add THF cleaning solution to the clean chamber, then soak the mask of the organic EL In a THF cleaning solution. The temperature of the THF cleaning solution is 30 to 60 °C.

然後，對包含浸泡其內的有機EL掩模的THF清洗液施加超聲波以清洗有機EL掩模。當進行該超聲清洗方法時，可提高沉積材料的溶解且可縮短清洗時間。 Then, ultrasonic waves were applied to the THF cleaning liquid containing the organic EL mask immersed therein to clean the organic EL mask. When the ultrasonic cleaning method is performed, the dissolution of the deposited material can be improved and the cleaning time can be shortened.

在超聲清洗過程完成之後，用去離子水清洗有機EL掩模。在本發明中，由於四氫呋喃在水中的溶解性優良，可無需使用單獨的漂洗液來清洗有機EL掩模。 After the ultrasonic cleaning process is completed, the organic EL mask is washed with deionized water. In the present invention, since the solubility of tetrahydrofuran in water is excellent, it is possible to clean the organic EL mask without using a separate rinse liquid.

在烘箱中乾燥用去離子水清洗的有機EL掩模。這裡，烘箱的溫度優選為50至100℃。 The organic EL mask washed with deionized water was dried in an oven. Here, the temperature of the oven is preferably from 50 to 100 °C.

此外，本發明的清洗液除四氫呋喃(THF)外可進一步包括異丙醇。 Further, the cleaning liquid of the present invention may further include isopropanol in addition to tetrahydrofuran (THF).

異丙醇是一種相對於其他醇類具有溶解有機材料的優良能力的溶劑，且對人體相對無害。此外，異丙醇在用去離子水清洗過程中，顯示出優良的漂洗性能，因此不會產生清洗液殘留在掩模上的問題。 Isopropanol is a solvent having an excellent ability to dissolve organic materials with respect to other alcohols, and is relatively harmless to the human body. Further, since isopropyl alcohol exhibits excellent rinsing performance during washing with deionized water, there is no problem that the cleaning liquid remains on the mask.

承上述，在清洗液包括四氫呋喃(THF)溶液以及異丙醇的實施例中，基於清洗液的總重量，優選包含60至99wt%的四氫呋喃，更優選80至95wt%。如果清洗液中的四氫呋喃的含量小於60wt%，將過度地延長溶解污染掩模表面的沉積材料所需的時間，如果含量超過99wt%，其將並不會進一步提高沉積材料的溶解速率，在經濟上不是優選的。此外，清洗液中異丙醇的含量優選為1至40wt%，且更優選5至20wt%。如果清洗液中異丙醇的含量小於1wt%，四氫呋喃的含量將相對增加，導致成本無效，且用去離子水漂洗清洗液將不會有效。如果異丙醇的含量大於40wt%，清洗液中的四氫呋喃那的含量將相對降低，清洗液去除沉積材料的能力將降低。 In the above embodiment, in the embodiment in which the cleaning liquid includes a tetrahydrofuran (THF) solution and isopropyl alcohol, it is preferably contained in an amount of 60 to 99% by weight, based on the total weight of the cleaning liquid, of tetrahydrofuran, more preferably 80 to 95% by weight. If the content of tetrahydrofuran in the cleaning liquid is less than 60% by weight, the time required to dissolve the deposition material on the surface of the contaminated mask will be excessively prolonged, and if the content exceeds 99% by weight, it will not further increase the dissolution rate of the deposited material in the economy. It is not preferred. Further, the content of isopropyl alcohol in the cleaning liquid is preferably from 1 to 40% by weight, and more preferably from 5 to 20% by weight. If the content of isopropanol in the cleaning solution is less than 1% by weight, the content of tetrahydrofuran will be relatively increased, resulting in cost ineffectiveness, and rinsing the cleaning solution with deionized water will not be effective. If the content of isopropyl alcohol is more than 40% by weight, the content of tetrahydrofuran in the cleaning liquid will be relatively lowered, and the ability of the cleaning liquid to remove the deposited material will be lowered.

對於本發明的清洗液除四氫呋喃(THF)溶液外進一步包括異丙醇，清洗液可用於下述清洗步驟中。 For the cleaning liquid of the present invention, in addition to the tetrahydrofuran (THF) solution, isopropanol is further included, and the cleaning liquid can be used in the following washing step.

