KR101798293B1 - Composition for oxide semiconductor and method for manufacturing oxide semiconductor thin film/thin film transistor using the same - Google Patents

Composition for oxide semiconductor and method for manufacturing oxide semiconductor thin film/thin film transistor using the same Download PDF

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KR101798293B1
KR101798293B1 KR1020150138368A KR20150138368A KR101798293B1 KR 101798293 B1 KR101798293 B1 KR 101798293B1 KR 1020150138368 A KR1020150138368 A KR 1020150138368A KR 20150138368 A KR20150138368 A KR 20150138368A KR 101798293 B1 KR101798293 B1 KR 101798293B1
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acetylacetonate
oxide semiconductor
thin film
iii
semiconductor thin
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KR20170039352A (en
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김현재
김나은
김영규
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연세대학교 산학협력단
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)

Abstract

An oxide semiconductor composition for an oxide semiconductor thin film and a technique for manufacturing an oxide semiconductor thin film / thin film transistor using the oxide semiconductor composition are disclosed. The disclosed oxide semiconductor thin film manufacturing method includes: coating an oxide semiconductor composition including an acetylacetone-based oxide semiconductor precursor on a substrate to form an oxide semiconductor thin film; And patterning the oxide semiconductor thin film.

Description

TECHNICAL FIELD [0001] The present invention relates to an oxide semiconductor composition, and an oxide semiconductor thin film / thin film transistor using the oxide semiconductor composition and a method of manufacturing the same. BACKGROUND ART [0002]

The present invention relates to an oxide semiconductor composition and an oxide semiconductor thin film / thin film transistor manufacturing method using the oxide semiconductor composition, and more particularly, to an oxide semiconductor composition for an oxide semiconductor thin film and a method for manufacturing an oxide semiconductor thin film / thin film transistor using the oxide semiconductor composition.

In recent years, research on oxide semiconductors to replace silicon-based semiconductor devices has been widely carried out. Studies on single, binary and ternary compounds based on indium oxide (In2O3), zinc oxide (ZnO), gallium oxide (Ga2O3) and tin oxide (Sn2O3) have been reported. On the other hand, a liquid-based process instead of conventional vacuum deposition is being studied in terms of process.

Oxide semiconductors have the same amorphous phase compared to hydrogenated amorphous silicon, but exhibit very good mobility and are therefore suitable for high-definition liquid crystal displays (LCDs) and active organic light emitting diodes (AMOLED). In addition, the oxide semiconductor manufacturing technology using a liquid-based process has an advantage in that it is less expensive than a high-cost vacuum deposition method.

Generally, a thin film is formed in an electronic device manufacturing process and patterned into a desired shape by a photolithography process. In a typical photolithography process, a series of steps of coating a photosensitive material such as a photoresist on a thin film to be patterned, then exposing and developing light to form a photoresist pattern, and etching the thin film to be patterned using the thin film as an etching mask . The photoresist material exposed by the light is changed photochemically so that the portion exposed by the light and the portion not exposed by the light are chemically different from each other.

Therefore, either part of the two parts is selectively removed by a suitable developing solution, and the part not removed by the developing solution becomes a photoresist pattern.

The photoresist pattern must be removed through a process such as ashing, stripping, and the like. The ashing is to remove the photoresist pattern using an oxygen plasma in the plasma etching equipment, and the stripping is to remove the photoresist pattern at about 125 degrees centigrade using a mixed solution of sulfuric acid and oxidizing agent. It is required to remove the photoresist pattern as soon as possible without affecting the pattern characteristics formed thereunder.

Conventional photoresist processes involve many complicated steps, and strongly acidic solutions such as hydrofluoric acid, nitric acid, and oxalic acid used to etch oxide semiconductors have a negative environmental impact. Recently, a method of forming a thin film by a solution process by adding a photosensitive material without a photoresist or a separate etching process has been researched.

However, the method of forming a thin film pattern by adding a photosensitive material has the problem that the organic residue is included in the thin film pattern or the electronic device due to the addition of the photosensitive material, which is an organic material, and the characteristics of the device are deteriorated.

Korean Patent No. 10-1373195 is a related prior art document.

