CN103157619A - Washing method for mask used in vapor deposition step in production of organic EL device and cleaning agent - Google Patents
Washing method for mask used in vapor deposition step in production of organic EL device and cleaning agent Download PDFInfo
- Publication number
- CN103157619A CN103157619A CN2012104590634A CN201210459063A CN103157619A CN 103157619 A CN103157619 A CN 103157619A CN 2012104590634 A CN2012104590634 A CN 2012104590634A CN 201210459063 A CN201210459063 A CN 201210459063A CN 103157619 A CN103157619 A CN 103157619A
- Authority
- CN
- China
- Prior art keywords
- mask
- organic
- cleaning
- cleaning fluid
- deionized water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a washing method for organic EL mask. The method includes the steps of (a) providing THF solution in a clean chamber, (b) immersing the organic EL mask in the THF solution, (c) cleaning the organic EL mask immersed in the THF solution with ultrasound, and (d) rinsing the cleaned organic EL mask with deionized water. The invention further discloses EL mask cleaning agent containing tetrahydrofuran and isopropanol.
Description
The cross reference of related application
The application requires the Korean Patent Application No. 10-2011-0135850 that submits on December 15th, 2011 and on December 16th, 2011 and the priority of 10-2011-0136361, its by introducing integral body incorporate this paper into.
Technical field
Exemplified embodiment of the present invention relates to cleaning method, and more particularly, relates to for the vapor deposition processes of removing making organic EL device being attached to the organic EL Material of mask, and relates to the cleaning liquid composition for organic EL mask.
Background technology
Flat-panel screens as display device receives much concern, and comprises liquid crystal display device and the display device with organic electroluminescent (EL) device.Liquid crystal display device has lower energy consumption, but the image that needs exterior light unit (back light unit) to obtain becoming clear, yet display device and liquid crystal display device with organic EL device need not, it does not need back light unit, this is because organic EL device is self-luminous, so capable of reducing energy consumption.In addition, the display device that has an organic EL device has the characteristics at high brightness and wide visual angle.According to the type of organic material, organic EL device can be divided into low molecule-type organic EL device and polymer electrolyte organic EL device.Can produce these organic EL devices by diverse ways.With regard to low molecule-type organic EL device, form film by vapor deposition processes, and for the polymer electrolyte organic EL device, form film by spin coating method or ink ejecting method after dissolving in solution.
Low molecule-type organic EL device just for example utilizes mask to pass through vacuum vapor deposition and forms successively positive pole, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and negative pole form layer structure on glass substrate.
Near the mask that utilization is placed on substrate forms positive pole, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and negative pole by vacuum vapor deposition.Yet especially the vapor deposition mask of RGB layer need to be highly accurate owing to being used for fine pattern, therefore it is difficult to make and is very expensive.In addition, when mask was used for repeatedly vapour deposition in the process of the organic layer pattern of the low molecule-type organic EL device of formation, organic material deposited and is attached on mask, makes the mask pattern of high precision can not be transferred to substrate.Therefore, in order to realize highly accurate mask pattern, a nonexpondable expensive mask will be processed as refuse, and this has just increased production cost and has been difficult to large-scale production.In organic EL field, do not attempt at present saving cost by the recycling mask.
Attempt to address this problem, the open 10-2005-0054452 of Korean Patent discloses a kind of solution and method for cleaning mask, wherein this mask in vacuum vapor deposition for the production of low molecule-type organic EL device.Yet problem is, is rinsing liquid complicated and need to be extra removing organic EL Material rinse cycle subsequently.In addition, the open 10-2004-0072279 of Korean Patent discloses a kind of device be used to cleaning organic EL (electroluminescence) mask, but problem is, is used for that the device of evaporation and liquefaction solvent is very complicated and cleaning process is consuming time.In addition, the open 10-2007-0065646 of Korean Patent discloses the purposes of the cleaning fluid that comprises the polar aprotic solvent isopropyl alcohol, however problem be, the scarce capacity of cleaning fluid dissolving deposition materials can not reach fully and clean.
Patent document 1:KR10-2005-0054452A
Patent document 2:KR10-2004-0072279A
Patent document 3:KR10-2007-0065646A
Summary of the invention
Therefore, the present invention be directed to problems of the prior art and complete.