利用包括四氫呋喃和異丙醇的清洗液清洗電子材料的方法包括如下步驟：(E)通過在包括四氫呋喃和異丙醇的清洗液中浸泡電子材料來清洗電子材料；以及(F)用去離子水漂洗電子材料。 A method of cleaning an electronic material using a cleaning solution comprising tetrahydrofuran and isopropanol comprises the steps of: (E) cleaning the electronic material by immersing the electronic material in a cleaning solution comprising tetrahydrofuran and isopropanol; and (F) using deionized water Rinse the electronic material.

在清洗步驟(E)中，將電子材料，例如將在AMOLED裝置的生產中所使用的掩模浸泡在清洗液中，以便於通過清洗液的溶解和剝離作用可從電子材料上去除雜質。本發明所使用的清洗液優選為包括四氫呋喃和異丙醇的清洗液。 In the cleaning step (E), an electronic material such as a mask to be used in the production of the AMOLED device is immersed in the cleaning liquid so that impurities can be removed from the electronic material by the dissolution and peeling action of the cleaning liquid. The cleaning liquid used in the present invention is preferably a cleaning liquid comprising tetrahydrofuran and isopropanol.

漂洗步驟(F)可通過在去離子水浸泡在清洗步驟(E)中已去除雜質的電子材料來進行。 The rinsing step (F) can be carried out by immersing the electronic material in which the impurities have been removed in the washing step (E) in deionized water.

在清洗步驟(E)中，為了進一步用清洗液漂洗用去離子水漂洗的掩模，不僅可使用在清洗液中浸泡電子材料的方法，也可使用在電子材料上噴射清洗液的方法。與浸泡方法不同，當使用在掩模上噴射清洗液來進行清洗步驟時，可以防止二次污染。特別地，在噴射方法中，附著在掩模上的有機清洗液可被完全去除，且相對於浸泡方法可減少所使用的清洗液的量。因此，噴射方法在成本和經濟上有優勢。此外，噴射清洗方法具有相比浸泡方法縮短了漂洗時間的優勢。 In the cleaning step (E), in order to further rinse the mask rinsed with deionized water with the cleaning liquid, not only a method of immersing the electronic material in the cleaning liquid but also a method of spraying the cleaning liquid on the electronic material may be used. Unlike the immersion method, secondary pollution can be prevented when the cleaning step is performed by spraying the cleaning liquid on the mask. In particular, in the spraying method, the organic cleaning liquid attached to the mask can be completely removed, and the amount of the cleaning liquid used can be reduced with respect to the immersion method. Therefore, the injection method has advantages in cost and economy. In addition, the jet cleaning method has the advantage of reducing the rinse time compared to the soaking method.

本發明的清洗步驟(E)可在室溫下實施，且因此不需要用於加熱清洗液的單獨過程。 The cleaning step (E) of the present invention can be carried out at room temperature, and thus a separate process for heating the cleaning liquid is not required.

以下，將參照實施例和對比例詳細描述本發明，但本發明的範圍並不限於這些實施例。 Hereinafter, the present invention will be described in detail with reference to the examples and the comparative examples, but the scope of the invention is not limited to these examples.

實施例1至6以及對比例1至6：有機EL掩模的清洗 Examples 1 to 6 and Comparative Examples 1 to 6: Cleaning of an organic EL mask

實施例1 Example 1

在超聲處理裝置的潔淨腔室內加入作為清洗液的20升的THF溶液，然後在室溫下，將具有有機EL材料沉積其上的有機EL氣相沉積掩膜浸泡在THF溶液中。超聲處理上述THF溶液，以清洗有機EL氣相沉積掩模。在清洗過程完成之後，用去離子水漂洗有機EL氣相沉積掩模一次。具體地，在清洗過程完成之後，使用噴 射設備用去離子水以30秒漂洗有機EL氣相沉積掩模一次。 A 20 liter THF solution as a cleaning liquid was placed in a clean chamber of the ultrasonic treatment apparatus, and then an organic EL vapor deposition mask having an organic EL material deposited thereon was immersed in a THF solution at room temperature. The above THF solution was sonicated to wash the organic EL vapor deposition mask. After the cleaning process is completed, the organic EL vapor deposition mask is rinsed once with deionized water. Specifically, after the cleaning process is completed, use the spray The blasting apparatus rinsed the organic EL vapor deposition mask once with deionized water for 30 seconds.

實施例2 Example 2

以與實施例1相同的方式實施該實施例，除了用去離子水進行兩次漂洗處理。 This example was carried out in the same manner as in Example 1, except that the rinsing treatment was carried out twice with deionized water.

