TW201305367A - Method and device for the deposition of OLEDs - Google Patents

Method and device for the deposition of OLEDs Download PDF

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TW201305367A
TW201305367A TW101120868A TW101120868A TW201305367A TW 201305367 A TW201305367 A TW 201305367A TW 101120868 A TW101120868 A TW 101120868A TW 101120868 A TW101120868 A TW 101120868A TW 201305367 A TW201305367 A TW 201305367A
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evaporation
evaporator
starting material
evaporation element
suspended particles
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TW101120868A
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TWI583809B (en
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Michael Long
Markus Gersdorff
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Aixtron Se
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Abstract

The invention first relates to a method for depositing an organic starting material as a layer on a substrate (18), wherein the organic starting material is introduced in the form of suspended particles in a carrier gas flow, the aerosol thus created is supplied as a predetermined mass flow of the organic material to an evaporator (5), which evaporator (5) comprises an evaporation body (6 - 10) which has a large surface and is heated to an evaporation temperature at which the suspended particles entering the vicinity of, or making contact with, the surface of the evaporation body (6 - 10) evaporate, the steam of the carrier gas flow thus created is introduced into a process chamber (17) where it condenses on the surface of a substrate (18), thus forming the layer. In order to make the steam inflow to the process chamber more uniform, according to the invention the mass flow of suspended particles to the evaporator (5) is greater than the evaporation rate of the suspended particles in the evaporator (5) such as to create a carrier gas flow saturated with the steam of the evaporated organic starting material to the process chamber, at least during one phase of the deposition process, in particular during a starting phase of the deposition process. The invention further relates to a device for depositing an organic starting material as a layer on a substrate.

Description

用以沉積OLED的方法與裝置 Method and apparatus for depositing OLED

本發明係有關於一種將有機起始材料成層沉積於基板之方法，其中，將該有機起始材料以懸浮粒子形式送入載氣流，將由此產生的氣膠作為一定質量流量之該有機材料送往蒸發器，該蒸發器具有表面較大之蒸發元件，將該蒸發元件加熱至蒸發溫度，靠近該蒸發元件表面或與該蒸發元件表面接觸的懸浮粒子在此蒸發溫度下蒸發，由此產生的蒸氣由該載氣流送入處理室，該蒸氣在該處理室內於基板表面發生冷凝並形成該層。 The invention relates to a method for depositing an organic starting material on a substrate, wherein the organic starting material is sent into a carrier gas stream in the form of suspended particles, and the resulting gas glue is sent as a certain mass flow of the organic material. To the evaporator, the evaporator has a larger evaporation element, the evaporation element is heated to the evaporation temperature, and the suspended particles near the surface of the evaporation element or in contact with the surface of the evaporation element are evaporated at the evaporation temperature, thereby generating The vapor is sent to the processing chamber by the carrier gas stream, which vapor condenses on the surface of the substrate in the processing chamber to form the layer.

本發明另亦有關於一種用於將有機起始材料成層沉積於基板之裝置，包括氣膠發生器及處理室，該氣膠發生器用於產生該起始材料之一定質量流量的懸浮粒子，該等懸浮粒子由載氣流送往蒸發器，其中，該蒸發器具有開孔蒸發元件，該蒸發元件包含實施為盲孔之進入通道且可被加熱至蒸發溫度以蒸發該等懸浮粒子，該處理室用於容置該基板，該蒸發器所產生的蒸氣由蒸氣輸送管送入該處理室。 The invention further relates to a device for depositing an organic starting material on a substrate, comprising a gas gel generator and a processing chamber, the gas gel generator for generating a certain mass flow of suspended particles of the starting material, The suspended particles are sent to the evaporator by a carrier gas stream, wherein the evaporator has an open-cell evaporation element comprising an inlet channel implemented as a blind hole and heated to an evaporation temperature to evaporate the suspended particles, the processing chamber For accommodating the substrate, the vapor generated by the evaporator is sent to the processing chamber by the vapor delivery tube.

同類型方法及同類型裝置請參閱US 7,238,389。用氣膠發生器將粉末狀固體送入載氣流。在此過程中所產生的氣膠粒子以懸浮粒子形式被該載氣流送往蒸發器。該蒸發器由固態泡沫構成，將該固態泡沫加熱至蒸發溫度。懸浮粒子與固態 泡沫的孔壁發生表面接觸後得到蒸發熱，遂變成蒸氣。用載氣流將由此產生的蒸氣送入設有基板的處理室並用該有機起始材料為該基板進行塗佈。該案中所描述且同樣為本發明方法及本發明裝置所用之有機起始材料為可用來製造OLED的有機發光材料，詳情例如請參閱US 4,769,292及US 4,885,211。 For the same type of method and the same type of device, please refer to US 7,238,389. The powdered solid is fed to the carrier gas stream using a gas gel generator. The aerosol particles produced during this process are sent to the evaporator by the carrier gas stream in the form of suspended particles. The evaporator consists of a solid foam that is heated to the evaporation temperature. Suspended particles and solid state The surface of the pores of the foam is subjected to surface contact to obtain heat of evaporation, which turns into a vapor. The vapor thus generated is sent to a processing chamber provided with a substrate by a carrier gas stream and coated with the organic starting material. The organic starting materials described in the present invention and which are also used in the process of the invention and in the device of the invention are organic luminescent materials which can be used in the manufacture of OLEDs. For example, see US 4,769,292 and US 4,885,211.

US 2006/0115585 A1描述一種用於沉積有機層於基板之裝置，該裝置具有加熱裝置，用於加熱有機材料以在載氣中產生氣膠。該固態氣膠由一具有微孔的噴嘴輸送，此噴嘴具有可為有機粒子加熱之脈衝加熱裝置。該些微孔直徑最高達100 μm。 US 2006/0115585 A1 describes a device for depositing an organic layer on a substrate, the device having heating means for heating the organic material to produce a gas gel in the carrier gas. The solid gas gel is delivered by a nozzle having a microporous nozzle having a pulse heating device that heats the organic particles. The micropores are up to 100 μm in diameter.

DE 10057491 A1描述一種向高溫氣體體積注射滴狀物以產生氣膠並透過吸熱蒸發該滴狀物之裝置。 DE 100 57 491 A1 describes a device for injecting drops into a high temperature gas volume to produce a gas gel and evaporating the drops by endothermic.

WO 2006/100058描述一種可使非氣態起始材料轉成氣相之加熱裝置，其加熱元件上設若干具有內表面的空腔。 WO 2006/100058 describes a heating device for converting a non-gaseous starting material into a gas phase, the heating element of which is provided with a plurality of cavities having an inner surface.

US 2006/0169201 A1所描述的同類型裝置包括多個沿流向前後佈置的蒸發元件，該等蒸發元件具有沿流向分佈且截面呈蜂窩狀之通道。載氣流攜帶蒸發粒子穿過該些通道。由於該等截面呈蜂窩狀的通道為直線分佈，許多粒子會在未與通道壁部接觸之情況下穿透蒸發元件。 The same type of device described in US 2006/0169201 A1 comprises a plurality of evaporating elements arranged in a forward and backward flow, the evaporating elements having channels distributed in a flow direction and having a honeycomb cross section. The carrier gas carries the evaporating particles through the channels. Since the honeycomb channels are linearly distributed, many of the particles penetrate the evaporation element without being in contact with the channel walls.