An oxide semiconductor composition for an oxide semiconductor thin film and an oxide semiconductor thin film / thin film transistor manufacturing method using the same are provided.

In particular, the present invention is to provide a method of manufacturing a thin film transistor without adding a photoresist or another photosensitive material.

According to an aspect of the present invention, there is provided an oxide semiconductor composition for an oxide semiconductor thin film, comprising: an acetylacetone-based oxide semiconductor precursor; And a solvent in which the oxide semiconductor precursor is dissolved.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming an oxide semiconductor thin film by coating an oxide semiconductor composition comprising an acetylacetone-based oxide semiconductor precursor on a substrate; And patterning the oxide semiconductor thin film.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: preparing an oxide semiconductor precursor based on an acetylacetone based on a kind of a thin film transistor; and a solvent determined according to a wavelength of ultraviolet light used for patterning; Applying an oxide semiconductor composition solution in which the oxide semiconductor precursor is dissolved in the solvent to a substrate to form an oxide semiconductor thin film; And patterning the oxide semiconductor thin film.

According to the present invention, by manufacturing an oxide semiconductor thin film or a thin film transistor without using a separate photoresist or a photosensitive material, the thin film pattern forming process can be simplified and the cost can be reduced accordingly.

Further, according to the present invention, since the organic residue does not occur due to the addition of the photosensitive material, the device characteristics can be improved and high reliability can be secured in a stress condition.

1 is a flowchart of a method of forming an oxide semiconductor thin film pattern by adding a photosensitive material.
FIG. 2 is a view showing a solution process according to the flow chart of FIG. 1; FIG.
3 is a view for explaining a method of manufacturing a thin film transistor according to an embodiment of the present invention.
4 is a view for explaining a method of manufacturing a thin film transistor according to a specific embodiment of the present invention.
5 is an optical microscope photograph of an IZO thin film transistor manufactured according to the present invention.
6 is an optical microscope photograph of an InOx thin film transistor.
7 is a view for explaining a transfer curve of an IZO thin film transistor manufactured according to the present invention.
8 and 9 are views for explaining the reliability of the IZO thin film transistor manufactured according to the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

The present invention proposes a method of manufacturing an oxide semiconductor thin film or a thin film transistor functioning as a channel layer by using an acetylacetone-based oxide semiconductor precursor without adding a photosensitive material. The oxide semiconductor composition containing an oxide semiconductor precursor based on acetylacetone may have a thin film pattern formed without adding a photoresistor or another photosensitive material because its chemical characteristics are changed by ultraviolet rays.

The oxide semiconductor precursor according to an embodiment of the present invention may include zinc acetylacetonate, aluminum acetylacetonate, copper (II) acetylacetonate, calcium acetylacetonate (acetylacetonate), calcium acetylacetonate, vanadyl acetylacetonate, iron (Ⅲ) acetylacetonate, iron (Ⅱ) acetylacetonate, lithium acetylacetonate, manganese (III) acetylacetonate, manganese (II) acetylacetonate, silver acetylacetonate, cobalt (III) acetylacetonate (cobalt (Ⅲ) acetylacetonate), cobalt (Ⅱ) acetylacetonate, zirconium (Ⅳ) acetylacetonate (zircon acetylacetonate, chromium (Ⅲ) acetylacetonate, nickel (Ⅱ) acetylacetonate, palladium (Ⅱ) acetylacetonate, ), Cadmium acetylacetonate, gallium (Ⅲ) acetylacetonate, indium (Ⅲ) acetylacetonate, platinum (Ⅱ) acetylacetonate, (II) acetylacetonate, yttrium acetylacetonate, iridium (III) acetylacetonate, rhodium (III) acetylacetonate, barium acetylacetonate barium acetylacetonate, ruthenium (III) acetylacetonate, yttrium (III) acetylacetonate, magnesium acetylacetonate, etylacetonate, cerium (III) acetylacetonate, vanadium (III) acetylacetonate, titanium diisopropoxide bis (acetylacetonate), and combinations thereof. have.