實施例3 Example 3

以與實施例1相同的方式實施該實施例，除了用去離子水進行三次漂洗處理。 This example was carried out in the same manner as in Example 1, except that the rinsing treatment was carried out three times with deionized water.

實施例4 Example 4

以與實施例1相同的方式實施該實施例，除了以THF清洗液的處理溫度為50℃來替代室溫。 This example was carried out in the same manner as in Example 1, except that the treatment temperature of the THF washing solution was 50 ° C instead of room temperature.

實施例5 Example 5

以與實施例4相同的方式實施該實施例，除了用去離子水進行兩次漂洗處理。 This example was carried out in the same manner as in Example 4 except that the rinsing treatment was carried out twice with deionized water.

實施例6 Example 6

以與實施例4相同的方式實施該實施例，除了用去離子水進行三次漂洗處理。 This example was carried out in the same manner as in Example 4 except that the rinsing treatment was carried out three times with deionized water.

對比例1 Comparative example 1

以與實施例1相同的方式實施該實施例，除了用NMP溶液替代THF溶液作為清洗液。 This example was carried out in the same manner as in Example 1, except that the NMP solution was used instead of the THF solution as a cleaning liquid.

對比例2 Comparative example 2

以與對比例1相同的方式實施該對比例，除了用去離子水進行兩次漂洗處理。 This comparative example was carried out in the same manner as in Comparative Example 1, except that the rinsing treatment was carried out twice with deionized water.

對比例3 Comparative example 3

以與對比例1相同的方式實施該對比例，除了用去離子水進行三次漂洗處理。 This comparative example was carried out in the same manner as in Comparative Example 1, except that three rinse treatments were carried out with deionized water.

對比例4 Comparative example 4

以與對比例1相同的方式實施該對比例，除了以NMP清洗液的處理溫度為50℃來替代室溫。 This comparative example was carried out in the same manner as in Comparative Example 1, except that the treatment temperature of the NMP cleaning liquid was changed to 50 ° C instead of room temperature.

對比例5 Comparative example 5

以與對比例4相同的方式實施該對比例，除了用去離子水進行兩次漂洗處理。 This comparative example was carried out in the same manner as in Comparative Example 4 except that the rinsing treatment was carried out twice with deionized water.

對比例6 Comparative example 6

以與對比例4相同的方式實施該對比例，除了用去離子水進行三次漂洗處理。 This comparative example was carried out in the same manner as in Comparative Example 4 except that the rinsing treatment was carried out three times with deionized water.

實施例7至11和對比例7至14：從掩模去除沉積材料的性能以及漂洗清洗液的性能 Examples 7 to 11 and Comparative Examples 7 to 14: removal of the properties of the deposited material from the mask and the performance of the rinse cleaning solution

清洗液組合物的製備：下述表1中所示的成分相互混合並攪拌，從而製備清洗液組合物。 Preparation of Cleaning Liquid Composition: The components shown in Table 1 below were mixed with each other and stirred to prepare a cleaning liquid composition.

清洗液組合物的製備 Preparation of cleaning solution composition

下述表1中所示的成分相互混合並攪拌，從而製備清洗液組合物。 The components shown in the following Table 1 were mixed with each other and stirred to prepare a cleaning liquid composition.

THF：四氫呋喃 THF: tetrahydrofuran

IPA：異丙醇 IPA: isopropanol

NMP：N-甲基吡咯烷酮 NMP: N-methylpyrrolidone

DMAc：二甲基乙醯胺 DMAc: dimethyl acetamide

測試例1：清洗性能和漂洗性能的評價 Test Example 1: Evaluation of cleaning performance and rinsing performance

通過測量以超聲處理完全清洗實施例1至6和對比例1至6的金屬試樣所需要的時間來評價的清洗性能。以下述標準評價清洗性能：◎：在一分鐘內去除有機材料；○：在三分鐘內去除有機材料；以及△：在五分鐘內去除有機材料。 The cleaning performance was evaluated by measuring the time required to completely clean the metal samples of Examples 1 to 6 and Comparative Examples 1 to 6 by ultrasonic treatment. The cleaning performance was evaluated by the following criteria: ◎: removal of the organic material in one minute; ○: removal of the organic material in three minutes; and Δ: removal of the organic material in five minutes.

此外，通過在充滿去離子水的腔室內浸泡各個清洗後的金屬試樣一分鐘，並檢測去離子水中的有機材料來評價漂洗性能。以下述標準評價漂洗性能：○：漂洗良好；以及X：漂洗不足。下述表2示出了評價結果。 Further, the rinsing performance was evaluated by soaking each of the washed metal samples in a chamber filled with deionized water for one minute and detecting the organic material in the deionized water. The rinsing performance was evaluated by the following criteria: ○: rinsing was good; and X: insufficient rinsing. Table 2 below shows the evaluation results.