用特別由鎢、錸、鉭、鈮、鉬或碳或鍍層材料構成之固態泡沫蒸發有機起始材料的方法另請參閱US 2009/0039175 A1或US 6,037,241。此處主要以通電方式將固態泡沫加熱至蒸發溫度，使有機起始材料在該蒸發溫度下蒸發。 A method of evaporating an organic starting material with a solid foam consisting in particular of tungsten, tantalum, niobium, tantalum, molybdenum or carbon or a coating material, see also US 2009/0039175 A1 or US 6,037,241. Here, the solid foam is heated to the evaporation temperature mainly by energization, and the organic starting material is evaporated at the evaporation temperature.

DE 10 2006 026 576 A1亦揭露一種固態蒸發器，其中用超音波激勵器以形成粉末渦流之方式產生氣膠。使大量待蒸發起始材料持久保持蒸發溫度的固態蒸發器雖能提供連續之蒸發率。但待蒸發有機起始材料極有可能在高溫下分解。為解決此問題，US 2009/0061090 A1及US 2010/0015324 A1建議在蒸發器內設置可再裝蒸發容器。 DE 10 2006 026 576 A1 also discloses a solid state evaporator in which a gas gutta is produced by means of an ultrasonic actuator in the form of a powder vortex. A solid state evaporator that maintains a large amount of evaporation starting material for a long time to maintain the evaporation temperature provides a continuous evaporation rate. However, it is highly probable that the organic starting material to be evaporated will decompose at high temperatures. In order to solve this problem, US 2009/0061090 A1 and US 2010/0015324 A1 propose to provide a refillable evaporation container in the evaporator.

US 7,288,286 B2描述一種用於將儲存於儲存容器之粉末狀有機起始材料送入氣流的螺旋輸送機，由該氣流將粉末狀懸浮粒子送往蒸發器。 No. 7,288,286 B2 describes a screw conveyor for feeding a powdered organic starting material stored in a storage container into a gas stream, from which the powdered suspended particles are sent to an evaporator.

US 5,820,678描述另一種用以產生粉末狀懸浮粒子的方法。其中用刷輪自粉末壓縮而形成的固體上移除微米級粒徑之粉末粒子。用氣流將該些粉末粒子送往蒸發器。 Another method for producing powdered suspended particles is described in US 5,820,678. The powder particles of the micron-sized particle size are removed from the solid formed by the compression of the powder by the brush wheel. The powder particles are sent to the evaporator by a gas stream.

另有習知氣膠發生器可將用於MOCVD製程之液態有機起始材料以滴狀物形式送入載氣流。相關裝置可參閱US 2005/0227004、US 2006/0115585及US 5,204,314。傳統MOCVD所用起始材料在室溫或較高溫度下通常呈液態，製造OLED所用之有機起始材料在200℃以下則一律為固態。 Another conventional gas gel generator can feed the liquid organic starting material for the MOCVD process into the carrier gas stream as a drop. Related devices can be found in US 2005/0227004, US 2006/0115585 and US 5,204,314. The starting materials used in conventional MOCVD are usually liquid at room temperature or higher, and the organic starting materials used in the manufacture of OLEDs are all solid at temperatures below 200 °C.

習知氣膠發生器的蒸氣產生率與懸浮粒子產生率之間存在一定程度之關聯。舉例而言，若將毛刷裝置用作氣膠發生器，用可動(尤指旋轉)毛刷自粉餅上移除粒子，則時間性的 氣膠產生率與毛刷設計有關。另有部分習知之氣膠發生器具有可將起始材料噴入載氣流的輸送裝置，其輸送效率會隨時間發生波動。 There is a certain degree of correlation between the vapor generation rate of conventional gas gel generators and the rate of generation of suspended particles. For example, if the brush device is used as a gas gel generator, the movable (especially rotating) brush is used to remove particles from the powder, and the time is The rate of gas gel production is related to the brush design. In addition, some conventional gas gel generators have a conveying device capable of injecting a starting material into a carrier gas flow, and the conveying efficiency fluctuates with time.

若所用起始材料呈液態，則可使用噴嘴來產生氣膠。然而此時亦無法從根本上避免氣膠產生率之時間性波動。 If the starting material used is in a liquid state, a nozzle can be used to create a gas gel. However, at this time, it is impossible to fundamentally avoid the temporal fluctuation of the gas gel production rate.

本發明之目的在於提供若干能使處理室之蒸氣輸送得到均勻化的措施。 It is an object of the present invention to provide a number of means for homogenizing the vapor transport of a processing chamber.

如申請專利範圍所述之本發明為可達成該目的之解決方案。 The invention as described in the scope of the patent application is a solution to achieve this object.

本發明首先提出如下主要方案：所產生的由載氣流自蒸氣發生器送往處理室之蒸氣具有飽和蒸氣壓力。為此需採取相應措施，以便在整個沉積製程期間使蒸發器內皆存在過量之未蒸發起始材料。為了產生並向處理室輸送含有已蒸發有機起始材料之飽和蒸氣的載氣流，需在沉積製程的至少一階段(較佳開始階段)內使流向蒸發器之有機起始材料的質量流量(即，每單位時間向蒸發器輸送的懸浮粒子質量)大於蒸發率(即，每單位時間在蒸發器內轉變成蒸氣之起始材料的質量)。由此，蒸發器中會在一富集階段內富集一未蒸發有機起始材料之緩衝質量。此富集現象較佳發生於用作蒸發元件之固態泡沫的空腔內。為此需將一孔徑明顯大於該等懸浮粒子之粒度的開孔泡沫體用作蒸發元件。懸浮粒子直徑通常約 為100 μm。孔隙開口寬度平均約為1 mm。孔隙寬度亦可處於0.5 mm至3 mm範圍內。孔隙之截面面積較佳應大於1 mm2。孔隙不呈直線分別，彎曲程度極大，以致載氣流穿過孔隙時多番轉向，從而使其所攜帶之粒子與孔壁發生碰撞。所用固態泡沫之孔隙體積可占其總體積90%以上。較佳在以不同輸送率為蒸氣發生器提供懸浮粒子的階段蒸發氣膠。富集階段乃是為蒸發器所提供之有機起始材料質量大於該蒸發器在相同時間內所蒸發之質量的階段。由此將在該蒸發元件的孔隙內部形成上述緩衝質量。在富集階段之後的耗竭階段，蒸發器的有機起始材料輸送率減小，遂使提供給蒸發器的懸浮粒子少於該蒸發器在相同時間內所蒸發之材料。其結果為該緩衝質量在耗竭階段期間變小。為確保在整個沉積製程期間，該載氣流離開蒸發器時皆含有飽和蒸氣，需在該緩衝質量被耗盡之前以切換至富集階段(即，提高材料輸送率)之方式結束該耗竭階段。 The present invention first proposes a primary solution in which the vapor produced by the carrier gas stream from the steam generator to the processing chamber has a saturated vapor pressure. Corresponding measures are required for this to allow excess unvaporized starting material to be present in the evaporator throughout the deposition process. In order to generate and deliver a carrier gas stream containing saturated vapor of vaporized organic starting material to the processing chamber, the mass flow rate of the organic starting material flowing to the evaporator is required during at least one stage (preferred start phase) of the deposition process (ie, The mass of suspended particles delivered to the evaporator per unit time is greater than the evaporation rate (ie, the mass of the starting material that is converted to vapor in the evaporator per unit time). Thus, the buffer mass of an unvaporized organic starting material is enriched in the evaporator during an enrichment phase. This enrichment phenomenon preferably occurs in the cavity of the solid foam used as the evaporation element. For this purpose, an open-cell foam having a pore size significantly larger than the particle size of the suspended particles is used as the evaporation element. The suspended particles are usually about 100 μm in diameter. The aperture opening width is on average about 1 mm. The pore width can also be in the range of 0.5 mm to 3 mm. The cross-sectional area of the pores should preferably be greater than 1 mm 2 . The pores are not in a straight line and are so curved that the carrier gas flows through the pores more often, causing the particles it carries to collide with the walls of the pores. The solid foam used may have a pore volume of more than 90% of its total volume. It is preferred to evaporate the gas gel at a stage where the vaporizer is supplied with suspended particles at different delivery rates. The enrichment phase is the stage in which the mass of the organic starting material provided for the evaporator is greater than the mass of the evaporator evaporating at the same time. Thereby the above-mentioned buffer quality is formed inside the pores of the evaporation element. During the depletion phase after the enrichment phase, the organic starting material delivery rate of the evaporator is reduced, so that the suspended particles supplied to the evaporator are less than the material evaporated by the evaporator at the same time. The result is that the buffer quality becomes smaller during the depletion phase. To ensure that the carrier gas stream contains saturated vapor as it leaves the evaporator throughout the deposition process, the depletion phase is terminated by switching to the enrichment phase (ie, increasing the material delivery rate) before the buffer mass is exhausted.