The oxide semiconductor precursor according to an embodiment of the present invention may include, but is not limited to, isopropanol, 2-methoxyethanol, dimethylformamide, ethanol, deionized water, The oxide semiconductor composition according to the present invention may be selected from the group consisting of methanol, acetylacetone, dimethylamineborane, acetonitrile, and combinations thereof. The oxide semiconductor composition according to the present invention may be selected from the group consisting of an acetylacetone-based oxide semiconductor precursor And a solvent in which the oxide semiconductor precursor is dissolved.

According to the present invention, by manufacturing the oxide semiconductor thin film and the thin film transistor based on the solution process without adding the photosensitive island material, the thin film pattern forming process can be simplified and the cost can be reduced accordingly. In addition, organic residues are not generated due to the addition of the photosensitive material, so that the device characteristics are improved and high reliability can be secured in a stress condition.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a flow chart of a method of forming an oxide semiconductor thin film pattern by adding a photosensitive material, and FIG. 2 is a view showing a solution process according to the flow chart of FIG.

Referring to FIGS. 1 and 2, a solution is synthesized using an oxide semiconductor precursor for thin film formation (S110), and a photosensitive material is added to the synthesized solution (S120). The solution to which the photosensitive material is added is applied to the substrate (S130) to form an oxide semiconductor thin film, and pre-annealing is performed (S140). After the patterned mask is placed on the substrate, ultraviolet light (UV) is irradiated (S150), and the oxide semiconductor thin film not irradiated with ultraviolet rays is removed through leaching (S160). The oxide semiconductor thin film irradiated with ultraviolet rays is not removed during the lithography process, and thus an oxide semiconductor thin film pattern can be formed.

Then, a thin film transistor can be manufactured through a post-annealing process (S170) and a source-drain deposition process (S180).

The thin film pattern forming method described in FIGS. 1 and 2 has an advantage that a thin film pattern can be formed without a photoresist by separately adding a photosensitive material. However, as described above, the disadvantage .

3 is a view for explaining a method of manufacturing an oxide semiconductor thin film and a thin film transistor according to an embodiment of the present invention.

Referring to FIG. 3, an oxide semiconductor composition including an acetylacetone-based oxide semiconductor precursor is applied to a substrate to form an oxide semiconductor thin film (S310). The oxide semiconductor composition may be applied to a substrate by screen printing, spin coating, dip coating, spraying, roll-to-roll or inkjet ink-jet method and the like can be used.

The oxide semiconductor precursor used in the oxide semiconductor composition may be determined depending on the kind of the thin film transistor. For example, indium (III) acetylacetonate and zinc acetylacetonate may be used in the manufacture of IZO thin film transistors, gallium (III) acetylacetonate, indium (III) acetylacetonate and zinc acetylacetonate may be used in the manufacture of IGZO thin film transistors.

The light absorption characteristics of the oxide semiconductor composition may be varied depending on the type of the solvent, and the solvent may be determined according to the wavelength of ultraviolet light used. That is, according to an embodiment, the method of manufacturing a thin film transistor according to the present invention further includes preparing an oxide semiconductor precursor based on an acetylacetone determined according to the type of the thin film transistor and a solvent determined according to the wavelength of ultraviolet light used for patterning can do.

The oxide semiconductor composition according to the present invention can be prepared by dissolving an acetylacetone-based oxide semiconductor precursor in a solvent. In one embodiment, the molar ratio of the oxide semiconductor precursor to the oxide semiconductor composition solution ranges from 1: 0.1 to 1: 1 An oxide semiconductor precursor may be included in the oxide semiconductor composition.

Then, the oxide semiconductor thin film is patterned (S320). In one embodiment, a thin film pattern can be formed by irradiating ultraviolet rays onto the oxide semiconductor thin film using a mask and removing the oxide semiconductor thin film not irradiated with ultraviolet rays. That is, a thin film pattern corresponding to the pattern of the mask can be formed, and the oxide semiconductor thin film irradiated with ultraviolet rays forms a thin film pattern.

As described above, the oxide semiconductor composition according to the present invention is a photosensitive material whose chemical characteristics are changed by ultraviolet rays, so that a thin film pattern can be formed by irradiation of ultraviolet rays without adding a separate photosensitive material.