Embodiments of the present invention provide a kind of method be used to cleaning organic EL mask, and it has the performance of good dissolving organic EL Material and can simplify the rinse cycle that is simplified, so that the mask dry run is easy and simple.
Another embodiment of the invention provides a kind of cleaning fluid and utilize this cleaning fluid to clean the method for mask, this cleaning fluid has good ability and dissolves deposition materials, has good drying property and does not need independent rinsing liquid except deionized water.
According to the embodiment of the present invention, comprise the steps: that for the method for cleaning organic EL mask (A) provides oxolane (THF) solution in the chamber of cleaning; (B) organic EL mask is immersed in THF solution; (C) ultrasonic cleaning is immersed in the organic EL mask in THF solution; And (D) with the organic EL mask after the rinsed with deionized water cleaning.
According to another embodiment of the present invention, the cleaning fluid that is used for organic EL mask comprises oxolane and isopropyl alcohol.
As mentioned above, have the premium properties of dissolving organic EL Material for the creative method of cleaning organic EL mask, and can simplify rinse cycle, make the dry run of covering plate easy and simple.In addition, cleaning fluid according to the present invention has the performance of good dissolving deposition materials and comprises that boiling point is lower than the solvent of water.Therefore, cleaning fluid has good drying property and does not need independent rinsing liquid except deionized water.
Description of drawings
Fig. 1 is the flow chart that shows according to an embodiment of the present invention the method that is used for cleaning organic EL mask.
The specific embodiment
Below, will describe in detail according to the method be used to cleaning organic EL mask of the present invention.
Can comprise oxolane (THF) solution according to cleaning fluid of the present invention.Oxolane even also has good cleaning performance when low temperature, therefore need not independent heating process just can be used for cleaning organic EL mask.Oxolane represents by following molecular formula 1, and it has the function of effectively dissolving Alq3 (three (oxine) aluminium), and wherein Alq3 is the deposition materials of the pollution mask in the OLED production process.Therefore, oxolane can demonstrate good cleaning performance.
[molecular formula 1]
Add the THF cleaning fluid in the chamber of cleaning, then the mask with organic EL is immersed in the THF cleaning fluid.Here, the temperature of THF cleaning fluid is 30 to 60 ℃.
Then, apply ultrasonic wave to clean organic EL mask to comprising the THF cleaning fluid that soaks the organic EL mask in it.When carrying out this ultrasonic cleaning method, can improve the dissolving of deposition materials and can shorten scavenging period.
After the ultrasonic cleaning process is completed, with the organic EL mask of washed with de-ionized water.In the present invention, the dissolubility due to oxolane in water is good, can need not to clean organic EL mask with independent rinsing liquid.
Dry organic EL mask with washed with de-ionized water in baking oven.Here, the temperature of baking oven is preferably 50 to 100 ℃.
In addition, cleaning fluid of the present invention can further comprise isopropyl alcohol except oxolane (THF).
Isopropyl alcohol is a kind of solvent that has the good ability of dissolving organic material with respect to other alcohols, and relatively harmless to human body.In addition, isopropyl alcohol demonstrates good rinsing performance with in the deionized water cleaning process, therefore can not produce cleaning fluid and remain in problem on mask.
Further comprise isopropyl alcohol for cleaning fluid of the present invention except oxolane (THF) solution, based on the gross weight of cleaning fluid, preferably comprise 60 to 99wt% oxolane, more preferably 80 to 95wt%.If the content of the oxolane in cleaning fluid is less than 60wt%, to exceedingly extend the required time of deposition materials that mask surface is polluted in dissolving, if content surpasses 99wt%, it can't further improve the rate of dissolution of deposition materials, not be preferred economically.In addition, in cleaning fluid, the content of isopropyl alcohol is preferably 1 to 40wt%, and more preferably 5 to 20wt%.If in cleaning fluid, the content of isopropyl alcohol is less than 1wt%, the content of oxolane will increase relatively, cause cost invalid, and will can be ineffective with the rinsed with deionized water cleaning fluid.If the content of isopropyl alcohol is greater than 40wt%, that content of the oxolane in cleaning fluid is with relative reduce, and the ability that cleaning fluid is removed deposition materials will reduce.
Further comprise isopropyl alcohol for cleaning fluid of the present invention except oxolane (THF) solution, cleaning fluid can be used in following cleaning step.