本發明之裝置可具有一懸浮粒子產生率隨時間變化的氣膠發生器。懸浮粒子在此可呈粉末狀或液態。該氣膠發生器具有用於儲存該有機起始材料的儲存容器。該氣膠發生器另具有一可對懸浮粒子產生率施加影響的定量器。根據本發明之改良方案，該蒸發器具有複式蒸發元件。根據本發明，先前技術如US 2009/0039175 A1中設於多孔蒸發元件內的習知進入通道由第一蒸發元件之通孔構成。可設置一或多個該 第一蒸發元件並使其前後成一長排佈置。該通孔之其中一末端由第二蒸發元件封閉，該第二蒸發元件與該第一蒸發元件具有基本相同之特性。藉此防止未蒸發懸浮粒子穿透蒸發器。氣流攜懸浮粒子進入進入通道後可穿透該進入通道之壁部而進入第一蒸發元件之多孔內腔。一部分氣流則可穿過進入通道底部而進入第二蒸發元件。此二蒸發元件較佳沿流向前後佈置，使得氣體離開第一蒸發元件後必然會穿過第二蒸發元件。該第二蒸發元件可採用複式設計。由此形成多個較佳佔據該蒸發器之整個截面面積的第二蒸發元件。該較佳設置多個之第二蒸發元件可沿流向與一第三蒸發元件連接，該第三蒸發元件與其他蒸發元件具有基本相同之材料特性。該第三蒸發元件可採用與該第一蒸發元件相同之設計，由此形成一排出通道。該第三蒸發元件亦可採用複式設計。第一及第三蒸發元件皆具有一通孔。該等通孔可相互對準。該等通孔可具有相同直徑。該等通孔亦可具有不同直徑。亦即，該等通孔在蒸發元件內部亦可呈階梯狀錯開佈置。此外，該等蒸發元件亦可在蒸發器內採用在進入方向及排出方向上皆形成一封閉之內部空腔之佈置方式。此外，其中一蒸發元件可僅延伸孔徑量級之長度，故而該蒸發元件起擴散器作用。該排出通道較佳由該第三蒸發元件的通孔構成。該排出通道之底部由該第二蒸發元件構成。在此情況下，氣體穿過該一體式或兩分式之第二蒸發元件後可部分進入第三蒸發元件 的孔隙或者可部分進入排出通道。從流向看在第三蒸發元件後面設有一自由區域，該自由區域截面視情況可減小，且該自由區域與一蒸氣輸送管連通，該載氣攜該有機起始材料之蒸氣經該蒸氣輸送管進入處理室。該蒸氣輸送管與一呈蓮蓬頭狀的氣體分佈器連通。該氣體分佈器之出氣面指向一基座，待塗佈基板平放於此基座上。該出氣面上呈篩網狀設有多個出氣口，用於輸送蒸氣的載氣流經該等出氣口進入處理室。該基座較佳經冷卻處理，以方便蒸氣在基板上冷凝。該製程在介於0.1 mbar與100 mbar，較佳介於0.1 mbar與10 mbar之總壓下進行。該處理室與真空泵連接以產生此負壓。由固態泡沫構成的蒸發元件以被過量供應的氣膠不會穿透該等蒸發元件之方式佈置在蒸發器殼體內。該等氣膠單位在孔隙表面運動並儲存於孔隙表面。藉此確保：即使在蒸發元件下游形成飽和蒸氣壓力之情況下，下游氣流中亦不存在懸浮粒子。為了將蒸發元件加熱至例如介於300℃與400℃之間的蒸發溫度，蒸發器殼體可被一加熱裝置包圍。該或該等蒸發元件較佳由導電材料構成，如此便可為蒸發元件施加為其加熱的電流。蒸發率與蒸發溫度之間為非線性關係，因而設有可使得蒸發元件保持穩定溫度的調溫裝置。根據一種技術方案，不論該開孔泡沫體係用類玻璃碳、金屬、陶瓷、玻璃或石英製成抑或經塗佈處理，其孔壁表面皆塗有強反射材料(尤指金)。 The apparatus of the present invention can have a gas gel generator having a suspended particle generation rate that varies with time. The suspended particles can here be in the form of a powder or a liquid. The gas gel generator has a storage container for storing the organic starting material. The gas gel generator additionally has a doser that can affect the rate of generation of suspended particles. According to a further development of the invention, the evaporator has a double evaporation element. According to the invention, the prior art inlet channel provided in the porous evaporation element in the prior art, such as in US 2009/0039175 A1, consists of a through hole of the first evaporation element. One or more of this can be set The first evaporation element is arranged in a long row before and after it. One end of the through hole is closed by a second evaporation element, and the second evaporation element has substantially the same characteristics as the first evaporation element. This prevents unvaporized suspended particles from penetrating the evaporator. After the airflow carries the suspended particles into the inlet passage, it can penetrate the wall of the inlet passage and enter the porous inner cavity of the first evaporation element. A portion of the gas stream can pass through the bottom of the inlet channel into the second evaporation element. The two evaporation elements are preferably arranged forward and backward along the flow such that the gas will necessarily pass through the second evaporation element after leaving the first evaporation element. The second evaporation element can be of a duplex design. Thereby a plurality of second evaporation elements which preferably occupy the entire cross-sectional area of the evaporator are formed. The preferably plurality of second evaporating elements can be coupled to a third evaporating element in a flow direction, the third evaporating element having substantially the same material characteristics as the other evaporating elements. The third evaporation element can be of the same design as the first evaporation element, thereby forming a discharge passage. The third evaporation element can also be of a duplex design. The first and third evaporation elements each have a through hole. The through holes can be aligned with each other. The through holes may have the same diameter. The through holes may also have different diameters. That is, the through holes may also be arranged in a stepped manner inside the evaporation element. In addition, the evaporating elements may also be arranged in the evaporator to form a closed internal cavity in both the direction of entry and the direction of discharge. Furthermore, one of the evaporation elements can extend only the length of the aperture size, so that the evaporation element acts as a diffuser. The discharge passage preferably consists of a through hole of the third evaporation element. The bottom of the discharge passage is constituted by the second evaporation element. In this case, the gas may partially enter the third evaporation element after passing through the integral or two-part second evaporation element. The pores may either partially enter the discharge passage. Viewed from the flow direction, a free zone is provided behind the third evaporation element, the free zone cross section being reduced as appropriate, and the free zone is in communication with a vapor delivery tube through which the carrier gas carries the vapor of the organic starting material. The tube enters the processing chamber. The vapor delivery tube is in communication with a showerhead-like gas distributor. The gas outlet surface of the gas distributor is directed to a susceptor, and the substrate to be coated is laid flat on the susceptor. The outlet surface is provided with a plurality of air outlets in a mesh shape, and the carrier gas for conveying the steam enters the processing chamber through the air outlets. The susceptor is preferably cooled to facilitate vapor condensation on the substrate. The process is carried out at a total pressure of between 0.1 mbar and 100 mbar, preferably between 0.1 mbar and 10 mbar. The processing chamber is coupled to a vacuum pump to create this negative pressure. The evaporation element consisting of solid foam is arranged in the evaporator housing in such a way that the excess supplied gas glue does not penetrate the evaporation elements. The gas gel units move on the surface of the pores and are stored on the surface of the pores. This ensures that no suspended particles are present in the downstream gas stream even if a saturated vapor pressure is formed downstream of the evaporation element. In order to heat the evaporation element to, for example, an evaporation temperature between 300 ° C and 400 ° C, the evaporator housing can be surrounded by a heating device. The or evaporating elements are preferably constructed of a conductive material such that the evaporating element applies a current that is heated thereto. There is a non-linear relationship between the evaporation rate and the evaporation temperature, and thus a temperature adjustment device is provided which allows the evaporation element to maintain a stable temperature. According to one technical solution, regardless of whether the open-cell foam system is made of glassy carbon, metal, ceramic, glass or quartz, or coated, the surface of the pore wall is coated with a strong reflective material (especially gold).