On the other hand, before irradiating ultraviolet rays to the oxide semiconductor thin film, pre-heat treatment can be performed and can be performed for 1 to 200 seconds at a temperature range of from room temperature to 150 degrees. The solvent may be volatilized by the pre-heat treatment and the oxide semiconductor thin film may be in the form of a gel thin film.

As the mask for patterning the oxide semiconductor thin film, a metal mask, a quartz mask, a film mask or a halftone mask can be used, and ultraviolet rays having a wavelength of 200 to 450 nm can be emitted within a range of 1 second to 1 hour Lt; / RTI >

The oxide semiconductor thin film to which ultraviolet rays are not irradiated can be removed by using a lithiating solution. As the solution for lithography, any one of ethanol, methanol, isopropyl alcohol, propanol, 2-methoxyethanol, acetonitrile, acetone, Can be used. And the temperature of the lithiation solution can be determined in the range of room temperature to 90 degrees. The re-nicking may be performed in a period of 1 second to 5 minutes, and the re-nicking may be performed in any one of a spray type, a deep wash type, an ultrasonic washing type, and a bubble type.

After the thin film pattern is formed through the lithography process, a post-heat treatment may be performed, wherein the heat treatment temperature is 100 to 500 degrees Celsius, and the post-heat treatment may be performed within a range of 1 minute to 180 minutes.

After the thin film pattern is formed, a thin film transistor can be manufactured by forming a source-drain.

4 is a view for explaining a method of manufacturing a thin film transistor according to a specific embodiment of the present invention.

In Fig. 4, a manufacturing method for an indium zinc oxide (IZO) thin film transistor is described as an embodiment. 4, an oxide semiconductor composition solution in which an oxide semiconductor precursor indium (III) acetylacetonate (In (CHO₂) ₃) and zinc acetylacetonate (Zn (CHO₂) ₂) are dissolved in a 2-methoxyethanol solvent The case where it is used is described as an embodiment. At this time, the solution of the oxide semiconductor composition was 0.3M, and the mole ratio of indium and zinc (In: Zn) was 7: 1.

In step S410, the oxide semiconductor precursor is dissolved in a solvent to synthesize the oxide semiconductor composition solution. The oxide semiconductor composition solution was stirred for 1 hour at a speed of 300 rpm using a magnetic bar on a hot plate at a temperature of 70 ° C. The agitated solution is agitated for stabilization for 24 hours, and the aged solution is placed in a brown bottle with a high UV blocking effect.

In step S420, a substrate on which SiO2 is thermally grown on a P + -doped silicon (Si) substrate is prepared, and a thin film is formed by applying an oxide semiconductor composition solution. At this time, to remove organic substances and impurities on the surface of the substrate, ultrasonic cleaning was performed for 10 minutes each in the order of acetone and methanol, and then the substrate was blurred using a nitrogen gun. Subsequently, the substrate was subjected to a surface treatment for 15 minutes using a Deep UV (wavelength: 185 nm, 254 nm) ozone generator to remove the organic substances adsorbed during the thin film coating and to form hydrophilic surfaces by forming a large amount of OH groups on the surface . The solution is deposited on the substrate using a spin coater. The spin-coating conditions are 5 steps of 500 rpm for 10 seconds, 1500 rpm for 15 seconds, 3000 rpm for 30 seconds, 1500 rpm for 15 seconds, and 500 rpm for 10 seconds. At this time, the oxide semiconductor composition solution is syringe filter of 0.2 mu m, and impurities are filtered and applied to the substrate.

In step S430, the substrate coated on the 90 degree hot plate for three minutes at a temperature of 90 degrees is subjected to pre-heat treatment to remove the solvent. The oxide semiconductor thin film is gelated by the pre-heat treatment.

In step S440, exposure is performed for 15 minutes using exposure equipment (UV irradiation 365 nm, output 350 W, 25 W / cm 2) capable of irradiating ultraviolet rays of 365 nm wavelength. At this time, a hard contact is performed using a shadow mask in which a part where a pattern should remain, and the mask is removed after the exposure is finished.