Utilization comprises that the method for the cleaning fluid cleaning electronic material of oxolane and isopropyl alcohol comprises the steps: that (E) cleans electronic material by soak electronic material in the cleaning fluid that comprises oxolane and isopropyl alcohol; And (F) use the rinsed with deionized water electronic material.
In cleaning step (E), with electronic material, during the mask that for example uses in the production of AMOLED device is immersed in cleaning fluid, so that can be from the electronic material removal of impurity of getting on by the dissolving of cleaning fluid and the effect of peeling off.Cleaning fluid used in the present invention is preferably the cleaning fluid that comprises oxolane and isopropyl alcohol.
Rinse step (F) can go deimpurity electronic material to carry out by being immersed in deionized water in cleaning step (E).
In cleaning step (E), with the mask of cleaning fluid rinsing with rinsed with deionized water, not only can use the method for soaking electronic material in cleaning fluid for further, also can use the method for jet cleaning liquid on electronic material.When jet cleaning liquid carries out cleaning step on mask, different from immersion process, it has prevented secondary pollution.Especially, in injection method, the organic cleaning fluid that is attached on mask can be completely removed, and can reduce the amount of the cleaning fluid that uses with respect to immersion process.Therefore, injection method is at cost with have superiority economically.In addition, jet cleaning method has the advantage that immersion process has shortened rinsing time of comparing.
Cleaning step of the present invention (E) can at room temperature be implemented, and does not therefore need the separate processes for heated wash liquid.
Below, describe the present invention in detail with reference to embodiment and Comparative Examples, but scope of the present invention is not limited to these embodiment.
Embodiment 1 to 6 and Comparative Examples 1 to 6: the cleaning of organic EL mask
Embodiment 1
Add the THF solution of 20 liters as cleaning fluid in the clean chamber of ultrasonic processing apparatus, then at room temperature, will have organic EL vapour deposition mask that organic EL Material deposits on it and be immersed in THF solution.Ultrasonic pack processing contains the THF solution that soaks the organic EL vapour deposition mask in it, to clean organic EL vapor deposition mask.After cleaning process is completed, with the organic EL vapor deposition mask of rinsed with deionized water once.Particularly, after cleaning process is completed, use spraying equipment with deionized water with the organic EL vapor deposition mask of rinsing in 30 seconds once.
Embodiment 2
Implement this embodiment in the mode identical with embodiment 1, process except carry out twice rinsing with deionized water.
Embodiment 3
Implement this embodiment in the mode identical with embodiment 1, process except carry out three rinsings with deionized water.
Embodiment 4
Implement this embodiment in the mode identical with embodiment 1, except substituting room temperature take the treatment temperature of THF cleaning fluid as 50 ℃.
Embodiment 5
Implement this embodiment in the mode identical with embodiment 4, process except carry out twice rinsing with deionized water.
Embodiment 6
Implement this embodiment in the mode identical with embodiment 4, process except carry out three rinsings with deionized water.
Comparative Examples 1
Implement this embodiment in the mode identical with embodiment 1, except substituting THF solution as cleaning fluid with nmp solution.
Comparative Examples 2
Implement this Comparative Examples in the mode identical with Comparative Examples 1, process except carry out twice rinsing with deionized water.
Comparative Examples 3
Implement this Comparative Examples in the mode identical with Comparative Examples 1, process except carry out three rinsings with deionized water.
Comparative Examples 4
Implement this Comparative Examples in the mode identical with Comparative Examples 1, except substituting room temperature take the treatment temperature of NMP cleaning fluid as 50 ℃.
Comparative Examples 5
Implement this Comparative Examples in the mode identical with Comparative Examples 4, process except carry out twice rinsing with deionized water.
Comparative Examples 6
Implement this Comparative Examples in the mode identical with Comparative Examples 4, process except carry out three rinsings with deionized water.
Embodiment 7 to 11 and Comparative Examples 7 to 14: remove the performance of deposition materials and the performance of rinsing cleaning fluid from mask
The preparation of cleaning liquid composition
Composition shown in following table 1 mutually mixes and stirs, thus the preparation cleaning liquid composition.
[table 1]
THF: oxolane
IPA: isopropyl alcohol
The NMP:N-methyl pyrrolidone
DMAc: dimethylacetylamide
Test case 1: the evaluation of cleaning performance and rinsing performance
Wash by measuring with the ultrasonic all clear of handling the cleaning performance that the needed time of test button of embodiment 1 to 6 and Comparative Examples 1 to 6 estimates.With following standard evaluation cleaning performance: ◎: removed organic material in one minute; Zero: removed organic material in three minutes; And △: removed organic material in five minutes.