用本發明裝置可沉積如前述US 7,238,389 B2及前述其他文獻所描述的層或層結構。詳情請參閱該些公開案所揭露之內容。 The layer or layer structure as described in the aforementioned US 7,238,389 B2 and other aforementioned documents can be deposited by the apparatus of the present invention. Please refer to the contents disclosed in these publications for details.

下文將參照附圖對本發明之實施例進行說明。 Embodiments of the present invention will be described below with reference to the accompanying drawings.

來自圖中未繪示氣源的惰性載氣如氮氣、氫氣或稀有氣體由圖中同樣未繪示之質量流量調節器送入載氣輸送管1。可將該載氣輸送管加熱，以便被加熱載氣經載氣輸送管進入氣膠發生器3。 An inert carrier gas such as nitrogen, hydrogen or a rare gas from a gas source not shown in the drawing is fed into the carrier gas delivery pipe 1 by a mass flow regulator not shown. The carrier gas delivery tube can be heated so that the heated carrier gas enters the gas gel generator 3 via the carrier gas delivery tube.

將有機起始材料儲存於儲存容器2。該起始材料為一施加電壓後會發光的有機發光材料，用以在基板18上沉積發光層。 The organic starting material is stored in the storage container 2. The starting material is an organic luminescent material that emits light after application of a voltage to deposit a luminescent layer on the substrate 18.

氣膠發生器3可為如US 7,501,152 B2或US 7,288,285 B2中所描述的刷輪式噴霧器或螺旋輸送裝置。藉該氣膠發生器可將粉末組分以懸浮粒子形式送入載氣流。向載氣流輸送懸浮粒子之時間性質量輸送率(即，氣膠產生率)會發生變化。 The gas gel generator 3 can be a brush wheel sprayer or a screw conveyor as described in US 7,501,152 B2 or US 7,288,285 B2. The powder component can be used to deliver the powder component as a suspended particle to the carrier gas stream. The temporal mass transfer rate (i.e., the rate of gas gel production) of the suspended particles delivered to the carrier gas stream changes.

該氣膠發生器經氣膠輸送管4與蒸發器5連接。載氣流經由該氣膠輸送管將懸浮粒子送入蒸發器5。 The gas gel generator is connected to the evaporator 5 via a gas supply pipe 4. The carrier gas stream sends the suspended particles to the evaporator 5 via the gas gel transfer pipe.

圖1至圖3所示之蒸發器5具有殼體11及包圍殼體11之加熱裝置12。該殼體內設由固態泡沫構成的複式蒸發元件6-10。該固態泡沫由加熱裝置12加熱至蒸發溫度，以便有機懸浮粒子與固態泡沫表面接觸後蒸發。 The evaporator 5 shown in FIGS. 1 to 3 has a housing 11 and a heating device 12 surrounding the housing 11. The housing is provided with a double evaporation element 6-10 made of solid foam. The solid foam is heated by the heating device 12 to an evaporation temperature so that the organic suspended particles come into contact with the surface of the solid foam and evaporate.

由此產生的蒸氣由載氣流經蒸氣輸送管13送入反應器殼體15。為了防止蒸氣在蒸氣輸送管13的壁部及佈置於反應器殼體15內之氣體分佈器16的壁部發生冷凝，須為氣體分佈器16及蒸氣輸送管13加熱。蒸氣輸送管13例如可具有熱套14。 The vapor thus generated is sent from the carrier gas stream through the vapor delivery pipe 13 to the reactor casing 15. In order to prevent vapor from condensing in the wall portion of the vapor delivery pipe 13 and the wall portion of the gas distributor 16 disposed in the reactor casing 15, the gas distributor 16 and the vapor delivery pipe 13 must be heated. The vapor delivery tube 13 can have, for example, a heat jacket 14.

佈置於反應器殼體15內部的氣體分佈器16呈蓮蓬頭狀。該氣體分佈器為一片狀空心體，包含指向處理室17之出氣面，此出氣面具有多個呈篩網狀佈置之出氣口，用於輸送蒸氣的載氣流經該等出氣口進入處理室17。 The gas distributor 16 disposed inside the reactor housing 15 has a showerhead shape. The gas distributor is a one-piece hollow body, and includes an outlet surface directed to the processing chamber 17, the outlet surface having a plurality of outlet openings arranged in a mesh shape, and a carrier gas for conveying the vapor enters the processing chamber through the outlet ports. 17.