In step S450, the substrate irradiated with ultraviolet rays is soaked in a 2-methoxyethanol leaching solution at a temperature of 60 degrees and leaching is performed for 1 minute. The thin film irradiated with ultraviolet light is left in the process of lithography, and the thin film not irradiated is removed from the substrate. Wash the substrate with deionized water for one minute after re-etching.

In step S460, the substrate is subjected to a post-heat treatment for 2 hours on a 250 degree hot plate.

In step S470, aluminum (Al) is deposited on the substrate after the post-annealing process by evaporator method using a shadow mask capable of forming a pattern having a channel length of 150 mu m and a channel width of 1000 mu m, The electrode is deposited to 2000 Å.

FIG. 5 is an optical microscope photograph of an IZO thin film transistor manufactured according to the present invention, FIG. 6 is an optical microscope photograph of an InOx thin film transistor, and FIG. 5 (b) is an optical microscope photograph of a thin film pattern of an IZO thin film transistor.

As shown in FIG. 5, it can be confirmed that the IZO thin film channel pattern is clearly formed on the substrate. Also, it can be confirmed that the remaining thin film except for the thin film channel pattern was cleanly removed by the etching process.

Also, as shown in FIG. 6, it can be seen that the InOx thin film pattern patterned to 10um or less (6.87um) is clearly formed on the substrate.

7 is a view for explaining the transfer curve of the IZO thin film transistor manufactured according to the present invention. The mobility (μ SAT ), the threshold voltage (V th ), the on / off ) And the SS Subthreshold Slope.

FIG. 7 (a) shows the transfer characteristics of the IZO thin film transistor manufactured by adding the photosensitive material described in FIGS. 1 and 2, and FIG. 7 (b) shows the transfer characteristics of the IZO thin film transistor manufactured according to the present invention .

The higher the mobility, the threshold voltage and the flicker rate (the current ratio of the on and off states of the transistor), and the smaller the threshold voltage tilt, the better the transfer characteristics. The transfer characteristics of the IZO thin film transistor manufactured according to the present invention are superior to those of the IZO thin film transistor prepared by adding the photosensitive material.

8 and 9 are views for explaining the reliability of the IZO thin film transistor manufactured according to the present invention.

FIG. 8 shows the results of PBS (Positive Bias Stress) measured without passivation (pssivation), and FIG. 9 shows PBS results measured after passivation to YO x . FIGS. 8 and 9 show the transfer characteristics of the IZO thin film transistor at 1 second, 10 seconds, 100 seconds, and 1000 seconds after the stress of the gate-source voltage of 20 V and the drain-source voltage of 10.1 V is applied to the IZO thin film transistor.

8 (a) and 9 (a) show PBS results of the IZO thin film transistor manufactured by adding the photosensitive material described in FIGS. 1 and 2, and FIGS. 8 (b) and 9 The results of the PBS of the IZO thin film transistor fabricated according to the invention are shown.

As shown in FIGS. 8 and 9, the threshold voltage variation of the IZO thin film transistor fabricated according to the present invention is smaller than the threshold voltage variation of the IZO thin film transistor fabricated by adding the photosensitive material. Therefore, it can be seen that the reliability of the IZO thin film transistor manufactured according to the present invention is higher than that of the IZO thin film transistor manufactured by adding the photosensitive material.

As described above, since the oxide semiconductor thin film and the thin film transistor manufacturing method according to the present invention do not add a photosensitive material, organic residues are not generated. Therefore, the device characteristics of the thin film transistor, The reliability can be improved.

As described above, the present invention has been described with reference to particular embodiments, such as specific elements, and specific embodiments and drawings. However, it should be understood that the present invention is not limited to the above- And various modifications and changes may be made thereto by those skilled in the art to which the present invention pertains. Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .

Claims (10)

delete delete delete delete Preparing a solvent determined according to a wavelength of an ultraviolet ray used for patterning an oxide semiconductor precursor based on acetylacetone and an oxide semiconductor thin film;
Applying an oxide semiconductor composition solution in which the oxide semiconductor precursor is dissolved in the solvent to a substrate to form an oxide semiconductor thin film; And
And patterning the oxide semiconductor thin film,
The oxide semiconductor composition is a photosensitive material whose chemical characteristics are changed by the ultraviolet rays,
The step of patterning the oxide semiconductor thin film
Irradiating the oxide semiconductor thin film with ultraviolet light using a patterned mask; And
Removing the oxide semiconductor thin film not irradiated with ultraviolet rays to form a thin film pattern corresponding to the pattern of the mask
Wherein the oxide semiconductor thin film is formed on the surface of the oxide semiconductor film.
6. The method of claim 5,
The oxide semiconductor precursor
Zinc acetylacetonate, aluminum acetylacetonate, copper (II) acetylacetonate, calcium acetylacetonate, vanadyl acetylacetonate, ), Iron (III) acetylacetonate, iron (II) acetylacetonate, lithium acetylacetonate, manganese (III) acetylacetonate (manganese (Ⅲ) acetylacetonate, manganese (Ⅱ) acetylacetonate, silver acetylacetonate, cobalt (Ⅲ) acetylacetonate, cobalt (Ⅱ) acetylacetonate, Cobalt (II) acetylacetonate, zirconium (IV) acetylacetonate, chromium (III) acetylacetonate (chromiu m (III) acetylacetonate, nickel (II) acetylacetonate, palladium (II) acetylacetonate, cadmium acetylacetonate, gallium (III) (III) acetylacetonate, indium (III) acetylacetonate, platinum (II) acetylacetonate, yttrium acetylacetonate, Iridium (III) acetylacetonate, rhodium (III) acetylacetonate, barium acetylacetonate, ruthenium (III) acetylacetonate (III) acetylacetonate, ) acetylacetonate, yttrium (Ⅲ) acetylacetonate, magnesium acetylacetonate, cerium (Ⅲ) acetyl acetonate acetanate, vanadium (III) acetylacetonate, titanium diisopropoxide bis (acetylacetonate), and combinations thereof.
Oxide semiconductor thin film.
The method according to claim 6,
The oxide semiconductor precursor
Isopropyl alcohol, 2-methoxyethanol, dimethylformamide, ethanol, deionized water, methanol, acetylacetone, dimethylamine borane, dimethylamineborane, acetonitrile, and combinations thereof.
Oxide semiconductor thin film.
delete delete In the method of manufacturing a thin film transistor,
Preparing an oxide semiconductor precursor based on an acetylacetone based on the type of the thin film transistor and a solvent determined according to the wavelength of ultraviolet light used for patterning;
Applying an oxide semiconductor composition solution in which the oxide semiconductor precursor is dissolved in the solvent to a substrate to form an oxide semiconductor thin film; And
And patterning the oxide semiconductor thin film,
The oxide semiconductor composition is a photosensitive material whose chemical characteristics are changed by the ultraviolet rays,
The step of patterning the oxide semiconductor thin film
Irradiating the oxide semiconductor thin film with ultraviolet light using a patterned mask; And
Removing the oxide semiconductor thin film not irradiated with ultraviolet rays to form a thin film pattern corresponding to the pattern of the mask
Gt; < / RTI >
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US20100210069A1 (en) 2009-02-13 2010-08-19 Seon Jong-Baek Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition
CN103779425A (en) 2014-01-27 2014-05-07 上海交通大学 Preparing method for indium gallium zinc oxide semi-conductor film
KR101415748B1 (en) 2011-06-09 2014-08-06 연세대학교 산학협력단 A composition for oxide semiconductor, preparation methods thereof, methods of forming the oxide semiconductor thin film, methods of fomring an electrical device and an electrical device formed thereby

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Publication number Priority date Publication date Assignee Title
US20100210069A1 (en) 2009-02-13 2010-08-19 Seon Jong-Baek Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition
KR101415748B1 (en) 2011-06-09 2014-08-06 연세대학교 산학협력단 A composition for oxide semiconductor, preparation methods thereof, methods of forming the oxide semiconductor thin film, methods of fomring an electrical device and an electrical device formed thereby
CN103779425A (en) 2014-01-27 2014-05-07 上海交通大学 Preparing method for indium gallium zinc oxide semi-conductor film

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