In addition, the test button after each cleans by immersion in being full of the chamber of deionized water one minute, and the organic material that detects in deionized water is estimated rinsing performance.With following standard evaluation rinsing performance: zero: rinsing is good; And X: rinsing is not enough.Following table 2 shows evaluation result.
[table 2]
Can find out in above-mentioned table 2, when using conventional nmp solution as cleaning fluid, in cleaning temperature is the Comparative Examples 4 to 6 of 50 ℃, cleaning performance is relatively good, yet be in the Comparative Examples 1 to 3 of room temperature at cleaning temperature, cleaning performance is relatively poor, and this shows the process that needed heated wash liquid before cleaning process.In addition, Comparative Examples 1 to 6 only demonstrates good rinsing performance at test button during with rinsed with deionized water three times or more times, and this shows that rinse cycle is remarkable.
In contrast to this, embodiment 1 to 6 has all shown good cleaning performance and rinsing performance when room temperature and 50 ℃.
Test case 2: the performance of removing deposition materials from mask
The test button that preparation is polluted by deposition materials Alq3 also soaks them 10 minutes in the cleaning liquid composition shown in above-mentioned table 1.Then, use mobile rinsed with deionized water test button 20 seconds.After rinse cycle, test button under low pressure dries up with nitrogen.Then, remove the performance of deposition materials from test button by UV irradiation, visualization, light microscope evaluation.In following table 3, evaluation result has been shown.
Estimate by UV irradiation, visualization, light microscope, standard of evaluation is as follows: ◎: remove deposition materials fully; Zero: remove most of deposition materials, but when carrying out the UV irradiation, can be observed very small amount of deposit; △: remove approximately 50% deposition materials; And X: do not remove deposit.
Test case 3: the evaluation of the performance of rinsing cleaning fluid
To be soaked 10 minutes in the cleaning liquid composition shown in above-mentioned table 1 by the test button that deposition materials Alq3 pollutes.Then, this sample was soaked 10 seconds in the deionized water of 100ml, and then soaked 10 seconds in the deionized water of 100ml, and soaked 10 seconds in the deionized water of 100ml more at last.Analyze by total organic carbon (TOC) analyzer the amount that the deionized water sample is measured the organic carbon that comprises in deionized water, measure thus rinsing performance.
The measurement result of rinsing performance has been shown in following table 3.
The evaluation of result rinsing performance of analyzing based on the TOC of deionized water sample, and evaluation criterion is as follows: ◎: the performance of good rinsing cleaning fluid (TOC:100ppb or still less); Zero: the performance of good rinsing cleaning fluid (TOC:100-300 ppb); △: the performance (TOC:300-1000ppb) of the rinsing cleaning fluid of moderate; And X: the performance of relatively poor rinsing cleaning fluid (TOC:1000 ppb or more).
[table 3]
| ? | Remove the performance of deposition materials Alq3 | The performance of rinsing cleaning fluid |
| Embodiment 7 | ◎ | ○ |
| Embodiment 8 | ◎ | ◎ |
| Embodiment 9 | ◎ | ◎ |
| Embodiment 10 | ◎ | ◎ |
| Embodiment 11 | ◎ | ◎ |
| Comparative Examples 7 | ○ | ◎ |
| Comparative Examples 8 | ○ | ◎ |
| Comparative Examples 9 | ○ | ○ |
| Comparative Examples 10 | △ | ◎ |
| Comparative Examples 11 | △ | △ |
| Comparative Examples 12 | △ | △ |
| Comparative Examples 13 | △ | △ |
| Comparative Examples 14 | △ | △ |
Can find out from above-mentioned table 3, for embodiment 7 to 11, remove deposition materials Alq3 fully from mask within the blink of 10 minutes.For Comparative Examples 7 to 11, the deposition materials of the remained on surface trace of test button, for Comparative Examples 10 to 14, residual on test button have a large amount of deposition materials.These results show, when with the mixed oxolane of proper ratio and isopropyl alcohol, it demonstrates good removal capacity and rinsing performance.