氣體分佈器16之出氣面構成處理室17之頂部，基座19則構成處理室17之底部，待塗佈基板18平放於該基座指向氣體分佈器16的表面。 The gas outlet surface of the gas distributor 16 forms the top of the processing chamber 17, and the susceptor 19 constitutes the bottom of the processing chamber 17, and the substrate 18 to be coated is placed flat on the surface of the susceptor directed to the gas distributor 16.

基座19具有可將該基座表面冷卻之冷卻裝置(未繪示)，藉此使基板18保持能使該有機起始材料的蒸氣在基板表面發生冷凝之溫度。 The susceptor 19 has a cooling device (not shown) that cools the surface of the susceptor, thereby maintaining the substrate 18 at a temperature at which vapor of the organic starting material can condense on the surface of the substrate.

附圖未對閥門及用於沖洗處理室的其他氣體管道進行圖示。而用以使處理室17及蒸發器5之蒸發室保持低壓的真空泵20亦僅作了簡單示意。 The figures do not illustrate the valves and other gas lines used to flush the processing chamber. The vacuum pump 20 for keeping the evaporation chambers of the processing chamber 17 and the evaporator 5 at a low pressure is also simply illustrated.

在圖4僅以截面圖示出之方案中，佈置於蒸發器5內的蒸發元件6-10由導電材料構成。該材料為一開孔固態泡沫，其孔隙體積約占總體積97%。該些蒸發元件具有電接點21、22，藉此可分別為蒸發元件6-10施加用以將蒸發元件6-10 加熱至蒸發溫度的電流。蒸發元件6-10可由石墨或金屬構成。倘若該等蒸發元件由不導電材料如陶瓷構成，則用圖1至圖3所示之熱套12為蒸發元件6-10加熱，該熱套將蒸發器5之管型殼體包圍。 In the solution shown in cross section in Fig. 4, the evaporation elements 6-10 arranged in the evaporator 5 are composed of a conductive material. The material is an open cell solid foam having a pore volume of about 97% of the total volume. The evaporating elements have electrical contacts 21, 22 whereby they can be applied to the evaporating elements 6-10, respectively, to evaporate the elements 6-10 A current that is heated to the evaporation temperature. The evaporation element 6-10 may be composed of graphite or metal. If the evaporating elements are composed of a non-conducting material such as ceramic, the evaporating elements 6-10 are heated by the heat jacket 12 shown in Figures 1 to 3, which encloses the tubular casing of the evaporator 5.

管型蒸發器殼體11內設具有通孔6'之第一管型蒸發元件6。通孔6'對準氣膠輸送管4，遂使氣膠流自氣膠輸送管4進入蒸發器5後能流入第一蒸發元件6之空腔。該進入通道6'被蒸發元件6的多孔壁部包圍。蒸發元件6之孔徑大於懸浮粒子的粒度，故而懸浮粒子可被氣流送入蒸發元件6，參見圖中箭頭。懸浮粒子與蒸發元件6之孔隙之高溫表面接觸後部分蒸發。若氣膠供應過量，則亦有部分懸浮粒子儲存於蒸發元件6的孔隙內。該氣流及懸浮粒子流離開通孔6'即第一蒸發元件6之內腔後進入與第一蒸發元件6直接連接的第二蒸發元件7。三個片狀第二蒸發元件7、8、9沿流向前後佈置。第二蒸發元件7、8、9佔據管型殼體11之整個截面面積。該等第二蒸發元件相毗連且相接觸。以元件符號9標示之第二蒸發元件下游設有與第一蒸發元件6一樣同為管型蒸發元件之第三蒸發元件10。該第三蒸發元件具有與第一蒸發元件6之通孔6'對準、但被第二蒸發元件7、8、9隔開的通孔10'，此通孔構成一排出通道。第三蒸發元件10後方為一與蒸氣輸送管13連通之自由區域。 The tubular evaporator casing 11 is provided with a first tubular evaporation element 6 having a through hole 6'. The through hole 6' is aligned with the gas supply pipe 4, so that the gas gel can flow into the cavity of the first evaporation element 6 after entering the evaporator 5 from the gas supply pipe 4. This inlet channel 6' is surrounded by the porous wall of the evaporation element 6. The pore size of the evaporation element 6 is greater than the particle size of the suspended particles, so that the suspended particles can be sent to the evaporation element 6 by the gas stream, see the arrows in the figure. The suspended particles partially vaporize after coming into contact with the high temperature surface of the pores of the evaporation element 6. If the supply of the gas is excessive, a part of the suspended particles are also stored in the pores of the evaporation element 6. The gas stream and the stream of suspended particles exit the through hole 6', ie the inner cavity of the first evaporation element 6, and enter the second evaporation element 7 which is directly connected to the first evaporation element 6. The three sheet-shaped second evaporation elements 7, 8, 9 are arranged forward and backward along the flow. The second evaporation element 7, 8, 9 occupies the entire cross-sectional area of the tubular casing 11. The second evaporating elements are adjacent and in contact. A third evaporation element 10 which is the same as the first evaporation element 6 and which is a tubular evaporation element is provided downstream of the second evaporation element indicated by the reference numeral 9. The third evaporation element has a through hole 10' aligned with the through hole 6' of the first evaporation element 6, but separated by the second evaporation element 7, 8, 9, which constitutes a discharge passage. Behind the third evaporation element 10 is a free area in communication with the vapor delivery tube 13.

蒸發元件6-10係用相同材料製成且能將未蒸發之懸浮粒 子作為緩衝質量予以暫存。 Evaporating element 6-10 is made of the same material and can be used to evaporate suspended particles The child is temporarily stored as a buffer quality.

上述裝置係用於實施如下所述之本發明方法。用該有機起始材料為平放於基座19上的玻璃質基板18進行塗佈。為此，氣膠發生器3首先在富集階段產生一定質量流量之送往蒸發器5的氣膠，該質量流量大於蒸發器5內之蒸發率，以便產生含有飽和蒸氣的載氣流，再由蒸氣輸送管13送入處理室17。在以此種方式過量供應懸浮粒子之情況下，蒸發元件6-10之孔隙內形成緩衝質量。該未蒸發起始材料的緩衝質量在富集階段期間變大。 The above apparatus is used to carry out the method of the invention as described below. The organic starting material is coated with a glass substrate 18 laid flat on the susceptor 19. To this end, the gas gel generator 3 first generates a mass flow of the gas gel to the evaporator 5 in the enrichment phase, the mass flow rate being greater than the evaporation rate in the evaporator 5, in order to generate a carrier gas stream containing saturated vapor, and then The vapor delivery pipe 13 is sent to the processing chamber 17. In the case where the suspended particles are excessively supplied in this manner, the cushioning mass is formed in the pores of the evaporation members 6-10. The buffer mass of the unvaporized starting material becomes large during the enrichment phase.