在上述表2中可看出，當使用常規的NMP溶液作為清洗液時，在清洗溫度為50℃的對比例4至6中，清洗性能相對良好，然而在清洗溫度為室溫的對比例1至3中，清洗性能較差，這表明在清洗過程之前需要加熱清洗液的過程。此外，對比例1至6僅在金屬試樣用去離子水漂洗三次或更多次時顯示出良好的漂洗性能，這表明漂洗過程不簡單。 As can be seen from the above Table 2, when a conventional NMP solution was used as the cleaning liquid, the cleaning performance was relatively good in Comparative Examples 4 to 6 at a cleaning temperature of 50 ° C, whereas the cleaning temperature was room temperature in Comparative Example 1 To 3, the cleaning performance is poor, which indicates the process of heating the cleaning liquid before the cleaning process. Further, Comparative Examples 1 to 6 showed good rinsing performance only when the metal sample was rinsed three times or more with deionized water, which indicates that the rinsing process is not simple.

與此相比，實施例1至6在室溫和50℃時均顯示了良好的清洗性能和漂洗性能。 In contrast, Examples 1 to 6 showed good cleaning performance and rinsing performance at both room temperature and 50 °C.

測試例2：從掩模去除沉積材料的性能 Test Example 2: Removal of deposited material properties from a mask

準備由沉積材料Alq3污染的金屬試樣並將其在上述表1所示的清洗液組合物中浸泡10分鐘。然後，用流動的去離子水漂洗金屬試樣20秒。在漂洗過程之後，金屬試樣在低壓下用氮氣吹乾。然後，通過UV照射、目視觀察、光學顯微鏡評價從金屬試樣去除沉積材料的性能。下述表3中示出了評價結果。 A metal sample contaminated with the deposition material Alq3 was prepared and immersed in the cleaning liquid composition shown in Table 1 above for 10 minutes. The metal coupon was then rinsed with flowing deionized water for 20 seconds. After the rinsing process, the metal coupon was blown dry with nitrogen at a low pressure. Then, the performance of removing the deposited material from the metal sample was evaluated by UV irradiation, visual observation, and optical microscopy. The evaluation results are shown in Table 3 below.

通過UV照射、目視觀察、光學顯微鏡來進行評價，評價的標準如下：◎：完全去除沉積材料；○：去除大部分沉積材料，但是當進行UV照射時，可觀察到非常少量的沉積物；△：去除約50%的沉積材料；以及X：未去除沉積物。 The evaluation was carried out by UV irradiation, visual observation, and optical microscopy, and the evaluation criteria were as follows: ◎: complete removal of the deposited material; ○: removal of most of the deposited material, but when UV irradiation was performed, a very small amount of deposit was observed; : removing about 50% of the deposited material; and X: removing the deposit.

測試例3：漂洗清洗液的性能的評價 Test Example 3: Evaluation of the performance of the rinse cleaning solution

將由沉積材料Alq3污染的金屬試樣在上述表1所示的清洗液組合物中浸泡10分鐘。然後，將該試樣在100ml的去離子水中浸泡10秒，然後再在100ml的去離子水中浸泡10秒，且最後再在100ml的去離子水中浸泡10秒。通過總有機碳(TOC)分析器分析去離子水樣品來測量去離子水中包含的有機碳的量，由此測量 漂洗性能。 The metal sample contaminated with the deposition material Alq3 was immersed in the cleaning liquid composition shown in Table 1 above for 10 minutes. The sample was then soaked in 100 ml of deionized water for 10 seconds, then immersed in 100 ml of deionized water for 10 seconds, and finally soaked in 100 ml of deionized water for 10 seconds. The amount of organic carbon contained in the deionized water is measured by analyzing the deionized water sample by a total organic carbon (TOC) analyzer, thereby measuring Rinsing performance.

在下述表3中表示出漂洗性能的測量結果。 The measurement results of the rinsing performance are shown in Table 3 below.