Claims (8)
1. one kind is used for the method clean organic EL mask, said method comprising the steps of:
(A) provide tetrahydrofuran THF solution in the chamber of cleaning;
(B) described organic EL mask is immersed in described THF solution;
(C) ultrasonic cleaning is immersed in the described organic EL mask in described THF solution; And
(D) with the described organic EL mask after the rinsed with deionized water cleaning.
2. method according to claim 1, wherein, described THF solution has the temperature of room temperature.
3. method according to claim 1, wherein, described THF solution is injected on the surface of described organic EL mask.
4. method according to claim 1, wherein, described method is at room temperature carried out.
5. cleaning fluid that is used for organic EL mask, described cleaning fluid comprises oxolane and isopropyl alcohol.
6. one kind is used for the method clean organic EL mask, said method comprising the steps of:
(E) clean described organic EL mask by soak described organic EL mask in cleaning fluid claimed in claim 5; And
(F) with the described organic EL mask of rinsed with deionized water.
7. method according to claim 6, wherein, described cleaning step is undertaken by spray described cleaning fluid on the surface of described organic EL mask.
8. method according to claim 6, wherein, described cleaning step at room temperature carries out.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110135850A KR20130068571A (en) | 2011-12-15 | 2011-12-15 | Washing method for mask used in vapor deposition step in production of organic el device |
| KR10-2011-0135850 | 2011-12-15 | ||
| KR1020110136361A KR20130068912A (en) | 2011-12-16 | 2011-12-16 | Cleaning solution composition for electronic material and cleaning method for electronic material using the same |
| KR10-2011-0136361 | 2011-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103157619A true CN103157619A (en) | 2013-06-19 |
Family
ID=48581449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104590634A Pending CN103157619A (en) | 2011-12-15 | 2012-11-14 | Washing method for mask used in vapor deposition step in production of organic EL device and cleaning agent |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103157619A (en) |
| TW (1) | TW201323102A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154821A (en) * | 2015-07-31 | 2015-12-16 | 深圳市星火辉煌***工程有限公司 | Cleaning technology of organic evaporation MASK |
| CN105714320A (en) * | 2016-03-08 | 2016-06-29 | 湖南金裕环保科技有限公司 | Preparation method for quick-drying cleaning agent |
| US9636718B2 (en) | 2014-12-24 | 2017-05-02 | Boe Technology Group Co., Ltd. | Mask cleaning apparatus and mask cleaning method |
| CN110449398A (en) * | 2019-07-02 | 2019-11-15 | 成都拓维高科光电科技有限公司 | A kind of mask plate precision regeneration technology and its system |
| CN111172550A (en) * | 2020-02-14 | 2020-05-19 | 福建省佑达环保材料有限公司 | OLED mask cleaning agent and cleaning process thereof |
| CN113857139A (en) * | 2021-09-10 | 2021-12-31 | 四川富乐德科技发展有限公司 | Cryopump purge |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1660983A (en) * | 2003-12-04 | 2005-08-31 | 关东化学株式会社 | Cleaning solution and cleaning method for mask used in vacuum vapor deposition step in production of low molecular weight organic el device |
| CN101096749A (en) * | 2006-06-30 | 2008-01-02 | Lg.菲利浦Lcd株式会社 | Method of recycling crystal sensor of evaporation apparatus |
| CN101834118A (en) * | 2009-03-09 | 2010-09-15 | 株式会社日立高新技术 | Cleaning apparatus and cleaning method of mask member, and organic EL display |
| CN101888906A (en) * | 2007-12-17 | 2010-11-17 | 三洋化成工业株式会社 | Cleaning agent and cleaning method for electronic material |
| JP2011183249A (en) * | 2010-03-04 | 2011-09-22 | Hitachi High-Technologies Corp | Cleaning device for vapor deposition mask |
-
2012
- 2012-11-07 TW TW101141297A patent/TW201323102A/en unknown
- 2012-11-14 CN CN2012104590634A patent/CN103157619A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1660983A (en) * | 2003-12-04 | 2005-08-31 | 关东化学株式会社 | Cleaning solution and cleaning method for mask used in vacuum vapor deposition step in production of low molecular weight organic el device |
| CN101096749A (en) * | 2006-06-30 | 2008-01-02 | Lg.菲利浦Lcd株式会社 | Method of recycling crystal sensor of evaporation apparatus |