富集階段之後為耗竭階段，其與富集階段之間的區別大體僅在於氣膠發生器3之產生率。氣膠發生器3在該耗竭階段期間產生一定質量流量之送往蒸發器5的懸浮粒子，該質量流量大於蒸發器5內之蒸發率(即，每單位時間所蒸發的質量)，以便產生蒸氣飽和輸出氣流。緩衝質量在耗竭階段期間變小。已蒸發有機起始材料在被送往處理室17之氣流內的蒸氣壓力仍保持不變。此氣流內持久含有飽和的已蒸發有機起始材料。該蒸氣可在基板上冷凝。但該蒸氣亦可在處理室內或在基板上發生化學反應。 The enrichment phase is followed by the depletion phase, and the difference between it and the enrichment phase is generally only the production rate of the gas gel generator 3. The gas gel generator 3 produces a mass flow of suspended particles to the evaporator 5 during the depletion phase, the mass flow being greater than the evaporation rate in the evaporator 5 (i.e., the mass evaporated per unit time) to produce a vapor Saturated output airflow. The buffer quality becomes smaller during the depletion phase. The vapor pressure of the evaporated organic starting material in the gas stream sent to the processing chamber 17 remains unchanged. This gas stream permanently contains saturated evaporated organic starting materials. The vapor can condense on the substrate. However, the vapor can also undergo a chemical reaction in the processing chamber or on the substrate.

倘若蒸發器5內部仍存在緩衝質量，便須由耗竭階段切換至富集階段。塗佈過程中可在耗竭階段與富集階段之間來回反覆切換。 If the buffer mass still exists inside the evaporator 5, it must be switched from the exhaustion phase to the enrichment phase. During the coating process, it is possible to switch back and forth between the depletion phase and the enrichment phase.

圖5至圖8為可應用於如圖1所示裝置之蒸發器5的第二 實施例。氣膠輸送管4在管型殼體11內部進一步深入數毫米並伸入第一蒸發元件6之通孔6"內。可選自由空間24將此蒸發元件6與殼體11之側壁隔開。自由空間24主要起隔熱作用。 5 to 8 are second applicable to the evaporator 5 of the apparatus shown in Fig. 1. Example. The gas-permeable transfer tube 4 is further penetrated inside the tubular housing 11 by a few millimeters and into the through-hole 6" of the first evaporation element 6. The optional free space 24 separates the evaporation element 6 from the side wall of the housing 11. The free space 24 mainly serves to insulate.

直徑較小的通孔6"與直徑大約兩倍於該通孔之第二通孔6'連接。 The through hole 6" having a smaller diameter is connected to the second through hole 6' having a diameter approximately twice that of the through hole.

蒸發元件6下游為同樣具有通孔23'的另一蒸發元件23。通孔23'對準蒸發元件6之通孔6'。 Downstream of the evaporation element 6 is another evaporation element 23 which likewise has a through hole 23'. The through hole 23' is aligned with the through hole 6' of the evaporation member 6.

蒸發元件23下游設有佔據管型殼體11之整個截面的擴散器7。擴散器7大體同樣為蒸發元件，因為擴散器7與其餘蒸發元件6、23、10、8及9皆由相同材料即前述之開孔泡沫體構成。擴散器7之厚度(即，沿流向所測得之擴散器長度)與擴散器7之孔隙開口寬度的數量級。 A diffuser 7 occupying the entire cross section of the tubular casing 11 is provided downstream of the evaporation element 23. The diffuser 7 is also generally an evaporating element because the diffuser 7 and the remaining evaporating elements 6, 23, 10, 8 and 9 are all formed of the same material, i.e. the aforementioned open cell foam. The thickness of the diffuser 7 (i.e., the length of the diffuser measured along the flow direction) is on the order of the width of the aperture opening of the diffuser 7.

蒸發元件10在擴散器7下游與之連接，該蒸發元件具有直徑與通孔6'及23'相同的第一通孔7'。此通孔7'沿流向與直徑相對較小的另一通孔7"連接。通孔7"底部封閉，因而此通孔係為一盲孔。盲孔7"的底部由一佔據管型殼體11之整個直徑的蒸發元件8構成。蒸發元件7及蒸發元件8與蒸發元件10一同形成一全面封閉的內部空腔7'、7"。 The evaporation element 10 is connected downstream of the diffuser 7, which has a first through hole 7' having the same diameter as the through holes 6' and 23'. The through hole 7' is connected in the flow direction to another through hole 7 which is relatively small in diameter. The through hole 7" is closed at the bottom, and thus the through hole is a blind hole. The bottom of the blind hole 7" consists of an evaporation element 8 occupying the entire diameter of the tubular housing 11. The evaporation element 7 and the evaporation element 8 together with the evaporation element 10 form a fully enclosed internal cavity 7', 7".

蒸發元件8與一與蒸發元件8大體採用相同設計的蒸發元件9連接。 The evaporation element 8 is connected to an evaporation element 9 which is substantially identical in design to the evaporation element 8.

上述所有蒸發元件6、23、7、10、8、9前後成一長排佈 置且相互接觸。從流向看在最後一個蒸發元件9後面設有自由空間25。該自由空間與蒸氣輸送管13連通。載氣流攜懸浮粒子經氣膠輸送管4進入通孔6'、23'。該等懸浮粒子隨氣流進入通孔6'、23'的壁部，即進入開孔蒸發元件6及23。質量相對較大、速度相對較快(即，脈衝相對較大)的懸浮粒子能一直到達蒸發元件7。該蒸發元件起擴散器作用，係用於為載氣流及其所攜之懸浮粒子制動。此等懸浮粒子到達空腔7'、7"後進入蒸發元件10及8並在此處吸熱蒸發。 All of the above evaporation elements 6, 23, 7, 10, 8, 9 are arranged in a long row Set and touch each other. From the flow direction, a free space 25 is provided behind the last evaporation element 9. This free space is in communication with the vapor delivery tube 13. The carrier gas carries the suspended particles through the gas glue delivery pipe 4 into the through holes 6', 23'. The suspended particles enter the walls of the through holes 6', 23' with the gas flow, that is, enter the opening evaporation members 6 and 23. The suspended particles of relatively large mass and relatively fast speed (i.e., relatively large pulses) can reach the evaporation element 7 all the time. The evaporating element acts as a diffuser for braking the carrier gas stream and the suspended particles it carries. These suspended particles reach the cavities 7', 7" and enter the evaporation elements 10 and 8 where they absorb heat and evaporate.

上述蒸發元件可為由玻碳或類玻璃碳構成的開孔泡沫體。該泡沫體上可塗佈金屬或陶瓷。此泡沫體亦可由玻璃或石英構成。根據一種尤佳技術方案，該泡沫體表面具有較小之光學發射率。此發射率在紅外線範圍(200℃至400℃)內較佳小於0.2。較佳以在孔壁上塗金之方式實現該較小之表面發射率。 The evaporation element may be an open cell foam composed of glassy carbon or glassy carbon. The foam may be coated with a metal or ceramic. The foam may also be composed of glass or quartz. According to a preferred embodiment, the foam surface has a small optical emissivity. This emissivity is preferably less than 0.2 in the infrared range (200 ° C to 400 ° C). Preferably, the smaller surface emissivity is achieved by gold coating the walls of the holes.

所有已揭示特徵(自身即)為發明本質所在。故本申請之揭示內容亦包含相關/所附優先權檔案(在先申請副本)所揭示之全部內容，該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項採用可選並列措辭對本發明針對先前技術之改良方案的特徵予以說明，其目的主要在於在該等請求項基礎上進行分案申請。 All the revealed features (ie, themselves) are the essence of the invention. Therefore, the disclosure of the present application also contains all the contents disclosed in the related/attached priority file (copy of the prior application), and the features described in the file are also included in the scope of the patent application of the present application. The sub-items illustrate the features of the prior art improvements of the prior art using optional side-by-side wording, the main purpose of which is to make a divisional application on the basis of the claims.