基於去離子水樣品的TOC分析的結果評價漂洗性能，且評價標準如下：◎：優良的漂洗清洗液的性能(TOC：100 ppb或更少)；○：良好的漂洗清洗液的性能(TOC：100-300 ppb)；△：中度的漂洗清洗液的性能(TOC：300-1000 ppb)；以及X：較差的漂洗清洗液的性能(TOC：1000 ppb或更多)。 The rinsing performance was evaluated based on the results of TOC analysis of the deionized water sample, and the evaluation criteria were as follows: ◎: excellent rinsing washing liquid performance (TOC: 100 ppb or less); ○: good rinsing washing liquid performance (TOC: 100-300 ppb); △: performance of moderate rinse wash solution (TOC: 300-1000 ppb); and X: performance of poor rinse wash solution (TOC: 1000 ppb or more).

從上述表3中可看出，對於實施例7至11，在10分鐘的短暫時間內從掩模上完全去除了沉積材料Alq3。對於對比例7至11，金屬試樣的表面殘留痕量的沉積材料，對於對比例10至14，在金屬試樣上殘留有大量的沉積材料。這些結果表明，當以合適比例混和四氫呋喃和異丙醇時，其顯示出優良的去除性能和漂洗性能。 As can be seen from the above Table 3, for Examples 7 to 11, the deposition material Alq3 was completely removed from the mask in a short time of 10 minutes. For Comparative Examples 7 to 11, a trace amount of the deposited material remained on the surface of the metal sample, and for Comparative Examples 10 to 14, a large amount of deposited material remained on the metal sample. These results show that when tetrahydrofuran and isopropanol are mixed in an appropriate ratio, they exhibit excellent removal properties and rinsing properties.

以上所述僅為本發明的實施例，其並非用以限定本發明的專利保護範圍。任何熟習相像技藝者，在不脫離本發明的精神與範圍內，所作的更動及潤飾的等效替換，仍為本發明的專利保護範圍內。 The above is only an embodiment of the present invention, and is not intended to limit the scope of the invention. It is still within the scope of patent protection of the present invention to make any substitutions and modifications of the modifications made by those skilled in the art without departing from the spirit and scope of the invention.

Claims (8)

一種用於清洗有機EL掩模的方法，所述方法包括以下步驟：(A)在一潔淨的腔室內提供一四氫呋喃THF溶液；(B)將所述有機EL掩模浸泡在所述THF溶液中；(C)超聲清洗浸泡在所述THF溶液中的該有機EL掩模；以及(D)用一去離子水漂洗清洗後的該有機EL掩模。 A method for cleaning an organic EL mask, the method comprising the steps of: (A) providing a tetrahydrofuran THF solution in a clean chamber; (B) immersing the organic EL mask in the THF solution (C) ultrasonic cleaning the organic EL mask immersed in the THF solution; and (D) rinsing the washed organic EL mask with a deionized water. 如申請專利範圍第1項所述之用於清洗有機EL掩模的方法，其中該THF溶液具有室溫的溫度。 A method for cleaning an organic EL mask as described in claim 1, wherein the THF solution has a temperature at room temperature. 如申請專利範圍第1項所述之用於清洗有機EL掩模的方法，其中該THF溶液噴射在該有機EL掩模的表面上。 A method for cleaning an organic EL mask as described in claim 1, wherein the THF solution is sprayed on a surface of the organic EL mask. 如申請專利範圍第1項所述之用於清洗有機EL掩模的方法，其中該方法在室溫下進行。 A method for cleaning an organic EL mask as described in claim 1, wherein the method is carried out at room temperature. 一種用於有機EL掩模的清洗液，該清洗液包括一四氫呋喃和一異丙醇。 A cleaning solution for an organic EL mask, the cleaning solution comprising a tetrahydrofuran and an isopropanol. 一種用於清洗有機EL掩模的方法，所述方法包括以下步驟：(E)使用如申請專利範圍第5項所述的清洗液中浸泡所述有機EL掩模來清洗該有機EL掩模；以及(F)用去離子水漂洗該有機EL掩模。 A method for cleaning an organic EL mask, the method comprising the steps of: (E) washing the organic EL mask by immersing the organic EL mask in a cleaning solution as described in claim 5; And (F) rinsing the organic EL mask with deionized water. 如申請專利範圍第6項所述之用於清洗有機EL掩模的方法，其中該清洗步驟通過在所述有機EL掩模的表面上噴射該清洗液來進行。 A method for cleaning an organic EL mask as described in claim 6, wherein the cleaning step is performed by spraying the cleaning liquid on a surface of the organic EL mask. 如申請專利範圍第6項所述之用於清洗有機EL掩模的方法，其中該清洗步驟在室溫下進行。 The method for cleaning an organic EL mask as described in claim 6, wherein the washing step is performed at room temperature.