| CN101888906A (en) * | 2007-12-17 | 2010-11-17 | 三洋化成工业株式会社 | Cleaning agent and cleaning method for electronic material |
| CN101834118A (en) * | 2009-03-09 | 2010-09-15 | 株式会社日立高新技术 | Cleaning apparatus and cleaning method of mask member, and organic EL display |
| JP2011183249A (en) * | 2010-03-04 | 2011-09-22 | Hitachi High-Technologies Corp | Cleaning device for vapor deposition mask |
Non-Patent Citations (1)
| Title |
|---|
| 陈志远等: "《氮基气氛热处理》", 31 October 1988, 机械工业出版社 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9636718B2 (en) | 2014-12-24 | 2017-05-02 | Boe Technology Group Co., Ltd. | Mask cleaning apparatus and mask cleaning method |
| CN105154821A (en) * | 2015-07-31 | 2015-12-16 | 深圳市星火辉煌***工程有限公司 | Cleaning technology of organic evaporation MASK |
| CN105714320A (en) * | 2016-03-08 | 2016-06-29 | 湖南金裕环保科技有限公司 | Preparation method for quick-drying cleaning agent |
| CN110449398A (en) * | 2019-07-02 | 2019-11-15 | 成都拓维高科光电科技有限公司 | A kind of mask plate precision regeneration technology and its system |
| CN111172550A (en) * | 2020-02-14 | 2020-05-19 | 福建省佑达环保材料有限公司 | OLED mask cleaning agent and cleaning process thereof |
| CN113857139A (en) * | 2021-09-10 | 2021-12-31 | 四川富乐德科技发展有限公司 | Cryopump purge |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201323102A (en) | 2013-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103157619A (en) | Washing method for mask used in vapor deposition step in production of organic EL device and cleaning agent | |
| KR101534832B1 (en) | Wet, dry composite mask cleaning device | |
| CN101717645A (en) | Etching plaster for metal and metal oxide transparent conducting layer and etching process | |
| CN110449398B (en) | Mask precision regeneration process and system thereof | |
| CN101221355B (en) | Cleaning method and device for photo-etching mask plate in manufacture process of organic electroluminescence device | |
| CN102399648B (en) | Fluorine-containing cleaning solution | |
| US8323439B2 (en) | Depositing carbon nanotubes onto substrate | |
| CN102154711A (en) | Monocrystal silicon cleaning liquid and precleaning process | |
| TWI467349B (en) | Manufacturing method of substrates having patterned film object of conductive polymer and substrates having patterned film object of conductive polymer | |
| JP2010153381A (en) | Organic light emitting display device, and method of manufacturing the same | |
| CN101795537A (en) | Solder mask printing technology of microwave high-frequency circuit board | |
| CN104485388A (en) | Reworking method for defective silicon wafers after PECVD (plasma enhanced chemical vapor deposition) coating of crystal silicon solar cells | |
| CN105723472A (en) | Method of manufacturing surface-treated transparent conductive polymer thin film, and transparent electrode manufactured using same | |
| CN101955852A (en) | Cleaning solution for plasma etching residues | |
| CN105002564A (en) | Environment-friendly sapphire film deplating solution and using method thereof | |
| CN104614933A (en) | A cleaning method of a metal film forming mask | |
| CN104617018A (en) | Substrate processing device and substrate processing method | |
| CN102827707A (en) | Plasma etching residue cleaning fluid | |
| CN105762286A (en) | Methods for preparing perovskite thin film of inverse opal structure and corresponding solar cell | |
| TWI781168B (en) | Cleaning method and rinsing composition of mask for vacuum evaporation | |
| CN104021879A (en) | Preparation method for strong-adhesion-force carbon nanotube flexible transparent conductive thin film and adhesion force detection method | |
| CN107231753A (en) | A kind of golden method of the heavy nickel for improving plating leakage | |
| CN107282525B (en) | Cleaning process suitable for ceramic product | |
| CN108517494A (en) | A kind of optical vacuum coating machine inner cavity clean method | |
| CN102051283A (en) | Hydroxylamine-containing cleaning solution and use thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: Jeonbuk, South Korea Applicant after: Tongwoo Fine Chemicals Co., Ltd. Address before: Jeonbuk, South Korea Applicant before: East Friends FINE-CHEM Co., Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: DONG YOU FINE-CHEM TO: TONGWOO FINE CHEMICALS CO., LTD. |
|
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130619 |