1‧‧‧載氣輸送管 1‧‧‧Carrier gas delivery tube

2‧‧‧有機起始材料容器 2‧‧‧Organic starting material container

3‧‧‧氣膠發生器 3‧‧‧ gas gel generator

4‧‧‧氣膠輸送管 4‧‧‧ gas glue pipe

5‧‧‧蒸發器 5‧‧‧Evaporator

6‧‧‧蒸發元件 6‧‧‧Evaporation components

6'‧‧‧通孔/進入通道 6'‧‧‧through hole/entry channel

6"‧‧‧通孔 6"‧‧‧through hole

7‧‧‧蒸發元件/擴散器 7‧‧‧Evaporation components/diffusers

7'‧‧‧通孔 7'‧‧‧through hole

7"‧‧‧通孔/盲孔 7"‧‧‧through/blind hole

8‧‧‧蒸發元件 8‧‧‧Evaporation components

9‧‧‧蒸發元件 9‧‧‧Evaporation components

10‧‧‧蒸發元件 10‧‧‧Evaporation components

10'‧‧‧通孔 10'‧‧‧through hole

11‧‧‧管型殼體 11‧‧‧ tubular shell

12‧‧‧加熱裝置/熱套 12‧‧‧Heating device/hot cover

13‧‧‧蒸氣輸送管 13‧‧‧Vapor delivery tube

14‧‧‧加熱裝置/熱套 14‧‧‧Heating device/hot cover

15‧‧‧反應器殼體 15‧‧‧Reactor housing

16‧‧‧氣體分佈器(蓮蓬頭) 16‧‧‧ gas distributor (leaf head)

17‧‧‧處理室 17‧‧‧Processing room

18‧‧‧基板 18‧‧‧Substrate

19‧‧‧基座 19‧‧‧ Pedestal

20‧‧‧真空泵 20‧‧‧vacuum pump

21‧‧‧電接點 21‧‧‧Electrical contacts

22‧‧‧電接點 22‧‧‧Electrical contacts

23‧‧‧蒸發元件 23‧‧‧Evaporation components

23'‧‧‧通孔 23'‧‧‧through hole

24‧‧‧自由空間 24‧‧‧Free space

25‧‧‧自由空間 25‧‧‧Free space

圖1為塗佈裝置結構圖； 圖2為沿圖1中II-II線所截取的剖面圖；圖3為沿圖1中III-III線所截取的剖面圖；圖4為第二實施例沿III線所截取的剖面圖；圖5為蒸發器第二實施例之剖面圖；圖6為沿圖5中VI-VI線所截取的剖面圖；圖7為沿圖5中VII-VII線所截取的剖面圖；及圖8為沿圖5中VIII-VIII線所截取的剖面圖。 Figure 1 is a structural view of a coating device; Figure 2 is a cross-sectional view taken along line II-II of Figure 1; Figure 3 is a cross-sectional view taken along line III-III of Figure 1; Figure 4 is a cross-sectional view taken along line III of the second embodiment; Figure 5 is a cross-sectional view of the second embodiment of the evaporator; Figure 6 is a cross-sectional view taken along line VI-VI of Figure 5; Figure 7 is a cross-sectional view taken along line VII-VII of Figure 5; It is a cross-sectional view taken along line VIII-VIII in Fig. 5.

4‧‧‧氣膠輸送管 4‧‧‧ gas glue pipe

6‧‧‧蒸發元件 6‧‧‧Evaporation components

6'‧‧‧通孔/進入通道 6'‧‧‧through hole/entry channel

6"‧‧‧通孔 6"‧‧‧through hole

7‧‧‧蒸發元件/擴散器 7‧‧‧Evaporation components/diffusers

7'‧‧‧通孔 7'‧‧‧through hole

7"‧‧‧通孔/盲孔 7"‧‧‧through/blind hole

8‧‧‧蒸發元件 8‧‧‧Evaporation components

9‧‧‧蒸發元件 9‧‧‧Evaporation components

10‧‧‧蒸發元件 10‧‧‧Evaporation components

11‧‧‧管型殼體 11‧‧‧ tubular shell

13‧‧‧蒸氣輸送管 13‧‧‧Vapor delivery tube

14‧‧‧加熱裝置/熱套 14‧‧‧Heating device/hot cover

23‧‧‧蒸發元件 23‧‧‧Evaporation components

23'‧‧‧通孔 23'‧‧‧through hole

24‧‧‧自由空間 24‧‧‧Free space

25‧‧‧自由空間 25‧‧‧Free space

Claims (13)

一種將有機起始材料成層沉積於基板(18)之方法，其中，將該有機起始材料以懸浮粒子形式送入載氣流，將由此產生的氣膠作為規定質量流量之該有機材料送往蒸發器(5)，該蒸發器(5)具有表面較大之蒸發元件(6-10)，將該蒸發元件加熱至蒸發溫度，靠近該蒸發元件(6-10)表面或與該蒸發元件(6-10)表面接觸的懸浮粒子在此蒸發溫度下蒸發，由此產生的蒸氣由該載氣流送入處理室(17)，該蒸氣在該處理室內於基板(18)表面發生冷凝並形成該層，其特徵在於，為了產生並向該處理室輸送含有已蒸發有機起始材料之飽和蒸氣的載氣流，在該沉積製程的至少一階段，特別是開始階段內，使流向該蒸發器(5)之懸浮粒子的質量流量大於該等懸浮粒子在該蒸發器(5)內之蒸發率。 A method for depositing an organic starting material in a layer on a substrate (18), wherein the organic starting material is sent to a carrier gas stream as suspended particles, and the resulting gas gel is sent to the evaporation as a predetermined mass flow of the organic material. (5), the evaporator (5) has a larger surface evaporation element (6-10), which is heated to the evaporation temperature, near the surface of the evaporation element (6-10) or with the evaporation element (6) -10) surface-contacting suspended particles are evaporated at this evaporation temperature, and the resulting vapor is sent from the carrier gas stream to a processing chamber (17) where it condenses on the surface of the substrate (18) and forms the layer. </ RTI> characterized in that, in order to generate and deliver a carrier gas stream containing saturated vapor of evaporated organic starting material to the processing chamber, flow to the evaporator is carried out in at least one stage of the deposition process, particularly in the initial stage (5) The mass flow rate of the suspended particles is greater than the evaporation rate of the suspended particles in the evaporator (5). 如申請專利範圍第1項之方法，其中，該等懸浮粒子之粒度小於該具有一開孔泡沫體之蒸發元件(6-10)的孔徑。 The method of claim 1, wherein the suspended particles have a particle size smaller than a pore size of the evaporation element (6-10) having an open cell foam. 如申請專利範圍第2項之方法，其中，交替地在該沉積製程的不同階段使流向該蒸發器(5)之有機起始材料的質量流量發生變化，亦即在富集階段，使流向該蒸發器(5)之有機起始材料的質量流量大於相同時間內蒸發該有機起始材料所產生的蒸氣質量流量，而在耗竭階段，使流向該蒸發器(5)之有機起始材料的質量流量略小於相同時間內蒸發該有機起始材料所產生的蒸氣質量流量，其中在該沉積製程實施 期間，於該富集階段期間富集於蒸發器內之有機起始材料的緩衝質量全部蒸發之前，自該耗竭階段切換至該富集階段。 The method of claim 2, wherein the mass flow rate of the organic starting material flowing to the evaporator (5) is alternately changed at different stages of the deposition process, that is, in the enrichment phase, the flow is performed The mass flow rate of the organic starting material of the evaporator (5) is greater than the mass flow rate of the vapor generated by evaporating the organic starting material in the same time, and the quality of the organic starting material flowing to the evaporator (5) during the depletion phase The flow rate is slightly less than the mass flow of vapor generated by evaporation of the organic starting material in the same time period, wherein the deposition process is carried out During this period, the depletion phase is switched to the enrichment phase before the buffer quality of the organic starting material enriched in the evaporator during the enrichment phase is completely evaporated. 如申請專利範圍第1項之方法，其中，將特定言之經預熱處理之惰性氣體特別是氮氣、氫氣或稀有氣體特別是氬氣用作該載氣。 The method of claim 1, wherein the preheated inert gas, in particular nitrogen, hydrogen or a rare gas, in particular argon, is used as the carrier gas. 如申請專利範圍第1項之方法，其中，在介於0.1 mbar與100 mbar，較佳介於0.1 mbar與10 mbar之總壓下進行該蒸發。 The method of claim 1, wherein the evaporation is carried out at a total pressure of between 0.1 mbar and 100 mbar, preferably between 0.1 mbar and 10 mbar. 如申請專利範圍第2項之方法，其中，該開孔泡沫體由類玻璃碳或玻碳構成且塗有特別是鉭、鉬、鎢、錸、鈮的金屬或特別是碳化矽或氮化硼的陶瓷，或者由特別是鉭、鉬、鎢、錸、鈮的金屬、陶瓷、玻璃或石英構成及/或視情況塗有其他金屬如金。 The method of claim 2, wherein the open-cell foam is composed of glassy carbon or glassy carbon and coated with a metal, in particular tantalum, molybdenum, tungsten, niobium or tantalum, or especially tantalum carbide or boron nitride. The ceramic is either composed of metal, ceramic, glass or quartz, in particular bismuth, molybdenum, tungsten, niobium or tantalum and/or optionally coated with other metals such as gold. 如申請專利範圍第2項之方法，其中，該泡沫體之孔隙寬度超過0.5 mm，較佳超過1 mm。 The method of claim 2, wherein the foam has a pore width of more than 0.5 mm, preferably more than 1 mm. 一種用於將有機起始材料成層沉積於基板(18)之裝置，包括氣膠發生器(3)及處理室(17)，該氣膠發生器用於產生該起始材料之一定質量流量的懸浮粒子，該等懸浮粒子由載氣流送往蒸發器(5)，其中，該蒸發器(5)具有開孔蒸發元件(6-10)，該蒸發元件包含實施為盲孔之進入通道(6')且可被加熱至蒸發溫度以蒸發該等懸浮粒子，該處理室用於容置該基板(18)，該蒸發器(5)所產生的蒸氣由蒸氣輸送管(13)送入該 處理室，其中，該蒸發元件(6-10)具有以一通孔形成該進入通道(6')之第一蒸發元件(6)及第二蒸發元件(7)，該第二蒸發元件構成該進入通道(6')之封閉末端(7')以免未蒸發懸浮粒子穿過，其特徵在於，該蒸發元件(6-10)為一開孔泡沫體，其孔隙截面面積超過1 mm2，孔隙體積至少占總體積90%。 A device for depositing an organic starting material layer on a substrate (18), comprising a gas gel generator (3) and a processing chamber (17) for generating a suspension of a certain mass flow of the starting material Particles, which are transported by a carrier gas stream to an evaporator (5), wherein the evaporator (5) has an open-cell evaporation element (6-10) comprising an inlet channel (6' implemented as a blind hole And can be heated to an evaporation temperature to evaporate the suspended particles, the processing chamber is for accommodating the substrate (18), and the vapor generated by the evaporator (5) is sent to the processing chamber by the vapor delivery tube (13) Wherein the evaporation element (6-10) has a first evaporation element (6) and a second evaporation element (7) forming the inlet passage (6') with a through hole, the second evaporation element constituting the inlet passage ( a closed end (7') of 6') to prevent passage of unvaporized suspended particles, characterized in that the evaporation element (6-10) is an open-cell foam having a pore cross-sectional area exceeding 1 mm 2 and a pore volume of at least The total volume is 90%. 如申請專利範圍第8項之裝置，其中，多個沿流向前後成一長排佈置的蒸發元件(6-10)，其中，一或多個第一蒸發元件(6)以相同直徑或不同直徑之通孔形成該進入通道，沿流向在該一或多個第一蒸發元件(6)後面設有一或多個佔據該蒸發器(5)之整個通流截面的第二蒸發元件(7，8，9)。 The apparatus of claim 8, wherein the plurality of evaporation elements (6-10) arranged in a long row are flowed forward and backward, wherein the one or more first evaporation elements (6) are of the same diameter or different diameters. The through hole forms the inlet passage, and one or more second evaporation elements (7, 8 occupying the entire flow passage section of the evaporator (5) are disposed behind the one or more first evaporation elements (6) in the flow direction. 9). 如申請專利範圍第9項之裝置，其中，具有一第三蒸發元件(10)，該第三蒸發元件構成一特定言之對準該進入通道(6')的排出通道(10')，該排出通道的封閉末端(9')由該一或多個第二蒸發元件(7，8，9)構成。 The device of claim 9, wherein there is a third evaporation element (10), the third evaporation element forming a discharge passage (10') specifically aligned with the inlet passage (6'), The closed end (9') of the discharge channel consists of the one or more second evaporation elements (7, 8, 9). 如申請專利範圍第8項之裝置，其中，該蒸氣輸送管(13)與佈置於反應器殼體(15)內之氣體分佈器(16)連通，該氣體分佈器的出氣面具有多個呈篩網狀佈置之出氣口，且該出氣面與承載該基板(18)且特定言之經冷卻處理之基座(19)相對佈置。 The apparatus of claim 8, wherein the vapor delivery tube (13) is in communication with a gas distributor (16) disposed in the reactor housing (15), the gas distributor having a plurality of gas outlet surfaces The outlet of the screen is arranged, and the outlet surface is arranged opposite the base (19) carrying the substrate (18) and in particular cooling. 如申請專利範圍第8項之裝置，其中，該蒸發器(5)具有加熱裝置(12)。 The device of claim 8, wherein the evaporator (5) has a heating device (12). 如申請專利範圍第8項之裝置，其中，該蒸發元件(6-10) 由導電材料構成，該導電材料可被流經該蒸發元件(6-10)的電流加熱。 The device of claim 8, wherein the evaporation element (6-10) It is composed of a conductive material which can be heated by the current flowing through the evaporation element (6-10).
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